WO2011089828A1 - 光照射装置、光照射方法および液晶パネルの製造方法 - Google Patents
光照射装置、光照射方法および液晶パネルの製造方法 Download PDFInfo
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- WO2011089828A1 WO2011089828A1 PCT/JP2010/073548 JP2010073548W WO2011089828A1 WO 2011089828 A1 WO2011089828 A1 WO 2011089828A1 JP 2010073548 W JP2010073548 W JP 2010073548W WO 2011089828 A1 WO2011089828 A1 WO 2011089828A1
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- mask
- substrate
- light irradiation
- displacement meter
- optical displacement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/703—Gap setting, e.g. in proximity printer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
Definitions
- the present invention relates to a light irradiation apparatus, a light irradiation method, and a method for manufacturing a liquid crystal panel.
- the present invention relates to an apparatus for irradiating a substrate such as mother glass for a liquid crystal panel through a mask.
- an exposure apparatus that irradiates light containing ultraviolet rays (exposure light) through a mask on which a pattern is formed and transfers the mask pattern onto a workpiece is used.
- an exposure apparatus there is a proximity exposure apparatus that transfers a mask pattern onto a work by bringing a mask and a work close to each other (for example, Patent Document 1).
- Such an exposure apparatus is also used in a process of bonding two substrates in a liquid crystal panel, and a large mask has been used in the process.
- a sealing material that is an ultraviolet curable resin is formed on the light-transmitting substrate, and after the liquid crystal material is dropped into the enclosure of the sealing material, another sheet is placed on the substrate.
- a light-transmitting substrate is placed, and light containing ultraviolet rays is applied to the sealing material through the light-transmitting substrate.
- a characteristic change may occur when the liquid crystal material is irradiated with ultraviolet rays. Therefore, a light shielding mask is used so that the ultraviolet rays are not irradiated except for the seal decomposition temperature.
- the light from the light source provided above the mask holding member is bonded to the bonded substrate disposed below the light shielding mask via the mask holding member and the light shielding mask held on the lower surface of the mask holding member. It comes to be irradiated.
- a mask holding member only the peripheral portion of the mask holding member is supported by the mask stage in order to secure a portion that transmits light from the light source. Thereby, the holding surface holding the light-shielding mask can be widened on the lower surface of the mask holding member.
- Patent Document 2 a wire is connected to a connecting portion fixed to a portion other than the peripheral portion of the mask holding member, and the connecting portion is lifted by the wire, whereby the mask holding member is bent. A technique for solving the problem is disclosed.
- the light irradiation device disclosed in Patent Document 2 is shown in FIG.
- the light irradiation apparatus 1000 shown in FIG. 1 includes a work stage unit 160 including a work stage main body 162 on which the bonded substrate 110 is placed, a light shielding mask 120 disposed in the vicinity of the bonded substrate 110, A mask holding member 130 that holds the light shielding mask 120 is included.
- the work stage unit 160 has a work moving mechanism 164, and a mask stage 166 is provided around the work stage unit 160. The upper part of the mask stage 166 supports the peripheral part 132 of the mask holding member 130.
- a suction groove 134 having a frame shape is formed on the lower surface of the mask holding member 130, and the plate-shaped light shielding mask 120 arranged so as to cover the entire suction groove 134 is reduced by the decompression of the suction groove 134. Adsorption is held.
- a connecting portion 136 is bonded and fixed to the upper surface of the mask holding member 130, and the connecting portion 136 is suspended by a wire 140 through a ring 142. Note that a lamp 150 that emits ultraviolet rays to irradiate the sealing material of the bonded substrate 110 is provided above the mask holding member 130.
- the peripheral portion 132 is supported by the mask stage 166, and the connecting portion 136 is pulled upward by the wire 140. ing.
- the mask holding member 130 is flattened without the portions other than the peripheral portion 132 being bent downward by its own weight. Therefore, in the light irradiation apparatus 1000, the problem of the bending of the mask holding member 130 can be solved.
- the inventor of the present application examined the operation of the light irradiation apparatus 2000 as shown in FIG. 2 and found the following problems.
- FIG. 2 is a schematic cross-sectional view showing a part of the light irradiation apparatus 2000 verified by the present inventor.
- the light irradiation apparatus 2000 shown in FIG. 2 includes a stage 220 on which the substrate 210 is placed, and a mask (light-shielding mask) 230 disposed in the vicinity of the substrate 210.
- the mask 230 is held by a plurality of adsorption tubes 240.
