WO2011061998A1 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- WO2011061998A1 WO2011061998A1 PCT/JP2010/067035 JP2010067035W WO2011061998A1 WO 2011061998 A1 WO2011061998 A1 WO 2011061998A1 JP 2010067035 W JP2010067035 W JP 2010067035W WO 2011061998 A1 WO2011061998 A1 WO 2011061998A1
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- pixel
- phase difference
- microlens
- difference detection
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- 238000003384 imaging method Methods 0.000 title claims abstract description 72
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
- G03B13/32—Means for focusing
- G03B13/34—Power focusing
- G03B13/36—Autofocus systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
Definitions
- the present invention relates to a solid-state imaging device that includes a plurality of imaging-dedicated pixels and a plurality of phase difference detection pixels and performs phase difference autofocus based on an image obtained from the phase difference detection pixels.
- Digital cameras that are equipped with solid-state imaging devices such as CCD image sensors and CMOS image sensors and generate digital images have become widespread.
- Many digital cameras have an autofocus (AF) function that automatically adjusts the focus of the taking lens, and a contrast detection method is widely adopted as the AF function.
- the contrast detection method has an advantage that the AF function can be realized at a relatively low cost because it is not necessary to separately provide a dedicated sensor for measuring the distance to the subject or a solid-state imaging device for AF.
- Patent Document 1 a convex portion and a convex portion are formed on the imaging surface of a solid-state imaging device, and an AF photoelectric conversion element is provided in the convex portion and the concave portion.
- a convex portion and a convex portion are formed on the imaging surface of a solid-state imaging device, and an AF photoelectric conversion element is provided in the convex portion and the concave portion.
- the moving range (search range) of the focus lens is narrowed, and the AF processing is speeded up.
- the moving range of the focus lens can be narrowed, but since the focus lens must be moved within the narrowed range, there is a limit to speeding up the AF processing.
- enhancement of functions and low price are being promoted, and it is desired to perform AF processing at higher speed without increasing the cost.
- Patent Document 2 proposes a solid-state imaging device for phase difference AF that can detect a focus by one photographing.
- the solid-state imaging device for phase difference AF has a plurality of first pixels in which microlenses are arranged with the optical axis shifted with respect to the center position of the light receiving surface of the photodiode (PD), and the center position of the light receiving surface of the PD. And a plurality of second pixels in which microlenses are arranged by shifting the optical axis by the same amount in the opposite direction to the first pixel.
- the first pixel and the second pixel have selectivity in the incident light angle according to the direction of displacement of the microlens.
- an imaging device such as a digital camera
- the imaging lens of the digital camera is focused on the image constituted by each first pixel and the image constituted by each second pixel.
- a shift occurs depending on the state.
- the shift direction and shift amount of each image correspond to the focus shift direction and shift amount of the photographing lens.
- Each image matches when the photographing lens is in focus, and the amount of shift increases as the focus is shifted. Therefore, in the solid-state imaging device for phase difference AF, by detecting the shift amount between the image formed by each first pixel and the image formed by each second pixel and the direction of the shift, A focus adjustment amount can be obtained.
- the solid-state imaging device for phase difference AF when used, it is not necessary to move the focus lens, and therefore, AF can be performed at a higher speed than the contrast detection type AF.
- AF can be performed at a higher speed than the contrast detection type AF.
- the solid-state imaging device for phase difference AF in addition to the phase difference detection pixel composed of the first pixel and the second pixel, an imaging dedicated pixel composed of a normal pixel is provided, and the phase difference AF is detected by the phase difference detection pixel. In this case, the subject is photographed with the photographing-dedicated pixels.
- JP 2004-361611 A Japanese Patent No. 2959142
- the imaging surface is configured by arranging the phase difference detection pixels and the photographing dedicated pixels, there is a problem in that the amount of light received by the photographing dedicated pixels is high at a location adjacent to the phase difference detection pixels. Since the micro lens of the phase difference detection pixel is small, a gap generated between the micro lenses is larger at a position where the phase difference detection pixel and the shooting dedicated pixel are adjacent to each other than at a position where the shooting dedicated pixels are adjacent to each other. The increase in the amount of light received by the imaging-dedicated pixel adjacent to the phase difference detection pixel is due to the fact that the PD of the imaging-dedicated pixel receives the light incident through this gap.
- the increase in the amount of light received by the photographing-dedicated pixels as described above appears as noise in the photographed image.
- correction processing it takes an extra time to form an image. For this reason, it is desired to configure the solid-state imaging device for phase difference AF so that a uniform amount of light is incident on the PD of each imaging-dedicated pixel.
- the present invention has been made in view of the above problems, and an imaging surface is configured by arranging phase difference detection pixels and shooting-dedicated pixels so that a substantially uniform amount of light enters the PD of each shooting-dedicated pixel.
- An object of the present invention is to provide a solid-state imaging device for phase difference AF that makes it possible.
- the present invention provides a plurality of phase difference detection pixels each having a microlens having an optical axis shifted in a predetermined direction with respect to the center of a light receiving surface of a photoelectric conversion element, and a photoelectric conversion element A microlens that is larger than the microlens of the phase difference detection pixel and is arranged so that the center of the light receiving surface and the optical axis substantially coincide, and the microlens arranged around the phase difference detection pixel is another And a plurality of photographing-dedicated pixels formed smaller than the microlens.
- the plurality of photographing-dedicated pixels have three or more types of microlenses, and the size of the microlens gradually decreases as the phase difference detection pixels are approached. .
- the micro lens of the phase difference detection pixel is formed as large as possible by making a part of an empty area generated by reducing the micro lens of the adjacent pixel dedicated for photographing.
- the present invention also provides a plurality of phase difference detection pixels having microlenses arranged with the optical axis shifted in a predetermined direction with respect to the center of the light receiving surface of the photoelectric conversion element, and the center of the light receiving surface of the photoelectric conversion element.
- a microlens larger than the microlens of the phase difference detection pixel, which is arranged so as to substantially coincide with the optical axis, and the height from the photoelectric conversion element of the microlens arranged around the phase difference detection pixel may be employed.
- a concave portion is formed on the lens forming surface on which each of the microlenses is formed, corresponding to the photographing-dedicated pixels arranged around the phase difference detection pixels, and the microlens is formed on the inner bottom surface of the concave portion. Accordingly, it is preferable that the height of the microlens of the imaging-dedicated pixel arranged around the phase difference detection pixel is lower than that of the phase difference detection pixel.
- the height of the microlens of the photographing-dedicated pixel is gradually reduced as it approaches the phase difference detection pixel. Is preferred.
- a part of the microlens of the phase difference detection pixel is intruded into a space generated by reducing the height of the microlens of the adjacent pixel dedicated for photographing.
- a convex portion is formed at a position corresponding to the phase difference detection pixel on the lens forming surface on which each microlens is formed, and by forming a microlens on the convex portion, the phase difference detection pixel of the phase difference detection pixel is formed.
- the microlens may be configured such that the height of the microlens is higher than that of the imaging-dedicated pixel.
- the present invention provides a plurality of photographing-dedicated pixels having microlenses arranged so that the center of the light receiving surface of the photoelectric conversion element and the optical axis substantially coincide with each other and light with respect to the center of the light receiving surface of the photoelectric conversion element.
- the microlens is smaller than the microlens of the image-capturing pixel and is arranged with the axis shifted in a predetermined direction, and the shape of the microlens has a skirt toward the boundary portion with the adjacent image-capturing pixel. It may be configured to include a plurality of phase difference detection pixels that are elongated non-spherical.
- the present invention provides a plurality of phase difference detection pixels having microlenses arranged with the optical axis shifted in a predetermined direction with respect to the center of the light receiving surface of the photoelectric conversion element, and the center of the light receiving surface of the photoelectric conversion element.
- the height of the photoelectric conversion element on the semiconductor substrate which is arranged so that the optical axis substantially coincides with the microlens larger than the microlens of the phase difference detection pixel, and is arranged around the phase difference detection pixel.
- a configuration may be provided that includes a plurality of photographing-dedicated pixels that are lower than the height of the photoelectric conversion element of the phase difference detection pixel.
- a concave portion is formed at a position corresponding to the imaging-dedicated pixels arranged around the phase difference detection pixel, and a photoelectric conversion element is formed on the inner bottom surface of the concave portion to thereby form the phase difference. It is preferable that the height of the photoelectric conversion element of the imaging-dedicated pixel arranged around the detection pixel is lower than the height of the photoelectric conversion element of the phase difference detection pixel.
- a convex portion is formed at a position corresponding to the phase difference detection pixel, and a photoelectric conversion element is formed on the convex portion to thereby increase the height of the photoelectric conversion element of the phase difference detection pixel.
- it may be configured to be higher than the height of the photoelectric conversion element of the photographing-dedicated pixel.
