WO2013012139A1 - Method and apparatus for connecting an electronic component using a high frequency electromagnetic field - Google Patents

Method and apparatus for connecting an electronic component using a high frequency electromagnetic field Download PDF

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Publication number
WO2013012139A1
WO2013012139A1 PCT/KR2011/009875 KR2011009875W WO2013012139A1 WO 2013012139 A1 WO2013012139 A1 WO 2013012139A1 KR 2011009875 W KR2011009875 W KR 2011009875W WO 2013012139 A1 WO2013012139 A1 WO 2013012139A1
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WIPO (PCT)
Prior art keywords
electronic component
high frequency
electrode
adhesive
component
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Application number
PCT/KR2011/009875
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French (fr)
Korean (ko)
Inventor
백경욱
김일
Original Assignee
한국과학기술원
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Publication of WO2013012139A1 publication Critical patent/WO2013012139A1/en

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Definitions

  • the present invention relates to a method and apparatus for connecting electronic components using a high frequency electromagnetic field. More specifically, since no external heat source is used, electrical and mechanical connection between components is possible at low temperature using a polymer adhesive, and furthermore, Compared to the ultrasonic connection method that vibrates the entire structure, it generates heat of specific components having chemical dipoles with high-frequency electromagnetic fields, and connects electronic components using high-frequency electromagnetic fields that can be electrically and mechanically bonded without external physical vibration transmitted to the entire adhesive structure. A method and apparatus are disclosed.
  • connection technology is increasing with the age of light and thin, high performance, high integration, and environmentally friendly semiconductor package technology.
  • solder bonding gold wire connection
  • socket type board-to-board connection etc.
  • it provides a simple and inexpensive process, enables extremely fine electrode pitch, lead-free, environmentally friendly fluxless process.
  • the development of the connection technology using the adhesive which has the advantage of low temperature process, etc. is progressing.
  • Adhesives as bonding materials for electronic packages are largely in the form of an isotropic conductive adhesive (ICA), anisotropic conductive adhesive (ACA), and non-conductive adhesive (NCA). It is a kind of composite material which is usually composed of conductive metal particles and polymer resin having insulation and adhesion, and the transition from NCA or ACA to ICA occurs depending on the content of the conductive particles.
  • the content value of the conductive particles in which such electrical variation occurs is called a percolation threshold.
  • the adhesive without any conductive particles is NCA, and if the content is less than the percolation threshold, the adhesive becomes ACA. If the adhesive becomes more than that, the adhesive becomes ICA having electricity.
  • the purpose, function, and field of application for electronic component package bonding materials are also different.
  • FIG. 1 An example of application of an isotropic conductive adhesive, i.e., a non-solder flip chip package bonding material, is shown in FIG.
  • ICA is applied onto a non-solder bump such as a gold stud bump, a gold plating bump, and an electroless nickel / gold bump formed on a semiconductor chip, and then alignment between the non-solder bump and the substrate electrode is performed.
  • Heat is then applied to cure the ICA to make electrical connections between the nonsolder bumps and the substrate electrodes.
  • the heating temperature depends on the ICA curing conditions, but usually takes 10 to 30 minutes at 180 °C.
  • An underfill process is then performed between the chip and the substrate to improve the reliability of the flip chip package.
  • Anisotropic conductive film is a polymer film having electrical anisotropy and adhesiveness, which is conductive in the thickness direction of the film and insulating in the surface direction, and basically insulates conductive particles such as nickel, gold / polymer, and silver, and thermosetting and thermoplastic insulation. It consists of resin.
  • the conductive particles dispersed in the ACF are placed between the upper and lower electrodes between the flexible circuit substrate on which the chip or the chip is mounted and the glass or rigid substrate and are simultaneously subjected to heat and pressure. And an electrical connection by electrical connection formed by mechanical contact between the lower electrodes. (2) The heat applied at this time causes the curing of the insulating resin, resulting in a strong adhesive force.
  • ACF using a fast curing thermosetting epoxy resin or an acrylic resin has also been commercialized.
  • ACA can also be classified into anisotropic conductive film (ACF) and paste (Anisotropic Conductive Paste (ACP)), and paste-type adhesives have recently been developed for simplicity of the connecting process and the adhesive manufacturing process.
  • ACF anisotropic conductive film
  • ACP Adisotropic Conductive Paste
  • NCFs non-conductive films from which conductive particles are removed for ultra-fine pitch connection and low cost
  • NCP which is also a paste product.
  • NCF or NCP is applied around the substrate electrode and aligned with the chip where the gold stud bump is formed, among the non-solder bumps, and then the NCA is cured by the heat applied while making direct contact between the non-solder bump and the substrate electrode by the thermocompression process. It is a joining mechanism.
  • the bonding materials of the ICA, ACA (ACF, ACP), NCA (NCF, NCP), etc. are bonding materials used for flat panel display module mounting such as LCD, PDP, OLED, surface mounting of electronic components, and semiconductor flip chip connection. It is already actively used in out lead bonding, PCB, chip-on-glass (COG), and chip-on-film (COF) processes in flat panel display module mounting, and is used in non-solder flip chip process and surface component mounting technology. It is expanding its market range.
  • ICA it is a material that can replace the existing soldering used for bonding for assembly of electrical and electronic components or circuit wiring, and its scope of application is similar to that of soldering.
  • it can be used for assembling surface mount components requiring solder reflow or flip chip connection using solder, and bonding can be achieved by thermal curing of ICA at a temperature lower than the soldering reflow process temperature, but this also has a high process temperature and hardening.
  • the disadvantage is that the time is long.
  • Non-solder bumps used in the non-solder flip chip process include gold stud bumps, gold plated bumps, electroless nickel and copper bumps.In this case, high melting point prevents flip chip connection due to reflow, which is why thermocompression bonding by ACF is required.
  • the flip chip connection process is performed by the process.
  • OLB, PCB, COG, COF, Flex-to-Rigid connection process and flip chip process technology using ACF are basically based on the mechanical contact between conductive particles, electrode pads, and non-solder bumps by the thermocompression process, and the surrounding polymer resin. It is a connection process by thermosetting. Accordingly, various problems such as application of connection pressure, uniform thermal curing of the polymer resin, high process temperature and consequently thermal deformation of the package to obtain rapid thermal curing behavior, and substrate flatness should be solved. . In particular, even in the case of a compound semiconductor chip or a silicon chip, which is relatively vulnerable to process pressure, the limitation of the bonding pressure generated in the case of a thin chip has a great difficulty in applying the ACF connection technology.
  • Japanese Patent Application No. 2000-349304 and the like disclose a flip chip mounting method using ultrasonic waves.
  • the electronic package structure physically vibrates in a manner of transmitting and vibrating ultrasonic external vibration to the bonding material in the bonding structure to obtain thermal energy
  • an object of the present invention is to minimize the heat and mechanical damage generated when the electronic component is electrically and mechanically connected using a polymer adhesive material, while effectively supplying an electronic component such as a flip chip or a substrate without supplying heat from an external heat source. It is to provide a method and apparatus that can be connected.
  • the present invention is a method of connecting electronic components using high frequency, the method includes the step of electrically and mechanically bonding by applying a high frequency to the adhesive provided in the electronic component to be connected to generate heat by itself An electronic component connecting method using a high frequency is provided.
  • the applied high frequency heats an interposer layer in contact with the electronic component
  • the interposer layer is a component having a characteristic of having a chemical dipole vibrating by the applied high frequency metal.
  • the component having the chemical dipole includes a compound including one or two or more polar bonds having a polling scale electronegativity difference of 0.3 or more.
  • the adhesive is also a polymer adhesive, wherein the polymer adhesive is any one or two selected from the group consisting of a component, a metal and a ferromagnetic material having a characteristic characteristic of having a chemical dipole vibrated by the high frequency applied thereto.
  • the component having the chemical dipole includes a compound including one or two or more polar bonds having a difference in the polling scale electronegativity of 0.3 or more. to provide.
  • the present invention comprises the steps of: depositing a first electronic component on the first electrode; Placing an adhesive on the first electronic component and aligning a second electronic component to be connected with the first electronic component; Contacting a second electrode with the second electronic component; And applying a high frequency to the adhesive through the first electrode and the second electrode to generate the adhesive, thereby providing an electronic component connecting method using the high frequency.
  • an interposer layer is provided between the second electrode and the second electronic component, and the high frequency generated from the second electrode generates the interposer layer.
  • the interposer layer includes any one selected from the group consisting of a metal, a ferromagnetic material, and a component having a characteristic property of having a chemical dipole vibrated by the applied high frequency wave.
  • the adhesive includes any one or two or more selected from the group consisting of a component, a metal and a ferromagnetic material having a characteristic property of having a chemical dipole vibrated by the applied high frequency, the present invention
  • An electronic component connected to a substrate is provided by the method described above.
