WO2011096125A1 - 表示装置 - Google Patents
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- WO2011096125A1 WO2011096125A1 PCT/JP2010/071162 JP2010071162W WO2011096125A1 WO 2011096125 A1 WO2011096125 A1 WO 2011096125A1 JP 2010071162 W JP2010071162 W JP 2010071162W WO 2011096125 A1 WO2011096125 A1 WO 2011096125A1
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- tft element
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- display device
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- 238000009826 distribution Methods 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims description 44
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0413—Details of dummy pixels or dummy lines in flat panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0297—Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
Definitions
- the present invention relates to a display device including a drive circuit using a TFT that is monolithically formed on a display panel and has a channel width larger than that of a conventional TFT.
- p-Si Polysilicon
- CG-Si Continuous Grain Silicon: continuous grain boundary crystalline silicon
- ⁇ c-Si microcrystalline silicon
- the mobility is lower than that of the semiconductor film made of p-Si, CG silicon, and microcrystalline silicon, but the crystallization process can be omitted and it is cheaper.
- the pixel TFT and the driving TFT provided in the scanning line driving circuit are formed monolithically using an a-Si (Amorphous Silicon) semiconductor film that can be formed in a so-called a-Si.
- a GDM (gate driver monolithic) scanning line driving circuit using a semiconductor film has been proposed.
- the data signal line driving circuit includes a plurality of data signal line driving circuits 116a, 116b, and 116c as shown in FIG. It is often composed of.
- FIG. 18 shows a configuration of a conventional liquid crystal display device 141 including a plurality of data signal line drive circuits 116a, 116b, and 116c.
- the liquid crystal display device 141 includes a display panel 112, a flexible printed circuit board 113, and a control board 114.
- the display panel 112 provided in the liquid crystal display device 141 is provided with a pixel TFT 121 and a scanning signal line driving circuit 115 formed for each pixel in the display region 112a using a-Si formed on a glass substrate.
- the drive TFT is built in.
- the display area 112a is an area in which a plurality of pixels PIX are arranged in a matrix, and each pixel PIX includes a pixel TFT 121, a liquid crystal capacitor CL, and an auxiliary capacitor Cs.
- the gate electrode of the pixel TFT 121 is connected to the scanning line GL, and the source electrode of the pixel TFT 121 is connected to the data signal line SL. Further, the liquid crystal capacitor CL and the auxiliary capacitor Cs are connected to the drain electrode of the pixel TFT 121.
- the plurality of scanning lines are composed of scanning lines GL1, GL2, GL3... GLn, and are connected to the output of the scanning signal line driving circuit 115, respectively, while the plurality of data signal lines are data signal lines SL1, SL2, and SL3. ... Consisting of SLm and connected to the outputs of a plurality of data signal line drive circuits 116a, 116b and 116c, respectively.
- an auxiliary capacitance wiring for applying an auxiliary capacitance voltage to one electrode of the auxiliary capacitance Cs provided for each pixel PIX is formed.
- the scanning signal line driving circuit 115 is provided in a region adjacent to one side in the extending direction of the scanning lines GL1, GL2, GL3... GLn in the display region 112a of the display panel 112.
- the scanning pulses are sequentially supplied to the scanning lines GL1, GL2, GL3... GLn.
- the scanning signal line driver circuit 115 can be formed monolithically with the display region 112a in the display panel 112 using a p-Si film, a CG-Si film, a microcrystalline Si film, or an a-Si film.
- the flexible printed circuit board 113 includes a plurality of data signal line drive circuits 116a, 116b, and 116c.
- the data signal line drive circuits 116a, 116b, 116c supply data signals to the data signal lines SL1, SL2, SL3,.
- the control board 114 is connected to the flexible printed board 113, and supplies necessary signals and power to the scanning signal line driving circuit 115 and the data signal line driving circuits 116a, 116b, and 116c. That is, the signal and power output from the control board 114 and supplied to the scanning signal line driving circuit 115 are supplied to the scanning signal line driving circuit 115 of the display panel 112 via the flexible printed board 113.
- the data signal line driving circuit is composed of a plurality of data signal line driving circuits 116a, 116b, and 116c, an increase in manufacturing cost and an increase in mounting area are caused. There is a problem of end.
- liquid crystal display device that performs SSD (Source Shared Driving) driving that reduces the number of outputs of the data signal line driving circuit and drives each of the RGB data signal lines in a time-sharing manner.
- SSD Source Shared Driving
- FIG. 19 shows an example of an SSD liquid crystal display device 151.
- the liquid crystal display device 151 includes a display panel 112 and a flexible printed circuit board 113.
- the display panel 112 includes a pixel PIX, a scanning signal line drive circuit (gate driver) 153, and an SSD circuit 155.
- a chip-shaped data signal line driving circuit (source driver) 152 is mounted on the flexible printed circuit board 113.
- a data signal line RSL to which the R (red) pixel PIX is connected, a data signal line GSL to which the G (green) pixel PIX is connected, and a data signal line BSL to which the B (blue) pixel PIX is connected. Are grouped, and each group is arranged adjacent to each other.
- the n ⁇ 1th set of data signal lines SLn ⁇ 1 (RSLn ⁇ 1, GSLn ⁇ 1, BSLn ⁇ 1)
- the nth set of data signal lines SLn (RSLn, GSLn, BSLn)
- the (n + 1) th set is shown.
- a set of data signal lines SLn + 1 (RSLn + 1, GSLn + 1, BSLn + 1) is shown.
- the SSD circuit 155 includes a transistor (TFT) ASWR (ASWRn ⁇ 1, ASWRn, ASWRn + 1 in FIG. 19) connected to one end of each data signal line RSL on the data signal supply side, and a data signal supply of each data signal line GSL.
- TFT transistor
- ASWR ASWRn ⁇ 1, ASWRn, ASWRn + 1 in FIG. 19
- SWGW transistor
- ASWB ASWBn-1 in FIG. 19
- the transistors ASWRn, ASWGn, and ASWBn whose one ends are connected to the same set of data signal lines RSLn, GSLn, and BSLn are connected to each other on the other end side to drive the data signal lines. It is connected to the output DATA of the circuit 152 (DATAn in FIG. 19).