- the mask holding member 130 having the structure shown in FIG. 1 is not provided.
- the substrate 210 is a substrate on which a mother glass for a liquid crystal panel is bonded, and the mask 230 is a light shielding mask when the sealing material interposed between the bonded substrates 210 is cured with ultraviolet rays.
- the gap (proximity gap) between the mask 230 and the substrate 210 should be as small as possible.
- the mask 230 is adsorbed and held by depressurization of the plurality of adsorption tubes 240, so that the mask 230 adsorbed and held by the adsorption tubes 240 is bent.
- each adsorption tube 240 that adsorbs the mask 230 also has a height variation (that is, variation in the bottom height of each adsorption tube 240), and There are also surface uniformity of the stage 220 and thickness variation of the substrate 210.
- the minimum gap G 1 between the mask 230 and the substrate 210 is simply the distance between the bottom surface height of the suction tube 240 including the thickness of the mask 230 and the stage 220 including the thickness of the substrate 210. It is not decided only by it, but will be decided in a form including various variations. Further, these variations vary depending on the substrate 210 and / or the mask 230.
- the height of the stage 220 must be determined by estimating an excessive margin. If an excessive margin is provided, the gap (proximity gap) between the mask 230 and the substrate 210 becomes large, so that the exposure accuracy decreases.
- the present invention has been made in view of such a point, and a main object thereof is to provide a light irradiation apparatus capable of suppressing an excessive margin between a mask and a stage.
- a light irradiation apparatus is a light irradiation apparatus that irradiates light onto a substrate through a mask, and includes a suction tube that holds the mask and a stage on which the substrate is placed, It is arranged two-dimensionally with respect to the plane of the mask, and an optical displacement meter that measures the distance between the substrate and the mask is disposed on the stage, and the optical displacement meter is It is arranged at a position for measuring at least two points in the central region of the mask.
- the substrate includes a translucent substrate for an image display device, and the mask has a dimension of 1 meter or more on a side.
- the adsorption tube extends in a vertical direction, and the tip of the adsorption tube evacuates the mask so that the mask is held by the adsorption tube.
- the tips are arranged in a matrix.
- a mask peripheral edge holding part for holding the peripheral edge part of the mask is further provided.
- the optical displacement meter is arranged at a position for measuring five points in the central region of the mask. In a preferred embodiment, the optical displacement meter is disposed at a position for measuring nine points in a central region of the mask.
- the stage is connected to a lifting device that moves the stage in a vertical direction
- the optical displacement meter is connected to a control device that controls the lifting device, and the control
- the apparatus calculates a gap between the substrate and the mask based on the smallest distance among the distances measured by the optical displacement meter, and moves the lifting device so as to be the gap.
- a light source for irradiating ultraviolet rays is further provided above the mask.
- the light irradiation method according to the present invention is a light irradiation method of irradiating light onto a substrate through a mask, the step (a) of disposing a mask above the substrate, and moving the substrate to move the substrate.
- step (c) irradiating the substrate with light through the mask, and in the step (a), the mask is placed on the plane of the mask.
- the substrate is held by a two-dimensionally arranged adsorption tube, and the substrate is placed on a stage, and the stage is an optical type that measures the distance between the substrate and the mask.
- a displacement meter is disposed, and the optical displacement meter is disposed at a position for measuring at least two points in the central region of the mask, and is measured by the optical displacement meter in the step (b). Smallest distance Distance based, be close to said substrate and said mask is performed.
- the optical displacement meter is arranged at a position for measuring five points in the central region of the mask, and in the step (b), the smallest distance among the measurement distances of the five points. Based on the above, the substrate and the mask are brought close to each other.
- the optical displacement meter is disposed at a position for measuring nine points in the central region of the mask, and is the smallest distance among the nine measurement distances in the step (b). Based on the above, the substrate and the mask are brought close to each other.
- the substrate includes a translucent substrate for an image display device, and the mask has a dimension of 1 meter or more on a side.
- the photocurable resin formed on the substrate is cured.
- a pattern is formed by exposing a photoreceptor layer formed on the substrate.
- the method for producing a liquid crystal panel according to the present invention is a method for producing a liquid crystal panel in which a liquid crystal layer is disposed between a pair of substrates, and a step (a) of disposing a mask above the substrate constituting the liquid crystal panel; In the step (a), the method includes a step (b) of moving the substrate to bring the substrate and the mask close to each other, and a step (c) of irradiating the substrate with light through the mask.
