WO2012014720A1 - レーザ加工方法 - Google Patents
レーザ加工方法 Download PDFInfo
- Publication number
- WO2012014720A1 WO2012014720A1 PCT/JP2011/066351 JP2011066351W WO2012014720A1 WO 2012014720 A1 WO2012014720 A1 WO 2012014720A1 JP 2011066351 W JP2011066351 W JP 2011066351W WO 2012014720 A1 WO2012014720 A1 WO 2012014720A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- modified
- modified region
- along
- workpiece
- spots
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 84
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 15
- 230000004048 modification Effects 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 7
- 239000011800 void material Substances 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 238000002407 reforming Methods 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Chemical compound [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Definitions
- the present invention relates to a laser processing method.
- Patent Document 1 As a conventional laser processing method, for example, as described in Patent Document 1, after a laser beam is condensed on a silicon single crystal substrate (processing object) to form a material altered portion (modified region), It is known that a non-through hole or a through hole is formed in a silicon single crystal substrate by performing an etching process on the silicon single crystal substrate to remove a material altered portion.
- a direction inclined with respect to the thickness direction of the workpiece (hereinafter simply referred to as “ There is a need for a space such as a hole extending in an "inclined direction") that can be accurately formed in a workpiece.
- an object of the present invention is to provide a laser processing method capable of accurately forming a space (hole) extending in a direction inclined with respect to the thickness direction of the processing object in the processing object.
- the anisotropic etching process since the anisotropic etching process is performed, it is possible to control the progress of etching by utilizing the feature that the etching rate depends on the crystal orientation of the object to be processed. Further, in the reforming region, at least a part of the adjacent reforming spots overlap each other when viewed from one side direction, so that a plurality of reforming spots or the reforming spots are formed along the reforming region formation planned line. It is possible to suitably connect the extending cracks. Therefore, even when the selective etching of the modified region is progressed along the direction inclined with respect to the thickness direction, it can be suitably progressed without interruption. As a result, a portion corresponding to the space in the processing object can be accurately removed, and the space can be formed in the processing object with high accuracy.
- the modified region forming step specifically includes a plurality of modified spots such that adjacent modified spots partially overlap each other when viewed from one side direction. May be formed along the modified region formation scheduled line while shifting in the thickness direction.
- the laser beam may be irradiated to the workpiece while moving the condensing point of the laser beam along the other side direction orthogonal to the one side direction. is there.
- the modified region forming step specifically forms a plurality of modified spots as a group of modified spots that are arranged continuously along one lateral direction.
- a plurality of the modified spot groups are shifted in one lateral direction along the modified region formation planned line so that a part of a pair of adjacent modified spot groups overlap each other when viewed from the thickness direction.
- the laser beam may be irradiated to the workpiece while moving the condensing point of the laser beam along one lateral direction.
- a plurality of modified spots are shifted to the modified region formation planned line while shifting in the thickness direction so that a part of the adjacent modified spots overlap each other when viewed from one side direction. And forming a plurality of reforming spots as a group of reforming spots, and a plurality of reforming spots arranged in a row along one lateral direction.
- a second step of forming a plurality of modified spot groups along the modified region formation planned line while shifting in one lateral direction so that the portions overlap each other when viewed from the thickness direction.
- the modified region formation scheduled line may extend along the (111) plane of the workpiece.
- a mirror surface (mirror surface) is formed on the inner surface of the hole at an angle of 35 ° with respect to the thickness direction.
- the space may be a through hole that opens on the front surface and the back surface of the workpiece.
- a space inclined with respect to the thickness direction of the workpiece can be accurately formed in the workpiece.
- FIG. 3 is a cross-sectional view taken along the line III-III of the workpiece in FIG. 2. It is a top view of the processing target after laser processing.
- FIG. 5 is a cross-sectional view taken along the line VV of the workpiece in FIG. 4.
- FIG. 5 is a cross-sectional view taken along line VI-VI of the workpiece in FIG. 4.
- A) is a cross-sectional perspective view of the processing object for demonstrating the laser processing method concerning 1st Embodiment
- (b) is a cross-sectional perspective view of the processing object which shows the continuation of FIG.
- FIG. 8 is a cross-sectional perspective view of the object to be processed showing the continuation of FIG. (a) is sectional drawing of the processing target object which shows the continuation of FIG.7 (c), (b) is sectional drawing of the processing target object which shows the continuation of Fig.8 (a).
- A) is a cross-sectional perspective view of the processing object for demonstrating the laser processing method concerning 2nd Embodiment
- (b) is a cross-sectional perspective view of the processing object which shows the continuation of Fig.9 (a), (c).
- FIG. 10 is a cross-sectional perspective view of the processing object showing a continuation of FIG. It is sectional drawing of the process target object for demonstrating the laser processing method which concerns on 3rd Embodiment. It is sectional drawing of the processing target object which shows the continuation of FIG.
- FIG. 12 is a cross-sectional view of the workpiece to be continued from FIG. 11.
- the modified region is formed by condensing the laser beam inside the object to be processed. First, the formation of the modified region will be described below with reference to FIGS.
- a laser processing apparatus 100 includes a laser light source 101 that oscillates a laser beam L, a dichroic mirror 103 that is arranged so as to change the direction of the optical axis (optical path) of the laser beam L, and A condensing lens 105 for condensing the laser light L. Further, the laser processing apparatus 100 includes a support base 107 for supporting the workpiece 1 irradiated with the laser light L condensed by the condensing lens 105, and a stage 111 for moving the support base 107. And a laser light source control unit 102 for controlling the laser light source 101 to adjust the output of the laser light L, the pulse width, and the like, and a stage control unit 115 for controlling the movement of the stage 111.
- the laser beam L emitted from the laser light source 101 has its optical axis changed by 90 ° by the dichroic mirror 103, and is a plate-like processing object placed on the support base 107. 1 is condensed by the condensing lens 105. At the same time, the stage 111 is moved, and the workpiece 1 is moved relative to the laser beam L along the modified region formation scheduled line 5. As a result, a modified region along the modified region formation scheduled line 5 is formed on the workpiece 1.
