WO2012008439A1 - 基板処理方法及び基板処理システム - Google Patents
基板処理方法及び基板処理システム Download PDFInfo
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- WO2012008439A1 WO2012008439A1 PCT/JP2011/065868 JP2011065868W WO2012008439A1 WO 2012008439 A1 WO2012008439 A1 WO 2012008439A1 JP 2011065868 W JP2011065868 W JP 2011065868W WO 2012008439 A1 WO2012008439 A1 WO 2012008439A1
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- load lock
- lock chamber
- substrate
- processed
- purge gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
Definitions
- the present invention relates to a substrate processing method and a substrate processing system for processing a substrate to be processed under reduced pressure, and more particularly, to a substrate processing method and a substrate processing system for waiting for a substrate to be processed in a load lock chamber under reduced pressure.
- the substrate processing system includes a load lock chamber in which a cassette is stored, a processing chamber for processing a substrate to be processed, a transfer chamber connected to the load lock chamber and the processing chamber, and an exhaust gas in the load lock chamber.
- a load lock chamber decompressing means for decompressing the load lock chamber a purge gas supplying means for supplying a purge gas into the load lock chamber, a transport chamber decompressing means for exhausting a gas in the transport chamber to decompress the transport chamber, and a processing And a processing chamber decompression means for exhausting the gas in the chamber and decompressing the processing chamber.
- the cassette stores a plurality of flat substrates to be processed, and the plurality of substrates to be processed are stored in a stacked manner at predetermined intervals in the vertical direction.
- the purge gas supply means is configured such that a supply position for supplying purge gas into the load lock chamber is set at an upper position of the cassette, and the load lock chamber decompression means has an exhaust position for exhausting gas from the load lock chamber.
- the cassette is placed between the supply position and the exhaust position.
- the processing chamber is depressurized by the processing chamber depressurizing means, and the transfer chamber is depressurized by the transfer chamber depressurizing means, so that the processing chamber and the transfer chamber are brought into substantially the same depressurized state. Is done.
- a cassette storing a plurality of substrates to be processed is stored in the load lock chamber under atmospheric pressure, and the load lock chamber is depressurized by the load lock chamber decompression means.
- the cassette placed between the supply position and the exhaust position is exposed to a purge gas flow from the supply position toward the exhaust position.
- the substrate to be processed in the cassette is taken out by the transfer mechanism and introduced into the processing chamber. Then, a predetermined process is performed on the substrate to be processed in the processing chamber, and the processed substrate after processing is taken out by the transport mechanism and stored again in the cassette in the load lock chamber.
- the load lock chamber is brought to atmospheric pressure, the processed cassette and the unprocessed cassette are exchanged, and the processing is performed in the same manner thereafter.
- a purge gas is supplied to the load lock chamber, and the cassette is exposed to the purge gas flow, thereby preventing the organic matter from entering the cassette by the purge gas flow and removing the organic matter from the purge gas. At the same time, it is discharged to the outside of the room, and these actions prevent organic substances from adhering to the substrate to be processed.
- the purge gas is always supplied to the load lock chamber and the gas is exhausted from the load lock chamber while the substrate to be processed is stored in the load lock chamber and in the standby state. Therefore, there is room for further improvement from the viewpoint of reducing manufacturing costs such as reducing the amount of purge gas used and reducing power consumption.
- the mean free path of organic matter can be shortened by supplying a large amount of purge gas into the load lock chamber and maintaining the pressure in the load lock chamber high.
- the amount of purge gas used is increased, there is a problem in that the manufacturing cost increases.
- the present invention has been made in view of the above circumstances, and in preventing organic contamination of the substrate to be processed, it is possible to reduce the manufacturing cost, and to further prevent organic contamination of the substrate to be processed in the load lock chamber. It is an object of the present invention to provide a substrate processing method and a substrate processing system that can be completely prevented.
- the present invention for solving the above problems is as follows.
- the substrate to be processed in the load lock chamber is taken out by the transport mechanism in the transport chamber in the decompressed state connected to the load lock chamber, and transported to the processing chamber in the decompressed state connected to the transport chamber.
- the present invention is A load lock chamber in which a substrate to be processed is stored; A processing chamber for processing the substrate to be processed; A transfer chamber connected to the load lock chamber and the processing chamber; A transfer mechanism provided in the transfer chamber, taking out the substrate to be processed in the load lock chamber and introducing it into the process chamber; and taking out the substrate to be processed in the process chamber and storing it in the load lock chamber; A load-lock chamber decompression means for exhausting the gas in the load-lock chamber to decompress the load-lock chamber; Purge gas supply means for supplying purge gas into the load lock chamber; Pressure detecting means for detecting the pressure in the load lock chamber; Control means for controlling the operation of the load lock chamber pressure reducing means and purge gas supply means; A transport chamber decompression means for exhausting the gas in the transport chamber to decompress the transport chamber; A processing chamber decompression means for exhausting the gas in the processing chamber to decompress the processing chamber; In the purge gas supply means, a supply position for supplying the purge gas into the load lock chamber
- an exhaust position for exhausting gas from the load lock chamber is set at a position below the substrate to be processed,
- the control means includes While the substrate to be processed is stored in the load lock chamber, While the purge gas is supplied into the load lock chamber by the purge gas supply means, the load lock chamber pressure reducing means exhausts the load lock chamber to depressurize the load lock chamber, and the load detection chamber detects the load lock.