- the convex portion has an inclined surface formed so as to face the direction of the microlens of the phase difference detection pixel, and the photoelectric conversion element of the phase difference detection pixel is formed on the inclined surface.
- the imaging-dedicated pixel and the phase difference detection pixel have an inner lens below the microlens, and each inner lens is in accordance with the distance from the photoelectric conversion element so that the photoelectric conversion element is focused.
- the shape is preferably changed.
- the present invention also provides a plurality of phase difference detection pixels having microlenses arranged with the optical axis shifted in a predetermined direction with respect to the center of the light receiving surface of the photoelectric conversion element, and the center of the light receiving surface of the photoelectric conversion element.
- a photoelectric conversion element having a microlens larger than the microlens of the phase difference detection pixel arranged so as to substantially coincide with the optical axis, and arranged around the phase difference detection pixel is the phase difference detection pixel.
- a plurality of dedicated photographing pixels formed so as to be inclined so that the light receiving surface faces in the opposite direction.
- the microlenses for exclusive use of photographing arranged around the phase difference detection pixels are formed smaller than the microlenses of other pixels for exclusive use of photographing.
- the amount of light incident on the photoelectric conversion element from the microlens is reduced in the photographing-dedicated pixels around the phase difference detection pixels. Therefore, by adjusting the size of the microlens so that the amount of light from the microlens is reduced by the amount of light incident from the gap generated between the microlens of the photographing dedicated pixel and the microlens of the phase difference detection pixel, A substantially uniform amount of light can be incident on the photoelectric conversion element of each photographing-dedicated pixel.
- a CCD image sensor (solid-state imaging device) 10 includes a plurality of pixels 11, a plurality of vertical transfer paths (VCCD) 12, a horizontal transfer path (HCCD) 13, and a floating diffusion amplifier (FDA) 14.
- the pixels 11 are arranged at a predetermined pitch in the vertical direction and the horizontal direction, and accumulate charges corresponding to incident light.
- the VCCD 12 transfers the charge accumulated in each pixel 11 in the vertical direction.
- the HCCD 13 is connected to the end of each VCCD 12 and transfers the charges transferred from each VCCD 12 in the horizontal direction.
- the FDA 14 converts the charge transferred by the HCCD 13 into a voltage signal (imaging signal) and outputs it.
- An element isolation region 15 that electrically isolates each pixel 11 is provided between adjacent pixels 11 so as not to cause charge movement.
- the pixel 11 has a pixel arrangement (so-called honeycomb arrangement) in which a square lattice is rotated 45 degrees with respect to the horizontal direction and the vertical direction.
- the VCCD 12 and the element isolation region 15 meander in a sawtooth shape so as to be between the pixels 11.
- the VCCD 12 is connected to the pixel 11 via the readout gate 16. The electric charge accumulated in the pixel 11 is read out to the VCCD 12 through the read gate 16.
- the VCCD 12 is controlled by a four-phase transfer electrode (not shown) and transfers the charges read from each pixel 11 toward the HCCD 13 in the vertical direction.
- the VCCD 12 is provided for each of the two columns of the pixels 11 and is configured to read out charges from the pixels 11 provided on the left and right.
- the CCD image sensor 10 has four types of pixels, the first pixel 11a, the second pixel 11b, the third pixel 11c, and the fourth pixel 11d, as the pixel 11. These four types of pixels 11a to 11d are arranged in a predetermined pattern to constitute a pixel group 18.
- the pixel group 18 includes 16 pixels, 4 ⁇ 4, including 10 first pixels 11a, one second pixel 11b, one third pixel 11c, and four fourth pixels 11d. These are arranged in a rectangular grid.
- the CCD image sensor 10 forms an imaging surface by continuously arranging a plurality of the pixel groups 18. In FIG. 1 and FIG. 2, only one pixel group 18 is shown for convenience, but actually, a plurality of pixel groups 18 are provided adjacent to each other.
- the first pixel 11a includes a photodiode (PD) 20a that is a photoelectric conversion element that converts incident light into electric charge and accumulates it, and a micro lens 21a that condenses the light on the PD 20a.
- the other second to fourth pixels 11b, 11c, and 11d include PDs 20b, 20c, and 20d, and microlenses 21b, 21c, and 21d, respectively.
- Each of the PDs 20a to 20d is formed in a semiconductor substrate shape with substantially the same shape and the same configuration.
- Each of the microlenses 21a to 21d is formed in a substantially hemispherical shape.
- the first pixel 11a is a pixel that is used when displaying a through image or when forming an image during shooting.
- the micro lens 21a of the first pixel 11a is formed such that its optical axis coincides with the center of the light receiving surface of the PD 20a and has a substantially maximum diameter with respect to the rectangular region of the first pixel 11a. Yes.
- the second pixel 11b and the third pixel 11c are pixels that are used at the time of phase formation type autofocus and also at the time of image formation.
- One second pixel 11b and one third pixel 11c are provided in each pixel group 18, and are arranged adjacent to each other.
- the microlens 21b of the second pixel 11b is formed to be approximately half the size of the microlens 21a of the first pixel 11a, and its optical axis is shifted to the left by a predetermined amount with respect to the center of the light receiving surface of the PD 20b. ing.
- the microlens 21c of the third pixel 11c is formed to have substantially the same size as the microlens 21b of the second pixel 11b, and is arranged with the same amount of displacement in the opposite direction (right side) to the microlens 21b.
- the second pixel 11b and the third pixel 11c have selectivity in the angle of incident light. Specifically, in the second pixel 11b, since the micro lens 21b is shifted to the left side, the light entering from the right side does not enter the PD 20b, and the light entering from the left side enters the PD 20b. On the contrary, in the third pixel 11c, since the micro lens 21c is shifted to the right side, the light entering from the left side does not enter the PD 20c, and the light entering from the right side enters the PD 20c.
- this CCD image sensor 10 When this CCD image sensor 10 is used in an imaging device such as a digital camera, an image constituted by the imaging signal of the second pixel 11b provided in the imaging surface and an image constituted by the imaging signal of the third pixel 11c. Therefore, a shift (phase difference) occurs in the left-right direction in accordance with the focus state of the photographing lens that forms the subject image on the CCD image sensor 10. By detecting the shift amount of the image in which the shift has occurred and the direction of the shift, the focus adjustment amount of the photographing lens can be obtained.
- the phase difference type autofocus is described in detail in Japanese Patent No. 2959142.
- the fourth pixel 11d is a pixel used only for image formation like the first pixel 11a.
- the micro lens 21d of the fourth pixel 11d is arranged so that its optical axis coincides with the center of the light receiving surface of the PD 20d.
- the microlens 21d of the fourth pixel 11d is formed by adjusting the diameter so that the area (a value obtained by multiplying the diameter by the circumference) is approximately 5% smaller than the microlens 21a of the first pixel 11a. Yes.
- the diameter of the micro lens 21d of the fourth pixel 11d is slightly smaller than the diameter of the micro lens 21a of the first pixel 11a, and larger than the diameter of the micro lens 21b of the second pixel 11b and the micro lens 21c of the third pixel 11c.
- the fourth pixel 11d is disposed adjacent to the second pixel 11b or the third pixel 11c.
- the 4th pixel 11d is arrange
- the second pixel 11b since the microlens 21b is shifted to the left side and adjacent to the two left sides, the fourth pixel 11d is arranged to be adjacent to the two right sides.
- the third pixel 11c since the microlens 21c is shifted to the right side and adjacent to the two right sides, the fourth pixel 11d is arranged to be adjacent to the two left sides.
- the CCD image sensor 10 When an image is formed using the CCD image sensor 10 in an imaging device, all imaging signals of the pixels 11a to 11d are used.
- the imaging signal of the second pixel 11b and the imaging signal of the third pixel 11c are both signals compared to the imaging signals of the first pixel 11a and the fourth pixel 11d due to the small size of the micro lenses 21b and 21c. The value is small. For this reason, when an image is formed by the CCD image sensor 10, processing for correcting the imaging signals of the second pixel 11b and the third pixel 11c based on the imaging signals of the first pixel 11a and the fourth pixel 11d is performed. Is called.
- the CCD image sensor 10 is configured on an n-type semiconductor substrate 25.
- a p-well layer 26 is formed on the surface of the n-type semiconductor substrate 25.
- n-type layers 27a to 27d constituting the PDs 20a to 20d an n-type layer 28 constituting the VCCD 12, a p + layer 29 constituting the element isolation region 15, the PDs 20a to 20d, and the VCCD 12 are provided.
- a p + layer 30 to be separated is formed.
- the CCD image sensor 10 is formed on the n-type semiconductor substrate 25 using a known technique such as vapor deposition, doping, photolithography, etching, or the like.
- the cutting line X1-Y1 cuts each part so as to pass through the centers of the microlenses 21a to 21d.
