WO2011064971A1 - 電子装置の製造方法、電子装置、電子装置パッケージの製造方法、電子装置パッケージ - Google Patents
電子装置の製造方法、電子装置、電子装置パッケージの製造方法、電子装置パッケージ Download PDFInfo
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- WO2011064971A1 WO2011064971A1 PCT/JP2010/006794 JP2010006794W WO2011064971A1 WO 2011064971 A1 WO2011064971 A1 WO 2011064971A1 JP 2010006794 W JP2010006794 W JP 2010006794W WO 2011064971 A1 WO2011064971 A1 WO 2011064971A1
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- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Definitions
- the present invention relates to an electronic device manufacturing method, an electronic device, an electronic device package manufacturing method, and an electronic device package.
- a package-on-package (POP) in which a first semiconductor element is mounted on a substrate and a substrate on which a second semiconductor element is mounted is disposed above the first semiconductor element.
- POP package-on-package
- a semiconductor package having a structure has been proposed.
- a semiconductor device including a first semiconductor element used in such a POP structure semiconductor package a structure as shown in FIG. 8 has been proposed (see, for example, Patent Document 1).
- the semiconductor device of FIG. 8 includes a substrate 900 and a first semiconductor element 901 installed on the substrate 900, and the first semiconductor element 901 is covered with a molding material 902. A hole is formed in the molding material 902 and the hole is filled with a conductive material 903.
- the hole of the molding material 902 is formed by irradiating the molding material 902 with laser light.
- laser light it is difficult to accurately adjust the intensity and irradiation time of the laser light, and the surface of the substrate 900 is shaved by the laser light, making it difficult to obtain a highly reliable semiconductor package. .
- the step of disposing the electronic component on the base material, and the standing portion configured to include the thermally decomposable resin on the surface of the base material on which the electronic component is disposed are erected.
- a step of embedding the electronic component, covering the periphery of the standing part, and providing a sealing material so that a part of the standing part is exposed from the surface, and heating the standing part is provided.
- a method for manufacturing an electronic device including a step of forming a hole penetrating the sealing material and a step of providing a conductor in the hole.
- the standing portion is provided on the substrate on which the electronic component is provided, and the sealing material is provided so as to cover the periphery of the standing portion and to expose a part of the standing portion from the surface. Thereafter, the standing portion is heated and thermally decomposed to form a hole in the sealing material. Therefore, the surface of the substrate is not scraped by the laser light, and a highly reliable electronic device can be obtained.
- the electronic device manufactured by the manufacturing method mentioned above can also be provided.
- a method for manufacturing an electronic device package in which an electronic device manufactured by the above-described manufacturing method and another electronic device are stacked, and the conductivity of the electronic device manufactured by the above-described manufacturing method.
- a laminated body comprising the electronic device and the other electronic device, the electronic device being mounted on the electronic device so that a body and an electrode formed on the other electronic device are in contact with each other
- a method of manufacturing an electronic device package including the step of bonding the conductor and the electrode of the other electronic device by heating the stacked body.
- an electronic device package manufactured by this electronic device package manufacturing method can also be provided.
- an electronic device manufacturing method an electronic device, an electronic device package manufacturing method, and an electronic device package capable of obtaining a highly reliable electronic device.
- the method for manufacturing an electronic device includes a step of placing an electronic component 10 on a base material (substrate) 11 and a surface of the base material 11 on which the electronic component 10 is placed.
- the electronic device is the semiconductor device 1
- the electronic component is the semiconductor chip 10.
- the substrate 11 is a substrate for mounting a semiconductor chip, and is a so-called double-sided circuit board or multilayer circuit board.
- the substrate 11 may be composed only of the core layer, may be composed of the build-up layer laminated on the front and back surfaces of the core layer, or may be composed only of the build-up layer.
- the build-up layer is formed by alternately laminating insulating layers and conductor circuit layers, and the core layer is composed of insulating layers and conductor circuit layers.
- conductor circuit layers are formed on the front and back surfaces of the substrate 11.
- the semiconductor chip 10 is electrically connected to the conductor circuit layer of the substrate 11.
- the conductor circuit layer of the substrate 11 and the semiconductor chip 10 are electrically connected via the solder bumps 12 on the back surface of the semiconductor chip 10.
- the solder bumps 12 may be lead-free solder or high melting point solder containing lead.
- the standing portion 13 is provided over the substrate 11.
- the standing portions 13 are provided so as to surround the semiconductor chip 10 when viewed from the substrate surface side.
- the upright portions 13 are provided at the four corners of the substrate 11, respectively.
- the semiconductor chip 10 may be provided so as to surround it.
- the standing portion 13 is formed in a columnar shape, for example, a columnar shape or a quadrangular prism shape.
- the height of the standing portion 13 from the surface of the substrate 11 is higher than the height of the semiconductor chip 10 from the substrate surface, for example, 10 to 1000 ⁇ m.
- Each standing portion 13 is formed directly on the conductor circuit layer of the substrate 11 and covers a part of the conductor circuit layer.
- the standing portion 13 is configured to include a thermally decomposable resin.
- the standing portion 13 is preferably made of a thermally decomposable resin as a main component (when the standing portion 13 contains a solvent, the thermally decomposable resin is 50 wt% or more based on the total amount excluding the solvent).
- the thermally decomposable resin component constituting the standing portion 13 include polycarbonate resin, polyacetal resin, polyester resin, polyamide resin, polyimide resin, polyether resin, polyurethane resin, (meta ) Acrylate resins and the like.
- the standing portion 13 includes a total of 50 wt% or more of resins selected from the group consisting of these resins (when the standing portion 13 contains a solvent, the total amount excluding the solvent is And 50 wt% or more of a thermally decomposable resin).
- the standing portion 13 preferably includes a polycarbonate resin as a main component.
- the resin composition which comprises the standing part 13 may be comprised only from 1 type of resin, and may contain 2 or more types of resin. In this specification, even when the material which comprises the standing part 13 consists of one type of resin, it is called a resin composition.
- the polycarbonate-based resin is not particularly limited, and examples thereof include polypropylene carbonate resin, polyethylene carbonate resin, 1,2-polybutylene carbonate resin, 1,3-polybutylene carbonate resin, 1,4-polybutylene carbonate resin, cis -2,3-polybutylene carbonate resin, trans-2,3-polybutylene carbonate resin, ⁇ , ⁇ -polyisobutylene carbonate resin, ⁇ , ⁇ -polyisobutylene carbonate resin, cis-1,2-polycyclobutylene carbonate resin Trans-1,2-polycyclobutylene carbonate resin, cis-1,3-polycyclobutylene carbonate resin, trans-1,3-polycyclobutylene carbonate resin, polyhexene carbonate resin, Cyclopropene carbonate resin, polycyclohexene carbonate resin, 1,3-polycyclohexane carbonate resin, poly (methylcyclohexene carbonate) resin, poly
- polynorbornene carbonate resin examples include exo-polynorbornene carbonate resin, endo-polynorbornene carbonate resin, trans-polynorbornene carbonate resin, and cis-polynorbornene carbonate resin.
- polycarbonate resin examples include polypropylene carbonate / polycyclohexene carbonate copolymer, 1,3-polycyclohexane carbonate / polynorbornene carbonate copolymer, and poly [(oxycarbonyloxy-1,1,4,4).
- 1,3-polycyclohexane carbonate / polynorbornene carbonate copolymer examples include, for example, 1,3-polycyclohexane carbonate / exo-polynorbornene carbonate copolymer, 1,3-polycyclohexane carbonate / endo-polynorbornene carbonate. A copolymer is mentioned.