- the purge gas supply means stops the supply of the purge gas, and at the same time or later, the load lock chamber pressure reducing means exhausts the exhaust from the load lock chamber.
- the processing chamber is depressurized by the processing chamber depressurizing means, and the conveying chamber is depressurized by the conveying chamber depressurizing means, so that the processing chamber and the conveying chamber are brought into substantially the same depressurized state.
- the substrate to be processed is stored in the load lock chamber under atmospheric pressure.
- the substrate to be processed is placed between the supply position and the exhaust position.
- the following processing is performed under the control of the control means while the substrate to be processed is in a standby state in the load lock chamber.
- the gas in the load lock chamber is exhausted from the exhaust position set at the lower position by the load lock chamber decompression means, while the gas is loaded by the purge gas supply means from the supply position set at the upper position of the substrate to be processed.
- Purge gas is supplied into the lock chamber, and the load lock chamber is decompressed while the purge gas is supplied.
- the purge gas can be exemplified by N 2 gas, but is not limited thereto.
- organic substances may exist in the load lock chamber under reduced pressure, but the organic substances adhere to the substrate to be processed by exposing the substrate to be processed to the purge gas flow as in the conventional case. Is prevented.
- the exhaust from the load lock chamber by the load lock chamber decompression means is resumed.
- the supply of the purge gas into the load lock chamber by the purge gas supply means is resumed.
- the first reference pressure is preferably set in the range of 10 Pa to 30 Pa, and the second reference pressure is in the range of 15 Pa to 300 Pa. It is preferable to set within.
- the substrate to be processed that is in the standby state in the load lock chamber is appropriately taken out of the load lock chamber by the transfer mechanism and introduced into the processing chamber, and predetermined processing is performed in the processing chamber. After that, it is returned to the load lock chamber again by the transport mechanism.
- the purge gas supply and the exhaust in the load lock chamber are stopped within a range that can effectively prevent organic contamination of the substrate to be processed, thus reducing the purge gas consumption and power consumption. As a result, the manufacturing cost can be reduced.
- the purge gas supply means includes a supply pipe having one end connected to the supply position of the load lock chamber, a purge opening / closing valve interposed in the supply pipe, and the other end of the supply pipe
- the load lock chamber pressure reducing means is connected to the exhaust pipe, one end of which is connected to the exhaust position of the load lock chamber, and the exhaust gas interposed in the exhaust pipe.
- the purge gas is supplied to the exhaust pipe and circulated toward the downstream side, so that the organic matter flows backward from the exhaust pump.
- the organic matter can be prevented from entering the load lock chamber. It can prevent more effectively.
- the supply amount (flow rate) of the purge gas supplied to the exhaust pipe during the stop may be much smaller than the supply amount supplied to the load lock chamber. In this sense, the amount of purge gas used can be reduced compared to the conventional case. it can.
- a plurality of the substrates to be processed are stored in a cassette at a predetermined interval in the vertical direction, and the stored cassette is placed between the supply position and the exhaust position in the load lock chamber. You may make it do.
- the cassette includes a cover body that is disposed above the uppermost substrate to be processed among the stored substrates to be processed and covers at least the entire upper surface of the uppermost substrate to be processed. Is preferred.
- the uppermost substrate to be processed is more easily contaminated by organic matter than the substrate to be processed therebelow.
- contact with the organic substance is prevented by the cover body, and the organic substance can be prevented from adhering.
- the said cover body in this invention may be the same shape as a to-be-processed substrate, In this case, it can be accommodated in a cassette similarly to a to-be-processed substrate, The said cover body is the highest-order to-be-processed. It is stored in the cassette so as to be positioned above the substrate.
- the cover body may constitute a top plate of the cassette.
- the cover body is configured to cover at least the entire upper surface of the uppermost substrate to be stored.
- the purge gas supply and the exhaust in the load lock chamber are stopped within a range in which organic contamination of the substrate to be processed can be effectively prevented. Electricity can be saved, and as a result, the manufacturing cost can be reduced.
- the contamination by organic substance can be prevented and it accommodated in the cassette.
- the substrate processing system 1 of this example includes a transfer chamber 40 having a square planar shape, a transfer mechanism 45 disposed in the transfer chamber 40, and the transfer chamber 40.