- a modified region formation scheduled line 5 is set in the processing object 1.
- the modified region formation scheduled line 5 here is a virtual line extending linearly.
- the laser beam L is applied to the modified region formation planned line 5 in a state where the focused point P is aligned with the inside of the workpiece 1. (Ie, in the direction of arrow A in FIG. 2).
- the modified region 7 is formed inside the workpiece 1 along the modified region formation scheduled line 5, and this modified region 7 is etched (described later).
- the removal region 8 is formed by the step.
- the condensing point P is a location where the laser light L is condensed.
- the modified region formation scheduled line 5 is not limited to a straight line, but may be a curved line, a three-dimensional combination of these, or a coordinate designated.
- the modified region 7 may be formed continuously or intermittently. Further, the modified region 7 may be in the form of a line or a dot. In short, the modified region 7 only needs to be formed at least inside the workpiece 1.
- a crack may be formed starting from the modified region 7, and the crack and modified region 7 may be exposed on the outer surface (front surface, back surface, or side surface) of the workpiece 1.
- the laser beam L passes through the workpiece 1 and is particularly absorbed in the vicinity of the condensing point inside the workpiece 1, whereby a modified region 7 is formed in the workpiece 1.
- a modified region 7 is formed in the workpiece 1.
- surface absorption laser processing when a removed portion such as a hole or a groove is formed by being melted and removed from the front surface 3 (surface absorption laser processing), the processing region gradually proceeds from the front surface 3 side to the back surface side.
- the modified region 7 refers to a region in which the density, refractive index, mechanical strength, and other physical characteristics are different from the surroundings.
- the modified region 7 include a melt processing region, a crack region, a dielectric breakdown region, a refractive index change region, and the like, and there is a region where these are mixed.
- the modified region 7 includes a region where the density of the material of the workpiece 1 is changed compared to the density of the non-modified region, and a region where lattice defects are formed (collectively, a high-density transition region). Also called).
- the melt-processed region, the refractive index changing region, the region where the density of the modified region 7 is changed compared with the density of the non-modified region, and the region where lattice defects are formed are In some cases, cracks (cracks, microcracks) are included in the interface between the non-modified region 7 and the non-modified region.
- the cracks included may be formed over the entire surface of the modified region 7, or may be formed in only a part or a plurality of parts.
- Examples of the processing object 1 include those containing silicon or made of silicon.
- the modified workpiece 7 is etched along the modified region 7 (that is, the modified region 7, Etching is selectively advanced (along a crack included in the modified region 7 or a crack from the modified region 7), and a portion along the modified region 7 in the workpiece 1 is removed.
- This crack is also referred to as a crack, a microcrack, a crack or the like (hereinafter simply referred to as “crack”).
- etching process of the present embodiment for example, by using capillary phenomenon or the like, an etching agent is infiltrated into a crack included in or from the modified region 7 of the workpiece 1 and along the crack surface. Etching progress. As a result, in the workpiece 1, the etching progresses and is removed at a selective and fast etching rate (etching rate) along the crack. At the same time, utilizing the feature that the modified region 7 itself has a high etching rate, etching is selectively advanced along the modified region 7 and removed.
- Etching treatment includes, for example, a case where the workpiece 1 is immersed in an etchant (dipping method: Dipping) and a case where the etchant is applied while rotating the workpiece 1 (spin etching method: SpinEtching).
- etching agent for example, KOH (potassium hydroxide), TMAH (tetramethylammonium hydroxide aqueous solution), EDP (ethylenediamine pyrocatechol), NaOH (sodium hydroxide), CsOH (cesium hydroxide), NH 4 OH (water) Ammonium oxide), hydrazine and the like.
- KOH potassium hydroxide
- TMAH tetramethylammonium hydroxide aqueous solution
- EDP ethylenediamine pyrocatechol
- NaOH sodium hydroxide
- CsOH cesium hydroxide
- NH 4 OH water Ammonium oxide
- hydrazine hydrazine and the like.
- etching agent not only a liquid form but a gel form (jelly form, semi-solid form) can be used.
- the etching agent here is used at a temperature from room temperature to around 100 ° C., and is set to an appropriate temperature according to the required etching rate.
- an anisotropic etching process in which an etching rate in a specific direction based on the crystal orientation is fast (or slow) is performed.
- This anisotropic etching process can be applied not only to a relatively thin workpiece but also to a thick object (for example, a thickness of 800 ⁇ m to 100 ⁇ m).
- the etching can proceed along the modified region 7 even when the surface on which the modified region 7 is formed differs from the plane orientation. That is, in the anisotropic etching treatment here, in addition to the etching of the plane orientation following the crystal orientation, the etching independent of the crystal orientation is also possible.
- the laser processing method according to the first embodiment will be described in detail.
- 7 and 8 are flowcharts for explaining the present embodiment.
- the laser beam L is a pulsed laser beam.
- This embodiment is a processing method used to manufacture, for example, a photomultiplier element, an interposer, or the like.
- a plurality of modified spots S are formed inside the workpiece 1 by condensing the laser beam L on the workpiece 1, and the plurality of modified spots are formed.
- the modified region 7 is formed by the quality spot S.
- a through hole as a slanted hole including a space extending obliquely with respect to the thickness direction of the workpiece 1 is obtained.
- a hole 24 is formed in the workpiece 1.
- the through-hole 24 here has straight portions 24 a and 24 a formed at the end portion on the front surface 3 side and the end portion on the back surface 21 side of the workpiece 1, and these straight portion portions. And an inclined portion (space) 24b formed between 24a and 24a.
- the straight portion 24a extends along the thickness direction.
- the inclined portion 24b is continuous with the straight portions 24a and 24a, and extends in a direction inclined in the X direction with respect to the Z direction (hereinafter referred to as an “oblique direction”) along the (111) plane of the workpiece 1. ing.
- the angle of the inclined portion 24b with respect to the thickness direction (Z direction) is 35 °.
- the thickness direction (irradiation direction of the laser beam L) of the workpiece 1 is the Z direction, and the modified region formation scheduled portion 5 (through hole 24) with respect to the thickness direction.