  • the present invention provides an electronic component connecting apparatus using a high frequency, the apparatus comprising: a stage; A first electrode provided on the stage; A second electrode spaced apart from the first electrode at a predetermined interval; And a high frequency generator connected to the first electrode and the second electrode, wherein the device connects the electronic component by applying a high frequency to the electronic component provided between the first electrode and the second electrode.
  • An electronic component connecting apparatus using high frequency is provided.
  • the second electrode is provided with an interposer layer, wherein the interposer layer is in contact with the electronic component and is generated by the high frequency applied.
  • the electronic component connecting method according to the present invention generates a specific component contained in the interposer and / or the polymer adhesive using high frequency electromagnetic waves. Since no external heat source is used, connection between parts is possible at low temperature and economical.
  • the present invention which generates a specific component having a chemical dipole and the like with a high frequency electromagnetic field, has no process constraints due to external vibration, as compared with an ultrasonic connection method for vibrating the entire bonded structure.
  • unlike the ultrasonic method using a fixed oscillator since the user is easy to modulate the frequency according to the process conditions, it is possible to proceed with the connection between the parts under various conditions depending on the type of material.
  • FIG. 1 is a diagram illustrating an application example of an isotropic conductive adhesive, ie, a non-solder flip chip package bonding material of ICA.
  • FIG. 2 is a view illustrating a method of conducting electricity by electrical connection formed by mechanically contacting conductive particles dispersed in an ACF between upper and lower electrodes.
  • FIG. 4 is a step diagram of an electronic component connecting method according to the present invention.
  • FIG. 5 is a view illustrating an electronic component connection method according to an embodiment of the present invention.
  • FIGS. 8 to 10 are step-by-step schematic diagrams of an electronic component connecting method according to an embodiment of the present invention.
  • FIG 11 and 12 are schematic diagrams of an electronic component connecting apparatus according to an embodiment of the present invention.
  • the present invention induces connection and bonding between electronic components by using a high frequency electromagnetic field. That is, the present invention aligns the electronic components to be connected, and then applies a high frequency electromagnetic field (high frequency) having a frequency of several kHz or more, or the high frequency and pressure, to the adhesive which comes into contact with the components, depending on the heat generating components. ,
  • the adhesive is exothermic (see FIG. 4).
  • the adhesive preferably includes at least one component capable of generating heat by high frequency.
  • the adhesive may include any one or two or more selected from the group consisting of a component, a metal, or a ferromagnetic material having a characteristic chemical dipole vibrating by an applied high frequency.
  • the component having a chemical dipole is a compound including one or two or more polar bonds having a polling scale electronegativity difference of 0.3 or more.
  • an interposer layer which is a separate insulator layer provided between the electronic component and the high frequency electrode, and simultaneously generates heat by applying high frequency to the adhesive provided between the component. Accordingly, the layer generated by high frequency application according to the present invention becomes two layers (i.e., interposer layer and vice versa adhesive layer) provided on both sides of the upper part.
  • FIG. 5 is a view illustrating an electronic component connection method according to an embodiment of the present invention.
  • a high frequency generator 120 capable of modulating a frequency by a user is connected to two electrodes 100 and 110 facing each other and spaced apart from each other.
  • the first electrode 110 of the two electrodes is provided on the stage (S) to support the force applied downward for the component connection.
  • the first electronic component and the second electronic component 140 and 150 to be connected are provided between the first electrode 110 and the second electrode 100, and an adhesive is formed between the two electronic components 140 and 150. It is provided.
  • an interposer layer 130 which is an insulator layer generated by high frequency applied and prevents electrode contamination by an adhesive, is provided. The efficiency of the process can be increased.
  • the interposer layer 130 which is the insulator layer, is also selected from the group consisting of metal, ferromagnetic material, or component having heat generated by high frequency applied through an electrode, for example, a chemical dipole, in order to increase heat generation efficiency due to high frequency. It is preferable to include any one or two or more selected.
  • the interposer layer 130 contains a compound having a chemical dipole as a component, all or a predetermined component of the interposer layer 130 vibrates by an applied high frequency, and the interposer layer is caused by the molecular unit vibration. 130 generates heat.
  • the metal additive is included in the interposer layer 130, an induced current flows in the metal additive due to the applied high frequency, and thus joule heat is generated in the metal additive contained in the interposer layer 130. In this case, the interposer layer 130 is heated.
  • the interposer layer 130 includes ferromagnetic additives, the electromagnetic energy is converted into thermal energy by hysteresis in which the crystal structure of the ferromagnetic material is repeatedly deformed by an applied high frequency electromagnetic field. ) Is heated.
  • the electronic components can be connected at low temperatures without heating from the outside or physical vibration.
  • the component connecting method according to the present invention provides a technical configuration in which an adhesive is placed between electrodes for high frequency application, and the adhesive also generates heat in the same manner as the interposer layer. Therefore, it is preferable that the adhesive contains any one or two or more selected from the group consisting of a component, a metal, or a ferromagnetic material having a chemical dipole vibrating by the applied high frequency, and the form thereof is a mixed resin or a granular body. Or in the form of fibers.
  • the conductive particles 161 are provided in the adhesive 160.
  • heat generation effects due to high frequency may be expected.
  • FIGS. 8 to 10 are step-by-step schematic diagrams of an electronic component connecting method according to an embodiment of the present invention.
  • a first electronic component 150 which is a substrate or a chip to which an electronic component such as a flip chip is to be connected, is deposited on the first electrode 110. Subsequently, the adhesive 160 is positioned on the first electronic component 150, and another second electronic component 140 is aligned with the second electronic component 150.
  • the electronic component may be a chip, a substrate, or the like, and the adhesive 160 may also be an anisotropic conductive adhesive or nonconductive adhesive.
  • a second electrode 100 for high frequency application is contacted on an electronic connection structure including the first electronic component 150, the adhesive 160, and the second electronic component 140.
  • An interposer layer 130 including all or a part of components that are generated by high frequency is provided between the second electrode 100 and the second electronic component 150 to increase contamination and heat generation efficiency by the adhesive of the two electrodes. Can be.
  • the interposer layer 130 After aligning the second electronic component 140 on the adhesive 160, the interposer layer 130 is laminated on the second electronic component 140, and the second electrode 100 is contacted on the interposer layer 130.
  • the interposer layer 130 contacting the substrate of the second electronic component 150 and the adhesive 160 provided on the front surface of the component are heated according to the application of high frequency, and the pressure is applied to the second electrode 100.
  • the frequency range, output, and pressure of the high frequency applied according to the structure and thickness of the interposer layer 130, the second electronic component 140, the adhesive 160, and the first electronic component 150, and the kind of the material may be used. Can be changed freely. Therefore, the present invention which selectively heats only the interposer layer and the adhesive by using a high frequency has the advantage that the connection between parts can be achieved without thermal or mechanical damage without using a separate heating means.
  • the present invention also provides an electronic component connected according to the application of high frequency, the electronic component may be a flip chip or a chip-to-chip stack, a board-to-board connection structure, but the scope of the present invention is not limited thereto.
  • the present invention also provides an electronic component connected according to the application of high frequency, the electronic component may be a flip chip or a chip-to-chip stack, a board-to-board connection structure, but the scope of the present invention is not limited thereto.
  • the present invention provides an electronic component connecting apparatus using high frequency.
  • FIG 11 and 12 are schematic diagrams of an electronic component connecting apparatus according to an embodiment of the present invention.
  • the apparatus includes a stage S for supporting component alignment, component support, and applied pressure for connection between electronic components, a first electrode 110 provided on the stage S, and A second electrode 100 spaced apart from the first electrode 110 at a predetermined interval; And a high frequency generator 120 connected to the first electrode 110 and the second electrode 100.
  • the first electrode 110 and the second electrode 100 apply a high frequency to the electronic component located therebetween, thereby generating an adhesive agent located between the components. .
  • the electronic parts are mechanically bonded, and the electronic parts are also electrically connected.
  • the interposer layer 130 is positioned on the second electrode 110, and the interposer layer 130 may also generate heat due to the high frequency generated by the second electrode 110 (see FIG. 12). ).
  • the present invention is applied to equipment for connecting electronic components using high frequency electromagnetic fields.

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Abstract

The present invention relates to a method and apparatus for connecting an electronic component using a high frequency electromagnetic field. The method according to one embodiment of the present invention is characterized in that it comprises a step of applying a high frequency to an adhesive provided on an electronic component to be connected so as to heat the adhesive and electrically and mechanically connect the electronic component, and the method for connecting the electronic component according to the present invention involves using high-frequency electromagnetic waves so as to heat a certain ingredient contained in an interposer and/or a polymer adhesive. By not using an external heat source, components can be connected at low temperatures, which is economical. Further, compared to an ultrasonic connection technique that vibrates an entire connecting structure, the method of the present invention, which heats a certain ingredient having chemical dipoles by means of a high-frequency electromagnetic field, exhibits no process limitations caused by external vibration. Moreover, unlike an ultrasonic technique using a fixed vibrator, frequency modulation performed by a user according to fixed conditions is easy so that components can be connected under various conditions according to the material types thereof.

