WO2011152441A1 - 微小材料ひずみ計測装置及びその方法 - Google Patents
微小材料ひずみ計測装置及びその方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 134
- 238000000034 method Methods 0.000 title claims description 13
- 238000005259 measurement Methods 0.000 claims abstract description 178
- 230000003287 optical effect Effects 0.000 claims description 57
- 238000012545 processing Methods 0.000 claims description 37
- 238000006073 displacement reaction Methods 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 description 31
- 238000009826 distribution Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000003014 reinforcing effect Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
- G01L1/241—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet by photoelastic stress analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
- G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
- G01B11/162—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means by speckle- or shearing interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/02—Details
- G01N3/06—Special adaptations of indicating or recording means
- G01N3/068—Special adaptations of indicating or recording means with optical indicating or recording means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/026—Specifications of the specimen
- G01N2203/0286—Miniature specimen; Testing on microregions of a specimen
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/0641—Indicating or recording means; Sensing means using optical, X-ray, ultraviolet, infrared or similar detectors
- G01N2203/0647—Image analysis
Definitions
- the present invention relates to a micromaterial strain measuring apparatus and method.
- microstructures that integrate mechanical, electronic, optical, chemical, and other composite functions have been manufactured by semiconductor microfabrication technologies such as photolithography technology, thin film molding technology, and etching technology, which are mainly performed on silicon substrates. It is becoming.
- the microstructure is called a MEMS (Micro Electro Mechanical Systems) device, and is applied to actuators, pressure sensors, temperature sensors, acceleration sensors, angular acceleration sensors, and the like.
- MEMS devices a submicron to micron order thin film formed on a substrate is used as a basic element member.
- Submicron to micron order thin films may have different material properties from bulk materials, and it is necessary to directly evaluate the thin film materials for mechanical properties (elastic modulus, strength, fracture toughness, fatigue properties, etc.). Therefore, for the evaluation of mechanical properties, for example, a micromaterial strain measuring apparatus shown in Patent Document 1 has been proposed.
- Patent Document 1 the deformation of a minute material due to tensile stress or compressive stress is measured with a scanning probe microscope. Specifically, a minute deformation can be measured by providing a minute grid-like line pattern serving as a mark on the surface of the minute material and measuring the change of the mark with a scanning probe microscope.
- Patent Document 1 a mark is provided on a minute material. For this reason, there is a possibility that the surface of the fine material may be damaged when the mark is provided, and the fine material may be destroyed at the stage before measurement.
- the cantilever used in the scanning probe microscope performs measurement in a state where it is almost in contact with the cantilever, it is difficult to adjust the position of the cantilever, and an extremely neat measurement environment is required.
- the area is also narrow, and even if the area is narrow, a long time is required for measurement.
- the relationship between the tensile stress or the compressive stress and the distance is obtained by using the distance between the two chuck portions fixing the minute material as it is without providing a mark.
- the mark is marked with a paint or the like in consideration of minimizing the influence on the deformation of the minute material and preventing the material from being modified.
- it has also been proposed to obtain a strain from the amount of movement of the target by photographing the target with a CCD camera or the like.
- the measurement object is a minute material, it is considered difficult to accurately obtain the strain against the tensile stress or the compressive stress.
- a method of obtaining a strain due to a tensile stress or a compressive stress from a change in an interference pattern (speckle pattern) due to the scattered light of the laser is also conceivable by irradiating an irregular surface shape of a minute material with a laser.
- the speckle pattern is not a direct representation of the surface shape, but is based on irregular surface shape features. For this reason, in the case of minute materials, the required resolution cannot always be ensured.
- the speckle pattern used as the reference point in the initial state changes, or the speckle pattern disappears from the observed field of view. There is a fear. That is, even if the speckle pattern is used, it is considered difficult to accurately obtain the strain with respect to the tensile stress or the compressive stress because the measurement object is a minute material.
- the present invention has been made to solve the above-described problems, and a micromaterial strain measuring apparatus and method capable of accurately measuring strain against tensile stress or compressive stress while being non-contact with the micromaterial. It is an issue to provide.
- the present invention provides a strain generating unit that applies tensile stress or compressive stress to a minute material to generate strain in the minute material and measures the tensile stress or compressive stress, and measurement that measures deformation of the minute material due to the strain.
- a fine material strain measuring apparatus having a white light source that irradiates the measurement target region of the fine material to the measurement unit, and a measurement that is light from the measurement target region irradiated by the white light source
- a two-dimensional photoelectric sensor that detects interference light formed by light and reference light that is light from a reference mirror irradiated with light branched from the white light source, and the interference light is received by the two-dimensional photoelectric sensor
- a first objective lens including the reference mirror and a position from the position of the first objective lens at which the contrast of the interference light is maximized by relative scanning in the optical axis direction of the first objective lens.
- An image processing apparatus for measuring the two, and the strain generating part supports two chuck parts for holding the minute member, and supports one of the two chuck parts to apply the tensile stress or the compressive stress.
- the tensile stress or compressive stress measured by the stress detection means and the first objective lens are relatively scanned in the direction of the optical axis, so that the plurality of marks changed by the strain are lost. Based on the distance between the gauge of the number of said plurality of measured it is identified to follow without Rukoto, by the strain is measured with respect to the tensile stress also compressive stress is obtained by solving the above problems.
- a measurement unit includes a white light source, a two-dimensional photoelectric sensor that detects interference light formed by measurement light and reference light, a first objective lens that causes the two-dimensional photoelectric sensor to receive the interference light, and an image. And a processing device.
- the first objective lens is scanned relative to the minute material in the optical axis direction. That is, a scanning white interferometer (described later) is configured by the above-described constituent members. For this reason, since the field of view (the surface, not the point) of the first objective lens is measured at a time, the measurement time of the measurement target region can be shortened compared to the conventional case.
- the image processing apparatus measures the three-dimensional shape of the measurement target region from the position of the first objective lens where the contrast of the interference light is maximum, the three-dimensional shape of the measurement target region can be quickly obtained with high resolution. it can. For this reason, the deformation behavior of the measurement target region of the micromaterial at the micro level can be observed in situ. At this time, since the minute material and the measuring unit are not in contact with each other, the minute material can be handled more easily than in the past. Further, a white interferometer can obtain a three-dimensional shape of a direct measurement target region, which is different from an interference pattern (spec pattern) due to scattered light based on a surface shape (three-dimensional shape).