- the mask is held by an adsorption tube arranged two-dimensionally with respect to the plane of the mask, and the substrate is placed on a stage, and the substrate and the mask are placed on the stage.
- An optical displacement meter for measuring a distance between the optical displacement meter and the optical displacement meter is disposed at a position for measuring at least two points in a central region of the mask, and in the step (b) The optical displacement Based on the smallest distance among the distances measured by it to close the said substrate and the mask is performed.
- the substrate is a mother glass for a liquid crystal panel, and the mask has a dimension of 1 meter or more on a side.
- a sealing material disposed between the pair of substrates is cured.
- a pattern is formed by exposing a photoreceptor layer formed on the substrate.
- the optical displacement meter is disposed at a position for measuring nine points in the central region of the mask, and is the smallest distance among the nine measurement distances in the step (b). Based on the above, the substrate and the mask are brought close to each other.
- the optical displacement meter that measures the distance between the substrate and the mask is held at least two points in the central region of the mask by holding the mask by the two-dimensionally arranged adsorption tubes. It is arranged at the position to measure. Therefore, even if the mask held by the suction tube is bent or the height of the suction tube varies, it is possible to suppress an excessive margin between the mask and the stage. As a result, a more appropriate interval (proximity gap) can be set.
- FIG. It is sectional drawing which shows the structure of the conventional light irradiation apparatus 1000.
- FIG. It is sectional drawing which shows the structure of the light irradiation apparatus 2000.
- FIG. It is sectional drawing which shows the structure of the light irradiation apparatus 100 which concerns on embodiment of this invention.
- 4 is a top view for explaining a central region 31 of the mask 30.
- FIG. It is sectional drawing for demonstrating the process of hardening the sealing material 12 located between a pair of board
- (A) to (c) is a process sectional view for explaining a light irradiation method according to an embodiment of the present invention.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 6 is a top view for explaining an arrangement position of the optical displacement meter 25.
- FIG. 3 schematically shows the configuration of the light irradiation apparatus 100 according to the embodiment of the present invention.
- the light irradiation apparatus 100 of the present embodiment is an apparatus that irradiates light onto a substrate through a mask 30, and is, for example, a UV irradiation apparatus.
- the light irradiation apparatus 100 includes an adsorption tube 40 that holds the mask 30 and a stage 20 on which the substrate 10 is placed.
- the adsorption tube 40 is two-dimensionally arranged with respect to the plane of the mask 30.
- the adsorption tube 40 extends in the vertical direction 90.
- the tip 30 a of the suction tube 40 sucks the mask 30 by vacuum, so that the mask 30 is held by the suction tube 40.
- the tips 40 a of the adsorption tubes 40 of the present embodiment are arranged in a matrix when viewed from above the mask 30.
- the adsorption tube 40 is made of, for example, a tubular member (for example, a glass tube) made of a translucent material.
- the stage 20 has an optical displacement meter 25 for measuring the distance between the substrate 10 and the mask 30.
- the optical displacement meter 25 is an optical sensor capable of measuring a distance using light (for example, laser light), and the amount of movement when the object moves from the original position to another place. It can be measured and calculated.
- the optical displacement meter 25 of this embodiment is a laser displacement meter.
- the laser displacement meter 25 is a non-contact type and can measure a wide range of materials.
- a triangulation type displacement meter for example, a CCD laser displacement meter
- a laser focus type can also be used.
- an optical displacement meter other than the laser displacement meter 25 can be used as long as it can be suitably used in the apparatus of the present embodiment.
- the laser displacement meter 25 is disposed at a position for measuring at least two points in the central region 31 of the mask 30.
- the laser displacement meter 25 is arranged at a position corresponding to the central region 31 of the mask 30 because the mask 30 bends due to the influence of gravity, and a portion 30a where the mask 30 is closest to the substrate 10 exists in the central region 31 due to the bending. Because it does.
- FIG. 4 is a diagram for explaining the central region 31 of the mask 30.
- the central region 31 of the mask 30 of the present embodiment means the region 31 around (35) around the center point C of the mask 30 when the mask 30 is viewed from above.
- the central region 31 of the mask 30 is a region within the boundary 35 where the distance from the center point C of the mask 30 to one side 37a (or 37b) of the mask 30 is halved. is there.
- the distance L1 from the center point C to the boundary 35 and the distance L2 from the boundary 35 to the side 37a are the same, and the distance L3 from the center point C to the boundary 35 and from the boundary 35 to the side 37b. Is the same as the distance L4.