- the number of output DATA lines in the data signal line driving circuit 152 is set to the data signal line driving circuit 116a composed of a plurality of chips provided in the liquid crystal display device 141 shown in FIG. Since the total number of output DATA lines in 116b and 116c can be reduced to one third, and the number of data signal line driving circuits can be reduced to one third, the manufacturing unit price can be increased and the mounting area can be increased. Can be suppressed.
- the transistors ASWR, ASWG, and ASWB are sequentially turned on in a time-division manner by approximately one third of one horizontal period by the ON signals Ron, Gon, and Bon input to the gate electrodes.
- the ON signal Ron is High
- the transistor ASWR is turned on, and the R output DATA output from the data signal line driving circuit 152 at that time is supplied to the data signal line RSL.
- the ON signal Gon is High
- the transistor ASWG is turned on, and the G output DATA output from the data signal line driving circuit 152 at that time is supplied to the data signal line GSL.
- the ON signal Bon is High
- the transistor ASWB is turned on, and the B output DATA output from the data signal line driving circuit 152 at that time is supplied to the data signal line BSL.
- each transistor ASWR / ASWG / ASWB is connected to each data signal line RSL / GSL / BSL, and the other is connected to the data signal line drive circuit 152. Is connected to the output DATA.
- the scanning signal line driver circuit 153 and the SSD circuit 155 include a p-Si film, a CG-Si film, a microcrystalline Si film, an oxide semiconductor film, and an a-Si film for the display panel 112.
- the pixel TFT 121 in the display area 112 can be formed monolithically.
- a p-Si film, a CG-Si film, a microcrystalline Si film, an oxide semiconductor film, or an a-Si film is used to form a monolithic structure with the pixel TFT formed in the display region of the liquid crystal display device. If the driving TFT in the scanning line driving circuit, data signal line driving circuit, or SSD circuit does not satisfy the predetermined mobility required for driving the circuit, the driving TFT is formed using an a-Si film. In such a case, it is necessary to use a TFT having a larger channel width than the conventional TFT as the driving TFT.
- FIG. 20 is a diagram showing an example of a TFT having a large channel width.
- FIG. 20A is a diagram showing a partial region of a TFT having a large channel width provided with continuous U-shaped (comb-tooth) electrodes.
- the 20A shows a partial region 200 repeated in the TFT.
- the partial region 200 includes a gate electrode line 210, a source electrode line 230, and a drain electrode line 240.
- the U-shaped portion of the source electrode line 230 surrounds the character-shaped portion, and a channel is formed between the two.
- the TFT has a configuration including a number of partial regions 200 shown in FIG. 20A connected in parallel.
- the channel width in the partial region 200 of the TFT can be represented by a distance W including 2 ⁇ DL 1 + DL 2, and the channel length is equal to that of the source electrode line 230. It can be represented by a distance L between the boundary line with the channel region and the boundary line between the drain electrode line 240 and the channel region.
- the TFT has a configuration including a large number of partial regions 200 shown in FIG. 20A connected in parallel, a TFT having a very large channel width can be realized.
- the U-shaped portion of the source electrode line 230 and the I-shaped portion of the drain electrode line 240 are short-circuited due to a process failure or the like, the upper portion of the I-shaped portion of the drain electrode line 240 is laser-cut. Therefore, the entire TFT can be used normally.
- the TFT having the structure shown in FIG. 20A has a small distance from the main body of the drain electrode line 240 to the region above the gate electrode line 210, the I-shaped portion of the drain electrode line 240 is laser-induced.
- the range of the laser spot extends to the stacked body of the semiconductor layer and the n + layer provided in the region above the gate electrode line 210.
- the laminated body When the laminated body is damaged by laser irradiation, the laminated body is connected to the entire TFT, so that the heat of damage is further transferred to the adjacent region. As a result, the laminated body damaged by the laser irradiation is adjacent to the laminated body. The wide area including the part will be damaged.
- the TFT 300 includes a gate electrode 302, a first source / drain electrode 303, and a second source / drain electrode 304.
- a gate electrode 302 When one of the first source / drain electrode 303 and the second source / drain electrode 304 is used as a source electrode, the other is used as a drain electrode.
- the gate electrode 302 is formed in a U-shape, and is formed on the glass substrate on the lower layer side than the first source / drain electrode 303 and the second source / drain electrode 304.
- a stacked body of a semiconductor layer and an n + layer is provided with a gate insulating film therebetween, and a region where the semiconductor layer is provided is a first region R indicated by hatching.
- the region of the stacked body is in the first region R, and the first source / drain electrode 303 is provided on the n + layer in the first region R.
- the region 305 other than the first source / drain electrode 303 is a region of a semiconductor layer in which no n + layer is provided above.
- the second source / drain electrode 304 includes one electrode line 304a and a plurality of branch electrodes 304b.
- the electrode line 304 a is a line electrode provided in the central gap region of the U-shaped region of the gate electrode 302, and the branch electrodes 304 b... Are directed from the electrode line 304 a to the first source / drain electrodes 303 on both sides. It is an electrode group which branches and extends. Each branch electrode 304b extends to the n + layer in the first region R, and the first source / drain electrode 303 is disposed so as to surround each branch electrode 304b by a predetermined distance.
- the first source / drain electrode 303 has a pattern of a semiconductor layer formed so that there is no n + layer in the stacked body between the branch electrode 304b in the first region R and the panel surface.
- the semiconductor layer pattern is a channel forming region 305 a of the TFT 300.
- the outer edge of the first region R is the inner side of the U-shape of the gate electrode 302
- a region 306 is provided in which the stacked body of the semiconductor layer and the n + layer protrudes from the boundary line e to the line f.
- the outer edge of the first region R recedes to a line g that is located farther from the electrode line 304a than the boundary line e.
- the distance d1 from the location D to the electrode line 304a is set to be 5 ⁇ m or more.
- the first source / drain electrode 303 and the branch electrode 304b of the second source / drain electrode 304 leak with each other.
- a laser spot can be easily applied to the point Q on the branch electrode 304b so as to be away from the location D and the electrode line 304a.
- the present invention has been made in view of the above problems, and even when a leak portion (defect portion) occurs in a TFT provided in a drive circuit, it takes time to repair the leak portion (defect portion).