- the image processing apparatus of the white interferometer can directly set the predetermined position of the surface shape in the measurement target region as the target point and measure the position between the target points. be able to.
- the white interferometer measures the surface shape of the measurement target region including the predetermined position. For this reason, when the strain is generated in the minute material by the moving mechanism of the strain generating portion, even if the position of the gauge changes including the height, the change can be continuously measured. In other words, since it is possible to follow and specify without losing sight of the set mark, it is possible to stably measure the distance between the changing marks.
- the position within the measurement target region can be appropriately set as the target.
- the tensile stress or the compressive stress applied to the micromaterial is measured by the stress detecting means of the strain generating portion, it is possible to accurately measure the strain with respect to the tensile stress or the compressive stress.
- JIS C5630-2, 3 established on March 20, 2009. Strain measurement conforming to can be performed.
- the nominal strain when obtaining the strain from the position between the changing gauge points, the nominal strain may be obtained, but the distance between the gauge points in the state where the strain is not present and the strain are added. It is preferable that the true strain is obtained from the distance between the plurality of reference points. In this case, the strain is not limited to a very small strain, and the strain can be obtained with high accuracy even when the measurement target region is greatly deformed.
- the distance between the marks can be obtained, but the plurality of marks may be three or more.
- the strain can be obtained as a distribution in the measurement target region. For this reason, since the strain distribution in the measurement target region can be evaluated in relation to the surface shape, more detailed mechanical properties of the micromaterial can be grasped.
- the measurement unit is configured so that the positional relationship with the first objective lens is constant in the optical axis direction, and its own focal position is automatically determined from the imaging state of the measurement target region in the two-dimensional photoelectric sensor.
- the focal position of the first objective lens can be quickly adjusted to the measurement target region.
- the state of the measurement target region can be observed with the second objective lens.
- the automatic adjustment function of the focal position of the second objective lens enables measurement of a three-dimensional shape at a corresponding speed.
- the micromaterial is placed in the middle of processing when the micromaterial is held in the strain generating unit, After holding, the fine material can be processed into a final shape to be measured. Then, since mechanical stress concentration on the measurement target region can be prevented at the time of holding, it is possible to effectively prevent the micromaterial from being destroyed at the time of holding. Then, since the minute material is processed in a non-contact state using a laser, the influence on the measurement target region at the time of the processing can be minimized. As a result, it is possible to prevent the fine material from being damaged at the stage of holding the fine material.
- the chuck is used when holding the minute material.
- the position of the part can be adjusted in three axial directions. For this reason, the stress applied to the minute material during holding can be reduced as much as possible, so that the relationship between strain and stress can be measured more accurately, and destruction during holding of the minute material can be avoided. it can.
- the strain generating part is movable in a plane perpendicular to the optical axis direction and can be tilted with respect to the optical axis direction, the strain generating part is held by the strain generating part. It is possible to quickly adjust the measurement target region of the minute material on the optical axis of the first objective lens. At the same time, the inclination of the measurement target region of the minute material can be reduced in advance (horizontal state). For this reason, since the frequency
- the entire measurement target region can be obtained by a synergistic effect with the automatic adjustment function of the focal position of the second objective lens. It becomes possible to continuously measure the surface shape with good followability.
- the present invention applies a tensile stress or a compressive stress to a minute material to generate strain in the minute material, measures the tensile stress or compressive stress, and measures the deformation of the minute material due to the strain.
- a method for measuring strain of a micromaterial comprising: a step of holding the micromaterial; a step of generating the strain in the held micromaterial and measuring the tensile stress or compressive stress; and the strain is applied.
- Irradiating the measurement target region of the minute material with the white light source, and the reference light being the light from the reference mirror irradiated with the measurement light that is the light from the measurement target region and the light branched from the white light source A step of causing the two-dimensional photoelectric sensor to receive the interference light formed by the light with the first objective lens including the reference mirror, and relatively scanning the first objective lens in the optical axis direction.
- a step of measuring the three-dimensional shape of the measurement target region from the position of the first objective lens at which the contrast of the interference light is maximized, and the measurement target changed by the strain based on the measured three-dimensional shape Tracking and specifying a plurality of reference points that are positions for reference in measuring displacement in a region without losing sight, measuring the distance between the plurality of reference points, and the obtained plurality of reference points And a step of measuring the strain with respect to the tensile stress or compressive stress based on the distance between them and the tensile stress or compressive stress.
- the present invention includes a step of continuously applying the tensile stress or compressive stress to the micromaterial by deforming the micromaterial at a constant speed. Is a predetermined strain rate, the thermal equilibrium state caused by the deformation of the minute material can be kept constant. For this reason, measurement with higher accuracy can be realized. Further, even if the tensile stress or compressive stress differs depending on the strain rate (deformation rate), the tensile stress or compressive stress can be obtained more accurately if the predetermined strain rate is constant. .
- FIG. 1 is an overall perspective view of a minute material strain measuring apparatus to which an example of an embodiment of the present invention is applied.
- Schematic diagram showing the schematic configuration of the white interferometer in the measurement unit The figure which shows the flowchart which shows the measurement process of the minute material distortion measurement method
- a bird's-eye view (A) showing an example of the three-dimensional shape of the measurement target region and a contour map in the Z direction
- B Schematic diagram showing an example of changes in gauge points when the distance between chucks is changed at a constant displacement
- the minute material strain measuring apparatus 100 includes a position adjusting unit 114, a strain generating unit 130, and a measuring unit 150.
- the position adjustment unit 114 is for adjusting the position of the measurement target region 108 of the minute material 102 and is fixed on the base plate 102.
- the strain generating unit 130 applies tensile stress or compressive stress to the micromaterial 102 to generate strain in the micromaterial 102 and measures the tensile stress or compressive stress.
- the measuring unit 150 measures the deformation of the minute material 102 due to strain.
- the fine material 102 includes a support base 104 and a thin film 106 formed on the support base 104 as shown in FIG. 2C, which is a broken line portion of FIG. 2A.