Description

고주파 전자기장을 이용한 전자부품 접속방법 및 장치Method and device for connecting electronic components using high frequency electromagnetic field
본 발명은 고주파 전자기장을 이용한 전자부품 접속방법 및 장치에 관한 것으로, 보다 상세하게는, 외부의 열원을 사용하지 않으므로, 저온에서 폴리머 접착제를 이용하여 부품간 전기적, 기계적 접속이 가능하고, 또한, 접착구조 전체를 진동시키는 초음파 접속방식에 비하여, 화학적 쌍극자를 가지는 특정 성분 등을 고주파의 전자기장으로 발열시킴으로, 접착구조 전체에 전해지는 외부 물리적 진동이 없이 전기적, 기계적 접합이 가능한 고주파 전자기장을 이용한 전자부품 접속방법 및 장치에 관한 것이다.The present invention relates to a method and apparatus for connecting electronic components using a high frequency electromagnetic field. More specifically, since no external heat source is used, electrical and mechanical connection between components is possible at low temperature using a polymer adhesive, and furthermore, Compared to the ultrasonic connection method that vibrates the entire structure, it generates heat of specific components having chemical dipoles with high-frequency electromagnetic fields, and connects electronic components using high-frequency electromagnetic fields that can be electrically and mechanically bonded without external physical vibration transmitted to the entire adhesive structure. A method and apparatus are disclosed.
경박단소화, 고성능, 고집적화, 환경친화적 반도체 패키지 기술의 시대적 부응에 따라 전자 부품간의 접속 방법 중 접착제를 이용한 기술의 중요성이 부각되고 있다. 일반적인 솔더 접합, 금선 접속, 소켓타입의 기판간 연결 등의 기술에 비해 저가의 간단한 공정을 제공하며 극미세의 전극 피치가 가능하고 리드 프리(lead free), 환경친화적인 플럭스리스(fluxless) 공정, 저온 공정 등의 장점을 가지는 접착제를 이용한 접속 기술개발이 진행되고 있다. The importance of technology using adhesives among the connection methods between electronic components is increasing with the age of light and thin, high performance, high integration, and environmentally friendly semiconductor package technology. Compared to the general solder bonding, gold wire connection, socket type board-to-board connection, etc., it provides a simple and inexpensive process, enables extremely fine electrode pitch, lead-free, environmentally friendly fluxless process, The development of the connection technology using the adhesive which has the advantage of low temperature process, etc. is progressing.
전자 패키지용 접합재료로서의 접착제는 크게 등방성 전도성 접착제(ICA; Isotropic Conductive Adhesive), 이방성 전도성 접착제 (ACA; Anisotropic Conductive Adhesive), 비전도성 접착제(NCA; Non-conductive Adhesive) 등의 형태가 있다. 대개 도전성 금속입자와 절연 및 접착력을 갖는 폴리머 수지로 구성된 일종의 복합 재료이며, 도전입자의 함량에 따라 NCA 또는 ACA에서 ICA로의 변이가 일어난다. 이러한 전기적 변이가 일어나는 도전성 입자의 함량치를 퍼콜레이션 문턱값(percolation threshold)이라고 한다. 즉, 도전성 입자가 전혀 없는 접착제는 NCA이며, 퍼콜레이션 문턱값보다 적은 함량을 가지면 ACA가 되며, 그 이상이 되면 재료의 자체만으로 통전성을 가지는 ICA가 되는 것이다. 각각의 특성상 전자부품 패키지 접합재료용으로서의 목적과 기능, 적용분야도 각각 상이하다.Adhesives as bonding materials for electronic packages are largely in the form of an isotropic conductive adhesive (ICA), anisotropic conductive adhesive (ACA), and non-conductive adhesive (NCA). It is a kind of composite material which is usually composed of conductive metal particles and polymer resin having insulation and adhesion, and the transition from NCA or ACA to ICA occurs depending on the content of the conductive particles. The content value of the conductive particles in which such electrical variation occurs is called a percolation threshold. In other words, the adhesive without any conductive particles is NCA, and if the content is less than the percolation threshold, the adhesive becomes ACA. If the adhesive becomes more than that, the adhesive becomes ICA having electricity. In terms of their characteristics, the purpose, function, and field of application for electronic component package bonding materials are also different.
등방성 전도성 접착제, 즉 ICA의 비솔더 플립 칩 패키지 접합 재료로서의 적용예는 도 1과 같다. 도 1을 참조하면 반도체칩에 형성된 금 스터드 범프나 금 도금 범프, 그리고 무전해 니켈/금 범프와 같은 비솔더 범프 위에 ICA를 도포한 뒤 비솔더 범프와 기판 전극간의 정렬을 수행한다. 이후 열을 가해 ICA가 경화되어 비솔더 범프와 기판 전극간 전기적 접속이 이루어진다. 이때 가열하는 온도는 ICA 경화 조건에 따라 다르지만 대개 180℃에서 10 ~ 30분 사이에 이루어진다. 그 후 플립 칩 패키지의 신뢰성 향상을 위해 칩과 기판 사이에 언더필 공정을 수행한다.An example of application of an isotropic conductive adhesive, i.e., a non-solder flip chip package bonding material, is shown in FIG. Referring to FIG. 1, ICA is applied onto a non-solder bump such as a gold stud bump, a gold plating bump, and an electroless nickel / gold bump formed on a semiconductor chip, and then alignment between the non-solder bump and the substrate electrode is performed. Heat is then applied to cure the ICA to make electrical connections between the nonsolder bumps and the substrate electrodes. At this time, the heating temperature depends on the ICA curing conditions, but usually takes 10 to 30 minutes at 180 ℃. An underfill process is then performed between the chip and the substrate to improve the reliability of the flip chip package.
이방성 전도성 필름(ACF)은 막의 두께 방향으로는 도전성, 면방향으로는 절연성이라는 전기 이방성 및 접착성을 갖는 고분자막으로, 기본적으로 니켈, 금/폴리머, 은 등의 도전성 입자들과 열경화성, 열가소성의 절연수지로 구성되어 있다. 이를 이용한 실장방법으로는 칩 또는 칩이 실장된 연성 기판(flexible circuit substrate)과 글라스 또는 경성 기판 (Rigid Substrate) 사이에서 상부 및 하부 전극 간에 위치하면서 열과 압력을 동시에 받아 ACF 내 분산된 도전입자가 상부 및 하부 전극 사이에 기계적으로 접촉되어 형성된 전기적 연결에 의해 통전이 이루어지는 방식이다. (도 2) 이 때 가해진 열에 의해 절연수지의 경화가 일어나서 강한 접착력을 갖게 된다. 저가의 접착제 제조공정과 이러한 접착제를 이용한 저가의 플립 칩 공정개발을 위하여 경화가 빠른 열경화성 에폭시 수지 또는 아크릴계 수지를 이용한 ACF도 상품화가 되었다. ACA도 필름 형태(Anisotropic Conductive Film; ACF)와 페이스트(Anisotropic Conductive Paste; ACP) 형태로 구분할 수 있으며, 접속공정과 접착제의 제조공정의 간편성을 위해 최근 페이스트 형태의 접착제가 개발되고 있다. 또 초극미세피치 접속 및 저가격화를 위해 도전입자를 제거한 비전도성 필름(Non-conductive Film; NCF)도 있으며, 역시 페이스트 제품인 NCP도 있다. Anisotropic conductive film (ACF) is a polymer film having electrical anisotropy and adhesiveness, which is conductive in the thickness direction of the film and insulating in the surface direction, and basically insulates conductive particles such as nickel, gold / polymer, and silver, and thermosetting and thermoplastic insulation. It consists of resin. In the mounting method using the same, the conductive particles dispersed in the ACF are placed between the upper and lower electrodes between the flexible circuit substrate on which the chip or the chip is mounted and the glass or rigid substrate and are simultaneously subjected to heat and pressure. And an electrical connection by electrical connection formed by mechanical contact between the lower electrodes. (2) The heat applied at this time causes the curing of the insulating resin, resulting in a strong adhesive force. In order to develop a low cost adhesive manufacturing process and a low cost flip chip process using such an adhesive, ACF using a fast curing thermosetting epoxy resin or an acrylic resin has also been commercialized. ACA can also be classified into anisotropic conductive film (ACF) and paste (Anisotropic Conductive Paste (ACP)), and paste-type adhesives have recently been developed for simplicity of the connecting process and the adhesive manufacturing process. There are also non-conductive films (NCFs) from which conductive particles are removed for ultra-fine pitch connection and low cost, and NCP, which is also a paste product.