- An object of the present invention is to provide a display device including a driving circuit that does not have TFTs with different channel widths even after repair, while improving productivity.
- a display device of the present invention includes a display region in which each pixel arranged in a matrix and a pixel TFT element provided for each pixel are provided, and the pixel TFT element And a peripheral region of the display region provided with a drive circuit having a plurality of drive TFT elements monolithically formed, wherein the drive TFT element includes a semiconductor layer, a gate electrode, and a source An electrode and a drain electrode, and the gate electrode is provided on one surface of the semiconductor layer, and the source electrode and the drain electrode are provided on the other surface opposite to the one surface of the semiconductor layer, respectively.
- One of the source electrode and the drain electrode is formed so as to surround a part of the other electrode, and the one electrode is connected to the other electrode.
- the one electrode and the other electrode are separated from each other by a certain distance, and the drive circuit has the same channel width as that of the drive TFT element.
- the formed redundant TFT element, the first redundant wiring, the second redundant wiring, and the third redundant wiring are provided, and the first redundant wiring includes the first redundant wiring and the plurality of driving circuits.
- the second redundant wiring is electrically connected.
- the second redundant wiring is formed so that the second signal is input thereto, and the third redundant wiring is electrically connected to the drain electrode of the redundant TFT element. Is electrically connected to any one of the plurality of wirings provided to output the different second signals from the drain electrodes of the plurality of driving TFT elements.
- the second signal output from the drain electrode is formed so as to be output from a wiring electrically connected to the third redundant wiring.
- one of the source electrode and the drain electrode in the drive TFT element and the redundant TFT element is formed so as to surround a part of the other electrode, and the one electrode
- the one electrode and the other electrode are separated by a certain distance, so-called U-shaped electrode or comb-like shape
- a driving TFT element having a large channel width provided with the above electrode is used.
- the driving TFT element is configured to perform repair using a redundant TFT element, a first redundant wiring, a second redundant wiring, and a third redundant wiring provided separately. It has become.
- the channel width of the driving TFT element is large as in the prior art, it takes time to find a leak portion (defect portion) and cut with a laser spot, resulting in a decrease in productivity. The problem does not arise.
- the leak portion (defect portion) in the driving TFT element having a large channel width is cut by a laser spot, so that the driving TFT element and the laser having a portion cut by the laser spot are cut. Since the channel width is different from that of a driving TFT element that does not have a spot-cut portion, display quality is deteriorated in a display device including a driving circuit using these driving TFT elements. There was a problem.
- the redundant TFT element and the first redundant wiring formed so as to have the same channel width as the drive TFT element without using the drive TFT element in which the leak portion (defect portion) has occurred. Since the repair is performed using the second redundant wiring and the third redundant wiring, it is possible to realize a display device capable of suppressing the deterioration of the display quality.
- the drive TFT element includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and the gate electrode is formed on one surface of the semiconductor layer.
- the source electrode and the drain electrode are provided on the other surface opposite to one surface of the semiconductor layer, respectively, and either the source electrode or the drain electrode surrounds a part of the other electrode.
- the one electrode and the other electrode are separated by a certain distance,
- the drive circuit includes a redundant TFT element formed to have the same channel width as the drive TFT element, a first redundant line, a second redundant line, and a third redundant line.
- the first redundant wiring includes the first redundant wiring and any one of the plurality of wirings provided for inputting different first signals to the gate electrodes of the plurality of driving TFT elements. By being electrically connected, the first signal in the wiring electrically connected to the first redundant wiring is input to the gate electrode of the redundant TFT element.
- the second redundant wiring electrically connects the second redundant wiring and any one of the plurality of wirings provided for inputting different second signals to the source electrodes of the plurality of driving TFT elements. To the source electrode of the redundant TFT element so that the second signal in the wiring electrically connected to the second redundant wiring is input to the third TFT, Redundant wiring is the redundant TFT element.
- the second signal output from the drain electrode of the redundant TFT element is output from a wiring electrically connected to the third redundant wiring. It is the structure currently formed.
- a display device including a driver circuit that does not have TFTs having different channel widths can be realized later.
- FIG. 4 is a diagram for explaining a case where the signal distribution circuit shown in FIG. 3 is repaired using a redundant TFT element, a first redundant wiring, a second redundant wiring, and a third redundant wiring.
- FIG. 5 is a diagram showing the flow of output DATA output from the output terminal of the data signal line drive circuit when repaired as shown in FIG. 4.
- FIG. 7 is a diagram for explaining a case where a disconnection in the signal distribution circuit shown in FIG. 6 is repaired using a fourth redundant wiring. It is a figure which shows the flow of the control signal supplied via the control signal line SEL G at the time of repairing as shown in FIG. It is a figure which shows the layout of the signal distribution circuit with which the liquid crystal display device of one embodiment of this invention was equipped. It is a figure which shows the layout of the other signal distribution circuit which can be provided in the liquid crystal display device of one embodiment of this invention.
- FIG. 13 is a diagram for explaining a case where the signal distribution circuit shown in FIG. 12 is repaired using a redundant TFT element, a first redundant wiring, a second redundant wiring, and a third redundant wiring. It is a figure which shows the flow of the output DATA output from the output terminal of the data signal line drive circuit at the time of repairing as shown in FIG.
- FIG. 16 is a diagram for describing a case where a disconnection in the signal distribution circuit illustrated in FIG. 15 is repaired using a fourth redundant wiring. It is a figure which shows the flow of the control signal supplied via the control signal line SEL G at the time of repairing as shown in FIG. 1 shows a configuration of a conventional liquid crystal display device including a plurality of data signal line driving circuits. 1 shows an example of an SSD liquid crystal display device. It is a figure which shows an example of TFT with a large channel width.
- a signal distribution circuit (SSD circuit) using a driving channel element having a large channel width as a display device having a driving circuit using a driving TFT element having a large channel width according to the present invention
- the driving circuit is not limited to the signal distribution circuit, and any driving TFT element having a large channel width can be used. It may be a scanning signal line driving circuit, a data signal line driving circuit, or the like.
- the liquid crystal display device is exemplified as a display device.
- the present invention is not limited to this, and an EL display device or the like may be used.
- FIG. 2 is a diagram showing a schematic configuration of the liquid crystal display device 1 of the present embodiment.
