WO2013094877A1 - Tête d'impression thermique et procédé pour sa fabrication - Google Patents

Tête d'impression thermique et procédé pour sa fabrication Download PDF

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Publication number
WO2013094877A1
WO2013094877A1 PCT/KR2012/009384 KR2012009384W WO2013094877A1 WO 2013094877 A1 WO2013094877 A1 WO 2013094877A1 KR 2012009384 W KR2012009384 W KR 2012009384W WO 2013094877 A1 WO2013094877 A1 WO 2013094877A1
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WO
WIPO (PCT)
Prior art keywords
electrodes
layer
common electrode
recording element
thermal recording
Prior art date
Application number
PCT/KR2012/009384
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English (en)
Korean (ko)
Inventor
홍석경
박동연
이동수
Original Assignee
지멕주식회사
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Publication date
Priority claimed from KR1020120123968A external-priority patent/KR101390153B1/ko
Application filed by 지멕주식회사 filed Critical 지멕주식회사
Publication of WO2013094877A1 publication Critical patent/WO2013094877A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/33505—Constructional details
    • B41J2/3353—Protective layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/33505—Constructional details
    • B41J2/3351—Electrode layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/33505—Constructional details
    • B41J2/33515—Heater layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/3354—Structure of thermal heads characterised by geometry
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/3355—Structure of thermal heads characterised by materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/33555—Structure of thermal heads characterised by type
    • B41J2/3357—Surface type resistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/3359—Manufacturing processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides

Definitions

  • the present invention relates to a thermal recording element and a method of manufacturing the thermal recording element. More specifically, the present invention is thermal paper or conventional printing paper The present invention relates to a thermal recording element for printing a print medium, and the like and a method of manufacturing the thermal recording element.
  • the thermal recording element may record information such as letters and figures by using a phenomenon in which the thermal recording paper is colored by thermal energy generated in the heat generating resistive film in response to an electrical signal sent from a control circuit of the printer.
  • European Patent Publication No. 2058134 discloses a hybrid thermal recording element manufactured by combining a thick film process and a thin film process.
  • FIG. 1 is a cross-sectional view of a conventional hybrid thermal recording element disclosed in the European Patent Publication
  • FIG. 2 is an enlarged plan view of a heat generating resistor of the conventional thermal recording element of FIG.
  • a conventional hybrid thermosensitive recording device includes an insulating substrate 1, a partial glaze layer 2, a plurality of individual electrodes 3A and 3B, an insulating layer pattern 4, and heat generation.
  • the resistive film 5 and the protective layer 6 are provided.
  • a common electrode (not shown) is connected to one side of the individual electrodes 3A and 3B.
  • the plurality of individual electrodes 3A and 3B are typically formed on the insulating substrate 1 and the partial glaze layer 2 using a thick film wiring forming method including a photolithography process. Is formed. That is, a paste of a metal such as gold (Au) is applied onto the insulating substrate 1 and the partial glaze layer 2 through a screen printing process, and then patterned by using a photolithography process. Individual electrodes 3A, 3B are formed. Thereafter, the insulating substrate 1 on which the individual electrodes 3A and 3B are formed at a temperature between the transition temperature of the glaze and the softening temperature is held for a predetermined time, so as to separate the individual electrodes 3A. End portions 31A and 31B of 3B are embedded in the partial glaze layer 2 by their own weight.
  • a paste of a metal such as gold (Au) is applied onto the insulating substrate 1 and the partial glaze layer 2 through a screen printing process, and then patterned by using a photolithography process.
  • the protective layer 6 covering the heat generating resistive film 5 has a generally flat upper surface on the heat generating resistive portion 5a. Therefore, when information is printed on the thermal paper using a conventional thermal recording element, the adhesion between the thermal paper contacting the heat generating resistor portion 5a and the protective layer 6 is improved, thereby reducing the energy required for printing and It is possible to increase the feed rate.
  • the common electrode is placed on one side of the individual electrodes 3A and 3B through a thick film screen printing process using a paste of a metal such as silver (Ag) to reduce the resistance of the common wiring of the thermal recording element.
  • a paste of a metal such as silver (Ag) to reduce the resistance of the common wiring of the thermal recording element.
  • the pattern is dried and sintered to form the common electrode.
  • the heat generating resistor portion 5a of the heat generating resistive film 5 generates heat and cools at a high speed in response to the on / off operation of the driving circuit.
  • the insulating layer pattern 4 is formed in the heat generating resistor portion 5a of the heat generating resistive film 5 in order to suppress cracking due to thermal shock in the glaze layer 2 of the glass component.
  • the insulating layer may be sputtered on the entire surface of the insulating substrate 1 on which the individual electrodes 3A and 3B and the common electrode are formed.
  • the heat generating resisting portion 5a is formed on the insulating layer pattern 4 using a photolithography process. To form.
  • the conventional hybrid thermal recording element described above has advantages such as improved corrosion resistance of the individual electrodes 3A and 3B, improved adhesion between the protective layer 6 and the thermal paper, and the like.
  • an additional photolithography process is required to form the insulating layer pattern 4 between the heat generating resistor portion 5a and the glaze layer 2, and the insulating layer pattern 4 Has a disadvantage in that the glaze layer 2 below is etched during the etching process of forming a).
  • the width of the heat generating resistive film 5 is narrower than the width of the insulating layer pattern 4 and the individual electrodes 3A and 3B, so that the area where heat is generated is narrowed, so that the printing dots ( A problem may occur that the size of the dot) becomes small, and there is a disadvantage in that the factor energy must be increased to compensate for this. Furthermore, there is a problem in that the manufacturing process is complicated because a process for forming the individual electrodes 3A and 3B and a process for forming the common electrode must be performed separately in order to manufacture a conventional hybrid thermal recording element.
