WO2012039390A1 - 研磨用組成物およびリンス用組成物 - Google Patents
研磨用組成物およびリンス用組成物 Download PDFInfo
- Publication number
- WO2012039390A1 WO2012039390A1 PCT/JP2011/071364 JP2011071364W WO2012039390A1 WO 2012039390 A1 WO2012039390 A1 WO 2012039390A1 JP 2011071364 W JP2011071364 W JP 2011071364W WO 2012039390 A1 WO2012039390 A1 WO 2012039390A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- silicon wafer
- polyoxyethylene
- rinsing
- composition
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 181
- 238000005498 polishing Methods 0.000 title claims abstract description 154
- 235000012431 wafers Nutrition 0.000 claims abstract description 136
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 132
- 239000010703 silicon Substances 0.000 claims abstract description 132
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 131
- -1 polyoxyethylene Polymers 0.000 claims abstract description 126
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims abstract description 89
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 49
- 125000006353 oxyethylene group Chemical group 0.000 claims abstract description 19
- 150000007514 bases Chemical class 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 239000000080 wetting agent Substances 0.000 claims description 25
- 239000006061 abrasive grain Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- 230000000052 comparative effect Effects 0.000 description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 230000007547 defect Effects 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000012141 concentrate Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 239000004094 surface-active agent Substances 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 239000002738 chelating agent Substances 0.000 description 7
- 239000008119 colloidal silica Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 5
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 239000001099 ammonium carbonate Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- NKSOSPOXQKNIKJ-CLFAGFIQSA-N Polyoxyethylene dioleate Polymers CCCCCCCC\C=C/CCCCCCCC(=O)OCCOC(=O)CCCCCCC\C=C/CCCCCCCC NKSOSPOXQKNIKJ-CLFAGFIQSA-N 0.000 description 3
- 229920001214 Polysorbate 60 Polymers 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000004359 castor oil Substances 0.000 description 3
- 235000019438 castor oil Nutrition 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 3
- 238000005342 ion exchange Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 3
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical compound [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 description 2
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 2
- 235000012501 ammonium carbonate Nutrition 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229960005141 piperazine Drugs 0.000 description 2
- 239000011736 potassium bicarbonate Substances 0.000 description 2
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 2
- 235000015497 potassium bicarbonate Nutrition 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 235000011181 potassium carbonates Nutrition 0.000 description 2
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 235000017550 sodium carbonate Nutrition 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- HDTRYLNUVZCQOY-UHFFFAOYSA-N α-D-glucopyranosyl-α-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OC1C(O)C(O)C(O)C(CO)O1 HDTRYLNUVZCQOY-UHFFFAOYSA-N 0.000 description 1
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- SFRLSTJPMFGBDP-UHFFFAOYSA-N 1,2-diphosphonoethylphosphonic acid Chemical compound OP(O)(=O)CC(P(O)(O)=O)P(O)(O)=O SFRLSTJPMFGBDP-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- LQXBZWFNAKZUNM-UHFFFAOYSA-N 16-methyl-1-(16-methylheptadecoxy)heptadecane Chemical compound CC(C)CCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCC(C)C LQXBZWFNAKZUNM-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 1
- KHJWSKNOMFJTDN-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KHJWSKNOMFJTDN-UHFFFAOYSA-N 0.000 description 1
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 1
- WKVMOQXBMPYPGK-UHFFFAOYSA-N 2-[bis(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].OC(=O)CN(CC(O)=O)CC(O)=O WKVMOQXBMPYPGK-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- OOOLSJAKRPYLSA-UHFFFAOYSA-N 2-ethyl-2-phosphonobutanedioic acid Chemical compound CCC(P(O)(O)=O)(C(O)=O)CC(O)=O OOOLSJAKRPYLSA-UHFFFAOYSA-N 0.000 description 1
- SNSWUGOOACKRRJ-UHFFFAOYSA-N 3-phosphonobutane-1,2,3-tricarboxylic acid Chemical class OC(=O)C(P(O)(O)=O)(C)C(C(O)=O)CC(O)=O SNSWUGOOACKRRJ-UHFFFAOYSA-N 0.000 description 1
- MYWGVBFSIIZBHJ-UHFFFAOYSA-N 4-phosphonobutane-1,2,3-tricarboxylic acid Chemical class OC(=O)CC(C(O)=O)C(C(O)=O)CP(O)(O)=O MYWGVBFSIIZBHJ-UHFFFAOYSA-N 0.000 description 1
- WIGIPJGWVLNDAF-UHFFFAOYSA-N 8-methyl-1-(8-methylnonoxy)nonane Chemical compound CC(C)CCCCCCCOCCCCCCCC(C)C WIGIPJGWVLNDAF-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920000858 Cyclodextrin Polymers 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- HDTRYLNUVZCQOY-WSWWMNSNSA-N Trehalose Natural products O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 HDTRYLNUVZCQOY-WSWWMNSNSA-N 0.000 description 1
- MVCMTOJZXPCZNM-UHFFFAOYSA-I [Na+].[Na+].[Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCNCCN Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCNCCN MVCMTOJZXPCZNM-UHFFFAOYSA-I 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- HDTRYLNUVZCQOY-LIZSDCNHSA-N alpha,alpha-trehalose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 HDTRYLNUVZCQOY-LIZSDCNHSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- QRTCASNUSVDIEL-UHFFFAOYSA-N azane;2-[bis(carboxymethyl)amino]acetic acid Chemical compound N.OC(=O)CN(CC(O)=O)CC(O)=O QRTCASNUSVDIEL-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- WPPVJSFNBNUTHQ-UHFFFAOYSA-H hexasodium N'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine hexaacetate Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCNCCNCCN WPPVJSFNBNUTHQ-UHFFFAOYSA-H 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- GTTBQSNGUYHPNK-UHFFFAOYSA-N hydroxymethylphosphonic acid Chemical compound OCP(O)(O)=O GTTBQSNGUYHPNK-UHFFFAOYSA-N 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 description 1
- 229940113162 oleylamide Drugs 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229960003506 piperazine hexahydrate Drugs 0.000 description 1
- AVRVZRUEXIEGMP-UHFFFAOYSA-N piperazine;hexahydrate Chemical compound O.O.O.O.O.O.C1CNCCN1 AVRVZRUEXIEGMP-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 1
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920000053 polysorbate 80 Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Definitions
- the present invention relates to a polishing composition used for polishing a silicon wafer and a rinsing composition used for rinsing a silicon wafer.
- the present invention also relates to a method for polishing a silicon wafer using a polishing composition and a method for rinsing a silicon wafer using a rinsing composition.
- Surface defect inspection equipment is used to manage surface defects on silicon wafers. Defects detected by the surface defect inspection apparatus include foreign matters and residues on the silicon wafer that could not be removed by the polishing process, the rinsing process, and the cleaning process.
- a general surface defect inspection apparatus irradiates the surface of a silicon wafer with light such as laser light, receives the reflected light as a signal, and analyzes it to detect the presence and size of a defect.
- haze When the surface of a silicon wafer finished to a mirror surface after polishing or after polishing and rinsing is irradiated with intense light, clouding may be observed due to irregular reflection resulting from very fine roughness of the silicon wafer surface. This haze is called haze, and haze can be used as a measure of the roughness of the silicon wafer surface. If there is haze on the surface of the silicon wafer, irregularly reflected light generated by the haze may become noise and hinder detection of defects by the surface defect inspection apparatus. For this reason, as the size of the defect to be detected, that is, the size of the defect to be managed becomes smaller, the necessity for improving the haze level is increasing.
- an object of the present invention is to provide a polishing composition and a rinsing composition that can further reduce haze on the surface of a silicon wafer.
- a polishing composition for a silicon wafer comprising water, a basic compound, and a nonionic surfactant comprising a polyoxyethylene adduct.
- the polyoxyethylene adduct has an HLB value of 8 to 15, the polyoxyethylene adduct has a weight average molecular weight of 1400 or less, and the polyoxyethylene adduct has an oxyethylene average addition mole number of 13 or less.