- the direction orthogonal to the X and Z directions is defined as the Y direction (the other lateral direction).
- the workpiece 1 is a silicon substrate that is transparent with respect to the wavelength of the laser beam L to be irradiated (for example, 1064 nm), and has a front surface 3 and a rear surface 21 that are the (100) plane. is doing.
- a modified region formation scheduled line 5 is set at a position corresponding to the through hole 24 in a programmable manner by three-dimensional coordinate designation.
- the modified region formation scheduled line 5 is a modified region formation scheduled line 5a extending along the thickness direction on the front surface 3 side and the back surface 21 side of the processing object 1, and a processing target between them.
- a modified region forming scheduled line 5b extending incliningly along the (111) plane of the object 1.
- the workpiece 1 When processing the workpiece 1 in the present embodiment, first, the workpiece 1 is placed and held on the mounting table with the surface 3 side of the workpiece 1 facing upward. Then, a laser beam L condensing point (hereinafter simply referred to as “condensing point”) is aligned with the back surface 21 side inside the workpiece 1, and the modified region is scheduled to be formed while moving the condensing point in the Y direction.
- the laser beam L is irradiated ON / OFF from the surface 3 side so as to form the modified spot S along the line 5a (scan in the Y direction). Thereby, the laser beam L is condensed on the back surface 21 side of the workpiece 1, and the modified spot S exposed on the back surface 21 is formed.
- the modified spot S having a width in the X direction of 10 ⁇ m is formed. Further, the modified spot S is formed by including cracks generated from the modified spot S (the same applies to the modified spots S below). Further, the focus spot pitch (pitch of the modified spot S) is scanned in the Y direction at about 0.25 ⁇ m (in short, laser irradiation is performed at intervals of 0.25 ⁇ m, and the modified spot S is the number of times of laser irradiation. A plurality of modified spots S are formed so that a part of the modified spots S formed by one laser irradiation overlap each other in the Y direction.
- the focusing point is moved to the surface 3 side in the Z direction by a predetermined amount, and the Y direction scan is performed so that the modified spot S is formed along the modified region formation scheduled line 5a.
- a modified spot S is newly formed on the surface 3 side of the existing modified spot S along the portion corresponding to the straight portion 24a on the back surface 21 side of the through hole 24, and the modified spot S or the modified spot S is formed. Cracks from the quality spot S are connected to each other along the modified region forming line 5.
- the condensing point is moved to the surface 3 side in the Z direction by a predetermined amount, and after moving a predetermined amount in the X direction, the Y direction scan is performed. Specifically, based on the following formula (1), after the condensing point is moved to the predetermined amount ⁇ Z in the Z direction and the predetermined amount ⁇ X is moved in the X direction, it is revised along the modified region formation scheduled line 5b. The scanning in the Y direction is performed so that the quality spot S is formed.
- a plurality of reforming spots S are continuously formed such that a part of the adjacent reforming spots S overlap each other when viewed from the X direction.
- the plurality of modified spots S are stepped along the workpiece forming line 5b while shifting in the thickness direction so that a part of the adjacent modified spots S overlap each other when viewed from the X direction.
- the modified spots S or cracks from the modified spots S are connected to each other along the modified region forming line 5.
- the condensing point is moved to the surface 3 side in the Z direction by a predetermined amount, and the modified spot S is formed along the modified region formation planned line 5a.
- a modified spot S that is continuous with the surface 3 side of the existing modified spot S and is exposed to the surface 3 is newly provided.
- the modified spots S or cracks from the modified spots S are connected to each other along the modified region forming line 5.
- a plurality of modified spots S are formed in a portion corresponding to the through hole 24 of the workpiece 1 so as to form a modified region 7A.
- the workpiece 1 is subjected to anisotropic etching using, for example, 85 ° C. KOH as an etching agent.
- the etching agent enters the modified region 7 from the front surface 3 and the back surface 21 to infiltrate the workpiece 1 and is infiltrated from the front surface 3 side and the back surface 21 side.
- the etching along the modified region 7 is selectively advanced (progressed).
- FIG. 8B the portion along the modified region 7 of the workpiece 1 is removed, and the formation of the through hole 24 is completed.
- the selective etching progress along the modified region 7 is suitably controlled by using the feature that the etching rate depends on the crystal orientation of the workpiece 1.
- the etching rate is extremely slow compared to the other portions, and the etching stops (etch-stop). Therefore, in the modified region 7 along the (111) plane (that is, the modified region 7 corresponding to the inclined portion 24b), the etching proceeds particularly selectively and rapidly along the extending direction, The inner surface of the formed inclined portion 24b is smoothed by removing the corner portion, and a mirror surface is formed on the inner surface.
- the modified region 7 along the modified region formation scheduled line 5b at least a part of the adjacent modified spots S and S overlap each other when viewed from the X direction. It is possible to suitably connect the spot S or the crack from the modified spot S along the modified region formation scheduled line 5b. Therefore, even when the selective etching of the modified region 7 is progressed in an oblique direction, it can be suitably progressed without interruption.
- a plurality of modified spots are formed such that a part of the adjacent modified spots S overlap each other when viewed from the X direction. Since S is formed shifted in the thickness direction, for example, the modified spot S or a crack from the modified spot S is closely connected along the modified region formation scheduled line 5b, so Thus, the etchant is infiltrated and progressed without being retained, and the etching progresses reliably and at high speed without interruption in an oblique direction.
- the present embodiment it is possible to accurately remove a portion corresponding to the through hole 24 in the workpiece 1 and to accurately form the through hole 24 in the workpiece 1. Moreover, the through-hole 24 of a desired angle and length can be formed easily, and it becomes possible to improve the design freedom at the time of processing the workpiece 1.
- the modified region formation scheduled line 5b extends along the (111) plane of the workpiece, and is formed at a portion corresponding to the inclined portion 24b of the through hole 24 in the workpiece 1.