  • An object of the present invention is to provide a thermal recording element capable of high speed and high precision printing while reducing printing energy, and ensuring improved durability and reliability.
  • Another object of the present invention is to provide a method for manufacturing a thermal recording element which can simplify the manufacturing process and reduce the cost by arranging an insulating film and forming electrode wirings simultaneously in a self-aligning manner.
  • a thermal recording element a substrate, a glaze layer disposed on the substrate, an insulating film disposed on the glaze layer, the insulating film and A plurality of first electrodes and a plurality of second electrodes embedded in the glaze layer, respectively, disposed on the insulating layer between the first electrodes and the second electrodes, and disposed on the first and second electrodes, respectively.
  • Each of the plurality of resistive film patterns connected to each other may include a protective layer covering the first electrodes, the resistive film patterns, and the second electrodes.
  • the thermal recording element may be embedded in the insulating layer and the glaze layer, and may further include a common electrode that is substantially integrally formed with the first electrodes.
  • First and second recesses may be disposed in the insulating layer and the glaze layer, the first electrodes and the common electrode may be disposed in the first recess, and the second electrodes may be disposed in the first recess. It can be placed in two recesses.
  • the insulating layer may have a thickness of about 0.05 ⁇ m to about 0.2 ⁇ m, and each of the first and second recesses may have a thickness of about 0.5 ⁇ m to about 10 ⁇ m.
  • the first electrodes, the common electrode, and the second electrodes may each include gold, silver, copper, an alloy containing gold, an alloy containing silver, an alloy containing copper, and the like.
  • a plurality of protrusions may be disposed in the first recess, each of the glaze layer and a portion of the insulating layer, and the common electrode may include a plurality of protrusions substantially corresponding to the protrusions. May comprise openings.
  • each of the resistive layer patterns may have a width substantially greater than that of the first electrodes and the second electrodes.
  • the insulating layer may include a metal oxide or a silicon compound.
  • the resistive layer patterns may be ruthenium (Ru) -metal (M) -oxygen (O), iridium (Ir) -metal (M) -oxygen (O), platinum (Pt) -metal (M) -oxygen ( O), tantalum (Ta)-silicon (Si)-oxygen (O), chromium (Cr)-silicon (Si)-oxygen (O) or niobium (Nb)-silicon (Si)-oxygen (O) It may be composed of a binary compound including a ternary compound or tantalum (Ta) -nitrogen (N) or ruthenium (Ru) -oxygen (O).
  • an insulating film is formed on the glaze layer Can be.
  • the insulating layer and the glaze layer may be partially etched to form first recesses having a plurality of protrusions and a plurality of second recesses.
  • a conductive layer may be formed on the insulating layer by filling the first recess and the second recess, and then the conductive layer on the insulating layer may be removed to form a plurality of first electrodes and a common electrode in the first recess.
  • the plurality of second electrodes may be formed in the second recesses.
  • a plurality of resistive layer patterns may be formed on the insulating layer to be connected to the first electrodes and the second electrodes, respectively.
  • a protective layer may be formed on the insulating layer, the first electrodes, the common electrode, the second electrodes, and the resistive layer patterns.
  • a plurality of protrusions each of the glaze layer and a portion of the insulating layer may be formed in the first recess, and the plurality of openings may be formed in the common electrode according to the protrusions.
  • the conductive paste may be filled on the insulating layer and filled with the first recess and the second recess, and then the conductive paste may be dried and sintered. have.
  • the first electrodes, the common electrode and the second electrodes may be formed using a chemical mechanical polishing process.
  • a resistance of the insulating layer pattern through a photolithography process which is a problem of the conventional hybrid thermal recording element manufacturing process, may be omitted, and the resistance may be simply maintained by a self alignment method. Since the insulating film and the electrode wirings can be formed under the film patterns, the width of the resistive film patterns can be increased to improve the printing energy efficiency, durability, reliability, and the like of the thermal recording element. In addition, by simultaneously forming the plurality of first and second electrodes and the common electrode, the manufacturing process of the thermal recording element can be simplified and the manufacturing cost can be reduced.
  • 1 is a cross-sectional view of a conventional hybrid thermal recording element.
  • FIG. 2 is an enlarged plan view of a heat generating resistor of the conventional thermal recording element of FIG. 1.
  • FIG. 3 is a plan view illustrating a thermal recording element according to exemplary embodiments of the present invention.
  • FIG. 4 is a cross-sectional view of the thermal recording element taken along the line II of FIG. 3.
  • 5 to 16 are cross-sectional views and plan views illustrating a method of manufacturing a thermal recording element according to exemplary embodiments of the present invention.
  • FIG. 17 is a plan view showing a thermal recording element according to other exemplary embodiments of the present invention.
  • FIG. 18 is a cross-sectional view taken along the line XII-XIII of FIG. 17.
  • FIG. 19 is an enlarged plan view of a portion “XIV” of FIG. 17.
  • thermal recording element and the method of manufacturing the thermal recording element according to exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
  • present invention is not limited to the following embodiments. Those skilled in the art may implement the present invention in various other forms without departing from the technical spirit of the present invention.
  • first and second may be used to describe various components, but such components are not limited by the terms. The terms are used to distinguish one component from another component.
  • first component may be called a second component, and similarly, the second component may be alternatively named.
  • FIG. 3 is a plan view illustrating a thermosensitive recording element according to exemplary embodiments of the present invention
  • FIG. 4 is a cross-sectional view of the thermosensitive recording element illustrated in FIG. 3.