- the liquid crystal display device 1 is mounted on a liquid crystal display panel 2 having a display region R1, a signal distribution circuit 3, and a scanning signal line drive circuit 4, and a flexible printed circuit board 5. And a data signal line driving circuit 6.
- the display region R1 includes pixels arranged in a matrix, pixel TFT elements provided for the pixels, and scanning signal lines connected to the gate electrodes of the pixel TFT elements. And a data signal line connected to the source electrode of each pixel TFT element.
- the signal distribution circuit 3 and the scanning signal line drive circuit 4 are formed monolithically with the pixel TFT element in the peripheral region of the display region R1.
- the driving TFT elements provided in the signal distribution circuit 3 and the scanning signal line driving circuit 4 and the semiconductor layers in the pixel TFT elements are provided.
- the semiconductor layer is formed using amorphous silicon, but is not limited thereto.
- an oxide layer, a microcrystalline silicon layer, or a layer in which microcrystalline silicon and amorphous silicon are stacked is used as the semiconductor layer.
- a polycrystalline silicon layer, a continuous grain boundary crystalline silicon layer, or the like can also be used.
- amorphous germanium, polycrystalline germanium, amorphous silicon / germanium, polycrystalline silicon / germanium, amorphous silicon / carbide, polycrystalline silicon / carbide, or the like can also be used.
- the oxide layer can be formed of an amorphous oxide containing at least one element selected from In, Ga, and Zn, but is not limited thereto.
- the data signal line driver circuit 6 is provided on the flexible printed circuit board 5 in a separate process.
- the data signal line driving circuit 6 can also be formed monolithically with the pixel TFT element.
- the signal distribution circuit 3 provided in the liquid crystal display device 1 includes a redundant TFT element, a first redundant wiring, a second redundant wiring, a third redundant wiring, and a fourth redundant wiring. Other than this, the configuration is the same as the SSD circuit 155 provided in the conventional liquid crystal display device 151 shown in FIG.
- FIG. 1 is a diagram schematically showing a part of a signal distribution circuit 3 provided in the liquid crystal display device 1 of the present embodiment.
- the data signal line SRn to which the R (red) pixel PIX is connected, the data signal line SGn to which the G (green) pixel PIX is connected, and the B (blue) pixel PIX are connected.
- the data signal line SBn thus formed is a set, and the sets are arranged adjacent to each other.
- FIG. 1 shows an n-th set of data signal lines SRn, SGn, and SBn and an (n + 1) -th set of data signal lines SRn + 1, SGn + 1, and SBn + 1.
- a drive TFT element 7 is provided at one end on the data signal supply side of each data signal line SRn, SGn, SBn.
- the semiconductor layer of the driving TFT element 7 is formed of amorphous silicon and has low mobility, a source electrode or a drain electrode in the driving TFT element 7 is formed in order to obtain a TFT having a large channel width as shown in FIG.
- Any one of the electrodes is formed so as to surround a part of the other electrode, and in the region where the one electrode is formed so as to surround a part of the other electrode, the one electrode
- the other electrode and the other electrode are provided with a so-called U-shaped electrode or a comb-shaped electrode separated by a certain distance.
- the same set of data signal lines SRn, SGn, and SBn are connected to each other on one end side of the drive TFT element 7 and connected to the output terminal SINn of the data signal line drive circuit 6.
- the other data signals SRn + 1, SGn + 1, and SBn + 1 of the same set are connected to the other output terminal SINn + 1 of the data signal line driving circuit 6.
- the control signal (first signal) input to the gate electrode of the driving TFT element 7 is the first control signal line SEL R, the second control signal line SEL G, and the third control signal line SEL B.
- the driving TFT elements 7 connected to the same set of data signal lines SRn, SGn, and SBn are sequentially turned on in a time-division manner by about one third of one horizontal period. Become.
- the driving TFT elements 7 connected to the data signal lines SRn, SRn + 1,... R output DATA (second signal / image signal) output from the six output terminals SINn / SINn + 1... Is supplied to the data signal lines SRn / SRn + 1.
- the driving TFT elements 7 connected to the data signal lines SBn, SBn + 1,...
- the B output DATA output from the output terminals SINn, SINn + 1... Of the drive circuit 6 is supplied to the data signal lines SBn, SBn + 1.
- the drain electrode of the drive TFT element 7 is connected to each data signal line SRn, SGn, SBn..., And the source electrode of the drive TFT element 7 is the data signal line drive circuit 6. Are connected to the output terminals SINn, SINn + 1.
- the signal distribution circuit 3 includes a redundant TFT element 8 formed so as to have the same channel width as that of the driving TFT element 7, first redundant wirings 9 a and 9 b, and second redundant wiring 10.
- a third redundant wiring 11 and fourth redundant wirings 12a and 12b are provided.
- FIG. 3 is a diagram showing an example when a leak (defect) occurs in a certain driving TFT element 7 in the signal distribution circuit 3 provided in the liquid crystal display device 1 of the present embodiment.
- FIG. 3 shows an example in which a leak (defect) occurs in the driving TFT element 7 connected to the data signal line SGn.
- FIG. 4 illustrates a case where the signal distribution circuit 3 shown in FIG. 3 is repaired by using the redundant TFT element 8, the first redundant wirings 9a and 9b, the second redundant wiring 10, and the third redundant wiring 11.
- FIG. 4 illustrates a case where the signal distribution circuit 3 shown in FIG. 3 is repaired by using the redundant TFT element 8, the first redundant wirings 9a and 9b, the second redundant wiring 10, and the third redundant wiring 11.
- a circled portion indicates a portion that is electrically connected using a laser
- an X portion indicates a portion that is electrically disconnected using a laser
- a V portion is a load (resistance / capacitance) in the vicinity.
- a portion to be electrically cut using a laser as appropriate is shown.
- both ends of the driving TFT element 7 connected to the data signal line SGn are electrically connected.
- the driving TFT element 7 is electrically separated from the data signal line SGn.
- the first redundant wiring 9a is formed so as to cross the control signal lines SEL R, SEL, G, SEL B electrically connected to the gate electrode of each driving TFT element 7, and the control signal lines SEL R, SEL are formed.
- a first redundant wiring 9b is formed in parallel with G ⁇ SEL B.