- a polishing composition in which the content of the polyoxyethylene adduct in the polishing composition is 0.00001 to 0.1% by mass.
- the second aspect of the present invention is a rinsing composition for a silicon wafer containing water and a nonionic surfactant comprising a polyoxyethylene adduct, wherein the polyoxyethylene adduct has an HLB value.
- the polyoxyethylene adduct has a weight average molecular weight of 1400 or less, the polyoxyethylene adduct has an oxyethylene average addition mole number of 13 or less, and the polyoxyethylene adduct has a polyoxyethylene adduct having a weight average molecular weight of 13 or less.
- a rinsing composition having an ethylene adduct content of 0.00001 to 0.1% by mass or less.
- a silicon wafer polishing method for polishing a silicon wafer using the polishing composition of the first aspect.
- the fourth aspect of the present invention provides a method for rinsing a silicon wafer in which the polished silicon wafer is rinsed with the rinsing composition of the second aspect.
- haze can be reduced by suppressing the roughness of the silicon wafer surface caused by polishing or rinsing of the silicon wafer. As a result, evaluation of fine defects and product management based on the evaluation are facilitated.
- polishing composition and rinsing composition ⁇ nonionic surfactant comprising polyoxyethylene adduct>
- a nonionic surfactant comprising a polyoxyethylene adduct that is, a polyoxyethylene addition-type nonionic surfactant.
- the HLB value of the polyoxyethylene addition type nonionic surfactant is 8-15.
- the weight average molecular weight of the polyoxyethylene addition type nonionic surfactant is 1400 or less.
- the polyoxyethylene addition-type nonionic surfactant has an average addition mole number of oxyethylene of 13 or less.
- the content of the polyoxyethylene addition type nonionic surfactant in the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.
- the HLB (Hydrophile-Lipophile Balance) value is defined by the Griffin method.
- the HLB value is calculated by 20 ⁇ (total molecular weight of hydrophilic portion) / (total molecular weight of hydrophilic portion and hydrophobic portion).
- the hydrophilic part include an oxyethylene group, a hydroxyl group, a carboxyl group, and an ester
- examples of the hydrophobic part include an oxypropylene group, an oxybutylene group, and an alkyl group.
- the haze level of the polished silicon wafer surface was It was found to depend on the HLB value of the surfactant.
- the surface of a silicon wafer is rinsed with a rinsing composition containing a polyoxyethylene addition type nonionic surfactant, the haze level on the surface of the silicon wafer after rinsing depends on the HLB value of the surfactant.
- the HLB value of the polyoxyethylene addition-type nonionic surfactant to be used needs to be 15 or less, and preferably 13 or less.
- the HLB value of the surfactant is 15 or less, there is an effect in suppressing the roughness of the silicon wafer surface, and the haze on the silicon wafer surface is reduced.
- the HLB value of the polyoxyethylene addition type nonionic surfactant needs to be 8 or more, preferably 10 or more, more preferably 12 or more.
- the polyoxyethylene addition type nonionic surfactant having an HLB value of 8 or more is easily dissolved or dispersed in the polishing composition and the rinsing composition.
- the haze level of the polished silicon wafer surface was found to depend on the molecular weight of the surfactant.
- the haze level on the surface of the silicon wafer after rinsing also depends on the molecular weight of the surfactant.
- the polyoxyethylene addition-type nonionic surfactant to be used must have a weight average molecular weight of 1400 or less, preferably 1000 or less, more preferably 700 or less, and even more preferably. Is 400 or less. If this weight average molecular weight is 1400 or less, a sufficient effect of suppressing the roughness of the silicon wafer surface is obtained, and the haze of the silicon wafer surface is sufficiently reduced.
- the weight average molecular weight of the polyoxyethylene addition type nonionic surfactant is preferably larger than 200, more preferably 300 or more.
- this weight average molecular weight is larger than 200, more specifically, when it is 300 or more, a sufficient effect of suppressing the roughness of the silicon wafer surface can be obtained.
- the oxyethylene average addition mole number of the polyoxyethylene addition type nonionic surfactant is, in principle, an average value of the number of moles of oxyethylene units in one mole of polyoxyethylene adduct.
- a polyoxyethylene adduct having a plurality of polyoxyethylene chains in one molecule such as polyoxyethylene sorbitan monooleate
- the unit of oxyethylene contained in one molecule of the polyoxyethylene adduct The average value obtained by dividing the total number of moles by the number of polyoxyethylene chains contained in the same molecule is defined as the average number of moles of oxyethylene added. That is, it can be said that the average oxyethylene addition mole number of the polyoxyethylene addition-type nonionic surfactant indicates the length of the polyoxyethylene chain contained in the surfactant.
- the haze level of the polished silicon wafer surface was It was found that this also depends on the average number of moles of oxyethylene added to the surfactant.
- the haze level of the surface of the silicon wafer after rinsing is the average addition of oxyethylene of the surfactant. It was found that it also depends on the number of moles.
- the polyoxyethylene addition type nonionic surfactant to be used must have an average oxyethylene addition mole number of 13 or less, preferably 10 or less, more preferably 6 or less. It is. When the average number of moles of oxyethylene added to the polyoxyethylene addition-type nonionic surfactant is 13 or less, there is a sufficient effect of suppressing the surface roughness of the silicon wafer, and the haze on the surface of the silicon wafer is reduced.
- the polyoxyethylene addition type nonionic surfactant preferably has an average addition mole number of oxyethylene of 2 or more, more preferably 4 or more.
- the average oxyethylene addition mole number of the polyoxyethylene addition type nonionic surfactant is 2 or more, more specifically, 4 or more, the haze on the silicon wafer surface is well reduced.
- the polyoxyethylene addition type nonionic surfactant used in the polishing composition and the rinsing composition of the present invention has an HLB value of 8 to 15, a weight average molecular weight of 1400 or less, and an oxyethylene average addition mole number of 13 or less. There is no particular limitation as long as it is present.
- polyoxyethylene addition type nonionic surfactant examples include polyoxyethylene alkyl ether, polyoxyethylene phenyl ether, polyoxyethylene alkyl phenyl ether, polyoxyethylene alkylamine, polyoxyethylene alkylamide, Examples include polyoxyethylene fatty acid esters, polyoxyethylene sorbitan fatty acid esters, polyoxyethylene sorbite fatty acid esters, polyoxyethylene castor oil, and polyoxyethylene rosin esters.
- polyoxyethylene propyl ether polyoxyethylene butyl ether, polyoxyethylene pentyl ether, polyoxyethylene hexyl ether, polyoxyethylene octyl ether, polyoxyethylene-2-ethylhexyl ether, polyoxyethylene nonyl ether, Polyoxyethylene decyl ether, polyoxyethylene isodecyl ether, polyoxyethylene tridecyl ether, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene isostearyl ether, polyoxyethylene oleyl ether , Polyoxyethylene phenyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene Lennonyl phenyl ether, polyoxyethylene dodecyl phenyl ether, polyoxyethylene styrenated phenyl ether, polyoxyethylene laurylamine, polyoxyethylene stearylamine, polyoxyethylene
- the content of the polyoxyethylene addition type nonionic surfactant in the polishing composition and the rinsing composition needs to be 0.00001% by mass or more, preferably 0.00005% by mass or more. .
- the content of the polyoxyethylene addition type nonionic surfactant is 0.00001% by mass or more, a sufficient effect of suppressing the roughness of the silicon wafer surface can be obtained, so that the haze of the silicon wafer surface is well reduced. Is done.
- the content of the polyoxyethylene addition type nonionic surfactant in the polishing composition and the rinsing composition must be 0.1% by mass or less, preferably 0.05% by mass or less. It is.
- the content of the polyoxyethylene addition-type nonionic surfactant is 0.1% by mass or less, there is an advantage that the polishing composition and the rinsing composition do not easily foam.
- the polishing composition according to the present invention contains a basic compound.