- the polycarbonate resin which has at least 2 cyclic body can also be used.
- the number of cyclic bodies may be two or more, but is preferably 2 to 5, more preferably 2 or 3, and further preferably 2. By including such a number of cyclic bodies as the carbonate constituent unit, the adhesion to the substrate 11 is excellent.
- the plurality of cyclic bodies may have a linked polycyclic structure in which the vertices are connected to each other, but each side has a condensed polycyclic structure in which the sides are connected to each other. Is preferred. Thereby, both heat resistance in the process of sealing with the sealing material 14 and shortening of the thermal decomposition time of the standing portion 13 can be achieved. Moreover, it is preferable that each of the plurality of cyclic bodies is a 5-membered ring or a 6-membered ring. Thereby, since the planarity of a carbonate structural unit is maintained, the solubility with respect to a solvent can be stabilized more.
- Such a plurality of cyclic bodies are preferably alicyclic compounds. When each cyclic body is an alicyclic compound, the effects as described above are more remarkably exhibited.
- a structure represented by the following chemical formula (1) is a particularly preferable structure.
- the polycarbonate-type resin which has a carbonate structural unit represented by the said Chemical formula (1) can be obtained by the polycondensation reaction of decalin diol and carbonic acid diester like diphenyl carbonate.
- those derived from the carbon atom linked to the hydroxyl group of decalindiol are each decalin (that is, two cyclic bodies forming a condensed polycyclic structure). It is preferable that three or more atoms intervene between the carbon atoms that are bonded to the carbon atoms constituting and bonded to these hydroxyl groups.
- decomposability of a polycarbonate-type resin can be controlled, As a result, the heat resistance in the process sealed with the sealing material 14 and shortening the thermal decomposition time of the standing part 13 can be made compatible. Furthermore, the solubility with respect to a solvent can be stabilized more.
- Examples of the carbonate structural unit include those represented by the following chemical formulas (1A) and (1B).
- the plurality of cyclic bodies may be alicyclic compounds or heteroalicyclic compounds. Even when each cyclic body is a heteroalicyclic compound, the effects as described above are more remarkably exhibited.
- a structure represented by the following chemical formula (2) is a particularly preferable structure.
- polycarbonate-type resin which has a carbonate structural unit represented by the said Chemical formula (2) can be obtained by the polycondensation reaction of ether diol represented by the following Chemical formula (2a), and carbonic acid diester like diphenyl carbonate.
- the carbon atom derived from the hydroxyl group of the cyclic ether diol represented by the chemical formula (2a) forms the cyclic ether (that is, a condensed polycyclic structure). It is preferable that three or more atoms are interposed between these carbon atoms and bonded to the carbon atoms constituting the two cyclic bodies. Thereby, both heat resistance in the process of sealing with the sealing material 14 and shortening of the thermal decomposition time of the standing portion 13 can be achieved. Furthermore, the solubility with respect to the solvent mentioned later can be stabilized more.
- Examples of such a carbonate structural unit include those of the 1,4: 3,6-dianhydro-D-sorbitol (isosorbide) type represented by the following chemical formula (2A), and those represented by the following chemical formula (2B): 4: 3,6-dianhydro-D-mannitol (isomannide) type.
- the polycarbonate resin has a weight average molecular weight (Mw) of preferably 1,000 to 1,000,000, and more preferably 5,000 to 800,000.
- Mw weight average molecular weight
- the effect of improving the solubility with respect to various solvents and also the thermal decomposition property of the standing part 13 can be acquired by setting it as the said upper limit or less.
- the method for polymerizing the polycarbonate-based resin is not particularly limited.
- a known polymerization method such as a phosgene method (solvent method) or a transesterification method (melting method) can be used.
- the resin component is preferably blended at a ratio of 10 wt% to 100 wt% of the total amount (the total amount excluding the solvent when the solvent is included) constituting the standing portion 13. More preferably, it is blended at a ratio of 50 wt% or more, particularly 80 wt% to 100 wt%.
- the sealing temperature of the sealing material 14 is around 125 ° C.
- the temperature at which the sealing material 14 is post-cured (post-cured) is around 175 ° C. Therefore, it is difficult to thermally decompose the resin component at around 125 ° C.
- a resin component that thermally decomposes at around 175 ° C. is preferable.
- polypropylene carbonate is particularly preferable because it is difficult to thermally decompose at a temperature sealed with the sealing material 14 and is excellent in thermal decomposability at a temperature equal to or higher than the temperature sealed with the sealing material 14.
- 1,4-polybutylene carbonate, 1,3-polycyclohexane carbonate / polynorbornene carbonate copolymer is particularly preferable because it is difficult to thermally decompose at a temperature sealed with the sealing material 14 and is excellent in thermal decomposability at a temperature equal to or higher than the temperature sealed with the sealing material 14.
- the thermally decomposable resin composition contains a polycarbonate resin, a polyacetal resin, a polyester resin, a polyamide resin, a polyimide resin, a polyether resin, a polyurethane resin, or a (meth) acrylate resin, It preferably contains a photoacid generator.
- the thermal decomposition temperature of the standing part 13 can be reduced by exposing the standing part 13 (thermally decomposable resin composition).
- the temperature for thermal decomposition can be lowered by exposing the standing portion 13, thermal damage to the electronic device can be prevented.
- the standing portion 13 may be removed at the same time as the sealing material 14 is post-cured, it is more preferable.
- the photoacid generator is not particularly limited as long as it is a compound that generates acid upon irradiation with actinic radiation, and examples thereof include nucleophilic halides and complex metal halide anions. More specifically, tetrakis (pentafluorophenyl) borate-4-methylphenyl [4- (1-methylethyl) phenyl] iodonium (DPI-TPFPB), tris (4-t-butylphenyl) sulfonium tetrakis- (penta Fluorophenyl) borate (TTBPS-TPFPB), tris (4-t-butylphenyl) sulfonium hexafluorophosphate (TTBPS-HFP), triphenylsulfonium triflate (TPS-Tf), bis (4-tert-butylphenyl) iodonium Triflate (DTBPI-Tf), triazine (TAZ-101), triphen
- the content of the photoacid generator is preferably 0.1 to 15 parts by weight, particularly preferably 0.5 to 10 parts by weight with respect to 100 parts by weight of the resin component.
- the resin composition constituting the standing portion 13 includes a sensitizer that is a component having a function of developing or increasing the reactivity of the photoacid generator with respect to light of a specific type or wavelength, together with the photoacid generator. You can leave.
- the sensitizer is not particularly limited.
- the content of such a sensitizer is preferably 100 parts by weight or less, and more preferably 50 parts by weight or less with respect to 100 parts by weight of the photoacid generator described above.
- the resin composition constituting the standing portion 13 may contain, for example, an acid scavenger in addition to the above components.
- the acid scavenger is a component having a function of preventing an acid generated by light irradiation from diffusing to a site not irradiated with light. That is, it is a component having a function of preventing improvement in solubility in a developing solution at a site not irradiated with light and lowering of the thermal decomposition temperature. By including such an acid scavenger, patterning accuracy by development and thermal decomposition can be made higher.
- Examples of the acid scavenger include tri (n-propyl) amine, triethylamine, a compound represented by the following general formula (4), an amine represented by a compound represented by the following general formula (5), and the like. (Secondary amine, tertiary amine), and a mixture thereof.
- R 1 is H or an alkyl group.