- PDs 20a to 20d are each composed of a pn junction between a p-well layer 26 and n-type layers 27a to 27d.
- the PDs 20a to 20d generate electron-hole pairs according to the incident light. Of the generated electron-hole pairs, electrons are accumulated in the n-type layers 27a to 27d.
- the n-type layers 27a to 27d are separated from the n-type layers 27a to 27d of the adjacent pixels via the p + layer 29.
- the n-type layers 27a to 27d are separated from the n-type layer 28 constituting the VCCD 12 via the p + layer 30. This prevents charges accumulated in the n-type layers 27a to 27d from unintentionally moving to other regions.
- the VCCD 12 is composed of an n-type layer 28 and a transfer electrode 31 provided on the n-type layer 28.
- the n-type layers 27 a to 27 d constituting the PDs 20 a to 20 d and the n-type layer 28 constituting the VCCD 12 are separated by the p-well layer 26.
- the read gate 16 includes a part of the p-well layer 26 between the n-type layers 27a to 27d and the n-type layer 28, and a transfer electrode 32 provided thereon.
- polysilicon is used for the transfer electrodes 31 and 32.
- the charges accumulated in the n-type layers 27a to 27d are transferred to the n-type layer 28 by applying a voltage to the transfer electrode 32 and changing the potential of the p-well layer 26.
- the charges transferred to the n-type layer 28 are transferred in the cross-sectional direction (direction perpendicular to the paper surface) according to the voltage applied to the transfer electrode 31 at a predetermined timing. As a result, the charges accumulated in the PDs 20a to 20d are transferred toward the HCCD 13.
- the element isolation region 15 forms a potential barrier against the charges accumulated in the n-type layers 27a to 27d and prevents the charges from moving between the adjacent PDs 20a to 20d.
- a light shielding film 33 is formed so as to cover the entire surface of the p well layer 26.
- the light shielding film 33 is provided with a plurality of openings 33a for exposing the n-type layers 27a to 27d.
- the light shielding film 33 prevents extra light from entering the portions other than the PDs 20a to 20d.
- a planarization layer 34 is formed so as to cover the light shielding film 33, and microlenses 21 a to 21 d are provided on the planarization layer 34.
- the planarization layer 34 fills the unevenness on the substrate caused by the transfer electrodes 31 and 32, and constitutes a planar lens forming surface 34a for forming the microlenses 21a to 21d.
- the planarizing layer 34 is made of a translucent material such as BPSG.
- the microlenses 21a to 21d are formed on the lens forming surface 34a with the positions and sizes of the PDs 20a to 20d adjusted as described above. Further, since the microlenses 21a to 21d are substantially hemispherical, the height from the lens forming surface 34a varies depending on the diameter of each.
- the gap between the microlens 21b and the microlens 21d is large at a location where the second pixel 11b and the fourth pixel 11d are adjacent to each other.
- a gap between the microlens 21c and the microlens 21d is also large at a location where the third pixel 11c and the fourth pixel 11d are adjacent to each other. Therefore, when the microlens 21d of the fourth pixel 11d is formed in the same size as the microlens 21a of the first pixel 11a, the fourth pixel 11d is more affected by the light incident from the gap than the first pixel 11a.
- the amount of received light also increases (specifically, the amount of received light increases by about 5%).
- the microlens 21d of the fourth pixel 11d is formed to be smaller than the microlens 21a of the first pixel 11a (specifically, the area is about 5% smaller).
- the amount of light incident on the PD 20d from the microlens 21d is relatively reduced by the amount of light incident from the gap, and the PD 20a of each of the first pixel 11a and the fourth pixel 11d, which are dedicated pixels for photographing, Light having a substantially uniform amount of light enters 20d.
- the microlens 21d of the fourth pixel 11d is formed so that the area is about 5% smaller than the microlens 21a of the first pixel 11a.
- the reduction of the microlens 21d with respect to the microlens 21a is performed.
- the rate is not limited to this, and may be appropriately determined according to the amount of light incident from the gap.
- the reduction ratio of the microlens 21d of the fourth pixel 11d with respect to the microlens 21a of the first pixel 11a is all the same, but the direction adjacent to the second pixel 11b or the third pixel 11c, If the amount of light incident from the gap varies depending on the shape of the structure (such as VCCD 12) formed on the n-type semiconductor substrate 25, the reduction ratio of each microlens 21d is appropriately adjusted according to the amount of light. do it. Furthermore, in the present embodiment, the fourth pixel 11d is disposed so as to be adjacent to the second pixel 11b or the third pixel 11c. 11d may be arranged.
- the pixel group 18 is composed of four types of pixels, the first pixel 11a to the fourth pixel 11d.
- the pixel group 50 is composed of five types of pixels in which the fifth pixel 11e is added to the first pixel 11a to the fourth pixel 11d.
- the seven first pixels 11a adjacent to the fourth pixel 11d are replaced with the fifth pixels 11e. Is.
- the fifth pixel 11e is used together with the first pixel 11a and the fourth pixel 11d for image formation during shooting.
- the fifth pixel 11e includes a PD 20e and a micro lens 21e.
- the micro lens 21e of the fifth pixel 11e is formed in a substantially hemispherical shape, and is arranged so that the optical axis thereof coincides with the center of the light receiving surface of the PD 21e.
- the diameter of the micro lens 21e of the fifth pixel 11e is smaller than the diameter of the micro lens 21a of the first pixel 11a and larger than the diameter of the micro lens 21d of the fourth pixel 11d.
- the diameter of the micro lens 21d of the fourth pixel 11d is set so that the area is about 5% smaller than the micro lens 21a of the first pixel 11a
- the diameter of the micro lens 21e of the fifth pixel 11e is The area is set to be about 2 to 3% smaller than the microlens 21a of one pixel 11a.
- the first pixel 11a since the first pixel 11a is disposed adjacent to the fourth pixel 11d, due to the influence of light incident from the gap caused by the difference in diameter between the microlens 21a and the microlens 21d, There is a concern that the amount of light received by the first pixel 11a adjacent to the fourth pixel 11d is increased.
- a microlens between the first pixel 11a and the fourth pixel 11d is smaller than the microlens 21a of the first pixel 11a and larger than the microlens 21d of the fourth pixel 11d.
- the diameter of the microlens of the pixels around the phase difference detection pixels (the second pixel 11b and the third pixel 11c) is gradually reduced as it approaches the phase difference detection pixel, it is uniform. A light amount of light is incident on the PD of the photographing-dedicated pixel, and an image with less noise is obtained.
- the size of the microlenses of the pixels around the second pixel 11b and the third pixel 11c is changed in two stages, but may be three or more stages.
- the specific number of steps may be appropriately determined according to the amount of light incident from the gap, the configuration of the pixel group, and the like.
- the pixel group 52 of the present embodiment is composed of five types of pixels, a first pixel 11a to a fifth pixel 11e, as in the pixel group 50 of the second embodiment.
- the first pixel 11a, the fourth pixel 11d, and the fifth pixel 11e, which are dedicated imaging pixels, have the same configuration as that of the second embodiment.
- the second pixel 11b has a microlens 53 having a larger diameter than the microlens 21b of the first and second embodiments.
- the microlens 53 is formed so that a part thereof enters the empty area of the adjacent third pixel 11c and the empty area of the adjacent fifth pixel 11e.
- the vacant area is an area where no microlens is formed on the lens forming surface 34a of the pixel.
- the third pixel 11c has a microlens 54 having a larger diameter than the microlens 21c of the first and second embodiments.
- the microlens 54 is formed so that a part thereof enters the empty area of the adjacent second pixel 11b and the empty area of the adjacent fifth pixel 11e.
- the second pixel 11b and the third pixel 11c which are phase difference detection pixels, need to shift the centers of the light receiving surfaces of the PDs 20b and 20c and the optical axes of the micro lenses 53 and 54, respectively, the micro lenses 53 and 54 are photographed. It must be smaller than that of dedicated pixels. For this reason, the second pixel 11b and the third pixel 11c have a lower amount of received light than the dedicated photographing pixels, and form an image composed of the imaging signals of these pixels with the execution of phase difference autofocus. In doing so, there arises a problem that even if image processing is performed, noise remains or false colors are generated.
- the diameters of the microlenses 53 and 54 of the second pixel 11b and the third pixel 11c are made as large as possible by partially entering the vacant areas of adjacent pixels. As a result, the amount of light received by the second pixel 11b and the third pixel 11c increases, and the occurrence of noise and false colors is suppressed.
- the pixel group 60 of the present embodiment has four types of pixels, a first pixel 61a, a second pixel 61b, a third pixel 61c, and a fourth pixel 61d, as in the pixel group 18 of the first embodiment. It consists of pixels.
- the pixels 61a to 61d include PDs 62a to 62d and micro lenses 63a to 63d, respectively.