도 3은 NCF, NCP를 접합 재료로 사용한 플립 칩 접속 공정을 나타낸다. 먼저 NCF나 NCP를 기판 전극 주위에 도포하고 비솔더 범프 중 특히 금 스터드 범프가 형성된 칩과 정렬한 뒤 열압착공정에 의해 비솔더 범프와 기판 전극간 직접적인 접촉이 일어나게 하면서 가해진 열에 의해 NCA가 경화가 되는 접합 기구이다.3 shows a flip chip connection process using NCF and NCP as the bonding material. First, NCF or NCP is applied around the substrate electrode and aligned with the chip where the gold stud bump is formed, among the non-solder bumps, and then the NCA is cured by the heat applied while making direct contact between the non-solder bump and the substrate electrode by the thermocompression process. It is a joining mechanism.
상기 ICA, ACA (ACF, ACP), NCA (NCF, NCP) 등의 접합재료는 LCD, PDP, OLED 등의 평판디스플레이 모듈 실장과 전자부품의 표면 실장, 그리고 반도체 플립 칩 접속에 쓰이는 접합재료로서, 이미 평판디스플레이 모듈 실장 부분에서 OLB(Out Lead Bonding), PCB, COG(Chip-On-Glass), COF(Chip-On-Film) 공정에 활발히 사용되고 있고, 비솔더 플립 칩 공정 및 표면 부품 실장 기술에 그 시장 범위를 확대적용하고 있다.The bonding materials of the ICA, ACA (ACF, ACP), NCA (NCF, NCP), etc. are bonding materials used for flat panel display module mounting such as LCD, PDP, OLED, surface mounting of electronic components, and semiconductor flip chip connection. It is already actively used in out lead bonding, PCB, chip-on-glass (COG), and chip-on-film (COF) processes in flat panel display module mounting, and is used in non-solder flip chip process and surface component mounting technology. It is expanding its market range.
ICA의 경우, 전기 및 전자부품이나 회로 배선 조립을 위해 접합에 사용되는 기존의 솔더링을 대체할 수 있는 재료로서 그 적용범위 또한 솔더링의 접속 부분과 유사하다. 즉, 솔더 리플로우가 필요한 표면 실장 부품 조립이나 솔더를 이용한 플립 칩 접속에 활용가능하며, 솔더링 리플로우 공정 온도보다 낮은 온도에서 ICA의 열경화에 의해 접합을 이룰 수 있으나 이 역시 공정 온도가 높고 경화시간이 길다는 단점이 발생한다.In the case of ICA, it is a material that can replace the existing soldering used for bonding for assembly of electrical and electronic components or circuit wiring, and its scope of application is similar to that of soldering. In other words, it can be used for assembling surface mount components requiring solder reflow or flip chip connection using solder, and bonding can be achieved by thermal curing of ICA at a temperature lower than the soldering reflow process temperature, but this also has a high process temperature and hardening. The disadvantage is that the time is long.
ACA의 경우, 디스플레이 모듈 실장에 활발히 사용되어 왔다. 연성 기판을 글라스 기판에 접속할 때 사용되는 OLB 본딩, 연성 기판을 PCB 기판과 접합하는 PCB 본딩용 ACF의 시장이 가장 크며 적용범위에 따라 도전입자의 종류가 달라지고 접속온도와 시간 또한 점점 낮아지면서 빨라지는 저온속경화형을 필요로 하고 있다. 또 구동회로 IC 칩이 글라스 기판에 직접 접속되는 COG 본딩, 연성 기판에 직접 플립 칩 접속되는 COF 본딩은 구동회로 IC의 고밀도화, 복잡화 되면서 극미세피치 접속의 필요성이 더욱 대두되고 있다. 따라서 ACF의 극미세피치 접속 및 저온속경화형 접속 공정이 필요한 상황은 앞으로 지속될 전망이다. 또 디스플레이 모듈 실장 외에 범용의 연성 기판과 경성 기판과의 실장에서도 소켓이나 납땜 솔더링의 극미세피치 접속능력 및 디자인 자율성, 접속 면적 및 높이 감소 요구에 따라 ACF 접속으로 활발히 대체되고 있는 상황이다. 기존의 솔더를 이용한 플립 칩 접속 대신 비솔더 플립 칩 공정의 장점이 부각되면서 그 활용도를 높여가고 있고 ACA의 대체재료로서 NCA가 급부상하고 있다. 비솔더 플립 칩 공정에 사용되는 비솔더 범프로서는 금 스터드 범프나 금 도금범프, 무전해 니켈, 구리 범프 등이 있으며, 이 경우 높은 용융점 때문에 리플로우에 의한 플립 칩 접속이 불가능하므로 ACF에 의한 열압착공정에 의해 플립 칩 접속 공정을 수행하고 있다. In the case of ACA, display modules have been actively used. OLB bonding used for connecting flexible substrates to glass substrates, and ACF for PCB bonding for bonding flexible substrates to PCB substrates is the largest market, and the types of conductive particles vary depending on the scope of application. Needs a low temperature hardening type. In addition, COG bonding in which a driving circuit IC chip is directly connected to a glass substrate, and COF bonding in which a flip chip is directly connected to a flexible substrate are becoming more dense and complicated, leading to the necessity of extremely fine pitch connection. Therefore, the situation where ACF's ultra-pitch connection and low temperature hardening connection process are required will continue. In addition to mounting display modules, general-purpose flexible boards and rigid boards are also being actively replaced by ACF connections due to the demand for ultra-pitch connection capability, design autonomy, connection area, and height reduction of sockets and solder soldering. As the advantages of the non-solder flip chip process instead of the conventional solder flip chip connection are highlighted, the utilization is increasing, and NCA is rapidly emerging as a substitute material for ACA. Non-solder bumps used in the non-solder flip chip process include gold stud bumps, gold plated bumps, electroless nickel and copper bumps.In this case, high melting point prevents flip chip connection due to reflow, which is why thermocompression bonding by ACF is required. The flip chip connection process is performed by the process.
그러나 ACF를 사용한 OLB, PCB, COG, COF, Flex-to-Rigid 접속 공정, 플립 칩 공정 기술은 기본적으로 열압착공정에 의한 도전입자와 전극 패드, 비솔더 범프와의 기계적 접촉과, 주변 폴리머 수지의 열경화에 의한 접속 공정이다. 이에 따라 접속 압력을 가하는 문제, 폴리머 수지의 균일한 열경화 문제, 빠른 열경화 거동을 얻기 위한 높은 공정 온도와 이에 따른 패키지의 열변형 문제, 그리고 기판 평탄도 문제 등의 여러 가지 문제점이 해결되어야 한다. 특히 공정 압력에 비교적 취약한 화합물 반도체 칩이나 실리콘 칩이라 하더라도 두께가 얇은 칩의 경우 발생하는 본딩 압력의 한계는 ACF 접속기술을 적용하기에 큰 어려움이 있다. 이러한 문제를 해결하기 위하여, 일본특허출원 2000-349304 등은 초음파를 이용한 플립 칩 실장방법을 개시한다. 하지만, 이 경우 초음파인 외부 진동을 접합구조 내의 접합재료에 전달 및 진동시켜 열 에너지를 얻는 방식에서 전자 패키지 구조가 물리적으로 진동하므로 복잡한 패키지 구조에서는 공정 변수의 제약이 있을 수 있다. 아울러, 초음파 발생장치의 외부진동자가 가지는 고유 진동수를 변경, 조절하기 어렵다는 문제가 있다.However, OLB, PCB, COG, COF, Flex-to-Rigid connection process and flip chip process technology using ACF are basically based on the mechanical contact between conductive particles, electrode pads, and non-solder bumps by the thermocompression process, and the surrounding polymer resin. It is a connection process by thermosetting. Accordingly, various problems such as application of connection pressure, uniform thermal curing of the polymer resin, high process temperature and consequently thermal deformation of the package to obtain rapid thermal curing behavior, and substrate flatness should be solved. . In particular, even in the case of a compound semiconductor chip or a silicon chip, which is relatively vulnerable to process pressure, the limitation of the bonding pressure generated in the case of a thin chip has a great difficulty in applying the ACF connection technology. To solve this problem, Japanese Patent Application No. 2000-349304 and the like disclose a flip chip mounting method using ultrasonic waves. However, in this case, since the electronic package structure physically vibrates in a manner of transmitting and vibrating ultrasonic external vibration to the bonding material in the bonding structure to obtain thermal energy, there may be a limitation of process variables in the complex package structure. In addition, there is a problem that it is difficult to change and adjust the natural frequency of the external vibrator of the ultrasonic generator.