  • the thermal recording element 100 may include a substrate 110, a glaze layer 115, an insulating film 120, a plurality of first electrodes 125, A plurality of second electrodes 130, a plurality of resistive film patterns 135, a protective layer 140, and a common electrode 145 may be provided.
  • the first electrodes 125, the second electrodes 130, the resistive layer patterns 135, and the like on the center of the substrate 110 are not shown for convenience.
  • the substrate 110 may be made of an insulating material.
  • the substrate 110 may be made of aluminum oxide (AlOx).
  • the glaze layer 115 is disposed on the substrate 110.
  • the glaze layer 115 may have a substantially uniform thickness on the entire surface of the substrate 100.
  • the glaze layer 115 may be composed of a mixture including silicon oxide (SiOx), aluminum oxide (AlOx), barium oxide (BaOx), calcium oxide (CaOx), and the like as a main component, such as glass.
  • the glaze layer 115 may be formed by applying a paste of silicon oxide, aluminum oxide, barium oxide, and calcium oxide in a predetermined ratio onto the substrate 100, and then applying the paste.
  • the oxide paste may be formed by performing a drying process, a sintering process, or the like.
  • the insulating film 120 is disposed on the glaze layer 115.
  • the insulating layer 120 may be formed of a material having a relatively high hardness and a relatively high thermal conductivity as compared with the material of the glaze layer 115.
  • the insulating layer 120 may include a metal oxide or a silicon compound such as aluminum oxide (AlOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), or the like.
  • the insulating layer 120 may have a relatively small thickness of about 0.05 ⁇ m to about 0.2 ⁇ m from the upper surface of the glaze layer 115.
  • the insulating layer 120 may be formed of the first electrodes 125, the second electrodes 130, and the common electrode 145 on the glaze layer 115 using a chemical mechanical polishing (CMP) process. ) May serve as a polishing stop layer to protect the glaze layer 115 having a relatively low hardness.
  • CMP chemical mechanical polishing
  • the insulating layer 120 generates / cools at a high speed in response to the ON / OFF operation signal of the resistive pattern 135 of the thermal recording element 100 of a driving circuit (not shown).
  • the glaze layer 115 having a relatively low thermal conductivity may function as a thermal stress buffer layer that prevents a phenomenon in which a crack is generated due to thermal shock.
  • the first electrodes 125, the second electrodes 130, and the common electrode 145 may be substantially buried in the insulating layer 120 and the glaze layer 115.
  • the first electrodes 125, the second electrodes 130, and the common electrode 145 each contain gold (Au), silver (Ag), copper (Cu), and gold. Alloys, alloys containing silver, alloys containing copper and the like.
  • the common electrode 145 may be substantially disposed on the periphery of the glaze layer 115, and the first electrodes 125 and the second electrodes 130 may be disposed on the common electrode 145. It may be located on the center portion of the glaze layer 115 of the area defined by (). That is, the second electrodes 130 may be substantially surrounded by the common electrode 145 and the first electrodes 125.
  • the common electrode 145 may have a structure in which both side portions are bent from the center portion.
  • the common electrode 145 may have a planar shape such as a shape of a substantially inverted "U" or a shape of a substantially rotated "c".
  • the plurality of first electrodes 125 may be spaced apart from each other at first intervals, and may extend from the central portion of the common electrode 145 onto the glaze layer 115. In this case, the first electrodes 125 may be integrally formed with the common electrode 145.
  • Both sides of the common electrode 145 and one side of the plurality of second electrodes 130 may be electrically connected to the driving circuit of the thermal recording element 100, respectively.
  • the plurality of second electrodes 130 may be disposed to substantially correspond to the plurality of first electrodes 125, respectively.
  • Each resistive film pattern 135 is disposed between the first electrode 125 and the second electrode 130 to cover an end portion of each first electrode 125 and an end portion of each second electrode 130 spaced at a predetermined interval. It may have a length substantially longer than the interval of. Accordingly, the resistive layer patterns 135 may be in contact with the first and second electrodes 125 and 130, respectively.
  • each resistive film pattern 135 may be disposed on each first electrode 125, and the other side of each resistive film pattern 135 is positioned on one side of each second electrode 130. can do.
  • each of the resistive film patterns 135 may have a width substantially larger than the width of each first electrode 125 and / or the width of one side of each second electrode 130.
  • the first recess 150 and the second recess 155 may pass through the insulating layer 120 on the glaze layer 115.
  • the first electrode 125 and the common electrode 145 may fill the first recess 150, and the second electrode 130 may be buried in the second recess 155.
  • the first recess 150 and the second recess 155 may have a relatively deep depth.
  • the first and second recesses 150 and 155 may each have a depth of about 0.5 ⁇ m to about 10.0 ⁇ m from the top surface of the insulating layer 120.
  • the first electrodes 125, the second electrodes 130, and the common electrode 145 have a thick thickness that is substantially the same as or substantially similar to the depth of the first and second recesses 150 and 155, respectively. It can have for example, the first electrodes 125, the second electrodes 130, and the common electrode 145 may each have a thickness of about 0.5 ⁇ m to about 10.0 ⁇ m.
  • the first electrodes 125, the second electrodes 130, and the common electrode 145 having the above-described structures may include the glaze layer 115 and the insulating layer 120 having the first and second recesses 150 and 155.
  • the conductive paste may be formed by coating a conductive paste on the substrate, performing a drying process and a sintering process, and then removing the conductive paste located on the insulating layer 120.
