WO2012060199A1 - Corps stratifié, panneau pour dispositif d'affichage à plaque de soutien, panneau pour dispositif d'affichage et dispositif d'affichage - Google Patents

Corps stratifié, panneau pour dispositif d'affichage à plaque de soutien, panneau pour dispositif d'affichage et dispositif d'affichage Download PDF

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Publication number
WO2012060199A1
WO2012060199A1 PCT/JP2011/073740 JP2011073740W WO2012060199A1 WO 2012060199 A1 WO2012060199 A1 WO 2012060199A1 JP 2011073740 W JP2011073740 W JP 2011073740W WO 2012060199 A1 WO2012060199 A1 WO 2012060199A1
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Prior art keywords
resin layer
substrate
metal oxide
oxide film
conductive metal
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PCT/JP2011/073740
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English (en)
Japanese (ja)
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研一 江畑
祥孝 松山
大輔 内田
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旭硝子株式会社
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Priority to CN2011800531927A priority Critical patent/CN103201104A/zh
Priority to KR1020137011491A priority patent/KR20130140707A/ko
Priority to JP2012541800A priority patent/JP5842821B2/ja
Publication of WO2012060199A1 publication Critical patent/WO2012060199A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10165—Functional features of the laminated safety glass or glazing
    • B32B17/10174—Coatings of a metallic or dielectric material on a constituent layer of glass or polymer
    • B32B17/10201—Dielectric coatings
    • B32B17/10211—Doped dielectric layer, electrically conductive, e.g. SnO2:F
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10798—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing silicone
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/20—Inorganic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/26—Polymeric coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/412—Transparent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/12—Photovoltaic modules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202—LCD, i.e. liquid crystal displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED

Definitions

  • the present invention relates to a laminate, a display device panel with a support plate, a display device panel, and a display device.
  • devices such as solar cells (PV), liquid crystal displays (LCD), and organic EL displays (OLED) have been made thinner and lighter, and the substrates used in these devices have been made thinner. is doing. If the strength of the substrate is insufficient due to the thin plate, the handling property of the substrate is lowered in the device manufacturing process.
  • PV solar cells
  • LCD liquid crystal displays
  • OLED organic EL displays
  • a method in which a device member for example, a thin film transistor
  • a chemical etching process has been widely adopted.
  • this method for example, when the thickness of one substrate is reduced from 0.7 mm to 0.2 mm or 0.1 mm, most of the original substrate material is scraped off with an etching solution. From the viewpoint of productivity and efficiency of use of raw materials, it is not preferable.
  • a method in which a laminate in which a substrate and a reinforcing plate are laminated is prepared, a device member is formed on the substrate of the laminated body, and then the reinforcing plate is peeled from the substrate.
  • the reinforcing plate has a glass plate and a resin layer fixed on the glass plate, and the resin layer and the substrate are in close contact with each other so as to be peeled off.
  • the reinforcing plate can be reused as a laminate after being peeled from the substrate and laminated with a new substrate.
  • the present invention has been made in view of the above-described problems, and even after high-temperature heat treatment is performed, a substrate in which a part of the resin layer is on the product side when the resin layer and the substrate are peeled off It is an object of the present invention to provide a laminate that can suppress adhesion to the substrate and can suppress peeling charge on the surface of the substrate to be peeled. Furthermore, an object of the present invention is to provide a display device panel with a support plate including the laminate, a display device panel formed using the display device panel with the support plate, and a display device.
  • the first aspect of the present invention provides at least one selected from the group consisting of indium, tin, zinc, titanium, and gallium on the surface of the support plate, the resin layer, and the substrate. And a substrate with a conductive metal oxide film having a conductive metal oxide film containing two metal oxides in this order, so that the conductive metal oxide film is peelably adhered to the resin layer.
  • the substrate with the conductive metal oxide film is disposed on the resin layer, and the peel strength between the resin layer and the support plate is between the resin layer and the substrate with the conductive metal oxide film. It is a laminate that is higher than the peel strength.
  • the oxide further contains at least one element selected from the group consisting of aluminum, molybdenum, copper, vanadium, niobium, tantalum, boron, and fluorine.
  • the said resin layer is a silicone resin layer.
  • the said resin layer is comprised with the addition reaction type hardened
  • the molar ratio of hydrogen atoms bonded to silicon atoms of the organohydrogenpolysiloxane with respect to the alkenyl groups of the organoalkenylpolysiloxane is preferably 0.5 to 2.
  • the second aspect of the present invention is provided on the surface of the laminate of the first aspect and the surface opposite to the surface of the substrate with the conductive metal oxide film in close contact with the resin layer.
  • a display device panel with a support plate comprising: a constituent member of the display device panel.
  • the 3rd aspect of this invention is a panel for display apparatuses formed using the panel for display apparatuses with a support plate of a 2nd aspect.
  • a fourth aspect of the present invention is a display device having the display device panel according to the third aspect.
  • the panel for display apparatuses with a support plate containing this laminated body, the panel for display apparatuses formed using the panel for display apparatuses with a support plate, and a display apparatus can be provided.
  • FIG. 1 is a schematic cross-sectional view of an embodiment of a laminate according to the present invention.
  • FIG. 2 is a schematic cross-sectional view of one embodiment of the display device-equipped panel according to the present invention.
  • fixing the resin layer to the support plate means that the peel strength between the resin layer and the support plate is higher than the peel strength between the resin layer and the substrate with the conductive metal oxide film. It means to combine.
  • FIG. 1 is a schematic cross-sectional view of an example of a laminate according to the present invention.
  • the laminate 10 is a laminate in which a substrate 24 with a conductive metal oxide film, a support plate 31, and a resin layer 32 exist therebetween.
  • the substrate 24 with a conductive metal oxide film includes a substrate 20 and a conductive metal oxide film 22 provided on the surface of the substrate 20.
  • the substrate 24 with the conductive metal oxide film is disposed on the resin layer 32 so that the conductive metal oxide film 22 is in close contact with the resin layer 32 in a peelable manner.
  • the resin layer 32 is fixed on the support plate 31 and is in close contact with the conductive metal oxide film 22 of the substrate 24 with the conductive metal oxide film in a peelable manner.
  • the reinforcing plate 30 including the support plate 31 and the resin layer 32 reinforces the substrate 24 with the conductive metal oxide film in a process of manufacturing a device (electronic device) such as a liquid crystal display.
  • This laminate 10 is used halfway through the device manufacturing process. That is, the laminate 10 is used until a device member such as a thin film transistor is formed on the surface opposite to the resin layer 32 of the substrate 24 with the conductive metal oxide film. Thereafter, the reinforcing plate 30 is peeled off from the substrate 24 with the conductive metal oxide film and does not become a member constituting the device. The reinforcing plate 30 peeled from the substrate 24 with the conductive metal oxide film is laminated with a new substrate 24 with the conductive metal oxide film, and can be reused as the laminate 10.
  • the substrate 24 with the conductive metal oxide film includes a substrate 20 and a conductive metal oxide film 22 provided on the surface of the substrate 20.
  • the conductive metal oxide film 22 is disposed on the outermost surface of the substrate 24 with the conductive metal oxide film so that the conductive metal oxide film 22 can be peeled and adhered to a resin layer 32 described later.