- R 2 to R 6 are H, or any two are methyl groups and the rest are H.
- the content of the acid scavenger is preferably 0.01 to 10 parts by weight, and more preferably 0.02 to 8 parts by weight with respect to 100 parts by weight of the photoacid generator.
- the resin composition constituting the standing portion 13 may contain an antioxidant.
- the antioxidant has a function of preventing generation of undesirable acids and natural oxidation of the resin composition.
- the antioxidant is not particularly limited.
- Ciba IRGANOX registered trademark 1076 or Ciba IRGAFOS (registered trademark) 168 available from Ciba Fine Chemicals of Tarrytown, New York is preferably used. It is done.
- Ciba Irganox registered trademark
- Ciba Irganox 1330 Ciba Irganox 1010
- Ciba Cyanox registered trademark 1790
- Ciba Irganox 3114 Ciba Irganox 3114, 31 Ciga, etc.
- the content of the antioxidant is preferably 0.1 to 10 parts by weight, and more preferably 0.5 to 5 parts by weight with respect to 100 parts by weight of the resin component.
- the resin composition constituting the standing portion 13 may include an additive such as an acrylic, silicone, fluorine, vinyl or the like leveling agent, a silane coupling agent, or the like, if necessary.
- the silane coupling agent is not particularly limited.
- the 50% weight loss temperature of the thermally decomposable resin component contained in the thermally decomposable resin composition constituting the standing portion 13 is preferably 400 ° C. or lower, particularly 350 ° C. or lower.
- the 50% weight reduction temperature is 400 ° C. or less, the thermal effect on the semiconductor chip 10 and the sealing resin composition can be reduced when the standing portion 13 is thermally decomposed. That is, if the 50% weight reduction temperature is 400 ° C. or less, the standing portion 13 can be pyrolyzed by adjusting the heating time without performing heating exceeding 400 ° C. Therefore, when the standing portion 13 is thermally decomposed, the influence of heat on the semiconductor chip 10 and the sealing material 14 can be reduced.
- the difference between the 95% weight reduction temperature and the 5% weight reduction temperature of the thermally decomposable resin component contained in the thermally decomposable resin composition constituting the standing portion 13 is 1 ° C. or more and 300 ° C. or less. It is preferable. Especially, it is preferable that the difference of 95% weight reduction temperature and 5% weight reduction temperature is 5 degreeC or more and 200 degrees C or less.
- the thermally decomposable resin component contained in the thermally decomposable resin composition constituting the standing portion 13 is preferably a resin composition having a 5% weight loss temperature of 50 ° C. or higher, particularly 100 ° C. or higher. . By doing in this way, it can suppress that the standing part 13 unnecessarily thermally decomposes during the manufacturing process of the semiconductor device 1.
- the 50% weight loss temperature, the 95% weight loss temperature, and the 5% weight loss temperature are the weights of 50%, 95%, and 5% as measured by TG / DTA (thermal weight / differential thermal analysis), respectively. Means the temperature at which is lost.
- TG / DTA thermal weight / differential thermal analysis
- about 10 mg of a thermally decomposable resin component is precisely weighed and measured with a TG / DTA apparatus (manufactured by Seiko Instruments Inc.) (atmosphere: nitrogen, heating rate: 5 ° C./min).
- TG / DTA apparatus manufactured by Seiko Instruments Inc.
- a linear or branched thermally decomposable resin component having no alicyclic or aromatic skeleton is used.
- the molecular weight distribution of the resin component of the thermally decomposable resin composition may be adjusted.
- the molecular weight of the thermally decomposable resin component may be adjusted.
- Examples of a method for providing the standing portion 13 using the resin composition as described above include a spin coating method, a screen printing method, a coating method using a dispensing method, and the like.
- the standing portion 13 is provided by a spin coating method
- the resin composition is made into a varnish shape including a solvent.
- the said varnish is apply
- the method for removing the thermally decomposable resin composition is not particularly limited, and examples thereof include a method of removing by dry etching, a method of removing by development, and a method of removing by heating.
- the method of removing by dry etching is not particularly limited, but a resist layer is formed on a portion where the standing portion 13 is formed, dry etching is performed on portions other than the portion where the standing portion 13 is formed, The standing portion 13 can be formed by removing the resist.
- Examples of the dry etching method include plasma and reactive ion etching. Reactive ion etching that is excellent in anisotropy and that stabilizes the shape of the standing portion 13 is preferable.
- the resin composition When applying the method of removing by development and the method of removing by heating, the resin composition preferably contains a photoacid generator.
- the exposed portion is improved in solubility in the developer, and the unexposed portion (standing portion 13) is soluble in the developer. descend.
- the standing portion 13 can be formed by utilizing the difference in solubility with respect to the developer.
- the actinic radiation is not particularly limited, and examples thereof include i-line and g-line.
- the developer include solvents such as 2-heptanone, cyclopentanone, and PGMEA, and alkali developers such as an aqueous tetramethylammonium hydroxide solution and an aqueous sodium hydrogen carbonate solution.
- An aqueous tetramethylammonium oxide solution is preferred.
- the thermal decomposition temperature of the exposed portion is lowered, and the thermal decomposition temperature of the unexposed portion (standing portion 13) is not changed.
- the standing portion 13 can be formed by utilizing the difference in the thermal decomposition temperature.
- actinic radiation i-line, g-line and the like can be mentioned as in the case of the method of removing by development.
- a screen printing method is also exemplified. A resin composition to be the standing portion 13 is applied onto the substrate 11 through a screen printing plate. Thereafter, the resin composition is dried to form the standing portion 13.
- the resin composition preferably contains no solvent, and the drying step can be omitted by not containing the solvent.
- the standing portion 13 may be formed using a dispenser.
- the resin composition used as the standing part 13 shall contain a solvent, and let a resin composition be varnish-like. This varnish is placed in a portion where the standing portion 13 is formed using a dispenser and dried to form the standing portion 13.
- the semiconductor chip 10 is sealed with a sealing material 14 as shown in FIG.
- the sealing material 14 completely embeds the semiconductor chip 10 and embeds the periphery of the standing portion 13. Further, the upper surface of the standing portion 13 is exposed from the surface of the sealing material 14 opposite to the substrate 11.
- a resin composition for a sealing material having a low melt viscosity is used, and the resin composition for a sealing material is also provided in the gap between the bumps 12 provided between the semiconductor chip 10 and the substrate 11. Fill.
- the resin composition for encapsulant constituting the encapsulant 14 for example, a resin composition composed mainly of a cured product of a resin composition containing an epoxy resin, a curing agent, and an inorganic filler is preferable. Used.
- the sealing material 14 composed of such a constituent material can seal the semiconductor chip 10 with excellent adhesion, and can adjust the thermal expansion coefficient relatively easily.
- the epoxy resin examples include crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin; cresol novolak type epoxy resin, phenol novolak type epoxy resin Resin, novolak type epoxy resin such as naphthol novolak type epoxy resin; phenol aralkyl type epoxy resin such as phenylene skeleton containing phenol aralkyl type epoxy resin, biphenylene skeleton containing phenol aralkyl type epoxy resin, phenylene skeleton containing naphthol aralkyl type epoxy resin; Trifunctional epoxy resins such as methane type epoxy resins and alkyl-modified triphenol methane type epoxy resins; dicyclopentadiene Modified phenolic epoxy resins such as water-soluble phenolic epoxy resins and terpene-modified phenolic epoxy resins; heterocyclic ring-containing epoxy resins such as triazine nucleus-containing
- the epoxy resin those represented by the following general formula (6) are particularly preferably used. Since the epoxy resin represented by the following general formula (6) is bifunctional, the cured product of the epoxy resin composition using the epoxy resin has a low crosslinking density and a low thermal expansion coefficient, that is, during the solder reflow process, Since it is suitable for stress relaxation during heating of the electronic device, the magnitude of warpage during the process is reduced. Moreover, since the epoxy resin represented by the following general formula (6) is a crystalline low molecular weight resin, the melt viscosity is low, and the epoxy resin composition containing this has excellent fluidity.