- a transfer chamber decompression mechanism 41 for reducing pressure a load lock chamber 10 connected to one of four outer peripheral surfaces of the transfer chamber 40 via a gate valve 11, and a gate on each of the other three outer peripheral surfaces.
- Processing chambers 50, 60, 70 connected through valves 51, 61, 71, a load lock chamber decompression mechanism 25 for decompressing the inside of the load lock chamber 10, and a purge gas for supplying purge gas into the load lock chamber 10
- the supply mechanism 30, the load lock chamber controller 15 for controlling the operation of the load lock chamber pressure reducing mechanism 25, the purge gas supply mechanism 30, and the like, and the processing chamber pressure reducing mechanism 5 for reducing the pressure in the processing chambers 50, 60, 70, respectively. , Consisting of 62, 72 Metropolitan.
- the transfer chamber 40, the transfer mechanism 45, the transfer chamber decompression mechanism 41, the gate valves 11, 51, 61, 71, the process chambers 50, 60, 70, the process chamber decompression mechanisms 52, 62, 72, and the like are not shown.
- the operation is controlled by the control unit.
- a mounting table 20 for mounting the cassette 80 is provided in the load lock chamber 10.
- the mounting table 20 is supported by an upper end portion of an elevating rod 22 that passes through the bottom surface of the load lock chamber 10 and is arranged in a vertical direction, and is moved by an elevating drive unit 21 connected to the lower end portion of the elevating rod 22. Moves up and down in the vertical direction.
- the penetrating portion that is penetrated by the lift rod 22 of the load lock chamber 10 is appropriately sealed by a sealing member, and the lift rod 22 in the load lock chamber 10 has an upper end at the bottom surface of the mounting table 20 described above.
- the lower end is covered with a cylindrical bellows 23 fixed to the bottom surface of the load lock chamber 10.
- An exhaust hole 12 is formed in the bottom surface of the load lock chamber 10, the load lock chamber pressure reducing mechanism 25 is connected to the exhaust hole 12, and an air supply hole 13 is formed in the wall surface of the load lock chamber 10.
- the purge gas supply mechanism 30 is connected to the air supply hole 13.
- the air supply hole 13 is located above the cassette 80 on the mounting table 20, and the cassette 80 is located in the middle connecting the air supply hole 13 and the exhaust hole 12.
- the cassette 80 has a structure in which a plurality of holding grooves 81 for holding the substrate to be processed K are provided in the vertical direction at predetermined intervals.
- the substrate to be processed K is inserted into each holding groove 81, and the cover body 90 having the same shape as the substrate to be processed K is inserted into the uppermost holding groove 81.
- the substrate to be processed K and the cover body 90 are taken in and out from the opening side 82 of the cassette 80.
- the load lock chamber decompression mechanism 25 includes an exhaust pump 26, an exhaust pipe 27 having one end connected to the exhaust pump 26, and the other end connected to the exhaust hole 12, and an exhaust disposed in an intermediate portion of the exhaust pipe 27.
- the exhaust pump 26 exhausts the gas in the load lock chamber 10 through the exhaust hole 12 and the exhaust pipe 27, and the pressure is reduced.
- the purge gas supply mechanism 30 includes a purge gas supply unit 31, a supply pipe 32, a diffuser 33, a vent opening / closing valve 34, a purge opening / closing valve 35, and a flow rate adjusting unit 36, as shown in the figure.
- One end of the supply pipe 32 is connected to the purge gas supply part 31, and the other end is connected to the air supply hole 13 of the load lock chamber 10, and the intermediate part branches into two branch pipes 32a and 32b. ing.
- the vent opening / closing valve 34 is provided in one branch pipe 32a, and the purge opening / closing valve 35 and the flow rate adjusting unit 36 are provided in the other branch pipe 32b.
- the diffuser 33 is a cup-like member fixed to the inner wall surface so as to close the air supply hole 13 opened on the inner wall surface of the load lock chamber 10, and a large number of through holes are formed in the plane. Has been.
- the purge gas is supplied from the purge gas supply unit 31 to the supply pipe 32, and the purge gas flows into the load lock chamber 10 through the supply hole 13 and the through hole of the diffuser 33.
- vent opening / closing valve 34 is opened and the purge opening / closing valve 35 is closed, a large amount of purge gas is supplied into the load lock chamber 10 through the vent opening / closing valve 34, and the inside of the load lock chamber 10 is large. Pressure. Note that the vent opening / closing valve 34 is closed after the inside of the load lock chamber 10 reaches atmospheric pressure.
- the purge gas having a flow rate adjusted by the flow rate adjusting unit 36 is supplied into the load lock chamber 10 through the purge opening / closing valve 35.
- the transfer chamber decompression mechanism 41 includes an exhaust pump 42, an exhaust pipe 43 having one end connected to the exhaust pump 42, and the other end connected to the transfer chamber 40, and an open / close disposed in an intermediate portion of the exhaust pipe 43.