- a modified spot S is formed along the (111) plane of the workpiece. Therefore, the mirror surface which is a smooth surface with few unevenness
- the modified spot S is exposed on the front surface 3 and the back surface 21, but a crack from the modified spot S may be exposed without exposing the modified spot S.
- the aperture ratio of the formed through-hole 24 can be increased.
- the electron collection efficiency can be increased. It becomes possible.
- the crack is exposed without exposing the modified spot S, the diameter of the opening side of the through hole 24 can be prevented from expanding, and the hole diameter on the opening side of the through hole 24 can be made the same size as the internal hole diameter. it can.
- the number of modified spots S formed on the workpiece 1, that is, the number of times of laser beam L irradiation (number of shots) is not limited to that of the present embodiment, and the shape (hole diameter) of the through hole 24 is not limited. , Length, angle with respect to the Z direction, and the like).
- the laser beam L is a pulsed laser beam.
- FIG. 9 is a flowchart for explaining the present embodiment.
- the focusing point is aligned with the back surface 21 side of the workpiece 1 and the focusing point is moved while moving in the X direction.
- the laser beam L is irradiated ON / OFF from the surface 3 side (scan in the X direction) so that the modified spot S is formed on the region formation planned line 5a.
- two or more modified spots S arranged in a row along the X direction are formed as the modified spot group 10 so as to be exposed to the back surface 21 on the back surface 21 side of the workpiece 1.
- the interval between the modified spots S arranged side by side is set to 0.25 ⁇ m, and the modified spots S in the X direction partially overlap each other (hereinafter the same).
- the focal point pitch (the pitch of the modified spot S) is scanned in the X direction at about 0.25 ⁇ m (in short, laser irradiation is performed at intervals of 0.25 ⁇ m, and the number of laser irradiations is modified).
- the modified spot group 10 is formed so that a part of the modified spots S formed by one laser irradiation overlap each other in the X direction.
- the condensing point is moved to the surface 3 side in the Z direction by a predetermined amount, and the scan in the X direction is performed so that the modified spot group 10 is formed along the modified region formation scheduled line 5a.
- a modified spot group 10 is newly formed on the surface 3 side of the existing modified spot group 10 along a portion corresponding to the straight portion 24a on the back surface 21 side of the through hole 24, and the modified spot S or Cracks from the modified spot S are connected to each other along the modified region formation scheduled line 5.
- the condensing point is moved to the surface 3 side in the Z direction, and the modified spot group 10 is formed along the modified region formation scheduled line 5b. Perform direction scans. Then, the Z-direction movement and the X-direction scanning of the condensing point are repeated a plurality of times in order from the back surface 21 side to the front surface 3 side in the workpiece 1. Thereby, a plurality of modified spot groups 10 are formed in the workpiece 1 along the portion corresponding to the inclined portion 24 b of the through hole 24.
- the modified region formation planned line 5b is formed by shifting the plurality of modified spot groups 10 in the X direction so that a part of the pair of adjacent modified spot groups 10, 10 overlaps each other when viewed from the Z direction.
- the modified spots S or cracks from the modified spots S are connected to each other along the modified region forming line 5.
- the overlap in the Z-direction view of the adjacent modified spot group 10 is caused by the hole diameter of the inclined portion 24b to be formed and the inclined portion 24b (the modified region formation schedule). It is set based on the angle of the line 5b) with respect to the Z direction.
- adjacent modified spot groups 10 are formed so as to overlap in the X direction by about 8 to 10 ⁇ m.
- the condensing point is moved to the surface 3 side in the Z direction, and the modified spot S is formed along the modified region formation scheduled line 5a.
- Perform a scan As a result, the modified spot group 10 exposed on the surface 3 is newly formed on the surface side of the existing modified spot group 10 along the portion corresponding to the straight portion 24a on the surface 3 side of the through hole 24, and the modified spot group 10 is modified.
- the quality spots S or cracks from the modified spots S are connected to each other along the modified region forming line 5.
- the modified spot group 10 including the plurality of modified spots S is formed continuously at the portion corresponding to the through hole 24 of the workpiece 1, thereby forming the modified region 7 ⁇ / b> B.
- the same effect as the above-described effect of accurately removing the portion corresponding to the through hole 24 in the workpiece 1 and forming the through hole 24 in the workpiece 1 with high accuracy is achieved. .
- the plurality of modified spot groups 10 are reformed while shifting in the X direction so that a part of the pair of adjacent modified spot groups 10 overlaps each other when viewed from the Z direction. It is formed along the region formation scheduled line 5b. Therefore, for example, in the modified region 7 along the modified region formation scheduled line 5b, the modified spots S and cracks are closely connected along the modified region formed planned line 5b, and the selective etching progresses in an oblique direction.
- the etching agent is infiltrated and progressed without stopping. Therefore, the selective etching is reliably and rapidly progressed in an oblique direction where the selective etching is interrupted. As a result, the portion corresponding to the inclined portion 24b of the through hole 24 can be removed with high accuracy, and the through hole 24 can be formed with high accuracy.
- the modified region 7B is formed by performing scanning in the X direction that irradiates the laser light L while moving the condensing point of the laser light L along the X direction. Therefore, wasteful movement (number of scans) of the condensing point of the laser beam L can be suppressed and rapid processing can be performed, and the tact time can be improved.
- the modified region 7B can be formed with the same number of scans regardless of the length of the through hole 24 and the angle with respect to the thickness direction.
- each modified spot group 10 is not limited, and are appropriately set according to the shape of the through hole 24. It is possible. The same applies to the following embodiments.
- the laser beam L is a pulsed laser beam.
- 10 to 12 are flowcharts for explaining the present embodiment.
- a plurality of through holes (spaces) 241 to 244 that are inclined with respect to the Z direction are formed in the workpiece 1.
- the through holes 241 to 244 are greatly inclined in this order with respect to the Z direction, and the extending length is increased in this order.
- a plurality of modified spots S are formed so as to be shifted in the thickness direction so that a part of the adjacent modified spots S overlap each other when viewed from the X direction.
- the extended length of the modified region 72A is longer than the extended length of the modified region 73A.