  • the substrate 20 and the conductive metal oxide film 22 will be described in detail.
  • the substrate 20 includes a conductive metal oxide film 22 on the first main surface 201 on the resin layer 32 side, and a device member is formed on the second main surface 202 opposite to the resin layer 32 to constitute a device.
  • the device member refers to a member constituting at least a part of the device, such as a constituent member of a display device panel described later. Specific examples include a thin film transistor (TFT) and a color filter (CF). Examples of the device include a solar cell (PV), a liquid crystal display (LCD), and an organic EL display (OLED).
  • the type of the substrate 20 may be a general one, for example, a metal substrate such as a silicon wafer, a glass substrate, a resin substrate, a SUS substrate, or a copper substrate.
  • a glass substrate is preferable. This is because the glass substrate is excellent in chemical resistance and moisture permeability resistance and has a low heat shrinkage rate.
  • As an index of the heat shrinkage rate a linear expansion coefficient defined in JIS R 3102 (revised in 1995) is used.
  • the device manufacturing process often involves heat treatment, and various inconveniences are likely to occur.
  • the TFT may be excessively misaligned due to thermal contraction of the substrate 20.
  • the glass substrate is obtained by melting a glass raw material and molding the molten glass into a plate shape.
  • a molding method may be a general one, and for example, a float method, a fusion method, a slot down draw method, a full call method, a rubber method, or the like is used.
  • a glass substrate having a particularly small thickness can be obtained by heating a glass once formed into a plate shape to a moldable temperature, and stretching it by means of stretching or the like to make it thin (redraw method).
  • the glass of the glass substrate is not particularly limited, but non-alkali glass, borosilicate glass, soda lime glass, high silica glass, and other oxide-based glass mainly containing silicon oxide are preferable.
  • oxide-based glass a glass having a silicon oxide content of 40 to 90% by mass in terms of oxide is preferable.
  • a glass substrate for a liquid crystal display is made of glass (non-alkali glass) that does not substantially contain an alkali metal component because elution of an alkali metal component easily affects the liquid crystal.
  • the glass of the glass substrate is appropriately selected based on the type of device to be applied and its manufacturing process.
  • the thickness of the glass substrate is not particularly limited, but is usually less than 0.8 mm, preferably 0.3 mm or less, more preferably 0.15 mm or less, from the viewpoint of thinning and / or weight reduction of the glass substrate. It is. In the case of 0.8 mm or more, the demand for reducing the thickness and / or weight of the glass substrate cannot be satisfied. In the case of 0.3 mm or less, it is possible to give good flexibility to the glass substrate. In the case of 0.15 mm or less, the glass substrate can be wound into a roll. Further, the thickness of the glass substrate is preferably 0.03 mm or more for reasons such as easy manufacture of the glass substrate and easy handling of the glass substrate.
  • the resin type of the resin substrate is not particularly limited. Specifically, polyethylene terephthalate resin, polycarbonate resin, polyimide resin, fluorine resin, polyamide resin, polyaramid resin, polyethersulfone resin, polyetherketone resin, polyetheretherketone resin, polyethylene naphthalate resin, polyacrylic resin, various types Examples thereof include liquid crystal polymer resins, cycloolefin resins, and silicone resins.
  • the resin substrate may be transparent or opaque. Further, the resin substrate may have a functional layer such as a protective layer formed on the surface.
  • the thickness of the resin substrate is not particularly limited, but is preferably 0.7 mm or less, more preferably 0.3 mm or less, and more preferably 0.1 mm or less from the viewpoint of thinning and / or weight reduction. It is particularly preferred. Moreover, it is preferable that it is 1.0 micrometer or more from a viewpoint of handleability.
  • the substrate 20 may be composed of two or more layers.
  • the material forming each layer may be the same material or different materials.
  • the “thickness of the substrate 20” means the total thickness of all the layers.
  • the conductive metal oxide film 22 includes an oxide of at least one metal selected from the group consisting of indium, tin, zinc, titanium, and gallium.
  • the substrate 20 is an alkali-free glass substrate
  • the alkali contained in the conductive metal oxide film 22 as compared with alkaline earth metal components such as magnesium, calcium, and barium present on the surface of the alkali-free glass substrate.
  • Earth metal components have low electronegativity. Therefore, compared with the case where the alkali-free glass substrate and the resin layer 32 are directly brought into contact with each other and exposed to high temperature conditions, the conductive metal oxide film 22 and the resin layer are exposed even when the laminate 10 of the present invention is exposed to high temperature conditions.
  • the substrate 24 with the conductive metal oxide film can be peeled without causing the resin layer 32 to adhere to the substrate 24 with the conductive metal oxide film due to heavy peeling.
  • heavy peeling means that the adhesion strength between the conductive metal oxide film 22 and the resin layer 32 is the adhesion strength between the surface of the support plate 31 and the resin layer 32 and the (bulk) strength of the resin layer 32. It means becoming larger than either.
  • the conductive metal oxide film 22 exhibits excellent conductivity. Therefore, peeling electrification on the surface of the substrate 24 with the conductive metal oxide film to be peeled can be suppressed. Moreover, if an ionizer or spray water is used in combination, the peeling charge can be further suppressed. Alternatively, even if the load of the ionizer or spray water is reduced, the same effect of suppressing the peeling charge as in the conventional case can be obtained.
  • the conductive metal oxide film 22 includes an oxide of at least one metal selected from the group consisting of indium, tin, zinc, titanium, and gallium. That is, the conductive metal oxide film 22 contains a metal oxide composed of the metal element and the oxygen element. Specifically, titanium oxide (TiO 2 ), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), gallium oxide (Ga 2 O 3 ), and the like can be given.
  • the conductive metal oxide film 22 may contain an oxide containing two or more of the metals listed above. Specifically, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide tin (ZTO), gallium-doped zinc oxide (GZO), and the like can be given.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZTO zinc oxide tin
  • GZO gallium-doped zinc oxide
  • the oxide may further contain at least one element selected from the group consisting of aluminum, molybdenum, copper, vanadium, niobium, tantalum, boron, and fluorine.
  • the element serves as a so-called dopant.
  • the metal oxide containing the element include aluminum-added zinc oxide (AZO), molybdenum-added indium oxide (IMO), niobium-added titanium oxide, tantalum-added titanium oxide, niobium-added tin oxide, and fluorine-added tin oxide. (FTO), boron-added zinc oxide (BZO), aluminum / copper-added zinc oxide, aluminum / vanadium-added zinc oxide, niobium / tantalum-added tin oxide, and the like.
  • AZO aluminum-added zinc oxide
  • IMO molybdenum-added indium oxide
  • FTO boron-added zinc oxide
  • BZO boron-added zinc
  • indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-added zinc oxide (in terms of better conductivity and excellent peelability between the substrate with the conductive metal oxide film and the resin layer) AZO), gallium-doped zinc oxide (GZO), fluorine-added tin oxide (FTO), and niobium-added titanium oxide are preferable, and indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine-added tin oxide (FTO) are more preferable. .
