Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
  • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
  • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0236—Special surface textures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0236—Special surface textures
  • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
  • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
  • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
  • H01L31/0687—Multiple junction or tandem solar cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
  • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
  • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
  • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/52—PV systems with concentrators
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/544—Solar cells from Group III-V materials
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/545—Microcrystalline silicon PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present invention relates to the field of photoelectric devices. More particularly, it relates to a photoelectric device composed of elementary cells of p-i-n or p-n configuration, which are stacked on top of one another and absorb the light over different wavelength ranges. Such devices are called multiple-junction cells. The invention also relates to a process for producing this photoelectric device.
• a particularly advantageous application of the present invention is for the production of photovoltaic cells intended for generating electrical energy, but the invention also applies, more generally, to any structure in which light radiation is converted into an electrical signal, such as photodetectors.
• a silicon thin-film double-junction or tandem cell consists of a top cell made of amorphous silicon, which absorbs visible light (up to about
• top denotes the side close to the incident light while “bottom” denotes the side away from the incident light.
• the front transparent contact is rough so as to scatter the light in the device.
• the layers are deposited on top of another and then the substrate roughness propagates through the interfaces of the layers.
• thin layers (0-500 nm) keep the original surface roughness of the substrate.
• a rough surface consists of a succession of bumps and hollows formed from elementary surfaces of greater or lesser inclination.
• the morphology of the surface of the substrate plays a paramount role in the optical performance (short-circuit current density (J sc )) and electrical performance (open-circuit voltage (V oc ) and fill factor (FF)), i.e. the efficiency of the cell.
• J sc optical performance
• V oc electrical performance
• FF fill factor
• FF fill factor
• FF fill factor
• FF fill factor
• FF fill factor
• Voc fill factor
• the optical characteristics of the cell are improved. Consequently, the optimum morphology is a compromise between the electrical characteristics and the optical characteristics of the solar cell.
• the electrical characteristics of the amorphous cell suffer much less from a substrate morphology having highly inclined elementary surfaces. However, it suffers from degradation in efficiency when it is exposed to light.
• the means of limiting the degradation is to reduce the thickness of the cell. To reduce the thickness of the cell and maintain good efficiencies, substrates with highly inclined elementary surfaces are used to increase the light scattering in the cell.
• the problem consists in increasing the current in the cells using rough surfaces that scatter the light in the cell while maintaining good electrical characteristics of the cell.
• the optimum morphologies for the top and bottom cells are different.
• the top cell requires a substrate morphology having highly inclined elementary surfaces so as to increase its current, to reduce its thickness and thus limit its degradation.
• the bottom microcrystalline cell suffers from an unsuitable morphology, which is manifested in the tandem cell by the same symptoms as in a single cell, namely a drop in the fill factor FF and in the open-circuit voltage V oc .
• An intermediate mirror (50-150 nm in thickness) between the top cell and the bottom cell, enabling the top cell current to be increased.
• An intermediate mirror is a layer placed between two elementary cells with a refractive index smaller than the refractive indices of the elementary cells.
• a "micromorph" cell such an intermediate mirror with a refractive index of typically between 1.3 and 2.5 is inserted between the top cell and the bottom cell. This makes it possible to increase the current of the top cell without having to increase its thickness, thereby minimizing the effect of the degradation of the top cell under illumination.
