WO2013038130A1 - Procédé de fabrication de graphène - Google Patents

Procédé de fabrication de graphène Download PDF

Info

Publication number
WO2013038130A1
WO2013038130A1 PCT/GB2012/000719 GB2012000719W WO2013038130A1 WO 2013038130 A1 WO2013038130 A1 WO 2013038130A1 GB 2012000719 W GB2012000719 W GB 2012000719W WO 2013038130 A1 WO2013038130 A1 WO 2013038130A1
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
diamond
catalyst
layer
iron
Prior art date
Application number
PCT/GB2012/000719
Other languages
English (en)
Inventor
David Andrew EVANS
Original Assignee
Aberystwyth University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aberystwyth University filed Critical Aberystwyth University
Priority to GB1404539.7A priority Critical patent/GB2511434A/en
Publication of WO2013038130A1 publication Critical patent/WO2013038130A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
    • B01J21/18—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/745—Iron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/75—Cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/08—Heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • B01J35/30—

Definitions

  • the present application relates to compositions comprising graphene and methods for producing graphene.
  • Graphene is formed of single atomic planes of carbon with a structure similar to a single plane of graphite.
  • Graphene's unique electronic, spintronic and optical properties has made it the focus of much attention since first demonstrated in material exfoliated from crystalline graphite (Novoselov, 2004).
  • the combination of hig electrical conduction, optical transparency and spin transport properties makes it attractive for many , applications from photovoltaic cells to spin valves.
  • High quality graphene can be produced on a variety of substrates, and this has facilitated the observation of fundamentally new phenomena (Bostwick, 2010; Lizzit ei al, 2010).
  • the most widely used substrates are single crystal metals such as rhodium and iridium (Wintterlin, 2009).
  • Wintterlin, 2009 the most widely used substrates are single crystal metals such as rhodium and iridium.
  • they are fundamentally problematic for devices that make use of the surface transport properties due to charge transport through the conductive substrates (Hofmann & Wells, 2009).
  • Carbon, 49, 1006- 1012, (201 1 ). relates to the production of multilayer graphene gron by precipitation upon cooling of nickel on diamond.
  • the document discloses that multilayer graphene is grown by precipitation upon cooling of a thin nickel film deposited by e-beam evaporation on single crystal diamond (001 ) orientated substrates.
  • the authors claim that a nickel layer on (00 I ) diamond extracts carbon at high temperatures and releases it only when cooled to room temperature. In addition, the authors were not able to determine the onset temperature.
  • high quality graphene can be grown and there is no evidence for the crystallinity of the graphene or the nickel (no diffraction or photoelectron methods).
  • the disclosure does not disclose the steps needed in order to control the formation of one, two or more layers of graphene. Furthermore, there is no disclosure of measurement of the orientation of the graphene planes to the diamond surface.
  • a method for producing graphene comprising:-
  • the formation of graphene on the exposed surface of the catalyst is monitored and tlie heat source is removed when a desired thickness of graphene has been produced.
  • the formation of graphene ou the exposed surface of the catalyst is monitored in situ.
  • the formation of graphene on the exposed surface of the catalyst can be monitored in situ using techniques involving the use of light (including, for example, lasers and infrared), x-rays, electrons, ions photoeleclrons and scanned probes.
  • light including, for example, lasers and infrared
  • x-rays including, for example, lasers and infrared
  • electrons including, for example, ions photoeleclrons and scanned probes.
  • tlie formation of graphene on the exposed surface of the catalyst is monitored in situ using one or more of x-ray, optical or electron based techniques.
  • the formation of graphene on the exposed surface of the catalyst is monitored in situ by one or more of X-ray Photoelectron Spectroscopy (XPS), REal-time Electron Spectroscopy (REES), Low Energy Electron Diffraction (LEED), Scanning Tunneling Microscopy (STM) and Angle-Resolved Photo-Electron Spectroscopy (ARPES).