따라서, 본 발명이 해결하려는 과제는 폴리머 접착재료를 사용하여 전자부품을 전기적, 기계적으로 접속 시 발생하는 열, 기계적 손상을 최소화하면서 외부 열원으로부터의 열 공급 없이 플립 칩, 기판과 같은 전자부품을 효과적으로 접속시킬 수 있는 방법 및 장치를 제공하는 것이다. Accordingly, an object of the present invention is to minimize the heat and mechanical damage generated when the electronic component is electrically and mechanically connected using a polymer adhesive material, while effectively supplying an electronic component such as a flip chip or a substrate without supplying heat from an external heat source. It is to provide a method and apparatus that can be connected.
상기 과제를 해결하기 위하여, 본 발명은 고주파를 이용한 전자부품 접속 방법으로, 상기 방법은 접속시키고자 하는 전자부품에 구비된 접착제에 고주파를 인가하여 자체적으로 발열시킴으로 전기적 및 기계적으로 접합시키는 단계를 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법을 제공한다. In order to solve the above problems, the present invention is a method of connecting electronic components using high frequency, the method includes the step of electrically and mechanically bonding by applying a high frequency to the adhesive provided in the electronic component to be connected to generate heat by itself An electronic component connecting method using a high frequency is provided.
본 발명의 일 실시예에서 상기 인가되는 고주파는 상기 전자부품과 접촉하는 인터포저(interposer)층을 발열시키며, 상기 인터포저층은 상기 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함한다.  In one embodiment of the present invention, the applied high frequency heats an interposer layer in contact with the electronic component, and the interposer layer is a component having a characteristic of having a chemical dipole vibrating by the applied high frequency metal. And any one or two or more selected from the group consisting of ferromagnetic material.
본 발명의 일 실시예에서 상기 화학적 쌍극자를 가지는 특성의 성분은 폴링스케일 전기음성도 차이가 0.3 이상인 극성 결합을 하나 또는 두 개 이상 포함하는 화합물을 포함한다.  In an embodiment of the present invention, the component having the chemical dipole includes a compound including one or two or more polar bonds having a polling scale electronegativity difference of 0.3 or more.
본 발명의 일 실시예에서, 또한, 상기 접착제는 폴리머 접착제이며, 상기 폴리머 접착제는 인가되는 상기 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함하며, 이때 상기 화학적 쌍극자를 가지는 특성의 성분은 폴링스케일 전기음성도 차이가 0.3 이상인 극성 결합을 하나 또는 두 개 이상 포함하는 화합물을 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법을 제공한다.  In one embodiment of the present invention, the adhesive is also a polymer adhesive, wherein the polymer adhesive is any one or two selected from the group consisting of a component, a metal and a ferromagnetic material having a characteristic characteristic of having a chemical dipole vibrated by the high frequency applied thereto. Wherein the component having the chemical dipole includes a compound including one or two or more polar bonds having a difference in the polling scale electronegativity of 0.3 or more. to provide.
상기 또 다른 과제를 해결하기 위하여, 본 발명은 제 1 전극상에 제 1 전자부품을 적치하는 단계; 상기 제 1 전자부품상에 접착제를 위치시키고, 상기 제 1 전자부품과 접속되는 제 2 전자부품을 정렬시키는 단계; 상기 제 2 전자부품에 제 2 전극을 접촉시키는 단계; 및 상기 제 1 전극과 제 2 전극을 통하여 상기 접착제에 고주파를 인가하여, 상기 접착제를 발열시키는 단계를 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법을 제공한다.  In order to solve the another object, the present invention comprises the steps of: depositing a first electronic component on the first electrode; Placing an adhesive on the first electronic component and aligning a second electronic component to be connected with the first electronic component; Contacting a second electrode with the second electronic component; And applying a high frequency to the adhesive through the first electrode and the second electrode to generate the adhesive, thereby providing an electronic component connecting method using the high frequency.
본 발명의 일 실시예에서, 상기 제 2 전극과 상기 제 2 전자부품 사이에는 인터포저층이 구비되며, 상기 제 2 전극으로부터 발생하는 고주파는 상기 인터포저층을 발열시킨다. 또한, 상기 인터포저층은 상기 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나를 포함한다.  In one embodiment of the present invention, an interposer layer is provided between the second electrode and the second electronic component, and the high frequency generated from the second electrode generates the interposer layer. In addition, the interposer layer includes any one selected from the group consisting of a metal, a ferromagnetic material, and a component having a characteristic property of having a chemical dipole vibrated by the applied high frequency wave.
본 발명의 또 다른 일 실시예에서, 상기 접착제는 상기 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함하며, 본 발명은 상술한 방법에 의하여 기판에 접속된 전자부품을 제공한다. In another embodiment of the present invention, the adhesive includes any one or two or more selected from the group consisting of a component, a metal and a ferromagnetic material having a characteristic property of having a chemical dipole vibrated by the applied high frequency, the present invention An electronic component connected to a substrate is provided by the method described above.
상기 또 다른 과제를 해결하기 위하여, 본 발명은 고주파를 이용한 전자부품 접속장치로서, 상기 장치는 스테이지; 상기 스테이지 상에 구비된 제 1 전극; 상기 제 1 전극과 소정 간격으로 이격된 제 2 전극; 및 상기 제 1 전극과 제 2 전극에 연결된 고주파 발생장치를 포함하며, 여기에서 상기 장치는 상기 제 1 전극과 제 2 전극 사이에 구비되는 전자부품에 고주파를 인가하여 상기 전자부품을 접속시키는 것을 특징으로 하는 고주파를 이용한 전자부품 접속장치를 제공한다. In order to solve the above another problem, the present invention provides an electronic component connecting apparatus using a high frequency, the apparatus comprising: a stage; A first electrode provided on the stage; A second electrode spaced apart from the first electrode at a predetermined interval; And a high frequency generator connected to the first electrode and the second electrode, wherein the device connects the electronic component by applying a high frequency to the electronic component provided between the first electrode and the second electrode. An electronic component connecting apparatus using high frequency is provided.
본 발명의 일 실시예에서 상기 제 2 전극에는 인터포저층이 구비되며, 여기에서 인터포저층은 상기 전자부품과 접촉하며, 상기 인가되는 고주파에 의하여 발열된다.In one embodiment of the present invention, the second electrode is provided with an interposer layer, wherein the interposer layer is in contact with the electronic component and is generated by the high frequency applied.
본 발명에 따른 전자부품 접속방법은 고주파의 전자기파를 이용하여 인터포저 및/또는 폴리머 접착제에 함유된 특정 성분을 발열시킨다. 외부의 열원을 사용하지 않으므로, 저온에서 부품간 접속이 가능하고, 경제적이다. 또한, 접합구조 전체를 진동시키는 초음파 접속방식에 비하여, 화학적 쌍극자를 가지는 특정 성분 등을 고주파의 전자기장으로 발열시키는 본 발명은 외부 진동에 따른 공정 제약이 없다. 아울러, 고정된 진동자를 사용하는 초음파 방식과 달리, 사용자가 공정 조건에 따라 주파수 변조가 용이하므로, 물질 종류에 따라 다양한 조건으로 부품간 접속을 진행할 수 있다.  The electronic component connecting method according to the present invention generates a specific component contained in the interposer and / or the polymer adhesive using high frequency electromagnetic waves. Since no external heat source is used, connection between parts is possible at low temperature and economical. In addition, the present invention, which generates a specific component having a chemical dipole and the like with a high frequency electromagnetic field, has no process constraints due to external vibration, as compared with an ultrasonic connection method for vibrating the entire bonded structure. In addition, unlike the ultrasonic method using a fixed oscillator, since the user is easy to modulate the frequency according to the process conditions, it is possible to proceed with the connection between the parts under various conditions depending on the type of material.
도 1은 등방성 전도성 접착제, 즉 ICA의 비솔더 플립 칩 패키지 접합 재료로서의 적용예를 설명하는 도면이다.1 is a diagram illustrating an application example of an isotropic conductive adhesive, ie, a non-solder flip chip package bonding material of ICA.
도 2는 ACF 내 분산된 도전입자가 상부 및 하부 전극 사이에 기계적으로 접촉되어 형성된 전기적 연결에 의해 통전이 이루어지는 방식을 설명하는 도면이다.FIG. 2 is a view illustrating a method of conducting electricity by electrical connection formed by mechanically contacting conductive particles dispersed in an ACF between upper and lower electrodes.
도 3은 NCF, NCP를 접합 재료로 사용한 플립 칩 접속 공정을 나타내는 도면이다.It is a figure which shows the flip chip connection process which used NCF and NCP as a bonding material.
도 4는 본 발명에 따른 전자부품 접속방법의 단계도이다.4 is a step diagram of an electronic component connecting method according to the present invention.
도 5는 본 발명의 일 실시예에 따른 전자부품 접속 방식을 설명하는 도면이다.5 is a view illustrating an electronic component connection method according to an embodiment of the present invention.
도 6은 이방 전도성 접착제가 사용된 부품 접속방법을 설명하는 도면이다.It is a figure explaining the component connection method using the anisotropic conductive adhesive.
