WO2013031900A1 - 配線欠陥検出方法および配線欠陥検出装置、並びに半導体基板の製造方法 - Google Patents
配線欠陥検出方法および配線欠陥検出装置、並びに半導体基板の製造方法 Download PDFInfo
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- WO2013031900A1 WO2013031900A1 PCT/JP2012/072021 JP2012072021W WO2013031900A1 WO 2013031900 A1 WO2013031900 A1 WO 2013031900A1 JP 2012072021 W JP2012072021 W JP 2012072021W WO 2013031900 A1 WO2013031900 A1 WO 2013031900A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/07—Non contact-making probes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2805—Bare printed circuit boards
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a wiring defect detection method, a wiring defect detection device, and a semiconductor substrate manufacturing method suitable for detecting defects in wiring formed on a semiconductor substrate such as a liquid crystal panel and a solar battery panel.
- a manufacturing process of a liquid crystal panel is roughly divided into an array (TFT) process, a cell (liquid crystal) process, and a module process.
- TFT array
- cell liquid crystal
- module process array detection is performed after a gate electrode, a semiconductor film, a source / drain electrode, a protective film, and a transparent electrode are formed on a transparent substrate. Presence or absence is detected.
- a voltage is applied to the leaky defect substrate to generate heat, and the defect position is specified using an image obtained by imaging the surface temperature of the leaky defect substrate with an infrared camera. There is infrared detection.
- Patent Document 1 relates to infrared detection for detecting a short-circuit defect of a substrate by an infrared image. By using a difference image of the infrared image of the substrate before and after applying a voltage, a heated wire is detected, and the defect position is detected. Can be identified.
- Patent Document 2 discloses a failure diagnosis method using an infrared camera.
- Japanese Patent Publication Japanese Patent Laid-Open No. 06-207914 (Publication Date: July 26, 1994)”
- Japanese Patent Publication Japanese Patent Laid-Open No. 04-348266 (Publication Date: December 3, 1992)”
- Patent Documents 1 and 2 when the techniques of Patent Documents 1 and 2 are used, in the case of a low heat generation defect in which a sufficient temperature change cannot be obtained, a defective portion (a wiring portion that generates heat) and a background portion (a wiring portion that does not generate heat) and a substrate Even if the difference images of the infrared images in the portion other than the upper wiring portion are compared, there is a possibility that a clear contrast difference does not occur. In this case, when the difference image is binarized, the defective portion and the background portion cannot be sufficiently separated, and it is difficult to specify the defective portion.
- the present invention has been made in view of the above-described problems, and its purpose is to set a threshold value for a time (number of frames) until a heat generation of a semiconductor substrate (leak defect substrate) and a temperature rise value. It is an object of the present invention to provide a method and apparatus capable of detecting a defective portion on a substrate with high accuracy regardless of the heat generation amount (infrared image intensity) of the portion, and a substrate manufacturing method.
- the wiring defect detection method is: A voltage application step of applying a predetermined voltage to the wiring formed on the semiconductor substrate; A measuring step of continuously measuring a temperature of at least a part of the region of the semiconductor substrate to which a voltage is applied in the voltage applying step using an infrared camera; A determination step of determining whether a temperature rise value derived by subtracting the temperature value of the semiconductor substrate before applying the voltage from the temperature value measured in the measurement step is equal to or greater than a threshold value; If it is determined in the determination step that the threshold is greater than or equal to the threshold, it is determined that the wiring formed in the region has a short-circuit defect, and if it is determined that the wiring is less than the threshold, the wiring has a short-circuit defect.
- a defect determination step for determining that there is no It is characterized by including.
- the defect since the defect has a low heat generation, the temperature change is insufficient, and it is difficult to determine whether or not the defect is detected by the defect detection method using the difference image of the infrared image.
- a defect can be detected with high accuracy by making a determination using numerical data such as a temperature rise value without using an infrared image that relies on visual observation. In other words, it is possible to detect a defect due to a short circuit on the semiconductor substrate with high accuracy regardless of the heat generation amount of the defect (intensity of the infrared image).
- the wiring defect detection apparatus which concerns on this invention, Voltage applying means for applying a predetermined voltage to the wiring formed on the semiconductor substrate; An infrared camera for measuring the temperature of the semiconductor substrate; Measuring means for the infrared camera to continuously measure the temperature of the semiconductor substrate for a certain period of time; Determining whether a temperature rise value is derived by subtracting the temperature value of the semiconductor substrate before applying the voltage from the temperature value obtained by the measuring means, and determining whether the derived temperature rise value is equal to or greater than a threshold value Means, Defect determining means that determines that the wiring has a short-circuit defect when the determination means determines that the threshold is equal to or greater than the threshold, and determines that the short-circuit defect does not exist when the wiring is determined to be less than the threshold. And The measurement unit, the determination unit, and the defect determination unit are provided in a control unit.
- the defect since the defect has a low heat generation, the temperature change is insufficient, and it is difficult to determine whether or not the defect is detected by the defect detection method using the difference image of the infrared image.
- a defect can be detected with high accuracy by making a determination using numerical data such as a temperature rise value without using an infrared image that relies on visual observation.
- the defect can be detected with high accuracy regardless of the heat generation amount of the defective portion (intensity of the infrared image).
- a method for manufacturing a semiconductor substrate includes: Forming a semiconductor substrate on which at least one of a gate electrode, a source electrode, and a drain electrode, a wiring connected to the gate electrode, a wiring connected thereto, and a semiconductor film are formed on the substrate; , A voltage application step of applying a predetermined voltage to the wiring formed on the semiconductor substrate; A measuring step of continuously measuring a temperature of at least a part of the region of the semiconductor substrate to which a voltage is applied in the voltage applying step using an infrared camera; A determination step of determining whether a temperature rise value derived by subtracting the temperature value of the semiconductor substrate before applying the voltage from the temperature value measured in the measurement step is equal to or greater than a threshold value; If it is determined in the determination step that the threshold is greater than or equal to the threshold, it is determined that the wiring formed in the region has a short-circuit defect, and if it is determined that the wiring is less than the threshold, the wiring has a short-circuit defect.