• Patent US 6 825 408 describes the use, between the top cell and the bottom cell, of an intermediate layer having irregular surfaces of different heights (Ry or Rmax), the light outgoing side having a greater average level difference and/or a greater maximum level difference when compared to the light receiving side. But Patent US 6 825 408 describes only the use of the n-i-p structure, whereas the present invention is limited to the use of p-i-n.
• Patent application US 2002/0011263 describes the use, between the top cell and the bottom cell, of an intermediate layer having irregular surfaces of different heights.
• patent application US 2002/0011263 describes only ways to produce uneven surfaces to increase the light-trapping properties of the device, whereas the problem of the present invention is to produce a morphology suitable for the growth of the bottom cell.
• US 2002/0011263 discloses substantially the use of the n-i-p structure, whereas the present invention is limited to the use of p-i-n.
• the bottom face of the intermediate layer has also a surface level difference (Ry) comprised between 5 nm and 150 nm.
• Ry surface level difference
• Figure 7 of US 2002/0011263 shows that the surface level difference of the first electrode should be less than 150 nm. Indeed, it is disclosed in this document that the electrical properties of the crystalline silicon photoelectric conversion device decrease rapidly if Ry is greater than 150 nm.
• An object of the present invention is therefore to alleviate these drawbacks, by providing a higher-performance photoelectric device having separately optimized surface morphologies for the growth of each of the two elementary cells.
• a multiple-junction photoelectric device comprising a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of p-i-n or p-n configuration, on which a second conducting layer is deposited, and at least one intermediate layer provided between two adjacent elementary photoelectric devices, said intermediate layer having, on the incoming light side, a top face and, on the other side, a bottom face, said top and bottom faces having respectively a surface morphology comprising inclined elementary surfaces such that coobottom is smaller than cootop by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where cootop is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and coobottom is the angle for which
• the aim of the present invention is to produce more even surface to better adapt the morphology to the growth of the bottom cell, said bottom cell having a p-i-n or p-n configuration.
• the present invention also relates to a process for producing a multiple- junction photoelectric device comprising a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of p-i-n or p-n configuration on which a second conducting layer is deposited.
• the process includes a step of depositing, on at least one of said elementary photoelectric devices, an intermediate layer having, on the incoming light side, a top face and, on the other side, a bottom face, said top and bottom faces having respectively a surface morphology comprising inclined elementary surfaces such that coobottom is smaller than cootop by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where cootop and coobottom are defined above.
• - Figure 1 shows a diagram of a tandem cell according to the invention
• - Figure 2 shows a diagram illustrating the calculation of the angle of inclination of the surface at the point A of an image obtained by atomic force microscopy (AFM);
• - Figure 3 shows the integral of the angular distribution of the top and bottom faces of the intermediate layer in a device according to the invention.
• Figure 1 shows a photoelectric device or a "micromorph" cell 1 comprising, stacked on top of one another, a substrate 2, a first transparent conducting layer 3, constituting a first electrode, a first elementary photoelectric device 4, called the top cell, an intermediate layer 5, a second elementary photoelectric device 6, called the bottom cell, and a second conducting layer 7, constituting a second electrode.
• the device 1 is exposed to light oriented along the arrows 8.
• the intermediate layer 5 has, on the incoming light side, a top face 10 and, on the other side, a bottom face 11.
• said top 10 and bottom 11 faces have respectively a surface morphology comprising inclined elementary surfaces such that coobottom is smaller than cootop by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where cootop is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and coobottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.
• the difference may be comprised between 3° and 60°, preferably between 6° and 25° and more preferably between 7° and 15°.
• AFM measurement is carried out on a surface measuring 5 ⁇ m x 5 ⁇ m corresponding to a matrix of 256 x 256 equidistant points (x and y axes in the conventional coordinate system) which represents the topology (z axis) of the surface of the specimen.