- the opening / closing valve 44 When the opening / closing valve 44 is in an open state, the gas in the transfer chamber 40 is exhausted through the exhaust pipe 43 by the exhaust pump 42, and the pressure is reduced to a predetermined pressure.
- the transport mechanism 45 is supported by the support base 46 such that the axis is in the vertical direction, a support shaft 47 that is finely moved up and down in the vertical direction, and a horizontal surface that is horizontally supported by the support shaft 47.
- the arm 48 extends and contracts inside, and a pickup hand 49 provided at the tip of the arm 48.
- the processing chambers 50, 60, and 70 are processing chambers for processing the substrate to be processed K, and a detailed description thereof is omitted. For example, HF gas, alcohol (ethanol, methanol, etc.) are omitted. ) Various processes such as etching the SiO 2 film on the substrate to be processed K with a mixed gas of vapor and N 2 gas are performed.
- the load lock chamber 10 is provided with a pressure detector 17 for detecting the pressure inside the load lock chamber 10, and a detection signal related to the pressure detected by the pressure detector 17 is sent to the load lock chamber control unit 15. It is supposed to be sent.
- each processing chamber 50 is processed by the processing chamber decompression mechanism 52, 62, 72 under the control of the other control unit (not shown) described above.
- 60 and 70 are depressurized, and the inside of the transfer chamber 40 is depressurized by the transfer chamber pressure reducing mechanism 41, and the inside of the processing chambers 50, 60 and 70 and the inside of the transfer chamber 40 are brought to substantially the same reduced pressure (vacuum) state. .
- the transfer chamber 40, the transfer mechanism 45, the transfer chamber decompression mechanism 41, the gate valves 11, 51, 61, 71, the process chambers 50, 60, 70, the process chamber decompression mechanisms 52, 62, 72 The operation is executed under the control of the other control unit (not shown).
- a plurality of substrates to be processed K are stored in the cassette 80, and a cover body 90 having the same shape is stored above the uppermost substrate to be processed K.
- the entire upper surface of the substrate to be processed K is covered with the cover body 90.
- the cassette 80 is placed on the mounting table 20 in the load lock chamber 10 such that the opening side 82 faces the transfer chamber 40.
- the transport mechanism 45 rotates the support shaft 47 about the shaft center so that the pickup hand 49 faces the load lock chamber 10.
- the gate valve 11 is opened, and the transport mechanism 45 extends the arm 48 and causes the pickup hand 49 to enter the load lock chamber 10 through the gate valve 11.
- the position of the mounting table 20 is adjusted by the elevating mechanism 21 so that the position of the pickup hand 49 is slightly below the substrate K to be taken out in the vertical direction.
- the hand 49 is inserted below the substrate K to be processed.
- the transport mechanism 45 slightly raises the support shaft 47 to receive the substrate to be processed K on the pickup hand 49, and then contracts the arm 48 to remove the substrate to be processed K from the cassette 80. At the same time, it is removed from the load lock chamber 10. Thereafter, the gate valve 11 is closed.
- the transport mechanism 45 introduces the substrate K to be processed thus taken out into a predetermined, for example, processing chamber 50. Although a specific description of the introduction operation is omitted, after that, in the processing chamber 50, a scheduled process is performed on the substrate.
- the processing chambers 50, 60, and 70 may perform the same processing or different processing.
- the processing chambers 50, 60, and 70 are sequentially passed through the substrate K to be processed. Thus, a series of processes may be performed on the target substrate K.
- the transfer mechanism 45 takes out the substrate to be processed K from the processing chambers 50, 60, and 70 and stores it again in the cassette 80 in the load lock chamber 10. .
- the purge gas supply mechanism 30 closes the purge open / close valve 35 and opens the vent open / close valve 34 to provide a large quantity.
- the purge gas is supplied into the load lock chamber 10 to bring the load lock chamber 10 to atmospheric pressure.
- the load lock chamber pressure reducing mechanism 25 closes the exhaust opening / closing valve 28.
- the timing for closing the exhaust opening / closing valve 28 may be the same as the opening operation of the vent opening / closing valve 34 or may be before the opening operation.
- the processed cassette 80 and the unprocessed cassette 80 are exchanged, and the processing is performed in the same manner thereafter.
- the load lock chamber control unit 15 performs the following operation.
- the load lock chamber control unit 15 monitors the pressure in the load lock chamber 10 detected by the pressure detector 17, and closes the purge opening / closing valve 35 when this pressure reaches a predetermined first reference pressure. Then, the supply of the purge gas to the load lock chamber 10 is stopped, and at the same time or later, the exhaust opening / closing valve 28 is closed to stop the exhaust from the load lock chamber 10. At this time, the exhaust pump 26 and the purge gas supply unit 31 may either stop their operation or continue the driven state.