  • XPS X-ray Photoelectron Spectroscopy
  • REES REal-time Electron Spectroscopy
  • LEED Low Energy Electron Diffraction
  • STM Scanning Tunneling Microscopy
  • ARPES Angle-Resolved Photo-Electron Spectroscopy
  • the diamond and/or catalyst layer is heated for a period of time which has been calculated to produce a defined thickness of graphene, preferably based upon calibration experiments.
  • a period of time which has been calculated to produce a defined thickness of graphene, preferably based upon calibration experiments.
  • the catalyst is a transition metal catalayst.
  • the catalyst is selected from iron, cobalt and nickel. Further preferably, the catalyst is selected from iron and cobalt. Most preferably, the catalyst is iron.
  • the catalyst is provided at a thickness of at least about one monolayer, preferably at least about Inm, preferably between about I nm and about 15nm, preferably between about Inm and about 5 nra, preferably between about ! nm and about 3 nm.
  • the layer of catalyst can be deposited on the diamond surface at a temperature as high as the reaction temperature.
  • the catalyst can be deposited at a temperature of between about -200°C and about 700°C.
  • the layer of catalyst is deposited on the diamond surface at a temperature of between about 10°C and about 30 C C, preferably between about 15°C and about 25°C, most preferably at about 2 TC.
  • the layer of catalyst is deposited on the diamond surface in a vacuum.
  • the diamond and/or catalyst layer is heated at a graphitisation temperature at which the formation of graphene occurs, preferably at a temperature of between about 500°C and about 750°C, preferably between about 600°C and about 700°C, preferably at least about 675°C.
  • the diamond and/or catalyst layer is heated at a graphitization temperature until a desired thickness of graphene is formed on the exposed surface of the catalyst.
  • the diamond and/or catalyst layer is heated at a graphitization temperature for between about 500s and about 900s, preferably between about 600s and about 800s, preferably between about 700s and about 800s, preferably about 750s.
  • the diamond and/or catalyst layer is heated to a graphitization temperature by increasing the temperature at a rate which allows the formation of graphene on the exposed surface of the catalyst to be monitored in sifu.
  • the diamond and/or catalyst layer is heated to a graphitization temperature by increasing the temperature at a rate of between about 0.5°C s "1 and about 10 °C s " '. preferably, between about 1°C s '1 and about 5 °C s '1 , for example between about 1°C s '1 and about 2 °C s ' ' .
  • the, heat source is removed and the diamond/catalyst graphene layer sample is allowed to cool, preferably to a temperature as low as about 30°C, preferably to as low as about 20°C.
  • the diamond and/ r catalyst layer is heated in a vacuum environment.
  • the desired thickness of graphene is one layer of graphene.
  • the desired thickness of graphene may be multiple layers of graphene, for example at least about 2, 3, 4, 5, 6, 7, 8, 9. 10 or more layers of graphene.
  • a layer of graphene produced by a method as described herein.
  • Another aspect of the present invention relates to a diamond having a (1 1 1) suz-face, wherein the (111) surface is provided with a layer of catalyst for catalysing the formation of a layer of graphene thereon.
  • the catalyst is a transition metal catalyst.
  • the catalyst is selected from iron, cobalt and nickel. Further preferably, the catalyst is selected from iron and cobalt. Most preferably, the catalyst is iron.
  • the catalyst is provided at a thickness of at least about one monolayer, preferably at least about lnm, preferably between about Inm and about I Snm, preferably between about lnm and about 5nm, preferably between about l nm and about 3nm, most preferably about 2nm.
  • a further aspect of the invention relates to a composition comprising graphene, metal and diamond wherein the metal is provided on a (1 1 1 ) surface of the diamond.
  • the metal is provided between the graphene and the diamond.
  • the metal is a transition metal preferably selected from iron, cobalt and nickel. More pi eferabiy, the metal metal is selected from iron and cobalt. Most preferably, the metal is iron.