- the location where the first redundant wiring 9a and the second control signal line SEL G intersect is electrically connected to the location where the first redundant wiring 9a and 9b intersect, and the second control signal A control signal supplied via the line SEL G can be supplied to the gate electrode of the redundant TFT element 8.
- the second redundant wiring 10 is connected to any one of the output terminals SINn, SINn + 1... Of the data signal line driving circuit 6.
- one redundant TFT element 8 is provided for the output terminals SINn and SINn + 1 of the data signal line driving circuit 6 (that is, the redundant TFT element is provided for two output terminals of the data signal line driving circuit 6). 8), the second redundant wiring 10 is connected in advance to the output terminals SINn and SINn + 1 of the data signal line driving circuit 6.
- the present invention is not limited to this, and the redundant TFT element 8 May be provided as many as the number of output terminals of the data signal line driving circuit 6, and the second redundant wiring 10 may be provided as in the second embodiment to be described later.
- the third redundant wiring 11 is formed so as to intersect with the data signal lines SRn, SGn, SBn... And is connected to the drain electrode of the redundant TFT element 8 and the data signal line SGn.
- FIG. 5 is a diagram showing the flow of the output DATA output from the output terminal of the data signal line driving circuit 6 when repaired as shown in FIG.
- DATA can be supplied to the data signal line SGn.
- the redundant TFT element 8 provided in the signal distribution circuit 3 Repair can be performed using the first redundant wirings 9 a and 9 b, the second redundant wiring 10, and the third redundant wiring 11.
- the channel width of the driving TFT element 7 is large as in the conventional case, it takes time to search for a leak portion (defect portion) and cut with a laser, and there is no problem that productivity decreases.
- the driving TFT element 7 having a portion cut with the laser is cut with the laser. Since the channel width is different from that of the other driving TFT elements 7 that do not have the above-described portions, in the liquid crystal display device including the signal distribution circuit 3 using these driving TFT elements 7, the display quality is deteriorated. There was a problem that it would occur.
- the redundant TFT element 8 formed to have the same channel width as that of the driving TFT element 7 and the first redundant TFT without using the driving TFT element 7 in which the leak portion (defect portion) has occurred. Since the repair is performed using the wirings 9a and 9b, the second redundant wiring 10, and the third redundant wiring 11, the liquid crystal display device 1 that can suppress the deterioration of the display quality is realized. be able to.
- time-division driving is performed with the number of three divisions of RGB.
- the present invention is not limited to this, and is not limited to this.
- time division driving can be performed with an arbitrary number of divisions. As the number of divisions increases, the number of output terminals SINn, SINn + 1... Of the data signal line drive circuit 6 and the number of data signal line drive circuits 6 can be greatly reduced.
- FIG. 6 is a diagram showing an example when a disconnection occurs in a certain control signal line SEL G in the signal distribution circuit 3 provided in the liquid crystal display device 1 of the present embodiment.
- FIG. 7 is a diagram for explaining a case where the disconnection in the signal distribution circuit 3 shown in FIG. 6 is repaired using the fourth redundant wirings 12a and 12b.
- the first redundant wiring 9a is shared as the fourth redundant wiring 12a in order to reduce the formation area of the signal distribution circuit 3, but the present invention is not limited to this.
- a wiring corresponding to the redundant wiring 9a can be separately provided as the fourth redundant wiring 12a.
- a circled portion indicates a portion that is electrically connected using a laser
- a V portion indicates a portion that is appropriately electrically cut using a laser in accordance with a peripheral load (resistance / capacitance).
- the fourth redundant wiring 12b is formed so as to intersect the two first redundant wirings 9a and 9a, and the control signal line SEL G and the two first redundant wirings 9a and 9a are formed. 6 is electrically connected to the intersection of the fourth redundant wiring 12b and the two first redundant wirings 9a and 9a, thereby breaking the disconnection in the signal distribution circuit 3 shown in FIG. Can be repaired.
- FIG. 8 is a diagram illustrating the flow of the control signal supplied via the control signal line SEL G when repaired as shown in FIG.
- control signal is connected to the control signal line SEL G via the fourth redundant wirings 12a and 12b instead of the area where the disconnection occurs in the control signal line SEL G. It is supplied to the next driving TFT element 7.
- FIG. 9 is a diagram showing an example of the layout of the signal distribution circuit 3 provided in the liquid crystal display device 1 of the present embodiment.
- the drive TFT element 7 and the redundant TFT element 8 provided in the signal distribution circuit 3 are configured to have comb-shaped electrodes.
- the drive TFT element 7 and the redundant TFT element 8 are designed so that their electrode shapes are different but the channel width is the same.
- the driving TFT element 7 is formed so as to be sandwiched between the data signal line driving circuit 6 and the redundant TFT element 8, and the longitudinal direction of the driving TFT element 7 is the data signal line driving circuit. 6 are arranged so as to be orthogonal to the direction in which the respective output terminals are arranged, and the longitudinal direction of the redundant TFT element 8 is arranged in parallel with the direction in which the respective output terminals of the data signal line driving circuit 6 are arranged. Yes.
- FIG. 10 is a diagram showing an example of the layout of the signal distribution circuit 3a provided in the liquid crystal display device 1 of the second embodiment to be described later.
- each of the driving TFT element 7 and the redundant TFT element 8 provided in the signal distribution circuit 3a has a configuration having comb-shaped electrodes, and the redundant TFT element 8 is configured as shown in FIG. Unlike the case, it is formed in the region where the driving TFT element 7 is formed.
- the driving TFT element 7 and the redundant TFT element 8 are designed to have the same channel width as in FIG.
- the width in the direction orthogonal to the direction in which the output terminals of the data signal line driving circuit 6 are arranged that is, the data signal line driving circuit. Since the distance between one end of the display 6 and one end of the display area can be shortened, it is possible to reduce the frame area that becomes the non-display area in the liquid crystal display device 1.
- the location where the first redundant wiring 9a and the second control signal line SEL G intersect is electrically connected to the location where the first redundant wiring 9a and 9b intersect, and the second control signal A control signal supplied via the line SEL G can be supplied to the gate electrode of the redundant TFT element 8.
- the second redundant wiring 10 connected to the output terminal SINn of the data signal line driving circuit 6 is electrically disconnected, and output from the output terminal SINn of the data signal line driving circuit 6 to the source electrode of the redundant TFT element 8.