- X is a group selected from a single bond, —O—, —S—, and —R 8 CR 8 —.
- R7 is an alkyl group having 1 to 6 carbon atoms and may be the same or different from each other.
- A is an integer of 0-4.
- R8 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and may be the same as or different from each other.
- the epoxy resin represented by the general formula (6) is 4,4′-diglycidoxybiphenyl or 3,3 ′, 5,5′-tetramethyl-4,4′-diglycidoxy Biphenyl and a molten mixture thereof are more preferably used. These compounds are excellent in the balance between workability and practicality, and can set the thermal expansion coefficient of the sealing material 14 low.
- the curing agent examples include linear aliphatic diamines having 2 to 20 carbon atoms such as ethylenediamine, trimethylenediamine, tetramethylenediamine, hexamethylenediamine, metaphenylenediamine, paraphenylenediamine, paraxylenediamine, 4, 4'-diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodicyclohexane, bis (4-aminophenyl) phenylmethane Aminos such as 1,5-diaminonaphthalene, metaxylenediamine, paraxylenediamine, 1,1-bis (4-aminophenyl) cyclohexane, dicyanodiamide, etc .; Resins such as aniline-modified
- the curing agent used for the constituent material of the sealing material 14 a compound having at least two phenolic hydroxyl groups in one molecule is preferably used.
- the curing agent include novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin; resol type phenol resin; polyoxystyrene such as polyparaoxystyrene; phenylene skeleton-containing phenol. Examples thereof include aralkyl resins and biphenylene skeleton-containing phenol aralkyl resins.
- a phenol resin represented by the following general formula (7) has the structure of a novolac type phenol resin and a triphenolmethane type phenol resin.
- the distance between the cross-linking points of the resin skeleton is short in terms of structure, and it has the effect of exhibiting good curability and moldability.
- the crosslink density is high.
- the resin composition using the phenol resin represented by the following general formula (7) has excellent curability and excellent moldability, and has thermal expansion and thermal shrinkage after molding / curing and after heat treatment. Since it becomes relatively small, the amount of warpage in the semiconductor device 1 can be reduced.
- R9, R10 and R11 are groups selected from alkyl groups having 1 to 4 carbon atoms, which may be the same or different.
- b is an integer from 0 to 3
- c is an integer from 0 to 4
- d is an integer from 0 to 3.
- the molar ratio (m / n) between m and n in the general formula (7) is preferably 1/5 to 5/1, more preferably 1/2 to 2/1. .
- Examples of the inorganic filler contained in the sealing material 14 include silica such as fused crushed silica, fused spherical silica, crystalline silica, and secondary agglomerated silica; alumina; titanium white; aluminum hydroxide; talc; clay; mica Glass fiber etc. are mentioned, 1 type or 2 types or more of these can be used in combination. Among these, fused spherical silica is particularly preferable. Thereby, the thermal expansion coefficient of the sealing material 14 can be set low.
- the particle shape is preferably infinitely spherical. Furthermore, the inorganic filling amount can be increased by mixing particles having different particle sizes, but the particle size is 0.01 ⁇ m or more and 150 ⁇ m or less in consideration of the filling property to the periphery of the solder bump 12. It is preferable that
- the resin composition constituting the sealing material 14 includes, in addition to the epoxy resin, the curing agent and the inorganic filler, a silane coupling agent and a hydroxyl group on two or more adjacent carbon atoms constituting the aromatic ring.
- a compound in which is bonded, and a curing accelerator may be contained.
- the silane coupling agent is not particularly limited, and examples thereof include epoxy silane, amino silane, ureido silane, mercapto silane, and the like, and one or more of these can be used in combination. Since such a silane coupling agent is contained in the resin composition, a reaction occurs between the epoxy resin and the inorganic filler, so that the interface strength between the epoxy resin and the inorganic filler can be improved.
- Examples of the epoxy silane include ⁇ -glycidoxypropyltriethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldimethoxysilane, and ⁇ - (3,4 epoxycyclohexyl) ethyltrimethoxysilane.
- Examples of aminosilane include ⁇ -aminopropyltriethoxysilane, ⁇ -aminopropyltrimethoxysilane, N- ⁇ (aminoethyl) ⁇ -aminopropyltrimethoxysilane, N- ⁇ (aminoethyl) ⁇ -aminopropylmethyldimethoxy.
- Silane N-phenyl ⁇ -aminopropyltriethoxysilane, N-phenyl ⁇ -aminopropyltrimethoxysilane, N- ⁇ (aminoethyl) ⁇ -aminopropyltriethoxysilane, N-6- (aminohexyl) 3-amino
- examples thereof include propyltrimethoxysilane and N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane, etc.
- ureidosilane include ⁇ -ureidopropyltriethoxysilane, hexamethyldimethane, and the like.
- silazane, and mercaptosilane examples thereof include ⁇ -mercaptopropyltrimethoxysilane.
- the silane coupling agent is synergistic with a compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring described later (hereinafter, such a compound may be referred to as a “hydroxyl-bonded compound”). Due to the effect, the resin composition has the effect of lowering the viscosity of the resin composition and improving the fluidity. Therefore, when the hydroxyl group-containing compound is contained in the resin composition, the effect obtained by adding the hydroxyl group-bonded compound is sufficiently obtained. In order to exhibit, it is preferable to include a silane coupling agent. As a result, even when a large amount of resin having a relatively high viscosity is blended or when a large amount of inorganic filler is blended, sufficient fluidity can be exhibited as a resin composition constituting the sealing material 14.
- hydroxyl-bonded compound the compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring
- hydroxyl-bonded compound is not particularly limited, but for example, a compound represented by the following general formula (9), The compound etc. which are represented by General formula (10) are mentioned.
- the hydroxyl group-bonded compound may have a substituent other than the hydroxyl group.
- R12 and R16 when one of R12 and R16 is a hydroxyl group and one is a hydroxyl group, the other is a group selected from hydrogen, a hydroxyl group or a substituent other than a hydroxyl group.
- R13, R14, and R15 are groups selected from hydrogen, a hydroxyl group, or a substituent other than a hydroxyl group, and may be the same as or different from each other.
- R17 and R23 when one of R17 and R23 is a hydroxyl group and one is a hydroxyl group, the other is a group selected from hydrogen, a hydroxyl group or a substituent other than a hydroxyl group.
- R18, R19, R20, R21, and R22 are groups selected from hydrogen, a hydroxyl group, or a substituent other than a hydroxyl group, and may be the same as or different from each other.
- specific examples of the compound represented by the general formula (9) include, for example, catechol, pyrogallol, gallic acid, gallic acid ester, and derivatives thereof represented by the following formula (11).
- Specific examples of the compound represented by the general formula (10) include 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene represented by the following formula (12), and derivatives thereof. These compounds may be used individually by 1 type, and may be used in combination of 2 or more type.