  • the metal is provided at a thickness of at least about one monolayer, preferably at least about I nm, preferably between about inm and about 15nm, preferably between about I m and about 5nm, preferably between about I nm and about 3nm, most preferably about 2nm.
  • a further aspect of the invention relates to a composition comprising graphene, iron and diamond.
  • the iron is provided between the graphene and the diamond.
  • the iron is provided on a (1 1 1 ) surface of the diamond.
  • the iron is provided at a thickness of at least about one monolayer, preferably at least about I nm. preferably between about Inm and about 15nm, preferably between about Inm and about Snm, preferably between about Inm and about 3nm, most preferably about 2nm.
  • FIG. 1 shows (a) Schematic representation oi : the atomic structure for SiC + Fe before annealing (the Fe layer is shown as a bcc lattice), (b) SiC + Fe following annealing. The reaction products are FeSi x (shown as FeSi in the figure) and graphene.
  • Figure 3 shows schematics of devices using a conipcsiton of the invention comprising a semiconductor-metal-graphene structure using the efficient electron conduction through the structure.
  • the semiconductor (C) is a carbon-containing crystal
  • the metal (B) is a transition metal catalyst
  • the top graphene layer (A) obtains its carbon atoms from the semiconductor using the process of the invention.
  • pannel (a) an optoelectronic device is shown where light (thick arrow) penetrates through the transparent layers to the carbon-containing semiconductor where it is absorbed and turned into charges (electrons, holes, excitons) (thin arrows) that are transported efficiently through the structure to be collected at the graphene and at the semiconductor.
  • pannel (b) a switch transistor is shown where charge (diin arrows) is injected effeciveiy into the graphene channel by the first deviscture, transmitted / modulated by the graphene channel and collected by the second structure.
  • Figure 4 shows, in the left pannel a side-view schematic of a composition of the invention produced by the method of the invention.
  • the diamond (bottom) is matched to the iron (middle) and graphene (top).
  • experimentally-measured diffraction patterns arc shown for each component in the structure. Remarkably, these show that the top- view hexagonal atomic structures are the same size and the same orientation for each layer in the composition.
  • the invention relates to methods for producing graphene.
  • the methods used in the invention and delailed examples of the invention are set out below.
  • the term ''about means plus or minus 20%, more preferably plus or minus 10%, even more preferably plus or minus 5%, most preferably plus or minus 2%.
  • the term "graphitization temperature” means a temperature at which graphene is formed on the exposed surface of the catalyst layer.
  • the exact temperature, or temperature range, may depend upon the reaction condition parameters but can be determined by a skilled person through in situ monitoring of the exposed surface of the - catalyst or via calibration experiments performed utilizing the same reaction condition parameters.
  • the graphitization temperature may be between about 500°C and about 750°C, preferably between about 60T C and about 700 o C, preferably at least about 675°C.
  • the "exposed surface of the catalyst” means the surface of the catalyst which is not in contact with the diamond surface.
  • a diamond (1 1 1 ) surface means that specific crystallographic plane that is defined according to convention by the indices 1 , 1 and 1. This surface can be prepared by cleaving and/or polishing followed by chemical cleaning. It is also possible to anneal the surface in a vacuum and to expose the surface to gases. High quality surfaces of different leremtiiatioii can be prepared in these ways.
  • Graphene is formed from single atomic planes of carbon with a structure similar to a single plane of graphite. However, it has material properties that are very different from graphite. For example, it is transparent and an excellent conductor of electrons.
  • One of the main technological challenges is to economically produce large area graphene of high structural quality. Current methods include exfoliation from graphite, growth from gases on metal crystals and decomposition of carbon containing solids such as fullerenes and silicon carbide.
  • the present invention provides a new method based on the conversion of carbon atoms in a diamond (1 11) surface to graphene.