  • the resistive layer patterns 135 may extend from the insulating layer 120 onto one sides of the first electrodes 125 and the second electrodes 130, respectively. That is, the center portion of each resistive layer pattern 135 may be positioned on the insulating layer 120, and both side portions of each resistive layer pattern 135 may have one side of each of the first electrode 125 and the second electrode 130. It can be placed on.
  • the center portion of each of the resistive film patterns 135 on the insulating film 120 may correspond to the heat generating resistor portion of the thermal recording element 100.
  • each of the resistive layer patterns 135 may be formed of a ternary compound.
  • each resist layer pattern 135 includes ruthenium (Ru)-metal (M)-oxygen (O), iridium (Ir)-metal (M)-oxygen (O), and platinum (Pt)-metal (M It may be made of a ternary compound including) -oxygen (O) and the like.
  • the metal (M) may include silicon (Si), tantalum (Ta), titanium (Ti), or the like.
  • each resist layer pattern 135 may include tantalum (Ta) -silicon (Si) -oxygen (O), chromium (Cr) -silicon (Si) -oxygen (O), and niobium (Nb). It may be made of a tertiary compound such as) -silicon (Si) -oxygen (O) and the like.
  • the resistive layer patterns 135 may be formed of two-component compounds, respectively.
  • each of the resistive film patterns 135 may include tantalum (Ta) -nitrogen (N), ruthenium (Ru) -oxygen (O), or the like.
  • a resistive film positioned between each of the first and second electrodes 125 and 130 selected by the driving circuit of the thermal recording element 100.
  • the pattern 135 generates heat, and heat is generated by the heat, or the ink of the ink ribbon is melted or sublimed and transferred to a print medium, thereby printing.
  • the insulating film 120 is interposed between the resistive film patterns 135 and the glaze layer 115, the resistive film patterns 135 do not directly contact the glaze layer 115. Accordingly, thermal damage to the glaze layer 115 may be prevented due to the resistive layer patterns 135 while the thermal recording element 100 is operating, thereby improving durability, reliability, and the like of the thermal recording element 100.
  • the thermal recording element 100 may be used to print on the print medium. During printing, the size of the printing dot is increased to enable clear printing with less printing energy.
  • the protective layer 140 may include the resistive layer patterns 135, the first electrodes 125, a part of the common electrode 145, and a part of the second electrodes 130. It is disposed on the insulating film 120 while covering. For example, the other sides of the second electrodes 130 and both sides of the common electrode 140 may be exposed by the protective layer 140.
  • the protective layer 140 not only prevents the resistive patterns 135, the common electrode 145, the first electrodes 125, and the second electrodes 130 from directly contacting the thermal paper or a conventional printing paper.
  • the common electrode 145, the first electrodes 125, and the second electrodes may serve to protect against damage such as scratches generated during corrosion or electrochemical corrosion.
  • the protective layer 140 may have a relatively smooth surface to reduce the friction with the thermal paper or the ink ribbon when printing using the thermal recording element 100 to enable smooth printing.
  • the protective layer 140 may be formed of a silicon compound, a metal compound, or the like.
  • the protective layer 140 may include silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), silicon carbide (SiCx), silicon-aluminum oxynitride (SiAlxOyNz), tantalum oxide (TaOx), Titanium nitride (TiNx) and the like.
  • the protective layer 140 may have a relatively thick thickness of about 3.0 ⁇ m to about 7.0 ⁇ m.
  • the protective layer 140 may be a single layer structure or a multilayer structure made of the above-described silicon compound and / or metal compound, depending on characteristics required for the thermal recording element 100 such as oxidation resistance, wear resistance, antistatic, and the like. It may have a structure.
  • 5 to 16 are cross-sectional views and plan views illustrating a method of manufacturing a thermal recording element according to exemplary embodiments of the present invention.
  • 5 to 16 exemplarily illustrate a method of manufacturing a thermal recording element having a configuration substantially the same as that of the thermal recording element described with reference to FIGS. 3 and 4, the self-evident name of the mask pattern for forming the recesses is illustrated.
  • the thermal recording element illustrated in Figs. 17 to 19 can also be manufactured as described later.
  • FIG. 5 is a cross-sectional view for describing processes of forming the glaze layer 205 and the insulating layer 210 on the substrate 200.
  • the glaze layer 205 is formed on the substrate 200.
  • the substrate 200 may be formed using an insulating material such as a metal oxide.
  • the substrate 200 may be formed using aluminum oxide.
  • the glaze layer 205 may be formed to have a substantially uniform thickness on the entire surface of the substrate 200.
  • the glaze layer 205 may be formed using silicon oxide, aluminum oxide, barium oxide, calcium oxide, or the like.
  • the oxide paste may be uniformly applied onto the substrate 200 to provide a substrate ( It is possible to form an oxide layer on the surface 200) having a smooth surface, such as glass.
  • a paste in which silicon oxide, aluminum oxide, barium oxide, and calcium oxide oxide is mixed may be applied onto the substrate 200 using a printing process, a spin coating process, or the like. After drying the oxide layer, the oxide layer may be sintered at a predetermined temperature to form a glaze layer 205 on the substrate 200.
  • the insulating film 210 is formed on the glaze layer 205.
  • the insulating layer 210 may be formed using a material having a relatively high hardness and a relatively high thermal conductivity compared to the material of the glaze layer 205.
  • the insulating layer 210 may be formed using a silicon compound, a metal oxide, or the like.
  • the insulating layer 210 may be formed using silicon oxynitride (SiOxNy), silicon oxycarbide (SiOxCy), aluminum oxide (AlOx), or the like.
  • the insulating layer 210 may be formed using a chemical vapor deposition process, an atomic layer deposition process, a plasma enhanced chemical vapor deposition process, a sputtering process, a vacuum deposition process, or the like.