- the plurality of modified spot groups 10 are formed so as to be shifted in the X direction so that a part of the pair of adjacent modified spot groups 10 and 10 overlap each other when viewed from the Z direction.
- the extension length of the modified region 73B is longer than the extended length of the modified region 72B.
- an etching agent enters the modified region 7 from the front surface 3 and the back surface 21 in the processing object 1 by performing an anisotropic etching process on the processing object 1. Infiltration is performed, and etching is selectively advanced along the modified region 7.
- the etching rate along the modified regions 72B, 73B, 74 depends on, for example, the modified spot S or how the cracks are connected, and the etching rate is along the modified regions 71, 72A, 73A. It is found that it is faster than the etching rate of all etchings.
- the etching along the modified regions 72B, 73B, 74 is more performed than the etching along the modified regions 71, 72A, 73A.
- the etching progresses so that the longer the extension length of the through holes 241 to 244, the faster the etching rate.
- the time required for completion of etching penetration of the through holes 241 to 244 is adjusted, and the formation of the through holes 241 to 244 is completed almost simultaneously so that the hole diameters are aligned with each other.
- the portion corresponding to the through holes 241 to 244 in the workpiece 1 is accurately removed, and the same effect as the above-described effect of forming the through holes 241 to 244 in the workpiece 1 with high accuracy. Is played.
- the time required for completion of etching is usually different from each other, and it is difficult to equalize the hole diameters.
- laser processing that combines the scan in the X direction and the scan in the Y direction is performed, and the modified regions 72B, 73B, 74 and slow modified regions 71, 72A, 73A are appropriately formed.
- the time required to complete the etching in the through holes 241 to 244 can be adjusted, and the hole diameter can be controlled as desired.
- the longer one of the through holes 241 to 244 the more the modified region 7 with a fast etching rate is increased in the corresponding portion (the modified region 7 with a slow etching rate is small).
- the time required for the completion of the formation and etching is made equal.
- the hole diameters of the through holes 241 to 244 can be made equal to each other.
- the laser light incident surface when forming the modified region 7 is not limited to the front surface 3 of the workpiece 1 but may be the back surface 21 of the workpiece 1.
- the through-hole 24 was formed in the workpiece 1, instead of this, you may form the non-through-hole opened only in the surface 3 or the back surface 21, and a channel and a slit are formed. It may be formed. In short, a space extending in a direction inclined with respect to the Z direction may be formed.
- the through-hole 24 of various cross-sectional shapes such as a cross-sectional circular shape, a cross-sectional elliptical shape, or a cross-sectional polygonal shape, can be formed.
- inclination part 24b of a through-hole is inclined at 35 degrees (azimuth angle of (111) plane) with respect to Z direction
- an inclination angle is not limited and it is with respect to Z direction. You may incline at 10 degrees or 45 degrees.
- a multi-step (step structure) can be formed on the inner surface of the inclined portion 24b.
- the etching rate of a specific crystal orientation can be changed by adding an additive to the etching agent, according to the crystal orientation of the workpiece 1 in order to perform an anisotropic etching process at a desired etching rate.
- Additives may be added to the etchant.
- a space inclined with respect to the thickness direction of the workpiece can be accurately formed in the workpiece.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Ceramic Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
次に、第1実施形態に係るレーザ加工方法ついて詳細に説明する。図7,8は、本実施形態を説明するためのフロー図である。なお、本実施形態では、レーザ光Lはパルスレーザ光としている。
ΔZ=ΔX/tanθ …(1)
Ns=T/ΔZ …(2)
但し、ΔX=所定値(例えば3μm)
θ =改質領域形成予定ライン5のZ方向に対する角度
T =傾斜部24bのZ方向厚さ
次に、第2実施形態について説明する。なお、本実施形態の説明においては、上記第1実施形態と異なる点について主に説明する。また、上記第1実施形態と同様に、レーザ光Lはパルスレーザ光としている。
次に、第3実施形態について説明する。なお、本実施形態の説明においては、上記第1実施形態と異なる点について主に説明する。また、上記第1実施形態と同様に、レーザ光Lはパルスレーザ光としている。