- the wiring defect detection method and the wiring defect detection apparatus determine whether the defect is low in heat generation due to low heat generation, and is a defect in the defect detection method using the difference image of the infrared image. Even if it is difficult to determine whether or not a defect is detected, it is possible to detect defects on the substrate with high accuracy by using numerical data such as temperature rise values without using infrared images that rely on visual inspection. can do. In other words, the defective portion on the semiconductor substrate can be detected with high accuracy regardless of the amount of heat generated by the defective portion (intensity of the infrared image).
- FIG. 1 is a block diagram illustrating a configuration of a wiring defect detection device according to an embodiment of the present invention, and a perspective view illustrating a configuration of a mother substrate having a liquid crystal panel. It is a perspective view which shows the structure of the wiring defect detection apparatus which concerns on embodiment of this invention. It is a top view of the liquid crystal panel and probe which concern on embodiment of this invention. It is a flowchart which shows the wiring defect detection method which concerns on embodiment of this invention. It is a schematic diagram which shows the defect of the pixel part which concerns on embodiment of this invention. It is the schematic of the method of producing the background image at the time of calculating the temperature rise threshold value concerning embodiment of this invention. It is a graph which shows the temperature change curve of the defect part which concerns on embodiment of this invention. It is a graph which shows the temperature change curve of the background part which concerns on embodiment of this invention. It is a schematic diagram which shows the short circuit path
- FIG. 1A is a block diagram showing the configuration of the wiring defect detection device 100 in the present embodiment
- FIG. 2 is a perspective view of a mother substrate 1 (semiconductor substrate) that is a target for which a wiring defect is detected.
- FIG. 1A is a block diagram showing the configuration of the wiring defect detection device 100 in the present embodiment
- FIG. 2 is a perspective view of a mother substrate 1 (semiconductor substrate) that is a target for which a wiring defect is detected.
- FIG. 1A is a block diagram showing the configuration of the wiring defect detection device 100 in the present embodiment
- FIG. 2 is a perspective view of a mother substrate 1 (semiconductor substrate) that is a target for which a wiring defect is detected.
- FIG. 1A is a block diagram showing the configuration of the wiring defect detection device 100 in the present embodiment
- FIG. 2 is a perspective view of a mother substrate 1 (semiconductor substrate) that is a target for which a wiring defect is detected.
- the wiring defect detection apparatus 100 can detect defects such as wiring in a plurality of liquid crystal panels 2 (semiconductor substrates) formed on the mother substrate 1 shown in FIG. Therefore, the wiring defect detection apparatus 100 includes a probe 3 for conducting with the liquid crystal panel 2 and a probe moving unit 4 for moving the probe 3 onto each liquid crystal panel 2 as shown in FIG. ing.
- the wiring defect detection device 100 also includes an infrared camera 5 for acquiring an infrared image, and camera moving means 6 for moving the infrared camera 5 on the liquid crystal panel 2.
- the wiring defect detection apparatus 100 includes a control unit 7 (measurement unit, determination unit, defect determination unit) that controls the probe movement unit 4 and the camera movement unit 6.
- a resistance measuring unit 8 for measuring the resistance between the wirings of the liquid crystal panel 2 and a voltage applying unit 9 (voltage applying means) for applying a voltage between the wirings of the liquid crystal panel 2.
- the resistance measuring unit 8 and the voltage applying unit 9 are controlled by the control unit 7.
- the control unit 7 is connected to a data storage unit 10 that stores resistance values between the wires and image data.
- FIG. 2 is a perspective view showing a configuration of the wiring defect detection apparatus 100 in the present embodiment.
- the wiring defect detection apparatus 100 is configured such that an alignment stage 11 is installed on a base, and the mother substrate 1 can be placed on the alignment stage 11.
- the alignment stage 11 on which the mother substrate 1 is placed is adjusted in parallel with the XY coordinate axes of the probe moving unit 4 and the camera moving unit 6.
- an optical camera 12 provided above the alignment stage 11 for confirming the position of the mother substrate 1 is used.
- the probe moving means 4 is slidably installed on a guide rail 13 a disposed outside the alignment stage 11. Further, guide rails 13b and 13c are also installed on the main body side of the probe moving means 4, and the mount portion 14a is installed so as to be able to move in the XYZ coordinate directions along these guide rails 13. A probe 3 corresponding to the liquid crystal panel 2 is mounted on the mount portion 14a.
- the camera moving means 6 is slidably installed on a guide rail 13d disposed outside the probe moving means 4. Further, guide rails 13e and 13f are also installed on the main body of the camera moving means 6, and the three mount portions 14b, 14c, and 14d are separately moved along the guide rails 13 in the XYZ coordinate directions. can do.
- infrared cameras 5 there are two types of infrared cameras 5 provided in the wiring defect detection device 100. One is an infrared camera 5a for macro measurement, and the other is an infrared camera 5b for micro measurement.
- An infrared camera 5a for macro measurement is mounted on the mount portion 14c of the wiring defect detection apparatus 100, an infrared camera 5b for micro measurement is mounted on the mount portion 14b, and an optical camera 16 is mounted on the mount portion 14d. Has been.
- the infrared camera 5a for macro measurement is an infrared camera capable of macro measurement with a field of view extended to about 520 ⁇ 405 mm.
- the infrared camera 5a for macro measurement is configured by combining, for example, four infrared cameras in order to widen the field of view. That is, the field of view per macro measurement infrared camera is approximately 1 ⁇ 4 that of the mother board 1.
- the infrared camera 5b for micro measurement is an infrared camera capable of micro measurement capable of photographing with high resolution although the field of view is as small as about 32 ⁇ 24 mm.
- the camera moving means 6 can be equipped with a laser irradiation device for correcting a defective portion by adding a mount portion.
- the defect can be continuously corrected by irradiating the defect with a laser after specifying the position of the defect.
- the probe moving means 4 and the camera moving means 6 are installed on separate guide rails 13a and 13d, respectively. Therefore, it is possible to move above the alignment stage 11 in the X coordinate direction without interfering with each other. As a result, the infrared cameras 5 a and 5 b and the optical camera 16 can be moved onto the liquid crystal panel 2 while the probe 3 is in contact with the liquid crystal panel 2.
- FIG. 3A is a plan view of one liquid crystal panel 2 among the plurality of liquid crystal panels 2 formed on the mother substrate 1.