- the first pixel 61a to the third pixel 61c have the same configuration as the first pixel 11a to the third pixel 11c of the first embodiment.
- the fourth pixel 61d has a microlens 63d having substantially the same shape and size as the microlens 63a of the first pixel 61a.
- a concave portion 64b is formed on the lens forming surface 64a of the planarizing layer 64 at a location corresponding to the fourth pixel 61d.
- the microlens 63d of the fourth pixel 61d is formed on the inner bottom surface of the concave portion 64b, and the microlens 63a to 63c of the first pixel 61a to the third pixel 61c formed on the lens forming surface 64a is closer to the PD 62d.
- the height of is low.
- the micro lens 63a of the first pixel 61a has a condensing characteristic such that the condensed light is appropriately incident on the PD 62a at a position on the lens forming surface 64a.
- the microlens 63d of the fourth pixel 61d is formed at a position lower than the lens forming surface 64a despite having the same light collection characteristics as the microlens 63a of the first pixel 61a.
- the emitted light does not enter the PD 62d (so-called vignetting occurs), and the amount of light entering the PD 62d decreases.
- the amount of light incident on the PD 62d is reduced by the amount of light incident from the gap generated between the microlens 63b and the microlens 63d or the gap generated between the microlens 63c and the microlens 63d.
- the depth of the recess 64b that is, the height of the microlens 63d from the PD 62d, the same effect as in the first embodiment can be obtained.
- the pixel group 70 of the present embodiment is composed of five types of pixels, a first pixel 71a to a fifth pixel 71e, like the pixel group 50 of the second embodiment.
- the pixels 71a to 71e include PDs 72a to 72e and micro lenses 73a to 73e, respectively.
- the first pixel 71a to the fourth pixel 71d have the same configuration as the first pixel 61a to the fourth pixel 61d of the fourth embodiment.
- the fifth pixel 71e has microlenses 73e having substantially the same shape and size as the microlenses 73a and 73d of the first pixel 71a and the fourth pixel 71d.
- a first recess 74b is formed at a location corresponding to the fourth pixel 71d
- a second recess 74c is formed at a location corresponding to the fifth pixel 71e.
- the second recess 74c is formed shallower than the first recess 74b.
- the micro lens 73d of the fourth pixel 71d is formed on the inner bottom surface of the first recess 74b.
- the micro lens 73e of the fifth pixel 71e is formed on the inner bottom surface of the second recess 74c.
- the micro lens 63d of the fourth pixel 61d is formed at a low position.
- the height of the micro lens 73d of the fourth pixel 71d and the micro lens 73e of the fifth pixel 71e is increased. Change and lower. Specifically, the heights of the microlenses of the pixels around the phase difference detection pixels (the second pixel 71b and the third pixel 71c) are gradually reduced as they approach the phase difference detection pixel.
- a uniform amount of light is incident on the PD of the photographing-dedicated pixel, and an image with less noise is obtained.
- the pixel group 75 of the present embodiment is composed of five types of pixels, a first pixel 71a to a fifth pixel 71e, as in the pixel group 70 of the fifth embodiment.
- the first pixel 71a, the fourth pixel 71d, and the fifth pixel 71e which are dedicated imaging pixels, have the same configuration as that of the fifth embodiment.
- the second pixel 71b has a microlens 76 having a diameter larger than that of the microlens 73b of the fifth embodiment.
- the microlens 76 partially enters the empty area of the adjacent third pixel 71c, partially enters the area of the adjacent fifth pixel 71e, and part of the microlens 76 and the microlens 73e of the fifth pixel 71e are light. It arrange
- the microlens 73e of the fifth pixel 71e is formed on the inner bottom surface of the second recess 74c. Since the microlens 73e of the fifth pixel 71e is lower in height from the PD 72e than the microlens 76 of the second pixel 71b, a space is generated on the side of the microlens 76 by the curvature of the microlens 73e. In the present embodiment, the diameter of the microlens 76 is made as large as possible by inserting a part of the microlens 76 into this space.
- the third pixel 71c has a microlens 77 having a diameter larger than that of the microlens 73c of the fifth embodiment.
- the microlens 77 partially enters the empty area of the adjacent second pixel 71b, partially enters the area of the adjacent fifth pixel 71e, and part of the microlens 77 and the microlens 73e of the fifth pixel 71e are light. It arrange
- the amount of light received by the second pixel 71b and the third pixel 71c is increased as in the third embodiment, and the generation of noise and false colors is suppressed. It is done.
- the pixel group 80 of the present embodiment includes three types of pixels: a first pixel 81 a that is a photographing-dedicated pixel, and a second pixel 81 b and a third pixel 81 c that are phase difference detection pixels.
- the pixels 81a to 81c include PDs 82a to 82c and microlenses 83a to 83c, respectively, which are configured in the same manner as in the above embodiments.
- convex portions 85 are formed at locations corresponding to the second pixels 81b and the third pixels 81c.
- the convex portion 85 is formed in a substantially square frustum shape in which the rectangular regions of the second pixel 81b and the third pixel 81c are protruded by a predetermined amount from the lens forming surface 84a.
- an inclined surface 85a that is inclined toward a boundary portion with the adjacent first pixel 81a is formed.
- the microlenses 83b and 83c of the second pixel 81b and the third pixel 81c are formed on the convex portion 85, and the height from the PDs 82b and 82c is higher than the microlens 83a of the first pixel 81a.
- the incident angle range of light incident on the PD 82a of the first pixel 81a through the gap with the adjacent first pixel 81a is narrowed. This makes it difficult for light to enter from the gap between the microlens 83a and the microlens 83b and the gap between the microlens 83a and the microlens 83c, and the light reception of the first pixel 81a caused by the light incident from the gap.
- the increase in quantity is reduced.
- the said incident angle range is made narrower by making the outer periphery of the convex part 85 into the inclined surface 85a.
- the microlens is directed toward a gap formed between the phase difference detection pixel and the microlens. Due to the widening, there are factors such as an increase in size and an increase in the amount of received light as compared with other microlenses for photographing only.
- the inclined surface 85a of the convex portion 85 acts as a wall to form each microlens 83a of the first pixel 81a that is a photographing-dedicated pixel
- the second pixel 81b and the second pixel 81b The microlens 83a of the first pixel 81a adjacent to the three pixels 81c is prevented from spreading and becoming larger, and an increase in the amount of light caused by manufacturing is prevented.
- the inclination angle of the inclined surface 85a may be an arbitrary angle considering the moldability of the microlens 83a, the convex portion 85, and the like.
- the inclined surface 85a may be a vertical surface that is substantially perpendicular to the lens forming surface 84a.
- the pixel group 90 of the present embodiment includes three types of pixels: a first pixel 91a that is a photographing-dedicated pixel, and a second pixel 91b and a third pixel 91c that are phase difference detection pixels.
- the first pixel 91a includes a PD 92a and a micro lens 93a configured in the same manner as in the above embodiments.
- the second pixel 91b and the third pixel 91c include PDs 92b and 92c and micro lenses 93b and 93c, respectively.
- the PDs 92b and 92c are configured in the same manner as in the above embodiments.
- the microlens 93b of the second pixel 91b is shifted by a predetermined amount to the left with respect to the center of the light receiving surface of the PD 92b.
- the skirt in contact with the surface 34a is aspherical extending toward the boundary with the adjacent first pixel 91a.
- the micro lens 93c of the third pixel 91c is shifted from the center of the light receiving surface of the PD 92c by a predetermined amount to the right side with respect to the center of the light receiving surface of the PD 92c. It is a non-spherical shape extending toward the boundary part.
- the micro lenses 93b and 93c non-spherical, it is possible to prevent a gap from being formed between the adjacent micro lenses 93a. Therefore, in the present embodiment, the light incident from the gap is not received, or the microlens 93a is increased in size at the time of lens molding, so that the received light amount of the adjacent first pixel 91a does not increase. Furthermore, since the size of the micro lenses 93b and 93c is increased by the skirt portion, the amount of light received by the second pixel 91b and the third pixel 91c increases.
- a method for forming the non-spherical microlens for example, a method described in JP-A-2006-049721 can be used.
- the pixel group 100 of the present embodiment includes four types of pixels, a first pixel 101a, a second pixel 101b, a third pixel 101c, and a fourth pixel 101d.
- the pixels 101a to 101d include PDs 102a to 102d and micro lenses 103a to 103d, respectively.
- the micro lenses 103a to 103d have the same configuration as the micro lenses 63a to 63d of the fourth embodiment.
- a recess 105 is formed on the surface 104a of the p-well layer 104 at a location corresponding to the fourth pixel 101d. As shown in FIG. 15, the recess 105 is formed by etching the surface 104a of the p-well layer 104 using a known lithography technique or etching technique.
- the PDs 102a to 102d are formed on the surface 104a of the p-well layer 104.
