WO2012165174A1 - 抵抗加熱ヒータの劣化検出装置および方法 - Google Patents

抵抗加熱ヒータの劣化検出装置および方法 Download PDF

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Publication number
WO2012165174A1
WO2012165174A1 PCT/JP2012/062770 JP2012062770W WO2012165174A1 WO 2012165174 A1 WO2012165174 A1 WO 2012165174A1 JP 2012062770 W JP2012062770 W JP 2012062770W WO 2012165174 A1 WO2012165174 A1 WO 2012165174A1
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Prior art keywords
temperature
resistance
heater
value
resistance heater
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PCT/JP2012/062770
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English (en)
French (fr)
Japanese (ja)
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崇雄 今中
坂上　英和
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シャープ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/0288—Applications for non specified applications

Definitions

  • the present invention relates to a resistance heater deterioration detection apparatus and method, and more particularly to a resistance heater deterioration detection apparatus and method used in a semiconductor manufacturing apparatus such as a crystal growth apparatus.
  • Resistance heaters are suitable for uniform heating and are often used for substrate heating in crystal growth apparatuses such as MOCVD (Metal Organic Chemical Vapor Deposition) apparatuses.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • a typical example of a material for a resistance heater for a crystal growth apparatus is molybdenum disilicide having excellent strength and oxidation resistance.
  • ⁇ Resistance heaters deteriorate with use.
  • the reason why the resistance heater deteriorates in the case of the MOCVD apparatus is that the source gas in the gas flowing downward from the susceptor reacts with the high-temperature heater and corrodes the heater.
  • the heater breaks in the worst case.
  • the heater is suddenly disconnected, not only the heater replacement operation but also the operation of degassing the newly installed heater or re-measuring the relationship between the power supplied to the heater and the substrate temperature is required. If such an operation occurs suddenly, the production plan may not be maintained.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2004-319953
  • the deterioration detection device described in this document includes a current detection unit, a voltage detection unit, a temperature detection unit, a table memory, and a CPU.
  • the current detection means detects the level of the current flowing through the heater heated by the commercial power source.
  • the voltage detection means detects the level of the voltage applied to the heater.
  • the temperature detecting means detects the heater temperature.
  • the table memory stores a resistance temperature coefficient for calculating the resistance at the time of manufacturing the heater.
  • the CPU calculates a resistance at the time of inspection of the heater based on each detection result by the voltage detection means and the current detection means, and based on the detection result of the temperature detection means and the resistance temperature coefficient stored in the table memory.
  • the table memory includes a unique identification number of the heater, a resistance temperature coefficient of the heater, a length of the heater, a sectional area of the heater, and a reference time of the heater.
  • a resistance for example, a reference resistance at the time of manufacture is stored as a set.
  • the temperature coefficient of resistance values for 20 ° C., 850 ° C., and 1000 ° C. are stored in the case of FIG.
  • Resistance values such as molybdenum disilicide used for resistance heaters are temperature dependent, such that they are very small at room temperature and increase at high temperatures. Therefore, when the deterioration determination is performed by comparing the resistance value of the heater at the reference time and the resistance value of the heater at the time of inspection as in the above patent document, the temperature of the heater at the reference time and the temperature of the resistance at the time of inspection are determined. Must be the same.
  • a resistance temperature coefficient corresponding to a plurality of temperatures is stored in the table memory in advance, and using this coefficient, the reference time temperature is equal to the inspection temperature. The resistance value is converted.
  • the deterioration determination of the resistance heater used in the crystal growth apparatus is performed during the crystal growth in terms of efficiency.
  • the heater temperature during crystal growth varies depending on the components of the source gas, the film thickness of the material formed on the substrate, etc., and is not fixed.
  • the reference resistance value resistance temperature coefficient in the case of the above-mentioned patent document
  • an object of the present invention is to provide a deterioration determination apparatus and method that can perform deterioration determination of a resistance heater more simply than in the past.