- the basic compound in the polishing composition functions to etch and chemically polish the surface of the silicon wafer.
- the basic compound that can be used is not particularly limited as long as it has an action of etching a silicon wafer.
- Specific examples thereof include ammonia, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, hydroxide Tetraethylammonium, ammonium bicarbonate, ammonium carbonate, potassium bicarbonate, potassium carbonate, sodium bicarbonate, sodium carbonate, methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -amino Ethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, anhydrous piperazine, piperazine hexahydrate, 1- (2-aminoethyl) Le) piperazine, and N- methyl piperazine.
- These basic compounds may be used alone or in combination of two or more.
- the basic compound is preferably ammonia, ammonium salt, alkali metal hydroxide, alkali metal salt or quaternary ammonium hydroxide. More specifically, a group consisting of ammonia, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, ammonium hydrogen carbonate, ammonium carbonate, potassium hydrogen carbonate, potassium carbonate, sodium hydrogen carbonate and sodium carbonate. Preferred is ammonia, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide or tetraethylammonium hydroxide, and most preferred is ammonia.
- the content of the basic compound in the polishing composition is preferably 0.0001% by mass or more, and more preferably 0.001% by mass or more.
- the polishing rate of the silicon wafer is improved.
- the content of the basic compound in the polishing composition is preferably 0.5% by mass or less, and more preferably 0.25% by mass or less.
- the content of the basic compound is 0.5% by mass or less, more specifically 0.25% by mass or less, it is easy to obtain a silicon wafer having a small surface roughness.
- the rinsing composition of the present invention may contain a basic compound.
- Specific examples of the basic compound contained in the rinsing composition are the same as those described above as specific examples of the basic compound contained in the polishing composition.
- the basic compound in the rinsing composition is effective for removing residues remaining on the polished silicon wafer surface.
- the content of the basic compound in the rinsing composition is preferably 0.00001% by mass to 0.5% by mass, and more preferably. Is 0.0001 mass% to 0.1 mass%.
- the polishing composition and the rinsing composition of the present invention contain water.
- Water serves to dissolve or disperse other components in the polishing composition or the rinsing composition. It is preferable that water does not contain impurities that inhibit the action of other components as much as possible. Specifically, ion-exchanged water obtained by removing foreign ions through a filter after removing impurity ions using an ion-exchange resin, or pure water, ultrapure water, or distilled water is preferable.
- the polishing composition of the present invention may contain abrasive grains.
- the abrasive grains serve to physically polish the surface of the silicon wafer.
- abrasive grains that can be used include, but are not limited to, silicon carbide, silicon dioxide, alumina, ceria, zirconia, and diamond.
- silicon dioxide such as colloidal silica, fumed silica, or sol-gel silica
- the surface roughness of the silicon wafer tends to be reduced more than when other types of abrasive grains are used.
- colloidal silica or fumed silica, particularly colloidal silica is used, scratches generated on the surface of the silicon wafer due to polishing are preferably reduced.
- These abrasive grains may be used alone or in combination of two or more.
- the abrasive grains used preferably have an average primary particle diameter of 5 to 100 nm determined from a specific surface area measured by a specific surface area measurement method (BET method) of powder by gas adsorption, and preferably 10 to 40 nm. Is more preferable.
- the content of abrasive grains in the polishing composition is preferably 5% by mass or less, and more preferably 1% by mass or less.
- the abrasive content is 5% by mass or less, more specifically 1% by mass or less, the dispersion stability of the polishing composition is improved.
- the polishing composition and the rinsing composition according to the present invention may further contain a wetting agent.
- the wetting agent is effective for keeping the surface of the silicon wafer hydrophilic. When the hydrophilicity of the silicon wafer surface is lowered, the foreign matter adhering to the silicon wafer is likely to remain without being removed by cleaning. If foreign matter remains on the silicon wafer, the surface accuracy of the silicon wafer may be reduced.
- wetting agents examples include cellulose derivatives such as hydroxyethylcellulose, hydroxypropylcellulose, carboxymethylcellulose, vinyl polymers such as polyvinyl alcohol, polyvinylpyrrolidone, poly-N-vinylformamide, starch, cyclodextrin, trehalose, Polysaccharides such as pullulan, and other water-soluble polymers such as polyacrylamide and polymethyl methacrylate are included.
- Cellulose derivatives are preferred because of their high ability to give wettability to the surface of silicon wafers, and they can be easily washed off and do not remain on the silicon wafers, with hydroxyethyl cellulose being particularly preferred.
- the weight average molecular weight of the wetting agent used is preferably 30,000 or more, and more preferably 50,000 or more.
- the wetting agent has a weight average molecular weight of 30,000 or more, more specifically 50,000 or more, the effect of imparting hydrophilicity to the silicon wafer surface is sufficiently exhibited.
- the weight average molecular weight of the wetting agent is preferably 2,000,000 or less, more preferably 1,000,000 or less, and particularly preferably 600,000 or less.
- the weight average molecular weight of the wetting agent is 2,000,000 or less, more specifically 1,000,000 or less, or 600,000 or less, the dispersion stability of the polishing composition and the rinsing composition is improved.
- the content of the wetting agent in the polishing composition is preferably 0.001% by mass or more.
- the content of the wetting agent is 0.001% by mass or more, the effect of imparting hydrophilicity to the silicon wafer surface is sufficiently exhibited.
- the content of the wetting agent in the polishing composition is preferably 1% by mass or less, and more preferably 0.5% by mass or less.
- the content of the wetting agent is 1% by mass or less, more specifically 0.5% by mass or less, the dispersion stability of the polishing composition is improved.
- the content of the wetting agent in the rinsing composition is preferably 0.001% by mass or more.
- the content of the wetting agent is 0.001% by mass or more, the effect of imparting hydrophilicity to the silicon wafer surface is sufficiently exhibited.
- the content of the wetting agent in the rinsing composition is preferably 1% by mass or less, and more preferably 0.5% by mass or less.
- the content of the wetting agent is 1% by mass or less, more specifically 0.5% by mass or less, the cleanliness of the silicon wafer surface is improved.
- the polishing composition and the rinsing composition according to the present invention may further contain other components.
- the polishing composition and the rinsing composition may further contain a chelating agent.
- a chelating agent When the chelating agent is contained, metal contamination of the silicon wafer by the polishing composition or the rinsing composition can be suppressed.
- usable chelating agents include aminocarboxylic acid chelating agents and organic phosphonic acid chelating agents.
- Aminocarboxylic acid chelating agents include ethylenediaminetetraacetic acid, ethylenediaminetetraacetic acid sodium, nitrilotriacetic acid, nitrilotriacetic acid sodium, nitrilotriacetic acid ammonium, hydroxyethylethylenediaminetriacetic acid, hydroxyethylethylenediaminetriacetic acid sodium salt, diethylenetriaminepentaacetic acid, diethylenetriamine Sodium pentaacetate, triethylenetetramine hexaacetate and sodium triethylenetetramine hexaacetate are included.
- Organic phosphonic acid chelating agents include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), nitrilotris (methylenephosphonic acid) , Diethylenetriaminepenta (methylenephosphonic acid), ethane-1,1, -diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1 , 1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4 Tricarboxylic acids, 2-phosphonobutane-2,3,4-tricarboxylic acids and It includes ⁇ - methyl phosphono succinate.
- the polishing composition and the rinsing composition according to the present invention may further contain a known additive such as a preservative and a surfactant as necessary.
- the polishing composition can be suitably used for final polishing of a silicon wafer that requires particularly high surface accuracy, and the rinsing composition is preferably used for rinsing the silicon wafer after final polishing. can do.
- the polishing composition and rinsing composition of the present invention can be manufactured by dissolving or dispersing each component other than the above-described water in water by a conventional method. .
- the order in which each component is added to water is not particularly limited.
- the method of dissolution or dispersion is not particularly limited, and can be carried out by a general method such as stirring using a blade-type stirrer or dispersion using a homogenizer.