- the light source 50 is provided above the mask 30.
- the light source 50 of the present embodiment is a light source (UV light source) that emits light including ultraviolet rays.
- the substrate 10 includes a translucent substrate for an image display device.
- the substrate 10 of this embodiment is a glass substrate for a liquid crystal panel (for example, 8th generation to 10th generation mother glass).
- the substrate 10 in this example is a laminate of two pieces of mother glass for a liquid crystal panel.
- the mask 30 of this embodiment has a dimension of 1 meter or more on a side.
- the mask 30 of the present embodiment has dimensions corresponding to the substrate (mother glass) 10.
- the mask 30 is held by the two-dimensionally arranged adsorption tubes 40, so that the central portion of the mask 30 is compared with an apparatus that holds only the end of the mask 30. And the difference in distance between the end portions can be reduced. Further, even if the height of the mask 30 varies due to the bending (39) between the adsorption tubes 40, it can be dealt with satisfactorily. That is, in the configuration of the present embodiment, the laser displacement meter 25 that measures the distance between the substrate 10 and the mask 30 is provided on the stage 20, and the laser displacement meter 25 is further provided in the central region 31 of the mask 30. It is arranged at a position to measure at least two points.
- the distance (substantially minimum distance) G between the mask 30 and the substrate 10 can be measured without contact. Therefore, even if the mask 30 held by the suction tube 40 is bent or the height of the suction tube 40 varies, it is possible to suppress an excessive margin between the mask 30 and the stage 20. can do. As a result, a more appropriate interval (proximity gap) can be set.
- FIG. 5 shows a process of exposing the mask 30 close to the substrate 10.
- the substrate 10 includes a lower substrate 10a and an upper substrate 10b.
- a sealing material 12 is provided between the lower substrate 10a and the upper substrate 10b to join them together.
- the sealing material 12 is made of, for example, an ultraviolet curable resin and can be cured by light (for example, ultraviolet rays) 55 from a light source.
- a mask 30 is disposed in the vicinity of the substrate 10.
- the mask 30 in this example is a light shielding mask, and a light shielding pattern 32 is formed on the lower surface of the mask 30.
- the mask 30 is adsorbed and fixed by the tip 42 of the adsorption tube 40.
- the light 55 emitted from the light source 50 of the light irradiation device 100 reaches the sealing material 12 through the mask 30 having the light shielding pattern 32.
- the light 55 includes a light 55b traveling in an oblique direction together with a light 55a traveling in a substantially vertical direction.
- the gap G becomes wider than planned, the light 55b is irradiated in a region other than the region where the sealing material 12 exists, so the gap G is preferably as small as possible.
- the light irradiation apparatus 100 of the present embodiment it is possible to suppress an excessive margin between the mask 30 and the stage 20 and to set a more appropriate gap (proximity gap) G. Therefore, a good exposure process (sealing material curing process) can be performed.
- FIGS. 6A to 7C are process cross-sectional views for explaining the light irradiation method of the present embodiment.
- the light irradiation method of the present embodiment is a method of irradiating the substrate 10 with light through the mask 30.
- the substrate 10 is moved to bring the substrate 10 and the mask 30 close to each other.
- the substrate 10 is irradiated with light through the mask 30.
- at least two points in the central region 31 of the mask 30 are measured by the laser displacement meter 25.
- the substrate 10 and the mask 30 are brought close to each other.
- the substrate 10 is irradiated with light through the mask 30, so that the exposure process can be executed at a more appropriate interval (proximity gap).
- proximity gap a more appropriate interval
- the substrate 10 is placed on the stage 20.
- the substrate 10 is moved as indicated by an arrow 91 from a substrate transfer device (for example, a robot arm) and placed on the holding pins 22 of the stage 20.
- a substrate transfer device for example, a robot arm
- the stage 20 is raised as shown by the arrow 92, and the substrate 10 and the mask 30 are moved. Make it close.
- the upward movement 92 of the stage 20 can be performed by a stage lifting device (not shown).
- the laser displacement meter 25 is connected to a control device (not shown) that controls the stage lifting device.
- the control device calculates a gap between the substrate 10 and the mask 30 based on the smallest distance among the distances measured by the laser displacement meter 25, and moves the lifting device so as to be the gap. Can do.
- the distance between the stage 20 and the mask 30 may be reduced, it is possible to fix the stage 20 and bring the mask 30 closer to the stage 20.
