WO2011018917A1 - ダイヤモンド被覆工具 - Google Patents
ダイヤモンド被覆工具 Download PDFInfo
- Publication number
- WO2011018917A1 WO2011018917A1 PCT/JP2010/059694 JP2010059694W WO2011018917A1 WO 2011018917 A1 WO2011018917 A1 WO 2011018917A1 JP 2010059694 W JP2010059694 W JP 2010059694W WO 2011018917 A1 WO2011018917 A1 WO 2011018917A1
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- WO
- WIPO (PCT)
- Prior art keywords
- diamond
- diamond layer
- base material
- coated tool
- substrate
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/148—Composition of the cutting inserts
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/141—Specially shaped plate-like cutting inserts, i.e. length greater or equal to width, width greater than or equal to thickness
- B23B27/145—Specially shaped plate-like cutting inserts, i.e. length greater or equal to width, width greater than or equal to thickness characterised by having a special shape
- B23B27/146—Means to improve the adhesion between the substrate and the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2226/00—Materials of tools or workpieces not comprising a metal
- B23B2226/31—Diamond
- B23B2226/315—Diamond polycrystalline [PCD]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/04—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner applied by chemical vapour deposition [CVD]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24372—Particulate matter
Definitions
- the present invention relates to a diamond-coated tool, and more particularly to a diamond-coated tool in which the surface of a substrate is coated with a diamond layer.
- a diamond-coated tool having a structure in which a material such as cemented carbide is used as a base material and a polycrystalline diamond layer is coated on the surface of the base material has been developed for a long time.
- the diamond-coated tool in which the surface of the base material is coated with a diamond layer has a strong surface. For this reason, processing of difficult-to-cut materials such as fiber reinforced plastic (FRP: Fiber Reinforced Plastics), which has been difficult to process with tools, can be handled.
- FRP Fiber Reinforced Plastics
- Patent Document 1 Japanese Patent Laid-Open No. 04-263075
- Patent Document 1 Japanese Patent Laid-Open No. 04-263075
- Patent Document 1 by forming a diamond layer on a substrate having irregularities on the surface, an anchor effect appears between the substrate and the diamond layer. This anchor effect can enhance the adhesion between the base material and the diamond layer. Such a diamond-coated tool is unlikely to peel off the base material and the diamond layer in the initial stage of cutting.
- Patent Document 2 Japanese Patent Application Laid-Open No. 2002-079406 also discloses a technique for forming irregularities on the surface of a substrate. However, no significant improvement was observed in extending the life of diamond-coated tools.
- the cause of the separation of the base material and the diamond layer is considered to be due to the difference between the thermal expansion coefficient of the base material and the thermal expansion coefficient of the diamond layer.
- the diamond-coated tool becomes hot due to heat during cutting, the residual stress of compression or tension acts on the diamond layer in the vicinity of the interface with the substrate, thereby peeling between the substrate and the diamond layer. Is estimated to occur.
- Patent Document 3 Japanese Patent Application Laid-Open No. 11-058106
- the approach of relaxing the residual stress generated in the diamond layer when the diamond-coated tool reaches a high temperature is used. Increases adhesion to the layer. Specifically, the adhesion between the base material and the diamond layer is enhanced by controlling the thermal expansion coefficient and material of the base material, the thickness of the diamond layer, and the like.
- Patent Document 3 tends to improve the adhesion between the base material and the diamond layer.
- the material of the base material, the thickness of the diamond layer, and the like are extremely limited. For this reason, it is often the case that the design is made with the manufacturing cost inconsiderable, and the actual situation is that it has hardly been put into practical use.
- the present invention has been made in view of the current situation as described above, and the object of the present invention is not only at the initial stage of cutting, but also when the cutting process is continued for a long time, the interface between the base material and the diamond layer. It is an object of the present invention to provide a diamond-coated tool that hardly causes peeling.
- the diamond-coated tool of the present invention is a diamond-coated tool including a base material and a diamond layer covering the surface of the base material, and the surface of the base material has an arithmetic average roughness Ra of 0.1 ⁇ m or more and 10 ⁇ m or less.
- the average length RSm of the roughness curve element is 1 ⁇ m or more and 100 ⁇ m or less
- the diamond layer has a plurality of voids extending in a crystal growth direction from a portion in contact with the substrate.