도 7 은 본 발명의 일 실시예에 따른 전자부품 접속방법의 단계도이고, 도 8 내지 10은 본 발명의 일 실시예에 따른 전자부품 접속방법의 단계별 모식도이다.7 is a step diagram of an electronic component connecting method according to an embodiment of the present invention, and FIGS. 8 to 10 are step-by-step schematic diagrams of an electronic component connecting method according to an embodiment of the present invention.
도 11 및 12는 본 발명의 일 실시예에 따른 전자부품 접속장치의 모식도이다.11 and 12 are schematic diagrams of an electronic component connecting apparatus according to an embodiment of the present invention.
이하, 본 발명을 도면을 참조하여 상세하게 설명하고자 한다. 다음에 소개되는 실시예들은 당 업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 예로서 제공되는 것이다. 따라서 본 발명은 이하 설명된 실시예들에 한정되지 않고 다른 형태로 구체화될 수도 있다. 그리고 도면들에 있어서, 구성요소의 폭, 길이, 두께 등은 편의를 위하여 과장되어 표현될 수도 있다. 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다.Hereinafter, the present invention will be described in detail with reference to the drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention is fully conveyed to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
본 발명은 상술한 종래 기술의 문제를 해결하기 위하여, 고주파의 전자기장을 이용하여, 전자부품간 접속, 접합을 유도한다. 즉, 본 발명은 접속시키고자 하는 전자부품을 정렬한 후, 부품과 접촉하는 접착제에 발열 성분에 따라 각기 다른, 수 kHz 이상의 주파수를 갖는 고주파 전자기장(고주파)을, 또는 상기 고주파와 압력을 인가하여, 접착제를 발열시킨다(도 4 참조).In order to solve the above-mentioned problems of the prior art, the present invention induces connection and bonding between electronic components by using a high frequency electromagnetic field. That is, the present invention aligns the electronic components to be connected, and then applies a high frequency electromagnetic field (high frequency) having a frequency of several kHz or more, or the high frequency and pressure, to the adhesive which comes into contact with the components, depending on the heat generating components. , The adhesive is exothermic (see FIG. 4).
따라서, 본 발명에서 상기 접착제는 고주파에 의하여 발열이 가능한 성분을 하나 이상 포함하는 것이 바람직하다. 예를 들여, 상기 접착제는 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 또는 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함할 수 있다. 여기에서 화학적 쌍극자를 가지는 성분은 폴링스케일 전기음성도 차이가 0.3 이상인 극성 결합을 하나 또는 두 개 이상 포함하는 화합물이다. Therefore, in the present invention, the adhesive preferably includes at least one component capable of generating heat by high frequency. For example, the adhesive may include any one or two or more selected from the group consisting of a component, a metal, or a ferromagnetic material having a characteristic chemical dipole vibrating by an applied high frequency. Herein, the component having a chemical dipole is a compound including one or two or more polar bonds having a polling scale electronegativity difference of 0.3 or more.
본 발명의 또 다른 일 실시예는 전자부품과 고주파 전극 사이에 구비되는 별도의 절연체 층인 인터포저(interposer)층과 부품 사이에 구비되는 접착제를 고주파 인가로 동시에 발열시킨다. 따라서, 본 발명에 따른 고주파 인가에 의하여 발열되는 층은 상부 부품의 양면에 구비되는 두 개의 층(즉, 인터포저층과 그 반대의 접착제층)이 된다.According to another embodiment of the present invention, an interposer layer, which is a separate insulator layer provided between the electronic component and the high frequency electrode, and simultaneously generates heat by applying high frequency to the adhesive provided between the component. Accordingly, the layer generated by high frequency application according to the present invention becomes two layers (i.e., interposer layer and vice versa adhesive layer) provided on both sides of the upper part.
도 5는 본 발명의 일 실시예에 따른 전자부품 접속 방식을 설명하는 도면이다.5 is a view illustrating an electronic component connection method according to an embodiment of the present invention.
도 5를 참조하면, 사용자에 의하여 주파수를 변조시킬 수 있는 고주파 발생기(120)가, 서로 대향하며, 이격된 2개의 전극(100, 110)에 연결된다. 상기 2 개의 전극 중 제 1 전극(110)은 스테이지(S)상에 구비되어, 부품 접속을 위하여 아래로 가해지는 힘을 지탱하게 된다. 접속시키고자 하는 제 1 전자부품과 제 2 전자부품(140, 150)은 제 1 전극(110)과 제 2 전극(100)사이에 구비되며, 상기 두 전자부품(140, 150) 사이에는 접착제가 구비된다. 또한, 제 2 전자부품(140)과 고주파를 인가하기 위한 전극(100)사이에는 접착제에 의한 전극 오염을 방지함과 동시에, 인가되는 고주파에 의하여 발열되는 절연체 층인 인터포저층(130)이 구비 됨으로써 공정의 효율을 높일 수 있다. Referring to FIG. 5, a high frequency generator 120 capable of modulating a frequency by a user is connected to two electrodes 100 and 110 facing each other and spaced apart from each other. The first electrode 110 of the two electrodes is provided on the stage (S) to support the force applied downward for the component connection. The first electronic component and the second electronic component 140 and 150 to be connected are provided between the first electrode 110 and the second electrode 100, and an adhesive is formed between the two electronic components 140 and 150. It is provided. In addition, between the second electronic component 140 and the electrode 100 for applying a high frequency, an interposer layer 130, which is an insulator layer generated by high frequency applied and prevents electrode contamination by an adhesive, is provided. The efficiency of the process can be increased.
이와 같이 전자부품에 인가되는 고주파 전자기장에 의하여 상기 인터포저층(130)과 접착체(160)를 동시에 발열시키는 경우, 부품의 두께와 상관없이 접착제를 경화시킬 수 있으며, 균일한 접착력을 얻을 수 있다. 상기 절연체층인 인터포저층(130) 또한 고주파에 의한 발열 효율을 높이기 위하여, 전극을 통하여 인가되는 고주파에 의하여 발열되는 성분, 예를 들면 화학적 쌍극자를 가지는 특성의 성분, 금속 또는 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함하는 것이 바람직하다. As such, when the interposer layer 130 and the adhesive body 160 are simultaneously generated by a high frequency electromagnetic field applied to the electronic component, the adhesive may be cured regardless of the thickness of the component, and uniform adhesive force may be obtained. . The interposer layer 130, which is the insulator layer, is also selected from the group consisting of metal, ferromagnetic material, or component having heat generated by high frequency applied through an electrode, for example, a chemical dipole, in order to increase heat generation efficiency due to high frequency. It is preferable to include any one or two or more selected.
상기 인터포저층(130)이 화학적 쌍극자를 가지는 화합물을 구성성분으로 포함한 경우, 인가되는 고주파에 의하여 상기 인터포저층(130)의 전부 또는 일정 성분이 진동하며, 이러한 분자단위 진동에 따라 인터포저층(130)은 발열된다. 또한, 인터포저층(130)에 금속 첨가물이 포함된 경우, 인가되는 고주파에 의하여 금속 첨가물 내에 유도 전류가 흐르게 되고, 이에 의한 줄열(joule heat)이 인터포저층(130)에 함유된 금속 첨가물 내에서 발생, 인터포저층(130)이 발열된다. 또한, 상기 인터포저층(130)에 강자성체 첨가물이 포함된 경우, 인가되는 고주파 전자기장에 의하여 반복적으로 강자성체의 결정구조가 변형되는 히스테리시스 (hysteresis) 에 의해 전자기 에너지가 열 에너지로 바뀌어 인터포저층(130)이 발열된다. 이로써, 본 발명에 따르면, 외부로부터의 가열이나, 물리적 진동 없이도, 저온에서도 전자부품간 접속이 가능하다. When the interposer layer 130 contains a compound having a chemical dipole as a component, all or a predetermined component of the interposer layer 130 vibrates by an applied high frequency, and the interposer layer is caused by the molecular unit vibration. 130 generates heat. In addition, when the metal additive is included in the interposer layer 130, an induced current flows in the metal additive due to the applied high frequency, and thus joule heat is generated in the metal additive contained in the interposer layer 130. In this case, the interposer layer 130 is heated. In addition, when the interposer layer 130 includes ferromagnetic additives, the electromagnetic energy is converted into thermal energy by hysteresis in which the crystal structure of the ferromagnetic material is repeatedly deformed by an applied high frequency electromagnetic field. ) Is heated. Thus, according to the present invention, the electronic components can be connected at low temperatures without heating from the outside or physical vibration.