- each liquid crystal panel 2 includes a pixel portion 17 in which a TFT is formed at each intersection where the scanning line and the signal line intersect, and a driving circuit that drives the scanning line and the signal line, respectively.
- a portion 18 is formed.
- Terminal portions 19 a to 19 d are installed at the edge of the liquid crystal panel 2, and the terminal portions 19 a to 19 d are connected to the wiring of the pixel portion 17 or the drive circuit portion 18.
- the liquid crystal panel 2 is manufactured by forming a gate electrode, a semiconductor film, a source electrode, a drain electrode, a protective film, and a transparent electrode on a transparent substrate. Below, an example is given and demonstrated about the specific manufacturing method of this liquid crystal panel 2. FIG.
- a metal film such as a titanium film, an aluminum film, and a titanium film is sequentially formed on the entire transparent substrate by sputtering, and then patterned by photolithography to form a gate wiring, a gate electrode, and a capacitor wiring, for example, 4000 mm. It is formed with a thickness of about.
- a silicon nitride film or the like is formed on the entire substrate on which the gate wiring, the gate electrode, and the capacitor wiring are formed by, for example, a plasma CVD (Chemical Vapor Deposition) method, and a gate insulating film is formed to a thickness of about 4000 mm. .
- a plasma CVD Chemical Vapor Deposition
- an intrinsic amorphous silicon film and an n + amorphous silicon film doped with phosphorus are continuously formed on the entire substrate on which the gate insulating film is formed by plasma CVD. Thereafter, these silicon films are patterned into island shapes on the gate electrode by photolithography to form a semiconductor film in which an intrinsic amorphous silicon layer having a thickness of about 2000 mm and an n + amorphous silicon layer having a thickness of about 500 mm are stacked. .
- an aluminum film, a titanium film, and the like are formed on the entire substrate on which the semiconductor film is formed by sputtering, and then patterned by photolithography, so that the source wiring, the source electrode, the conductive film, and the drain electrode are thickened. It is formed to about 2000 mm.
- the n + amorphous silicon layer of the semiconductor film is etched using the source electrode and the drain electrode as a mask, thereby patterning the channel portion to form a TFT.
- an acrylic photosensitive resin is applied to the entire substrate on which the TFT is formed by spin coating, and the applied photosensitive resin is exposed through a photomask. Thereafter, the exposed photosensitive resin is developed to form an interlayer insulating film having a thickness of about 2 ⁇ m to 3 ⁇ m on the drain electrode. Subsequently, contact holes are formed in the interlayer insulating film for each pixel.
- an ITO film is formed on the entire substrate on the interlayer insulating film by sputtering, and then patterned by photolithography to form a transparent electrode with a thickness of about 1000 mm.
- the liquid crystal panel 2 (semiconductor substrate) can be formed as described above.
- An example of the above manufacturing method can be applied to the mother substrate 1 (semiconductor substrate), and a plurality of (for example, eight in FIG. 1B) liquid crystal panels are formed using a large transparent substrate.
- the wiring defect inspection method described below is performed, and the defect is detected for those in which the defect is detected. Repair is performed, and if necessary, the wiring defect inspection method is performed again to produce a good product having no defect. If no defect is detected, the product is regarded as good at that time.
- each liquid crystal panel can be separated from the mother substrate to complete the manufacture as one liquid crystal panel.
- Defect repair includes, for example, a method of cutting a short-circuit portion by irradiating a laser, but is not limited thereto.
- FIG. 3B is a plan view of the probe 3 (voltage applying means) for conducting with the terminal portions 19a to 19d installed on the liquid crystal panel 2.
- the probe 3 has a frame shape substantially the same size as the liquid crystal panel 2 shown in FIG. 3A, and a plurality of probes corresponding to the terminal portions 19a to 19d installed on the liquid crystal panel 2. Needles 21a to 21d are provided.
- the probe needles 21a to 21d are individually connected to the resistance measuring unit 8 and the voltage applying unit 9 shown in FIG. 1A through switching relays (not shown). Can do. For this reason, the probe 3 can selectively connect a plurality of wirings connected to the terminal portions 19a to 19d, or connect the plurality of wirings together.
- the probe 3 has a frame shape that is almost the same size as the liquid crystal panel 2. Therefore, when the positions of the terminal portions 19a to 19d and the probe needles 21a to 21d are aligned, the positions can be confirmed using the optical camera 16 from the inside of the frame of the probe 3.
- the wiring defect detection device 100 includes the probe 3 and the resistance measurement unit 8 connected to the probe 3.
- the probe 3 is electrically connected to the liquid crystal panel 2 and will be described later. Such a resistance value of each wiring and a resistance value between adjacent wirings can be measured.
- the wiring defect detection device 100 includes a probe 3, a voltage application unit 9 connected to the probe 3, and an infrared camera 5. Then, the temperature of the liquid crystal panel 2 is measured using the infrared camera 5 before and after applying a voltage between the wirings of the liquid crystal panel 2 via the probe 3 or between the wirings.
- the liquid crystal panel 2 is imaged with a moving image using the infrared camera 5 before and after applying the voltage.
- a moving image obtained by imaging is stored in the data storage unit 10.
- the moving image stored in the data storage unit 10 is subjected to data processing in the control unit 7, and a temperature value for each pixel is calculated. This temperature value is also stored in the data storage unit 10.
- control unit 7 calculates a difference image from the image before voltage application and the image after voltage application stored in the data storage unit 10, and based on the heat generated by voltage application for each pixel of the imaged data. Calculate the temperature rise value.
- this “pixel of imaged data” is expressed as “data pixel”.
- the calculated temperature rise value exceeds a preset temperature rise threshold within a preset time (number of frames) threshold, it is determined that the corresponding data pixel includes a defect. That is, it is specified as a defective part.
- the preset time (frame number) threshold and the preset temperature rise threshold will be described later.
- the wiring defect detection device 100 of the present embodiment can perform both resistance inspection and infrared detection with a single device.
- FIG. 4 is a flowchart of a wiring defect detection method using the wiring defect detection apparatus 100 according to this embodiment.
- wiring defect detection is sequentially performed on the plurality of liquid crystal panels 2 formed on the mother substrate 1 shown in FIG. 1B by the steps S1 to S21. .