• the 2nd-order polynomial that minimizes the sum of the squared differences between itself and the surface is subtracted from this image. What is thus obtained is a good representation of the morphology of the surface S, which typically consists of structures having sizes between 50 and
• the angle between the vector normal to the horizontal plane P and the vector Vn normal to the surface S is calculated for each point A in the AFM image.
• the relevant elementary surface for calculating the normal to the point A is defined by the point A and two vectors Vx and Vy.
• Vx is the vector that connects the two points (close neighbours in the AFM matrix) before and after the point A in the direction x
• Vy is the vector that connects the two points (close neighbours in the AFM matrix) before and after the point A in the direction y.
• the vector Vn normal to the elementary surface in question is determined by the vector product of Vx and Vy.
• the angle of inclination ⁇ of the elementary surface is defined as the angle between the normal vector Vn of the elementary surface in question and the vector normal to the horizontal plane P.
• a new matrix of points representing the inclination of each elementary surface at each point in the AFM matrix may be constructed. Starting from the matrix that indicates the inclination at each point of the surface, it is possible to produce a histogram of the angles from 0 to 90° (angular distribution) that gives the proportion of the surface which has an inclination lying within a certain angle interval (typically 2 degrees). By integrating the latter, the integral of the angular distribution is obtained (cf. Figure 3). The angles are plotted on the x-axis. The proportion of the elementary surfaces having an inclination equal to or less than a given angle is plotted on the y- axis.
• a flat horizontal surface is defined as having only elementary surfaces having an angle of inclination equal to 0°, and therefore the integral of the angular distribution is equal to 1 between 0° and 90°.
• an extremely rough surface, with highly inclined elementary surfaces shows an angular distribution with a high proportion of elementary surfaces having high angles of inclination and therefore the integral of the angular distribution is close to 0 for small angles (e.g.: 0°-15°) and is close to 1 only for large angles (e.g.: 30°-70°).
• the value ⁇ in question is the angle coo for which 90% of the elementary surfaces of the surface studied have an inclination equal to or less than this angle.
• the angle cootop is comprised between 20° and 80°, and more preferably comprised between 40° and 80°.
• the angle coobottom is comprised between 0° and 40°, and more preferably comprised between 5° and 40°.
• the peak to valley roughness is defined by JIS B0601 (maximum height; may be referred to as Ry or Rmax).
• the peak to valley roughness of the bottom face 11 is greater than
• the peak to valley roughness of the bottom face 11 may be comprised between 200 nm and 2 000 nm, preferably between 200 nm and 900 nm, and more preferably between 300 nm and 700 nm.
• the present invention allows to have an intermediate layer having a bottom face with a peak to valley roughness greater than 150 nm, in such a way as to promote the scattering of the light in the cell and to improve the optical characteristics of the cell, without any decrease of the electrical characteristics of the cell.
• the peak to valley roughness of the top face 10 is greater than the peak to valley roughness of the bottom face 11.
• the peak to valley roughness of the top face 10 may be comprised between
• the substrate 2 may be made of a material chosen from the group comprising glass and plastics (for example PEN, PET and polyimide).
• the first conducting layer 3 is made of a transparent conducting oxide (for example ZnO, ITO or SnO2) (cf. Fay, Steinhauser, Oliveira, Vallat-Sauvain and BaIMf, "Opto-electronic properties of rough LP-CVD ZnO:B for use as TCO in thin-film silicon solar cells", Thin Solid Films, 515 (24), p.8558-8561 ,
• a transparent conducting oxide for example ZnO, ITO or SnO2
• the second conducting layer 7 is made of a transparent conducting oxide (for example ZnO, ITO, InO, SnO2, etc.), a metal (Ag, Al) or the combination of a transparent oxide and a metal (cf. Meier, Kroll, Spitznagel, Benagli, Roschek, Pfanner, Ellert, Androutsopoulos, Huegli, Buechel, Buechel, Nagel, Feitknecht and Bucher, « Progress in up-scaling of thin film silicon solar cells by large-area PECVD KAI systems » Proc. of the 31th IEEE Photovoltaic
• the conducting layers 3 and 7 are deposited by processes known to those skilled in the art, such as evaporation, sputtering, and chemical deposition.