  • the conductive metal oxide film 22 preferably contains the above metal oxide as a main component. Specifically, the content of the metal oxide is based on the total amount of the conductive metal oxide film. It is preferably 98% by mass or more, more preferably 99% by mass or more, and particularly preferably 99.999% by mass or more.
  • the conductive metal oxide film 22 may contain oxides of other metals as long as the effects of the present invention are not impaired. In addition, the conductive metal oxide film 22 may contain a component (for example, metal) other than the metal oxide as long as the effects of the present invention are not impaired.
  • the thickness of the conductive metal oxide film 22 is not particularly limited, in terms of further suppressing the adhesion of the resin layer 32 to the substrate 24 with the conductive metal oxide film due to heavy peeling, and maintaining scratch resistance, 5 to 5000 nm is preferable, and 10 to 500 nm is more preferable.
  • the conductive metal oxide film 22 containing an oxide of the predetermined metal exhibits excellent conductivity. More specifically, the sheet resistance value of the conductive metal oxide film 22 is preferably 0.1 to 1000 ⁇ / ⁇ in that the peeling charge on the surface of the substrate to be peeled can be further suppressed. More preferably, it is 1 to 500 ⁇ / ⁇ .
  • a known method for example, a four-probe resistance measurement method defined in JIS R 1637 (established in 1998) is employed.
  • the appropriate density of polar groups present on the surface 221 in contact with the resin layer 32 of the conductive metal oxide film 22 is determined by measuring the water contact angle of the surface 221 before adhesion.
  • the higher the density of polar groups such as hydrophilicity existing on the surface the smaller the water contact angle tends to be.
  • the water contact angle is a contact angle defined in JIS R 3257 (established in 1999).
  • the water contact angle before adhesion of the surface 221 of the conductive metal oxide film 22 is 20 ° or more in that the adhesion of the resin layer 32 to the substrate 24 with the conductive metal oxide film due to heavy peeling is further suppressed.
  • it is 30 to 90 °, more preferably 40 to 70 °.
  • a fine uneven structure may be formed in advance on the surface 221 of the conductive metal oxide film 22 on the side in contact with the resin layer 32.
  • the degree of the concavo-convex structure is such that the surface 221 of the conductive metal oxide film 22 and the adhesion surface 321 of the resin layer 32 are peeled off by the anchor effect, whereby the substrate 24 with the conductive metal oxide film of the resin layer 32 is provided.
  • a range that does not cause excessive adhesion to the surface is preferable.
  • the surface roughness (Ra) of the surface 221 of the conductive metal oxide film 22 is preferably 0.1 to 50 nm, and more preferably 0.5 to 5 nm. Ra is measured according to JIS B 0601 (revised in 2001).
  • the conductive metal oxide film 22 is preferably transparent in consideration of using the substrate 24 with the conductive metal oxide film for device applications.
  • the transmittance at a wavelength of 380 to 780 nm, that is, the visible light transmittance of the substrate 24 with a conductive metal oxide film is preferably 70% or more, and more preferably 80% or more.
  • the conductive metal oxide film 22 is illustrated as a single layer in FIG. 1, but may be a laminate of two or more layers.
  • the first conductive metal oxide film in contact with the substrate 20 and the second conductive film provided on the first conductive metal oxide film A metal oxide layer is provided.
  • the components of the first conductive metal oxide film and the second conductive metal oxide film may be different.
  • the conductive metal oxide film 22 may be partially provided on the surface of the substrate 20 as long as the effects of the present invention are not impaired.
  • the conductive metal oxide film 22 may be provided on the surface of the substrate 20 in an island shape or a stripe shape. More specifically, the coverage of the conductive metal oxide film 22 on the surface of the substrate 20 is such that the adhesion of the resin layer 32 to the substrate 24 with the conductive metal oxide film due to heavy release is further suppressed. 50 to 100% is preferable, and 75 to 100% is more preferable.
  • the manufacturing method in particular of the conductive metal oxide film 22 is not restrict
  • the substrate 24 with the conductive metal oxide film includes the substrate 20 and the conductive metal oxide film 22 described above. However, the substrate 20 and the conductive metal oxide film 22 are within a range not impairing the effects of the present invention. You may have another member in between. Examples of other members include an alkali barrier layer that prevents diffusion of alkali ions from the substrate 20 to the conductive metal oxide film 22, and a planarization layer that planarizes the surface of the conductive metal oxide film 22. It is done.
  • the support plate 31 cooperates with the resin layer 32 to support and reinforce the substrate 24 with the conductive metal oxide film, and the substrate 24 with the conductive metal oxide film is deformed or damaged in the device manufacturing process. To prevent damage.
  • the substrate 24 with a conductive metal oxide film that is thinner than the conventional one by using the laminate 10 having the same thickness as the conventional substrate, in the device manufacturing process, One of the purposes of using the support plate 31 is to make it possible to use manufacturing technology and manufacturing equipment suitable for the substrate.
  • the support plate 31 for example, a metal plate such as a glass plate, a resin plate, or a SUS plate is used.
  • the support plate 31 is preferably formed of a material having a small difference in linear expansion coefficient from the substrate 20, and more preferably formed of the same material as the substrate 20.
  • the substrate 20 is a glass substrate
  • the support plate 31 is preferably a glass plate.
  • the support plate 31 is preferably a glass plate made of the same glass material as the glass substrate of the substrate 20.
  • the thickness of the support plate 31 may be thicker or thinner than the substrate 20.
  • the thickness of the support plate 31 is selected based on the thickness of the substrate 24 with the conductive metal oxide film, the thickness of the resin layer 32, and the thickness of the stacked body 10.
  • the current device manufacturing process is designed to process a substrate having a thickness of 0.5 mm, and the sum of the thickness of the substrate 24 with the conductive metal oxide film and the thickness of the resin layer 32 is In the case of 0.1 mm, the thickness of the support plate 31 is 0.4 mm.
  • the thickness of the support plate 31 is preferably 0.2 to 5.0 mm.
  • the thickness of the glass plate is preferably 0.08 mm or more because it is easy to handle and difficult to break. Further, the thickness of the glass plate is preferably 1.0 mm or less because the rigidity is desired so that the glass plate is appropriately bent without being broken when it is peeled after the device member is formed.
  • the difference in average linear expansion coefficient between the substrate 20 and the support plate 31 at 25 to 300 ° C. is preferably 500 ⁇ 10 ⁇ 7 / ° C. or less, more preferably 300 ⁇ 10 ⁇ 7 / ° C. or lower, more preferably 200 ⁇ 10 ⁇ 7 / ° C. or lower. If the difference is too large, the laminated body 10 may be warped severely during heating and cooling in the device manufacturing process, or the substrate 24 with the conductive metal oxide film and the reinforcing slope 30 may be peeled off. When the material of the board
  • the resin layer 32 is fixed on the support plate 31 and is in close contact with the conductive metal oxide film-attached substrate 24 in a peelable manner.
  • the resin layer 32 prevents the displacement of the substrate 24 with the conductive metal oxide film until the peeling operation is performed, and is easily peeled from the substrate 24 with the conductive metal oxide film by the peeling operation.
  • the substrate 24 with a material film is prevented from being damaged by the peeling operation.
  • the size of the resin layer 32 is not particularly limited. The size of the resin layer 32 may be larger or smaller than the substrate 20 and the support plate 31.