- the arithmetic average roughness Ra is preferably 0.4 ⁇ m or more and 4 ⁇ m or less, and the average length RSm of the roughness curve element is preferably 2 ⁇ m or more and 20 ⁇ m or less.
- the number of voids relative to the length of the base material is 1 ⁇ 10 3 pieces / cm or more and 1 ⁇ 10 6 pieces / cm or less. Preferably there is.
- the gap has a width of 5 nm to 200 nm with respect to the crystal growth direction and a length of 10 nm to 1 ⁇ m in the crystal growth direction.
- the diamond layer is preferably made of polycrystalline diamond.
- the diamond layer is preferably formed by chemical vapor deposition.
- the diamond-coated tool of the present invention as described above can be suitably used for cutting difficult-to-cut materials.
- the diamond-coated tool according to the present invention has the above-described configuration, which makes it difficult for the base material and the diamond layer to be peeled off even when continuously cut and improves the tool life. It is.
- FIG. 1 is a schematic cross-sectional view of the vicinity of the interface between a base material and a diamond layer of the diamond-coated tool of the present invention.
- the diamond-coated tool 10 of the present invention includes a base material 1 and a diamond layer 3 formed on the base material 1.
- the diamond-coated tool 10 of the present invention having such a configuration is, for example, a drill, end mill, milling or turning cutting edge replacement cutting tip, metal saw, gear cutting tool, reamer, tap, or pin shaft milling of a crankshaft. It can be used extremely useful as a cutting chip, a glass substrate cutting piece, an optical fiber cutter, or the like.
- the diamond-coated tool of the present invention can be used for various applications, it can be suitably used particularly for processing difficult-to-cut materials that have been difficult to process with conventional cutting tools. That is, the diamond-coated tool of the present invention has an improved surface hardness compared to conventional cutting tools, and can therefore be used extremely effectively for processing difficult-to-cut materials.
- a conventionally known material known as such a base material for cutting can be used without any particular limitation.
- cemented carbide for example, WC base cemented carbide, including WC, including Co, or further including carbonitride such as Ti, Ta, Nb, etc.
- cermet TiC, TiN, TiCN, etc.
- High-speed steel, tool steel, ceramics such as titanium carbide, silicon carbide, silicon nitride, aluminum nitride, aluminum oxide, and mixtures thereof), cubic boron nitride sintered body, diamond Sintered bodies etc. can be mentioned as an example of such a substrate.
- the substrate 1 used in the present invention may have a modified surface.
- a de- ⁇ layer may be formed on the surface, or in the case of cermet, a surface hardened layer may be formed, and even if the surface is modified in this way, The effect is shown.
- the surface of the substrate 1 is characterized by having an uneven shape.
- the average value of the amplitude in the height direction of the unevenness and the average value of the amplitude in the horizontal direction of the unevenness are defined as predetermined values.
- the average value of the amplitude in the height direction of the unevenness is defined as the arithmetic average roughness Ra, and the Ra needs to be 0.1 ⁇ m or more and 10 ⁇ m or less.
- the average value of the horizontal amplitude of the unevenness is defined as the average roughness RSm of the roughness curve element, and the RSm needs to be 1 ⁇ m or more and 100 ⁇ m or less.
- the initial generation nuclei of diamond are easily anchored to the base material when the diamond layer described later is formed.
- the adhesion between the base material and the diamond layer can be improved.
- the base material 1 having a specific uneven state as described above is coated with a diamond layer by a chemical vapor deposition (CVD) method, as shown in FIG.
- a plurality of voids 2 extending in the crystal growth direction from the portion in contact with the diamond layer 3 can be formed.
- the void 2 functions to relieve residual stress generated in the diamond layer 3 due to the difference in thermal expansion coefficient between the base material 1 and the diamond layer 3.
- the residual stress mitigating action by the void 2 can significantly improve the adhesion between the base material 1 and the diamond layer 3 in combination with the anchor effect described above.
- peeling at the interface between the substrate 1 and the diamond layer 3 is less likely to occur even when continuous machining is performed. The details of the gap 2 will be described later.