- the PD 102 d is formed on the inner bottom surface of the recess 105.
- the PD 102d has a lower height on the n-type semiconductor substrate 25 than the other PDs 102a to 102c.
- the VCCD 12 and the readout gate 16 corresponding to the PD 102d are also formed.
- Each of these portions is formed by forming a recess 105 in the p-well layer 104, and then using n-type layers 27a to 27d, 28 and p + layers 29, 30, 106, It is configured by forming 107.
- the p + layers 106 and 107 that prevent the movement of charges accumulated in the PD 102d are formed deeper than the p + layers 29 and 30 by the amount of the recess 105.
- the light shielding film 108 having a plurality of openings 108a that covers the transfer electrodes 31 and 32 and exposes the n-type layers 27a to 27d is formed on the surface 104a of the p-well layer 104. It is formed.
- the transfer electrode provided on the surface portion 104a of the p-well layer 104 in the vicinity of the edge portion of the recess 105 and in the vicinity of the edge.
- Structures such as 31, 32 and the light-shielding film 108 block light incident from the gap formed between the microlens 103b and the microlens 103d or the gap formed between the microlens 103c and the microlens 103d. It becomes difficult to enter.
- the amount of light received by the fourth pixel 101d is prevented from increasing due to the light incident from the gap, and the PDs 102a and 102d of the first pixel 101a and the fourth pixel 101d, which are dedicated pixels for shooting, are substantially uniform. A large amount of light is incident.
- the pixel group 110 of the present embodiment includes three types of pixels, a first pixel 111a, a second pixel 111b, and a third pixel 111c.
- the pixels 111a to 111c include PDs 112a to 112c and micro lenses 113a to 113c, respectively.
- the microlenses 113a to 113c are configured in the same manner as in the above embodiments.
- convex portions 115 are formed at locations corresponding to the second pixel 111b and the third pixel 111c.
- the projection 115 is formed by etching the surface 114a of the p-well layer 114 using a known lithography technique or etching technique.
- the PD 112a is formed on the surface 114a of the p-well layer 114.
- the PDs 112 b and 112 c are formed on the convex portion 115. Accordingly, the PDs 112b and 112c are higher on the n-type semiconductor substrate 25 than the PD 112a.
- the VCCD 12 and the readout gate 16 corresponding to the PDs 112b and 112c are also formed on the convex portion 115.
- the n-type layers 27a to 27c and 28 and the p + layers 29, 30, and 116 are formed at predetermined positions using a known lithography technique or a doping technique. It is comprised by forming.
- the p + layer 116 that partitions the PDs 112b and 112c and the adjacent PD 112a is formed deeper than the p + layer 30 by the amount of the convex portion 115.
- the light shielding film 117 having a plurality of openings 117a that covers the transfer electrodes 31 and 32 and exposes the n-type layers 27a to 27c is formed on the surface 114a of the p-well layer 114. It is formed.
- the corners of the convex portion 115 and the structures such as the transfer electrodes 31 and 32 and the light shielding film 117 provided close to the corners. Therefore, light incident from the gap generated between the microlens 113a and the microlens 113b or the gap generated between the microlens 113a and the microlens 113c is blocked, and is difficult to enter the adjacent PD 112a.
- the amount of light received by the adjacent first pixels 111a is prevented from increasing due to the light incident from the gap, and light having a substantially uniform light amount is incident on each PD 112a of the first pixel 111a, which is a photographing-dedicated pixel.
- the PDs 112b and 112c approach the microlenses 113b and 113c, so that the occurrence of vignetting is suppressed. This increases the amount of light received by the second pixel 111b and the third pixel 111c.
- the inner lenses 118a to 118c are all formed in the same shape, a focus shift occurs in one of the first pixel 111a, the second pixel 111b, and the third pixel 111c due to the difference in height of the PDs 112a to 112c. It is conceivable that the light receiving efficiency of the pixel deteriorates.
- the shape of the inner lens 118a and the shape of the inner lenses 118b and 118c are changed according to the height of the PDs 112a to 112c, and the focal points of the inner lenses 118a to 118c are appropriately adjusted with respect to the PDs 112a to 112c. Match. As a result, the deterioration of the light receiving efficiency due to the focus shift is prevented.
- the pixel group 120 of the present embodiment includes four types of pixels: a first pixel 121a, a second pixel 121b, a third pixel 121c, and a fourth pixel 121d.
- the pixels 121a to 121d include PDs 122a to 122d and micro lenses 123a to 123d, respectively.
- the micro lenses 123a to 123d have the same configuration as the micro lenses 103a to 103d of the ninth embodiment.
- a convex portion 125 is formed on the surface 124a of the p-well layer 124 at a location corresponding to the fourth pixel 121d.
- the convex portion 125 is formed in a prismatic shape having a substantially trapezoidal cross section, and has an inclined surface 125 a inclined at a predetermined angle with respect to the surface 124 a of the p-well layer 124.
- the convex part 125 is formed so that the inclined surface 125a faces in the opposite direction to the adjacent second pixel 121b or third pixel 121c.
- the convex part 125 having such an inclined surface 125a is, for example, a gray scale lithography technique for controlling the amount of light reaching the photosensitive material by changing the amount of transmitted ultraviolet light by using a photomask (gray scale mask) having light and shade. Can be used.
- a photosensitive material having a shape corresponding to the convex portion 125 is formed on the p-well layer 124 by gray scale lithography. Thereafter, anisotropic etching is performed on the p-well layer 124 to transfer the shape of the photosensitive material to the p-well layer 124. Thereby, the convex part 125 having the inclined surface 125 a is formed on the surface 124 a of the p-well layer 124.
- the PDs 122a to 122d are formed on the surface 124a of the p-well layer 124.
- the PD 122d is formed on the inclined surface 125a of the convex portion 125.
- the PD 122d is inclined such that the light receiving surface faces in the opposite direction to the adjacent second pixel 121b or third pixel 121c.
- the VCCD 12 corresponding to the PD 122d and the readout gate 16 are also formed.
- the n-type layers 27a to 27d, 28 and the p + layers 29, 30, 126 are formed at predetermined positions by using a well-known lithography technique or doping technique. It is comprised by forming.
- the p + layer 126 that partitions the PD 122b and PD 122d and the PD 122c and PD 122d is formed deeper than the p + layer 30 by the amount of the convex portion 125.
- the surface 124a of the p-well layer 124 has a plurality of openings 127a covering the transfer electrodes 31 and 32 and exposing each of the n-type layers 27a to 27d, as in the above embodiments. 127 is formed.
- the amount of light received by the fourth pixel 121d is prevented from increasing due to light incident from the gap, and the PDs 122a and 122d of the first pixel 121a and the fourth pixel 121d, which are dedicated pixels for shooting, are substantially uniform. A quantity of light is incident.
- the angle of the inclined surface 125a with respect to the surface 124a of the p-well layer 124 is larger than the maximum value of the angle of light incident from the gap with respect to the lens forming surface 34a (when the angle is parallel to the lens forming surface 34a, 0 degree). Increase the angle. By so doing, it is possible to reliably prevent light from entering the PD 122d from the gap.
- the pixel group 130 of the present embodiment includes three types of pixels: a first pixel 131a, a second pixel 131b, and a third pixel 131c.
- the pixels 131a to 131c include PDs 132a to 132c and microlenses 133a to 133c, respectively.
- the microlenses 133a to 133c are configured in the same manner as in the above embodiments.
- a convex portion 135 is formed at a location corresponding to the second pixel 131b, and a convex portion 136 is formed at a location corresponding to the third pixel 131c.
- the convex portions 135 and 136 are formed in a prismatic shape having a substantially trapezoidal cross section, and have inclined surfaces 135a and 136a inclined at a predetermined angle with respect to the surface 134a of the p-well layer 134, respectively.
- the convex portion 135 is formed such that the inclined surface 135a faces in the direction of the micro lens 133b of the corresponding second pixel 131b.
- the convex part 136 is formed so that the inclined surface 136a faces in the direction of the micro lens 133c of the corresponding third pixel 131c.
- the convex portions 135 and 136 can be formed using a gray scale lithography technique, similarly to the convex portion 125 of the eleventh embodiment.
- the PD 132a is formed on the surface 134a of the p-well layer 134.
- the PD 132b is formed on the inclined surface 135a of the convex portion 135.
- the PD 132c is formed on the inclined surface 136a of the convex portion 136. Accordingly, the PDs 132b and 132c are tilted so that the light receiving surfaces are directed in the direction of the micro lenses 133b and 133c of the pixels 131b and 131c.
- the VCCD 12 and the readout gate 16 corresponding to the PDs 132b and 132c are also formed on the convex portions 135 and 136. Each of these portions is formed by forming the projections 135 and 136 in the p-well layer 134, and then using the well-known lithography technique or doping technique or the like, the n-type layers 27a to 27d and 28, and the p + layer 29, 30 and 137 are formed.