- the load lock chamber control unit 15 Opens the exhaust opening / closing valve 28 (if the exhaust pump 26 is stopped, the exhaust pump 26 is also driven) to restart the exhaust from the load lock chamber 10 and at the same time for purging
- the opening / closing valve 35 is opened (when the operation of the purge gas supply unit 31 is stopped, it is operated), and the supply of the purge gas to the load lock chamber 10 is resumed.
- the load lock chamber 10 has the inside. Since the purge gas supply mechanism 30 supplies the purge gas into the load lock chamber 10 while the substrate to be processed K is waiting, the cassette 80 in which the substrate K to be processed is exposed is exposed to the purge gas flow. The purge gas flow prevents the organic matter from entering the cassette. Further, the organic substance is discharged out of the load lock chamber 10 together with the purge gas, and these actions prevent the organic substance from adhering to the substrate K to be processed.
- the exhaust from the load lock chamber 10 and the purge gas into the load lock chamber 10 are discharged.
- the supply is stopped and the pressure in the load lock chamber 10 becomes the second reference pressure, the exhaust and supply are resumed. This is because the load lock chamber 10 is supplied with purge gas while the load gas is supplied.
- the inside of the lock chamber 10 is depressurized to a predetermined pressure, even if the supply and exhaust of the purge gas are stopped thereafter, the action of preventing the organic matter from adhering to the substrate K to be processed is maintained, and the organic matter on the substrate K to be processed is maintained. This is based on the knowledge of the present inventors that the adhesion of water is within an allowable range.
- the purge gas flow is indispensable for preventing the organic matter from adhering to the substrate K to be processed.
- supply and load of the purge gas It has been found that the above action is maintained even when the exhaust from the lock chamber 10 is stopped.
- the operation is continued because the purge gas remains in the load lock chamber 10 even when the supply of the purge gas and the exhaust from the load lock chamber 10 are stopped, thereby reducing the mean free path of the organic matter. It seems to be because it is suppressed.
- the first reference pressure is preferably set within a range of 10 Pa to 30 Pa.
- the second reference pressure is preferably set within a range of 15 Pa to 300 Pa.
- the upper surface of the substrate to be processed K positioned in the uppermost layer among the substrates to be processed K stored in the cassette 80 is covered by the cover body 90 disposed above the substrate. Therefore, this cover body 90 prevents contact with organic matter, and it is possible to prevent the organic matter from adhering to the uppermost substrate to be processed K as well.
- the substrate processing system 1 can effectively prevent the organic matter from adhering to the substrate K to be processed even in such a case.
- the first reference pressure is set to 10 Pa
- the second reference pressure is set to 15 Pa
- the uppermost substrate K in the cassette 80 is covered with the cover body 90 in the load lock state. It is stored in the chamber 10, and a process of etching the SiO 2 film on the substrate K to be processed with a mixed gas of HF gas, ethanol vapor and N 2 gas is performed, and the first substrate K to be processed (the lowest level in the cassette 80).
- the etching rate and the uniformity of etching of the substrate to be processed K) and the substrate to be processed K (the uppermost substrate to be processed K in the cassette 80) kept in the load lock chamber 10 for 14 hours are compared. Both were equivalent.
- Example 3 On the other hand, the same processing as in Experimental Example 2 was performed without protecting the uppermost substrate to be processed K by the cover body 90, and the uppermost substrate K and the uppermost substrate that had been kept in the load lock chamber 10 for 14 hours. Comparing the etching rate and etching uniformity with the substrate to be processed K, the etching substrate has the etching rate of about 10% slower than that of the first substrate to be processed K, and the etching uniformity is 50%. % Worse.
- the set pressure in the load lock chamber 10 at the time of depressurization is a considerably low pressure
- one end is connected to the supply pipe 32 b upstream from the purge opening / closing valve 35, and the exhaust pipe downstream from the exhaust opening / closing valve 28.
- a pipe 38 having the other end connected to the pipe 27 may be provided, and a supply opening / closing valve 39 may be interposed in the pipe 38.
- the load lock chamber control unit 15 closes the purge opening / closing valve 35 with the purge gas supply unit 31 operated.
- the supply of the purge gas into the load lock chamber 10 is stopped by the above, and the exhaust valve 28 is closed while the exhaust pump 26 is driven, thereby stopping the exhaust from the load lock chamber 10 and exhausting the exhaust gas.
- the purge gas is supplied to the exhaust pipe 27 through the pipe 38 by opening the supply opening / closing valve 39 simultaneously with or after the stop of the engine, while the pressure in the load lock chamber 10 becomes the second reference pressure, The supply of the purge gas into the load lock chamber 10 and the exhaust from the load lock chamber 10 are restarted. Close the supplying on-off valve 39 behind which is configured so as to stop the supply of purge gas of the to the exhaust pipe 27.