- the wiring defect detection method of this embodiment is (I) a voltage applying step of applying a predetermined voltage to the wiring formed on the liquid crystal panel 2; (Ii) a measurement step of continuously measuring the temperature of at least a part of the liquid crystal panel 2 to which a voltage is applied in the voltage application step using the infrared camera 5 for a certain period of time; (Iii) a determination step of determining whether or not a temperature rise value derived by subtracting the temperature value of the liquid crystal panel 2 before voltage application from the temperature value measured in the measurement step is equal to or greater than a threshold value; (Iv) If it is determined in the determination step that the threshold is greater than or equal to the threshold, it is determined that the wiring formed in the region has a short-circuit defect, and if it is determined that the wiring is less than the threshold, the wiring A defect determination step for determining that there is no short-circuit defect, including.
- step S1 the mother substrate 1 is placed on the alignment stage 11 of the wiring defect detection apparatus 100 shown in FIG. 2, and the position of the substrate is adjusted to be parallel to the XY coordinate axes.
- step S2 the probe 3 is moved by the probe moving means 4 shown in FIG. 2 to the upper part of the liquid crystal panel 2 to be detected on the mother substrate 1 whose position is adjusted in step S1, and the probe needles 21a to 21d are moved to the liquid crystal. It contacts the terminal portions 19a to 19d of the panel 2.
- step S3 following step S2, corresponding to various defect detection modes, wiring for resistance inspection or between wirings is selected, and the probe needle 21 to be conducted is switched.
- FIGS. 5A to 5C schematically show the positions of the defective portions 23 (wiring short-circuit portions) generated in the pixel portion 17 as an example.
- FIG. 5A shows, for example, in a liquid crystal panel in which the wiring X and the wiring Y intersect vertically like the scanning line and the signal line, the defective portion 23 in which the wiring X and the wiring Y are short-circuited at the intersection. Is shown.
- the probe needle 21 to be conducted is switched to the pair of 21a and 21d or the pair of 21b and 21c shown in FIG. 3, and the resistance value between the wirings is measured one-to-one with respect to the wirings X1 to X10 and the wirings Y1 to Y10.
- the presence or absence of the defective portion 23 can be specified.
- FIG. 5B shows a defective portion 23 that is short-circuited between adjacent wiring lines X such as a scanning line and an auxiliary capacitance line.
- a defective portion 23 is obtained by switching the probe needle 21 to be conducted to a pair of the odd number 21b and the even number 21d, and measuring the resistance value between the adjacent wires X1 to X10.
- the wiring with the part 23 can be specified.
- FIG. 5C shows a defective portion 23 short-circuited between adjacent wirings Y such as a signal line and an auxiliary capacitance line.
- a defective portion 23 is obtained by switching the probe needle 21 to be conducted to a pair of the odd number 21a and the even number 21c, and measuring the resistance value between the adjacent wires Y1 to Y10 to thereby detect the defect.
- the wiring with the portion 23 can be specified.
- step S4 the probe needle 21 switched in step S3 is conducted, and the resistance value between the selected wirings or wirings is measured and acquired.
- the acquired resistance value is stored in the data storage unit 10.
- step S5 the resistance value acquired in step S4 and the resistance value between the wirings of the panel (reference panel) having no defect and stored in advance in the data storage unit 10 are compared.
- the process proceeds to step S20. If the resistance value acquired in step S4 is the same as the resistance value between the wirings of the panel having no defect or between the wirings, it can be specified that there is no defect in this detection mode.
- step S5 when the resistance value acquired in step S4 is not the same as the resistance value between the wiring of the panel having no defect stored in advance in the data storage unit 10 or between the wirings, the process proceeds to step S6. If the resistance value acquired in step S4 is not the same as the resistance value between the wirings of the panel having no defects and stored in advance in the data storage unit 10, there is a defect between the wirings or the wirings in this detection mode. It can be identified that there is a possibility. If there is a possibility that a defect exists, it is necessary to perform infrared detection.
- step S6 it is not always necessary to specify the position by infrared detection. That is, if a resistance inspection is performed for every combination of the wiring X and the wiring Y, the position can be specified, so that infrared detection is not necessary. However, since the number of combinations is enormous, it takes a long time.
- the total number of combinations is about 2.70 million. If a resistance test is performed for each such combination, the tact time becomes long and the detection processing capability is greatly reduced, which is not realistic. Therefore, the number of resistance inspections can be reduced by combining all the combinations of the wiring X and the wiring Y into several and performing a resistance inspection. For example, if a resistance test is performed between the wiring X grouped together and the wiring Y grouped together, the number of times of resistance testing is only one. However, a short circuit between wirings can be detected by resistance inspection, but the position cannot be specified. Therefore, it is necessary to specify the position of the defect portion 23 by infrared detection.
- the resistance test between adjacent wires takes a long time because it is a huge number.
- the number of resistance inspections between adjacent wires X is 1079
- the number of resistance inspections between adjacent wires Y is 1919.
- the number of resistance inspections is only one. Times.
- the number of resistance inspections is only one. Times.
- a short circuit between wirings can be detected by resistance inspection, but the position cannot be specified. Therefore, it is necessary to specify the position of the defect portion 23 by infrared detection.
- step S6 voltage application step
- the voltage value applied to the wiring by infrared detection for the liquid crystal panel 2 is set based on the resistance value stored in the data storage unit 10 in step S4.
- step S6 voltage application step
- an applied voltage V (volt) proportional to the square root of the resistance value acquired in step S4 is applied to the liquid crystal panel 2. That is, in step S6, the applied voltage V (volt) is changed to the following formula (1);
- the resistance value of the short-circuit path including the defect 23 varies greatly depending on the type of substrate or the cause of the short-circuit on the substrate, such as the occurrence location of the defect 23.
- step S6 of this embodiment per unit time
- the calorific value of can be made constant.
- step S7 before applying a voltage based on the voltage value set in step S6 to the liquid crystal panel 2, a moving image of the liquid crystal panel 2 that does not generate heat is read using the infrared camera 5. More specifically, the control unit 7 shown in FIG. 1 measures the temperature of the liquid crystal panel 2 that does not generate heat by using the infrared camera 5, and stores the measured temperature value data in the computer. The data is read into the memory and stored in the data storage unit 10.