  • the present invention is an apparatus for detecting deterioration of a resistance heater, a current detection unit that detects a current flowing through the resistance heater, a voltage detection unit that detects a voltage applied to the resistance heater, and a resistance heater
  • the temperature detection part which detects the temperature of this, and the control part are provided.
  • the control unit detects the current value and the voltage value of the resistance heater detected when the temperature of the resistance heater being energized is the first temperature, and the temperature of the resistance heater being energized is different from the first temperature.
  • a linear expression representing a relationship between the temperature of the resistance heater and the resistance value of the resistance heater is determined based at least on the current value and voltage value of the resistance heater detected at the temperature of 2.
  • the control unit calculates the first resistance value by applying the temperature of the energizing resistance heater detected at the time of determination after determining this linear equation to this linear equation, and is detected at the time of the above determination.
  • the second resistance value is calculated from the current value and voltage value of the resistance heater being energized. Then, the control unit determines that the resistance heater has deteriorated when the deviation between the first resistance value and the second resistance value or the ratio of the second resistance value to the first resistance value exceeds a threshold value.
  • the resistance heater is used for heating the substrate for crystal growth.
  • the above determination is included in the time zone during crystal growth.
  • the temperature of the resistance heater during crystal growth is included between the first temperature and the second temperature.
  • the threshold value is a constant value regardless of the temperature of the resistance heater at the time of determination.
  • the present invention is a method for detecting deterioration of a resistance heater, the step of detecting a current value and a voltage value of the resistance heater when the temperature of the resistance heater being energized is a first temperature; A step of detecting a current value and a voltage value of the resistance heater when the temperature of the resistance heater being energized is a second temperature different from the first temperature; and a detection when the temperature is the first and second temperatures.
  • a linear equation representing the relationship between the temperature of the resistance heater and the resistance value of the resistance heater is determined, and the temperature of the resistance heater detected at the time of determination is applied to this linear equation. Therefore, the deterioration determination of the resistance heater can be performed more easily than in the past.
  • FIG. 6 is a diagram showing an example of a system parameter input screen displayed on a display unit 94.
  • FIG. It is a figure which shows the relationship between a heater resistance value and the film forming frequency.
  • FIG. 1 is a diagram showing a configuration of a crystal growth apparatus 1 to which a heater deterioration determination apparatus according to an embodiment of the present invention is applied.
  • FIG. 1 shows an overall configuration of a crystal growth apparatus 1 (also referred to as MOCVD apparatus 1) by a MOCVD (Metal Organic Chemical Vapor Deposition) method.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • an MOCVD apparatus 1 is used for growing a thin film of a III-V group semiconductor crystal such as InGaAs (indium gallium arsenide), InGaP (indium gallium phosphide), InGaN (indium gallium nitride) on a substrate.
  • the MOCVD apparatus 1 includes a reaction vessel 10, a susceptor 11, a heater 13, a heater power supply 51, a shower head 20, a source gas supply source (not shown), a cooling pump (not shown), a gas exhaust unit 40, and a current detection unit 81. , A voltage detection unit 82, a temperature sensor TS1, a temperature detection unit 83, a control unit 93, and a display unit 94.
  • the susceptor 11 is a mounting table for holding a plurality of substrates SUB soaking, and is provided near the center in the reaction vessel.
  • the surface temperature of the substrate SUB is detected by a radiation thermometer (not shown).
  • a heater 13 is provided below the susceptor 11, for heating the substrate SUB placed on the susceptor 11 via the susceptor 11.
  • a resistance heater using molybdenum disilicide or the like is used as the heater 13 .
  • a heater power supply 51 for supplying electric power to the heater 13 is provided outside the reaction vessel 10.
  • the shower head 20 is provided on the upper part of the substrate SUB so as to face the susceptor 11 and uniformly irradiates the group III gas (organic metal gas) and the group V gas supplied from the source gas supply source to the substrate.
  • the shower head 20 is cooled by a refrigerant (for example, water) supplied from a cooling pump so that the temperature of the front surface portion 21 of the shower head 20 does not rise due to radiant heat from the susceptor 11. Excess source gas that has not been used for crystal growth is exhausted from the gas exhaust unit 40.