- the cover body 90 has the same shape as the substrate to be processed K, but is not limited to this, and can be stored in the cassette 80 similarly to the substrate to be processed K, and at least the substrate to be processed is processed. Any shape may be used as long as the entire upper surface of the substrate K can be covered.
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Abstract
Description
被処理基板をロードロック室内に格納した後、該ロードロック室内にパージガスを供給しつつ該ロードロック室内から排気して該ロードロック室内を減圧する工程であって、前記パージガスの供給位置を前記被処理基板の上方位置に、排気位置を前記被処理基板の下方位置にそれぞれ設定するとともに、前記被処理基板を前記供給位置と排気位置との間に載置するようにした準備工程と、
前記ロードロック室に連設された減圧状態にある搬送室内の搬送機構により、前記ロードロック室内の被処理基板を取り出し、該搬送室に連設された同じく減圧状態にある処理室に搬送して該処理室内で被処理基板を処理し、処理後の被処理基板を前記搬送機構により処理室から取り出して、前記ロードロック室内に収納する処理工程とから構成される基板処理方法において、
前記準備工程では、前記パージガスの供給と排気を実施して、ロードロック室内の圧力が前記第1基準圧力となったとき前記パージガスの供給を停止するとともに、これと同時に又はこれより遅れて前記ロードロック室内の排気を停止し、排気を停止後、ロードロック室内の圧力が前記第1基準圧力よりも高い第2基準圧力となったとき前記パージガスの供給と排気を再開するようにした基板処理方法に係る。
被処理基板が格納されるロードロック室と、
前記被処理基板を処理するための処理室と、
前記ロードロック室及び処理室に連設された搬送室と、
前記搬送室内に設けられ、前記ロードロック室内の被処理基板を取り出して前記処理室内に導入するとともに、前記処理室内の被処理基板を取り出して前記ロードロック室内に収納する搬送機構と、
前記ロードロック室内の気体を排気して該ロードロック室内を減圧するロードロック室減圧手段と、
前記ロードロック室内にパージガスを供給するパージガス供給手段と、
前記ロードロック室内の圧力を検出する圧力検出手段と、
前記ロードロック室減圧手段及びパージガス供給手段の作動を制御する制御手段と、
前記搬送室内の気体を排気して該搬送室内を減圧する搬送室減圧手段と、
前記処理室内の気体を排気して該処理室内を減圧する処理室減圧手段とを備え、
前記パージガス供給手段は、前記ロードロック室内に前記パージガスを供給する供給位置が前記被処理基板の上方位置に設定され、
前記ロードロック室減圧手段は、前記ロードロック室から気体を排気する排気位置が、前記被処理基板の下方位置に設定され、
前記被処理基板が、前記供給位置と排気位置との間に載置されるように構成された基板処理システムにおいて、
前記制御手段は、
前記被処理基板が前記ロードロック室内に格納されている間、
前記パージガス供給手段により前記ロードロック室内にパージガスを供給しつつ、前記ロードロック室減圧手段により前記ロードロック室内から排気して該ロードロック室内を減圧し、前記圧力検出手段によって検出される前記ロードロック室内の圧力が第1基準圧力となったとき、前記パージガス供給手段による前記パージガスの供給を停止するとともに、これと同時に又はこれより遅れて前記ロードロック室減圧手段による前記ロードロック室内からの排気を停止する処理と、
停止後、前記圧力検出手段によって検出されるロードロック室内の圧力が前記第1基準圧力よりも高い第2基準圧力となったとき、前記パージガス供給手段によるパージガスの供給を再開するとともに、前記ロードロック室減圧手段による前記ロードロック室内からの排気を再開する処理とを実行するように構成された基板処理システムに係る。
更に、当該基板処理システムは、前記パージ用開閉バルブより上流側の前記供給管に一端が接続され、前記排気用開閉バルブより下流側の前記排気管に他端が接続された配管、及びこの配管に介在せしめられた供給用開閉バルブを備え、
前記制御手段は、前記パージガス供給部を作動させた状態で前記パージ用開閉バルブを閉じることによって前記ロードロック室内へのパージガスの供給を停止するとともに、前記排気ポンプを駆動した状態で前記排気用開閉バルブを閉じることによって前記ロードロック室内からの排気を停止するように構成され、