- the main part of the minute material 102 shown in FIG. 2C has a length and a width of a parallel part 104C described later of 1 mm or less. Since only the portion of the thin film 106 is a measurement target, the measurement result of the thin film 106 is obtained from the measurement result of the support base 104 and the micromaterial 102 on which the thin film 106 is formed and the measurement result of only the support base 104.
- a parallel portion 104C is provided between the two grip portions 104A via a shoulder portion 104B that reduces the width of the grip portion 104A with a curvature R.
- the length Lc of the parallel portion 104C is set to be 2.5 times or more the width b of the parallel portion 104C.
- a measurement target region 108 can be provided in the central portion of the parallel portion 104C as shown in FIG. This measurement target region 108 is coincident with a field of view by a first objective lens 166 described later, and is about 100 ⁇ m square.
- the measurement target area is wider than the field of view of the first objective lens 166, has a width b in the Y direction, and is 80% or less of the length Lc of the parallel portion 104C in the expansion / contraction direction (X direction) and twice the width b.
- the length may be the above length (for example, the measurement target region may be wider than the field of view of the first objective lens 166 and may extend to the vicinity of the two shoulder portions 104B). In that case, it is possible to provide two target points desired in the above-mentioned JIS in the measurement target region.
- the thin film 106 is provided so as to cover at least the entire surface of the measurement target region 108.
- the support base 104 is silicon or the like, and the thin film 106 is a silicon film, a silicon oxide film, silicon nitride, or the like.
- the reference point is a reference position for measuring the displacement in the measurement target region 108.
- symbol a is the film thickness of the thin film 106
- symbol S is the cross-sectional area of the thin film 106 at the parallel portion 104C.
- the position adjusting unit 114 includes a Y stage 116, an X stage 118, a ⁇ stage 120, a ⁇ stage 122, and an ⁇ stage 124 as shown in FIG.
- the Y stage 116 is fixed on a base plate 110 disposed on a vibration isolation mechanism (not shown).
- the X stage 118 is fixed on the Y stage 116 perpendicular to the Y stage 116.
- the Y stage 116 and the X stage 118 allow the strain generator 130 fixed on the ⁇ stage 124 to be moved in a plane (XY direction) perpendicular to the optical axis direction.
- the ⁇ stage 120 has a rotation axis in the optical axis direction (Z direction) and is fixed on the X stage 118.
- Each of the ⁇ stage 124 and the ⁇ stage 122 is a gonio stage that inclines its surface with respect to the optical axis direction (Z direction).
- the ⁇ stage 122 is fixed on the ⁇ stage 120, and the ⁇ stage 124 is fixed to the ⁇ stage 122 so as to be orthogonal to the tilt rotation axis of the ⁇ stage 122.
- the strain generation unit 130 fixed to the ⁇ stage 124 can be freely tilted with respect to the optical axis direction by the ⁇ stage 120, the ⁇ stage 122, and the ⁇ stage 124.
- the strain generator 130 is fixed on the ⁇ stage 124. As shown in FIGS. 3A and 3B, the strain generator 130 includes two chucks 134 and 136, a Y stage 138, a fine movement X stage 140 (moving mechanism), an X stage 142, and a Z stage on a base plate 132. 144 and a load cell 146. A Y stage 138 is fixed on the base plate 132, and a fine movement X stage 140 is fixed thereon. And the chuck
- the fine movement X stage 140 is for applying a tensile stress to the fine material 102 and uses a piezoelectric element (for example, PZT) as a drive source.
- a piezoelectric element for example, PZT
- fine movement X stage 140 can be controlled with an accuracy of, for example, 10 nm.
- the X stage 142 is fixed to the base plate 132 at a predetermined distance from the Y stage 138, and the Z stage 144 is fixed thereon.
- a load cell 146 stress detection means
- the load cell 146 is a strain gauge type load cell, and can detect (measure or measure) both dynamic stress and static stress. Specifically, for example, the detection resolution of the load cell 146 is 200 ⁇ N, and the maximum allowable load is about 2N.
- the chuck portions 134 and 136 hold the grip portion 104 ⁇ / b> A of the minute material 102.
- the strain generating unit 130 includes two chuck units 134 and 136 for holding the minute material 102, and one chuck unit 134 (136) is in a triaxial direction perpendicular to the other 136 (134). The position can be relatively adjusted.
- the two chuck portions 134 and 136 are provided with flat plate-shaped stopper members 134A and 136A for pressing the grip portion 104A of the minute material 102 from the upper surface, respectively.
- the measurement unit 150 is fixed to a bracket 112 that rises vertically from the base plate 110 as shown in FIG.
- the measurement unit 150 includes a Z stage 152, a lens barrel 154, a white light source 156, a slider 162, a fine movement Z stage 164, a first objective lens 166, a second objective lens 168, and a CCD camera 170 (two-dimensional photoelectric sensor).
- the Z stage 152 is fixed to the bracket 112, and the lens barrel 154 is fixed to the movable part thereof. In the present embodiment, the stroke of the Z stage 152 is 50 mm.
- the lens barrel 154 is provided with an epi-illumination unit 154A, and a white light source 156 is attached to the upper part thereof.
- the white light source 156 is used to irradiate the measurement target region 108 of the minute material 102.
- the white light source 156 is a white LED, but may be a halogen lamp, a xenon lamp, a mercury lamp, a metal halide lamp, an SLD (super luminescence diode), or the like having a spectrum spread to some extent.
- the lens barrel 154 includes a reflection mirror 158 and a half mirror 160 therein as shown in FIG.
- the reflection mirror 158 and the half mirror 160 can guide the light emitted from the white light source 156 onto the optical axis O.
- a first objective lens 166 and a second objective lens 168 are attached to the lower portion of the lens barrel 154 facing the strain generation unit 130 via a slider 162.
- the slider 162 moves the first objective lens 166 and the second objective lens 168 in the Y direction, so that the position in the optical axis direction (Z direction) is not changed, and the first objective lens is placed on the optical axis O shown in FIG.
- the lens 166 and the second objective lens 168 can be interchanged. That is, the positional relationship between the first objective lens 166 and the second objective lens 168 is constant in the optical axis direction.
