JP5682280B2 - 半導体素子封止体の製造方法および半導体パッケージの製造方法 - Google Patents
半導体素子封止体の製造方法および半導体パッケージの製造方法 Download PDFInfo
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- JP5682280B2 JP5682280B2 JP2010277521A JP2010277521A JP5682280B2 JP 5682280 B2 JP5682280 B2 JP 5682280B2 JP 2010277521 A JP2010277521 A JP 2010277521A JP 2010277521 A JP2010277521 A JP 2010277521A JP 5682280 B2 JP5682280 B2 JP 5682280B2
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Description
(1)少なくとも1つの電極パッドを有する複数の半導体素子と、導電性を有する複数の導体柱と、前記半導体素子および前記導体柱を封止する封止部とを有する半導体素子封止体の製造方法であって、
平板状をなすダミー基板を用意し、該ダミー基板上に、前記電極パッドが前記ダミー基板側となるように前記半導体素子を配置するとともに、加熱することで分解し気化する樹脂成分を含有する犠牲層を、前記導体柱を形成すべき位置に該導体柱の形状に対応して形成する半導体素子配置工程と、
前記半導体素子が配置され、かつ前記犠牲層が形成されている側の面に、前記ダミー基板と前記半導体素子と前記犠牲層とを覆うように封止して封止部を形成する封止部形成工程と、
前記封止部、前記半導体素子および前記犠牲層から前記ダミー基板を剥離させる剥離工程と、
前記犠牲層を、加熱することで前記樹脂成分を分解・気化させることにより除去して、前記封止部の前記導体柱を形成すべき位置に、第1の貫通孔を形成した後、該第1の貫通孔に前記導体柱を形成することにより、前記半導体素子封止体を得る導体柱形成工程と、
前記導体柱の双方の端部が露出するように、前記封止部の前記導体柱が露出していない側の面を研削および/または研磨する研削・研磨工程とを有することを特徴とする半導体素子封止体の製造方法。
前記犠牲層を形成しない領域に位置する前記薄膜に、前記活性エネルギー線を照射することで、前記樹脂成分の50%重量減少温度を低下させる第2の工程と、
前記薄膜を加熱して、前記領域に位置する前記薄膜に含まれる前記樹脂成分を選択的に分解・気化させることで、前記領域に位置する前記薄膜を除去する第3の工程とを経ることにより形成される上記(1)に記載の半導体素子封止体の製造方法。
平板状をなすシート材を用意し、該シート材上に、前記電極パッドが前記シート材側となるように前記半導体素子を配置するとともに、加熱することで分解し気化する樹脂成分を含有する犠牲層を、前記導体柱を形成すべき位置に該導体柱の形状に対応して形成する半導体素子配置工程と、
前記半導体素子が配置され、かつ前記犠牲層が形成されている側の面に、前記シート材と前記半導体素子と前記犠牲層とを覆うように封止して封止部を形成する封止部形成工程と、
前記電極パッドおよび前記犠牲層に対応するように、前記シート材の厚さ方向に複数の第2の貫通孔を形成する貫通孔形成工程と、
前記犠牲層を、加熱することで前記樹脂成分を分解・気化させることにより除去して、前記封止部の前記導体柱を形成すべき位置に、第1の貫通孔を形成した後、該第1の貫通孔に前記導体柱を形成することにより、前記半導体素子封止体を得る導体柱形成工程と、
前記導体柱の双方の端部が露出するように、前記封止部の前記導体柱が露出していない側の面を研削および/または研磨する研削・研磨工程とを有することを特徴とする半導体素子封止体の製造方法。
前記第2の貫通孔に導電性を有する導体ポストを形成する導体ポスト形成工程と、
前記シート材の前記半導体素子封止体とは反対の面側に、前記導体ポストに電気的に接続する配線を形成する配線形成工程と、
前記半導体素子封止体とは反対側の面に、前記配線の一部が露出するように、開口部を備える被覆部を形成する被覆部形成工程と、
前記開口部で露出する前記配線に、バンプを電気的に接続するバンプ接続工程と、
前記半導体素子毎に対応するように、前記半導体素子封止体を個片化することにより、複数の半導体パッケージを一括して得る個片化工程とを有することを特徴とする半導体パッケージの製造方法。