- the Ra is 0.4 ⁇ m or more and 4 ⁇ m or less
- the RSm is preferably 2 ⁇ m or more and 20 ⁇ m or less, more preferably Ra is 1.3 ⁇ m or more and 2.6 ⁇ m or less, and the RSm is 3 ⁇ m or more and 6 ⁇ m or less.
- Examples of a method for forming the uneven state on the surface of the substrate include chemical etching treatment, sand blasting treatment, electrochemical etching treatment, and a combination thereof.
- the base material is immersed in a mixed acid of sulfuric acid and nitric acid to dissolve a part of the surface of the base material.
- the mixed acid used for the chemical etching treatment preferably has a sulfuric acid concentration of 10% by mass to 98% by mass, and a nitric acid concentration of 10% by mass to 70% by mass.
- the time for immersing the substrate in the mixed acid is preferably 30 seconds or longer and 60 minutes or shorter.
- Examples of the sandblast treatment include a method of spraying alumina or silicon carbide particles.
- the average particle diameter (particle diameter) of the particles used for the sandblast treatment is preferably 5 ⁇ m or more and 80 ⁇ m or less, and the blast injection pressure of the particles onto the base material is preferably 0.1 MPa or more and 0.4 MPa or less.
- Examples of the electrochemical etching treatment include a method of electrochemically electrolyzing Co contained in the component of the base material.
- the arithmetic average roughness Ra as used in the present invention is a parameter indicating the length of the unevenness formed on the surface of the substrate in the height direction, and the larger the value, the rougher the unevenness is.
- FIG. 2 is a graph showing an example of a cross section of a substrate used in the present invention.
- the sum of the areas of the portions is set to be equal to the sum of the areas of the portions located above the reference line. That is, in FIG. 2, the roughness curve located at the lower part of the reference line is folded back to the upper part of the reference line, and the folded outline is shown by a dotted line.
- the reference line is determined so as to satisfy the following formula (1).
- the arithmetic average roughness Ra is conceptually described with reference to FIG. 2, the sum of the area of the shaded area surrounded by the dotted line and the area of the shaded area surrounded by the solid line of the roughness curve is averaged by the reference length L.
- the height at the time corresponds to the arithmetic average roughness Ra.
- the average length RSm of the roughness curve element referred to in the present invention is a parameter indicating the length (pitch) in the width direction of the uneven state formed on the surface of the substrate. Shows that it is moderate.
- the method defined in JIS B0601: 2001 is adopted as the average length RSm of the roughness curve elements. Based on FIG. 3, the calculation method of average length RSm of a roughness curve element is demonstrated.
- FIG. 3 is a graph showing an example of a cross section of a substrate used in the present invention. In FIG.
- reference point the lengths of m contour curve elements (Xs1, Xs2, Xs3... Xsi... Xsm in FIG. 3) are obtained within the range of the reference length L.
- the average value of the lengths of these m contour curve elements is the average length RSm of the roughness curve elements. That is, the average length RSm of the roughness curve element is calculated by the following equation (3).
- the sum of the lengths Xs1, Xs2, Xs3,... Xsi,... Xsm of the m contour curve elements corresponds to the reference length L.
- the average length RSm of the roughness curve elements can be simply expressed as L / m.
- the surface roughness parameters (Ra and RSm) described above may measure the surface of the substrate before forming the diamond layer on the substrate, or directly or indirectly after forming the diamond layer. You may measure the surface. However, from the viewpoint that the surface roughness of the substrate can be measured without destroying the diamond layer, it is preferable to measure the surface roughness of the substrate before forming the diamond layer on the substrate.
- an apparatus capable of performing parameter analysis based on the ISO standard or the JIS standard may be used.
- stylus type and optical (laser, interference, etc.) type measuring devices are commercially available.
- the laser microscope has high spatial resolution and easy numerical analysis. Suitable for measuring roughness.
- Ra and RSm in this specification are values obtained by measurement using a laser microscope having a laser wavelength of 408 nm, a horizontal spatial resolution of 120 nm, and a height resolution of 10 nm.
- the diamond layer A method may also be used in which the substrate is cut, the unevenness on the surface of the substrate is observed from a direction perpendicular to the cut surface, and the observed unevenness is digitized.