  • the insulating layer 210 may be formed with a relatively small thickness of about 0.05 ⁇ m to about 0.2 ⁇ m from the upper surface of the glaze layer 205.
  • FIG. 6 is a plan view illustrating a process of forming the first recess 220 and the second recess 225 in the glaze layer 205 and the insulating layer 210
  • FIG. 7 is a line III-IV of FIG. 6. The cross section is cut along the side.
  • a first mask pattern 215 is formed on the insulating layer 210.
  • the first mask pattern 215 may be formed using a material having an etch selectivity with respect to the insulating layer 210 and the glaze layer 205, such as a photoresist. For example, after forming a photoresist film (not shown) on the insulating film 210, an exposure process and a developing process may be performed on the photoresist film to form a first mask pattern 215.
  • the first mask pattern 215 may expose the insulating layer 210 of portions where the first and second recesses 220 and 225 are subsequently formed.
  • the first and second recesses 220 and 225 may have a relatively large depth of about 0.5 ⁇ m to about 10.0 ⁇ m from the top surface of the insulating layer 210, respectively.
  • the first recess 220 may be formed in the glaze layer 205 on the periphery of the substrate 200, and the second recess 225 may be formed in the first recess 220. It can be formed in the glaze layer 205 on the central portion of the substrate 200 defined by.
  • the first recess 220 may have a structure substantially surrounding the second recess 225.
  • the first recess 220 may have a structure in which both sides thereof are bent and extended from the center portion.
  • the first recess 220 may have a planar shape such as a substantially reverse shape of a “U” shape or a substantially rotated “c” shape. In this case, a plurality of first electrodes 235 (see FIG.
  • each of the protrusions of the first recess 220 may protrude toward the center portion of the substrate 200, and may be spaced apart at predetermined intervals through the insulating layer 210.
  • the protrusions of the first recess 220 may each have a predetermined width.
  • the second recesses 225 may have one sides corresponding to the protrusions of the first recess 220, respectively. One side of the plurality of second recesses 225 may be spaced apart from each other at substantially the same or substantially similar intervals between the protrusions of the first recess 220.
  • FIG. 8 is a cross-sectional view for describing a process of forming the conductive layer 230 on the glaze layer 205 and the insulating layer 210.
  • the first mask pattern 215 on the insulating layer 210 is removed.
  • the first mask pattern 215 may be removed from the insulating film 210 through an ashing process and / or a stripping process. have.
  • the conductive layer 230 is formed on the insulating layer 210 while substantially filling the first and second recesses 220 and 225.
  • a conductive paste (not shown) may be formed on the insulating layer 210 while filling the first and second recesses 220 and 225.
  • the conductive paste may be formed using gold, silver, copper, an alloy containing gold, an alloy containing silver, an alloy containing copper, and the like.
  • the conductive paste may be provided on the insulating layer 210 using a printing process, a spin coating process, or the like.
  • the conductive paste 230 may be formed on the insulating layer 210 by performing a drying process or a sintering process on the conductive paste.
  • the conductive layer 230 may extend onto the insulating layer 210 while substantially filling the first and second recesses 220 and 225.
  • FIG. 9 is a plan view illustrating a process of forming the first electrodes 235, the common electrode 240, and the second electrodes 245, and FIG. 10 is a cross-sectional view taken along the line V-VI of FIG. 9. .
  • the conductive layer 230 is partially removed to form the plurality of first electrodes 235, the common electrode 240, and the plurality of second electrodes 245. That is, the conductive layers 230 on the insulating layer 210 are removed to form the first electrodes 235, the common electrode 240, and the second electrodes 245.
  • Each of the first electrodes 235 may be formed in the protrusions of the first recess 220, and the common electrode 240 may fill the center and both sides of the first recess 220.
  • the second electrodes 245 may fill the second recesses 225, respectively. Accordingly, each first electrode 235 may have a dimension substantially the same as or substantially similar to that of the protrusion of the first recess 220.
  • Each second electrode 245 may also be formed with substantially the same or substantially similar dimensions as each second recess 225. Accordingly, the first electrodes 235, the second electrodes 245, and the common electrode 240 may each have a thickness of about 0.5 ⁇ m to about 10.0 ⁇ m from the top surface of the insulating layer 210.
  • the first electrodes 235, the common electrode 240, and the second electrodes 245 may be formed using a chemical mechanical polishing (CMP) process.
  • CMP chemical mechanical polishing
  • the conductive layers 230 are polished until the insulating layer 210 is exposed, so that the first electrodes 235 and the common electrodes 240 are buried in the first recesses 220 and the second recesses 225.
  • second electrodes 245 may be formed.
  • the insulating film 210 may serve as a polishing stopper film of the chemical mechanical polishing process.
  • the insulating film 210 is a material having a relatively low hardness during the chemical mechanical polishing process of forming the first electrodes 235, the common electrode 240, and the second electrodes 245 on the glaze layer 205. It is possible to protect the glaze layer 205 made of. Therefore, the top surfaces of the first electrodes 235, the common electrode 240, and the second electrodes 245 and the top surface of the insulating layer 210 may be positioned on substantially the same plane.
  • the manufacturing process of the thermal recording element is greatly simplified. You can.
  • the relatively low hardness when the insulating layer 210 removes the unnecessary conductive layer 230 positioned on the insulating layer 210 in addition to the conductive layer 230 filling the first and second recesses 220 and 225.
  • the glaze layer 205 having the structure may prevent the polishing damage from occurring, and the phenomenon in which the difference in the degree of polishing of the conductive layer 230 depending on the position of the substrate 200 may be suppressed.