더 나아가, 본 발명에 따른 부품 접속 방법은 고주파 인가를 위한 전극 사이에 접착제를 위치시키고, 상기 접착제 또한 인터포저층과 동일한 방식으로 발열시키는 기술구성을 제공한다. 따라서, 상기 접착제는 상기 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 또는 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함하는 것이 바람직하며, 그 형태는 혼합 수지, 구립체 또는 섬유 형태일 수 있다. Furthermore, the component connecting method according to the present invention provides a technical configuration in which an adhesive is placed between electrodes for high frequency application, and the adhesive also generates heat in the same manner as the interposer layer. Therefore, it is preferable that the adhesive contains any one or two or more selected from the group consisting of a component, a metal, or a ferromagnetic material having a chemical dipole vibrating by the applied high frequency, and the form thereof is a mixed resin or a granular body. Or in the form of fibers.
도 6은 이방 전도성 접착제가 사용된 부품 접속방법을 설명하는 도면이다.It is a figure explaining the component connection method using the anisotropic conductive adhesive.
도 6을 참조하면, 접착제(160) 내에는 전도성 입자(161)가 구비되는데, 상기 전도성 입자(161)가 고주파에 의하여 발열되는 경우, 고주파에 의한 열 발생 효과를 기대할 수 있다. Referring to FIG. 6, the conductive particles 161 are provided in the adhesive 160. When the conductive particles 161 generate heat by high frequency, heat generation effects due to high frequency may be expected.
도 7 은 본 발명의 일 실시예에 따른 전자부품 접속방법의 단계도이고, 도 8 내지 10은 본 발명의 일 실시예에 따른 전자부품 접속방법의 단계별 모식도이다.7 is a step diagram of an electronic component connecting method according to an embodiment of the present invention, and FIGS. 8 to 10 are step-by-step schematic diagrams of an electronic component connecting method according to an embodiment of the present invention.
도 8을 참조하면, 제 1 전극(110)상에 플립 칩과 같은 전자부품이 접속되어야 하는 기판이나 칩인 제 1 전자부품(150)이 적치된다. 이후, 제 1 전자부품(150)상에 접착제(160)를 위치시키고, 또 다른 제 2 전자부품(140)을 상기 제 2 전자부품(150)에 대응하여 정렬시킨다. 상기 전자부품은 칩, 기판 등일 수 있으며, 상기 접착제(160) 또한 이방성 전도성 접착제 또는 비전도성 접착제일 수 있다. Referring to FIG. 8, a first electronic component 150, which is a substrate or a chip to which an electronic component such as a flip chip is to be connected, is deposited on the first electrode 110. Subsequently, the adhesive 160 is positioned on the first electronic component 150, and another second electronic component 140 is aligned with the second electronic component 150. The electronic component may be a chip, a substrate, or the like, and the adhesive 160 may also be an anisotropic conductive adhesive or nonconductive adhesive.
도 9 를 참조하면, 상기 제 1 전자부품 (150), 접착제 (160) 및 제 2 전자 부품(140) 으로 구성된 전자 접속 구조 상에 고주파 인가를 위한 제 2 전극(100)을 접촉시키는데, 상기 제 2전극의 접착제에 의한 오염과 발열 효율을 높이기 위하여 상기 제 2 전극(100)과 제 2 전자부품(150) 사이에는 고주파에 의하여 발열되는 성분을 전부 또는 일부 포함하는 인터포저층(130)이 구비될 수 있다. 인터포저층(130)을 사용하는 경우, 제 2 전자 부품(140)을 접착제(160) 위에 정렬시킨 후, 인터포저층(130)을 상기 제 2 전자부품(140) 위에 적층하고, 제 2 전극(100)을 상기 인터포저층(130) 위에 접촉시킨다. Referring to FIG. 9, a second electrode 100 for high frequency application is contacted on an electronic connection structure including the first electronic component 150, the adhesive 160, and the second electronic component 140. An interposer layer 130 including all or a part of components that are generated by high frequency is provided between the second electrode 100 and the second electronic component 150 to increase contamination and heat generation efficiency by the adhesive of the two electrodes. Can be. When using the interposer layer 130, after aligning the second electronic component 140 on the adhesive 160, the interposer layer 130 is laminated on the second electronic component 140, and the second electrode 100 is contacted on the interposer layer 130.
도 10을 참조하면, 고주파의 인가에 따라 제 2 전자부품(150) 기판과 접하는 인터포저층(130)과 부품 전면에 구비된 접착제(160)가 발열되며, 상기 제 2 전극 (100)으로 압력이 인가될 수 있다. 또한, 인터포저층(130) 제 2 전자부품 (140), 접착제(160), 제1 전자부품 (150) 의 구조와 두께, 물질종류에 따라 인가되는 고주파의 주파수 범위와 출력, 그리고 압력이 사용자에 의하여 자유롭게 변경될 수 있다. 따라서, 고주파를 이용하여 인터포저층과 접착제만을 선택적으로 발열시키는 본 발명은 별도의 가열수단을 사용하지 않고서도 부품간 접속을 열, 기계적 손상 없이 달성할 수 있다는 장점이 있다. Referring to FIG. 10, the interposer layer 130 contacting the substrate of the second electronic component 150 and the adhesive 160 provided on the front surface of the component are heated according to the application of high frequency, and the pressure is applied to the second electrode 100. Can be applied. In addition, the frequency range, output, and pressure of the high frequency applied according to the structure and thickness of the interposer layer 130, the second electronic component 140, the adhesive 160, and the first electronic component 150, and the kind of the material may be used. Can be changed freely. Therefore, the present invention which selectively heats only the interposer layer and the adhesive by using a high frequency has the advantage that the connection between parts can be achieved without thermal or mechanical damage without using a separate heating means.
본 발명은 또한 고주파 인가에 따라 접속된 전자부품을 제공하며, 상기 전자부품은 플립 칩 또는 칩간 적층, 기판간 접속 구조 일 수 있으나, 본 발명의 범위는 이에 제한되지 않는다. The present invention also provides an electronic component connected according to the application of high frequency, the electronic component may be a flip chip or a chip-to-chip stack, a board-to-board connection structure, but the scope of the present invention is not limited thereto.
본 발명은 또한 고주파 인가에 따라 접속된 전자부품을 제공하며, 상기 전자부품은 플립 칩 또는 칩간 적층, 기판간 접속 구조 일 수 있으나, 본 발명의 범위는 이에 제한되지 않는다. The present invention also provides an electronic component connected according to the application of high frequency, the electronic component may be a flip chip or a chip-to-chip stack, a board-to-board connection structure, but the scope of the present invention is not limited thereto.
더 나아가, 본 발명은 고주파를 이용한 전자부품 접속장치를 제공한다.Furthermore, the present invention provides an electronic component connecting apparatus using high frequency.
도 11 및 12는 본 발명의 일 실시예에 따른 전자부품 접속장치의 모식도이다.11 and 12 are schematic diagrams of an electronic component connecting apparatus according to an embodiment of the present invention.
도 11을 참조하면, 상기 장치는 전자 부품간 접속을 위하여 부품 정렬, 부품 지지 및 인가되는 압력을 지탱하기 위한 스테이지(S), 상기 스테이지(S) 상에 구비된 제 1 전극(110), 상기 제 1 전극(110)과 소정 간격으로 이격된 제 2 전극(100); 및 상기 제 1 전극(110)과 제 2 전극(100)에 연결된 고주파 발생장치(120)를 포함한다. Referring to FIG. 11, the apparatus includes a stage S for supporting component alignment, component support, and applied pressure for connection between electronic components, a first electrode 110 provided on the stage S, and A second electrode 100 spaced apart from the first electrode 110 at a predetermined interval; And a high frequency generator 120 connected to the first electrode 110 and the second electrode 100.
본 발명의 일 실시예에 따르면, 상기 제 1 전극(110)과 제 2 전극(100)은 그 사이에 위치되는 전자부품에 대하여 고주파를 인가하게 되며, 이에 따라 부품 사이에 위치되는 접착제를 발열시킨다. 이로써, 전자부품들은 기계적으로 접합되고, 아울러 전자부품들은 전기적으로도 접합된다. According to an embodiment of the present invention, the first electrode 110 and the second electrode 100 apply a high frequency to the electronic component located therebetween, thereby generating an adhesive agent located between the components. . As a result, the electronic parts are mechanically bonded, and the electronic parts are also electrically connected.
또 다른 경우, 상기 제 2 전극(110)에는 인터포저층(130)이 위치되며, 상기 인터포저층(130) 또한 제 2 전극(110)에 의하여 발생한 고주파에 의하여 발열될 수 있다(도 12 참조). In another case, the interposer layer 130 is positioned on the second electrode 110, and the interposer layer 130 may also generate heat due to the high frequency generated by the second electrode 110 (see FIG. 12). ).