- the focal positions of the first objective lens 166 and the second objective lens 168 coincide with each other in the optical axis direction (Z direction).
- the focal position of the second objective lens 168 is automatically adjusted from the imaging state of the measurement target region 108 in the CCD camera 170 described later. For this reason, when the focal position of the second objective lens 168 is automatically adjusted, the focal position alignment of the first objective lens 166 is completed simply by replacing the second objective lens 168 with the first objective lens 166 by the slider 162. .
- a fine movement Z stage 164 is disposed between the first objective lens 166 and the slider 162.
- Fine movement Z stage 164 can scan first objective lens 166 in the optical axis direction (Z direction).
- Fine movement Z stage 164 can be controlled with a resolution of 0.1 nm using a piezoelectric element (for example, PZT) as a drive source.
- the first objective lens 166 includes a lens 166B, a half mirror 166C, and a reference mirror 166D inside the holder 166A, and constitutes a Mirau type interference optical system.
- the half mirror 166C and the reference mirror 166D are disposed on the optical axis O. That is, the half mirror 166C branches the light emitted from the lens 166B.
- the reference mirror 166D reflects the branched light to form reference light.
- the light from the measurement target region 108 that has passed through the half mirror 166C forms measurement light.
- the second objective lens 168 is used to initially observe the measurement target region 108 and to determine the focal position of the first objective lens 166.
- the magnifications of the first objective lens 166 and the second objective lens 168 are 50 times and 20 times, respectively. For this reason, the horizontal resolution by the first objective lens 166 is set to submicron from the relationship with the size of one pixel of the CCD camera 170.
- a CCD camera 170 is attached to the top of the lens barrel 154.
- the CCD camera 170 is a two-dimensional photoelectric sensor that receives light from the first objective lens 166 or the second objective lens 168. That is, the white light source 156 and the first objective lens 166 form white interference light on the light receiving surface of the CCD camera 170. That is, the measurement unit 150 uses a fine movement Z stage 164 to constitute a scanning white interferometer. The principle of the white interferometer will be described below with reference to FIG.
- the light emitted from the white light source 156 passes through the epi-illumination unit 154A of the lens barrel 154, is made to coincide with the optical axis O by the reflection mirror 158 and the half mirror 160, and enters the first objective lens 166.
- the light emitted from the lens 166B of the first objective lens 166 is branched by the half mirror 166C in the holder 166A.
- the light that has not been branched passes through the half mirror 166C and irradiates the measurement target region 108.
- the light scattered by the measurement target region 108 (measurement light from the measurement target region 108 irradiated by the white light source 156) is incident on the half mirror 166C of the first objective lens 166 again.
- the light branched by the half mirror 166C is reflected by the reference mirror 166D in the holder 166 and reflected again by the half mirror 166C (light from the reference mirror irradiated with the light branched from the white light source 156). Is the reference light).
- the measurement light and the reference light are overlapped by the half mirror 166C, and both are imaged on the light receiving surface of the CCD camera 170 by the lens 166B to form a two-dimensional interference pattern (interference light) (first objective).
- the interference light is received by the CCD camera 170 by the lens 166).
- This two-dimensional interference pattern is caused by a difference in optical path length between the measurement light and the reference light.
- the white light source 156 Since the white light source 156 has a certain spectral width, the coherence is low (the coherent length is short). Therefore, the range in which the two-dimensional interference pattern appears in the optical axis direction is narrow, and an interference image (bright / dark pattern) with the maximum contrast can be obtained at a position where the optical path lengths match. That is, the first objective lens 166 is scanned relative to the minute material 102 in the optical axis direction so that the contrast is maximum for each pixel of the CCD camera 170.
- the height of the measurement target region 108 in the Z direction is 3D shape measurement.
- the scanning of the first objective lens 166 is performed by the fine movement Z stage 164. In white light, since the range in which the interference pattern appears is narrower than when a single spectrum is used, the three-dimensional shape of the measurement target region 108 can be measured with high resolution.
- An image processing apparatus (not shown) is connected to the CCD camera 170.
- the image processing apparatus can obtain the height of each pixel of the CCD camera 170 in the Z direction based on the position signal of the fine movement Z stage 164. For this reason, the image processing apparatus can measure the three-dimensional shape of the measurement target region 108 described above.
- the image processing apparatus determines two reference points in the measurement target region 108 based on the obtained three-dimensional shape of the measurement target region 108, and sets the two points each time the distance between the chuck portions 134 and 136 changes. Measure the distance between two gauge points.
- the image processing apparatus can obtain the relationship between the true strain ⁇ t and the stress ⁇ shown below and output the relationship to a monitor (not shown).
- the monitor can display a two-dimensional interference pattern by the first objective lens 166, a measured three-dimensional shape image, and a substantial image of the measurement target region 108 observed by the second objective lens 168.
- ⁇ Ld / S (2)
- the cross-sectional area in the initial state without distortion is used as the cross-sectional area S
- the true stress ⁇ t is obtained, the cross-sectional area that changes with each distortion may be used.
- the lens barrel 154 of the measuring unit 150 is provided with a laser processing unit that irradiates a laser capable of processing the minute material 102. For this reason, the fine material 102 held by the strain generation unit 130 on the ⁇ stage 124 can be moved on the optical axis of the laser processing unit by adjusting the positions of the Y stage 116 and the X stage 118.
- the final minute material 102 to be measured is molded by irradiating the minute material 102 being processed with laser.
- the minute material 102 is produced (step S2). Specifically, as shown in FIG. 2B, a parallel portion 104C of the support base 104 that supports the thin film 106 is formed. At this time, the curvature radius R is sufficiently large so that stress concentration does not occur in the shoulder 104B, and the shoulder 104B is formed as smoothly as possible. And the support base 104 is made into the form which left the reinforcement part 104D. Then, the entire support base 104 is placed in an apparatus for forming the thin film 106 to be measured, and the film thickness a to be measured is formed. The film thickness a is measured at the time of thin film formation, and the accuracy is within 5%.