  • the surface 321 in contact with the conductive metal oxide film 22 of the resin layer 32 (hereinafter also referred to as “adhesion surface 321”) is not an adhesive force that a general adhesive has, but a van der Waals force between solid molecules. It is preferable to adhere to the surface 221 of the conductive metal oxide film 22 by the force resulting from the above. This is because the substrate 24 with the conductive metal oxide film can be easily peeled off. In this invention, the property which can peel this resin layer surface easily is called peelability.
  • the binding force of the resin layer 32 to the surface of the support plate 31 is greater than the binding force of the resin layer 32 to the surface of the substrate 24 with the conductive metal oxide film (corresponding to the surface 221 of the conductive metal oxide film 22). Relatively high. For this reason, the peel strength between the resin layer 32 and the support plate 31 is higher than the peel strength between the resin layer 32 and the substrate 24 with the conductive metal oxide film.
  • bonding of the resin layer surface to the substrate surface is referred to as adhesion
  • bonding between the resin layer surface and the support plate surface is referred to as fixation. It is preferable that the resin layer 32 and the support plate 31 are bonded by an adhesive force or an adhesive force.
  • the present invention is not limited to this, and the van der Waals force is between the resin layer 32 and the support plate 31 as long as it is relatively higher than the bonding force of the resin layer 32 to the substrate 24 with the conductive metal oxide film. It may be stuck by the force resulting from.
  • the thickness of the resin layer 32 is not particularly limited, but is preferably 1 to 100 ⁇ m, more preferably 5 to 30 ⁇ m, and even more preferably 7 to 20 ⁇ m. This is because when the thickness of the resin layer 32 is within such a range, the resin layer 32 and the substrate 24 with the conductive metal oxide film are sufficiently adhered. In addition, even if bubbles or foreign substances are interposed between the resin layer 32 and the substrate 24 with a conductive metal oxide film, the occurrence of distortion defects in the substrate 24 with a conductive metal oxide film can be suppressed. is there. Further, if the thickness of the resin layer 32 is too thick, it takes time and materials to form the resin layer 32, which is not economical.
  • the resin layer 32 may be composed of two or more layers.
  • “the thickness of the resin layer 32” means the total thickness of all the layers.
  • the kind of resin forming each layer may be different.
  • the resin layer 32 is preferably made of a material having a glass transition point lower than room temperature (about 25 ° C.) or having no glass transition point. This is because it becomes a non-adhesive resin layer and can be more easily peeled off from the substrate 24 with the conductive metal oxide film, and at the same time, the adhesion with the substrate 24 with the conductive metal oxide film becomes sufficient.
  • the resin layer 32 since the resin layer 32 is often heat-treated in the device manufacturing process, the resin layer 32 preferably has heat resistance.
  • the elastic modulus of the resin layer 32 is too high, the adhesion with the substrate 24 with the conductive metal oxide film tends to be low. On the other hand, if the elastic modulus of the resin layer 32 is too low, the peelability is lowered.
  • the type of resin forming the resin layer 32 is not particularly limited.
  • acrylic resin, polyolefin resin, polyurethane resin, or silicone resin can be used.
  • Several types of resins can be mixed and used. Of these, silicone resins are preferred. This is because the silicone resin is excellent in heat resistance and peelability.
  • silicone resins are preferred. This is because the silicone resin is excellent in heat resistance and peelability.
  • the support plate 31 is a glass plate, it is easy to fix to the glass plate by a condensation reaction with a silanol group on the surface of the glass plate. In the state where the silicone resin layer is interposed between the support plate 31 and the substrate 24 with the conductive metal oxide film, the peelability is substantially deteriorated even if the silicon resin layer is processed in the atmosphere at about 200 ° C. for about 1 hour. It is also preferable to not.
  • the resin layer 32 is preferably made of a silicone resin (cured product) used for release paper among silicone resins.
  • a resin layer 32 formed by curing a curable resin composition to be a silicone resin for release paper on the surface of the support plate 31 is preferable because it has excellent peelability. Further, since the flexibility is high, even if foreign matter such as bubbles or dust is mixed between the resin layer 32 and the substrate 24 with the conductive metal oxide film, the distortion defect of the substrate 24 with the conductive metal oxide film is eliminated. Occurrence can be suppressed.
  • the curable silicone that becomes the silicone resin for release paper is classified into a condensation reaction type silicone, an addition reaction type silicone, an ultraviolet curable type silicone, and an electron beam curable type silicone depending on its curing mechanism. Can do.
  • addition reaction type silicone is preferable. This is because the curing reaction is easy, the degree of peelability is good when the resin layer 32 is formed, and the heat resistance is also high.
  • the addition-reactive silicone is a curable composition that contains a main agent and a crosslinking agent and cures in the presence of a catalyst such as a platinum-based catalyst. Curing of the addition reaction type silicone is accelerated by heat treatment.
  • the main component of the addition reaction type silicone is preferably an organopolysiloxane having an alkenyl group (such as a vinyl group) bonded to a silicon atom (that is, an organoalkenylpolysiloxane, preferably a straight chain), such as an alkenyl group. Becomes a cross-linking point.
  • the crosslinking agent for the addition reaction type silicone is preferably an organopolysiloxane having a hydrogen atom (hydrosilyl group) bonded to a silicon atom (that is, an organohydrogenpolysiloxane, preferably a straight chain). A silyl group or the like becomes a crosslinking point.
  • the addition reaction type silicone is cured by an addition reaction between the crosslinking points of the main agent and the crosslinking agent.
  • the curable silicone used as the silicone resin for the release paper is classified into a solvent type, an emulsion type and a solventless type, and any type can be used.
  • a solventless type is preferable. This is because productivity, safety, and environmental characteristics are excellent.
  • it does not contain a solvent that causes foaming at the time of curing when forming the resin layer 32, that is, at the time of heat curing, ultraviolet curing, or electron beam curing, so that bubbles are unlikely to remain in the resin layer 32.
  • curable silicone comprising a silicone resin for release paper
  • KNS-320A as a trade name or model number of the specific commercially available, KS-847 (all manufactured by Shin-Etsu Silicone Co., Ltd.), TPR6700 (manufactured by Momentive Performance Materials manufactured by Japan LLC), a combination of vinyl silicone "8500” (manufactured by Arakawa chemical Industries, Ltd.) and methyl hydrogen polysiloxane "12031” (manufactured by Arakawa chemical Industries, Ltd.), vinyl silicone "11364” (Arakawa chemical Industries, Ltd.
  • KNS-320A, KS-847, and TPR6700 are curable silicones that contain a main agent and a crosslinking agent in advance.
  • the silicone resin forming the resin layer 32 preferably has a property that components such as low molecular weight silicone in the silicone resin layer do not easily migrate to the substrate 24 with the conductive metal oxide film, that is, low silicone migration.
  • the molar ratio of the hydrogen atom bonded to the silicon atom of the organohydrogenpolysiloxane to the alkenyl group of the organoalkenylpolysiloxane is preferably 0.5 to 2.
  • a method for fixing the resin layer 32 on the support plate 31 is not particularly limited, and for example, a method of fixing a film-like resin on the surface of the support plate 31 may be mentioned.