- compounds in which the main skeleton is a naphthalene ring in terms of ease of control of fluidity and curability and low volatility that is, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof) Is more preferably selected.
- the curing accelerator is not particularly limited.
- diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof; amines such as tributylamine and benzyldimethylamine Compounds; Imidazole compounds such as 2-methylimidazole; Organic phosphines such as triphenylphosphine and methyldiphenylphosphine; Tetraphenylphosphonium / tetraphenylborate, Tetraphenylphosphonium / tetrabenzoic acid borate, Tetraphenylphosphonium / tetranaphthoic acid borate Tetra-substituted phosphonium / tetra-substituted borate such as tetraphenylphosphonium / tetranaphthoyloxyborate, tetraphenylphosphonium / tetranaphthoy
- the resin composition for a sealing material may further include, if necessary, a colorant such as carbon black; a natural wax such as carnauba wax, a synthetic wax, a higher fatty acid or a metal salt thereof, Contains release agents such as paraffin and polyethylene oxide; low stress agents such as silicone oil and silicone rubber; ion scavengers such as hydrotalcite; flame retardants such as aluminum hydroxide; and various additives such as antioxidants May be. Thereafter, the resin composition for a sealing material is molded and cured by a molding method such as a transfer mold, a compression mold, or an injection mold to obtain a sealing material 14.
- a colorant such as carbon black
- a natural wax such as carnauba wax, a synthetic wax, a higher fatty acid or a metal salt thereof
- Contains release agents such as paraffin and polyethylene oxide
- low stress agents such as silicone oil and silicone rubber
- ion scavengers such as hydrotalcite
- flame retardants such as aluminum hydroxide
- the sealing material 14 has the same size and shape as the substrate 11, and the sealing material 14 completely covers the substrate 11.
- the side surface of the sealing material 14 and the side surface of the substrate 11 are all the same. Thereby, it can be set as the semiconductor device 1 which is hard to generate
- the structure (the structure shown in FIG. 3A) including the substrate 11, the standing part 13, the semiconductor chip 10, and the sealing material 14 is heated to thermally decompose the standing part 13. I do.
- the standing portion 13 is removed, and the hole 141 is formed.
- the heating temperature of the structure depends on the thermal decomposition temperature of the standing portion 13, it is preferably 100 ° C. to 300 ° C., more preferably 120 to 250 ° C., and preferably 150 to 200 ° C. It is particularly preferred.
- the structure is heated on an oven or hot plate.
- substrate 11 will be exposed to the bottom part of the hole 141 formed when the standing part 13 is removed.
- the residue can be removed by wet cleaning or dry cleaning after the standing portion 13 is removed by heating.
- cleaning can be performed with a solvent such as acetone, methyl ethyl ketone, ⁇ -butyrolactone, and polyethylene glycol methyl ether acetate.
- a dry cleaning method the residue can be removed by a method such as oxygen plasma or argon plasma.
- the conductor 15 is provided in the hole 141.
- the conductor 15 include metal particles such as solder balls.
- the conductor 15 and the conductor circuit layer of the substrate 11 are heated in advance at the melting point of the conductor 15 or more, and the conductor 15 is disposed in the hole 141 to join the conductor 15 and the conductor circuit layer. preferable.
- the conductor 15 may be filled in the hole 141.
- the conductor 15 include a conductive paste such as a solder paste and a copper paste.
- a film-like conductor 15 may be formed on the surface of the hole 141, and the insulating resin composition 17 may be filled inside the conductor 15.
- the solder ball 33 of the upper semiconductor device 3 is placed in the hole 141, and the conductor 15 and the solder ball 33 are placed. Should be in contact with each other.
- a film-like conductor is formed on the surface of the hole 141 and the inside of the conductor is filled with a conductive paste (conductor) such as solder paste or copper paste.
- the conductor 15 is in direct contact with the conductor circuit layer.
- the conductor 15 can have an underlayer, an intermediate layer, and a surface layer. For example, a Ti, Cr, Cu layer is used as the underlayer for the inner surface of the hole 141.
- FIG. 6A There is a method in which a Cu layer as an intermediate layer is formed by sputtering, followed by Ni / Au plating as a surface layer.
- the semiconductor device 1 is obtained.
- FIG. 6A another semiconductor device 3 is mounted on the semiconductor device 1.
- Another semiconductor device 3 includes a substrate 31 and a semiconductor chip 32 mounted on the substrate 31.
- a solder ball 33 is provided as a metal electrode on the back surface of the substrate 31 of the semiconductor device 3, and another semiconductor device 3 is mounted on the semiconductor device 1 so that the solder ball 33 and the conductor 15 are in contact with each other.
- the stacked body composed of the semiconductor device 1 and the semiconductor device 3 is heated, and the solder ball 33 and the conductor 15 are bonded.
- solder bumps 16 are formed on the back surface of the substrate 11 of the semiconductor device 1.
- the semiconductor package is mounted on the mounting substrate via the solder bumps 16.
- the thermally decomposable standing portion 13 is provided on the substrate 11 to cover the periphery of the standing portion 13 and to seal the sealing material 14 so that a part of the standing portion 13 is exposed from the surface. Provided. Thereafter, the standing portion 13 is heated and thermally decomposed to form the hole 141 in the sealing material 14. Therefore, the semiconductor device 1 with high reliability can be obtained without scraping the surface of the substrate 11 with laser light.
- the standing part 13 is comprised with a thermally decomposable resin composition, and since thermal decomposition temperature, ie, 50% weight reduction temperature, is 400 degrees C or less, it is easy to carry out thermal decomposition. Thereby, it can suppress that the residue of the standing part 13 exists in the hole 141. FIG. Therefore, a highly reliable semiconductor device 1 can be obtained.
- thermally decomposable resin that constitutes the thermally decomposable resin composition of the standing portion 13, it can be thermally decomposed at a relatively low temperature.
- the height dimension of the standing portion 13 can be secured, and the height dimension of the standing portion 13 from the surface of the substrate 11 is larger than the thickness of the semiconductor chip 10. It can be. Thereby, the hole 141 which penetrates the sealing material 14 can be formed reliably.
- the sealing material 14 is injected between the bumps 12 arranged between the substrate 11 and the semiconductor chip 10. Thereby, it is not necessary to fill the underfill between the bumps 12, and the manufacturing process of the semiconductor device 1 can be simplified.
- the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
- the semiconductor chip 10 is connected to the substrate 11 via the solder bumps 12.
- the present invention is not limited thereto, and the semiconductor chip 10 and the substrate 11 may be connected by wires.
- the resin composition for sealing materials was filled in the clearance gap between the bumps 12 provided between the semiconductor chip 10 and the board
- the underfill 21 may be filled in the gaps between the bumps 12 provided between the semiconductor chip 10 and the substrate 11. Then, what is necessary is just to manufacture a semiconductor package by the method similar to 1st embodiment.
- the weight average molecular weight of the synthesized 1,4-polybutylene carbonate was measured by GPC and found to be 35,000.
- the 50% weight loss temperature of the 1,4-polybutylene carbonate thus obtained was 311 ° C.
- the difference between the 95% weight reduction temperature and the 5% weight reduction temperature of 1,4-polybutylene carbonate was 34 ° C. Furthermore, the 5% weight loss temperature of 1,4-polybutylene carbonate was 277 ° C. 50% weight loss temperature, 95% weight loss temperature, and 5% weight loss temperature are 50%, 95%, and 5% weight lost when measured by TG / DTA (Thermogravimetric / Differential Thermal Analysis), respectively. It means temperature.