  • the present invention relates to the growth of graphene on diamond using a transition metal catalyst, For example, epitaxial graphene on diamond (1 11 ) surfaces using Fe, Co or Ni.
  • the methods described herein provide for epitaxial graphene fabrication on diamond (1 1 1 ) surfaces using iron.
  • the procedure is provided in detail below.
  • An iron thin film is grown in vacuum on the diamond surface and this is then controHably heated until a chemical reaction is initiated at a known temperature.
  • This reaction removes carbon from the diamond, transports it through the iron and deposits it as a high quality graphene layer on top of the iron.
  • the growth may be stopped when there is one layer of carbon on the surface, but can be continued to grow further graphene layers as desired.
  • the process can be controlled to give single or many layers of graphene.
  • the work described herein provides the temperature for initiation of this reaction and the thickness of the iron film/layer. It also proves that the graphene is of high structural quality, that it lies on the surface of the iron and that it is made up of non-diamond, sp2-bonded carbon.
  • the catalytic conversion of sp3 carbon to sp2 carbon on a diamond (11 1) surface using a transition metal (Fe) catalyst has been developed to provide a controlled, reduced temperature method for graphene growth.
  • the approach is to fabricate metal and graphene films on the oriented crystalline substrate in a clean vacuum environment with programmable temperature cycling.
  • XPS X-ray Photoelectron Spectroscopy
  • REES REal-time Electron Spectroscopy
  • snapshot mode typically 4 s
  • LED Low Energy Electron Diffraction
  • STM Scanning Tunneling Microscopy
  • PEEM Photoelectron Microscopy
  • ARPES Angle-Resolved Photo-Electron Spectroscopy
  • the two sets of symmetry-equivalent first order beams from diamond (1 1 1 ) displayed maxima (Fig. 1(b) and (c) respectively) whereas LEED measurements of the same surface after graphitization and under similar conditions (Fig. 1(e) and (f)) revealed no such maxima, but a very similar in-piane unit cell, and the same in-plane orientation. This proves mat the surface carbon layer was indeed graphitic.
  • the Fe does not form an intermediate product on diamond as illustrated in Figures 2(c) and (d).
  • the Fe catalyses the conversion from s -' to sp 2 carbon, depositing the latter as a graphene/graphite film on top of the Fe layer.
  • the excellent epitaxial match between all three components in this structure offers the potential for very high quality and large area graphene production at industrially realistic temperatures.
  • the use of the present invention to produce graphene of controlled, thickness opens up a wealth of new possibilities; to make use of graphene's electrical conductivity in patterned tracks on such surfaces using lithographic metallic patterns, and to facilitate, for example, the construction of new two-element spin devices which exploit graphene's spin transport, Fe's spin injection and diamond's spin storage properties.
  • the reduced temperature growth of graphene-on-semiconductor structures afforded by this solid-state method brings many of the proposed uses of graphene into the reach of industrial processing.
  • composition according to the invention examples are:
  • a switch / transistor where the semiconductor and metal element selects the electrons that are then transported widtout loss along the graphene.
  • the electrons can be selected and modulated to carry information and are then collected at a second semiconductor-metal- graphene structure.
  • a device for conversion of energy from light vo electricity (optimised at the UV and x-ray part of the spectrum by the band-gap of the diamond). This could be a sensor, a light detector or a photovoltaic cell.
  • Light meaning electromagnetic radiation of visible, ultraviolet and x-ray wavelengths
  • compositions of the invention wherein metal is provided on different diamond surfaces Comparison between compositions of the invention wherein metal is provided on different diamond surfaces.
  • Table 1 summarises differences between compositions according to the invention wherein iron is provided on the the (11 1) diamond surface or the (001 ) diamond surface.
  • the diamond surface is treated with an iron layer and heated to form a layer of graphene/graphiie.
  • Bostwick A. el al. Physical Review Letters 103, (2009). Bostwick, A. et al , Science 328, 99-] 002 (20) 0).