前記ロードロック室内からの排気を停止した後、これと同時に又はこれより遅れて前記供給用開閉バルブを開いて、前記配管を通し前記排気管に前記パージガスが供給して、該排気管内下流側に向けて流通させるとともに、前記再開処理の実行後、これと同時に又はこれより遅れて前記供給用開閉バルブを閉じて、前記排気管へのパージガスの供給を停止するように構成されているのがより好ましい。
因みに、前記第1基準圧力を10Paに設定し、第2基準圧力を15Paに設定するとともに、カセット80内の最上位の被処理基板Kをカバー体90によって覆わない状態で当該カセット80をロードロック室10内に格納し、HFガス、エタノール蒸気及びN2ガスの混合ガスにより被処理基板K上のSiO2膜をエッチングする処理を行い、最初の被処理基板K(カセット80内の最低位の被処理基板K)と、ロードロック室10内に3時間待機させた被処理基板K(カセット80内の最上位の被処理基板K)との、エッチングレート及びエッチングの均一性を比較したところ、両者で同等であった。
因みに、上記と同様、前記第1基準圧力を10Paに設定し、第2基準圧力を15Paに設定するとともに、カセット80内の最上位の被処理基板Kをカバー体90によって覆った状態でロードロック室10内に格納して、HFガス、エタノール蒸気及びN2ガスの混合ガスにより被処理基板K上のSiO2膜をエッチングする処理を行い、最初の被処理基板K(カセット80内の最低位の被処理基板K)と、ロードロック室10内に14時間待機させた被処理基板K(カセット80内の最上位の被処理基板K)との、エッチングレート及びエッチングの均一性を比較したところ、両者で同等であった。
一方、最上位の被処理基板Kをカバー体90によって保護しないで、実験例2と同様の処理を行い、最初の被処理基板Kと、ロードロック室10内に14時間待機させた最上位の被処理基板Kとのエッチングレート及びエッチングの均一性を比較すると、最上位の被処理基板Kは最初の被処理基板Kに比べて、エッチングレートが約10%遅くなり、エッチングの均一性が50%悪くなった。
10 ロードロック室
12 排気孔
13 給気孔
15 ロードロック室制御部
17 圧力検出器
25 ロードロック室減圧機構
26 排気ポンプ
27 排気管
28 排気用開閉バルブ
30 パージガス供給機構
31 パージガス供給部
32 供給管
33 ディフューザ
34 ベント用開閉バルブ
35 パージ用開閉バルブ
38 配管
39 供給用開閉バルブ
40 搬送室
41 搬送室減圧機構
45 搬送機構
50,60,70 処理室
52,62,72 処理室減圧機構
80 カセット
90 カバー体
K 被処理基板
Claims (12)
- 被処理基板をロードロック室内に格納した後、該ロードロック室内にパージガスを供給しつつ該ロードロック室内から排気して該ロードロック室内を減圧する工程であって、前記パージガスの供給位置を前記被処理基板の上方位置に、排気位置を前記被処理基板の下方位置にそれぞれ設定するとともに、前記被処理基板を前記供給位置と排気位置との間に載置するようにした準備工程と、
前記ロードロック室に連設された減圧状態にある搬送室内の搬送機構により、前記ロードロック室内の被処理基板を取り出し、該搬送室に連設された同じく減圧状態にある処理室に搬送して該処理室内で被処理基板を処理し、処理後の被処理基板を前記搬送機構により処理室から取り出して、前記ロードロック室内に収納する処理工程とから構成される基板処理方法において、
前記準備工程では、前記パージガスの供給と排気を実施して、ロードロック室内の圧力が前記第1基準圧力となったとき前記パージガスの供給を停止するとともに、これと同時に又これより遅れて前記ロードロック室内の排気を停止し、排気を停止後、ロードロック室内の圧力が前記第1基準圧力よりも高い第2基準圧力となったとき前記パージガスの供給と排気を再開するようにしたことを特徴とする基板処理方法。 - 前記準備工程において、前記ロードロック室の排気位置に接続した排気管に前記パージガスを供給して、該排気管内下流側に向けて該パージガスを流通させるようにした請求項1記載の基板処理方法であって、
前記排気を停止した後、これと同時に又はこれより遅れて前記排気管へのパージガスの供給を開始し、前記パージガスの供給と排気を再開後、これと同時に又はこれより遅れて前記排気管へのパージガスの供給を停止するようにしたことを特徴とする基板処理方法。 - 前記第1基準圧力を10Pa~30Paの範囲内に設定し、前記第2基準圧力を15Pa~300Paの範囲内に設定したことを特徴とする請求項1又は2記載の基板処理方法。
- 複数の前記被処理基板を、垂直方向に所定間隔をあけてカセット内に収納した状態で前記ロードロック室内の前記供給位置と排気位置との間に載置するとともに、前記カセットに収納される被処理基板の内、最上位の被処理基板の少なくとも上面全面を、その上方に設けたカバー体によって覆うようにしたことを特徴とする請求項1又は2記載の基板処理方法。
- 前記被処理基板と同形状の前記カバー体を用い、該カバー体を、前記最上位の被処理基板の上方に位置するように前記カセット内に収納して、前記最上位の被処理基板の上面全面を覆うようにしたことを特徴とする請求項4記載の基板処理方法。