Claims (8)
- シリコンで形成された板状の加工対象物にレーザ光を集光することにより、前記加工対象物の厚さ方向に対して一の側方側に傾斜する改質領域形成予定ラインに沿って、前記加工対象物の内部に改質スポットを複数形成し、これら複数の前記改質スポットによって改質領域を形成する改質領域形成工程と、
前記改質領域形成工程の後、前記加工対象物に異方性エッチング処理を施すことにより、前記改質領域に沿ってエッチングを選択的に進展させ、前記厚さ方向に対し傾斜して延びる空間を前記加工対象物に形成するエッチング処理工程と、を備え、
前記改質領域形成工程では、隣接する前記改質スポットの少なくとも一部が前記一の側方方向から見て互いに重なるように、複数の前記改質スポットを形成するレーザ加工方法。 - 前記改質領域形成工程は、
隣接する前記改質スポットの一部が前記一の側方方向から見て互いに重なるように、複数の前記改質スポットを前記厚さ方向にずらしながら前記改質領域形成予定ラインに沿って形成する工程を含む請求項1記載のレーザ加工方法。 - 前記改質領域形成工程では、前記加工対象物に対し、前記一の側方方向と直交する他の側方方向に沿って前記レーザ光の集光点を移動させつつ該レーザ光を照射する請求項2記載のレーザ加工方法。
- 前記改質領域形成工程は、
前記一の側方方向に沿って連続するように並ぶ2以上の前記改質スポットを改質スポット群として複数形成すると共に、隣接する一対の前記改質スポット群の一部が前記厚さ方向から見て互いに重なるように、複数の前記改質スポット群を前記一の側方方向にずらしながら前記改質領域形成予定ラインに沿って形成する工程を含む請求項1記載のレーザ加工方法。 - 前記改質領域形成工程では、前記加工対象物に対し、前記一の側方方向に沿って前記レーザ光の集光点を移動させつつ該レーザ光を照射する請求項4記載のレーザ加工方法。
- 前記改質領域形成工程は、
隣接する前記改質スポットの一部が前記一の側方方向から見て互いに重なるように、複数の前記改質スポットを前記厚さ方向にずらしながら前記改質領域形成予定ラインに沿って形成する第1の工程と、
前記一の側方方向に沿って連続するように並ぶ2以上の前記改質スポットを改質スポット群として複数形成すると共に、隣接する一対の前記改質スポット群の一部が前記厚さ方向から見て互いに重なるように、複数の前記改質スポット群を前記一の側方方向にずらしながら前記改質領域形成予定ラインに沿って形成する第2の工程と、を含む請求項1記載のレーザ加工方法。 - 前記改質領域形成予定ラインは、前記加工対象物の(111)面に沿って延びる請求項1~6の何れか一項記載のレーザ加工方法。
- 前記空間は、前記加工対象物の表面及び裏面に開口する貫通孔である請求項1~7の何れか一項記載のレーザ加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020127030330A KR102000031B1 (ko) | 2010-07-26 | 2011-07-19 | 레이저 가공 방법 |
EP11812312.4A EP2599580A4 (en) | 2010-07-26 | 2011-07-19 | LASER PROCESSING PROCESS |
US13/388,597 US8961806B2 (en) | 2010-07-26 | 2011-07-19 | Laser processing method |
CN201180036018.1A CN103025471B (zh) | 2010-07-26 | 2011-07-19 | 激光加工方法 |
JP2012526434A JP5389264B2 (ja) | 2010-07-26 | 2011-07-19 | レーザ加工方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-167427 | 2010-07-26 | ||
JP2010167427 | 2010-07-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012014720A1 true WO2012014720A1 (ja) | 2012-02-02 |
Family
ID=45529936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/066351 WO2012014720A1 (ja) | 2010-07-26 | 2011-07-19 | レーザ加工方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8961806B2 (ja) |
EP (1) | EP2599580A4 (ja) |
JP (1) | JP5389264B2 (ja) |
KR (1) | KR102000031B1 (ja) |
CN (1) | CN103025471B (ja) |
TW (1) | TWI568525B (ja) |
WO (1) | WO2012014720A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8655104B2 (en) | 2009-06-18 | 2014-02-18 | Schlumberger Technology Corporation | Cyclic noise removal in borehole imaging |
US8682102B2 (en) | 2009-06-18 | 2014-03-25 | Schlumberger Technology Corporation | Cyclic noise removal in borehole imaging |
KR20170044143A (ko) * | 2014-09-16 | 2017-04-24 | 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 | 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법 |
JP2020075418A (ja) * | 2018-11-08 | 2020-05-21 | キヤノン株式会社 | 基板と基板積層体と液体吐出ヘッドの製造方法 |
WO2022014105A1 (ja) * | 2020-07-15 | 2022-01-20 | 浜松ホトニクス株式会社 | レーザ加工装置、及び、レーザ加工方法 |
WO2022014107A1 (ja) * | 2020-07-15 | 2022-01-20 | 浜松ホトニクス株式会社 | レーザ加工装置、及び、レーザ加工方法 |
WO2022014104A1 (ja) * | 2020-07-15 | 2022-01-20 | 浜松ホトニクス株式会社 | レーザ加工装置、レーザ加工方法、及び、半導体部材の製造方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5693074B2 (ja) * | 2010-07-26 | 2015-04-01 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP2013046924A (ja) * | 2011-07-27 | 2013-03-07 | Toshiba Mach Co Ltd | レーザダイシング方法 |
JP6608713B2 (ja) * | 2016-01-19 | 2019-11-20 | 株式会社ディスコ | ウエーハの加工方法 |
US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
US10134657B2 (en) | 2016-06-29 | 2018-11-20 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
KR20190116378A (ko) * | 2017-03-06 | 2019-10-14 | 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 | 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법 |
JP7063543B2 (ja) * | 2017-04-17 | 2022-05-09 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
US11152294B2 (en) | 2018-04-09 | 2021-10-19 | Corning Incorporated | Hermetic metallized via with improved reliability |
CN108637501B (zh) * | 2018-04-13 | 2020-04-24 | 杭州电子科技大学 | 基于激光超声技术的硅基内部微结构成型的控制方法 |
WO2020130054A1 (ja) * | 2018-12-21 | 2020-06-25 | 国立大学法人東海国立大学機構 | レーザ加工方法、半導体部材製造方法及びレーザ加工装置 |
JP7492969B2 (ja) | 2019-02-21 | 2024-05-30 | コーニング インコーポレイテッド | 銅金属化貫通孔を有するガラスまたはガラスセラミック物品およびその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000246475A (ja) * | 1999-02-25 | 2000-09-12 | Seiko Epson Corp | レーザ光による加工方法 |
JP2005074663A (ja) | 2003-08-28 | 2005-03-24 | Seiko Epson Corp | 単結晶基板の加工方法 |
JP2006167804A (ja) * | 2004-11-19 | 2006-06-29 | Canon Inc | レーザ割断方法およびレーザ割断装置 |