- step S8 voltage application process, measurement process
- a voltage based on the voltage value set in step S6 is applied to the liquid crystal panel 2.
- the infrared camera 5 is used to read a moving image of the liquid crystal panel 2 that has generated heat after the voltage is applied.
- the control unit 7 shown in FIG. 1 measures the temperature value of the liquid crystal panel 2 that is generating heat using the infrared camera 5, and stores the measured temperature value data as image data.
- the data is read into the computer memory and stored in the data storage unit 10.
- the adjustment of the applied voltage is performed by the control unit 7 controlling the voltage application unit 9.
- step S9 determination step
- the control unit 7 calculates a temperature increase threshold value from the moving image before voltage application read in step S7.
- a method for calculating the temperature increase threshold in the present embodiment will be described with reference to FIG.
- the temperature rise threshold value is obtained by integrating the moving images between adjacent frames of the moving image (9 frames) of the liquid crystal panel 2 that is not generating heat before voltage application.
- a background image signed (not absolute value)
- the average value and standard deviation of the histogram of this background image the following equation (4);
- the temperature rise threshold value is increased from Equation (4), so that background noise can be reduced.
- the temperature rise threshold is calculated by setting n to 4, and the temperature rise threshold is set to about 0.1 ( ⁇ K).
- n 4 in Equation (4).
- step S10 the control unit 7 calculates a reference temperature value for each data pixel of the moving image of the liquid crystal panel 2 that has not been heated and is read in step S7 before voltage application.
- the reference temperature value is a temperature value corresponding to the background image created by the method shown in FIG.
- step S11 determination step
- the control unit 7 calculates a temperature increase value for each data pixel of the moving image of the liquid crystal panel 2 that has generated heat since the voltage read in step S8 is applied.
- the temperature rise value is expressed by the following equation (5):
- step S12 defect determination step
- step S13 defect determination step
- the number of frames after the temperature measurement of the liquid crystal panel 2 is started by the infrared camera 5 is counted.
- step S14 defect determination step
- the process proceeds to step S15, and the number of frames at this time is acquired.
- the process returns to step S12, and whether or not the number of frames after the voltage is applied to the liquid crystal panel 2 again reaches the frame number threshold value. Is determined.
- step S15 defect determination step
- the number of frames counted in step S13 is acquired.
- step S16 it is determined whether or not the number of frames acquired in step S15 is less than a preset frame number threshold.
- the process proceeds to the next step S17 (defect determination step), and the corresponding data pixel includes a defect. Determined. That is, it is specified as a defective part.
- step S18 defect determination step
- the threshold value for the time after the voltage is applied to the liquid crystal panel 2 is set to 3 seconds, and the frame rate is 25 frames / second, the threshold value for the frame number is 75. It becomes a frame.
- the frame number threshold in this embodiment is set to 75 frames.
- the present invention is not limited to the threshold value “3 seconds” and the frame number threshold value “75”.
- the threshold value can be a value that can be obtained by adding the average value of the histogram described above to an integer multiple of the standard deviation.
- the threshold value is preferably a value that can be obtained by adding the average value of the histogram described above to a standard deviation of 2 to 4 times. If it is less than 2 times, not only defects but also background noise will be over-detected, so it tends to be difficult to separate the defect and the background, and if it exceeds 4 times, the defect will be buried in the background and the defective part will be detected. It tends to be difficult.
- the predetermined time is 75 frames or more and 250 frames or less. If it is less than 75 frames, it becomes difficult to separate the defect and the background due to insufficient temperature rise of the defective part, and if it exceeds 250 frames, the calculation load increases (processing takes time), and the tact time increases. .
- FIG. 7 a temperature change curve of a defective portion is shown. From the curve in the figure, it can be seen that the temperature rise threshold value of 0.1 ( ⁇ K) is exceeded when the number of frames is approximately 4 (S14 and S15). Since the frame number threshold in the present embodiment is 75 frames as described above, it can be seen that it is larger than 4 (S16). Therefore, it can be determined that the data pixel includes a defect. That is, it can be identified as a defective part (S17).
- FIG. 8 where the temperature curve change in the background portion is shown. From the curve in the figure, it can be seen that the curve reaches the frame number threshold without exceeding the temperature rise threshold at any number of frames (S14, S12, and S15). That is, the number of frames in this case is never smaller than the frame number threshold “75” (S16). Therefore, it can be determined that the data pixel does not include a defect. In other words, it can be identified as the background portion (S18).
- the presence or absence of a defect in each data pixel is determined by the control unit 10.
- step S19 it is determined whether or not detection has been completed for all data pixels in the liquid crystal panel 2 being detected. If detection has not been completed for all data pixels in the liquid crystal panel 2 being detected, the process returns to step S11, and detection is started for the next data pixel to be detected, and the presence or absence of a defect is determined. The On the other hand, when the detection is completed for all the data pixels in the liquid crystal panel 2 being detected, the process proceeds to the next step S20.
- step S20 it is determined whether or not the detection is completed in all detection modes in the liquid crystal panel 2 being detected.
- the process returns to step S3, the connection of the probe 3 is switched so as to correspond to the next detection mode, and the defect detection is repeated. It is. On the contrary, in the liquid crystal panel 2 being detected, when the detection is completed in all the detection modes, the process proceeds to the next step S21.
- the above-described detection mode indicates a detection method (voltage application method) corresponding to the type of the defect portion 23 as shown in FIG. That is, the detection method corresponding to the short-circuit defect between the wiring X and the wiring Y in FIG. 5A, the detection method corresponding to the short-circuit defect between the wirings X in FIG. 5B, and FIG. These are three detection modes which are detection methods corresponding to short-circuit defects between the wires Y.
- step S21 it is determined whether or not the defect detection has been completed on all the liquid crystal panels 2 for the mother substrate 1 being detected.
- the process returns to step S2, the probe is moved to the next liquid crystal panel 2 to be detected, and the defect detection is repeated.
- the defect detection is completed in all of the liquid crystal panels 2, the wiring defect detection is completed.
- the wiring defect detection method and the wiring defect detection device are used, whether the defect is low in heat generation due to low heat generation, and is a defect in the defect detection method using the difference image of the infrared image. Even in the case of a defect that is difficult to determine, it is possible to accurately determine the defect 23 on the substrate by using numerical data such as a temperature rise value without using an infrared image that relies on visual observation. Can be detected. In other words, the defect portion 23 on the semiconductor substrate can be detected with high accuracy regardless of the amount of heat generated by the defect portion 23 (infrared image intensity).