- the surface roughness (Ra and RSm) of the substrate is measured using the measuring apparatus exemplified above, even if the measured values vary in the plane, at least one numerical range defined by the present invention If it is within, the effect of the present invention is shown.
- the surface roughness of the base material satisfy the above numerical range when the reference length L is 10 ⁇ m or more.
- the diamond layer formed on the substrate is preferably a film made of polycrystalline diamond.
- the polycrystalline diamond is one in which diamond fine particles of about 10 nm to several ⁇ m are tightly bonded.
- Such a diamond layer is more preferably formed by a film forming process that increases crystallinity.
- the “crystal growth direction” refers to a vector direction in which the distance from the base point to the surface of the diamond layer is the shortest when a specific point on the surface of the substrate is used as the base point. .
- a conventionally known CVD method can be used without any particular limitation.
- examples of such a CVD method include a microwave plasma CVD method, a hot filament CVD method, and a plasma jet CVD method.
- a hot filament CVD method it is preferable to employ a hot filament CVD method.
- the diamond layer of the present invention is preferably formed so as to cover the entire surface of the base material, but a part of the base material is not covered by the diamond layer, or any part on the base material
- the composition of the diamond layer may be different. In this specification, only the case where a diamond layer is formed on a base material is described, but a single layer or two or more layers different from the diamond layer are formed between the base material and the diamond layer. May be.
- the diamond layer described above may contain, for example, different atoms such as boron, nitrogen, and silicon, or may contain inevitable impurities other than these elements.
- the diamond-coated tool of the present invention is characterized in that when a diamond layer is formed on a substrate, a plurality of voids extending in the crystal growth direction from the substrate are formed in the diamond layer.
- the voids relieve residual stress generated in the diamond layer due to the difference in thermal expansion coefficient between the base material and the diamond layer. Thereby, peeling with a base material and a diamond layer can be prevented effectively.
- the above-mentioned voids can be confirmed with a scanning electron microscope (SEM).
- SEM scanning electron microscope
- the diamond-coated tool is cut together with the base material including the diamond layer, and a sample for SEM observation is prepared on the cut surface using a commercially available cross-section sample preparation device. And the presence or absence of a space
- TEM Transmission Electron Microscope
- the number of voids with respect to the length of the base material on the cutting surface is 1 ⁇ 10 3 pieces / cm or more and 1 ⁇ 10 6 pieces / cm or less. Is preferred.
- the length of the base material here means the length of the interface between the base material and the diamond layer that appears on the cut surface when the diamond-coated tool is cut.
- the size of the voids is preferably such that the width in the crystal growth direction is 5 nm or more and 200 nm or less, and the length in the crystal growth direction is 10 nm or more and 1 ⁇ m or less.
- the width of the void is less than 5 nm or the height of the void is less than 10 nm, the size of the void is not sufficient, and the effect of relaxing the residual stress generated in the diamond layer cannot be sufficiently obtained.
- the width of the void exceeds 200 nm, or when the length of the void exceeds 1 ⁇ m, the diamond layer is easily cracked with the void as a base point because the void is large.
- voids it is not necessary that all the voids satisfy the above numerical range size, and one or more voids among the voids appearing on the cut surface when cut together with the substrate including the diamond layer are the above numerical values. Any material that satisfies the range may be used.
- the “width relative to the crystal growth direction” refers to the length in the direction perpendicular to the crystal growth direction.
- the size (width and length) of the voids in the diamond layer can be grasped by observing an arbitrary cut surface when the diamond-coated tool is cut with the SEM or TEM described above.
- the number and size of the voids formed in the diamond layer are greatly influenced by the uneven state of the surface of the base material (that is, the numerical values of Ra and RSm).
- the present invention is not limited to this, and it has also been found that it is affected by the gas pressure and gas composition when the diamond layer is formed, as well as the surface temperature of the substrate. Therefore, it is possible to form a desired number and size of voids by adjusting the unevenness state of the surface of the substrate and controlling various conditions when forming the diamond layer.
- the gas pressure in the hot filament CVD apparatus is preferably 1.3 ⁇ 10 2 Pa or more and 2.6 ⁇ 10 4 Pa or less.
- a desired number and size of voids can be formed.