前記シート材の前記半導体素子封止体とは反対の面側に、前記導体ポストに電気的に接続する配線を形成する配線形成工程と、
前記半導体素子封止体とは反対側の面に、前記配線の一部が露出するように、開口部を備える被覆部を形成する被覆部形成工程と、
前記開口部で露出する前記配線に、バンプを電気的に接続するバンプ接続工程と、
前記半導体素子毎に対応するように、前記半導体素子封止体を個片化することにより、複数の半導体パッケージを一括して得る個片化工程とを有することを特徴とする半導体パッケージの製造方法。
図1は、本発明の半導体パッケージの製造方法により製造された半導体パッケージを備える半導体装置の一例を示す縦断面図、図2は、図1に示す半導体装置が備える各半導体パッケージを示す縦断面図である。なお、以下の説明では、図1、2中の上側を「上」、下側を「下」と言う。
以下、本発明の半導体パッケージの製造方法を適用したパッケージ20の製造方法について詳述する。
まず、パッケージ20を製造する製造方法の第1実施形態ついて説明する。
すなわち、パッケージ20の製造方法の第1実施形態では、平板状をなすダミー基板を用意し、このダミー基板上に、電極パッドがダミー基板側となるように半導体素子を配置するとともに、加熱することで分解し気化する樹脂成分を含有する犠牲層を、導体柱を形成すべき位置にこの導体柱の形状に対応して形成する半導体素子配置工程と、半導体素子が配置され、かつ犠牲層が形成されている側の面に、ダミー基板と半導体素子と犠牲層とを覆うように封止して封止部を形成する封止部形成工程と、封止部、半導体素子および犠牲層からダミー基板を剥離させる剥離工程と、犠牲層を、加熱することで樹脂成分を分解・気化させることにより除去して、封止部の導体柱を形成すべき位置に、第1の貫通孔を形成した後、この第1の貫通孔に導体柱を形成することにより半導体素子封止体を得る導体柱形成工程と、厚さ方向に複数の第2の貫通孔が形成されたシート材を用意し、各第2の貫通孔に電極パッドおよび導体柱が対応するように、半導体素子封止体にシート材を貼り合わせるシート材貼り合わせ工程と、第2の貫通孔に導電性を有する導体ポストを形成する導体ポスト形成工程と、シート材の半導体素子封止体とは反対の面側に、導体ポストに電気的に接続する配線を形成する配線形成工程と、半導体素子封止体とは反対側の面に、配線の一部が露出するように、開口部を備える被覆部を形成する被覆部形成工程と、開口部で露出する前記配線に、バンプを電気的に接続するバンプ接続工程と、半導体素子毎に対応するように、半導体素子封止体を個片化することにより、複数の半導体パッケージを一括して得る個片化工程とを有する。
[1−1]まず、上面に接着層102が設けられた平板状をなすダミー基板101を用意する。
さらに、接着層102を構成する樹脂組成物は、溶媒(溶剤)を含有していても良い。
[2−1]まず、エポキシ樹脂組成物を瞬時に下型キャビティ504内に供給することができるシャッター等の樹脂材料供給機構を備えた樹脂材料供給容器502上に、振動フィーダー501等の搬送手段を用いて顆粒状のエポキシ樹脂組成物503を一定量搬送し、これにより、顆粒状のエポキシ樹脂組成物503が入れられた樹脂材料供給容器502を用意する(図6参照。)。
顆粒密度(g/ml)=(Mp×ρw)/(Mw+Mp−Mt) ・・・(1)
ρw:測定時の温度における蒸留水の密度(g/ml)
Mw:蒸留水を満たし、さらに界面活性剤を数滴添加したピクノメータの質量(g)
Mp:試料の質量(g)
Mt:蒸留水と界面活性剤と試料をいれたピクノメータの質量(g)
なお、界面活性剤は蒸留水と試料の濡れを高め、気泡の巻き込みを極小にするために用いる。使用可能な界面活性剤は特に制限がなく、気泡の巻き込みがなくなるような材料を選択すればよい。
[4−1]まず、犠牲層38を加熱する。
[8−1]まず、シート材25’の半導体素子封止体270とは反対の面側に、シート材25’、第2の貫通孔251の内面、第2の貫通孔251から露出する電極パッドおよび導体柱28を覆うように一体的に、導電性を有するシード層を形成する。
このマスクの除去は、プラズマエッチング、リアクティブエッチング、ビームエッチング、光アシストエッチング等の物理的エッチング法、ウェットエッチング等の化学的エッチング法等のうち1種または2種以上を組み合わせて行うことができるが、具体的には、マスクをアルカリ現像液で膨潤・溶解し除去する方法が好ましく用いられる。