  • the surface of the support plate 31 is subjected to surface modification treatment (priming treatment).
  • the method of fixing on top is mentioned.
  • a chemical method (primer treatment) that improves the fixing force chemically such as a silane coupling agent, or a physical method that increases surface active groups such as SiOH groups and SiO groups such as plasma irradiation and flame (flame) treatment.
  • Examples thereof include a mechanical treatment method that increases the catch by increasing the surface roughness, such as a method and a sandblast treatment.
  • a layer of the curable resin composition that becomes the resin layer 32 is formed on the surface of the support plate 31, and then the resin layer 32 is formed by curing the curable resin composition. It is also possible to form the resin layer 32 fixed to the substrate.
  • the method for forming a layer of the curable resin composition on the surface of the support plate 31 include a method of coating the curable resin composition on the support plate 31. Examples of the coating method include spray coating, die coating, spin coating, dip coating, roll coating, bar coating, screen printing, and gravure coating. From such a method, it can select suitably according to the kind of resin composition.
  • the coating amount is preferably 1 to 100 g / m 2 and more preferably 5 to 20 g / m 2. .
  • the curable resin composition comprising a mixture of an organoalkenylpolysiloxane, an organohydrogenpolysiloxane, and a catalyst is applied to the spray coating method described above. It is applied on the support plate 31 by a known method such as, and then heated and cured. The heat curing conditions vary depending on the blending amount of the catalyst.
  • the reaction is carried out at 50 ° C to 250 ° C, preferably 100 ° C to 200 ° C.
  • the reaction time is 5 to 60 minutes, preferably 10 to 30 minutes.
  • the silicone resin By curing the curable resin composition by heating, the silicone resin is chemically bonded to the support plate 31 during the curing reaction. Further, the silicone resin layer is bonded to the support plate 31 by the anchor effect. By these actions, the silicone resin layer is firmly fixed to the support plate 31.
  • the resin layer fixed to the support plate by the method similar to the above can be formed.
  • the laminate 10 of the present invention is a laminate in which the conductive metal oxide film-attached substrate 24, the support plate 31, and the resin layer 32 exist therebetween.
  • the production method of the laminate of the present invention is not particularly limited.
  • the support plate 31 having the resin layer 32 fixed on the surface is prepared by the above-described method, and then the conductive metal oxide film is provided on the resin layer 32.
  • the substrate 24 is disposed so that the conductive metal oxide film 22 is in close contact with the resin layer 32 in a peelable manner.
  • the method of bringing the resin layer 32 into close contact with the conductive metal oxide film-attached substrate 24 is not particularly limited, and may be a known method.
  • the resin layer 32 and the substrate 24 with the conductive metal oxide film are bonded using a roll or a press.
  • the method of making it crimp is mentioned. It is preferable that the resin layer 32 and the substrate 24 with the conductive metal oxide film are more closely adhered by pressure bonding with a roll or a press. In addition, it is preferable because bubbles mixed between the resin layer 32 and the conductive metal oxide film-coated substrate 24 are relatively easily removed by pressure bonding using a roll or a press.
  • the resin layer 32 When the resin layer 32 is detachably adhered to the substrate 24 with the conductive metal oxide film, the surfaces of the resin layer 32 and the substrate 24 with the conductive metal oxide film that are in contact with each other are sufficiently washed, It is preferable to laminate in an environment with a high degree of cleanliness. Even if a foreign substance is mixed between the resin layer 32 and the substrate 24 with the conductive metal oxide film, the resin layer 32 is deformed, so that the flatness of the surface of the substrate 24 with the conductive metal oxide film is affected. However, the higher the cleanness, the better the flatness.
  • the order of the step of fixing the resin layer 32 on the support plate 31 and the step of removably adhering the resin layer 32 to the substrate 24 with the conductive metal oxide film is not limited. May be.
  • the laminate of the present invention can be used for various applications, for example, for manufacturing electronic components such as a panel for a display device, PV, a thin film secondary battery, and a semiconductor wafer having a circuit formed on the surface, which will be described later. Etc. In this application, the laminate is often exposed (for example, 1 hour or longer) under high temperature conditions (for example, 320 ° C. or higher).
  • the display device panel includes LCD, OLED, electronic paper, plasma display panel, field emission panel, quantum dot LED panel, MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.
  • FIG. 2 is a schematic cross-sectional view of an example of a display device-equipped panel according to the present invention.
  • the display device-equipped panel 40 includes a laminate 10 and a display device panel component member 50.
  • the constituent member 50 of the display device panel refers to a member formed on the glass substrate or a part thereof in a display device such as an LCD or an OLED using a glass substrate.
  • a display device such as LCDs and OLEDs
  • members such as TFT arrays (hereinafter simply referred to as “arrays”), protective layers, color filters, liquid crystals, transparent electrodes made of ITO, etc. on the surface of the substrate. Or a combination of these.
  • a transparent electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and the like formed on a substrate can be used.
  • the manufacturing method of the panel 40 for a display device with a support plate described above is not particularly limited, and the substrate with the conductive metal oxide film of the laminate 10 is a conventionally known method according to the type of constituent members of the panel for a display device. 24.
  • a component member 50 of a display device panel is formed on the surface.
  • a transparent electrode is formed, and a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, etc.
  • the constituent members are vapor-deposited on the surface on which the transparent electrode is formed.
  • Various layers are formed and processed, such as forming and sealing using a sealing plate. Specific examples of the layer formation and processing include film formation processing, vapor deposition processing, sealing plate adhesion processing, and the like.
  • the formation of these constituent members may be part of the formation of all the constituent members necessary for the display device panel. In that case, after the substrate 24 with the conductive metal oxide film on which some of the constituent members are formed is peeled off from the resin layer 32, the remaining constituent members are formed on the substrate 24 with the conductive metal oxide film for display. Manufacture panels for equipment.
  • the display device panel 60 includes a substrate 24 with a conductive metal oxide film and a component member 50 of the display device panel.
  • the display device panel 60 can be obtained by peeling the conductive metal oxide film-attached substrate 24 and the resin layer 32 fixed to the support plate 31 from the display device panel with support plate 40.
  • the constituent members on the substrate 24 with the conductive metal oxide film at the time of peeling are a part of the formation of all the constituent members necessary for the display device panel, the remaining constituent members are then electrically conductive metal oxidized. It forms on the board
  • the method for peeling the conductive metal oxide film 22 and the peelable surface of the resin layer 32 is not particularly limited. Specifically, for example, a sharp blade-like object is inserted into the interface between the conductive metal oxide film 22 and the resin layer 32 to give a trigger for peeling, and then a mixed fluid of water and compressed air is sprayed. Or can be peeled off.
  • substrate 24 with the conductive metal oxide film in the panel 60 for display apparatuses as needed may be separately provided.
  • a display device can be obtained from such a display device panel 60.
  • the display device include an LCD and an OLED.
  • Examples of LCD include TN type, STN type, FE type, TFT type, and MIM type.
  • the operation for obtaining the display device is not particularly limited.
  • the display device can be manufactured by a conventionally known method.