- the minute material 102 is held (step S4). Specifically, the support base 104 in FIG. 2B on which the thin film 106 is formed is fixed to the chuck portions 134 and 136 of the strain generation unit 130 shown in FIGS. The Y stage 138, the X stage 142, and the Z stage 144 are adjusted so that the two chuck portions 134 and 136 come to the positions of the two grip portions 104A of the minute material 102. Then, the minute material 102 is placed on the chuck portions 134 and 136 with the stop members 134A and 136A removed. Then, the grip portion 104A is temporarily fixed by the stop members 134A and 136A.
- the Y stage 138, the X stage 142, and the Z stage 144 are finely adjusted so that the load detected by the load cell 146 becomes zero. That is, one chuck part 134 (136) is relatively adjusted with respect to the other 136 (134) in three axial directions orthogonal to each other.
- the gripping portion 104A is fixed by the stop members 134A and 136A, and at the same time, the Y stage 138, the X stage 142, and the Z stage 144 are also fixed in that state.
- the stop members 134A and 136A are screwed to the chuck portions 134 and 136, the force applied to the grip portion 104A can be adjusted by the amount of rotation of the screws.
- the reinforcing portion 104D of the support base 104 of the minute material 102 is cut (step S6). Specifically, the reinforcing part 104D of the micromaterial 102 is moved by the Y stage 116 and the X stage 118 on the optical axis of the laser processing part of the measuring part 150, and the reinforcing part 104D is cut with a laser.
- the reinforcing part 104D of the micromaterial 102 is moved by the Y stage 116 and the X stage 118 on the optical axis of the laser processing part of the measuring part 150, and the reinforcing part 104D is cut with a laser.
- the final minute material 102 to be measured shown in FIG. Therefore, when the minute material 102 is held, the minute material 102 is protected from destruction by the presence of the reinforcing portion 104D, and the measurement target region 108 can be measured with high accuracy at the measurement stage of the minute material 102.
- the position adjustment unit 114 shown in FIG. 1 moves the strain generation unit 130 to a predetermined position. That is, the measurement target region 108 of the micromaterial 102 held by the strain generation unit 130 is moved on the optical axis O by moving it in a plane perpendicular to the optical axis O using the Y stage 116 and the X stage 118. Then, the level of the thin film 106 of the minute material 102 is adjusted by the ⁇ stage 120, the ⁇ stage 122, and the ⁇ stage 124. That is, the minute material 102 is inclined with respect to the optical axis direction.
- the measurement target region 108 of the held minute material 102 is irradiated with light by the white light source 156.
- the focal position of the second objective lens 168 is automatically adjusted from the imaging state of the measurement target region 108 in the CCD camera 170 using the Z stage 152.
- the measurement target area 108 is observed with the second objective lens 168, and the position of the measurement target area 108 is determined with the Y stage 116 and the X stage 118.
- the slider 162 is moved to place the first objective lens 166 on the optical axis O. At this time, the surface of the measurement target region 108 comes to the focal position of the first objective lens 166.
- the three-dimensional shape of the minute material 102 is measured. Specifically, the interference light formed by the measurement light from the measurement target region 108 and the reference light from the reference mirror 166D irradiated with the light branched from the white light source 156 is converted into a CCD camera by the first objective lens 166. 170 receives light. Then, using the fine movement Z stage 164, the first objective lens 166 is scanned relative to the minute material 102 in the optical axis direction. Then, by obtaining the Z-direction position that maximizes the contrast due to white interference for each pixel of the CCD camera 170, measurement is performed from the output of the CCD camera 170, that is, from the position of the first objective lens 166 that maximizes the contrast of the interference light.
- the three-dimensional shape of the target area 108 is measured.
- the three-dimensional shape of the measurement target region 108 is obtained as a numerical value indicating the height in the Z direction of the measurement target region 108 of each pixel of the CCD camera 170. That is, the numerical values are measured in a matrix shape assuming the field of view of the CCD camera 170, whereby the three-dimensional shape of the measurement target region 108 is obtained.
- spreadsheet software or the like is used, and color-coded display, contour map display (FIG. 6 (B)), or bird's-eye view display (FIG. 6 (A) is used. )).
- the three-dimensional shape of the measurement target region 108 can be easily grasped. For this reason, it is easy to determine a reference point to be described later, and even if the reference point changes, it can be easily followed and specified.
- the level of the measurement target region 108 of the micromaterial 102 is adjusted by the ⁇ stage 120, the ⁇ stage 122, and the ⁇ stage 124 so that the surface of the micromaterial 102 becomes horizontal on average. adjust.
- the measurement of the three-dimensional shape of the micromaterial 102 and the adjustment of the horizontality of the micromaterial 102 are repeated as necessary until a predetermined level according to the measurement accuracy is obtained.
- the fine material 102 can be accurately arranged, and the reliability of the strain measurement itself can be improved as compared with the conventional case.
- step S10 the initial three-dimensional shape of the micromaterial 102 before the strain is applied is measured.
- the three-dimensional shape is measured as described above.
- the width b of the parallel portion 104C of the minute material 102 is also measured. Note that this step may be performed as part of the position adjustment step of the micromaterial 102.
- a constant displacement for example, several hundred nm to several ⁇ m
- a strain is generated in the held minute material 102 and a tensile stress is measured. Then pause. It is desirable that the tensile speed at this time is 0.01 / sec or less in terms of strain rate.
- step S14 the three-dimensional shape of the measurement target region 108 of the minute material 102 is obtained (step S14).
- the three-dimensional shape is measured as described above.
- a predetermined displacement is again applied between the chuck portions 134 and 136 to apply a tensile stress to the micromaterial 102 (step S12). This is performed until the distance between the chuck portions 134 and 136 reaches a predetermined distance Ltl.
- the number of measurements n may be several tens of times.
- the reference point P is the largest value among the numerical values indicating the three-dimensional shape of the specific region by paying attention to the specific region (the region shown in FIGS. 6A and 6B) in the measurement target region 108. (The smallest value is acceptable).
- the areas closest to the two shoulder portions 104B of the measurement target area 108 are provided as the specific areas, respectively.
- the specific area coincides with the field of view of the first objective lens 166. For this reason, since the entire three-dimensional shape of the specific area obtained for each constant displacement between the chuck portions 134 and 136 can be grasped, even if the position or value of the gauge changes, regardless of the change. It is easy to track the position of the mark.