- the p + layer 137 that partitions the PD 132a and PD 132b and the PD 132b and PD 132c is formed deeper than the p + layer 30 by the amount of the convex portions 135 and 136.
- the surface 134a of the p-well layer 134 covers the transfer electrodes 31 and 32 and has a plurality of openings 138a exposing each of the n-type layers 27a to 27d as in the above embodiments. Is formed.
- the PDs 132b and 132c are formed on the inclined surfaces 135a and 136a of the convex portions 135 and 136, the corner portions of the convex portions 135 and 136 and the transfer electrode 31 provided close to the corners. , 32 and the light-shielding film 138, the incident light is blocked by a gap generated between the microlens 133 a and the microlens 133 b or a gap generated between the microlens 133 a and the microlens 133 c and adjacent to each other. It becomes difficult to enter the PD 132a.
- the amount of light received by the adjacent first pixels 131a is prevented from increasing due to light incident from the gap, and light having a substantially uniform light amount is incident on each PD 132a of the first pixel 131a that is a photographing-dedicated pixel. .
- the PDs 132b and 132c are formed to be inclined as described above, the incident angle of the light from the microlenses 133b and 133c with respect to the normal of the light receiving surface is reduced, and the light received by the microlenses 133b and 133c is received. Efficiency is improved. Thereby, in this embodiment, the light reception amount of the 2nd pixel 131b and the 3rd pixel 131c increases.
- a pixel group composed of 16 pixels arranged in a 4 ⁇ 4 rectangular grid is illustrated, but the number of pixels included in the pixel group and the arrangement of the pixels are as described above. However, the number and arrangement of the pixels may be changed as appropriate.
- the second pixel and the third pixel that are phase difference detection pixels are arranged adjacent to each other. However, the second pixel and the third pixel do not necessarily have to be adjacent to each other.
- the CCD image sensor 10 in which the pixels are arranged in the honeycomb is illustrated.
- the present invention is not limited to this. Is possible.
- the present invention can also be applied to other types of solid-state imaging devices such as CMOS image sensors.
- the solid-state imaging device is appropriately combined with each of the above embodiments, for example, the second lens and the third pixel microlenses are formed in an aspherical shape, and the PD height of the second pixel and the third pixel is further increased. May be configured.
- CCD image sensor solid-state imaging device
- 11 pixel 11a first pixel (photographing only pixel) 11b
- Second pixel 11c 3rd pixel (phase difference detection pixel) 11d 4th pixel (photographing only pixel) 18 pixel group 20a, 20b, 20c, 20d PD (photoelectric conversion element) 21a, 21b, 21c, 21d
- PD photoelectric conversion element
- Micro lens 64b Concave portion 85 Convex portion 105 Concave portion 115 Convex portion 118a, 118b, 118c Inner lens 125 Convex portion 125a Inclined surface 135, 136 Convex portion 135a, 136a Inclined surface
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Abstract
Description
図1において、CCDイメージセンサ(固体撮像装置)10は、複数の画素11、複数の垂直転送路(VCCD)12、水平転送路(HCCD)13、及びフローティングディフュージョンアンプ(FDA)14からなる。画素11は、垂直方向及び水平方向に所定のピッチで配列され、入射光に応じた電荷を蓄積する。VCCD12は、各画素11が蓄積した電荷を垂直方向に転送する。HCCD13は、各VCCD12の末端に接続され、各VCCD12から転送された電荷を水平方向に転送する。FDA14は、HCCD13によって転送された電荷を電圧信号(撮像信号)に変換して出力する。隣接する画素11間には、電荷の移動が起こらないように各画素11を電気的に分離する素子分離領域15が設けられている。
次に、本発明の第2の実施形態について説明する。なお、上記第1の実施形態と機能・構成上同一のものについては、同符号を付し、詳細な説明を省略する。上記第1の実施形態では、第1画素11a~第4画素11dの4種類の画素で画素群18を構成した。これに対して、本実施形態では、図4に示すように、第1画素11a~第4画素11dに第5画素11eを加えた5種類の画素で画素群50を構成する。画素群50は、上記第1の実施形態の画素群18に含まれる10個の第1画素11aのうち、第4画素11dに隣接する7個の第1画素11aを第5画素11eに置き換えたものである。
次に、本発明の第3の実施形態について説明する。図5において、本実施形態の画素群52は、上記第2の実施形態の画素群50と同様に、第1画素11a~第5画素11eの5種類の画素で構成されている。これらのうち、撮影専用画素である第1画素11a、第4画素11d、第5画素11eは、上記第2の実施形態と同一構成である。
次に、本発明の第4の実施形態について説明する。図6において、本実施形態の画素群60は、上記第1の実施形態の画素群18と同様に、第1画素61a、第2画素61b、第3画素61c、第4画素61dの4種類の画素で構成されている。画素61a~61dは、それぞれPD62a~62dと、マイクロレンズ63a~63dとを備える。これらの画素61a~61dのうち、第1画素61a~第3画素61cは、上記第1の実施形態の第1画素11a~第3画素11cと同一構成である。
次に、本発明の第5の実施形態について説明する。図8において、本実施形態の画素群70は、上記第2の実施形態の画素群50と同様に、第1画素71a~第5画素71eの5種類の画素で構成されている。画素71a~71eは、それぞれPD72a~72eと、マイクロレンズ73a~73eとを備える。これらの各画素71a~71eのうち、第1画素71a~第4画素71dは、上記第4の実施形態の第1画素61a~第4画素61dと同一構成である。第5画素71eは、第1画素71a及び第4画素71dの各マイクロレンズ73a、73dと略同一形状かつ略同一サイズのマイクロレンズ73eを有する。
次に、本発明の第6の実施形態について説明する。図9において、本実施形態の画素群75は、上記第5の実施形態の画素群70と同様に、第1画素71a~第5画素71eの5種類の画素で構成されている。これらのうち、撮影専用画素である第1画素71a、第4画素71d、第5画素71eは、上記第5の実施形態と同一構成である。
次に、本発明の第7の実施形態について説明する。図11において、本実施形態の画素群80は、撮影専用画素である第1画素81aと、位相差検出画素である第2画素81b及び第3画素81cとの3種類の画素で構成されている。画素81a~81cは、それぞれ上記各実施形態と同様に構成された、PD82a~82cと、マイクロレンズ83a~83cと備える。
次に、本発明の第8の実施形態について説明する。図12において、本実施形態の画素群90は、撮影専用画素である第1画素91aと、位相差検出画素である第2画素91b、第3画素91cとの3種類の画素で構成されている。第1画素91aは、上記各実施形態と同様に構成されたPD92aとマイクロレンズ93aとを備える。第2画素91b及び第3画素91cは、それぞれPD92b、92cと、マイクロレンズ93b、93cとを備える。PD92b、92cは、上記各実施形態と同様に構成されている。
次に、本発明の第9の実施形態について説明する。図14に示すように、本実施形態の画素群100は、第1画素101a、第2画素101b、第3画素101c、第4画素101dの4種類の画素で構成されている。画素101a~101dは、それぞれPD102a~102dと、マイクロレンズ103a~103dとを備える。マイクロレンズ103a~103dは、上記第4の実施形態のマイクロレンズ63a~63dと同一構成である。
次に、本発明の第10の実施形態について説明する。図16において、本実施形態の画素群110は、第1画素111a、第2画素111b、第3画素111cの3種類の画素で構成されている。画素111a~111cは、それぞれPD112a~112cと、マイクロレンズ113a~113cとを備える。マイクロレンズ113a~113cは、上記各実施形態と同様に構成されている。
次に、本発明の第11の実施形態について説明する。図19に示すように、本実施形態の画素群120は、第1画素121a、第2画素121b、第3画素121c、第4画素121dの4種類の画素で構成されている。画素121a~121dは、それぞれPD122a~122dと、マイクロレンズ123a~123dとを備える。マイクロレンズ123a~123dは、上記第9の実施形態のマイクロレンズ103a~103dと同一構成である。
次に、本発明の第12の実施形態について説明する。図21に示すように、本実施形態の画素群130は、第1画素131a、第2画素131b、第3画素131cの3種類の画素で構成されている。画素131a~131cは、それぞれPD132a~132cと、マイクロレンズ133a~133cとを備える。マイクロレンズ133a~133cは、上記各実施形態と同様に構成されている。