- the mask 30 is adsorbed and fixed by the adsorption tube 40, it is more convenient to move the stage 20 than to move the mask 30.
- the substrate 10 and the mask 30 are brought close to each other to some extent.
- an alignment mark (not shown) attached to the substrate 10 and an alignment mark (not shown) attached to the mask 30 are used.
- the two (10, 30) are aligned with each other.
- the distance between the substrate 10 and the mask 30 is measured by the laser displacement meter 25 as described above so that the two do not come into contact with each other.
- a gap G between the substrate 10 and the mask 30 is defined, and light irradiation is performed at the gap G.
- the distance between the substrate 10 and the mask 30 can be defined based on the measurement of the laser displacement meter 25, it is possible to suppress an excessive margin between the substrate 10 and the mask 30. . That is, since a more appropriate gap (proximity gap) G can be set, a good exposure process (for example, a sealing material curing process) can be performed.
- the stage 20 is moved downward (arrow 93).
- the downward movement 93 of the stage 20 can be performed by a stage moving mechanism (not shown).
- the holding pins 22 of the stage 20 are taken out, and then the substrate 10 is moved as indicated by an arrow 94.
- the substrate 10 may be moved by using a substrate transfer device (for example, a robot arm), or a member corresponding to the holding pin 22 has a roller function or a substrate floating function, and the substrate 10 is moved by the member. You may make it make it.
- FIGS. 8 and 9 are a front view and a side view, respectively, of the light irradiation device 100 of the present embodiment.
- FIG. 10 is a top view of the light irradiation apparatus 100 of the present embodiment.
- the light irradiation apparatus 100 of this example includes a stage 20 and an adsorption tube 40 that holds a mask 30 disposed above the stage 20.
- the mask 30 is adsorbed and held by an adsorbing portion 42 located at the tip of the adsorbing tube 40.
- a mask peripheral edge holding portion 45 that holds the peripheral edge portion of the mask 30 is provided.
- the mask peripheral edge holding portion 45 adsorbs the peripheral edge portion of the mask 30, thereby suppressing the peripheral edge portion of the mask 30 from bending downward.
- a laser displacement meter (not shown) is disposed on the stage 20.
- the widths W1 and W2 of the stage 20 correspond to the dimensions of the substrate 10 or the mask 30 used in the light irradiation apparatus 100.
- the light source 50 is provided above the upper end of the adsorption tube 40.
- the beams 46 and 47 are provided.
- the arrangement position of the beams may be appropriate in accordance with the light irradiation apparatus actually used.
- the adsorption tube 40 is two-dimensionally arranged with respect to the plane of the mask 30.
- the pair of adsorption tubes 40 are arranged in a matrix, but the present invention is not limited to this, and other configurations may be adopted.
- a single adsorption tube 40 may be arranged in a matrix, or each adsorption tube 40 may be arranged in a triangular shape.
- a special arrangement for example, a concentric arrangement or a random arrangement determined so that the flatness of the mask 30 is suitable can be used.
- FIG. 11 shows an example of mother glass as the substrate 10.
- the substrate 10 in this example is a 10th generation mother glass.
- Each panel region 15 in the substrate 10 corresponds to a 40-inch liquid crystal panel, and the center C of the substrate 10 is also shown.
- FIG. 12 schematically shows a mask 30 corresponding to the substrate 10 shown in FIG.
- a central region 31 of the mask 30 is a range surrounded by a boundary 35.
- the laser displacement meter 25 is disposed on the stage 20 at a position for measuring at least two points in the central region 31.
- the laser displacement meter 25 is disposed at a position corresponding to the points 25A and 25B in the central region 31, as shown in FIG.
- the points 25A and 25B are positioned symmetrically about the center C and the virtual line 70A.
- the effect is particularly great when it is empirically found that the deflection of the mask 30 increases around the points 25A and 25B in the central region 31.
- the gap G is often defined based on the distance at the point 25A.
- the gap G is often defined based on the distance at the point 25B.
- FIG. 13 shows another arrangement example of the laser displacement meter 25.
- the laser displacement meter 25 is arranged at a position corresponding to the points 25A and 25B in the central region 31 with point symmetry with respect to the center C.
- the effect is particularly great when it has been empirically found that the deflection of the mask 30 increases around the points 25A and 25B.
- the gap G is often defined based on the distance at the point 25A.
- the half portion (lower right portion) on the point 25B side of the mask 30 is heavy, the gap G is often defined based on the distance at the point 25B.