以上のような工程を経て、第2の貫通孔251内に導体ポスト24が形成される。
[9−1]まず、本実施形態では、前記工程[8−4]において残存させておいたシード層の配線23を形成しない領域にマスクを形成する。
ここで、本工程[9−2]において、配線23を電解メッキ法により形成する場合には、前述のように、シード層を除去することなくシート材25’に残存させていることから、このシード層を電極として用いて、電解メッキ法により配線23を形成することができる。
上記R3は、水酸基のアルカリ水溶液に対する溶解性を調節する目的で用いられる。
R2は、水酸基、カルボキシル基、−O−R3、−COOR3であり、それぞれ同じであっても異なっていても良い。R3が炭素数1〜15の有機基または窒素含有環状化合物である。R3の具体例としては、ホルミル基、メチル基、エチル基、プロピル基、イソプロピル基、ターシャリーブチル基、ターシャリーブトキシカルボニル基、フェニル基、ベンジル基、テトラヒドロフラニル基、テトラヒドロピラニル基等が挙げられる。
上記R3は、水酸基のアルカリ水溶液に対する溶解性を調節する目的で用いられる。
次に、上述したアルカリ可溶系樹脂組成物の他に、感光性を有する絶縁性材料として好適に用いられるものとして、ノルボルネン系樹脂組成物が挙げられる。このノルボルネン系樹脂組成物の中でも、特に、密着性、厚さ均一性および段差埋め込み性を顕著に発揮するものとして、環状オレフィンの重合体またはその水素添加物(A)および下記一般式(5)で示される構造を有する化合物(B)を含む樹脂組成物が好ましく用いられる。
以上のような工程を経て、複数の半導体パッケージ20が製造される。
次に、パッケージ20を製造する製造方法の第2実施形態ついて説明する。
また、このシート材25’は、前記工程[7]において、半導体素子封止体270の上側の面に配置されたシート材25’と同様のものを用いることができる。
以上のような工程を経て、半導体パッケージ20が製造される。
12、22 被覆部
121、221 開口部
13、23 配線
142 マスク
14、24 導体ポスト
15、25 インターポーザー
151、251 貫通孔
16、26 半導体素子
17、27 封止部
21 バンプ
25’ シート材
270、270’ 半導体素子封止体
28 導体柱
30 半導体装置
501 振動フィーダー
502 樹脂材料供給容器
503 エポキシ樹脂組成物
504 下型キャビティ
600 パッケージ
101、601 ダミー基板
102、602 接着層
610 封止体
611 バンプ
612 第2の被覆層
613 配線
614 導体ポスト
615 第1の被覆層
616 半導体素子
617 封止部
622 開口部
625 貫通孔
Claims (10)
- 少なくとも1つの電極パッドを有する複数の半導体素子と、導電性を有する複数の導体柱と、前記半導体素子および前記導体柱を封止する封止部とを有する半導体素子封止体の製造方法であって、
平板状をなすダミー基板を用意し、該ダミー基板上に、前記電極パッドが前記ダミー基板側となるように前記半導体素子を配置するとともに、加熱することで分解し気化する樹脂成分を含有する犠牲層を、前記導体柱を形成すべき位置に該導体柱の形状に対応して形成する半導体素子配置工程と、
前記半導体素子が配置され、かつ前記犠牲層が形成されている側の面に、前記ダミー基板と前記半導体素子と前記犠牲層とを覆うように封止して封止部を形成する封止部形成工程と、
前記封止部、前記半導体素子および前記犠牲層から前記ダミー基板を剥離させる剥離工程と、
前記犠牲層を、加熱することで前記樹脂成分を分解・気化させることにより除去して、前記封止部の前記導体柱を形成すべき位置に、第1の貫通孔を形成した後、該第1の貫通孔に前記導体柱を形成することにより、前記半導体素子封止体を得る導体柱形成工程と、
前記導体柱の双方の端部が露出するように、前記封止部の前記導体柱が露出していない側の面を研削および/または研磨する研削・研磨工程とを有することを特徴とする半導体素子封止体の製造方法。 - 前記半導体素子配置工程において、前記犠牲層は、前記樹脂成分と、活性エネルギー線の照射により活性種を発生する活性剤とを含有する樹脂組成物を含む液状材料を、前記ダミー基板上に供給し乾燥させて薄膜を形成する第1の工程と、
前記犠牲層を形成しない領域に位置する前記薄膜に、前記活性エネルギー線を照射することで、前記樹脂成分の50%重量減少温度を低下させる第2の工程と、