11 画素
11a 第1画素(撮影専用画素)
11b 第2画素(位相差検出画素)
11c 第3画素(位相差検出画素)
11d 第4画素(撮影専用画素)
18 画素群
20a、20b、20c、20d PD(光電変換素子)
21a、21b、21c、21d マイクロレンズ
64b 凹部
85 凸部
105 凹部
115 凸部
118a、118b、118c インナーレンズ
125 凸部
125a 傾斜面
135、136 凸部
135a、136a 傾斜面
Claims (15)
- 光電変換素子の受光面の中心に対して光軸を所定の方向にずらして配置されたマイクロレンズを有する複数の位相差検出画素と、
光電変換素子の受光面の中心と光軸とが略一致するように配置された、前記位相差検出画素のマイクロレンズより大きなマイクロレンズを有し、前記位相差検出画素の周囲に配列されたマイクロレンズが他のマイクロレンズより小さく形成された複数の撮影専用画素と、
を備えたことを特徴とする固体撮像装置。 - 前記複数の撮影専用画素は、3種以上の大きさのマイクロレンズを有し、前記位相差検出画素に近付くに連れてマイクロレンズの大きさが段階的に小さくなっていることを特徴とする請求項1記載の固体撮像装置。
- 前記位相差検出画素のマイクロレンズは、隣接する前記撮影専用画素の空き領域に一部が侵入していることを特徴とする請求項1又は2記載の固体撮像装置。
- 光電変換素子の受光面の中心に対して光軸を所定の方向にずらして配置されたマイクロレンズを有する複数の位相差検出画素と、
光電変換素子の受光面の中心と光軸とが略一致するように配置された、前記位相差検出画素のマイクロレンズより大きなマイクロレンズを有し、前記位相差検出画素の周囲に配列されたマイクロレンズの光電変換素子からの高さが、前記位相差検出画素のマイクロレンズの高さより低くされた複数の撮影専用画素と、
を備えたことを特徴とする固体撮像装置。 - 前記各マイクロレンズが形成されるレンズ形成面には、前記位相差検出画素の周囲に配列された前記撮影専用画素に対応する箇所に凹部が形成され、この凹部の内底面にマイクロレンズを形成することにより、前記位相差検出画素の周囲に配列された前記撮影専用画素のマイクロレンズの高さが、前記位相差検出画素のマイクロレンズより低くされていることを特徴とする請求項4記載の固体撮像装置。
- 前記レンズ形成面に深さの異なる複数の凹部を形成することにより、前記撮影専用画素のマイクロレンズの高さが、前記位相差検出画素に近付くに連れて段階的に低くされていることを特徴とする請求項5記載の固体撮像装置。
- 前記位相差検出画素のマイクロレンズは、隣接する前記撮影専用画素のマイクロレンズの高さを低くすることによって生じた空間に一部が侵入していることを特徴とする請求項5又は6記載の固体撮像装置。
- 前記各マイクロレンズが形成されるレンズ形成面には、前記位相差検出画素に対応する箇所に凸部が形成され、この凸部の上にマイクロレンズを形成することにより、前記位相差検出画素のマイクロレンズの高さが、前記撮影専用画素のマイクロレンズよりも高くされていることを特徴とする請求項4記載の固体撮像装置。
- 光電変換素子の受光面の中心と光軸とが略一致するように配置されたマイクロレンズを有する複数の撮影専用画素と、
光電変換素子の受光面の中心に対して光軸を所定の方向にずらして配置された、前記撮影専用画素のマイクロレンズより小さなマイクロレンズを有し、該マイクロレンズの形状が、隣接する前記撮影専用画素との境界部分に向かって裾部が伸びた非球状である複数の位相差検出画素と、
を備えたことを特徴とする固体撮像装置。 - 光電変換素子の受光面の中心に対して光軸を所定の方向にずらして配置されたマイクロレンズを有する複数の位相差検出画素と、
光電変換素子の受光面の中心と光軸とが略一致するように配置された、前記位相差検出画素のマイクロレンズより大きなマイクロレンズを有し、前記位相差検出画素の周囲に配列された光電変換素子の半導体基板上における高さが、前記位相差検出画素の光電変換素子の高さより低くされた複数の撮影専用画素と、
を備えたことを特徴とする固体撮像装置。 - 半導体基板の表面には、前記位相差検出画素の周囲に配列された前記撮影専用画素に対応する箇所に凹部が形成され、この凹部の内底面に光電変換素子を形成することにより、前記位相差検出画素の周囲に配列された前記撮影専用画素の光電変換素子の高さが、前記位相差検出画素の光電変換素子の高さより低くされていることを特徴とする請求項10記載の固体撮像装置。
- 半導体基板の表面には、前記位相差検出画素に対応する箇所に凸部が形成され、この凸部の上に光電変換素子を形成することにより、前記位相差検出画素の光電変換素子の高さが、前記撮影専用画素の光電変換素子の高さより高くされていることを特徴とする請求項10記載の固体撮像装置。
- 前記凸部は、前記位相差検出画素のマイクロレンズの方向を向くように形成された傾斜面を有し、
この傾斜面に前記位相差検出画素の光電変換素子が形成されていることを特徴とする請求項12記載の固体撮像装置。 - 前記撮影専用画素と前記位相差検出画素とは、マイクロレンズの下にインナーレンズを有しており、
前記各インナーレンズは、光電変換素子に焦点が合うように、光電変換素子との距離に応じて形状が変えられていることを特徴とする請求項10から13のいずれか1項に記載の固体撮像装置。 - 光電変換素子の受光面の中心に対して光軸を所定の方向にずらして配置されたマイクロレンズを有する複数の位相差検出画素と、
光電変換素子の受光面の中心と光軸とが略一致するように配置された、前記位相差検出画素のマイクロレンズより大きなマイクロレンズを有し、前記位相差検出画素の周囲に配列された光電変換素子が、前記位相差検出画素と反対の方向に受光面が向くように傾けて形成された複数の撮影専用画素と、
を備えたことを特徴とする固体撮像装置。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103081457A (zh) * | 2010-08-24 | 2013-05-01 | 富士胶片株式会社 | 固态成像装置 |
WO2013114999A1 (ja) * | 2012-01-30 | 2013-08-08 | オリンパス株式会社 | 撮像装置 |
JP2014089432A (ja) * | 2012-03-01 | 2014-05-15 | Sony Corp | 固体撮像装置、固体撮像装置におけるマイクロレンズの形成方法、及び、電子機器 |
JP2015018969A (ja) * | 2013-07-11 | 2015-01-29 | ソニー株式会社 | 固体撮像装置および電子機器 |
JP2015228466A (ja) * | 2014-06-02 | 2015-12-17 | キヤノン株式会社 | 撮像装置及び撮像システム |
JPWO2014157579A1 (ja) * | 2013-03-29 | 2017-02-16 | ソニー株式会社 | 撮像素子および撮像装置 |
JPWO2014141991A1 (ja) * | 2013-03-15 | 2017-02-16 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP2021015984A (ja) * | 2014-12-18 | 2021-02-12 | ソニー株式会社 | 固体撮像素子、および電子機器 |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10298834B2 (en) | 2006-12-01 | 2019-05-21 | Google Llc | Video refocusing |
JP5272433B2 (ja) * | 2008-02-15 | 2013-08-28 | 富士通セミコンダクター株式会社 | 画像撮像素子のずらし量算出方法及び装置、画像撮像素子、画像撮像素子内蔵装置 |
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JP5232118B2 (ja) * | 2009-09-30 | 2013-07-10 | 富士フイルム株式会社 | 撮像デバイスおよび電子カメラ |
WO2012008209A1 (ja) * | 2010-07-12 | 2012-01-19 | 富士フイルム株式会社 | 固体撮像装置 |
US9184199B2 (en) | 2011-08-01 | 2015-11-10 | Lytro, Inc. | Optical assembly including plenoptic microlens array |
WO2013047110A1 (ja) | 2011-09-30 | 2013-04-04 | 富士フイルム株式会社 | 撮像装置及び位相差画素の感度比算出方法 |
CN103139470A (zh) * | 2011-11-30 | 2013-06-05 | 索尼公司 | 数字成像*** |
WO2013099910A1 (ja) * | 2011-12-27 | 2013-07-04 | 富士フイルム株式会社 | 固体撮像装置 |
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US9858649B2 (en) | 2015-09-30 | 2018-01-02 | Lytro, Inc. | Depth-based image blurring |
KR102275235B1 (ko) * | 2013-03-29 | 2021-07-09 | 소니그룹주식회사 | 촬상 소자 및 촬상 장치 |
US10334151B2 (en) | 2013-04-22 | 2019-06-25 | Google Llc | Phase detection autofocus using subaperture images |
KR20160025729A (ko) * | 2014-08-28 | 2016-03-09 | 에스케이하이닉스 주식회사 | 깊이 검출 픽셀을 구비한 이미지 센서 및 이를 이용한 깊이 정보 생성 방법 |
US10341632B2 (en) | 2015-04-15 | 2019-07-02 | Google Llc. | Spatial random access enabled video system with a three-dimensional viewing volume |
US10469873B2 (en) | 2015-04-15 | 2019-11-05 | Google Llc | Encoding and decoding virtual reality video |
US10546424B2 (en) | 2015-04-15 | 2020-01-28 | Google Llc | Layered content delivery for virtual and augmented reality experiences |
US10412373B2 (en) | 2015-04-15 | 2019-09-10 | Google Llc | Image capture for virtual reality displays |
US10440407B2 (en) | 2017-05-09 | 2019-10-08 | Google Llc | Adaptive control for immersive experience delivery |
US10275898B1 (en) | 2015-04-15 | 2019-04-30 | Google Llc | Wedge-based light-field video capture |
US10419737B2 (en) | 2015-04-15 | 2019-09-17 | Google Llc | Data structures and delivery methods for expediting virtual reality playback |
US11328446B2 (en) | 2015-04-15 | 2022-05-10 | Google Llc | Combining light-field data with active depth data for depth map generation |
US10567464B2 (en) | 2015-04-15 | 2020-02-18 | Google Llc | Video compression with adaptive view-dependent lighting removal |
US10565734B2 (en) | 2015-04-15 | 2020-02-18 | Google Llc | Video capture, processing, calibration, computational fiber artifact removal, and light-field pipeline |