Abstract

L'invention concerne un procédé de fabrication de graphène qui comprend : (i) la disposition d'une couche de catalyseur sur une surface d'un diamant (111), (ii) le chauffage du diamant et/ou de la couche de catalyseur avec une source de chaleur jusqu'à l'obtention d'une épaisseur souhaitée de graphène sur la surface exposée du catalyseur.
PCT/GB2012/000719 2011-09-14 2012-09-14 Procédé de fabrication de graphène WO2013038130A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1404539.7A GB2511434A (en) 2011-09-14 2012-09-14 Method for producing graphene

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1115865.6A GB201115865D0 (en) 2011-09-14 2011-09-14 Method for producing graphene
GB1115865.6 2011-09-14

Publications (1)

Publication Number Publication Date
WO2013038130A1 true WO2013038130A1 (fr) 2013-03-21

Family

ID=44908546

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2012/000719 WO2013038130A1 (fr) 2011-09-14 2012-09-14 Procédé de fabrication de graphène

Country Status (2)

Country Link
GB (2) GB201115865D0 (fr)
WO (1) WO2013038130A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016216288A (ja) * 2015-05-19 2016-12-22 国立大学法人九州工業大学 グラフェン層積層ダイヤモンド基板の製造方法
CN107190246A (zh) * 2017-05-05 2017-09-22 太原理工大学 一种具有优良场发射性能的石墨烯/金刚石复合膜及其制备方法
CN111994904A (zh) * 2020-09-15 2020-11-27 河南工业大学 一种金刚石表面制备石墨烯的方法
CN114959699A (zh) * 2022-08-02 2022-08-30 中国科学院宁波材料技术与工程研究所 一种低摩擦的金属/超纳米金刚石复合涂层及其制备方法
CN116960187A (zh) * 2023-09-21 2023-10-27 深圳市港祥辉电子有限公司 一种n型金刚石横向mosfet器件及其制备工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090297854A1 (en) * 2008-05-29 2009-12-03 Jae-Kap Lee Aa stacked graphene-diamond hybrid material by high temperature treatment of diamond and the fabrication method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090297854A1 (en) * 2008-05-29 2009-12-03 Jae-Kap Lee Aa stacked graphene-diamond hybrid material by high temperature treatment of diamond and the fabrication method thereof

Non-Patent Citations (14)

* Cited by examiner, † Cited by third party
Title
BOSTWICK A., PHYSICAL REVIEW LETTERS, 2009, pages 103
BOSTWICK, A., SCIENCE, vol. 328, 2010, pages 99 - 1002
CARBON, vol. 49, 2011, pages 1006 - 1012
DIMITRAKOPOULOS, C., JOURNAL OF VACUUM SCIENCEAND TECHNOLOGY B, vol. 28, 2010, pages 985 - 992
FYFE, DJ., PHD THESIS, 2001
GARCIA J M ET AL: "Multilayer graphene grown by precipitation upon cooling of nickel on diamond", CARBON, ELSEVIER, OXFORD, GB, vol. 49, no. 3, 1 March 2011 (2011-03-01), pages 1006 - 1012, XP027561982, ISSN: 0008-6223, [retrieved on 20101215] *
GEIM, A.K., SCIENCE, vol. 324, 2009, pages 1530 - 1534
HOFMANN, P.; WELLS, J.W., JOURNAL OF PHYSICS: CONDENSED MATTER, vol. 21, 2009, pages 013003
LIZZIT, S. ET AL., NATURE PHYSICS, vol. 6, 2010, pages 345 - 348
NOVOSELOV, K.S. ET AL., SCIENCE, vol. 306, 2004, pages 666 - 669
SMIRNOV W ET AL: "Anisotropic etching of diamond by molten Ni particles", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 97, no. 7, 19 August 2010 (2010-08-19), pages 73117 - 73117, XP012138852, ISSN: 0003-6951, DOI: 10.1063/1.3480602 *
SP COOIL ET AL: "graphene growth on metallised diamond surfaces", PROCEEDING OF AWAY DAY, 9 May 2011 (2011-05-09), pages 5 - 7, XP055052699, Retrieved from the Internet <URL:http://www.bangor.ac.uk/eng/Documents/Proceedings CAFMaD Away Day_May2011.pdf#page=8> [retrieved on 20130207] *
TOMBROS, N.; JOZSA, C.; POPINCIUC, M.; JONKMAN, H.T.; VAN WEES, B.J., NUTURE, vol. 448, 2007, pages 571 - 574
WINTTERLIN, J; BOCQUET, M.-L, SURFACE SCIENCE, vol. 603, 2009, pages 1841 - 1852