  • the temperature sensor TS1 is, for example, a thermocouple, and is provided for measuring the temperature of the heater 13.
  • the temperature detector 83 detects the temperature of the heater 13 based on the output of the temperature sensor TS1.
  • the detection result of the temperature detection unit 83 is output to the control unit 93.
  • the current detector 81 and the voltage detector 82 detect the current and voltage of the energized heater 13, respectively. Detection results by the current detection unit 81 and the voltage detection unit 82 are output to the control unit 93.
  • the control unit 93 includes a PLC (Programmable Logic Controller) as a main control device.
  • the PLC sequence-controls the MOCVD apparatus 1 according to a preprogrammed procedure (referred to as a recipe).
  • Control unit 93 further determines deterioration of heater 13 based on detection results of current detection unit 81, voltage detection unit 82, and temperature detection unit 83. That is, the control unit 93 also functions as a deterioration determination device for the resistance heater 13.
  • the deterioration determination program is incorporated in the PLC control program.
  • the display unit 94 is composed of a touch panel and also serves as an input unit.
  • the display unit 94 functions as a user interface for inputting system parameters, recipes, and the like.
  • the deterioration determination procedure executed by the controller 93 is based on the following examination by the inventors of the present invention. That is, according to the study by the inventors, the resistance value of the heater until the heater is turned off, as shown in FIG. 2, the resistance value of the heater gradually increases and the heater is turned off as the number of film formation increases. It turned out to be a rising curve before.
  • the ratio or deviation between the initial resistance value of the heater and the resistance value immediately before the heater was turned off did not change at any temperature.
  • the 332th resistance value / first resistance value is all 1.08
  • the 408th resistance value / the first resistance value was 1.15.
  • a linear equation serving as a reference representing the relationship between the heater temperature and the heater resistance value is determined in the initial use state of the resistance heater.
  • the first resistance value is calculated by applying the temperature of the energized heater to this linear equation, and the first resistance value is calculated from the current value and voltage value of the energized heater detected during the deterioration determination.
  • a resistance value of 2 is calculated. Then, when the deviation between the first resistance value and the second resistance value or the ratio of the second resistance value to the first resistance value exceeds the threshold value, it is determined that the resistance heater has deteriorated.
  • the threshold value used for the deterioration determination can be set to a constant value regardless of the heater temperature.
  • Reference data a set of reference temperature and reference resistance value (collectively referred to as reference data) is acquired.
  • the acquisition of the reference data is performed when the heater 13 is in a new state such as immediately after the heater 13 is replaced.
  • the reference data it is necessary to energize the resistance heater.
  • the reference data may be obtained by energizing the resistance heater separately from the crystal growth. Reference data may be acquired when the temperature is raised.
  • FIG. 4 is a flowchart showing a procedure for determining a reference resistance-temperature characteristic.
  • the reference data is obtained by energizing the resistance heater separately from the crystal growth.
  • step S101 energization from the heater power supply 51 to the heater is started under the control of the control unit 93.
  • the control unit 93 causes the temperature detection unit 83, the current detection unit 81, and the voltage detection unit.
  • the temperature, current value, and voltage value of the heater 13 are detected by 82 (step S103).
  • the temperature, current and voltage of the heater 13 may be measured based on a command from the control unit 93 without depending on the user input.
  • the temperature, current, and voltage of the heater 13 may be measured when a predetermined time elapses after the temperature of the heater 13 reaches a predetermined set temperature.
  • the in-plane distribution of the substrate temperature measured by the radiation thermometer is within ⁇ 1 ° C. after the temperature of the heater 13 reaches a predetermined set temperature, the temperature, current and voltage of the heater 13 are measured. It may be.
  • the controller 93 calculates the resistance value of the heater using the detected current value and voltage value of the heater 13 (step S104).
  • steps S102 to S104 are repeated until a necessary number (at least two) of reference data (heater temperature and resistance value) is acquired (that is, until YES in step S105).
  • reference data that is, until YES in step S105.