- Concentrated liquid for preparing polishing composition and rinsing composition The polishing composition and rinsing composition according to the present invention can be produced as described above. However, it is troublesome to prepare these compositions by preparing necessary components immediately before polishing and rinsing. On the other hand, producing or purchasing a large amount of polishing composition and rinsing composition and storing them until use not only increases the storage cost but also maintains a certain quality of these compositions over a long period of time. It is also disadvantageous because it is difficult. Therefore, the polishing composition or the rinsing composition is stored in the form of a concentrated liquid obtained by removing a part of water, and diluted with water when necessary to prepare the polishing composition or the rinsing composition. May be.
- Each concentrated solution of the polishing composition and the rinsing composition may be divided into two or more packages having different compositions to form a kit. These two or more packages can be mixed when necessary and further diluted with water to prepare a polishing composition or a rinsing composition.
- the water used for dilution is generally available everywhere. Therefore, transportation and storage costs can be reduced by carrying and storing in the form of a concentrated solution or kit having a small volume. Moreover, if it is the form of a concentrate or a kit, there also exists an advantage which storage stability improves.
- the abrasive grains may be stored until use in a package different from the package containing the basic compound and the polyoxyethylene-added nonionic surfactant.
- the package containing the basic compound and the polyoxyethylene addition type nonionic surfactant can be mixed with abrasive grains to be used for the preparation of a polishing composition, or the composition for rinsing without mixing with abrasive grains. It can also be used for the preparation of products.
- the concentration ratio of the concentrate is not particularly limited, but is preferably 2 times or more, more preferably 5 times or more, and further preferably 20 times or more.
- the concentration ratio of the concentrate here refers to the ratio of the total volume of the polishing composition or the rinse composition prepared from the concentrate or the kit to the total volume of the concentrate or the total volume of the kit.
- the concentration of the polyoxyethylene addition type nonionic surfactant in the concentrate is preferably 0.00002 to 10% by mass, more preferably 0.00005 to 1% by mass, and 0.0001 to 0.001. More preferably, it is 2 mass%.
- a polishing composition or a rinsing composition containing a polyoxyethylene addition-type nonionic surfactant at an appropriate concentration can be obtained by diluting the concentrate with water at a predetermined dilution rate.
- polishing Method and Rinse Method The polishing composition according to the present invention can be used in the same apparatus and conditions as those used in normal silicon wafer polishing.
- any type of polishing pad such as a nonwoven fabric type or a suede type may be used.
- the polishing pad to be used may contain abrasive grains or may not contain abrasive grains.
- the temperature at the time of using the polishing composition according to the present invention is not particularly limited, but is preferably 5 to 60 ° C.
- the polishing composition according to the present invention may be used at any stage of so-called multistage polishing. That is, it may be used for polishing for improving the damaged layer of the silicon wafer, or may be used for final polishing for finishing the surface layer of the silicon wafer.
- the polishing time for polishing to improve the damaged layer of the silicon wafer is generally 0.1 to 10 hours, although it depends on the depth of the damaged layer.
- the polishing time of the final polishing for finishing the surface layer of the silicon wafer is usually 30 minutes or less.
- the rinsing composition according to the present invention is used to remove residues remaining on the smooth surface of a silicon wafer after being polished with a polishing composition containing abrasive grains.
- the rinsing composition according to the present invention can be used in the same apparatus and conditions as those used for rinsing a normal silicon wafer.
- the silicon wafer can be rinsed by rotating the pad and / or the silicon wafer while supplying the rinsing composition to the contact surface while the pad is in contact with the surface of the silicon wafer.
- the pad used when rinsing the silicon wafer with the rinsing composition according to the present invention may be of any kind, such as a non-woven fabric type or a suede type, and includes abrasive grains in the pad. Or it may not contain abrasive grains.
- the temperature during use of the rinsing composition according to the present invention is not particularly limited, but is preferably 5 to 60 ° C.
- the rinsing composition according to the present invention is a silicon wafer that has been subjected to polishing and / or final polishing to improve the damaged layer of the silicon wafer using the polishing composition according to the present invention or other polishing composition. Used when rinsing.
- the rinsing composition according to the present invention is used for rinsing the silicon wafer after being polished with the polishing composition according to the present invention, the haze of the silicon wafer after rinsing is greatly reduced.
- the rinsing of the silicon wafer using the rinsing composition according to the present invention can be performed on the silicon wafer that is still attached to the apparatus used for polishing immediately after the polishing of the silicon wafer. In this case, even if a basic compound is contained in the polishing composition remaining on the pad, it is possible to suppress the surface of the silicon wafer from being roughened by the basic compound.
- Examples 1 to 10 and Comparative Examples 1 to 16 A polishing composition of Comparative Example 1 was prepared by mixing abrasive grains, a basic compound and a wetting agent with ion exchange water.
- the polishing compositions of Examples 1 to 10 and Comparative Examples 2 to 16 were prepared by mixing a polyoxyethylene addition type nonionic surfactant or a compound in place thereof with ion-exchanged water together with abrasive grains, a basic compound and a wetting agent. Prepared.
- Table 1 shows details of the polyoxyethylene-added nonionic surfactants or the compounds replacing them in the polishing compositions of Examples 1 to 10 and Comparative Examples 2 to 16.
- each of the polishing compositions of Examples 1 to 7 and Comparative Examples 1 to 16 is 0.18% by mass of colloidal silica having a particle size of 25 nm as abrasive grains and ammonia as a basic compound. 0.005% by mass, 0.01% by mass of hydroxyethyl cellulose having a weight average molecular weight of 250,000 as a wetting agent, and each of the polishing compositions of Examples 8 to 10 has a particle size of 35 nm as abrasive grains.
- the colloidal silica was 0.46% by mass, ammonia was 0.01% by mass as a basic compound, and the wetting agent was 0.018% by mass of hydroxyethyl cellulose having a weight average molecular weight of 250,000.
- the values of the average primary particle diameter of colloidal silica are all measured using a surface area measuring device FlowSorb II 2300 (trade name, manufactured by Micromeritics).
- the surface of the silicon wafer was polished under the conditions described in “Polishing Conditions 1” below.
- the silicon wafer used has a disk shape with a diameter of 200 mm, the conductivity type is P-type, the crystal orientation is ⁇ 100>, the resistivity is 0.1 ⁇ ⁇ cm or more and less than 100 ⁇ ⁇ cm, and Fujimi Incorporated Co., Ltd. It was used after pre-polishing using a polishing slurry (trade name GLANZOX 1104).
- Polishing machine Single wafer polishing machine PNX-322 (Okamoto Machine Tool Manufacturing Co., Ltd.) Polishing load: 15kPa Plate rotation speed: 30rpm Head rotation speed: 30rpm Polishing time: 4 minutes Temperature of polishing composition: 20 ° C Polishing composition supply rate: 0.5 liters / minute (using pouring)
- the surface of the silicon wafer after polishing using each of the polishing compositions of Examples 1 to 10 and Comparative Examples 1 to 16 was measured in the DWO mode of a wafer inspection apparatus “Surfscan SP2” manufactured by KLA-Tencor Corporation. The results of evaluating the haze level on the surface of the silicon wafer after polishing are shown in the “Haze” column of Table 1.
- the surface of a silicon wafer having a conductivity type of P-type, a crystal orientation of ⁇ 100>, a resistivity of 0.1 ⁇ ⁇ cm to less than 100 ⁇ ⁇ cm and a square of 60 mm is polished with a polishing slurry (trade name GLANZOX 1104, manufactured by Fujimi Incorporated). ) was then used for polishing under the conditions described in “Polishing Conditions 2” below using the polishing compositions of Examples 1 to 10 and Comparative Examples 1 to 16.
- the surface of the polished silicon wafer was rinsed with flowing water at a flow rate of 7 L / min for 10 seconds, and then the silicon wafer was placed vertically and allowed to stand.