  • the insulating layer 210 may be formed on the glaze layer 205 of the remaining portions except for the portions in which the first and second electrodes 235 and 245 and the common electrode 240 are formed. Because it is located at, the insulating layer 210 may be disposed under a self alignment method under the resistive pattern 255 (see FIG. 16) without an additional etching process.
  • first and second electrodes 235 and 245 and the common electrode 240 may also be formed in the first and second recesses 220 and 225, respectively, in a self-aligned manner with respect to the insulating layer 210. .
  • the insulating layer 210 and the glaze layer 205 are partially etched to form first and second recesses 220 and 225, and the first and second recesses 220 and 225 are formed in the first and second recesses 220 and 225. Since the first and second electrodes 235 and 245 and the common electrode 240 are formed in the second and second electrodes 235 and 245 and the common electrode 240, the first and second recesses may be formed in a self-aligned manner. 220, 225 may be disposed.
  • FIG. 11 is a cross-sectional view for describing a process of forming the resistive film 250.
  • a resistive film 250 is formed on the first electrodes 235, the common electrode 240, the second electrodes 245, and the insulating film 210.
  • the resistive film 250 includes ruthenium (Ru)-metal (M)-oxygen (O), iridium (Ir)-metal (M)-oxygen (O), platinum (Pt)-metal (M)-oxygen (O) It may be formed using a ternary compound including the like.
  • the metal may include silicon (Si), tantalum (Ta), titanium (Ti), or the like.
  • the resistive film 250 may include ruthenium-silicon oxide (Ru-SiOx), ruthenium-tantalum oxide (Ru-TaOx), ruthenium-titanium oxide (Ru-TiOx), iridium-silicon oxide (Ir-SiOx), Iridium-tantalum oxide (Ir-TaOx), iridium-titanium oxide (Ir-TiOx), platinum-silicon oxide (Pt-SiOx), platinum-tantalum oxide (Pt-TaOx), platinum-titanium oxide (Pt-TiOx), etc. It can be formed using.
  • the resistive film 250 may include tantalum-silicon oxide (Ta-SiOx), chromium-silicon oxide (Cr-SiOx), niobium-silicon oxide (Nb-SiOx), and tantalum nitride (TiNx). , Ruthenium oxide (RuOx) and the like can be formed.
  • the resistive film 250 may be formed using a sputtering process, a printing process, a chemical vapor deposition process, a vacuum deposition process, or the like. According to exemplary embodiments, when the resistive film 250 is formed of the tri-component compound, the resistance value of the resistive film 250 may be adjusted by changing the content ratio of the metal and the oxide in the resistive film 250. In addition, when the resistive film 250 includes an oxide, oxidation resistance of the resistive film 250 may also be improved.
  • the resistive film 250 may be formed to a relatively thin thickness. For example, the resistive film 250 may have a thickness of about 0.05 ⁇ m to about 0.2 ⁇ m from an upper surface of the insulating film 210.
  • FIG. 12 is a plan view illustrating a process of forming the resistive film pattern 255
  • FIG. 13 is a cross-sectional view taken along the line VII-VIII of FIG. 12
  • FIG. 14 is an enlarged plan view of the portion “IX” of FIG. 12. to be.
  • a second mask pattern (not shown) such as a photoresist pattern or a hard mask pattern is formed on the resistive layer 250, and then the second mask pattern is used as an etching mask.
  • the resistive film patterns 255 may be formed on portions of the insulating film 210 between the first electrodes 235 and the second electrodes 245.
  • each of the resistive film patterns 255 may have a length substantially greater than a distance between each of the first and second electrodes 235 and 245. have. Accordingly, both side portions of each of the resistive film patterns 255 may be connected to one side of the first electrode 235 and the second electrode 245. That is, both sides of the resistive layer patterns 245 may substantially overlap one sides of the first electrodes 235 and the second electrodes 245, respectively.
  • the insulating layer 210 may be positioned below the center portion corresponding to the heat generating resistor portion 260 of each resistive layer pattern 255.
  • the resistive layer patterns 255 may have a substantially larger width than the widths of the first and second electrodes 235 and 245, respectively.
  • FIG. 15 is a plan view illustrating a process of forming the protective layer 265, and FIG. 16 is a cross-sectional view taken along the line X-XI of FIG. 15.
  • a protective layer 265 is formed on the insulating film 210 to cover the first electrodes 235, the second electrodes 245, and the common electrode 240.
  • the protective layer 265 may prevent the resist pattern 255 from directly contacting a print medium such as thermal paper, an ink ribbon, or a conventional printing paper, and may be in common with the first and second electrodes 235 and 245.
  • the electrode 240 may be prevented from being electrochemically corroded or physically damaged.
  • the protective layer 265 may reduce the friction with the print media to facilitate the printing.
  • the protective layer 265 may be formed using a silicon compound, a metal compound, or the like.
  • the protective layer 265 may be formed using silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon-aluminum oxynitride, tantalum oxide, titanium nitride, or the like.
  • the protective layer 265 may be formed to a relatively thick thickness.
  • the protective layer 265 may have a thickness of about 3.0 ⁇ m to about 7.0 ⁇ m from the upper surface of the resistive layer pattern 255.
  • the protective layer 265 may be formed using a sputtering process, a printing process, a chemical vapor deposition process, a spin coating process, or the like.
  • the first electrodes 235 and the resistive layer patterns 255 may be completely covered by the passivation layer 265, and the common electrode 240 and the second electrodes 245 may be provided.