본 이상과 같이 본 발명은 비록 한정된 실시예와 도면에 의해 설명되었으나, 본 발명이 상기의 실시예에 한정되는 것은 아니며, 이는 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 따라서, 본 발명의 사상은 아래에 기재된 특허청구범위에 의해서만 파악되어야 하고, 이와 균등하거나 또는 등가적인 변형 모두는 본 발명 사상의 범주에 속한다 할 것이다.As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited to the above embodiments, which can be variously modified by those skilled in the art to which the present invention pertains. And variations are possible. Accordingly, the spirit of the invention should be understood only by the claims set forth below, and all equivalent or equivalent modifications will fall within the scope of the invention.
본 발명은 고주파 전자기장을 이용하여 전자부품 간을 접속시키는 장비에 적용된다.  The present invention is applied to equipment for connecting electronic components using high frequency electromagnetic fields.

Claims (13)

  1. 고주파를 이용한 전자부품 접속 방법으로, 상기 방법은 An electronic component connection method using a high frequency, the method
    접속시키고자 하는 전자부품에 구비된 접착제에 고주파를 인가하여 자체적으로 발열시킴으로 전기적 및 기계적으로 접합시키는 단계를 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.A method of connecting an electronic component using a high frequency, the method comprising: electrically and mechanically bonding a high frequency to an adhesive provided in an electronic component to be connected to generate heat by itself.
  2. 청구항 1에 있어서, The method according to claim 1,
    상기 인가되는 고주파는 상기 전자부품과 접촉하는 인터포저(interposer)층을 발열시키는 것을 특징으로 하는 전자부품 접속 방법.Wherein said applied high frequency heats an interposer layer in contact with said electronic component.
  3. 청구항 2에 있어서, The method according to claim 2,
    상기 인터포저층은 상기 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.And the interposer layer includes any one or two or more selected from the group consisting of a component having a chemical dipole vibrating by the applied high frequency, a metal, and a ferromagnetic material.
  4. 청구항 3에 있어서, The method according to claim 3,
    상기 화학적 쌍극자를 가지는 특성의 성분은 폴링스케일 전기음성도 차이가 0.3 이상인 극성 결합을 하나 또는 두 개 이상 포함하는 화합물을 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.The component of the characteristic having a chemical dipole includes a compound containing one or two or more polar bonds with a difference in polling scale electronegativity of 0.3 or more.
  5. 청구항 1에 있어서, The method according to claim 1,
    상기 접착제는 폴리머 접착제이며, 상기 폴리머 접착제는 인가되는 상기 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.The adhesive is a polymer adhesive, wherein the polymer adhesive includes any one or two or more selected from the group consisting of a component having a chemical dipole vibrating by the high frequency applied, a metal and a ferromagnetic material. How to connect electronic components.
  6. 청구항 5에 있어서, The method according to claim 5,
    상기 화학적 쌍극자를 가지는 특성의 성분은 폴링스케일 전기음성도 차이가 0.3 이상인 극성 결합을 하나 또는 두 개 이상 포함하는 화합물을 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.The component of the characteristic having a chemical dipole includes a compound containing one or two or more polar bonds with a difference in polling scale electronegativity of 0.3 or more.
  7. 제 1 전극상에 제 1 전자부품을 적치하는 단계;Depositing a first electronic component on the first electrode;
    상기 제 1 전자부품상에 접착제를 위치시키고, 상기 제 1 전자부품과 접속되는 제 2 전자부품을 정렬시키는 단계;Placing an adhesive on the first electronic component and aligning a second electronic component to be connected with the first electronic component;
    상기 제 2 전자부품에 제 2 전극을 접촉시키는 단계; 및 Contacting a second electrode with the second electronic component; And
    상기 제 1 전극과 제 2 전극을 통하여 상기 접착제에 고주파를 인가하여, 상기 접착제를 발열시키는 단계를 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.And applying a high frequency to the adhesive through the first electrode and the second electrode, thereby generating heat of the adhesive.
  8. 청구항 7에 있어서, The method according to claim 7,
    상기 제 2 전극과 상기 제 2 전자부품 사이에는 인터포저층이 구비되며, 상기 제 2 전극으로부터 발생하는 고주파는 상기 인터포저층을 발열시키는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.An interposer layer is provided between the second electrode and the second electronic component, and the high frequency generated from the second electrode generates the interposer layer.
  9. 청구항 8에 있어서, The method according to claim 8,
    상기 인터포저층은 상기 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나를 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.And the interposer layer comprises any one selected from the group consisting of a component having a chemical dipole vibrating by the applied high frequency, a metal, and a ferromagnetic material.
  10. 청구항 7에 있어서, The method according to claim 7,
    상기 접착제는 상기 인가되는 고주파에 의하여 진동하는 화학적 쌍극자를 가지는 특성의 성분, 금속 및 강자성체로부터 이루어진 군으로부터 선택된 어느 하나 또는 2종 이상을 포함하는 것을 특징으로 하는 고주파를 이용한 전자부품 접속 방법.And the adhesive comprises any one or two or more selected from the group consisting of a component having a chemical dipole vibrating by the applied high frequency, a metal and a ferromagnetic material.
  11. 청구항 7 내지 청구항 10 중 어느 한 항에 따른 방법에 의하여 기판에 접속된 전자부품. The electronic component connected to the board | substrate by the method of any one of Claims 7-10.
  12. 고주파를 이용한 전자부품 접속장치로서, 상기 장치는An electronic component connecting apparatus using high frequency, the apparatus
    스테이지; stage;
    상기 스테이지 상에 구비된 제 1 전극;A first electrode provided on the stage;
    상기 제 1 전극과 소정 간격으로 이격된 제 2 전극; 및 A second electrode spaced apart from the first electrode at a predetermined interval; And
    상기 제 1 전극과 제 2 전극에 연결된 고주파 발생장치를 포함하며, 여기에서 상기 장치는 상기 제 1 전극과 제 2 전극 사이에 구비되는 전자부품에 고주파를 인가하여 상기 전자부품을 접속시키는 것을 특징으로 하는 고주파를 이용한 전자부품 접속장치.And a high frequency generator connected to the first electrode and the second electrode, wherein the device connects the electronic component by applying a high frequency to an electronic component provided between the first electrode and the second electrode. Electronic component connection device using high frequency.
  13. 청구항 12에 있어서, The method according to claim 12,
    상기 제 2 전극에는 인터포저층이 구비되며, 여기에서 인터포저층은 상기 전자부품과 접촉하며, 상기 인가되는 고주파에 의하여 발열되는 것을 특징으로 하는 고주파를 이용한 전자부품 접속장치.The second electrode is provided with an interposer layer, wherein the interposer layer is in contact with the electronic component, the electronic component connecting device using a high frequency, characterized in that the heat generated by the applied high frequency.
PCT/KR2011/009875 2011-07-18 2011-12-20 Method and apparatus for connecting an electronic component using a high frequency electromagnetic field WO2013012139A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343420B2 (en) 2014-02-14 2016-05-17 Globalfoundries Inc. Universal solder joints for 3D packaging
CN114535916A (en) * 2022-04-01 2022-05-27 长鑫存储技术有限公司 Welding alignment equipment and method for welding by adopting same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02241563A (en) * 1989-03-16 1990-09-26 Toshiba Corp Insulating coating method and apparatus
JPH1060385A (en) * 1996-08-12 1998-03-03 Shinko Kagaku Kogyo Kk High-frequency heating bondable adhesive sheet and method for bonding therewith
KR100504955B1 (en) * 2003-03-11 2005-08-08 (주)워스코 Contactless High Frequency Induction Heater weld
JP2008521609A (en) * 2004-11-30 2008-06-26 サン−ゴバン グラス フランス Method and apparatus for brazing connections by induction heating

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031902A (en) 2002-04-30 2004-01-29 Toray Eng Co Ltd Mounting method and mounting apparatus
JP2004288946A (en) * 2003-03-24 2004-10-14 Casio Comput Co Ltd Mounting method of electronic compound
JP2007084767A (en) 2005-09-26 2007-04-05 Sumitomo Electric Ind Ltd Adhesive

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02241563A (en) * 1989-03-16 1990-09-26 Toshiba Corp Insulating coating method and apparatus
JPH1060385A (en) * 1996-08-12 1998-03-03 Shinko Kagaku Kogyo Kk High-frequency heating bondable adhesive sheet and method for bonding therewith
KR100504955B1 (en) * 2003-03-11 2005-08-08 (주)워스코 Contactless High Frequency Induction Heater weld
JP2008521609A (en) * 2004-11-30 2008-06-26 サン−ゴバン グラス フランス Method and apparatus for brazing connections by induction heating

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343420B2 (en) 2014-02-14 2016-05-17 Globalfoundries Inc. Universal solder joints for 3D packaging
CN114535916A (en) * 2022-04-01 2022-05-27 长鑫存储技术有限公司 Welding alignment equipment and method for welding by adopting same
CN114535916B (en) * 2022-04-01 2023-12-22 长鑫存储技术有限公司 Welding alignment device and welding method using same

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