- Polishing machine Desktop polishing machine EJ-380IN (Nippon Engis Co., Ltd.) Polishing load: 15kPa Plate rotation speed: 30rpm Head rotation speed: 30rpm Polishing time: 1 minute Temperature of polishing composition: 20 ° C Polishing composition supply rate: 0.25 L / min (using run-off)
- Example 11 and Comparative Examples 17 and 18 A rinsing composition of Comparative Example 17 was prepared by mixing a basic compound and a wetting agent with ion-exchanged water.
- a rinsing composition of Example 11 and Comparative Example 18 was prepared by mixing polyoxyethylene addition type nonionic surfactant with ion exchange water together with a basic compound and a wetting agent.
- Table 2 shows details of the polyoxyethylene-added nonionic surfactant in the rinsing compositions of Example 11 and Comparative Examples 17 and 18.
- each rinsing composition of Example 11 and Comparative Examples 17 and 18 has a basic compound of 0.0005% by mass of ammonia and a weight average molecular weight of 250,000 as a wetting agent.
- the hydroxyethyl cellulose was 0.01% by mass.
- Example 11 Using the rinse compositions of Example 11 and Comparative Examples 17 and 18, the surface of the silicon wafer was rinsed under the conditions described in “Rinse Conditions” below.
- the silicon wafer used had a disk shape with a diameter of 200 mm, the conductivity type was P-type, the crystal orientation was ⁇ 100>, and the resistivity was 0.1 ⁇ ⁇ cm or more and less than 100 ⁇ ⁇ cm.
- This silicon wafer was preliminarily polished using a polishing slurry (trade name GLANZOX 1104) manufactured by Fujimi Incorporated, and then using the polishing composition of Example 7 under the conditions described in “Polishing Condition 1” above. It grind
- Rinsing machine Single wafer polishing machine PNX-322 (Okamoto Machine Tool Co., Ltd.) Rinse load: 5 kPa Plate rotation speed: 30rpm Head rotation speed: 30rpm Rinse time: 1 minute. Temperature of rinsing composition: 20 ° C Rinse composition supply rate: 1 liter / min Using the rinsing compositions of Example 11 and Comparative Examples 17 and 18, the surface of the silicon wafer after rinsing was measured in the DWO mode of the wafer inspection apparatus “Surfscan SP2” manufactured by KLA-Tencor Corporation. Table 2 shows the results of evaluating the haze level on the surface of the silicon wafer after rinsing.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Detergent Compositions (AREA)
Abstract
Description
<ポリオキシエチレン付加物からなるノニオン性界面活性剤>
本発明の研磨用組成物およびリンス用組成物は、ポリオキシエチレン付加物からなるノニオン性界面活性剤、すなわちポリオキシエチレン付加型ノニオン性界面活性剤を含むことを一つの特徴とする。ポリオキシエチレン付加型ノニオン性界面活性剤のHLB値は8~15である。ポリオキシエチレン付加型ノニオン性界面活性剤の重量平均分子量は1400以下である。ポリオキシエチレン付加型ノニオン性界面活性剤のオキシエチレン平均付加モル数は13以下である。研磨用組成物中およびリンス用組成物中のポリオキシエチレン付加型ノニオン性界面活性剤の含有量は0.00001~0.1質量%である。
本発明による研磨用組成物は塩基性化合物を含む。研磨用組成物中の塩基性化合物はシリコンウェーハの表面をエッチングして化学的に研磨する働きをする。
本発明の研磨用組成物およびリンス用組成物は水を含む。水は、研磨用組成物中またはリンス用組成物中の他の成分を溶解または分散させる働きをする。水は、他の成分の作用を阻害する不純物をできるだけ含有しないことが好ましい。具体的には、イオン交換樹脂を使って不純物イオンを除去した後にフィルタを通して異物を除去したイオン交換水、あるいは純水、超純水または蒸留水が好ましい。
本発明の研磨用組成物は砥粒を含んでもよい。砥粒はシリコンウェーハの表面を物理的に研磨する働きをする。
本発明による研磨用組成物およびリンス用組成物は濡れ剤をさらに含んでもよい。濡れ剤は、シリコンウェーハの表面を親水性に保つのに効果的である。シリコンウェーハ表面の親水性が低下すると、シリコンウェーハ上に付着した異物が洗浄によって除去されずに残留をしやすい。シリコンウェーハ上に異物が残留すると、シリコンウェーハの表面精度が低下する場合がある。
本発明の研磨用組成物およびリンス用組成物は、上述した水以外の各成分を常法により水に溶解または分散させることにより製造することができる。各成分を水に加える順序は特に限定されない。溶解または分散の方法も特に限定されず、例えば翼式攪拌機を使った攪拌やホモジナイザーを使った分散のような一般的な方法で行うことができる。
本発明による研磨用組成物およびリンス用組成物は、前記したようにして製造することができる。しかし、研磨やリンスを行う直前に、必要な成分をそれぞれ準備してこれらの組成物を調製するのは煩雑である。一方、研磨用組成物およびリンス用組成物を多量に製造または購入して使用まで貯蔵しておくことは、貯蔵コストがかさむだけでなく、これら組成物の一定の品質を長期にわたり維持するのが困難であることからも不利がある。そこで、研磨用組成物またはリンス用組成物の組成から一部の水を除いた濃縮液の形態で貯蔵をし、必要時に水希釈して研磨用組成物またはリンス用組成物を調製するようにしてもよい。研磨用組成物およびリンス用組成物の各濃縮液は組成の異なる2以上のパッケージに分割してキットとされていてもよい。この2以上のパッケージは必要時に混合してさらに水希釈することにより研磨用組成物またはリンス用組成物を調製することができる。希釈に使用する水は一般にどこでも入手が可能である。したがって、容積の小さい濃縮液またはキットの形態で運搬および貯蔵を行うことで、運搬コストおよび貯蔵コストを低減することができる。また、濃縮液またはキットの形態であれば、保存安定性が向上する利点もある。
本発明による研磨用組成物は、通常のシリコンウェーハの研磨で用いられるのと同じ装置および条件で使用することができる。
砥粒、塩基性化合物および濡れ剤をイオン交換水に混合して比較例1の研磨用組成物を調製した。ポリオキシエチレン付加型ノニオン性界面活性剤またはそれに代わる化合物を、砥粒、塩基性化合物および濡れ剤とともにイオン交換水に混合して実施例1~10および比較例2~16の研磨用組成物を調製した。実施例1~10および比較例2~16の各研磨用組成物中のポリオキシエチレン付加型ノニオン性界面活性剤またはそれに代わる化合物の詳細を表1に示す。なお、比較例2,3で使用したポリエチレングリコールは、ポリオキシエチレン付加型ノニオン性界面活性剤には該当しない。表1には示していないが、実施例1~7および比較例1~16の各研磨用組成物は、砥粒として粒子径が25nmのコロイダルシリカを0.18質量%、塩基性化合物としてアンモニアを0.005質量%、濡れ剤として重量平均分子量が250,000のヒドロキシエチルセルロースを0.01質量%含有し、実施例8~10の各研磨用組成物は、砥粒として粒子径が35nmのコロイダルシリカを0.46質量%、塩基性化合物としてアンモニアを0.01質量%、濡れ剤として重量平均分子量が250,000のヒドロキシエチルセルロースを0.018質量%含有するものとした。コロイダルシリカの平均一次粒子径の値はいずれも、表面積測定装置FlowSorb II 2300(商品名、Micromeritics社製)を使って測定したものである。
研磨機: 枚葉研磨機PNX-322(株式会社岡本工作機械製作所製)
研磨荷重: 15kPa
定盤回転数: 30rpm
ヘッド回転数: 30rpm
研磨時間: 4分間
研磨用組成物の温度: 20℃
研磨用組成物の供給速度: 0.5リットル/分(掛け流し使用)
実施例1~10および比較例1~16の各研磨用組成物を用いて研磨後のシリコンウェーハの表面を、ケーエルエー・テンコール社製のウェーハ検査装置“Surfscan SP2”のDWOモードで計測し、それに基づいて研磨後のシリコンウェーハ表面のヘイズレベルを評価した結果を表1の“ヘイズ”欄に示す。同欄中、“A”はポリオキシエチレン付加型ノニオン性界面活性剤を含有していない比較例1の場合と比較してヘイズレベルが10%以上低減されたことを示し、“B”はそれが10%未満であったこと、“C”は比較例1と比較してヘイズレベルの低減が確認されなかったことを示す。なお、比較例16に関しては、ポリオキシエチレンジオレイン酸エステルの溶解不良のため、ヘイズレベルの評価を実施できなかった。
研磨機: 卓上研磨機EJ-380IN(日本エンギス株式会社製)
研磨荷重: 15kPa
定盤回転数: 30rpm
ヘッド回転数: 30rpm
研磨時間: 1分間
研磨用組成物の温度: 20℃
研磨用組成物の供給速度: 0.25 L/分 (掛け流し使用)
塩基性化合物および濡れ剤をイオン交換水に混合して比較例17のリンス用組成物を調製した。ポリオキシエチレン付加型ノニオン性界面活性剤を、塩基性化合物および濡れ剤とともにイオン交換水に混合して実施例11および比較例18のリンス用組成物を調製した。実施例11および比較例17,18の各リンス用組成物中のポリオキシエチレン付加型ノニオン性界面活性剤の詳細を表2に示す。なお、表2には示していないが、実施例11および比較例17,18の各リンス用組成物は、塩基性化合物としてアンモニアを0.0005質量%、濡れ剤として重量平均分子量が250,000のヒドロキシエチルセルロースを0.01質量%含有するものとした。
リンス機: 枚葉研磨機PNX-322(株式会社岡本工作機械製作所製)
リンス荷重: 5kPa
定盤回転数: 30rpm
ヘッド回転数: 30rpm
リンス時間: 1分間.