- TG / DTA Thermogravimetric / Differential Thermal Analysis
- thermoly decomposable resin composition 100 g of the obtained 1,4-polybutylene carbonate, 5 g of Rhosilsil Photoinitiator 2074 (FABA) (Rhodia Japan Ltd. Rhodorsil Photoinitiator 2074) as a photoacid generator, and 1-chloro-4-propoxythioxanthone (Lambson, UK) as a sensitizer SPEDCURE CPTX (trade name) 1.5 g manufactured by the company was dissolved in 159.8 g of anisole (solvent) to prepare a thermally decomposable resin composition having a resin concentration of 40%.
- FABA Rhosilsil Photoinitiator 2074
- 1-chloro-4-propoxythioxanthone Libson, UK
- the obtained thermally decomposable resin composition having a resin concentration of 40% was placed on an FR-4 substrate (35 mm square) having gold pads at the four corners of the surface by a dispenser (manufactured by Asymtek, model number: DV-01). I dispensed. Furthermore, by drying at 100 ° C. for 30 minutes, anisole was volatilized to form a standing part having a 600 ⁇ m square and a thickness of 300 ⁇ m.
- the resin composition for the sealing material is compression-molded (molding temperature: 125 ° C., molding pressure: 5.9 MPa) so that a part of the standing part is exposed on the entire surface of the FR-4 substrate.
- An evaluation sample was obtained in which the periphery of was covered with a sealing material having a thickness of 300 ⁇ m.
- EME-7351 manufactured by Sumitomo Bakelite Co., Ltd. was used. The upper surface of the standing part is exposed from the sealing material.
- Example 2 ⁇ Preparation of thermally decomposable resin composition> 1,4-polybutylene carbonate obtained in Example 1 was dissolved in 150 g of anisole (solvent) to prepare a thermally decomposable resin composition having a resin concentration of 40%.
- a standing part, a sealing material, and a sealing material were cured.
- a thermal history at 320 ° C. for 30 minutes was added to the evaluation sample, and the thermally decomposable resin composition constituting the standing part was thermally decomposed.
- a semiconductor device can be obtained by providing a conductor in the hole from which the standing part has been removed.
- 1,4-polybutylene carbonate was used as the thermally decomposable resin component constituting the standing portion.
- polypropylene carbonate or the like it is similarly 250 ° C. It can be thermally decomposed in 1 hour, and it has been found that a semiconductor device can be obtained as in Example 1.
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Abstract
Description
高密度の実装を実現するための半導体装置として、基板に第一半導体素子を搭載し、さらに、第一半導体素子の上方に第二半導体素子が搭載された基板を配置するパッケージオンパッケージ(POP)構造の半導体パッケージが提案されている。
このようなPOP構造の半導体パッケージに使用される第一半導体素子を備える半導体装置として、図8に示すような構造が提案されている(たとえば、特許文献1参照)。
そのため、レーザ光により基板表面を削ってしまうことがなく、信頼性の高い電子装置を得ることができる。
また、本発明によれば、上述した製造方法により製造した電子装置と他の電子装置とが積層された電子装置パッケージの製造方法であって、上述した製造方法により製造した前記電子装置の前記導電体と、前記他の電子装置に形成された電極とが接触するように、前記電子装置上に前記他の電子装置を搭載し、前記電子装置および前記他の電子装置とで構成される積層体を得る工程と、前記積層体を加熱することにより、前記導電体と前記他の電子装置の前記電極とを接合する工程と、を含む電子装置パッケージの製造方法も提供できる。さらには、この電子装置パッケージの製造方法により製造された電子装置パッケージも提供できる。
はじめに、本実施形態の概要について説明する。
本実施形態の電子装置の製造方法は、基材(基板)11上に電子部品10を配置する工程と、前記基材11の前記電子部品10が配置された面上に立設され、熱分解性の樹脂を含んで構成される立設部13を設ける工程と、前記電子部品10を埋め込み、前記立設部13の周囲を覆うとともに、表面から前記立設部13の一部が露出するように、封止材14を設ける工程と、前記立設部13を加熱して、立設部13を分解し、除去することにより、前記封止材14を貫通する孔141を形成する工程と、前記孔141内に導電体15を設ける工程と、を含む。
ここで、本実施形態では、電子装置は半導体装置1であり、電子部品は、半導体チップ10である。
はじめに、図1(A)に示すように、基板11上に半導体チップ10を実装する。
基板11は、半導体チップ搭載用の基板であり、いわゆる両面回路基板あるいは多層回路基板である。この基板11は、コア層のみからなるものでもよく、コア層の表裏面にビルドアップ層が積層されたものであってもよく、また、ビルドアップ層のみからなるものであってもよい。
ビルドアップ層は、絶縁層と、導体回路層とが交互に積層されたものであり、コア層は、絶縁層と導体回路層からなるものである。
基板11の表裏面には、図示しないが導体回路層(回路)が形成されている。
半導体チップ10は、基板11の導体回路層と電気的に接続されており、本実施形態では、半導体チップ10裏面の半田バンプ12を介して、基板11の導体回路層と半導体チップ10とが電気的に接続されている。
半田バンプ12は、鉛フリー半田であってもよく、また、鉛を含む高融点半田であってもよい。
立設部13は、柱状に形成され、たとえば、円柱形状、四角柱形状である。