- the output DATA that has been output is not supplied.
- the third redundant wiring 11 is connected to the drain electrode of the redundant TFT element 8 and the data signal line SGn + 1.
- the redundant TFT element provided in the signal distribution circuit 3 does not need to be electrically disconnected from the leak portion (defect portion) in the drive TFT element 7 using a laser as in the prior art.
- the first redundant wiring 9 a, 9 b, the second redundant wiring 10, the third redundant wiring 11, and the fourth redundant wiring 12 b can be used for repair.
- FIG. 11 is a diagram schematically showing a part of the signal distribution circuit 3a provided in the liquid crystal display device 1 of the present embodiment.
- the second redundant wiring 10a is connected to the source electrode of the redundant TFT element 8, while the second redundant wiring 10b is connected to the second redundant wiring 10a and the data signal line driving circuit.
- the second redundant wiring 10a are formed in the vicinity of the output terminals SINn, SINn + 1,... Of the data signal line driving circuit 6 so as to intersect the output terminals SINn, SINn + 1,.
- FIG. 12 is a diagram showing an example when a leak (defect) occurs in a certain driving TFT element 7 in the signal distribution circuit 3a provided in the liquid crystal display device 1 of the present embodiment.
- FIG. 12 shows an example in which a leak (defect) occurs in the drive TFT element 7 connected to the data signal line SRn + 1.
- FIG. 13 shows a case where the signal distribution circuit 3a shown in FIG. 12 is repaired using the redundant TFT element 8, the first redundant wirings 9a and 9b, the second redundant wirings 10a and 10b, and the third redundant wiring 11. It is a figure for demonstrating.
- a circled portion indicates a portion that is electrically connected using a laser
- a portion X indicates a portion that is electrically disconnected using a laser
- a portion V is a peripheral load (resistance / capacitance).
- a portion to be electrically cut using a laser as appropriate is shown.
- both ends of the driving TFT element 7 connected to the data signal line SRn + 1 are electrically connected.
- the drive TFT element 7 is electrically separated from the data signal line SRn + 1.
- the second redundant wiring 10b is electrically connected to the intersection of the output terminal SINn + 1 of the data signal line driving circuit 6 and the second redundant wiring 10a, and the data signal line driving is performed on the source electrode of the redundant TFT element 8.
- the output DATA output from the output terminal SINn + 1 of the circuit 6 can be supplied.
- the first redundant wiring 9a is electrically connected at the intersection of the control signal line SEL R and the first redundant wiring 9b, and supplied to the gate electrode of the redundant TFT element 8 via the control signal line SEL R. Control signals can be supplied.
- the portion where the third redundant wiring 11 intersects with the data signal line SRn + 1 is electrically connected, and the output DATA output from the drain electrode of the redundant TFT element 8 can be output to the data signal line SRn + 1.
- FIG. 14 is a diagram showing a flow of the output DATA output from the output terminal SINn + 1 of the data signal line driving circuit 6 when repaired as shown in FIG.
- DATA can be supplied to the data signal line SRn + 1.
- the number of redundant TFT elements 8 can be provided smaller than the number of output terminals SINn, SINn + 1,... Can be realized.
- the second redundant wiring 10b is shared with the fourth redundant wiring 12b in order to reduce the formation area of the signal distribution circuit 3a.
- the present invention is not limited to this.
- a wiring corresponding to the second redundant wiring 10b can be separately provided as the fourth redundant wiring 12b.
- FIG. 15 is a diagram showing an example when a disconnection occurs in a certain control signal line SEL G in the signal distribution circuit 3a provided in the liquid crystal display device 1 of the present embodiment.
- FIG. 16 is a diagram for explaining a case where the disconnection in the signal distribution circuit 3a shown in FIG. 15 is repaired using the fourth redundant wirings 12a and 12b.
- a circled portion indicates a portion that is electrically connected using a laser
- a V portion indicates a portion that is appropriately electrically cut using a laser in accordance with a peripheral load (resistance / capacitance).
- the fourth redundant wiring 12a is formed so as to intersect with the control signal lines SEL R, SEL, G, SEL B and the fourth redundant wiring 12b, and the fourth redundant wiring 12b is The second redundant wirings 12a are formed so as to intersect with the fourth redundant wirings 12a.
- the fourth redundant wiring 12a is electrically connected to the control signal line SEL G and the fourth redundant wiring 12b so that the gate electrode of the driving TFT element 7 connected to the data signal line SGn + 1 is connected.
- the control signal supplied to the control signal line SEL G can be supplied through the fourth redundant wirings 12a and 12b.
- FIG. 17 is a diagram showing a flow of control signals supplied via the control signal line SEL G when repaired as shown in FIG.
- control signal is connected to the control signal line SEL G via the fourth redundant wirings 12a and 12b instead of the area where the disconnection occurs in the control signal line SEL G. It is supplied to the next driving TFT element 7.
- the signal distribution circuit 3a includes three sets (three) of redundant TFT elements 8 corresponding to the control signal line SEL R, the control signal line SEL G, and the control signal line SEL B, respectively.
- the driving circuit further includes a fourth redundant wiring
- the fourth redundant wiring includes the fourth redundant wiring and gate electrodes of the plurality of driving TFT elements.
- the fourth redundant wiring is used. It is configured to repair.
- the driving circuit includes a wiring that branches each output terminal of the data signal line driving circuit that outputs an image signal to be displayed in the display area into a plurality of paths, and each of the branched branches.
- a signal distribution circuit including a control signal line for inputting a control signal to the gate electrode of the driving TFT element is preferable.
- a different first signal is input to the gate electrode of the drive TFT element or the plurality of drive TFT elements. Even if a defect occurs in a plurality of wirings provided in the TFT, it does not take time to repair the leaked part (defect), and productivity can be improved.
- a display device including a signal distribution circuit which does not have can be realized.
- each output terminal of the data signal line driving circuit is branched into a first wiring, a second wiring, and a third wiring, and the first wiring, the second wiring,
- Each of the wiring and the third wiring is provided with the driving TFT element, and the first and second control signal lines for inputting the control signal are input to the gate electrodes of the driving TFT elements.