- the apparatus similar to the apparatus in the above embodiment is used, and the applied voltage V (volt) is set as follows so as to differ from the embodiment.
- step S6 the applied voltage V (volt) proportional to the square root of the resistance value acquired in step S4 is applied to the liquid crystal panel 2.
- an applied voltage V (volt) proportional to the resistance value acquired in step S4 is applied to the liquid crystal panel 2 (FIG. 1B and FIG. 2).
- step S6 of the present embodiment the applied voltage V (volt) is expressed by the following equation (6);
- the current can be made constant by appropriately determining the applied voltage.
- the resistance value R of the wiring formed on the substrate is expressed by the following equation (8);
- the calorific value of the wiring i per unit length of the wiring i is expressed by the following formula (10) from the above formulas (2), (7) and (9):
- FIG. 9 is a diagram for explaining the short-circuit path, and is an example of an electrical wiring diagram of the thin film transistor substrate.
- scanning lines (wirings) 31 to 35 and signal lines (wirings) 41 to 45 are arranged in a grid pattern on a glass substrate, and thin film transistors and transparent pixel electrodes (not shown) are connected to each intersection.
- This is a substrate on which 5 ⁇ 5 pixels are formed as a whole.
- a thin film transistor substrate and a common electrode substrate (not shown) are arranged in parallel and a liquid crystal is sealed between them, which is a liquid crystal panel. Further, as shown in FIG.
- the leading end portions of the scanning lines 31p to 35p of the scanning line are commonly connected to the thin film transistor substrate by the common line 30 to prevent electrostatic breakdown.
- the signal lines In the thin film transistor substrate shown in FIG. 9, a short-circuit portion 50 is formed between the scanning line 33 and the signal line 43.
- the scan line 33 and signal per unit length are considered.
- the heat generation amount of the line 43 can be made constant.
- the scanning line 33 and the signal line 43 can be stably recognized from the infrared image by appropriately determining the constant m in advance regardless of the electrical resistance of the short-circuited portion.
- the short-circuited portion can be specified. If the resistance value at the short-circuited portion is high, the amount of heat generated at the short-circuited portion increases, and therefore the short-circuited portion can be easily identified from the infrared image.
- control unit 7 may perform the process of calculating the above formula (1) or formula (6) each time.
- the relationship between the resistance value and the voltage may be stored in advance as a table, and the control unit 7 may refer to this table each time and determine the voltage from the resistance value.
- the wiring defect detection method and the wiring defect detection apparatus according to the present embodiment can recognize a defect from an infrared image as in the embodiment.
- the wiring defect detection method includes: A voltage application step of applying a predetermined voltage to the wiring formed on the semiconductor substrate; A measuring step of continuously measuring a temperature of at least a part of the region of the semiconductor substrate to which a voltage is applied in the voltage applying step using an infrared camera; A determination step of determining whether a temperature rise value derived by subtracting the temperature value of the semiconductor substrate before applying the voltage from the temperature value measured in the measurement step is equal to or greater than a threshold value; If it is determined in the determination step that the threshold is greater than or equal to the threshold, it is determined that the wiring formed in the region has a short-circuit defect, and if it is determined that the wiring is less than the threshold, the wiring has a short-circuit defect.
- a defect determination step for determining that there is no It is characterized by including.
- the defect since the defect has a low heat generation, the temperature change is insufficient, and it is difficult to determine whether or not the defect is detected by the defect detection method using the difference image of the infrared image.
- a defect can be detected with high accuracy by making a determination using numerical data such as a temperature rise value without using an infrared image that relies on visual observation. In other words, it is possible to detect a defect due to a short circuit on the semiconductor substrate with high accuracy regardless of the heat generation amount of the defect (intensity of the infrared image).
- the wiring defect detection method includes:
- the threshold used in the determining step is obtained by subtracting the moving image between adjacent frames of the moving image obtained by continuously capturing the semiconductor substrate before applying the voltage using an infrared camera for a certain period of time. It is preferable that the average value is obtained by adding the average value to an integral multiple of the standard deviation using the average value and standard deviation of the histogram of the background image created by performing the averaging.
- the wiring defect detection method includes: In the voltage application step, it is preferable to measure the resistance value of the wiring and apply a voltage specified based on the measured resistance value to cause the wiring to generate heat.
- the voltage specified based on the resistance value acquired in advance by the resistance inspection is applied to the semiconductor substrate (leak defect substrate), so that the applied voltage is too high and the wiring includes the short-circuit defect. Will not burn out.
- the threshold value can be obtained by adding the average value to a value obtained by setting the standard deviation to 2 to 4 times.
- the optimum temperature rise threshold value can be obtained, and the background noise can be optimally reduced, so that defects can be detected with high accuracy.
- the predetermined time can be 75 frames or more and 250 frames or less.
- the background portion and the defect portion on the semiconductor substrate can be optimally separated, and the defect can be detected with high accuracy.
- the wiring defect detection device is Voltage applying means for applying a predetermined voltage to the wiring formed on the semiconductor substrate; An infrared camera for measuring the temperature of the semiconductor substrate; Measuring means for the infrared camera to continuously measure the temperature of the semiconductor substrate for a certain period of time; Determining whether a temperature rise value is derived by subtracting the temperature value of the semiconductor substrate before applying the voltage from the temperature value obtained by the measuring means, and determining whether the derived temperature rise value is equal to or greater than a threshold value Means, Defect determining means that determines that the wiring has a short-circuit defect when the determination means determines that the threshold is equal to or greater than the threshold, and determines that the short-circuit defect does not exist when the wiring is determined to be less than the threshold. And The measurement unit, the determination unit, and the defect determination unit are provided in a control unit.
- the defect since the defect has a low heat generation, the temperature change is insufficient, and it is difficult to determine whether or not the defect is detected by the defect detection method using the difference image of the infrared image.
- a defect can be detected with high accuracy by making a determination using numerical data such as a temperature rise value without using an infrared image that relies on visual observation.
- the defect can be detected with high accuracy regardless of the heat generation amount of the defective portion (intensity of the infrared image).