立設部13の基板11表面からの高さは、半導体チップ10の基板表面からの高さよりも高く、たとえば、10~1000μmである。各立設部13は、基板11の導体回路層上に直接形成され、導体回路層の一部を覆っている。
これらの樹脂成分の中でも、後述する立設部13の熱分解時間を効果的に短縮するためには、立設部13は、ポリカーボネート系樹脂を主成分とすることが好ましい。
なお、立設部13を構成する樹脂組成物は1種類の樹脂のみから構成されていてもよく、また、2種以上の樹脂を含んでいてもよい。本明細書においては、立設部13を構成する材料が1種類の樹脂からなる場合も樹脂組成物と称する。
また、ポリノルボルネンカーボネート樹脂としては、例えばexo-ポリノルボルネンカーボネート樹脂、endo-ポリノルボルネンカーボネート樹脂、trans-ポリノルボルネンカーボネート樹脂、cis-ポリノルボルネンカーボネート樹脂が挙げられる。
また、1,3-ポリシクロヘキサンカーボネート/ポリノルボルネンカーボネート共重合体としては、例えば1,3-ポリシクロヘキサンカーボネート/exo-ポリノルボルネンカーボネート共重合体、1,3-ポリシクロヘキサンカーボネート/endo-ポリノルボルネンカーボネート共重合体が挙げられる。
環状体の数は、2つ以上であればよいが、2~5であるのが好ましく、2または3であるのがより好ましく、2であるのがさらに好ましい。カーボネート構成単位としてこのような数の環状体が含まれることにより、基板11との密着性が優れたものとなる。
また、複数の環状体は、それぞれ、5員環または6員環であるのが好ましい。これにより、カーボネート構成単位の平面性が保たれることから、溶剤に対する溶解性をより安定させることができる。
このような複数の環状体は、脂環式化合物であるのが好ましい。各環状体が脂環式化合物である場合には、前述したような効果がより顕著に発揮されることになる。
前記重量平均分子量を上記下限以上とすることにより、基板11に対する濡れ性が向上すること、さらに、成膜性を向上するという効果を得ることができる。また、上記上限値以下とすることで、各種溶剤に対する溶解性、さらには、立設部13の熱分解性を向上するという効果を得ることができる。
立設部13を構成する樹脂組成物がシランカップリング剤を含むことにより、パターニング時の密着性向上という効果がある。
すなわち、50%重量減少温度を400℃以下であれば、加熱時間を調整することで、400℃を超える加熱を行わずに、立設部13を熱分解することができる。従って、立設部13を熱分解する際に、半導体チップ10や封止材14への熱の影響を少なくすることができる。
このようにすることで、半導体装置1の製造プロセス中に立設部13が不要に、熱分解してしまうことを抑制できる。
なお、熱分解性の樹脂成分の50%重量減少温度を400℃以下とするためには、たとえば、脂環族や芳香族の骨格を有さない直鎖または分岐状の熱分解性樹脂成分を選択すればよい。
また、95%重量減少温度と5%重量減少温度との差を1℃以上、300℃以下とするためには、たとえば、熱分解性の樹脂組成物の樹脂成分の分子量分布を調整すればよい。
さらに、5%重量減少温度を50℃以上とするためには、たとえば、熱分解性樹脂成分の分子量を調整すればよい。
立設部13をスピンコート法で設ける場合、樹脂組成物を、溶剤を含むものとして、ワニス状とする。そして、スピンコート法により、前記ワニスを基板11上に塗布する。この場合には、ワニスは、たとえば、基板11の半導体チップ10を埋め込むように基板11上の全面に塗布されるため、立設部13以外の熱分解性の樹脂組成物を除去する必要がある。熱分解性の樹脂組成物を除去する方法としては、特に限定されるものではないが、ドライエッチングにより除去する方法、現像により除去する方法、加熱により除去する方法等が挙げられる。
また、前記現像液としては、2-ヘプタノン、シクロペンタノン、PGMEA等の溶剤、水酸化テトラメチルアンモニウム水溶液、炭酸水素ナトリウム水溶液等のアルカリ現像液を挙げることができるが、環境に対する負荷の少ない水酸化テトラメチルアンモニウム水溶液が好ましい。
また、立設部13を設ける方法としては、たとえば、スクリーン印刷法も挙げられる。立設部13となる樹脂組成物をスクリーン印刷板を介して、基板11上に塗布する。その後、樹脂組成物を乾燥させて、立設部13とする。
この時、樹脂組成物は溶剤を含有しない方が好ましく、溶剤を含有しないことにより、乾燥工程を省略することができる。
さらに、立設部13は、ディスペンサを用いて形成してもよい。立設部13となる樹脂組成物を溶剤を含むものとし、樹脂組成物をワニス状とする。このワニスを、ディスペンサを用い、立設部13を形成する部分に配置し、乾燥させて、立設部13とする。
なお、本実施形態では、溶融粘度の低い封止材用樹脂組成物を使用し、半導体チップ10と、基板11との間に設けられたバンプ12間の隙間にも封止材用樹脂組成物を充填する。
その後、封止材用樹脂組成物をトランスファーモールド、コンプレッションモールド、インジェクションモールド等の成形方法で成形、硬化させ、封止材14とする。成形方法としては、特に限定されないが、立設部13の位置ずれ、剥離を防止する観点から、コンプレッションモールドが好ましい。
ここで、基板面側からみて、封止材14は、基板11と同じ大きさ形状であり、封止材14は、基板11を完全に覆っている。封止材14の側面と、基板11の側面とはつらいちである。これにより、反りの発生しにくい半導体装置1とすることができる。
前記構造体の加熱温度は、立設部13の熱分解温度によるが、たとえば、100℃~300℃であることが好ましく、さらに、120~250℃であることが好ましく、150~200℃であることが特に好ましい。
前記構造体は、オーブン、ホットプレート上で加熱される。
なお、立設部13が除去されることで形成される孔141の底部には、基板11の導体回路層が露出することとなる。また、仮に、孔141の底部に立設部13の残渣が残った場合は、立設部13を加熱除去した後に、ウェット洗浄やドライ洗浄で残渣を除去することができる。ウェット洗浄方法としては、アセトン、メチルエチルケトン、γ―ブチロラクトン、ポリエチレングリコールメチルエーテルアセテート等の溶剤で洗浄することができる。また、ドライ洗浄方法としては、酸素プラズマ、アルゴンプラズマ等の方法により残渣を除去することができる。
また、図4(B)に示すように、孔141内に導電体15を充填してもよい。導電体15としては、たとえば、半田ペースト、銅ペースト等の導電ペーストがあげられる。
さらに、図5(A)に示すように、孔141の表面に膜状の導電体15を形成し、導電体15の内側に絶縁性樹脂組成物17を充填してもよい。孔141内に膜状の導電体15を形成した場合には、図5(B)に示すように、上段の半導体装置3の半田ボール33を孔141内に入れ、導電体15と半田ボール33とが接触するようにすればよい。
また、孔141の表面に膜状の導電体を形成し、さらに、導電体の内側を半田ペースト、銅ペースト等の導電ペースト(導電体)で充填する方法もあげられる。
導電体15は、導体回路層に直接接触することとなる。
膜状の導電体15を形成する場合には、導電体15は、下地層、中間層、表面層を有するものとするとができ、たとえば、下地層として、Ti、Cr、Cu層を孔141内面にスパッタリングで形成し、その後、メッキにより、中間層としてのCu層を形成し、さらに、表面層として、Ni/Auメッキをする方法が挙げられる。
以上の工程により、半導体装置1が得られることとなる。
その後、図6(A)に示すように、半導体装置1上に他の半導体装置3を搭載する。他の半導体装置3は基板31と、基板31上に搭載された半導体チップ32とを備える。半導体装置3の基板31の裏面には、金属電極として半田ボール33が設けられており、半田ボール33と、導電体15とが接触するように、半導体装置1上に他の半導体装置3を搭載する。その後、半導体装置1および半導体装置3で構成される積層体を加熱し、半田ボール33と、導電体15とを接合する。これにより、半導体パッケージが得られる。
次に、図6(B)に示すように、半導体装置1の基板11の裏面に半田バンプ16を形成する。そして、この半田バンプ16を介して、半導体パッケージが実装基板に実装される。
本実施形態では、基板11上に熱分解性の立設部13を設け、立設部13の周囲を覆うとともに、表面から立設部13の一部が露出するように、封止材14を設けている。
その後、立設部13を加熱し、熱分解することで、封止材14に孔141を形成している。
そのため、レーザ光により基板11表面を削ってしまうことがなく、信頼性の高い半導体装置1を得ることができる。