  • the set temperature of the heater 13 that is, the input power to the heater 13 is changed (step S106).
  • a (Y1-Y2) / (X1-X2) (2)
  • b Y1-X1 ⁇ (Y1-Y2) / (X1-X2) (3)
  • a and b can be obtained by the least square method.
  • the reference temperatures X1 and X2 are preferably set so as to be close to the crystal growth temperature (for example, the crystal growth temperature is included between X1 and X2).
  • the resistance value of the resistance heater usually shows a metallic temperature dependence (a relationship in which the resistance is approximately proportional to the temperature). However, if X1 and X2 are set near the film forming temperature, the resistance value is completely linear. Even if it is a relationship, the error is small.
  • the control unit 93 stores the calculated parameters a and b in the built-in memory (step S108). Thereafter, the energization to the heater 13 is stopped and the process ends (S109).
  • FIG. 5 is a diagram illustrating an example of a screen of the display unit 94 when the reference data is acquired.
  • the current temperature (° C.) of the heater 13 detected by the temperature detector 83 and the set temperature (° C.) of the heater 13 are shown in the upper left of the screen. .
  • buttons “Measure 1” and “Measure 2” for the user to input the measurement timing of the reference data to the PLC are arranged.
  • a measured temperature 1 detected when the user presses the “Measure 1” button and a measured resistance value 1 calculated from the heater voltage and heater current detected at the same timing are shown.
  • a measured temperature 2 detected when the user presses the “Measure 2” button and a measured resistance value 2 calculated from the heater voltage and heater current detected at the same timing are shown.
  • the resistance value change rate ( ⁇ / ° C.) obtained from the measurement data that is, the value of the parameter “a” in the above-described equation (2) is also shown.
  • the reference data is detected, for example, when the temperature of the heater 13 reaches around 1000 ° C. and around 1200 ° C.
  • the temperature, current value, and voltage value of the heater 13 in FIG. 1 are detected by the temperature detection unit 83, the current detection unit 81, and the voltage detection unit 82, respectively.
  • the controller 93 calculates the first resistance value by applying the temperature of the heater 13 detected at the time of this determination to the linear equation of the above equation (1). Furthermore, the controller 93 calculates a second resistance value from the current value and voltage value of the heater 13 detected at the time of this determination.
  • the controller 93 determines that the resistance heater has deteriorated when the deviation between the calculated first resistance value and the second resistance value or the ratio of the second resistance value to the first resistance value exceeds a threshold value. .
  • This threshold value is obtained by multiplying the first resistance value by a predetermined allowable change rate.
  • the allowable change rate is set to a constant value regardless of the temperature of the heater 13.
  • FIG. 6 is a flowchart showing an outline of the operation of the crystal growth apparatus 1 of FIG. 1 during crystal growth.
  • control program control procedure is also referred to as a recipe
  • PLC control unit 93
  • the controller 93 introduces a group V gas into the reaction vessel 10 through the shower head 20 (step S202). Subsequently, energization to the heater 13 is started (step S203). When the substrate temperature reaches the temperature at the time of film formation, the controller 93 introduces the group III gas into the reaction vessel 10 through the shower head 20 (step S204). Thus, film formation is started.
  • the controller 93 determines the deterioration of the heater during the film formation (step S205). When the predetermined film formation time has elapsed, the introduction of the group III gas is stopped and the film formation is completed (step S206). After the film formation is completed, the power supplied to the heater 13 is gradually reduced, and the energization to the heater 13 is eventually stopped (step S207). Further, the introduction of the group V gas into the reaction vessel 10 is stopped.
  • FIG. 7 is a diagram showing an example of a system parameter setting screen displayed on the display unit 94.
  • the allowable change rate of the heater resistance value is set as one of the system parameters.
  • a value obtained by multiplying the input allowable change rate by the reference resistance value represented by the above-described equation (1) is used as a threshold value (allowable deviation). That is, when the deviation between the resistance value of the heater 13 detected at the time of determination and the reference resistance value expressed by the equation (1) changes beyond the allowable deviation, it is determined that the abnormality is present.