- the true strain ⁇ t and the stress ⁇ are calculated from the distance between the gauge points based on the formulas (1) and (2) (step S20).
- the strain increment is obtained from the distance Li between the gauge points at the measurement number i and the distance Li + 1 between the gauge points at the measurement time i + 1, and all the strain increments are summed to obtain the true strain ⁇ t (true
- the strain increment at the strain ⁇ t is obtained by substituting the distance Li in place of the distance L0 and the distance Li + 1 in place of the distance L1 in the equation (1).
- FIG. 7 an initial state without distortion in which the marks P1 and P2 are provided in the vicinity (specific area) of the two shoulders 104B of the minute area 102 (FIG.
- FIG. 7B shows a state (FIGS. 7B to 7G) in which the reference points P1 and P2 are changed after the strain is applied by a certain displacement.
- the minute material 102 is broken between the marks P1 and P2 (a broken area FA surrounded by a broken-line circle).
- the true strain ⁇ t up to FIG. Therefore, even if the position recognized as the reference point deviates from the measurement target region 108 with the final measurement count n, the true strain ⁇ t can be obtained from the strain increment before deviating. That is, the true strain ⁇ t can be obtained stably.
- the relationship between the obtained true strain ⁇ t and stress ⁇ is output by a monitor or the like.
- the measurement target is the thin film 106 of the minute material 102.
- the series of strain measurement is performed only on the support base 104 and the support base 104 on which the thin film 106 is formed. Then, from the two evaluation results, the relationship between the true strain ⁇ t and the stress ⁇ is obtained only for the thin film 106.
- the measurement unit 150 includes a white light source 156, a first objective lens 166, a CCD camera 170, and an image processing device.
- the first objective lens 166 is scanned relative to the minute material 102 in the optical axis direction (Z direction). That is, a scanning white interferometer is constituted by the above-described components. For this reason, since the field of view (the surface, not the point) of the first objective lens 166 is measured at once, the measurement time of the measurement target region 108 can be shortened compared to the conventional case.
- the three-dimensional shape of the measurement target region 108 is measured from the position of the first objective lens 166 where the contrast of the interference light is maximized by the image processing apparatus, the three-dimensional shape of the minute material 102 is quickly obtained with high resolution. be able to. Therefore, the deformation behavior of the measurement target region 108 of the micromaterial 102 at the micro level can be observed in situ. At this time, since the minute material 102 and the measuring unit 150 are not in contact with each other, the minute material 102 can be handled more easily than in the past. Further, the white interferometer can obtain a direct three-dimensional shape of the measurement target region 108 and is different from an interference pattern (spec pattern) by scattered light based on the surface shape (three-dimensional shape).
- the white interferometer image processing apparatus can directly set a predetermined position of the surface shape in the measurement target region 108 as a reference point without drawing the reference point on the minute material 102, and the position between the reference points can be set. It can be measured.
- the white interferometer measures the surface shape of the measurement target region 108 including the predetermined position. For this reason, when the strain is generated in the minute material 102 by the fine movement X stage 140 of the strain generating unit 130, the change can be continuously measured even if the position of the gage changes including the height. it can. In other words, since it is possible to follow and specify without losing sight of the set mark, it is possible to stably measure the distance between the changing marks.
- the position within the measurement target region can be appropriately set as the target.
- the tensile stress applied to the micromaterial 102 is measured by the load cell 146 of the strain generating unit 130, the strain with respect to the tensile stress can be accurately measured.
- JIS C5630-2, 3 established on March 20, 2009.
- Strain measurement conforming to the method can be performed.
- the strain ⁇ is the true strain ⁇ t obtained from the distance L0 between the two gauges in the initial state without the strain ⁇ and the distance L1 between the two gauges after adding the strain ⁇ . . Therefore, the strain ⁇ is not limited to a minute strain, and the strain ⁇ can be obtained with high accuracy even when the measurement target region 108 is greatly deformed.
- the focus position of the measurement unit 150 is the same as that of the first objective lens 166 in the optical axis direction (the positional relationship is constant), and the focus position of the measurement unit 150 forms an image of the measurement target region 108 in the CCD camera 170.
- a second objective lens 168 that is automatically adjusted from the state is provided. For this reason, the focal position of the first objective lens 166 to the measurement target region 108 can be very quickly performed. At the same time, it is possible to observe the state of the measurement target region 108 with the second objective lens 168. Furthermore, even if the tilting function of the minute material 102 with respect to the optical axis direction is not or insufficient, the automatic adjustment function of the focal position of the second objective lens 168 makes it possible to measure a three-dimensional shape with appropriate accuracy.
- the measuring unit 150 is provided with a laser processing unit that irradiates a laser capable of processing the minute material 102. For this reason, when holding the minute material 102 on the chuck portions 134 and 136, the minute material 102 is left in the middle of processing, and after holding the minute material 102, the minute material 102 can be processed into a final shape to be measured. . That is, when holding the minute material 102, the reinforcing portion 104D is provided to effectively prevent the concentration of mechanical stress on the measurement target region 108, and the reinforcing portion 104D can be cut after the holding. For this reason, it is possible to effectively prevent the minute material 102 from being destroyed during the holding.
- the minute material 102 is processed in a non-contact state using a laser, the influence on the measurement target region 108 at the time of the processing can be minimized. As a result, it is possible to prevent the fine material 102 from being damaged at the stage of holding the fine material 102.
- the position of one chuck portion 134 (136) can be relatively adjusted in the three axial directions orthogonal to each other with respect to the other 136 (134). For this reason, when the minute material 102 is held, the positions of the chuck portions 134 and 136 can be adjusted in three axial directions. That is, since the stress applied to the micromaterial 102 during holding can be reduced as much as possible, the relationship between the strain and the stress can be measured more accurately, and breakage during holding of the micromaterial 102 can be avoided. You can also.
- the strain generator 130 can be moved in a plane orthogonal to the optical axis direction and can be inclined with respect to the optical axis direction. For this reason, the measurement target region 108 of the minute material 102 held by the strain generation unit 130 can be quickly adjusted on the optical axis of the first objective lens 166. At the same time, the inclination of the measurement target region 108 of the minute material 102 can be reduced in advance (horizontal state). For this reason, the number of scans of the first objective lens 166 in the optical axis direction can be reduced. For this reason, the three-dimensional shape of the measurement target region 108 can be measured at a higher speed.