• the chemical deposition process (examples: LP-CVD ZnO, AP-CVD SnO2) (cf. Fay, Steinhauser, Oliveira, Vallat-Sauvain and BaIMf, "Opto-electronic properties of rough LP- CVD ZnO:B for use as TCO in thin-film silicon solar cells", Thin Solid Films, 515 (24), p.8558-8561 , 2007), making it possible to obtain a conducting layer having an optimum surface morphology for the top elementary cell 4.
• the elementary photoelectric devices 4 and 6 may have the p-i-n or p-n configuration. This means that the first layer deposited for producing the elementary cell is the p layer, then optionally the i layer, and then the n layer. Of course, it is obvious that all combinations are possible. In particular when the device comprises two elementary cells, the four combinations p-i-n/p-i-n, p-n/p-i-n, p-n/p-n and p-i-n/p-n are possible. The p-i-n/p-i-n combination is preferred.
• the elementary photoelectric device 4 or "top cell” located on the side facing the substrate 2 relative to the intermediate layer 5, is made of a semiconductor material characterized by a bandgap E g t op and the other elementary photoelectric device 6 or "bottom cell", located on the other side relative to the intermediate layer 5, is made of a semiconductor material characterized by a bandgap Egbottom.
• E g t op is greater than Egbottom so as to complementarily absorb the solar light spectrum.
• the elementary photoelectric device 4, or top cell is a semiconductor, preferably based on silicon, for a photovoltaic application. Preferably, it is based on amorphous silicon or on a silicon compound (for example SiC, SiO, SiGe, etc.). It has a thickness of between 20 and 800 nm, preferably between
• the elementary photoelectric device 6, or bottom cell is a semiconductor, preferably based on silicon, for a photovoltaic application. Preferably, it is based on crystalline silicon or microcrystalline silicon or silicon-germanium or a silicon compound enabling the energy bandgap to be reduced with respect to amorphous silicon.
• the elementary photoelectric device 4, or top cell is based on amorphous silicon and the other elementary photoelectric device 6, or bottom cell, is based on microcrystalline silicon.
• the elementary cells 4 and 6 are deposited by processes known to those skilled in the art.
• a PECVD (plasma-enhanced chemical vapour deposition) process is used (cf. Fischer, Caribbeanl, Selvan, Vaucher, Platz, Hof,
• an intermediate layer 5 is deposited that establishes a suitable morphology for the growth of the bottom elementary cell 6.
• the intermediate layer 5 consists of a layer of a material chosen from the group comprising zinc oxide, doped silicon oxides, doped porous silicon oxides, tin oxide, indium oxide, doped silicon carbide, doped amorphous silicon, doped microcrystalline silicon and combinations thereof.
• doped silicon oxide is used, the refractive index of which is less than that of silicon and is between 1.3 and 2.5.
• the intermediate layer 5 has a thickness of between 10 nm and
• the surface morphology of the bottom face 11 of the intermediate layer 5, as defined above, may be obtained by the very nature of its fabrication process. To do this, during the step of depositing the intermediate layer 5, a one step process for depositing the intermediate layer 5 is used that makes it possible to obtain a planarized surface corresponding to the required surface morphology of the bottom face 11.
• This process uses one of the techniques chosen from the group comprising sputtering (cf. J. Thornton, Vac. Sci. Technol. A, Volume 4, Issue 6, pp. 3059-3065, 1986), dip coating, spin coating, or plasma-enhanced chemical vapour deposition with deposition parameters that generate strong competition between deposition and etching of the layer (cf. Dalakos,
• Ry is not required, but only the angular morphology of the elementary surfaces as defined above.
• the surface morphology of the bottom face 11 of the intermediate layer 5, as defined above, may be obtained by carrying out, after said intermediate layer 5 has been deposited, an additional step of evening the surface of said bottom face 11 of the intermediate layer 5 in order to obtain the required surface morphology of the bottom face 11.
• the step of depositing the intermediate layer 5 may use conventional deposition processes, such as evaporation, sputtering, dip coating and chemical vapour deposition.
• PECVD plasma-enhanced chemical vapour deposition
• the additional surface evening step uses one of the techniques chosen from the group comprising chemical-mechanical polishing (cf. J. Benedict et al., Proc. Mat. Res. Soc. Symp. 254, 1992), chemical etching (for example using HCI or HNO3 for the ZnO intermediate layers or using HF for the silicon-based intermediate layers), plasma treatment (cf. WO
• the "micromorph" cell according to the invention has an intermediate layer with faces having surface morphologies making it possible to optimally reconcile the morphologies required by each of the individual cells and thus to obtain a higher-performance device.