US10540818B2 (en) | 2015-04-15 | 2020-01-21 | Google Llc | Stereo image generation and interactive playback |
US10444931B2 (en) | 2017-05-09 | 2019-10-15 | Google Llc | Vantage generation and interactive playback |
JP6506614B2 (ja) | 2015-05-14 | 2019-04-24 | キヤノン株式会社 | 固体撮像装置およびカメラ |
US10566365B2 (en) * | 2015-05-27 | 2020-02-18 | Visera Technologies Company Limited | Image sensor |
KR102374112B1 (ko) | 2015-07-15 | 2022-03-14 | 삼성전자주식회사 | 오토 포커싱 픽셀을 포함하는 이미지 센서, 및 이를 포함하는 이미지 처리 시스템 |
US9979909B2 (en) | 2015-07-24 | 2018-05-22 | Lytro, Inc. | Automatic lens flare detection and correction for light-field images |
JP6789643B2 (ja) * | 2016-03-04 | 2020-11-25 | キヤノン株式会社 | 撮像装置 |
US10275892B2 (en) | 2016-06-09 | 2019-04-30 | Google Llc | Multi-view scene segmentation and propagation |
US10679361B2 (en) | 2016-12-05 | 2020-06-09 | Google Llc | Multi-view rotoscope contour propagation |
US10594945B2 (en) | 2017-04-03 | 2020-03-17 | Google Llc | Generating dolly zoom effect using light field image data |
US10474227B2 (en) | 2017-05-09 | 2019-11-12 | Google Llc | Generation of virtual reality with 6 degrees of freedom from limited viewer data |
US10354399B2 (en) | 2017-05-25 | 2019-07-16 | Google Llc | Multi-view back-projection to a light-field |
US10545215B2 (en) | 2017-09-13 | 2020-01-28 | Google Llc | 4D camera tracking and optical stabilization |
US10965862B2 (en) | 2018-01-18 | 2021-03-30 | Google Llc | Multi-camera navigation interface |
KR102554417B1 (ko) | 2018-06-18 | 2023-07-11 | 삼성전자주식회사 | 이미지 센서 |
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KR20220068034A (ko) | 2020-11-18 | 2022-05-25 | 삼성전자주식회사 | 카메라 모듈 및 카메라 모듈을 포함하는 전자 장치 |
KR20220144549A (ko) * | 2021-04-20 | 2022-10-27 | 삼성전자주식회사 | 이미지 센서 |
US11985435B2 (en) * | 2022-06-08 | 2024-05-14 | Omnivision Technologies, Inc. | Compact camera incorporating microlens arrays for ultra-short distance imaging |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2959142B2 (ja) | 1991-02-22 | 1999-10-06 | ソニー株式会社 | 固体撮像装置 |
JP2003332547A (ja) * | 2002-05-16 | 2003-11-21 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
JP2004361611A (ja) | 2003-06-04 | 2004-12-24 | Fuji Photo Film Co Ltd | 固体撮像素子及び撮影装置 |
JP2005116939A (ja) * | 2003-10-10 | 2005-04-28 | Nikon Corp | 固体撮像素子 |
JP2006049721A (ja) | 2004-08-06 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
JP2007103590A (ja) * | 2005-10-03 | 2007-04-19 | Nikon Corp | 撮像素子、焦点検出装置、および、撮像システム |
JP2007281296A (ja) * | 2006-04-10 | 2007-10-25 | Nikon Corp | 固体撮像装置、および電子カメラ |
JP2007335723A (ja) * | 2006-06-16 | 2007-12-27 | Fujifilm Corp | 固体撮像素子用マイクロレンズ及びその製造方法 |
JP2008071920A (ja) * | 2006-09-14 | 2008-03-27 | Sony Corp | 撮像素子および撮像装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6909554B2 (en) * | 2000-12-27 | 2005-06-21 | Finisar Corporation | Wafer integration of micro-optics |
US8018508B2 (en) * | 2004-04-13 | 2011-09-13 | Panasonic Corporation | Light-collecting device and solid-state imaging apparatus |
US7012754B2 (en) * | 2004-06-02 | 2006-03-14 | Micron Technology, Inc. | Apparatus and method for manufacturing tilted microlenses |
US7292079B2 (en) * | 2005-08-02 | 2007-11-06 | Industrial Technology Research Institute | DLL-based programmable clock generator using a threshold-trigger delay element circuit and a circular edge combiner |
US7352511B2 (en) * | 2006-04-24 | 2008-04-01 | Micron Technology, Inc. | Micro-lenses for imagers |
US8319846B2 (en) * | 2007-01-11 | 2012-11-27 | Raytheon Company | Video camera system using multiple image sensors |
US7978255B2 (en) * | 2007-10-11 | 2011-07-12 | Nikon Corporation | Solid-state image sensor and image-capturing device |
JP5552214B2 (ja) * | 2008-03-11 | 2014-07-16 | キヤノン株式会社 | 焦点検出装置 |
-
2010
- 2010-09-30 WO PCT/JP2010/067035 patent/WO2011061998A1/ja active Application Filing
- 2010-09-30 US US13/124,069 patent/US8102460B2/en not_active Expired - Fee Related
- 2010-09-30 JP JP2011508736A patent/JP4764958B2/ja not_active Expired - Fee Related
- 2010-09-30 EP EP10824276.9A patent/EP2362257B1/en not_active Not-in-force
- 2010-09-30 CN CN201080009635.8A patent/CN102483510B/zh not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2959142B2 (ja) | 1991-02-22 | 1999-10-06 | ソニー株式会社 | 固体撮像装置 |
JP2003332547A (ja) * | 2002-05-16 | 2003-11-21 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
JP2004361611A (ja) | 2003-06-04 | 2004-12-24 | Fuji Photo Film Co Ltd | 固体撮像素子及び撮影装置 |
JP2005116939A (ja) * | 2003-10-10 | 2005-04-28 | Nikon Corp | 固体撮像素子 |
JP2006049721A (ja) | 2004-08-06 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
JP2007103590A (ja) * | 2005-10-03 | 2007-04-19 | Nikon Corp | 撮像素子、焦点検出装置、および、撮像システム |
JP2007281296A (ja) * | 2006-04-10 | 2007-10-25 | Nikon Corp | 固体撮像装置、および電子カメラ |
JP2007335723A (ja) * | 2006-06-16 | 2007-12-27 | Fujifilm Corp | 固体撮像素子用マイクロレンズ及びその製造方法 |
JP2008071920A (ja) * | 2006-09-14 | 2008-03-27 | Sony Corp | 撮像素子および撮像装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2362257A4 |
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JP2015228466A (ja) * | 2014-06-02 | 2015-12-17 | キヤノン株式会社 | 撮像装置及び撮像システム |
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JP2021015984A (ja) * | 2014-12-18 | 2021-02-12 | ソニー株式会社 | 固体撮像素子、および電子機器 |
JP7180658B2 (ja) | 2014-12-18 | 2022-11-30 | ソニーグループ株式会社 | 固体撮像素子、および電子機器 |
US11711629B2 (en) | 2014-12-18 | 2023-07-25 | Sony Group Corporation | Solid-state image pickup device and electronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN102483510B (zh) | 2015-04-15 |
US8102460B2 (en) | 2012-01-24 |
CN102483510A (zh) | 2012-05-30 |
JP4764958B2 (ja) | 2011-09-07 |
EP2362257A4 (en) | 2012-10-03 |
EP2362257A1 (en) | 2011-08-31 |
US20110221947A1 (en) | 2011-09-15 |
EP2362257B1 (en) | 2016-08-17 |
JPWO2011061998A1 (ja) | 2013-04-04 |
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