特に立設部13の熱分解性の樹脂組成物を構成する熱分解性の樹脂として、ポリカーボネート系樹脂を使用することで、比較的低温で熱分解できる。
例えば、前記実施形態では、半導体チップ10は、半田バンプ12を介して基板11に接続されていたが、これに限らず、ワイヤにより、半導体チップ10と基板11とを接続してもよい。
さらに、前記実施形態では、封止材用樹脂組成物を半導体チップ10と、基板11との間に設けられたバンプ12間の隙間に充填していたが、これに限られるものではない。図7に示すように、半導体チップ10と、基板11との間に設けられたバンプ12間の隙間にアンダーフィル21を充填してもよい。その後、第一実施形態と同様の方法で半導体パッケージを製造すればよい。
[実験例1]
前述した実施形態と同様の方法で、立設部を形成するとともに、封止材を貫通する孔を形成した。具体的には以下の通りである。
<1,4-ポリブチレンカーボネート樹脂の合成>
攪拌機、原料仕込み口、及び窒素ガス導入口を備えた三口フラスコに1,4-ブタンジオール(168g、1.864mol)と炭酸ジエチル(264.2g、2.236mol)を加え、窒素雰囲気下で90~100℃で加熱し、混合物を溶解した。次いで、20%ナトリウムエトキシドエタノール溶液(80ml、0.186mol)を加えた後、窒素雰囲気下、90~100℃で1時間攪拌した。その後、反応容器内を30kPa程度減圧し、90~100℃で1時間、120℃で1時間攪拌した。その後、更に、0.1kPaの真空下、150℃で1時間、180℃で2時間攪拌した。
合成した1,4-ポリブチレンカーボネートをGPCにより重量平均分子量を測定したところ、35,000であった。
このようにして得られた1,4-ポリブチレンカーボネートの50%重量減少温度は311℃であった。また、1,4-ポリブチレンカーボネートの95%重量減少温度と5%重量減少温度との差は、34℃であった。さらに、1,4-ポリブチレンカーボネートの5%重量減少温度は277℃であった。
50%重量減少温度、95%重量減少温度、5%重量減少温度とは、それぞれTG/DTA(熱重量/示差熱分析)で測定した時の50%、95%、5%の重量が失われる温度を意味する。TG/DTA測定は、1,4-ポリブチレンカーボネートを約10mg精秤し、TG/DTA装置(セイコーインスツルメンツ社製)により測定(雰囲気:窒素、昇温速度:5℃/分)した。
得られた1,4-ポリブチレンカーボネート100g、光酸発生剤としてRhodorsil Photoinitiator2074(FABA)(ローディアジャパン(株)社製 Rhodorsil Photoinitiator2074)5g、増感剤として1-クロロ-4‐プロポキシチオキサントン(英Lambson社製 SPEEDCURE CPTX(商品名))1.5gをアニソール(溶剤)159.8gに溶解し、樹脂濃度40%の熱分解性の樹脂組成物を作製した。
<立設部の作製>
得られた樹脂濃度40%の熱分解性の樹脂組成物を、ディスペンサ(Asymtek社製、型番:DV-01)により、表面の四隅に金パッドを有するFR-4基板(35mm角、)上にディスペンスした。さらに、100℃、30分間の条件で乾燥することにより、アニソールを揮散させ600μm角、厚さ300μmの立設部を形成した。
次に、FR-4基板全面を立設部の一部が露出するように、封止材用樹脂組成物を圧縮成形(成形温度:125℃、成形圧力:5.9MPa)し、立設部の周囲が厚さ300μmの封止材で覆われた評価用サンプルを得た。
封止材としては、EME-7351(住友ベークライト社製)の材料を使用した。
なお、立設部の上面は、封止材から露出している。
次に、評価用サンプルをオーブンに投入し、175℃、8時間の条件で封止材を熱硬化させるとともに熱分解性の樹脂組成物を熱分解させた。
得られたサンプルの孔を実体顕微鏡で観察したところ、基板表面に形成されている金パッドの表面および孔の壁面に熱分解性の樹脂組成物の残渣は確認されなかった。
このようにして立設部が除去された孔内に導電体を設けることで、半導体装置を得ることができる。
<熱分解性の樹脂組成物の作製>
実施例1で得られた1,4-ポリブチレンカーボネートをアニソール(溶剤)150gに溶解し、樹脂濃度40%の熱分解性の樹脂組成物を作製した。
<立設部の作製、封止材の作製、封止材の硬化>
実施例1と同様に立設部の作製、封止材の作製、封止材の硬化を行った。
<立設部の除去(孔の形成)>
さらに、評価用サンプルに320℃、30分の熱履歴を加え、立設部を構成している熱分解性の樹脂組成物を熱分解させた。
得られたサンプルの孔を実体顕微鏡で観察したところ、基板表面に形成されている金パッドの表面および孔の壁面に熱分解性の樹脂組成物の残渣は確認されなかった。
このようにして立設部が除去された孔内に導電体を設けることで、半導体装置を得ることができる。
Claims (13)
- 基材上に電子部品を配置する工程と、
前記基材の前記電子部品が配置された面上に熱分解性の樹脂を含む立設部を立設する工程と、
前記電子部品を埋め込み、前記立設部の周囲を覆うとともに、表面から前記立設部の一部が露出するように、封止材を設ける工程と、
前記立設部を加熱して、前記立設部を分解し、除去することにより、前記封止材を貫通する孔を形成する工程と、
前記孔内に導電体を設ける工程と、
を含む電子装置の製造方法。 - 請求項1に記載の電子装置の製造方法において、
前記電子部品は、半導体チップであり、
前記基材は、半導体チップ搭載用の基板である電子装置の製造方法。 - 請求項1または2に記載の電子装置の製造方法において、
前記基材の前記電子部品が設置される前記面上には、回路が形成され、
前記基材の前記電子部品が配置された面上に立設する立設部を設ける前記工程では
前記立設部は、前記基材の回路上に形成される電子装置の製造方法。 - 請求項1乃至3のいずれかに記載の電子装置の製造方法において、
前記立設部は、ポリカーボネート系樹脂、ポリアセタール系樹脂、ポリエステル系樹脂、ポリアミド系樹脂、ポリイミド系樹脂、ポリエーテル系樹脂、ポリウレタン系樹脂、(メタ)アクリレート系樹脂からなる群より選ばれる熱分解性の樹脂を合計で50wt%以上含む電子装置の製造方法。 - 請求項1乃至4のいずれかに記載の電子装置の製造方法において、
前記立設部は、ポリカーボネート系樹脂を主成分とする電子装置の製造方法。 - 請求項1乃至5のいずれかに記載の電子装置の製造方法において、
前記基材の前記電子部品が配置された面上に立設部を設ける前記工程では、
ディスペンサにより、前記立設部を構成する樹脂を前記基材上に配置して、前記立設部を設ける電子装置の製造方法。 - 請求項1乃至6のいずれかに記載の電子装置の製造方法において、
封止材を設ける前記工程では、前記封止材が前記基材全面を覆うように設けられる電子装置の製造方法。 - 請求項1に記載の電子装置の製造方法において、
前記熱分解性の樹脂は、50%重量減少温度が400℃以下である電子装置の製造方法。 - 請求項1に記載の電子装置の製造方法において、
前記熱分解性の樹脂は、5%重量減少温度が50℃以上である電子装置の製造方法。 - 請求項1に記載の電子装置の製造方法において、
前記熱分解性の樹脂は、95%重量減少温度と5%重量減少温度との差が、1℃以上300℃以下である電子装置の製造方法。 - 請求項1乃至10のいずれかに記載の電子装置の製造方法により製造された電子装置。
- 請求項1乃至10のいずれかに記載の電子装置の製造方法で製造された電子装置と他の電子装置とが積層された電子装置パッケージの製造方法であって、
請求項1乃至10に記載の電子装置の製造方法で製造された前記電子装置の前記導電体と、前記他の電子装置に形成された電極とが接触するように、前記電子装置上に前記他の電子装置を搭載し、前記電子装置および前記他の電子装置とで構成される積層体を得る工程と、
前記積層体を加熱することにより、前記導電体と前記他の電子装置の前記電極とを接合する工程と、
を含む電子装置パッケージの製造方法。 - 請求項12に記載の電子装置パッケージの製造方法で製造された電子装置パッケージ。
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US13/510,744 US20120228782A1 (en) | 2009-11-27 | 2010-11-19 | Method for manufacturing electronic device, electronic device, method for manufacturing electronic device package and electronic device package |
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