- the center C of the mask 30 may be likely to be close to the substrate 10.
- the laser displacement meter 25 can be disposed at a position corresponding to the point 25C together with the points 25A and 25B.
- the gap G is often defined based on the distance at the point 25A.
- the half portion (right side portion) on the point 25B side of the mask 30 is heavy, the gap G is often defined based on the distance at the point 25B.
- the description of the case where the virtual line 70A or 70B is the center is basically as described above.
- the points 25A to 25C shown in FIG. 14 are in the form in which the point 25C is added to the points 25A and 25B shown in FIG. 13, but the point 25C is added to the points 25A and 25B shown in FIG. It is also possible to do. Furthermore, the points 25A and 25B are not limited to symmetrical positions, and can be arranged at asymmetric positions.
- FIG. 15 shows an arrangement example of the laser displacement meter 25 in a form in which five points (25A to 25E) are provided in the central region 31.
- five points (25A to 25E) are provided in the central region 31, it can be handled in almost all cases including the deflection of the mask 30 and the height variation of the suction pipe 40. As a result, it is possible to suppress an excessive margin between the substrate 10 and the mask 30.
- the five points (25A to 25E) it is possible to adopt a suitable one other than the arrangement shown in FIG.
- the points 25 ⁇ / b> A, 25 ⁇ / b> B, 25 ⁇ / b> D, and 25 ⁇ / b> E may be modified so that the points 25 ⁇ / b> A, 25 ⁇ / b> B, 25 ⁇ / b> D, and 25 ⁇ / b> E are located at the vertexes of the same rectangular shape as the boundary 35.
- an appropriate gap G can be set by the measurement of the laser displacement meter 25 without using a caliper or the like to locate the minimum distance between them.
- nine points (25A to 25I) it is possible to adopt a suitable one other than the arrangement shown in FIG.
- nine points (25A to 25I) may be arranged in a non-equal arrangement, or may be modified so that other points are located at a substantially circular or substantially elliptical position around the point 25C.
- the sealing material 12 disposed between the pair of substrates 10a and 10b is cured is mainly shown, but the present invention is not limited thereto.
- the technology according to the embodiment of the present invention can be widely applied as long as the substrate 10 is irradiated with light through the mask 30.
- the technique of this embodiment can be applied to, for example, forming a pattern by exposing a photoreceptor layer formed on the substrate 10.
- the mother glass for liquid crystal panel (for example, the 8th generation to 10th generation mother glass) has been described as an example of the substrate 10, but a translucent substrate (for example, a larger transparent substrate) (for example, Glass substrate), or a light-transmitting substrate smaller than that (for example, a glass substrate) can also be used.
- a translucent substrate for example, a larger transparent substrate
- a light-transmitting substrate smaller than that for example, a glass substrate
- the technology according to the embodiment of the present invention is not limited to the manufacturing method of the liquid crystal panel, and can be applied to a method including a light irradiation step. Therefore, the substrate 10 of the present embodiment is not limited to a substrate for a liquid crystal panel, and a substrate for another image display device can also be used. A flat panel such as a PDP (plasma display panel) or an organic EL It is also possible to use a display substrate.
- the technology according to the embodiment of the present invention can be used in an exposure process for manufacturing a semiconductor device.