  • the insulating layer 210 may be partially exposed by the protective layer 265. For example, both ends of the common electrode 240 and the other sides of the second electrodes 245 and the insulating layer 210 adjacent thereto may be exposed after the protective layer 265 is formed.
  • the thermal recording element is manufactured by electrically connecting a driving circuit to the other sides of the second electrodes 245 and both sides of the common electrode 240 using a bonding process such as wire bonding.
  • FIG. 17 is a plan view illustrating a thermal recording element according to another exemplary embodiment of the present invention
  • FIG. 18 is a cross-sectional view taken along the line XII-XIII of FIG. 17, and
  • FIG. 19 is an enlarged “XIV” portion of FIG. 17.
  • the thermal recording element 300 may include a substrate 305, a glaze layer 310, an insulating film 315, a plurality of first electrodes 335, and a plurality of second electrodes ( 345, a common electrode 340, a plurality of protrusions 350, resistance layer patterns (not shown), a protective layer (not shown), and the like.
  • the thermal recording element 100 described with reference to FIGS. 3 and 4 is described. It may have a configuration substantially the same as or substantially similar to.
  • a plurality of openings 320 exposing the plurality of protrusions 350 are formed in the common electrode 340.
  • Each of the plurality of protrusions 350 may include an insulating layer 315 and a portion of the glaze layer 310, and may include electrode wirings including first electrodes 335, a common electrode 340, and second electrodes 345. As described later, the dishing phenomenon can be prevented from occurring.
  • the protrusions 350 may each have a variety of planar shapes, such as a substantially square shape, a substantially rectangular shape, a substantially ellipse shape, a substantially circle shape, and the like.
  • the protrusions 350 and the common electrode 340 having such structures may change the shape of a mask pattern for forming the first and second recesses 325 and 330 in the insulating layer 315 and the glaze layer 310.
  • the insulating layer 315 may have predetermined regions corresponding to the plurality of protrusions 350.
  • the first recess 325 and the second recesses 330 may be formed by partially etching the insulating layer 315 and the glaze layer 310 using the mask pattern.
  • a plurality of protrusions 350 including the glaze layer 310 and the insulating layer 315 may be formed in the first recess 325 substantially corresponding to the regions of the mask pattern.
  • the protrusions 350 may be provided by remaining of the insulating layer 315 and the glaze layer 310 in the first recess 325. Forming a conductive layer (not shown) on the insulating film 315 while filling the first and second recesses 325 and 330, and removing the conductive layer on the insulating film 315 using a chemical mechanical polishing process. First electrodes 335, protrusions 350, common electrode 340, and second electrodes 345 may be formed in the first and second recesses 325 and 330. Since the conductive layer on the protrusions 350 in the first recess 325 is also removed, a plurality of openings 320 exposing the protrusions 350 may be formed in the common electrode 340. have. For example, the openings 320 may have substantially the same dimensions and shapes as the protrusions 350, and may be arranged at substantially uniform intervals at the center and both sides of the common electrode 340.
  • the first electrode 335, the common electrode 340, and the second electrodes 345 may be formed to fill the insulating layer 315 and the glaze layer 310.
  • the conductive layer is filled in the recesses 325 and the second recesses 330 and the chemical mechanical polishing process is performed, the surfaces of the conductive layers filled in the first and second recesses 325 and 330 are smoothly polished. Therefore, the center and both sides of the common electrode 340 are compared with the first electrodes 335 and the second electrodes 345. Deeper polishing may result in dishing. This dishing phenomenon is more likely to occur in the common electrode 340 formed in the first recess 325 having a relatively wide width.
  • a plurality of protrusions 350 having a predetermined shape and area are formed in the first recess 325 to form the widths of the central portion and both sides of the common electrode 340.
  • the width between the portions of the common electrode 340 having the opening 320 along the protrusions 350 may be substantially equal to the width of each first electrode 335 or the width of each second electrode 345. May be identical or substantially similar.
  • adjacent openings 320 may be formed by forming openings 320 exposing the projections 350 in the common electrode 340 having a relatively wide width, typically about 1.0 mm to about 3.0 mm.
  • the width of each portion of the common electrode 340 in between may be reduced to about 50 ⁇ m to about 300 ⁇ m. Since the common electrode 340 having the openings 320 has a flat surface without dishing when the conductive layer is polished by a chemical mechanical process, the electrical characteristics of the thermal recording element 300 may be improved.
  • the resistive layer patterns and the protective layer may be more easily formed thereon.
  • the protrusions 350 and the openings 320 are illustrated as having substantially rectangular planar shapes, respectively, but the protrusions 350 and the openings 320 are substantially square in shape. It may have a variety of planar shapes, such as a substantially oval shape, a substantially circular shape, a substantially rhombus shape, and the like.
  • the resistive film pattern 135 since the resistive film pattern 135 has a relatively thin thickness, the resistive film pattern 135 may have a relatively small heat capacity as compared with a conventional thick film resistive film. Accordingly, the heat generating portion of the resistive film pattern 135 which is energized by the driving circuit generates heat, and the temperature may be rapidly increased to a temperature suitable for printing. On the other hand, even when the current is stopped by the driving circuit, the temperature of the resistive film pattern 135 can be lowered quickly. As described above, since the heat generating response and the cooling response of the resistive film pattern 1350 are high, even if the ON / OFF energization speed made by the driving circuit is switched at a high speed, the printed dots are tailed. The possibility of producing defects such as drag and white streaks is reduced, and high speed and high precision printing can be performed.