- 前記カセットに天板を設け、この天板により前記最上位の被処理基板の少なくとも上面全面を覆うようにしたことを特徴とする請求項4記載の基板処理方法。
- 被処理基板が格納されるロードロック室と、
前記被処理基板を処理するための処理室と、
前記ロードロック室及び処理室に連設された搬送室と、
前記搬送室内に設けられ、前記ロードロック室内の被処理基板を取り出して前記処理室内に導入するとともに、前記処理室内の被処理基板を取り出して前記ロードロック室内に収納する搬送機構と、
前記ロードロック室内の気体を排気して該ロードロック室内を減圧するロードロック室減圧手段と、
前記ロードロック室内にパージガスを供給するパージガス供給手段と、
前記ロードロック室内の圧力を検出する圧力検出手段と、
前記ロードロック室減圧手段及びパージガス供給手段の作動を制御する制御手段と、
前記搬送室内の気体を排気して該搬送室内を減圧する搬送室減圧手段と、
前記処理室内の気体を排気して該処理室内を減圧する処理室減圧手段とを備え、
前記パージガス供給手段は、前記ロードロック室内に前記パージガスを供給する供給位置が前記被処理基板の上方位置に設定され、
前記ロードロック室減圧手段は、前記ロードロック室から気体を排気する排気位置が、前記被処理基板の下方位置に設定され、
前記被処理基板が、前記供給位置と排気位置との間に載置されるように構成された基板処理システムにおいて、
前記制御手段は、
前記被処理基板が前記ロードロック室内に格納されている間、
前記パージガス供給手段により前記ロードロック室内にパージガスを供給しつつ、前記ロードロック室減圧手段により前記ロードロック室内から排気して該ロードロック室内を減圧し、前記圧力検出手段によって検出される前記ロードロック室内の圧力が第1基準圧力となったとき、前記パージガス供給手段による前記パージガスの供給を停止するとともに、これと同時に又はこれより遅れて前記ロードロック室減圧手段による前記ロードロック室内からの排気を停止する処理と、
停止後、前記圧力検出手段によって検出されるロードロック室内の圧力が前記第1基準圧力よりも高い第2基準圧力となったとき、前記パージガス供給手段によるパージガスの供給を再開するとともに、前記ロードロック室減圧手段による前記ロードロック室内からの排気を再開する処理とを実行するように構成されていることを特徴とする基板処理システム。 - 請求項7に記載した基板処理システムであって、
前記パージガス供給手段は、一端が前記ロードロック室の供給位置に接続される供給管、該供給管に介在せしめられたパージ用開閉バルブ、及び前記供給管の他端に接続されたパージガス供給部を有し、
前記ロードロック室減圧手段は、一端が前記ロードロック室の排気位置に接続される排気管、該排気管に介在せしめられた排気用開閉バルブ、及び前記排気管の他端に接続する排気ポンプを有し、
前記基板処理システムは、更に、前記パージ用開閉バルブより上流側の前記供給管に一端が接続され、前記排気用開閉バルブより下流側の前記排気管に他端が接続された配管、及びこの配管に介在せしめられた供給用開閉バルブを備え、
前記制御手段は、前記パージガス供給部を作動させた状態で前記パージ用開閉バルブを閉じることによって前記ロードロック室内へのパージガスの供給を停止するとともに、前記排気ポンプを駆動した状態で前記排気用開閉バルブを閉じることによって前記ロードロック室内からの排気を停止するように構成され、
前記ロードロック室内からの排気を停止した後、これと同時に又はこれより遅れて前記供給用開閉バルブを開いて、前記配管を通し前記排気管に前記パージガスを供給して、該排気管内下流側に向けて流通させるとともに、前記再開処理の実行後、これと同時に又はこれより遅れて前記供給用開閉バルブを閉じて、前記排気管へのパージガスの供給を停止するように構成されていることを特徴とする基板処理システム。 - 前記第1基準圧力が10Pa~30Paの範囲内に設定され、前記第2基準圧力が15Pa~300Paの範囲内に設定されていることを特徴とする請求項7又は8記載の基板処理システム。
- 請求項7又は8に記載した基板処理システムであって、
複数の被処理基板を、垂直方向に所定間隔をあけて収納するカセットを更に備え、
該カセットは、前記ロードロック室内の前記供給位置と排気位置との間に載置され、
更に、該カセットは、収納された被処理基板の内、最上位の被処理基板の上方に配置されて、少なくとも該最上位の被処理基板の上面全面を覆うカバー体を備えていることを特徴とする基板処理システム。 - 前記カバー体が、前記被処理基板と同じ形状を備えていることを特徴とする請求項10記載の基板処理システム。
- 前記カバー体は、前記カセットの天板を構成し、該天板が前記最上位の被処理基板の少なくとも上面全面を覆うように構成されていることを特徴とする請求項10記載の基板処理システム。
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