- Control signal lines and third control signal lines are provided, and the signal distribution circuit includes three sets of the redundant TFT elements corresponding to the control signal lines, the first redundant wiring, and the second redundant signal lines. It is preferable that the redundant wiring and the third redundant wiring are provided.
- each control signal line includes the redundant TFT element, the first redundant wiring, the second redundant wiring, and the third redundant wiring.
- the redundant TFT element corresponding to the first control signal line and the above-mentioned Repair can be performed using the first redundant wiring, the second redundant wiring, and the third redundant wiring.
- the driving TFT element is formed so as to be sandwiched between the data signal line driving circuit and the redundant TFT element, and the longitudinal direction of the driving TFT element is the data signal line driving circuit.
- the longitudinal direction of the redundant TFT elements is arranged in parallel with the direction in which the output terminals of the data signal line driving circuit are arranged. It is preferable.
- the driving TFT element is formed to be sandwiched between the data signal line driving circuit and the display region, and the longitudinal direction of the driving TFT element and the redundant TFT element is the data It is preferable that the output terminals of the signal line driving circuit are arranged so as to be orthogonal to the direction in which the output terminals are arranged, and the redundant TFT elements are formed so as to be sandwiched between the driving TFT elements.
- the formation area of the signal distribution circuit (SSD circuit) can be reduced, it is possible to reduce the frame area that is a non-display area in the display device.
- the semiconductor layer in the pixel TFT element and the driving TFT element is preferably formed of amorphous silicon.
- the semiconductor layer in the pixel TFT element and the driving TFT element is preferably formed of an oxide.
- the semiconductor layer can be formed from, for example, an amorphous oxide containing at least one element selected from In, Ga, and Zn, but is not limited thereto.
- the pixel TFT element and the semiconductor layer in the drive TFT element are preferably formed of microcrystalline silicon.
- the semiconductor layer in the pixel TFT element and the driving TFT element is preferably formed by stacking microcrystalline silicon and amorphous silicon.
- the semiconductor layer in the driving TFT element is formed by stacking microcrystalline silicon or microcrystalline silicon and amorphous silicon, the display device can be manufactured relatively inexpensively. Can do.
- the semiconductor layer in the pixel TFT element and the driving TFT element is preferably formed of polycrystalline silicon.
- the semiconductor layer in the pixel TFT element and the driving TFT element is preferably formed of continuous grain boundary crystalline silicon.
- the semiconductor layer in the driving TFT element is formed of polycrystalline silicon or continuous grain boundary crystalline silicon, the data signal line driving is performed in addition to the scanning line driving circuit and the signal distribution circuit (SSD circuit). Since the circuit can also be formed monolithically with the pixel TFT element, it is possible to realize a display device with high reliability and a narrowed frame region which is a non-display region.
- the present invention can be applied to semiconductor devices and display devices.
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Abstract
Description
以下、図1~図10に基づいて、本発明のチャネル幅の大きい駆動TFT素子を用いた駆動回路を備えた表示装置として、チャネル幅の大きい駆動TFT素子を用いた信号分配回路(SSD回路)を備えた液晶表示装置を例に挙げて説明をするが、上記駆動回路としては、上記信号分配回路に限定されることなく、チャネル幅の大きい駆動TFT素子を用いた構成であれば、例えば、走査信号線駆動回路やデータ信号線駆動回路などであってもよい。
次に、図11~図17に基づいて、本発明の第2の実施形態について説明する。本実施の形態は、第2の冗長配線10a・10bの配置位置および形状とが実施の形態1とは異なっており、冗長TFT素子8の数をデータ信号線駆動回路6の出力端子SINn・SINn+1・・・の数よりさらに少なく設けることができるという点以外については実施の形態1において説明したとおりである。説明の便宜上、上記の実施の形態1の図面に示した部材と同じ機能を有する部材については、同じ符号を付し、その説明を省略する。
3、3a 信号分配回路(駆動回路)
4 走査線駆動回路(駆動回路)
6 データ信号線駆動回路(駆動回路)
7 駆動TFT素子
8 冗長TFT素子
9a、9b 第1の冗長配線
10a、10b 第2の冗長配線
11 第3の冗長配線
12a、12b 第4の冗長配線
SEL R、SEL G、SEL B 制御信号線
R1 表示領域
Claims (12)
- マトリクス状に配された各画素と上記各画素毎に設けられた画素TFT素子とが設けられている表示領域と、
上記画素TFT素子とモノリシックに形成された複数の駆動TFT素子を備えている駆動回路が設けられている上記表示領域の周辺領域とを有する表示装置であって、