• the present description is based on a device comprising two elementary cells.
• the device according to the invention may comprise more than two elementary cells, at least two cells of which are separated by an intermediate layer according to the invention.
• Example 2 with an intermediate layer according to the invention (Example 2).
• the other elements of the cells are identical.
• the elementary cells are composed of a top cell 4 made of amorphous silicon and a bottom cell 6 made of microcrystalline silicon (cf. Fischer,
• the substrate 2 used is glass (Schott AF 45) and the texture comprising highly inclined elementary surfaces is given by the first conducting ZnO layer 3 (front contact) which is deposited by LPCVD (low-pressure chemical vapour deposition) (cf.
• the top cell 4 has a thickness of 300 nm and the bottom cell 6 a thickness of 3000 nm.
• the second conducting ZnO layer 7 (rear contact) is deposited by LPCVD (low-pressure chemical vapour deposition) on which a white dielectric that serves as rear reflector is applied (cf. Meier, Kroll, Spitznagel, Benagli, Roschek, Pfanner, Ellert, Androutsopoulos, Huegli, Buechel, Buechel, Nagel, Feitknecht and Bucher, « Progress in up-scaling of thin film silicon solar cells by large-area PECVD KAI systems » Proc. of the 31th IEEE Photovoltaic Specialist Conference, Lake Buena Vista, FL, USA, pp. 1464-1467, January, 2005).
• LPCVD low-pressure chemical vapour deposition
• the standard-type intermediate layer consists of a layer of SiO x 150 nm in thickness deposited by PECVD (cf. Buehlmann, Bailat, Domine, Billet, Meillaud, Feltrin and BaIMf, APL 91 , 143505, 2007).
• the intermediate layer having the morphology according to the invention consists of an SiO x layer 150 nm in thickness deposited by PECVD and the bottom face 11 of which has undergone, after the deposition, a chemical- mechanical polishing operation so as to even its surface. This chemical- mechanical polishing (CMP) operation is carried out using a cloth (Article No.
• the surface roughness Ry of the top face 10 of the interface in the example 2 of invention is 1 000 nm
• the surface roughness Ry of the bottom face 11 of the interface in the example 2 of the invention is 670 nm, which is greater than the value of 150 nm, known from US 2002/0011263 to deteriorate the electrical properties of the cell.
• the surface roughness Ry of the bottom face 11 is lower than the surface roughness Ry of the top face 10 in the example 2 of the invention, contrary to the teaching of US 6,825,408.
• top and bottom faces of the standard intermediate layer have the same ⁇ 90 , in such a way that the difference (cootop - coobottom) is of 0°.
• V oc The open-circuit voltage (V oc ) and the fill factor (FF) are extracted from the characteristic current-voltage (I-V) curve under illumination with an AM1.5G solar spectrum.
• the short-circuit current density (J sc ) is calculated from the measurement of the external quantum efficiency (EQE) by integrating, over the spectrum from 350 to 1100 nm, the product of the EQE multiplied by the incident photon flux for the solar spectrum defined by AM1.5G.
• the conversion efficiency ( ⁇ ) is calculated by multiplying V oc , FF and J sc .
• the results show, on the one hand, that the "micromorph" cell according to the invention is functional.
• the benefit obtained using an intermediate layer having the surface morphology according to the invention consists of an increase in the fill factor (FF), while maintaining the optical characteristics (Jsc), manifested by an increase in the conversion efficiency ⁇ from 11.2% to 12.1 %, i.e. an 8% improvement.

Landscapes

• Engineering & Computer Science (AREA)
• General Physics & Mathematics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Electromagnetism (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Life Sciences & Earth Sciences (AREA)
• Crystallography & Structural Chemistry (AREA)
• Chemical & Material Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Sustainable Development (AREA)
• Sustainable Energy (AREA)
• Photovoltaic Devices (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (2)

Family

ID=40568162

Family Applications (1)

Country Status (5)

Families Citing this family (9)

Citations (4)

Family Cites Families (15)

• 2008
  • 2008-11-19 EP EP08169424A patent/EP2190024A1/fr not_active Withdrawn
• 2009
  • 2009-11-18 WO PCT/EP2009/065369 patent/WO2010057907A2/en active Application Filing
  • 2009-11-18 EP EP09759709.0A patent/EP2351092B1/en not_active Not-in-force
  • 2009-11-18 CN CN2009801459125A patent/CN102217080B/zh not_active Expired - Fee Related
  • 2009-11-18 JP JP2011543774A patent/JP2012509603A/ja active Pending
  • 2009-11-18 US US13/130,205 patent/US8368122B2/en not_active Expired - Fee Related

Patent Citations (4)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events