リンス用組成物の温度: 20℃
リンス用組成物の供給速度: 1リットル/分(掛け流し使用)
実施例11および比較例17,18の各リンス用組成物を用いてリンス後のシリコンウェーハの表面を、ケーエルエー・テンコール社製のウェーハ検査装置“Surfscan SP2”のDWOモードで計測し、それに基づいてリンス後のシリコンウェーハ表面のヘイズレベルを評価した結果を表2に示す。同欄中、“A”はポリオキシエチレン付加型ノニオン性界面活性剤を含有していない比較例17の場合と比較してヘイズレベルが5%以上低減されたことを示し、“B”はそれが5%未満であったこと、“C”は比較例17と比較してヘイズレベルの低減が確認されなかったことを示す。
先に説明した実施例1~10の研磨用組成物および実施例11のリンス用組成物はそれぞれ、室温で6ヵ月間保存されていた濃縮液をイオン交換水で20倍希釈することにより調製したものである。これに対し、濃縮液を水希釈して調製するのではなく、必要な成分をそれぞれ準備してそれらを混合することにより実施例1~10の研磨用組成物と同じ組成を有する研磨用組成物および実施例11のリンス用組成物と同じ組成を有するリンス用組成物を調製し、調製後すぐにそれらの研磨用組成物およびリンス用組成物を用いて実施例1~11の場合と同様にしてヘイズレベルおよび濡れ性の評価を行なったところ、得られた結果は実施例1~11の場合と同等であった。
Claims (8)
- 水と、塩基性化合物と、ポリオキシエチレン付加物からなるノニオン性界面活性剤とを含むシリコンウェーハ用研磨用組成物であって、
前記ポリオキシエチレン付加物のHLB値が8~15であり、
前記ポリオキシエチレン付加物の重量平均分子量が1400以下であり、
前記ポリオキシエチレン付加物のオキシエチレン平均付加モル数が13以下であり、
研磨用組成物中の前記ポリオキシエチレン付加物の含有量が0.00001~0.1質量%であることを特徴とする研磨用組成物。 - 砥粒をさらに含む、請求項1に記載の研磨用組成物。
- 濡れ剤をさらに含む、請求項1または2に記載の研磨用組成物。
- 水と、ポリオキシエチレン付加物からなるノニオン性界面活性剤とを含むシリコンウェーハ用リンス用組成物であって、
前記ポリオキシエチレン付加物のHLB値が8~15であり、
前記ポリオキシエチレン付加物の重量平均分子量が1400以下であり、
前記ポリオキシエチレン付加物のオキシエチレン平均付加モル数が13以下であり、
リンス用組成物中の前記ポリオキシエチレン付加物の含有量が0.00001~0.1質量%であることを特徴とするリンス用組成物。 - 塩基性化合物をさらに含む、請求項4に記載のリンス用組成物。
- 濡れ剤をさらに含む、請求項4または5に記載のリンス用組成物。
- 請求項1~3のいずれか一項に記載の研磨用組成物を用いてシリコンウェーハを研磨することを特徴とするシリコンウェーハの研磨方法。
- 研磨後のシリコンウェーハを、請求項4~6のいずれか一項に記載のリンス用組成物を用いてリンスすることを特徴とするシリコンウェーハのリンス方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020137010085A KR101719029B1 (ko) | 2010-09-24 | 2011-09-20 | 연마용 조성물 및 린스용 조성물 |
SG2013020177A SG188597A1 (en) | 2010-09-24 | 2011-09-20 | Composition for polishing and composition for rinsing |
US13/824,149 US8974691B2 (en) | 2010-09-24 | 2011-09-20 | Composition for polishing and composition for rinsing |
JP2012535032A JP6040029B2 (ja) | 2010-09-24 | 2011-09-20 | 研磨用組成物及び研磨方法 |
DE112011103185T DE112011103185T5 (de) | 2010-09-24 | 2011-09-20 | Polierzusammensetzung und Spülzusammensetzung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010213382 | 2010-09-24 | ||
JP2010-213382 | 2010-09-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012039390A1 true WO2012039390A1 (ja) | 2012-03-29 |
Family
ID=45873876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/071364 WO2012039390A1 (ja) | 2010-09-24 | 2011-09-20 | 研磨用組成物およびリンス用組成物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8974691B2 (ja) |
JP (3) | JP6040029B2 (ja) |
KR (1) | KR101719029B1 (ja) |
DE (1) | DE112011103185T5 (ja) |
SG (1) | SG188597A1 (ja) |
TW (1) | TWI546352B (ja) |
WO (1) | WO2012039390A1 (ja) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014082237A (ja) * | 2012-10-12 | 2014-05-08 | Fujimi Inc | 研磨用組成物の製造方法及び研磨用組成物 |
JP2014130965A (ja) * | 2012-12-28 | 2014-07-10 | Kao Corp | シリコンウェーハ用研磨液組成物 |
JP2014207281A (ja) * | 2013-04-11 | 2014-10-30 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
WO2015107992A1 (ja) * | 2014-01-15 | 2015-07-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物製造用キットおよびその利用 |
WO2015146282A1 (ja) * | 2014-03-28 | 2015-10-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2015194136A1 (ja) * | 2014-06-18 | 2015-12-23 | 株式会社フジミインコーポレーテッド | シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット |
JP2017107905A (ja) * | 2015-12-07 | 2017-06-15 | 日立化成株式会社 | 洗浄液及び洗浄方法 |
CN107001916A (zh) * | 2014-12-05 | 2017-08-01 | 3M创新有限公司 | 磨料组合物 |
WO2017150118A1 (ja) | 2016-02-29 | 2017-09-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびこれを用いた研磨方法 |
WO2017169154A1 (ja) * | 2016-03-30 | 2017-10-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法 |
WO2018079675A1 (ja) * | 2016-10-28 | 2018-05-03 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
JP2018078287A (ja) * | 2016-10-28 | 2018-05-17 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
WO2018116631A1 (ja) * | 2016-12-22 | 2018-06-28 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
WO2018163781A1 (ja) * | 2017-03-06 | 2018-09-13 | 株式会社フジミインコーポレーテッド | 表面処理組成物、およびその製造方法、ならびに表面処理組成物を用いた表面処理方法および半導体基板の製造方法 |
JP2019068087A (ja) * | 2014-12-29 | 2019-04-25 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | エッチング液及びその使用方法 |
WO2020013332A1 (ja) | 2018-07-13 | 2020-01-16 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
JP2020502784A (ja) * | 2016-12-14 | 2020-01-23 | キャボット マイクロエレクトロニクス コーポレイション | 化学機械平坦化基板から残留物を除去するための組成物及び方法 |
JP2020109864A (ja) * | 2020-03-16 | 2020-07-16 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
JP2020167237A (ja) * | 2019-03-28 | 2020-10-08 | 株式会社フジミインコーポレーテッド | リンス用組成物およびリンス方法 |
JP2021057467A (ja) * | 2019-09-30 | 2021-04-08 | 株式会社フジミインコーポレーテッド | シリコンウェーハ用研磨用組成物 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2722872A4 (en) * | 2011-06-14 | 2015-04-29 | Fujimi Inc | POLISHING COMPOSITION |
JPWO2016031485A1 (ja) * | 2014-08-29 | 2017-06-22 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨用組成物の製造方法 |
US20200017719A1 (en) * | 2017-03-06 | 2020-01-16 | Fujimi Incorporated | Composition for surface treatment, method for producing the same, surface treatment method using composition for surface treatment, and method for producing semiconductor substrate |