- a method for manufacturing a semiconductor substrate includes: Forming a semiconductor substrate on which at least one of a gate electrode, a source electrode, and a drain electrode, a wiring connected to the gate electrode, a wiring connected thereto, and a semiconductor film are formed on the substrate; , A voltage application step of applying a predetermined voltage to the wiring formed on the semiconductor substrate; A measuring step of continuously measuring a temperature of at least a part of the region of the semiconductor substrate to which a voltage is applied in the voltage applying step using an infrared camera; A determination step of determining whether a temperature rise value derived by subtracting the temperature value of the semiconductor substrate before applying the voltage from the temperature value measured in the measurement step is equal to or greater than a threshold value; If it is determined in the determination step that the threshold is greater than or equal to the threshold, it is determined that the wiring formed in the region has a short-circuit defect, and if it is determined that the wiring is less than the threshold, the wiring has a short-circuit defect.
- the present invention can be used for detecting a wiring state of a semiconductor substrate having wiring such as a liquid crystal panel.
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Abstract
Description
半導体基板に形成された配線に所定の電圧を印加する電圧印加工程と、
上記電圧印加工程にて電圧印加した半導体基板の少なくとも一部の領域の温度を、赤外線カメラを用いて一定時間連続して測定する測定工程と、
上記測定工程で測定した温度値から、該電圧印加する前の該半導体基板の温度値を差分して導出される温度上昇値が、閾値以上であるか否かを判断する判断工程と、
上記判断工程にて閾値以上であると判断された場合には上記領域に形成された上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該配線に短絡欠陥は無いと判定する欠陥判定工程と、
を含むことを特徴としている。
半導体基板に形成された配線に所定の電圧を印加する電圧印加手段と、
上記半導体基板の温度を測定する赤外線カメラと、
上記赤外線カメラが上記半導体基板の温度を一定時間連続して測定する測定手段と、
上記測定手段によって得られる温度値から、該電圧印加する前の該半導体基板の温度値を差分して温度上昇値を導出し、導出した温度上昇値が閾値以上であるか否かを判断する判断手段と、
上記判断手段で上記閾値以上であると判断された場合には上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該短絡欠陥は無いと判定する欠陥判定手段とを備えており、
上記測定手段、上記判断手段、および上記欠陥判定手段を、制御部に設けていることを特徴としている。
基板上に、ゲート電極、ソース電極、および、ドレイン電極のうちの少なくとも1つと、それに繋がる配線と、半導体膜とを形成して、当該配線が形成された半導体基板を形成する半導体基板形成工程と、
上記半導体基板に形成された上記配線に所定の電圧を印加する電圧印加工程と、
上記電圧印加工程にて電圧印加した半導体基板の少なくとも一部の領域の温度を、赤外線カメラを用いて一定時間連続して測定する測定工程と、
上記測定工程で測定した温度値から、該電圧印加する前の該半導体基板の温度値を差分して導出される温度上昇値が、閾値以上であるか否かを判断する判断工程と、
上記判断工程にて閾値以上であると判断された場合には上記領域に形成された上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該配線に短絡欠陥は無いと判定する欠陥判定工程と、
を含むことを特徴としている。
図1の(a)は、本実施形態における配線欠陥検出装置100の構成を示すブロック図であり、図1の(b)は、配線欠陥検出装置100を用いて配線欠陥検出される対象であるマザー基板1(半導体基板)の斜視図である。
図4は、本実施形態に係る配線欠陥検出装置100を用いた配線欠陥検出方法のフローチャートである。
(i)液晶パネル2に形成された配線に所定の電圧を印加する電圧印加工程と、
(ii)電圧印加工程にて電圧印加した液晶パネル2の少なくとも一部の領域の温度を、赤外線カメラ5を用いて一定時間連続して測定する測定工程と、
(iii)測定工程で測定した温度値から、電圧印加する前の液晶パネル2の温度値を差分して導出される温度上昇値が、閾値以上であるか否かを判断する判断工程と、
(iv)上記判断工程にて閾値以上であると判断された場合には上記領域に形成された上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該配線に短絡欠陥は無いと判定する欠陥判定工程と、
を含む。
本実施形態によれば、液晶パネル2に電圧が印加された後に、液晶パネル2におけるデータ画素ごとに時間に対する温度値が測定される。そして、データ画素ごとに予め算出された基準温度値との差分により、データ画素ごとの温度上昇値が算出される。更に、測定する時間(フレーム数)および温度上昇値に閾値を設定することにより、この設定された時間閾値(フレーム数閾値)内において温度上昇閾値を越えたデータ画素には、欠陥が含まれていると判定される。つまり、欠陥部だと特定される。
(4)変形例
本変形例では、上記実施形態における装置と同様の装置を用い、印加電圧V(ボルト)が実施形態と異なるよう、以下のように設定する。
本発明に係る配線欠陥検出方法は、
半導体基板に形成された配線に所定の電圧を印加する電圧印加工程と、
上記電圧印加工程にて電圧印加した半導体基板の少なくとも一部の領域の温度を、赤外線カメラを用いて一定時間連続して測定する測定工程と、
上記測定工程で測定した温度値から、該電圧印加する前の該半導体基板の温度値を差分して導出される温度上昇値が、閾値以上であるか否かを判断する判断工程と、