  • the water contact angle was measured using a contact angle meter (manufactured by Cruz, DROP SHAPE ANALYSIS SYSTEM DSA 10Mk2). Further, the surface roughness Ra was measured using an atomic microscope (Seiko Instruments Inc., SPA300 / SPI3800).
  • the peelability after heating of the thin glass laminate is determined by visually observing the surface of the thin glass substrate in contact with the resin layer after peeling the thin glass substrate and the resin layer after heat treatment under the predetermined conditions described later. It was evaluated by doing. Those having no resin layer residue are good, and those having a resin layer residue are bad evaluations.
  • the surface of the peeled thin glass substrate in contact with the resin layer was subjected to plasma irradiation using an atmospheric pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and a polarizing film (manufactured by Nitto Denko Corporation, acrylic type). Adhesives) were affixed and the presence or absence of peeling was evaluated. The case where peeling does not occur indicates that there is no resin layer residue. What peels off indicates that there is a resin layer residue.
  • a supporting glass substrate non-alkali glass, AN100 manufactured by Asahi Glass Co., Ltd.
  • AN100 non-alkali glass, AN100 manufactured by Asahi Glass Co., Ltd.
  • a linear expansion coefficient of 38 ⁇ 10 ⁇ 7 / ° C. was washed with pure water, and further UV washed. And cleaned.
  • solvent-free addition reaction type release paper silicone manufactured by Shin-Etsu Silicone, KNS-320A, viscosity: 0.40 Pa ⁇ s, solubility parameter (SP value): 7. 3)
  • a mixed liquid of 100 parts by mass and 2 parts by mass of a platinum-based catalyst manufactured by Shin-Etsu Silicone Co., Ltd., CAT-PL-56 was coated in a rectangular shape with a size of 705 mm in length and 595 mm in width by a screen printer ( Coating amount 30 g / m 2 ).
  • the silicone for solvent-free addition reaction type release paper is composed of a linear organoalkenylpolysiloxane (main agent) having a vinyl group and a methyl group bonded to a silicon atom, and a hydrogen atom bonded to a silicon atom as a methyl group. And a straight-chain organohydrogenpolysiloxane (crosslinking agent).
  • main agent a linear organoalkenylpolysiloxane having a vinyl group and a methyl group bonded to a silicon atom, and a hydrogen atom bonded to a silicon atom as a methyl group.
  • a straight-chain organohydrogenpolysiloxane crosslinking agent
  • the surface of the thin glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 720 mm, a width of 600 mm, a plate thickness of 0.3 mm, and a linear expansion coefficient of 38 ⁇ 10 ⁇ 7 / ° C. is cleaned with pure water. Then, it was cleaned by UV cleaning. Further, ITO having a thickness of 10 nm (sheet resistance 300 ⁇ / ⁇ ) was formed on the cleaned surface by magnetron sputtering (heating temperature 300 ° C., film forming pressure 5 mTorr, power density 0.5 W / cm 2 ). A glass substrate (a thin glass substrate with a conductive metal oxide film) was obtained. The water contact angle on the surface of the conductive metal oxide film was 45 °. Further, the surface roughness Ra of the conductive metal oxide film was 0.7 nm.
  • both glass substrates were in close contact with the silicone resin layer without generating bubbles, no distortion defects, and good smoothness.
  • the thin glass laminate A1 was subjected to heat treatment at 320 ° C. for 1 hour in a nitrogen atmosphere with atmospheric oxygen of 0.1% or less.
  • a peel test was performed. Specifically, first, the second main surface of the thin glass in the thin glass laminate A1 was fixed on a fixed base. On the other hand, the 2nd main surface of the support glass substrate was adsorb
  • the charged potential on the surface (on the conductive metal oxide film) that was in contact with the resin layer of the peeled thin glass substrate after peeling was +1.2 kV by an electrostatic meter.
  • the surface of the peeled thin glass substrate in contact with the resin layer (on the conductive metal oxide film) is subjected to plasma irradiation using an atmospheric pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and a polarizing film (Nitto) When an electric adhesive (made by Denko Co., Ltd., acrylic pressure-sensitive adhesive) was attached, no peeling occurred.
  • Example 2 In the same manner as in Example 1, the ITO film-forming surface of the thin glass substrate and the silicone resin layer surface of the supporting glass substrate were bonded together by a vacuum press at room temperature to obtain a thin glass laminate A1. Next, a peel test was performed in the same manner as in Example 1 without performing the heat treatment. There was no resin layer residue on the surface of the peeled thin glass substrate in contact with the resin layer (on the conductive metal oxide film). Further, the charged potential on the surface (on the conductive metal oxide film) that was in contact with the resin layer of the peeled thin glass substrate after peeling was +1.3 kV by an electrostatic meter.
  • the surface of the peeled thin glass substrate in contact with the resin layer (on the conductive metal oxide film) is subjected to plasma irradiation using an atmospheric pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and a polarizing film (Nitto) When an electric adhesive (made by Denko Co., Ltd., acrylic pressure-sensitive adhesive) was attached, no peeling occurred.
  • an atmospheric pressure remote plasma device manufactured by Sekisui Chemical Co., Ltd.
  • a polarizing film Nito
  • Example 3 In the same manner as in Example 1, the ITO film-forming surface of the thin glass substrate and the silicone resin layer surface of the supporting glass substrate were bonded together by a vacuum press at room temperature to obtain a thin glass laminate A1. Thereafter, the thin glass laminate A1 was subjected to a heat treatment in the same manner as in Example 1. Next, a peel test was performed. Specifically, first, the second main surface of the thin glass substrate in the thin glass laminate A1 was fixed on a fixed base. On the other hand, the 2nd main surface of the support glass substrate was adsorb
  • a knife having a thickness of 0.4 mm is inserted into the interface between the thin glass substrate and the resin layer, which is one of the four corners of the thin glass laminate A1, so that the thin glass substrate is slightly Was peeled off to give a trigger for peeling.
  • the insertion of the knife was performed while spraying a static eliminating fluid on the interface from an ionizer (manufactured by Keyence).
  • the thinning glass substrate and the supporting glass substrate having the resin layer were peeled off by moving the suction pad away from the fixing base while spraying the static eliminating fluid continuously from the ionizer toward the formed gap.
  • the charged potential on the surface (on the conductive metal oxide film) that was in contact with the resin layer of the peeled thin glass substrate after peeling was +0.1 kV by an electrostatic meter.
  • the surface of the peeled thin glass substrate in contact with the resin layer (on the conductive metal oxide film) is subjected to plasma irradiation using an atmospheric pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and a polarizing film (Nitto) When an electric adhesive (made by Denko Co., Ltd., acrylic pressure-sensitive adhesive) was attached, no peeling occurred.
  • a thin glass substrate (non-alkali glass, AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 760 mm, a width of 640 mm, a plate thickness of 0.3 mm, and a linear expansion coefficient of 38 ⁇ 10 ⁇ 7 / ° C. is washed with pure water, and further UV washed. And cleaned. Furthermore, ITO having a thickness of 10 nm is formed on the cleaned first main surface by a magnetron sputtering method (heating temperature 300 ° C., film forming pressure 5 mTorr, power density 0.5 W / cm 2 ) (sheet resistance 300 ⁇ / ⁇ ).