- the gas composition to be introduced for example, a mixed gas having a CH 4 gas concentration of 0.3 volume% or more and 20 volume% or less with respect to H 2 gas is preferably used.
- the surface temperature of a base material at the time of formation of a diamond layer is 600 degreeC or more and 1100 degrees C or less.
- the diamond layer is formed by the hot filament CVD method, but the diamond layer may be formed by a conventionally known CVD method such as a microwave plasma CVD method or a plasma jet CVD method.
- Examples 1 to 14 and Comparative Examples 1 to 9 In the production of the diamond-coated tool of each example and each comparative example, the material of the diamond-coated tool was JIS K10 cemented carbide (WC-5% Co), and the tool shape of the substrate was SNMN120212. Some were used.
- the surface of the substrate was etched by immersing the surface of the substrate in a mixed acid of 98% by mass sulfuric acid and 60% by mass nitric acid for 20 minutes. Then, sand blasting treatment was performed in which media of various particle sizes (particles having an average particle size of 5 ⁇ m to 50 ⁇ m) were sprayed onto the substrate at a blast spray pressure of 0.3 MPa.
- the surface roughness parameters Ra and RSm were measured using an optical laser microscope (product name: LEXT OLS3500 (manufactured by Olympus Corporation)) with respect to the base material used in each example and each comparative example after the sandblast treatment. It was measured. The results are shown in Table 1 below.
- FIG. 4 is a photographed image when the cut surface of the diamond-coated tool produced in Example 1 is cut with an arbitrary surface and observed with a transmission electron microscope.
- the diamond layer 3 is formed on the base material 1 with the surface roughness parameters (Ra and RSm) satisfying a predetermined numerical value range under specific manufacturing conditions. It can be seen that a diamond layer 3 having a plurality of voids 2 extending in the crystal growth direction is formed.
- the number of voids 2 with respect to the length of the substrate 1 was calculated.
- the size of a specific gap among the gaps shown in the photographed image of the cut surface in FIG. 4 was calculated.
- the size of the void the width in the crystal growth direction was 20 nm, and the length in the crystal growth direction was 500 nm.
- Example 14 and Comparative Example 5 a diamond layer was formed under conditions different from those of the above Examples. Specifically, in Example 14, the gas pressure and gas composition were changed from the manufacturing conditions of the above Examples and the like, and the size and number of voids formed in the diamond layer as shown in Table 1 were adjusted. . In Comparative Example 5, the diamond layer was formed by adjusting the gas pressure and the gas composition so as not to form voids in the diamond layer.
- the diamond-coated tool of each example thus produced is a diamond-coated tool including a base material and a diamond layer covering the surface of the base material, and the surface of the base material has an arithmetic average roughness Ra. Is 0.1 ⁇ m or more and 10 ⁇ m or less, and the average length RSm of the roughness curve element is 1 ⁇ m or more and 100 ⁇ m or less, and the diamond layer has a plurality of voids extending in the crystal growth direction from the substrate.
- Table 3 below shows the time until the diamond layer of each example and each comparative example peels as a result of the above-described evaluation of adhesion. The longer the time until peeling, the better the adhesion between the substrate and the diamond layer.