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Abstract
Description
なお、本出願は2010年1月22日に出願された日本国特許出願2010-12489号に基づく優先権を主張しており、その出願の全内容は本明細書中に参照として組み入れられている。
ある好適な実施形態において、前記基板は、画像表示装置用の透光性基板を含み、前記マスクは、一辺1メートル以上の寸法を有する。
ある好適な実施形態において、前記吸着管は、鉛直方向に延びており、前記吸着管の先端が前記マスクを真空吸引することによって、前記マスクは前記吸着管に保持されており、前記吸着管の先端は、行列状に配置されている。
ある好適な実施形態では、さらに、前記マスクの周縁部を保持するマスク周縁保持部が設けられている。
ある好適な実施形態において、前記光学式変位計は、前記マスクの中央領域における5点を測定する位置に配置されている。
ある好適な実施形態において、前記光学式変位計は、前記マスクの中央領域における9点を測定する位置に配置されている。
ある好適な実施形態において、前記ステージは、前記ステージを上下方向に移動する昇降装置に接続されており、前記光学式変位計は、前記昇降装置を制御する制御装置に接続されており、前記制御装置は、前記光学式変位計によって測定された距離のうち最も小さい距離に基づいて前記基板と前記マスクの間のギャップを算出し、前記ギャップになるように前記昇降装置を移動させる。
ある好適な実施形態では、さらに、紫外線を照射する光源が、前記マスクの上方に設けられている。
本発明に係る光照射方法は、マスクを介して基板に光を照射する光照射方法であり、前記基板の上方に、マスクを配置する工程(a)と、前記基板を移動させて、前記基板と前記マスクとを近接させる工程(b)と、前記マスクを介して、前記基板に光を照射する工程(c)とを含み、前記工程(a)において、前記マスクは、前記マスクの平面に対して二次元的に配列された吸着管によって保持されており、前記基板は、ステージの上に載置されており、前記ステージには、前記基板とマスクとの間の距離を測定する光学式変位計が配置されており、前記光学式変位計は、前記マスクの中央領域における少なくとも2点を測定する位置に配置されており、前記工程(b)において、前記光学式変位計によって測定された距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される。
ある好適な実施形態では、前記光学式変位計は、前記マスクの中央領域における5点を測定する位置に配置されており、前記工程(b)において、前記5点の測定距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される。
ある好適な実施形態において、前記光学式変位計は、前記マスクの中央領域における9点を測定する位置に配置されており、前記工程(b)において、前記9点の測定距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される。
ある好適な実施形態において、前記基板は、画像表示装置用の透光性基板を含み、前記マスクは、一辺1メートル以上の寸法を有する。
ある好適な実施形態では、前記工程(c)において、前記基板に形成された光硬化樹脂を硬化させる。
ある好適な実施形態では、前記工程(c)において、前記基板に形成された感光体層を露光することによってパターンを形成する。
本発明に係る液晶パネルの製造方法は、一対の基板の間に液晶層が配置された液晶パネルの製造方法であり、液晶パネルを構成する基板の上方に、マスクを配置する工程(a)と、前記基板を移動させて、前記基板と前記マスクとを近接させる工程(b)と、前記マスクを介して、前記基板に光を照射する工程(c)とを含み、前記工程(a)において、前記マスクは、前記マスクの平面に対して二次元的に配列された吸着管によって保持されており、前記基板は、ステージの上に載置されており、前記ステージには、前記基板とマスクとの間の距離を測定する光学式変位計が配置されており、前記光学式変位計は、前記マスクの中央領域における少なくとも2点を測定する位置に配置されており、前記工程(b)において、前記光学式変位計によって測定された距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される。
ある好適な実施形態において、前記基板は、液晶パネル用マザーガラスであり、前記マスクは、一辺1メートル以上の寸法を有する。
ある好適な実施形態では、前記工程(c)において、前記一対の基板の間に配置されるシール材を硬化させる。
ある好適な実施形態では、前記工程(c)において、前記基板に形成された感光体層を露光することによってパターンを形成する。
ある好適な実施形態において、前記光学式変位計は、前記マスクの中央領域における9点を測定する位置に配置されており、前記工程(b)において、前記9点の測定距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される。
10a 下基板
10b 上基板
12 シール材
15 パネル領域
20 ステージ
22 保持ピン
25 光学式変位計(レーザ変位計)
30 マスク
31 中央領域
32 遮光パターン
35 境界
40 吸着管
42 吸着部
45 マスク周縁保持部
46、47 梁
50 光源
55 光
90 鉛直方向
100 光照射装置
1000 光照射装置
Claims (19)
- マスクを介して基板に光を照射する光照射装置であって、
前記マスクを保持する吸着管と、
前記基板を載置するステージと
を備え、
前記吸着管は、前記マスクの平面に対して二次元的に配列されており、
前記ステージには、前記基板とマスクとの間の距離を測定する光学式変位計が配置されており、
前記光学式変位計は、前記マスクの中央領域における少なくとも2点を測定する位置に配置されている、光照射装置。 - 前記基板は、画像表示装置用の透光性基板を含み、