  • the resistive film pattern 135 is a thin film having a substantially thin thickness, unlike the case where the resistive film is a thick film as in the conventional thermal recording element, the heat generating portion of the resistive film pattern 135 protrudes upward. It does not have a shape. Accordingly, when printing using the thermal recording element 100 according to the exemplary embodiments, the protective layer 140 covering the resistive film pattern 135 is not pressed against the printing medium such as thermal paper or ink ribbon with excessive force. This prevents phenomena such as unstable transfer of the thermal paper, occurrence of unwanted noise, sticking of the thermal paper, and the like, which are commonly generated in the thick film type thermal recording element.
  • the protective layer 140 covering the resistive layer pattern 135 is made of a material having a smooth surface and a relatively low coefficient of friction, the protective layer 140 reduces friction between the protective layer 140 and the printing medium, thereby reducing the friction between the printing medium and the printing medium. Sticking phenomenon of can be suppressed.
  • the insulating film 120 which can serve as a thermal stress relaxation layer, is disposed between the heat-generating portion of the resistive film pattern 135 and the glaze layer 115 in a self-aligned manner, a conventional hybrid thermal recording element.
  • the resistive layer pattern 135 may have a width greater than the width of the first electrode 125 and / or the width of the second electrode 130. As a result, the size of the printing dot increases at the time of printing, thereby enabling clear printing even with less printing energy.
  • the first and second electrodes 125 and 130 and the common electrode 145 are embedded in the glaze layer 115 and the insulating layer 120, the first and second electrodes 125 and 130 and the common electrode 145 are common to the first and second electrodes 125 and 130. Even after the electrode 145 is formed, the substrate 110 may have a relatively flat upper surface as a whole. Therefore, the upper surface of the protective layer 140 covering the heat generating portion of the resistive film pattern 135 may have a shape that protrudes substantially convexly, unlike the protective layer of the conventional thin film type thermal recording element. The adhesion between the positioned protective layer 104 and the thermal paper or ink ribbon is greatly improved to enable faster printing with less printing energy.
  • the plurality of first and second electrodes 125 and 130 and the common electrode 145 are thick films containing substantially gold, silver or copper, excellent corrosion resistance compared to aluminum-based electrodes of conventional thin film type thermal recording elements. Can have Thus, even if the thermal recording element 100 according to the exemplary embodiments is exposed to an environment that is susceptible to electrochemical corrosion for a long time, the first and second electrodes 125 and 130 and the common electrode 145 may be corroded. The likelihood of the printing quality is deteriorated or the printing operation becomes unstable due to poor contact or disconnection of the wirings including the first and second electrodes 125 and 130 and the common electrode 145. It is possible to prevent and improve the durability and reliability of the thermal printer having the thermal recording element 100 installed.
  • the thermal recording element according to the exemplary embodiments of the present invention may have greatly improved characteristics as compared with the conventional thermal recording element as described above, the thermal recording element may be applied to a device such as a thermal printer or the like. Various characteristics such as electrical characteristics, durability, reliability can be improved. In addition, since the thermal recording element according to the exemplary embodiments of the present invention can be manufactured at a low cost through simplified processes, it is possible to reduce the manufacturing cost, management cost, etc. of the apparatus having such a thermal recording element. .

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Abstract

L'invention porte sur une tête d'impression thermique, laquelle tête comprend : un substrat ; une couche de glaçage qui est disposée sur le substrat ; un film isolant qui est disposé sur la couche de glaçage ; une pluralité de premières électrodes et une pluralité de secondes électrodes qui sont enfouies dans le film isolant et la couche de glaçage, une pluralité de motifs de film résistant qui sont chacun disposés sur le film isolant entre les premières et secondes électrodes et qui sont chacun connectés aux premières et secondes électrodes ; et une couche protectrice qui recouvre les premières électrodes, les motifs de film résistant et les secondes électrodes. Comme le film isolant et les fils d'électrode peuvent être disposés au-dessous des motifs de film résistant d'une manière auto-alignée, la largeur des motifs de film résistant peut être accrue pour un plus grand rendement d'énergie d'impression, pour une plus grande durée de vie et pour une plus grande fiabilité de la tête d'impression thermique. Les premières et secondes électrodes et des électrodes communes peuvent être formées en même temps, de façon à fabriquer la tête d'impression thermique à l'aide d'un procédé simplifié et à des coûts de fabrication réduits.
PCT/KR2012/009384 2011-12-22 2012-11-08 Tête d'impression thermique et procédé pour sa fabrication WO2013094877A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0139839 2011-12-22
KR20110139839 2011-12-22
KR10-2012-0123968 2012-11-05
KR1020120123968A KR101390153B1 (ko) 2011-12-22 2012-11-05 감열 기록 소자 및 감열 기록 소자의 제조 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113386470A (zh) * 2020-03-11 2021-09-14 深圳市博思得科技发展有限公司 热敏打印头及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05270029A (ja) * 1992-03-26 1993-10-19 Fuji Xerox Co Ltd サーマルヘッド
JPH05345435A (ja) * 1992-06-15 1993-12-27 Fuji Xerox Co Ltd サーマルヘッドの製造方法
JPH06135034A (ja) * 1992-10-23 1994-05-17 Fuji Xerox Co Ltd サーマルヘッドの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05270029A (ja) * 1992-03-26 1993-10-19 Fuji Xerox Co Ltd サーマルヘッド
JPH05345435A (ja) * 1992-06-15 1993-12-27 Fuji Xerox Co Ltd サーマルヘッドの製造方法
JPH06135034A (ja) * 1992-10-23 1994-05-17 Fuji Xerox Co Ltd サーマルヘッドの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113386470A (zh) * 2020-03-11 2021-09-14 深圳市博思得科技发展有限公司 热敏打印头及其制造方法

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