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016216288A (ja) * 2015-05-19 2016-12-22 国立大学法人九州工業大学 グラフェン層積層ダイヤモンド基板の製造方法
CN107190246A (zh) * 2017-05-05 2017-09-22 太原理工大学 一种具有优良场发射性能的石墨烯/金刚石复合膜及其制备方法
CN111994904A (zh) * 2020-09-15 2020-11-27 河南工业大学 一种金刚石表面制备石墨烯的方法
CN114959699A (zh) * 2022-08-02 2022-08-30 中国科学院宁波材料技术与工程研究所 一种低摩擦的金属/超纳米金刚石复合涂层及其制备方法
CN116960187A (zh) * 2023-09-21 2023-10-27 深圳市港祥辉电子有限公司 一种n型金刚石横向mosfet器件及其制备工艺

Also Published As

Publication number Publication date
GB201115865D0 (en) 2011-10-26
GB201404539D0 (en) 2014-04-30
GB2511434A (en) 2014-09-03

Similar Documents

Publication Publication Date Title
Sun et al. Synthesis of wafer‐scale graphene with chemical vapor deposition for electronic device applications
Hofmann et al. CVD-enabled graphene manufacture and technology
Hu et al. Epitaxial growth of large-area single-layer graphene over Cu (1 1 1)/sapphire by atmospheric pressure CVD
Mohsin et al. Synthesis of millimeter-size hexagon-shaped graphene single crystals on resolidified copper
Xu et al. Production of extended single-layer graphene
Rasool et al. Atomic-scale characterization of graphene grown on copper (100) single crystals
Liu et al. High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer graphene
Li et al. Architecture of graphdiyne nanoscale films
Yang et al. Chemical vapour deposition of graphene: Layer control, the transfer process, characterisation, and related applications
Cooil et al. Iron-mediated growth of epitaxial graphene on SiC and diamond
Sarau et al. Efficient nitrogen doping of single-layer graphene accompanied by negligible defect generation for integration into hybrid semiconductor heterostructures
TW201509796A (zh) 具有非常高電荷載子遷移率之石墨烯及其製備方法
WO2013038130A1 (fr) Procédé de fabrication de graphène
Romanyuk et al. Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy
Xue et al. High-temperature in situ investigation of chemical vapor deposition to reveal growth mechanisms of monolayer molybdenum disulfide
Chen et al. Thermal degradation of monolayer MoS2 on SrTiO3 supports
Kapitanova et al. Laterally selective oxidation of large-scale graphene with atomic oxygen
Roth et al. Some like it flat: Decoupled h-BN monolayer substrates for aligned graphene growth
Ago CVD growth of high-quality single-layer graphene
Han et al. Large-area layer-by-layer controlled and fully bernal stacked synthesis of graphene
Ludwiczak et al. Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
Liu et al. Huge absorption edge blue shifts of layered α-MoO3 crystals upon thickness reduction approaching 2D nanosheets
Prezhdo Graphene—the ultimate surface material
Kathalingam et al. Poly (methyl methacrylate)-derived graphene films on different substrates using rapid thermal process: A way to control the film properties through the substrate and polymer layer thickness
Han et al. High-quality graphene synthesis on amorphous SiC through a rapid thermal treatment

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12775273

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 1404539

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20120914

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1404539.7

Country of ref document: GB

122 Ep: pct application non-entry in european phase

Ref document number: 12775273

Country of ref document: EP

Kind code of ref document: A1