KR102676957B1 (ko) * | 2019-04-02 | 2024-06-19 | 가부시끼가이샤 레조낙 | 연마액, 연마액 세트, 연마 방법 및 결함 억제 방법 |
JP7340969B2 (ja) * | 2019-06-28 | 2023-09-08 | 東京応化工業株式会社 | シリコンエッチング液、シリコンエッチング方法、及びシリコンフィン構造体の製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04291722A (ja) * | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー表面のヘイズ防止方法 |
JP2007073548A (ja) * | 2005-09-02 | 2007-03-22 | Fujimi Inc | 研磨方法 |
JP2007214205A (ja) * | 2006-02-07 | 2007-08-23 | Fujimi Inc | 研磨用組成物 |
JP2008182221A (ja) * | 2006-12-28 | 2008-08-07 | Sanyo Chem Ind Ltd | 半導体基板用洗浄剤 |
JP2009510115A (ja) * | 2005-09-29 | 2009-03-12 | アリーナ ファーマシューティカルズ, インコーポレイテッド | 5−ht2aセロトニン受容体に関連する疾患の治療に有用な5−ht2aセロトニン受容体モジュレーターの薬学的組成物 |
JP2009105299A (ja) * | 2007-10-05 | 2009-05-14 | Mitsubishi Chemicals Corp | 半導体デバイス用基板の洗浄液 |
JP2009530325A (ja) * | 2006-03-24 | 2009-08-27 | エルテーエス ローマン テラピー−ジステーメ アーゲー | ポリラクチドナノ粒子 |
JP2010129941A (ja) * | 2008-12-01 | 2010-06-10 | Fujifilm Corp | 金属用研磨液、および化学的機械的研磨方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04291724A (ja) * | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハーの研摩方法 |
JP3810588B2 (ja) * | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2000114212A (ja) * | 1998-10-05 | 2000-04-21 | Asahi Denka Kogyo Kk | シリコンウェハー用研磨助剤 |
JP3996314B2 (ja) * | 1999-03-26 | 2007-10-24 | 三洋化成工業株式会社 | 研磨用砥粒分散剤および研磨用スラリー |
JP2001240850A (ja) * | 2000-02-29 | 2001-09-04 | Sanyo Chem Ind Ltd | 研磨用砥粒分散剤および研磨用スラリー |
JP4085356B2 (ja) * | 2001-09-28 | 2008-05-14 | 株式会社Sumco | 半導体ウェーハの洗浄乾燥方法 |
JP4045180B2 (ja) * | 2002-12-03 | 2008-02-13 | Azエレクトロニックマテリアルズ株式会社 | リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法 |
KR100516886B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
JP4668528B2 (ja) | 2003-09-05 | 2011-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2005103684A (ja) * | 2003-09-29 | 2005-04-21 | Mimasu Semiconductor Industry Co Ltd | コロイド分散型ラッピング剤及びその製造方法 |
JP2005105068A (ja) * | 2003-09-29 | 2005-04-21 | Mimasu Semiconductor Industry Co Ltd | ラッピングスラリー及びウェーハの加工方法 |
JP3892846B2 (ja) * | 2003-11-27 | 2007-03-14 | 株式会社東芝 | Cmp用スラリー、研磨方法、および半導体装置の製造方法 |
JP2008277723A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
JP5428200B2 (ja) * | 2007-05-18 | 2014-02-26 | 三菱化学株式会社 | 半導体デバイス用基板洗浄液、半導体デバイス用基板の洗浄方法及び半導体デバイス用基板の製造方法 |
US20110277524A1 (en) * | 2008-12-25 | 2011-11-17 | Kobe Steel, Ltd. | Lubricating oil for use in hot-rolling oil and method for manufacturing hot-rolled sheet |
-
2011
- 2011-09-20 KR KR1020137010085A patent/KR101719029B1/ko active IP Right Grant
- 2011-09-20 JP JP2012535032A patent/JP6040029B2/ja active Active
- 2011-09-20 SG SG2013020177A patent/SG188597A1/en unknown
- 2011-09-20 US US13/824,149 patent/US8974691B2/en active Active
- 2011-09-20 WO PCT/JP2011/071364 patent/WO2012039390A1/ja active Application Filing
- 2011-09-20 DE DE112011103185T patent/DE112011103185T5/de active Pending
- 2011-09-21 TW TW100133885A patent/TWI546352B/zh active
-
2015
- 2015-11-27 JP JP2015231743A patent/JP6193959B2/ja active Active
-
2016
- 2016-09-14 JP JP2016179471A patent/JP6240729B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04291722A (ja) * | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー表面のヘイズ防止方法 |
JP2007073548A (ja) * | 2005-09-02 | 2007-03-22 | Fujimi Inc | 研磨方法 |
JP2009510115A (ja) * | 2005-09-29 | 2009-03-12 | アリーナ ファーマシューティカルズ, インコーポレイテッド | 5−ht2aセロトニン受容体に関連する疾患の治療に有用な5−ht2aセロトニン受容体モジュレーターの薬学的組成物 |
JP2007214205A (ja) * | 2006-02-07 | 2007-08-23 | Fujimi Inc | 研磨用組成物 |
JP2009530325A (ja) * | 2006-03-24 | 2009-08-27 | エルテーエス ローマン テラピー−ジステーメ アーゲー | ポリラクチドナノ粒子 |
JP2008182221A (ja) * | 2006-12-28 | 2008-08-07 | Sanyo Chem Ind Ltd | 半導体基板用洗浄剤 |
JP2009105299A (ja) * | 2007-10-05 | 2009-05-14 | Mitsubishi Chemicals Corp | 半導体デバイス用基板の洗浄液 |
JP2010129941A (ja) * | 2008-12-01 | 2010-06-10 | Fujifilm Corp | 金属用研磨液、および化学的機械的研磨方法 |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014082237A (ja) * | 2012-10-12 | 2014-05-08 | Fujimi Inc | 研磨用組成物の製造方法及び研磨用組成物 |
JP2014130965A (ja) * | 2012-12-28 | 2014-07-10 | Kao Corp | シリコンウェーハ用研磨液組成物 |
JP2014207281A (ja) * | 2013-04-11 | 2014-10-30 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
WO2015107992A1 (ja) * | 2014-01-15 | 2015-07-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物製造用キットおよびその利用 |
JP2015155523A (ja) * | 2014-01-15 | 2015-08-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物製造用キットおよびその利用 |
CN106133104A (zh) * | 2014-03-28 | 2016-11-16 | 福吉米株式会社 | 研磨用组合物 |
WO2015146282A1 (ja) * | 2014-03-28 | 2015-10-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2015189899A (ja) * | 2014-03-28 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US10144907B2 (en) | 2014-03-28 | 2018-12-04 | Fujimi Incorporated | Polishing composition |
JP2016004953A (ja) * | 2014-06-18 | 2016-01-12 | 株式会社フジミインコーポレーテッド | シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット |
TWI660417B (zh) * | 2014-06-18 | 2019-05-21 | 日商福吉米股份有限公司 | 矽晶圓之研磨方法、研磨用組成物及研磨用組成物套組 |
WO2015194136A1 (ja) * | 2014-06-18 | 2015-12-23 | 株式会社フジミインコーポレーテッド | シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット |
CN107001916A (zh) * | 2014-12-05 | 2017-08-01 | 3M创新有限公司 | 磨料组合物 |
CN107001916B (zh) * | 2014-12-05 | 2019-01-22 | 3M创新有限公司 | 磨料组合物 |
JP2019068087A (ja) * | 2014-12-29 | 2019-04-25 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | エッチング液及びその使用方法 |
JP2017107905A (ja) * | 2015-12-07 | 2017-06-15 | 日立化成株式会社 | 洗浄液及び洗浄方法 |
WO2017150118A1 (ja) | 2016-02-29 | 2017-09-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびこれを用いた研磨方法 |
US11332640B2 (en) | 2016-02-29 | 2022-05-17 | Fujimi Incorporated | Polishing composition and polishing method using same |
JPWO2017169154A1 (ja) * | 2016-03-30 | 2019-02-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法 |
TWI724117B (zh) * | 2016-03-30 | 2021-04-11 | 日商福吉米股份有限公司 | 研磨用組成物套組、前研磨用組成物及矽晶圓之研磨方法 |
WO2017169154A1 (ja) * | 2016-03-30 | 2017-10-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法 |
CN109844908B (zh) * | 2016-10-28 | 2023-06-06 | 花王株式会社 | 硅晶片用冲洗剂组合物 |
JP2018078287A (ja) * | 2016-10-28 | 2018-05-17 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
WO2018079675A1 (ja) * | 2016-10-28 | 2018-05-03 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
CN109844908A (zh) * | 2016-10-28 | 2019-06-04 | 花王株式会社 | 硅晶片用冲洗剂组合物 |
JP7061862B2 (ja) | 2016-10-28 | 2022-05-02 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
JP7210444B2 (ja) | 2016-12-14 | 2023-01-23 | シーエムシー マテリアルズ,インコーポレイティド | 化学機械平坦化基板から残留物を除去するための組成物及び方法 |
JP2020502784A (ja) * | 2016-12-14 | 2020-01-23 | キャボット マイクロエレクトロニクス コーポレイション | 化学機械平坦化基板から残留物を除去するための組成物及び方法 |
US10865368B2 (en) | 2016-12-22 | 2020-12-15 | Kao Corporation | Rinse agent composition for silicon wafers |
WO2018116631A1 (ja) * | 2016-12-22 | 2018-06-28 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
US11028340B2 (en) | 2017-03-06 | 2021-06-08 | Fujimi Incorporated | Composition for surface treatment, method for producing the same, surface treatment method using composition for surface treatment, and method for producing semiconductor substrate |
WO2018163781A1 (ja) * | 2017-03-06 | 2018-09-13 | 株式会社フジミインコーポレーテッド | 表面処理組成物、およびその製造方法、ならびに表面処理組成物を用いた表面処理方法および半導体基板の製造方法 |
JPWO2018163781A1 (ja) * | 2017-03-06 | 2019-12-26 | 株式会社フジミインコーポレーテッド | 表面処理組成物、およびその製造方法、ならびに表面処理組成物を用いた表面処理方法および半導体基板の製造方法 |
JP7060573B2 (ja) | 2017-03-06 | 2022-04-26 | 株式会社フジミインコーポレーテッド | 表面処理組成物、およびその製造方法、ならびに表面処理組成物を用いた表面処理方法および半導体基板の製造方法 |
WO2020013332A1 (ja) | 2018-07-13 | 2020-01-16 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
KR20210032414A (ko) | 2018-07-13 | 2021-03-24 | 씨엠씨 마테리알즈 가부시키가이샤 | 화학 기계 연마 조성물, 린스 조성물, 화학 기계 연마 방법 및 린스 방법 |
JP7166819B2 (ja) | 2018-07-13 | 2022-11-08 | Cmcマテリアルズ株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
JP2020013824A (ja) * | 2018-07-13 | 2020-01-23 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
JP2020167237A (ja) * | 2019-03-28 | 2020-10-08 | 株式会社フジミインコーポレーテッド | リンス用組成物およびリンス方法 |
JP7356248B2 (ja) | 2019-03-28 | 2023-10-04 | 株式会社フジミインコーポレーテッド | リンス用組成物およびリンス方法 |
JP2021057467A (ja) * | 2019-09-30 | 2021-04-08 | 株式会社フジミインコーポレーテッド | シリコンウェーハ用研磨用組成物 |
JP7349309B2 (ja) | 2019-09-30 | 2023-09-22 | 株式会社フジミインコーポレーテッド | シリコンウェーハ用研磨用組成物 |
JP2020109864A (ja) * | 2020-03-16 | 2020-07-16 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
Also Published As
Publication number | Publication date |
---|---|
TW201226492A (en) | 2012-07-01 |
SG188597A1 (en) | 2013-04-30 |
DE112011103185T5 (de) | 2013-07-18 |
KR20130111558A (ko) | 2013-10-10 |
JP2016040848A (ja) | 2016-03-24 |
KR101719029B1 (ko) | 2017-03-22 |
JPWO2012039390A1 (ja) | 2014-02-03 |
JP6240729B2 (ja) | 2017-11-29 |
JP2017034264A (ja) | 2017-02-09 |
TWI546352B (zh) | 2016-08-21 |
JP6040029B2 (ja) | 2016-12-07 |
US8974691B2 (en) | 2015-03-10 |
US20130183826A1 (en) | 2013-07-18 |
JP6193959B2 (ja) | 2017-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6240729B2 (ja) | 研磨用組成物及び研磨方法 | |
JP5891174B2 (ja) | シリコンウェーハ研磨用組成物及びそれを用いた研磨方法 | |
JP6279593B2 (ja) | 研磨用組成物、研磨用組成物の製造方法およびシリコンウェーハ製造方法 | |
JP6185432B2 (ja) | シリコンウェーハ研磨用組成物 | |
JP6110681B2 (ja) | 研磨用組成物、研磨用組成物製造方法および研磨物製造方法 | |
JP6705757B2 (ja) | シリコンウェーハの研磨方法および表面処理組成物 | |
JP2017101248A (ja) | 研磨用組成物、研磨用組成物製造方法および研磨物製造方法 | |
JP2017183359A (ja) | シリコン基板の研磨方法および研磨用組成物セット | |
JP6691774B2 (ja) | 研磨用組成物およびその製造方法 | |
JP5859055B2 (ja) | シリコンウェーハ研磨用組成物 | |
JP6348927B2 (ja) | シリコンウェーハ研磨用組成物 | |
JP6562605B2 (ja) | 研磨用組成物の製造方法 | |
JP6305674B2 (ja) | 研磨用組成物及び半導体基板の製造方法 | |
WO2014024930A1 (ja) | 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法 | |
JP6122783B2 (ja) | 研磨用組成物及び半導体基板の製造方法 | |
JP5859054B2 (ja) | シリコンウェーハ研磨用組成物 | |
JP2016207875A (ja) | 研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11826835 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13824149 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2012535032 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120111031858 Country of ref document: DE Ref document number: 112011103185 Country of ref document: DE |
|
ENP | Entry into the national phase |
Ref document number: 20137010085 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11826835 Country of ref document: EP Kind code of ref document: A1 |