  • FIG. 8 is a diagram showing the relationship between the heater resistance value and the number of film formations.
  • the heater temperature during film formation is constant for simplicity.
  • the number of times of film formation is N or more and the resistance value is Rth or more.
  • FIG. 9 is a diagram illustrating an example of a recipe creation screen displayed on the display unit 94.
  • Recipes are executed in the order of step numbers (Steps) shown in the A column.
  • LSn n is a number
  • the process is repeated n times up to the step number where LE is written.
  • a pair of LSn and LE constitutes one set of loops.
  • step 6 to step 10 are the first loop (repetition number: 3 times)
  • step 7 to step 9 are the second loop (repetition number: 2 times). That is, it is a multiple loop in which the second loop is included in the first loop.
  • Column D is a column for describing a comment
  • column E shows the execution time (Time) of each step in a format of MM: SS: 0 (minute: second).
  • the controller 93 determines the deterioration of the heater 13. As a result of the deterioration determination, when the heater resistance value exceeds the threshold value, the control unit 93 displays the heater abnormality on the display unit 94 in FIG. This deterioration determination can be performed in real time during film formation.
  • FIG. 10 is a flowchart showing the heater deterioration determination procedure shown in step S205 of FIG.
  • control unit 93 performs temperature detection unit 83, current detection unit 81, and voltage detection unit 82 for a predetermined time (for example, 1 minute) set in a recipe.
  • a predetermined time for example, 1 minute
  • step S302 When the predetermined time has elapsed (YES in step S302), the controller 93 averages the measured temperature, current value, and voltage value of the heater 13 (step S303). And the control part 93 calculates the present resistance value from the average value of an electric current, and the average value of a voltage (step S304).
  • the controller 93 calculates a deviation between the current resistance value obtained in step S304 and the reference resistance value obtained in step S305 or a ratio of the current resistance value to the reference resistance value (step S306). If the calculated deviation or ratio exceeds a predetermined allowable value (threshold) (step S307), an abnormality (deterioration of the heater) is displayed on the display unit 94 (step S308).
  • FIG. 11 is a diagram showing the relationship between the heater temperature and the resistance value of the heater. Referring to FIG. 11, it is assumed that reference resistance values R1 and R2 are detected in advance at heater temperatures T1 and T2, respectively.
  • the heater temperature during film formation is not constant because it varies depending on the gas composition, gas flow rate, film thickness, and the like. For example, assuming that the heater temperatures are different from Ta to Tg in FIG. 11 for each film formation, in the conventional method, at least a reference resistance corresponding to the heater temperatures Ta to Tg is acquired in advance and stored as a table in the memory. I had to remember it.
  • the deterioration determination method since a linear expression representing the relationship between the heater temperature and the heater resistance value is used, there are at least two sets of reference measurement data (a set of reference temperature and resistance value). For example, the reference resistance values Ra to Rg corresponding to the heater temperatures Ta to Tg at the time of film formation can be accurately estimated.
  • the method according to this embodiment is simpler than the prior art and does not require a memory capacity. For this reason, this deterioration determination method can be easily incorporated into a control program for PLC normally used in a crystal growth apparatus.
  • the MOCVD apparatus has been described as an example.
  • the method according to this embodiment includes other methods such as sputtering and vacuum deposition, as well as other CVD apparatuses that do not use an organic metal gas. It can be applied to the film forming apparatus.
  • the method according to this embodiment can be applied to a semiconductor device other than the film forming apparatus, for example, an annealing apparatus.

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PCT/JP2012/062770 2011-06-01 2012-05-18 抵抗加熱ヒータの劣化検出装置および方法 WO2012165174A1 (ja)

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JP2021002576A (ja) * 2019-06-21 2021-01-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
EP3273809B1 (en) 2015-03-26 2021-02-17 Philip Morris Products S.a.s. Heater management
WO2022163214A1 (ja) * 2021-01-29 2022-08-04 住友電気工業株式会社 ヒータ制御装置
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