  • a thin glass substrate (thin glass substrate with a conductive metal oxide film) was obtained.
  • the water contact angle on the surface of the conductive metal oxide film was 45 °.
  • the surface roughness Ra of the conductive metal oxide film was 0.7 nm.
  • a linear organoalkenylpolysiloxane (vinyl silicone, Arakawa Chemical Industries, Ltd.) having vinyl groups at both ends on the conductive metal oxide film surface of the first main surface of the thin glass substrate in the same manner as in Example 1.
  • the surface (first main surface) of the support glass substrate having a length of 720 mm, a width of 600 mm, and a plate thickness of 0.4 mm on the side in contact with the silicone resin was cleaned with pure water, and then cleaned with UV.
  • the first main surface of the carrier substrate and the layer containing uncured curable silicone are bonded together by a vacuum press at room temperature, and allowed to stand at 30 Pa for 5 minutes, and then the layer containing uncured curable silicone A defoaming treatment was performed to obtain a laminate A0 before curing.
  • the length from the outer periphery of the carrier substrate to the outer periphery of the uncured curable resin composition layer was about 15 mm or more.
  • the support glass substrate of the laminated body A0 after curing is fixed on the surface plate to which the positioning jig is attached, and the thin glass substrate is overlapped with one side of the outer peripheral edges of the support glass substrate from the upper surface of the surface plate.
  • the outside of the cut line of the thin glass plate was sandwiched with a clamping jig and cleaved.
  • the cleaved surface of the thin glass substrate is polished and chamfered with a grindstone having a curved surface, and then laminated after cutting. Body A1 was obtained.
  • Example 3 a peel test was performed in the same manner as in Example 3. On the surface (on the conductive metal oxide film) that was peeled off to the thin glass substrate and the supporting glass substrate having the resin layer and was in contact with the resin layer of the peeled thin glass substrate, the residue of the resin layer was There wasn't. In addition, the charged potential on the surface (on the conductive metal oxide film) that was in contact with the resin layer of the peeled thin glass substrate after peeling was +0.1 kV by an electrostatic meter.
  • the surface of the peeled thin glass substrate in contact with the resin layer (on the conductive metal oxide film) is subjected to plasma irradiation using an atmospheric pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and a polarizing film (Nitto) When an electric adhesive (made by Denko Co., Ltd., acrylic pressure-sensitive adhesive) was attached, no peeling occurred.
  • an atmospheric pressure remote plasma device manufactured by Sekisui Chemical Co., Ltd.
  • a polarizing film Nito
  • Example 5 A thin glass laminate B1 was obtained by the same method as in Example 3 except that glass plates made of soda lime glass were used as the thin glass substrate and the supporting glass substrate.
  • Example 3 a peel test was performed in the same manner as in Example 3. On the surface (on the conductive metal oxide film) that was peeled off to the thin glass substrate and the supporting glass substrate having the resin layer and was in contact with the resin layer of the peeled thin glass substrate, the residue of the resin layer was There wasn't. In addition, the charged potential on the surface (on the conductive metal oxide film) that was in contact with the resin layer of the peeled thin glass substrate after peeling was +0.1 kV by an electrostatic meter.
  • the surface of the peeled thin glass substrate in contact with the resin layer (on the conductive metal oxide film) is subjected to plasma irradiation using an atmospheric pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and a polarizing film (Nitto) When an electric adhesive (made by Denko Co., Ltd., acrylic pressure-sensitive adhesive) was attached, no peeling occurred.
  • an atmospheric pressure remote plasma device manufactured by Sekisui Chemical Co., Ltd.
  • a polarizing film Nito
  • Example 6> A thin glass laminate C1 was obtained in the same manner as in Example 3 except that chemically strengthened glass plates were used as the thin glass substrate and the supporting glass substrate.
  • Example 3 a peel test was performed in the same manner as in Example 3. On the surface (on the conductive metal oxide film) that was peeled off to the thin glass substrate and the supporting glass substrate having the resin layer and was in contact with the resin layer of the peeled thin glass substrate, the residue of the resin layer was There wasn't. In addition, the charged potential on the surface (on the conductive metal oxide film) that was in contact with the resin layer of the peeled thin glass substrate after peeling was +0.1 kV by an electrostatic meter.
  • the surface of the peeled thin glass substrate in contact with the resin layer (on the conductive metal oxide film) is subjected to plasma irradiation using an atmospheric pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and a polarizing film (Nitto) When an electric adhesive (made by Denko Co., Ltd., acrylic pressure-sensitive adhesive) was attached, no peeling occurred.
  • an atmospheric pressure remote plasma device manufactured by Sekisui Chemical Co., Ltd.
  • a polarizing film Nito
  • the silicone resin layer and the thin glass substrate were not used between the silicone resin layer and the supporting glass substrate. Peeling occurred between the thin glass substrate with the material film. From this point, the adhesion force between the silicone resin layer and the supporting glass substrate is larger than the adhesion force between the silicone resin layer and the thin glass substrate, in other words, peeling between the silicone resin layer and the supporting glass substrate. It was confirmed that the strength was higher than the peel strength between the silicone resin layer and the thin glass substrate.
  • ⁇ Comparative Example 1> instead of the thin glass substrate with a conductive metal oxide film used in Example 1, a thin glass substrate having a length of 720 mm, a width of 600 mm, a thickness of 0.3 mm, and a linear expansion coefficient of 38 ⁇ 10 ⁇ 7 / ° C. (Asahi Glass Co., Ltd.) A thin glass laminate C1 was obtained by the same procedure as in Example 1 except that AN100) was used. The thin glass laminate C1 does not include a conductive metal oxide film.
  • the surface of the thin glass substrate that is in contact with the silicone resin was cleaned with pure water and then cleaned with UV.
  • the water contact angle of the cleaned thin glass substrate surface was 8 °.
  • the surface roughness Ra of the cleaned thin glass substrate was 0.4 nm.
  • the thin glass substrate to which the resin layer was adhered was irradiated with plasma using an atmospheric pressure remote plasma apparatus (manufactured by Sekisui Chemical Co., Ltd.), but the adhered resin remained without being removed.
  • the charged potential on the surface of the peeled thin glass substrate in contact with the resin layer after peeling was -10.5 kV.
  • a polarizing film manufactured by Nitto Denko Co., Ltd., acrylic adhesive
  • ⁇ Comparative Example 2> A surface of a thin glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 720 mm, a width of 600 mm, a thickness of 0.3 mm, and a linear expansion coefficient of 38 ⁇ 10 ⁇ 7 / ° C. is washed with pure water, and then UV-treated. Washed and cleaned.
  • AN100 manufactured by Asahi Glass Co., Ltd.
  • a chromium oxide film having a thickness of 50 nm and a metal chromium film having a thickness of 100 nm are sequentially formed on the cleaned surface by a magnetron sputtering method (non-heating, film forming pressure 5 mTorr, power density 5 W / cm 2 ), A thin glass substrate (thin glass substrate with a metal chromium film) was obtained.
  • the water contact angle on the surface of the metal chromium film was 25 °.
  • the surface roughness Ra of the metal chromium film was 2.5 nm.