- the combination of the Y stage 116 and the X stage 118 and the focal position of the second objective lens 168 are used.
- a three-dimensional shape measurement is performed after applying a certain displacement between the chucks 134 and 136 to apply a tensile stress to the fine material 102 and temporarily stop. For this reason, since the distance between the gauge points can be obtained reliably for each fixed displacement, the relationship between the true strain and the stress can be determined in detail by finely setting the fixed displacement amount.
- the strain against the tensile stress can be accurately measured while being in non-contact with the minute material 102.
- the tensile stress has been described, but the present invention is not limited to the tensile stress. By changing the direction of the stress, it can be similarly applied to strains caused by compressive stress and shear stress based on the same technical idea.
- the measurement target is the single thin film 106 and the evaluation is performed together with the support base 104.
- the thin film may be independent only in the measurement target region. In this case, it is possible to measure a more accurate strain.
- the thin film may be a thin film having a multilayer structure. In that case, by obtaining a two-dimensional strain distribution, for example, it is possible to obtain a strain distribution in the vicinity of a specific structure (such as a layered structure or a structure containing precipitates) due to the multilayer structure. Become. In other words, since a distribution is required for a thin film having a multilayer structure, a new process proposal / improvement and yield improvement in application of the multilayer structure to MEMS can be achieved.
- the true strain ⁇ t is obtained by obtaining the distance between the gauge points for each measurement count of the three-dimensional shape, but the present invention is not limited to this.
- the strain ⁇ is the true strain ⁇ t obtained by the equation (1), but the present invention is not limited to this and may be a nominal strain ⁇ f.
- the nominal strain ⁇ f can be obtained as shown in the following equation (3), where L0 is the distance between the gauges in the initial state without distortion, and L1 is the distance between the gauges after the distortion is applied. it can.
- the nominal strain ⁇ f can be obtained at a high speed with a small amount of calculation, and the relationship between the stress and the strain can be obtained accurately in the region of a minute strain.
- ⁇ f (L1 ⁇ L0) / L0 (3)
- the two reference points are in the X direction in the measurement target region 108 and sandwich the minimum height in the Z direction.
- the position of the maximum height in the two Z directions is used as the benchmark, but the present invention is not limited to this.
- a characteristic place may be specified from the frequency characteristics of the undulation of the surface shape and determined as the mark point.
- the reference point may be determined by determining three or more positions in the measurement target region as reference points and measuring the distance between the reference points. In this case, the strain can be obtained as a distribution in the measurement target region. For this reason, since the strain distribution in the measurement target region can be evaluated in relation to the surface shape, more detailed mechanical properties of the micromaterial can be grasped.
- the first objective lens 166 and its own focal position coincide with each other in the optical axis direction, and the own focal position is in the imaging state of the measurement target region 108 in the CCD camera 170.
- the present invention is not limited to this.
- the focal positions of the first objective lens and the second objective lens are different in the optical axis direction, if the positional relationship is constant, the focal position of the first objective lens can be quickly adjusted to the minute member. it can.
- the second objective lens may not be provided. In that case, the number of parts can be reduced, and the cost of the apparatus can be further reduced.
- the measurement unit 150 is further provided with a laser processing unit that irradiates a laser capable of processing the minute material 102, but the present invention is not limited to this. You may hold
- processing of a minute material electric discharge processing, chemical processing, focused ion beam processing, electron beam processing, or the like may be used.
- the strain generating unit 130 includes two chuck units 134 and 136 for holding the minute material 102, and one chuck unit 134 (136) is mutually connected to the other 136 (134). It was possible to relatively adjust the position in three orthogonal directions.
- the holding members 134 and 136 are used to hold the minute material 102, but the present invention is not limited to this. For example, it may be simply fixed with an adhesive or the like without using the stopper member. In that case, the holding state of the minute material can be adjusted by adjusting the position of the chuck portion according to the curing characteristics of the adhesive. Alternatively, the chuck portion may not be relatively adjustable in the three axis directions. In that case, the number of parts can be reduced and cost reduction of the apparatus can be promoted.
- the strain generator 130 is further movable in a plane orthogonal to the optical axis direction and can be tilted with respect to the optical axis direction. It is not limited to.
- the strain generator may only be movable within a plane orthogonal to the optical axis direction. In this case, adjustment of the inclination of the minute material can be made unnecessary. For this reason, the man-hours for adjusting the fine material can be reduced and the number of parts can be reduced, so that the cost of the apparatus can be further reduced.
- the strain generating unit may only be tiltable with respect to the optical axis direction.
- the strain generation unit may not be movable within a plane orthogonal to the optical axis direction and may not be tiltable with respect to the optical axis direction. In that case, since the number of parts can be further reduced, the cost of the apparatus can be further reduced.
- a certain displacement is applied between the chucks 134 and 136 to apply a tensile stress to the micromaterial 102 and temporarily stop to measure the three-dimensional shape.
- the present invention is limited to this.
- tensile stress or compressive stress may be continuously applied to the micromaterial by deforming the micromaterial at a constant speed.
- the constant rate is a predetermined strain rate (for example, 0.01 / second or less)
- the thermal equilibrium state caused by the deformation of the minute material can be kept constant. For this reason, measurement with higher accuracy can be realized.
- the predetermined strain rate of the constant rate If so, it becomes possible to determine the tensile stress or the compressive stress more accurately.
- the present invention can be used for the evaluation of mechanical properties of thin film materials in the sub-micron to micron range for the development and manufacture of MEMS devices, the development and manufacture of MEMS materials including metals and ceramics, and polymers.
- DESCRIPTION OF SYMBOLS 100 Micromaterial distortion measuring device 102 ... Micromaterial 104 ... Support base 104A ... Grasp part 104B ... Shoulder part 104C ... Parallel part 104D ... Reinforcement part 106 ... Thin film 108 ... Measurement object area 110, 132 ... Base plate 112 ... Bracket 114 ... Position Adjusting part 116, 138 ... Y stage 118, 142 ... X stage 120 .... theta. Stage 122 .... beta. Stage 124 .... alpha. Stage 130 ... Strain generating part 134, 136 ... Chuck part 140 ... fine movement X stage 144, 152 ... Z stage 146 ... Load cell 150 ...