前記薄膜を加熱して、前記領域に位置する前記薄膜に含まれる前記樹脂成分を選択的に分解・気化させることで、前記領域に位置する前記薄膜を除去する第3の工程とを経ることにより形成される請求項1に記載の半導体素子封止体の製造方法。 - 前記封止部形成工程において、前記封止部は、顆粒状のエポキシ樹脂組成物を溶融させた状態で、前記ダミー基板、前記半導体素子および前記犠牲層を覆うように、前記半導体素子が配置され、かつ前記犠牲層が形成されている側の面に供給した後、この溶融状態のエポキシ樹脂組成物を圧縮成形することにより形成される請求項1または2に記載の半導体素子封止体の製造方法。
- 前記導体柱形成工程において、前記導体柱は、電解メッキ法により形成される請求項1ないし3のいずれかに記載の半導体素子封止体の製造方法。
- 複数の第2の貫通孔が形成されたシート材と、該シート材上に配置され少なくとも1つの電極パッドを有する複数の半導体素子と、前記シート材上に配置され導電性を有する複数の導体柱と、前記半導体素子および前記導体柱を封止する封止部とを有する半導体素子封止体の製造方法であって、
平板状をなすシート材を用意し、該シート材上に、前記電極パッドが前記シート材側となるように前記半導体素子を配置するとともに、加熱することで分解し気化する樹脂成分を含有する犠牲層を、前記導体柱を形成すべき位置に該導体柱の形状に対応して形成する半導体素子配置工程と、
前記半導体素子が配置され、かつ前記犠牲層が形成されている側の面に、前記シート材と前記半導体素子と前記犠牲層とを覆うように封止して封止部を形成する封止部形成工程と、
前記電極パッドおよび前記犠牲層に対応するように、前記シート材の厚さ方向に複数の第2の貫通孔を形成する貫通孔形成工程と、
前記犠牲層を、加熱することで前記樹脂成分を分解・気化させることにより除去して、前記封止部の前記導体柱を形成すべき位置に、第1の貫通孔を形成した後、該第1の貫通孔に前記導体柱を形成することにより、前記半導体素子封止体を得る導体柱形成工程と、
前記導体柱の双方の端部が露出するように、前記封止部の前記導体柱が露出していない側の面を研削および/または研磨する研削・研磨工程とを有することを特徴とする半導体素子封止体の製造方法。 - 請求項1ないし4のいずれかに記載の半導体素子封止体の製造方法により製造された半導体素子封止体と、厚さ方向に複数の第2の貫通孔が形成されたシート材とを用意し、各前記第2の貫通孔に前記電極パッドおよび前記導体柱が対応するように、前記半導体素子封止体に前記シート材を貼り合わせるシート材貼り合わせ工程と、
前記第2の貫通孔に導電性を有する導体ポストを形成する導体ポスト形成工程と、
前記シート材の前記半導体素子封止体とは反対の面側に、前記導体ポストに電気的に接続する配線を形成する配線形成工程と、
前記半導体素子封止体とは反対側の面に、前記配線の一部が露出するように、開口部を備える被覆部を形成する被覆部形成工程と、
前記開口部で露出する前記配線に、バンプを電気的に接続するバンプ接続工程と、
前記半導体素子毎に対応するように、前記半導体素子封止体を個片化することにより、複数の半導体パッケージを一括して得る個片化工程とを有することを特徴とする半導体パッケージの製造方法。 - 請求項5に記載の半導体素子封止体の製造方法により製造された半導体素子封止体を用意し、前記第2の貫通孔に導電性を有する導体ポストを形成する導体ポスト形成工程と、
前記シート材の前記半導体素子封止体とは反対の面側に、前記導体ポストに電気的に接続する配線を形成する配線形成工程と、
前記半導体素子封止体とは反対側の面に、前記配線の一部が露出するように、開口部を備える被覆部を形成する被覆部形成工程と、
前記開口部で露出する前記配線に、バンプを電気的に接続するバンプ接続工程と、
前記半導体素子毎に対応するように、前記半導体素子封止体を個片化することにより、複数の半導体パッケージを一括して得る個片化工程とを有することを特徴とする半導体パッケージの製造方法。 - 前記導体ポスト形成工程において、前記導体ポストは、電解メッキ法により形成される請求項6または7に記載の半導体パッケージの製造方法。
- 前記配線形成工程において、前記配線は、電解メッキ法により形成される請求項6ないし8のいずれかに記載の半導体パッケージの製造方法。
- 前記導体ポストと前記バンプとは、前記シート材の面方向において、異なる位置に形成される請求項6ないし9のいずれかに記載の半導体パッケージの製造方法。
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