上記駆動TFT素子は、半導体層とゲート電極とソース電極とドレイン電極とを備えており、
上記半導体層の一方の面には上記ゲート電極が、上記半導体層の一方の面と対向する他方の面には上記ソース電極および上記ドレイン電極が、それぞれ設けられ、
上記ソース電極または上記ドレイン電極の何れか一方の電極は、他方の電極の一部を取り囲むように形成されており、
上記一方の電極が、上記他方の電極の一部を取り囲むように形成されている領域においては、上記一方の電極と上記他方の電極とは一定間隔離されており、
上記駆動回路には、上記駆動TFT素子と同じチャネル幅を有するように形成された冗長TFT素子と第1の冗長配線と第2の冗長配線と第3の冗長配線とが備えられており、
上記第1の冗長配線は、上記第1の冗長配線と上記複数の駆動TFT素子のゲート電極に異なる第1の信号を入力するために設けられた複数の配線中の何れか1本とを電気的に接続することにより、上記冗長TFT素子のゲート電極に、上記第1の冗長配線と電気的に接続された配線における上記第1の信号が入力されるように形成されており、
上記第2の冗長配線は、上記第2の冗長配線と上記複数の駆動TFT素子の上記ソース電極に異なる第2の信号を入力するために設けられた複数の配線中の何れか1本とを電気的に接続することにより、上記冗長TFT素子のソース電極に、上記第2の冗長配線と電気的に接続された配線における上記第2の信号が入力されるように形成されており、
上記第3の冗長配線は、上記冗長TFT素子のドレイン電極に電気的に接続されており、上記第3の冗長配線と上記複数の駆動TFT素子の上記ドレイン電極から上記異なる第2の信号を出力するために設けられた複数の配線中の何れか1本とを電気的に接続することにより、上記冗長TFT素子のドレイン電極から出力される上記第2の信号が、上記第3の冗長配線と電気的に接続された配線から出力されるように形成されていることを特徴とする表示装置。 - 上記駆動回路には、さらに、第4の冗長配線が備えられており、
上記第4の冗長配線は、上記第4の冗長配線と上記複数の駆動TFT素子のゲート電極に異なる第1の信号を入力するために設けられた複数の配線中の何れか1本とを、所定の間隔を有する複数の箇所で電気的に接続することにより、上記第4の冗長配線と電気的に接続された配線における上記第1の信号が、上記第4の冗長配線を介して上記配線に入力されるように形成されていることを特徴とする請求項1に記載の表示装置。 - 上記駆動回路は、上記表示領域に表示する画像信号を出力するデータ信号線駆動回路の各出力端子を複数の経路に分枝させた配線と、上記分枝させた各配線に設けられた上記駆動TFT素子と、上記データ信号線駆動回路の各出力端子に電気的に接続された上記各駆動TFT素子を水平期間の時分割で導通できるように駆動させるため、上記各駆動TFT素子のゲート電極に制御信号を入力するための制御信号線とを備えた信号分配回路であることを特徴とする請求項1または2に記載の表示装置。
- 上記データ信号線駆動回路の各出力端子は、第1の配線、第2の配線および第3の配線に分枝されており、
上記第1の配線、上記第2の配線および上記第3の配線のそれぞれには、上記駆動TFT素子が設けられており、
上記各駆動TFT素子のゲート電極には、上記制御信号を入力するための第1の制御信号線、第2の制御信号線および第3の制御信号線が設けられており、
上記信号分配回路には、上記各制御信号線に対応した3組の上記冗長TFT素子と上記第1の冗長配線と上記第2の冗長配線と上記第3の冗長配線とが備えられていることを特徴とする請求項3に記載の表示装置。 - 上記駆動TFT素子は、上記データ信号線駆動回路と上記冗長TFT素子との間に挟まれるように形成され、
上記駆動TFT素子の長手方向は、上記データ信号線駆動回路の各出力端子が配列される方向に対して直交するように配置され、
上記冗長TFT素子の長手方向は、上記データ信号線駆動回路の各出力端子が配列される方向と平行に配置されていることを特徴とする請求項3または4に記載の表示装置。 - 上記駆動TFT素子は、上記データ信号線駆動回路と上記表示領域との間に挟まれるように形成され、
上記駆動TFT素子および上記冗長TFT素子の長手方向は、上記データ信号線駆動回路の各出力端子が配列される方向に対して直交するように配置され、
上記冗長TFT素子は、上記駆動TFT素子の間に挟まれるように形成されていることを特徴とする請求項3または4に記載の表示装置。 - 上記画素TFT素子および上記駆動TFT素子における半導体層は、非晶質シリコンで形成されていることを特徴とする請求項1から6の何れか1項に記載の表示装置。
- 上記画素TFT素子および上記駆動TFT素子における半導体層は、酸化物で形成されていることを特徴とする請求項1から6の何れか1項に記載の表示装置。
- 上記画素TFT素子および上記駆動TFT素子における半導体層は、微結晶シリコンで形成されていることを特徴とする請求項1から6の何れか1項に記載の表示装置。
- 上記画素TFT素子および上記駆動TFT素子における半導体層は、多結晶シリコンで形成されていることを特徴とする請求項1から6の何れか1項に記載の表示装置。
- 上記画素TFT素子および上記駆動TFT素子における半導体層は、連続粒界結晶シリコンで形成されていることを特徴とする請求項1から6の何れか1項に記載の表示装置。
- 上記画素TFT素子および上記駆動TFT素子における半導体層は、微結晶シリコンと非晶質シリコンとが積層されて形成されていることを特徴とする請求項1から6の何れか1項に記載の表示装置。
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JP2011552663A JP5350495B2 (ja) | 2010-02-08 | 2010-11-26 | 表示装置 |
EP10845256.6A EP2535888A4 (en) | 2010-02-08 | 2010-11-26 | DISPLAY DEVICE |
CN2010800628561A CN102741913A (zh) | 2010-02-08 | 2010-11-26 | 显示装置 |
US13/574,049 US8723845B2 (en) | 2010-02-08 | 2010-11-26 | Display device |
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EP (1) | EP2535888A4 (ja) |
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Cited By (3)
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JP2011186362A (ja) * | 2010-03-11 | 2011-09-22 | Seiko Epson Corp | 電気光学装置及び電子機器 |
WO2015020010A1 (ja) * | 2013-08-07 | 2015-02-12 | 堺ディスプレイプロダクト株式会社 | 表示パネルの製造方法及び表示パネル |
KR20160060106A (ko) * | 2013-12-17 | 2016-05-27 | 센젠 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 디스플레이장치 및 그 테스트 라인의 수리 방법 |
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JP5148778B2 (ja) * | 2010-03-24 | 2013-02-20 | シャープ株式会社 | 信号分配装置および表示装置 |
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JP6101357B2 (ja) * | 2013-10-09 | 2017-03-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
KR102141204B1 (ko) * | 2013-11-20 | 2020-08-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 및 유기 발광 표시 장치의 리페어 방법 |
KR102152950B1 (ko) * | 2014-04-09 | 2020-09-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
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CN105867040A (zh) * | 2016-06-23 | 2016-08-17 | 武汉华星光电技术有限公司 | 阵列基板及其液晶显示面板 |
CN106252418B (zh) * | 2016-09-22 | 2018-05-15 | 南京华东电子信息科技股份有限公司 | 一种薄膜晶体管 |
CN108598094B (zh) * | 2018-05-25 | 2020-09-11 | 友达光电(昆山)有限公司 | 一种显示装置及该显示装置的薄膜晶体管的修补检测方法 |
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EP2535888A1 (en) | 2012-12-19 |
JP5350495B2 (ja) | 2013-11-27 |
EP2535888A4 (en) | 2013-10-23 |
US20120299887A1 (en) | 2012-11-29 |
US8723845B2 (en) | 2014-05-13 |
JPWO2011096125A1 (ja) | 2013-06-10 |
CN102741913A (zh) | 2012-10-17 |
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