- Measurement unit 154 Tube 156 ... White light source 158 ... Reflection mirror 160, 166C ... Half mirror 162 ... Slider 164 ... Fine motion Z stage 166 ... First objective lens 166A ... Holder 166B ... Lens 166D ... Reference mirror 16 ... The second objective lens 170 ... CCD camera
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Abstract
Description
εt=ln(L1/L0) (1)
σ=Ld/S (2)
εf=(L1-L0)/L0 (3)
102…微小材料
104…支持ベース
104A…つかみ部
104B…肩部
104C…平行部
104D…補強部
106…薄膜
108…計測対象領域
110、132…ベースプレート
112…ブラケット
114…位置調整部
116、138…Yステージ
118、142…Xステージ
120…θステージ
122…βステージ
124…αステージ
130…ひずみ発生部
134、136…チャック部
140…微動Xステージ
144、152…Zステージ
146…ロードセル
150…計測部
154…鏡筒
156…白色光源
158…反射ミラー
160、166C…ハーフミラー
162…スライダ
164…微動Zステージ
166…第1対物レンズ
166A…ホルダ
166B…レンズ
166D…参照鏡
168…第2対物レンズ
170…CCDカメラ
Claims (9)
- 微小材料に引張応力または圧縮応力を加えて該微小材料にひずみを発生させるとともに該引張応力または圧縮応力を計測するひずみ発生部と、該ひずみによる該微小材料の変形を計測する計測部と、を有する微小材料ひずみ計測装置であって、
前記計測部に、前記微小材料の計測対象領域を照射する白色光源と、該白色光源で照射された該計測対象領域からの光である測定光と該白色光源から分岐された光で照射された参照鏡からの光である参照光とによって形成される干渉光を検出する2次元光電センサと、該干渉光を該2次元光電センサに受光させるとともに前記参照鏡を備える第1対物レンズと、該第1対物レンズの光軸方向における相対的な走査で前記干渉光のコントラストが最大となる該第1対物レンズの位置から前記計測対象領域の3次元形状を測定するとともに、該3次元形状に基づいて該計測対象領域における変位を計測する上で基準となる位置である標点を複数定め且つ該複数の標点間の距離を計測する画像処理装置と、を備え、且つ、
前記ひずみ発生部に、前記微小部材を保持するための2つのチャック部と、該2つのチャック部の一方を支持し前記引張応力または圧縮応力を計測する応力検出手段と、該2つのチャック部の距離を変化させることで前記ひずみを発生させる移動機構と、を備え、
該移動機構により前記ひずみを前記微小材料に発生させた際には、前記応力検出手段によって計測された前記引張応力または圧縮応力と、前記第1対物レンズが前記光軸方向で相対的に走査されることで、前記ひずみで変化した前記複数の標点が見失われることなく追従して特定されて計測された該複数の標点間の距離とに基づいて、前記引張応力また圧縮応力に対する前記ひずみが計測される
ことを特徴とする微小材料ひずみ計測装置。 - 請求項1において、
前記ひずみは、該ひずみのない状態の前記複数の標点間の距離と、該ひずみを付加したのちの該複数の標点間の距離と、から求められる真ひずみとされる
ことを特徴とする微小材料ひずみ計測装置。 - 請求項1または2において、
前記複数の標点は、3以上とされている
ことを特徴とする微小材料ひずみ計測装置。 - 請求項1乃至3のいずれかにおいて、更に、
前記計測部に、前記光軸方向で前記第1対物レンズとの位置関係が一定とされるとともに自身の焦点位置が前記2次元光電センサにおける前記計測対象領域の結像状態から自動調整される第2対物レンズを備える
ことを特徴とする微小材料ひずみ計測装置。 - 請求項1乃至4のいずれかにおいて、更に、
前記計測部に前記微小材料を成形加工可能なレーザを照射するレーザ加工部を備える
ことを特徴とする微小材料ひずみ計測装置。 - 請求項1乃至5のいずれかにおいて、
前記2つのチャック部のうち、一方の該チャック部が他方に対して互いに直交する3軸方向で相対的に位置調整可能とされている
ことを特徴とする微小材料ひずみ計測装置。 - 請求項1乃至6のいずれかにおいて、更に、
前記ひずみ発生部は、前記光軸方向に直交する面内で移動可能とされ、且つ、該光軸方向に対して傾斜可能とされている
ことを特徴とする微小ひずみ計測装置。 - 微小材料に引張応力または圧縮応力を加えて該微小材料にひずみを発生させるとともに該引張応力または圧縮応力を計測し、該ひずみによる該微小材料の変形を計測することでひずみを求める微小材料ひずみ計測方法であって、
前記微小材料を保持する工程と、
保持された該微小材料に前記ひずみを発生させるとともに前記引張応力または圧縮応力を計測する工程と、
該ひずみが付与された微小材料の計測対象領域に白色光源で光を照射する工程と、
該計測対象領域からの光である測定光と該白色光源から分岐された光で照射された参照鏡からの光である参照光とによって形成される干渉光を、該参照鏡を備える第1対物レンズで2次元光電センサに受光させる工程と、
前記第1対物レンズをその光軸方向で相対的に走査し前記干渉光のコントラストが最大となる該第1対物レンズの位置から前記計測対象領域の3次元形状を測定する工程と、
測定された該3次元形状に基づいて、前記ひずみで変化した該計測対象領域における変位を計測する上で基準となる位置である複数の標点を見失うことなく追従して特定し、該複数の標点間の距離を計測する工程と、
得られた該複数の標点間の距離及び前記引張応力または圧縮応力に基づいて、該引張応力または圧縮応力に対する前記ひずみが計測される工程と、
を含むことを特徴とする微小材料ひずみ計測方法。 - 請求項8において、
一定速度で前記微小材料を変形させることで前記引張応力または圧縮応力を連続的に該微小材料に加える工程を含む
ことを特徴とする微小材料ひずみ計測方法。
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