JP2010142837A (ja) * | 2008-12-18 | 2010-07-01 | Seiko Epson Corp | レーザ加工方法 |
JP2010155259A (ja) * | 2008-12-26 | 2010-07-15 | Seiko Epson Corp | 溝形成方法 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1271423A (en) * | 1968-06-27 | 1972-04-19 | Gen Electric | Improvements relating to the manufacture of sheets having holes therein by an etching process |
BE755122A (fr) * | 1969-06-20 | 1971-02-01 | Albright & Wilson | Procede de depot electrolytique de cuivre |
US3770532A (en) * | 1971-02-16 | 1973-11-06 | Gen Electric | Porous bodies and method of making |
US3713921A (en) * | 1971-04-01 | 1973-01-30 | Gen Electric | Geometry control of etched nuclear particle tracks |
JPH04150212A (ja) | 1990-10-09 | 1992-05-22 | Seiko Epson Corp | 水晶基板のエッチング加工方法 |
JPH0740482A (ja) | 1993-07-27 | 1995-02-10 | Jsp Corp | 発泡ポリプロピレン系樹脂積層体及び該積層体の製造方法 |
JP2873937B2 (ja) | 1996-05-24 | 1999-03-24 | 工業技術院長 | ガラスの光微細加工方法 |
JP3473668B2 (ja) | 1997-01-23 | 2003-12-08 | セイコーエプソン株式会社 | インクジェット式記録ヘッド |
US6033583A (en) * | 1997-05-05 | 2000-03-07 | The Regents Of The University Of California | Vapor etching of nuclear tracks in dielectric materials |
JP4497147B2 (ja) | 1998-12-16 | 2010-07-07 | セイコーエプソン株式会社 | 半導体チップの製造方法、半導体装置の製造方法、回路基板の製造方法及び電子機器の製造方法 |
TW523838B (en) * | 1998-12-16 | 2003-03-11 | Seiko Epson Corp | Semiconductor device, electrical circuit board, electronic machine and their manufacturing method, and semiconductor chip manufacturing method |
AU2692100A (en) * | 1999-02-25 | 2000-09-14 | Seiko Epson Corporation | Method for machining work by laser beam |
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
JP4880820B2 (ja) | 2001-01-19 | 2012-02-22 | 株式会社レーザーシステム | レーザ支援加工方法 |
US6754429B2 (en) * | 2001-07-06 | 2004-06-22 | Corning Incorporated | Method of making optical fiber devices and devices thereof |
CN101335235B (zh) | 2002-03-12 | 2010-10-13 | 浜松光子学株式会社 | 基板的分割方法 |
CA2428187C (en) | 2002-05-08 | 2012-10-02 | National Research Council Of Canada | Method of fabricating sub-micron structures in transparent dielectric materials |
JP4329374B2 (ja) | 2002-07-29 | 2009-09-09 | パナソニック電工株式会社 | 発光素子およびその製造方法 |
JP4158481B2 (ja) | 2002-10-21 | 2008-10-01 | セイコーエプソン株式会社 | レーザー加工方法およびその装置、並びにその装置を用いた穴あけ加工方法 |
JP2004160618A (ja) | 2002-11-15 | 2004-06-10 | Seiko Epson Corp | マイクロマシン及びマイクロマシンの製造方法 |
JP2004223586A (ja) | 2003-01-24 | 2004-08-12 | Institute Of Physical & Chemical Research | 透明材料内部の処理方法 |
JP2004304130A (ja) | 2003-04-01 | 2004-10-28 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2004351494A (ja) | 2003-05-30 | 2004-12-16 | Seiko Epson Corp | レーザーに対して透明な材料の穴あけ加工方法 |
JP2004359475A (ja) | 2003-06-02 | 2004-12-24 | Seiko Epson Corp | 光学素子の製造方法及び光学装置 |
JP4385656B2 (ja) | 2003-06-11 | 2009-12-16 | セイコーエプソン株式会社 | 液体噴射ヘッド、及び、その製造方法 |
JP2005121915A (ja) | 2003-10-16 | 2005-05-12 | Seiko Epson Corp | マイクロレンズ用凹部付き基板の製造方法、マイクロレンズ用凹部付き基板、マイクロレンズ基板、液晶パネル用対向基板、液晶パネルおよび投射型表示装置 |
JP2005121916A (ja) | 2003-10-16 | 2005-05-12 | Seiko Epson Corp | レンチキュラレンズ用凹部付き基板の製造方法、レンチキュラレンズ用凹部付き基板、レンチキュラレンズ基板、透過型スクリーンおよびリア型プロジェクタ |
JP2005144586A (ja) | 2003-11-13 | 2005-06-09 | Seiko Epson Corp | 構造体の製造方法、液滴吐出ヘッド、液滴吐出装置 |
JP2005144622A (ja) | 2003-11-18 | 2005-06-09 | Seiko Epson Corp | 構造体の製造方法、液滴吐出ヘッド、液滴吐出装置 |
JP2005152693A (ja) | 2003-11-20 | 2005-06-16 | Seiko Epson Corp | 構造体の製造方法、液滴吐出ヘッド、液滴吐出装置 |
JP2005169993A (ja) | 2003-12-15 | 2005-06-30 | Canon Inc | インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法 |
JP2005208175A (ja) | 2004-01-20 | 2005-08-04 | Seiko Epson Corp | 光部品及びその製造方法、光モジュール、光通信装置、電子機器 |
JP2005206401A (ja) | 2004-01-21 | 2005-08-04 | Seiko Epson Corp | 構造体の製造方法、液滴吐出ヘッド及び液滴吐出装置 |
JP2005306702A (ja) | 2004-04-26 | 2005-11-04 | Namiki Precision Jewel Co Ltd | テーパー形状を有する微***の形成方法 |
JP2005351774A (ja) | 2004-06-10 | 2005-12-22 | Seiko Epson Corp | マイクロアレイ作製用ヘッドの製造方法、マイクロアレイ作製用ヘッドおよびマイクロアレイ作製用装置 |
JP4630971B2 (ja) | 2004-12-21 | 2011-02-09 | 並木精密宝石株式会社 | パルスレーザによる微小構造の形成方法 |
JP2006290630A (ja) | 2005-02-23 | 2006-10-26 | Nippon Sheet Glass Co Ltd | レーザを用いたガラスの加工方法 |
JP2007021557A (ja) * | 2005-07-20 | 2007-02-01 | Seiko Epson Corp | レーザ照射装置、レーザスクライブ方法 |
JP2007036758A (ja) | 2005-07-27 | 2007-02-08 | Seiko Epson Corp | Atカット水晶振動片、その製造方法、及び水晶デバイス |
JP2007101833A (ja) | 2005-10-04 | 2007-04-19 | Seiko Epson Corp | マイクロレンズの製造方法、マイクロレンズ、空間光変調装置、スクリーン及びプロジェクタ |
CN100536108C (zh) * | 2005-11-16 | 2009-09-02 | 株式会社电装 | 半导体器件和半导体基板切分方法 |