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- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Drilling Tools (AREA)
Abstract
Description
<ダイヤモンド被覆工具>
図1は、本発明のダイヤモンド被覆工具の基材とダイヤモンド層との界面付近の概略断面図である。本発明のダイヤモンド被覆工具10は、図1に示されるように基材1と、該基材1上に形成されたダイヤモンド層3とを備えるものである。このような構成を有する本発明のダイヤモンド被覆工具10は、たとえばドリル、エンドミル、フライス加工用または旋削加工用刃先交換型切削チップ、メタルソー、歯切工具、リーマ、タップ、またはクランクシャフトのピンミーリング加工用チップ、ガラス基板切断用切り駒、光ファイバーカッター等として極めて有用に用いることができる。
本発明のダイヤモンド被覆工具10の基材1としては、このような切削加工用の基材として知られる従来公知のものを特に限定なく使用することができる。たとえば、超硬合金(たとえばWC基超硬合金、WCの他、Coを含み、あるいはさらにTi、Ta、Nb等の炭窒化物等を添加したものも含む)、サーメット(TiC、TiN、TiCN等を主成分とするもの)、高速度鋼、工具鋼、セラミックス(炭化チタン、炭化硅素、窒化硅素、窒化アルミニウム、酸化アルミニウム、およびこれらの混合体など)、立方晶型窒化硼素焼結体、ダイヤモンド焼結体等をこのような基材の例として挙げることができる。
本発明でいう算術平均粗さRaとは、基材の表面に形成される凹凸の高さ方向の長さを示すパラメータであり、その値が大きいほど凹凸の段差が粗いことを示す。以下、図2を用いて算術平均粗さRaの算出方法を説明する。図2は本発明に用いられる基材の断面の一例をグラフ化したものである。図2に示されるように、基準長さLにおける基材の表面の粗さ曲線の関数はy=Z(x)で表される。ここで、粗さ曲線(y=Z(x))の基準線(y=0が示す線)は、基準線と粗さ曲線とに囲まれる部分の面積のうち、基準線の下部に位置する部分の面積の総和と、基準線の上部に位置する部分の面積の総和とが等しくなるように定められる。すなわち、図2においては、基準線の下部に位置する粗さ曲線を、基準線の上部に折り返した上で、その折り返された外郭を点線で示している。この点線が囲う斜線部の面積の総和と、粗さ曲線の実線が囲う斜線部の面積の総和とが等しくなるように基準線(y=0)を定める。数学的には、以下の式(1)を満たすように基準線を定める。
本発明でいう粗さ曲線要素の平均長さRSmとは、基材の表面に形成される凹凸状態の幅方向の長さ(ピッチ)を示すパラメータであり、その値が大きいほど凹凸のピッチが緩やかであることを示す。本発明において、粗さ曲線要素の平均長さRSmは、JIS B0601:2001で規定された方法を採用する。図3に基づいて、粗さ曲線要素の平均長さRSmの算出方法を説明する。図3は、本発明に用いられる基材の断面の一例をグラフ化したものである。図3において、粗さ曲線(y=Z(x))が正から負に代わる地点(以下「基準点」と記す)から、隣接する他の基準点までの長さを輪郭曲線要素の長さXsと定めると、基準長さLの範囲内にm個の輪郭曲線要素の長さ(図3中のXs1、Xs2、Xs3・・・Xsi・・・Xsm)が得られる。これらm個の輪郭曲線要素の長さの平均値が粗さ曲線要素の平均長さRSmである。すなわち、粗さ曲線要素の平均長さRSmは、以下の式(3)により算出される。
上述の表面粗さのパラメータ(RaおよびRSm)は、基材上にダイヤモンド層を形成する前に基材の表面を測定してもよいし、ダイヤモンド層を形成した後に直接または間接的に基材の表面を測定してもよい。ただし、ダイヤモンド層を破壊することなく基材の表面粗さを測定できるという観点から、基材上にダイヤモンド層を形成する前に基材の表面粗さを測定することが好ましい。
本発明において、基材上に形成されるダイヤモンド層は、多結晶ダイヤモンドからなる膜であることが好ましい。ここで、多結晶ダイヤモンドとは、10数nm~数μm程度のダイヤモンド微粒子が固く結合したものである。このようなダイヤモンド層は、結晶性を高くするような成膜プロセスにより形成されることがより好ましい。また、ダイヤモンド層の形成と同時に基材から結晶成長方向に伸びる空隙を複数形成するという観点から、CVD法を用いる必要がある。
本発明のダイヤモンド被覆工具は、基材上にダイヤモンド層を形成するときに、ダイヤモンド層に基材から結晶成長方向に伸びる空隙が複数形成されることを特徴とする。ダイヤモンド層が空隙を複数有することにより、当該空隙が基材とダイヤモンド層との熱膨張係数の差に起因してダイヤモンド層中に発生する残留応力を緩和する。これにより基材とダイヤモンド層との剥離を有効に防止することができる。
以下、実施例を挙げて本発明をより詳細に説明するが、本発明はこれらに限定されるものではない。
各実施例および各比較例のダイヤモンド被覆工具の作製にあたり、ダイヤモンド被覆工具の基材として、その材質がJIS K10超硬合金(WC-5%Co)であって、基材の工具形状がSNMN120412であるものを用いた。