前記マスクは、一辺1メートル以上の寸法を有する、請求項1に記載の光照射装置。 - 前記吸着管は、鉛直方向に延びており、
前記吸着管の先端が前記マスクを真空吸引することによって、前記マスクは前記吸着管に保持されており、
前記吸着管の先端は、行列状に配置されている、請求項1または2に記載の光照射装置。 - さらに、前記マスクの周縁部を保持するマスク周縁保持部が設けられている、請求項3に記載の光照射装置。
- 前記光学式変位計は、前記マスクの中央領域における5点を測定する位置に配置されている、請求項4に記載の光照射装置。
- 前記光学式変位計は、前記マスクの中央領域における9点を測定する位置に配置されている、請求項4に記載の光照射装置。
- 前記ステージは、前記ステージを上下方向に移動する昇降装置に接続されており、
前記光学式変位計は、前記昇降装置を制御する制御装置に接続されており、
前記制御装置は、前記光学式変位計によって測定された距離のうち最も小さい距離に基づいて前記基板と前記マスクの間のギャップを算出し、前記ギャップになるように前記昇降装置を移動させることを特徴とする、請求項1から6の一つに記載の光照射装置。 - さらに、紫外線を照射する光源が、前記マスクの上方に設けられている、請求項1から7の何れか一つに記載の光照射装置。
- マスクを介して基板に光を照射する光照射方法であって、
前記基板の上方に、マスクを配置する工程(a)と、
前記基板を移動させて、前記基板と前記マスクとを近接させる工程(b)と、
前記マスクを介して、前記基板に光を照射する工程(c)と
を含み、
前記工程(a)において、
前記マスクは、前記マスクの平面に対して二次元的に配列された吸着管によって保持されており、
前記基板は、ステージの上に載置されており、
前記ステージには、前記基板とマスクとの間の距離を測定する光学式変位計が配置されており、
前記光学式変位計は、前記マスクの中央領域における少なくとも2点を測定する位置に配置されており、
前記工程(b)において、
前記光学式変位計によって測定された距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される、光照射方法。 - 前記光学式変位計は、前記マスクの中央領域における5点を測定する位置に配置されており、
前記工程(b)において、
前記5点の測定距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される、請求項9に記載の光照射方法。 - 前記光学式変位計は、前記マスクの中央領域における9点を測定する位置に配置されており、
前記工程(b)において、
前記9点の測定距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される、請求項9に記載の光照射方法。 - 前記基板は、画像表示装置用の透光性基板を含み、
前記マスクは、一辺1メートル以上の寸法を有する、請求項9に記載の光照射方法。 - 前記工程(c)において、前記基板に形成された光硬化樹脂を硬化させることを特徴とする、請求項9から12の何れか一つに記載の光照射方法。
- 前記工程(c)において、前記基板に形成された感光体層を露光することによってパターンを形成することを特徴とする、請求項9から12の何れか一つに記載の光照射方法。
- 一対の基板の間に液晶層が配置された液晶パネルの製造方法であって、
液晶パネルを構成する基板の上方に、マスクを配置する工程(a)と、
前記基板を移動させて、前記基板と前記マスクとを近接させる工程(b)と、
前記マスクを介して、前記基板に光を照射する工程(c)と
を含み、
前記工程(a)において、
前記マスクは、前記マスクの平面に対して二次元的に配列された吸着管によって保持されており、
前記基板は、ステージの上に載置されており、
前記ステージには、前記基板とマスクとの間の距離を測定する光学式変位計が配置されており、
前記光学式変位計は、前記マスクの中央領域における少なくとも2点を測定する位置に配置されており、
前記工程(b)において、
前記光学式変位計によって測定された距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される、液晶パネルの製造方法。 - 前記基板は、液晶パネル用マザーガラスであり、
前記マスクは、一辺1メートル以上の寸法を有する、請求項15に記載の液晶パネルの製造方法。 - 前記工程(c)において、前記一対の基板の間に配置されるシール材を硬化させることを特徴とする、請求項15または16に記載の液晶パネルの製造方法。
- 前記工程(c)において、前記基板に形成された感光体層を露光することによってパターンを形成することを特徴とする、請求項15または16に記載の液晶パネルの製造方法。
- 前記光学式変位計は、前記マスクの中央領域における9点を測定する位置に配置されており、
前記工程(b)において、
前記9点の測定距離のうち最も小さい距離に基づいて、前記基板と前記マスクとを近接させることが実行される、請求項15から18の何れか一つに記載の液晶パネルの製造方法。
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JP2015194582A (ja) * | 2014-03-31 | 2015-11-05 | 岩崎電気株式会社 | 照射装置 |
JP2019164236A (ja) * | 2018-03-19 | 2019-09-26 | 新電元工業株式会社 | 半導体装置の製造方法、及び、遮光性吸着治具 |
JP7030581B2 (ja) | 2018-03-19 | 2022-03-07 | 新電元工業株式会社 | 半導体装置の製造方法、及び、遮光性吸着治具 |
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