JP4752488B2 (ja) * | 2005-12-20 | 2011-08-17 | セイコーエプソン株式会社 | レーザ内部スクライブ方法 |
KR101506355B1 (ko) | 2007-05-25 | 2015-03-26 | 하마마츠 포토닉스 가부시키가이샤 | 절단용 가공방법 |
US8197705B2 (en) * | 2007-09-06 | 2012-06-12 | Canon Kabushiki Kaisha | Method of processing silicon substrate and method of manufacturing liquid discharge head |
WO2011004556A1 (ja) * | 2009-07-06 | 2011-01-13 | 株式会社フジクラ | 貫通配線基板及びその製造方法 |
CN102577637A (zh) * | 2009-10-23 | 2012-07-11 | 株式会社藤仓 | 器件安装结构以及器件安装方法 |
EP2599583B1 (en) * | 2010-07-26 | 2020-04-01 | Hamamatsu Photonics K.K. | Substrate processing method |
KR101940332B1 (ko) * | 2010-07-26 | 2019-01-18 | 하마마츠 포토닉스 가부시키가이샤 | 기판 가공 방법 |
EP2584571A1 (en) * | 2010-08-05 | 2013-04-24 | Fujikura, Ltd. | Electronic circuit chip and method of manufacturing electronic circuit chip |
-
2011
- 2011-07-19 CN CN201180036018.1A patent/CN103025471B/zh not_active Expired - Fee Related
- 2011-07-19 JP JP2012526434A patent/JP5389264B2/ja not_active Expired - Fee Related
- 2011-07-19 US US13/388,597 patent/US8961806B2/en not_active Expired - Fee Related
- 2011-07-19 EP EP11812312.4A patent/EP2599580A4/en not_active Withdrawn
- 2011-07-19 KR KR1020127030330A patent/KR102000031B1/ko active IP Right Grant
- 2011-07-19 WO PCT/JP2011/066351 patent/WO2012014720A1/ja active Application Filing
- 2011-07-26 TW TW100126363A patent/TWI568525B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000246475A (ja) * | 1999-02-25 | 2000-09-12 | Seiko Epson Corp | レーザ光による加工方法 |
JP2005074663A (ja) | 2003-08-28 | 2005-03-24 | Seiko Epson Corp | 単結晶基板の加工方法 |
JP2006167804A (ja) * | 2004-11-19 | 2006-06-29 | Canon Inc | レーザ割断方法およびレーザ割断装置 |
JP2010142837A (ja) * | 2008-12-18 | 2010-07-01 | Seiko Epson Corp | レーザ加工方法 |
JP2010155259A (ja) * | 2008-12-26 | 2010-07-15 | Seiko Epson Corp | 溝形成方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8655104B2 (en) | 2009-06-18 | 2014-02-18 | Schlumberger Technology Corporation | Cyclic noise removal in borehole imaging |
US8682102B2 (en) | 2009-06-18 | 2014-03-25 | Schlumberger Technology Corporation | Cyclic noise removal in borehole imaging |
US9171356B2 (en) | 2009-06-18 | 2015-10-27 | Schlumberger Technology Corporation | Cyclic noise removal in borehole imaging |
KR20170044143A (ko) * | 2014-09-16 | 2017-04-24 | 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 | 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법 |
JP2017534458A (ja) * | 2014-09-16 | 2017-11-24 | エル・ピー・ケー・エフ・レーザー・ウント・エレクトロニクス・アクチエンゲゼルシヤフト | 板状の加工物に少なくとも一つの窪み又は穴を配設する方法 |
US11610784B2 (en) | 2014-09-16 | 2023-03-21 | Lpkf Laser & Electronics Se | Method for introducing at least one cutout or aperture into a sheetlike workpiece |
JP2020075418A (ja) * | 2018-11-08 | 2020-05-21 | キヤノン株式会社 | 基板と基板積層体と液体吐出ヘッドの製造方法 |
JP7150569B2 (ja) | 2018-11-08 | 2022-10-11 | キヤノン株式会社 | 基板と基板積層体と液体吐出ヘッドの製造方法 |
WO2022014105A1 (ja) * | 2020-07-15 | 2022-01-20 | 浜松ホトニクス株式会社 | レーザ加工装置、及び、レーザ加工方法 |
WO2022014107A1 (ja) * | 2020-07-15 | 2022-01-20 | 浜松ホトニクス株式会社 | レーザ加工装置、及び、レーザ加工方法 |
WO2022014104A1 (ja) * | 2020-07-15 | 2022-01-20 | 浜松ホトニクス株式会社 | レーザ加工装置、レーザ加工方法、及び、半導体部材の製造方法 |
WO2022014106A1 (ja) * | 2020-07-15 | 2022-01-20 | 浜松ホトニクス株式会社 | レーザ加工装置、及び、レーザ加工方法 |
Also Published As
Publication number | Publication date |
---|---|
US8961806B2 (en) | 2015-02-24 |
EP2599580A4 (en) | 2016-12-28 |
KR20130092991A (ko) | 2013-08-21 |
TWI568525B (zh) | 2017-02-01 |
US20120125893A1 (en) | 2012-05-24 |
JPWO2012014720A1 (ja) | 2013-09-12 |
TW201219140A (en) | 2012-05-16 |
EP2599580A1 (en) | 2013-06-05 |
JP5389264B2 (ja) | 2014-01-15 |
CN103025471B (zh) | 2015-05-13 |
KR102000031B1 (ko) | 2019-07-15 |
CN103025471A (zh) | 2013-04-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5389264B2 (ja) | レーザ加工方法 | |
JP5389265B2 (ja) | 基板加工方法 | |
JP5389266B2 (ja) | 基板加工方法 | |
KR101940334B1 (ko) | 레이저 가공 방법 | |
JP5574866B2 (ja) | レーザ加工方法 | |
JP5653110B2 (ja) | チップの製造方法 | |
WO2012164649A1 (ja) | レーザ加工方法 | |
JP5509332B2 (ja) | インターポーザの製造方法 | |
JP2011206838A (ja) | レーザ加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180036018.1 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13388597 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11812312 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012526434 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20127030330 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011812312 Country of ref document: EP |