上記で作製した実施例1~14および比較例1~9のダイヤモンド被覆工具のそれぞれについて、湿式の断続切削を行なうことにより密着性の評価を行なった。切削条件は、下記の表2に示したようにAl-16%のSiの素材に6つの溝を設けた丸棒を被削材として用い、切削速度400m/min、切り込み深さ0.5mm、送り速度0.12mm/revの条件で行なった。該切削条件による密着性の評価は、一定時間ごとに切削加工を止めて刃先状態を観察し、ダイヤモンド層が剥離するまでの時間を評価の指標とした。
Claims (6)
- 基材(1)と、前記基材(1)の表面を被覆したダイヤモンド層(3)とを含むダイヤモンド被覆工具(10)であって、
前記基材(1)の表面は、算術平均粗さRaが0.1μm以上10μm以下であり、かつ、粗さ曲線要素の平均長さRSmが1μm以上100μm以下であり、
前記ダイヤモンド層(3)は、前記基材(1)と接する部分から結晶成長方向に伸びる空隙(2)を複数有する、ダイヤモンド被覆工具(10)。 - 前記算術平均粗さRaは、0.4μm以上4μm以下であり、かつ、
前記粗さ曲線要素の平均長さRSmは、2μm以上20μm以下である、請求の範囲1に記載のダイヤモンド被覆工具(10)。 - 前記ダイヤモンド被覆工具(10)を前記基材(1)と前記ダイヤモンド層(3)とを含む面で切断する任意の切断面において、
前記基材(1)の長さに対する前記空隙(2)の個数は、1×103個/cm以上1×106個/cm以下である、請求の範囲1に記載のダイヤモンド被覆工具(10)。 - 前記空隙(2)は、結晶成長方向に対する幅が5nm以上200nm以下であり、かつ、結晶成長方向の長さが10nm以上1μm以下である、請求の範囲1に記載のダイヤモンド被覆工具(10)。
- 前記ダイヤモンド層(3)は、多結晶ダイヤモンドからなる、請求の範囲1に記載のダイヤモンド被覆工具(10)。
- 前記ダイヤモンド層(3)は、化学気相成長法により形成される、請求の範囲1に記載のダイヤモンド被覆工具(10)。
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CN102965637A (zh) * | 2011-08-30 | 2013-03-13 | 三菱综合材料株式会社 | 碳膜包覆部件及其制造方法 |
JP2013116541A (ja) * | 2011-12-05 | 2013-06-13 | Keio Gijuku | ダイヤモンド被膜被着部材およびその製造方法 |
WO2020008722A1 (ja) * | 2018-07-02 | 2020-01-09 | 住友電工ハードメタル株式会社 | ダイヤモンド被覆工具 |
US20210031280A1 (en) * | 2017-06-21 | 2021-02-04 | Kyocera Corporation | Coated tool, cutting tool, and method for manufacturing machined product |
WO2021075358A1 (ja) * | 2019-10-18 | 2021-04-22 | 住友電工ハードメタル株式会社 | ダイヤモンド被覆工具 |
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WO2013105348A1 (ja) * | 2012-01-10 | 2013-07-18 | 住友電工ハードメタル株式会社 | ダイヤモンド被覆工具 |
WO2019049252A1 (ja) * | 2017-09-07 | 2019-03-14 | 住友電工ハードメタル株式会社 | 回転切削工具 |
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JP2020073447A (ja) * | 2020-01-21 | 2020-05-14 | 信越化学工業株式会社 | ダイヤモンド基板及びダイヤモンド自立基板 |
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BRPI1005679A8 (pt) | 2018-02-06 |
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BRPI1005679A2 (pt) | 2016-02-23 |
JP4690479B2 (ja) | 2011-06-01 |
US9731355B2 (en) | 2017-08-15 |
CN102257176A (zh) | 2011-11-23 |
EP2465970A4 (en) | 2013-10-30 |
EP2465970A1 (en) | 2012-06-20 |
CN102257176B (zh) | 2015-04-01 |
EP2465970B1 (en) | 2016-07-20 |
US20110250394A1 (en) | 2011-10-13 |
US20160175941A1 (en) | 2016-06-23 |
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