上記判断工程にて閾値以上であると判断された場合には上記領域に形成された上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該配線に短絡欠陥は無いと判定する欠陥判定工程と、
を含むことを特徴としている。
上記判断工程において用いられる上記閾値は、上記電圧印加する前の上記半導体基板を赤外線カメラを用いて一定時間連続して撮像して得られる動画像の隣接フレーム間において、該動画像を差分して積算平均することにより作成した背景画像のヒストグラムの平均値および標準偏差を用いて、該標準偏差を整数倍したものに該平均値を加算して得る、ことが好ましい。
上記電圧印加工程では、上記配線の抵抗値を測定して、測定した抵抗値に基づいて特定された電圧を印加して、該配線を発熱させる、ことが好ましい。
半導体基板に形成された配線に所定の電圧を印加する電圧印加手段と、
上記半導体基板の温度を測定する赤外線カメラと、
上記赤外線カメラが上記半導体基板の温度を一定時間連続して測定する測定手段と、
上記測定手段によって得られる温度値から、該電圧印加する前の該半導体基板の温度値を差分して温度上昇値を導出し、導出した温度上昇値が閾値以上であるか否かを判断する判断手段と、
上記判断手段で上記閾値以上であると判断された場合には上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該短絡欠陥は無いと判定する欠陥判定手段とを備えており、
上記測定手段、上記判断手段、および上記欠陥判定手段を、制御部に設けていることを特徴としている。
基板上に、ゲート電極、ソース電極、および、ドレイン電極のうちの少なくとも1つと、それに繋がる配線と、半導体膜とを形成して、当該配線が形成された半導体基板を形成する半導体基板形成工程と、
上記半導体基板に形成された上記配線に所定の電圧を印加する電圧印加工程と、
上記電圧印加工程にて電圧印加した半導体基板の少なくとも一部の領域の温度を、赤外線カメラを用いて一定時間連続して測定する測定工程と、
上記測定工程で測定した温度値から、該電圧印加する前の該半導体基板の温度値を差分して導出される温度上昇値が、閾値以上であるか否かを判断する判断工程と、
上記判断工程にて閾値以上であると判断された場合には上記領域に形成された上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該配線に短絡欠陥は無いと判定する欠陥判定工程と、
を含むことを特徴としている。
2 液晶パネル(半導体基板)
3 プローブ(電圧印加手段)
4 プローブ移動手段
5、5a、5b 赤外線カメラ
6 カメラ移動手段
7 制御部(測定手段、判断手段、欠陥判定手段)
8 抵抗測定部
9 電圧印加部(電圧印加手段)
10 データ記憶部
11 アライメントステージ
12、16 光学カメラ
13a、13b、13c、13d、13e、13f ガイドレール
14a、14b、14d、14d マウント部
17 画素部
18 駆動回路部
19a、19b、19c、19d 端子部
21a、21b、21c、21d プローブ部
23 欠陥部(配線短絡部)
30、40a、40b 共通線
31、32、33、34、35 走査線
31p、32p、33p、34p、35p 走査線引出線
41、42、43、44、45 信号線
41p、42p、43p、44p、45p 信号線引出線
50 短絡箇所
100 配線欠陥検出装置
Claims (7)
- 半導体基板に形成された配線に所定の電圧を印加する電圧印加工程と、
上記電圧印加工程にて電圧印加した半導体基板の少なくとも一部の領域の温度を、赤外線カメラを用いて一定時間連続して測定する測定工程と、
上記測定工程で測定した温度値から、該電圧印加する前の該半導体基板の温度値を差分して導出される温度上昇値が、閾値以上であるか否かを判断する判断工程と、
上記判断工程にて閾値以上であると判断された場合には上記領域に形成された上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該配線に短絡欠陥は無いと判定する欠陥判定工程と、
を含んでいることを特徴とする配線欠陥検出方法。 - 上記判断工程において用いられる上記閾値は、上記電圧印加する前の上記半導体基板を赤外線カメラを用いて一定時間連続して撮像して得られる動画像の隣接フレーム間において、該動画像を差分して積算平均することにより作成した背景画像のヒストグラムの平均値および標準偏差を用いて、該標準偏差を整数倍したものに該平均値を加算して得る、
ことを特徴とする請求項1に記載の配線欠陥検出方法。 - 上記電圧印加工程では、上記配線の抵抗値を測定して、測定した抵抗値に基づいて特定された電圧を印加して、該配線を発熱させる、
ことを特徴とする請求項1または2に記載の配線欠陥検出方法。 - 上記閾値は、上記標準偏差を2倍以上4倍以下としたものに上記平均値を加算して得る、ことを特徴とする請求項2に記載の配線欠陥検出方法。
- 25fpsの場合、上記一定時間を75フレーム以上、250フレーム以下とする、
ことを特徴とする請求項1~3の何れかに記載の配線欠陥検出方法。 - 半導体基板に形成された配線に所定の電圧を印加する電圧印加手段と、
上記半導体基板の温度を測定する赤外線カメラと、
上記赤外線カメラが上記半導体基板の温度を一定時間連続して測定する測定手段と、
上記測定手段によって得られる温度値から、該電圧印加する前の該半導体基板の温度値を差分して温度上昇値を導出し、導出した温度上昇値が閾値以上であるか否かを判断する判断手段と、
上記判断手段で上記閾値以上であると判断された場合には上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該短絡欠陥は無いと判定する欠陥判定手段とを備えており、
上記測定手段、上記判断手段、および上記欠陥判定手段を、制御部に設けていることを特徴とする配線欠陥検出装置。 - 基板上に、ゲート電極、ソース電極、および、ドレイン電極のうちの少なくとも1つと、それに繋がる配線と、半導体膜とを形成して、当該配線が形成された半導体基板を形成する半導体基板形成工程と、
上記半導体基板に形成された上記配線に所定の電圧を印加する電圧印加工程と、
上記電圧印加工程にて電圧印加した半導体基板の少なくとも一部の領域の温度を、赤外線カメラを用いて一定時間連続して測定する測定工程と、
上記測定工程で測定した温度値から、該電圧印加する前の該半導体基板の温度値を差分して導出される温度上昇値が、閾値以上であるか否かを判断する判断工程と、
上記判断工程にて閾値以上であると判断された場合には上記領域に形成された上記配線に短絡欠陥があると判定し、該閾値未満であると判断された場合には該配線に短絡欠陥は無いと判定する欠陥判定工程と、
を含むことを特徴とする、半導体基板の製造方法。
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CN201280039453.4A CN103733055B (zh) | 2011-08-31 | 2012-08-30 | 配线缺陷检测方法和配线缺陷检测装置、以及半导体基板的制造方法 |
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CN104297612A (zh) * | 2014-08-04 | 2015-01-21 | 浪潮(北京)电子信息产业有限公司 | 一种检测引起短路的器件的方法和装置 |
CN104569722A (zh) * | 2014-12-31 | 2015-04-29 | 江苏武进汉能光伏有限公司 | 一种薄膜电池微短路的测试方法 |
CN108362712B (zh) * | 2018-03-14 | 2022-09-30 | 京东方科技集团股份有限公司 | 一种基板母板及其检测方法 |
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