  • Example 2 In the same manner as in Example 1, according to the procedure, the metal chromium film surface of the thin glass substrate and the silicone resin layer surface of the supporting glass substrate were bonded together by a vacuum press at room temperature to obtain a thin glass laminate B1.
  • AN100 manufactured by Asahi Glass Co., Ltd. having a length of 720 mm, a width of 600 mm, a plate thickness of 0.3 mm, and

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)

Abstract

L'invention concerne un corps stratifié comprenant dans l'ordre, une plaque de soutien, une couche de résine et un substrat doté d'un film d'oxyde métallique conducteur contenant au moins un oxyde de métal choisi dans le groupe: indium, étain, zinc, titane et gallium. Afin que le film d'oxyde métallique conducteur soit joint à la couche de résine de façon à en être détachable, le substrat doté d'un film d'oxyde métallique conducteur est placé sur la couche de résine, et la résistance au détachement entre la couche de résine et la plaque de soutien est supérieure à la résistance au détachement entre la couche de résine et le substrat doté d'un film d'oxyde métallique conducteur.
PCT/JP2011/073740 2010-11-05 2011-10-14 Corps stratifié, panneau pour dispositif d'affichage à plaque de soutien, panneau pour dispositif d'affichage et dispositif d'affichage WO2012060199A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2011800531927A CN103201104A (zh) 2010-11-05 2011-10-14 层叠体、带有支撑板的显示装置用面板、显示装置用面板以及显示装置
KR1020137011491A KR20130140707A (ko) 2010-11-05 2011-10-14 적층체, 지지판을 구비한 표시 장치용 패널, 표시 장치용 패널 및 표시 장치
JP2012541800A JP5842821B2 (ja) 2010-11-05 2011-10-14 積層体、支持板付き表示装置用パネル、表示装置用パネル、および表示装置

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JP2010-248294 2010-11-05
JP2010248294 2010-11-05

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013184399A1 (fr) * 2012-06-05 2013-12-12 Guardian Industries Corp. Anode à base de tco aplanie pour des dispositifs oled et/ou ses procédés de réalisation
WO2014073455A1 (fr) * 2012-11-09 2014-05-15 日本電気硝子株式会社 Stratifié de film de verre, et procédé de fabrication de dispositif électronique/électrique
JP2015534528A (ja) * 2012-08-22 2015-12-03 コーニング インコーポレイテッド 可撓性ガラス基板の加工並びに可撓性ガラス基板及びキャリヤ基板を含む基板積層体
WO2016017650A1 (fr) * 2014-08-01 2016-02-04 旭硝子株式会社 Substrats de support avec pellicule inorganique ainsi que stratifié de verre, procédé de fabrication de ceux-ci, et procédé de fabrication de dispositif électronique
US9623637B2 (en) 2014-05-29 2017-04-18 Panasonic Intellectual Property Management Co., Ltd. Supported resin substrate, method for producing the same, and electronic device including resin substrate
US9676662B2 (en) 2014-05-29 2017-06-13 Panasonic Intellectual Property Management Co., Ltd. Supported resin substrate and method for producing the same and electronic device in which the supported resin substrate is used
JP2019117918A (ja) * 2016-10-07 2019-07-18 株式会社半導体エネルギー研究所 積層体

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105517796B (zh) 2013-01-07 2018-03-30 康宁股份有限公司 强化层压玻璃结构
JPWO2015163134A1 (ja) * 2014-04-25 2017-04-13 旭硝子株式会社 ガラス積層体および電子デバイスの製造方法
JP7051446B2 (ja) * 2018-01-10 2022-04-11 株式会社ジャパンディスプレイ 表示装置の製造方法
CN114141810A (zh) * 2021-11-30 2022-03-04 深圳市华星光电半导体显示技术有限公司 显示基板的制备方法、显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293236A (ja) * 1986-06-13 1987-12-19 Asahi Glass Co Ltd 潤滑性と帯電防止性を有する複写機用天板
JPH06344514A (ja) * 1993-06-07 1994-12-20 Teijin Ltd 離型フイルム
WO2007018028A1 (fr) * 2005-08-09 2007-02-15 Asahi Glass Company, Limited Produit stratifié de verre en fine feuille et procédé destiné à fabriquer un affichage employant un tel produit
JP2009242128A (ja) * 2008-03-28 2009-10-22 Asahi Glass Co Ltd 透明導電ガラス基板およびその製造方法
JP2010194874A (ja) * 2009-02-25 2010-09-09 Nippon Electric Glass Co Ltd ガラスフィルム積層体、及び該積層体のガラスロール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293236A (ja) * 1986-06-13 1987-12-19 Asahi Glass Co Ltd 潤滑性と帯電防止性を有する複写機用天板
JPH06344514A (ja) * 1993-06-07 1994-12-20 Teijin Ltd 離型フイルム
WO2007018028A1 (fr) * 2005-08-09 2007-02-15 Asahi Glass Company, Limited Produit stratifié de verre en fine feuille et procédé destiné à fabriquer un affichage employant un tel produit
JP2009242128A (ja) * 2008-03-28 2009-10-22 Asahi Glass Co Ltd 透明導電ガラス基板およびその製造方法
JP2010194874A (ja) * 2009-02-25 2010-09-09 Nippon Electric Glass Co Ltd ガラスフィルム積層体、及び該積層体のガラスロール

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013184399A1 (fr) * 2012-06-05 2013-12-12 Guardian Industries Corp. Anode à base de tco aplanie pour des dispositifs oled et/ou ses procédés de réalisation
US8877548B2 (en) 2012-06-05 2014-11-04 Guardian Industries Corp. Planarized TCO-based anode for OLED devices, and/or methods of making the same
JP2015534528A (ja) * 2012-08-22 2015-12-03 コーニング インコーポレイテッド 可撓性ガラス基板の加工並びに可撓性ガラス基板及びキャリヤ基板を含む基板積層体
WO2014073455A1 (fr) * 2012-11-09 2014-05-15 日本電気硝子株式会社 Stratifié de film de verre, et procédé de fabrication de dispositif électronique/électrique
US9623637B2 (en) 2014-05-29 2017-04-18 Panasonic Intellectual Property Management Co., Ltd. Supported resin substrate, method for producing the same, and electronic device including resin substrate
US9676662B2 (en) 2014-05-29 2017-06-13 Panasonic Intellectual Property Management Co., Ltd. Supported resin substrate and method for producing the same and electronic device in which the supported resin substrate is used
WO2016017650A1 (fr) * 2014-08-01 2016-02-04 旭硝子株式会社 Substrats de support avec pellicule inorganique ainsi que stratifié de verre, procédé de fabrication de ceux-ci, et procédé de fabrication de dispositif électronique
JP2019117918A (ja) * 2016-10-07 2019-07-18 株式会社半導体エネルギー研究所 積層体
JP2019117917A (ja) * 2016-10-07 2019-07-18 株式会社半導体エネルギー研究所 積層体
US11637009B2 (en) 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate

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CN103201104A (zh) 2013-07-10
TW201219207A (en) 2012-05-16
KR20130140707A (ko) 2013-12-24
JP5842821B2 (ja) 2016-01-13
JPWO2012060199A1 (ja) 2014-05-12

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