WO2010043350A1 - Dispositif de cristallisation de métaux non ferreux - Google Patents

Dispositif de cristallisation de métaux non ferreux Download PDF

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Publication number
WO2010043350A1
WO2010043350A1 PCT/EP2009/007296 EP2009007296W WO2010043350A1 WO 2010043350 A1 WO2010043350 A1 WO 2010043350A1 EP 2009007296 W EP2009007296 W EP 2009007296W WO 2010043350 A1 WO2010043350 A1 WO 2010043350A1
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WO
WIPO (PCT)
Prior art keywords
cooling
plate
cooling plate
cooling channels
channels
Prior art date
Application number
PCT/EP2009/007296
Other languages
German (de)
English (en)
Inventor
Rolf-Ulrich Spiess
Marco Balzer
Stefan Eich
Original Assignee
Pva Tepla Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pva Tepla Ag filed Critical Pva Tepla Ag
Publication of WO2010043350A1 publication Critical patent/WO2010043350A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the invention relates to a device for melting and / or crystallizing non-ferrous metals, in particular of silicon. Furthermore, the invention relates to a cooling plate for heat removal from a melt, and a method for producing such a cooling plate. Furthermore, the invention relates to a use of the device according to the invention for the production of multicrystalline silicon according to the vertical gradient freeze method, in particular for applications in photovoltaics.
  • non-ferrous metals such as silicon
  • quartz molds It is known to melt non-ferrous metals, such as silicon, into quartz molds and to crystallize them to produce multicrystalline silicon blocks for further processing in photovoltaics.
  • heat is removed by radiating heat on the outer walls of the mold and the surface of the silicon.
  • the silicon must be cooled as uniformly as possible, since otherwise strong thermal stresses may develop, which promote dislocation formation and dislocation multiplication and cause cracks in the solidified, blocky silicon.
  • uneven cooling would favor back diffusion of impurities, especially metals, from edge regions into the interior of the block-shaped silicon. Both the dislocation and the back-diffused foreign substances act as recombination centers and reduce the photovoltaic efficiency of solar cells.
  • German patent DE 10 2005 013 410 B4 discloses a device and a method for directional solidification of semiconductor materials.
  • the container for holding the liquid semiconductor material has a bottom, wherein a controllable cooling element is provided for dissipating heat from the bottom.
  • a controllable heating element is provided for supplying heat to the ground to obtain a homogeneous temperature profile at the bottom.
  • the disadvantage is that a significant part of the heat generated by the bottom heater is delivered to the cooling fluid.
  • An object of the invention is to design a cooling plate so that a comparable temperature profile in the ground can be achieved with significantly reduced heating power.
  • the cooling plate according to the invention is used for heat removal from a melt, in particular a melt of non-ferrous metal, such as silicon.
  • cooling channels are arranged, which serve for the passage of a cooling fluid.
  • the cooling channels are arranged running in at least a first extension direction of the cooling plate, substantially parallel to each other.
  • each cooling channel has a channel cross section, wherein the cross section of the channel is to be understood as the cross section through which the cooling fluid flows in the direction of flow.
  • the channel cross sections of the cooling channels add up to an overall cross section of the cooling plate.
  • the total cross section is uneven over at least distributed a second direction of extension of the cooling plate.
  • the distribution of the total cross section of the cooling channels over the second extension direction of the cooling plate could also be referred to as inhomogeneous in this sense.
  • a uniform distribution of the total cross section is to be understood to mean an equidistant arrangement of cooling channels of the same cross section and the same cross sectional shape.
  • a non-uniform distribution is accordingly at a deviation from such an arrangement.
  • An advantage of the cooling plate according to the invention is that with the uneven distribution of the total cross-section and the ability to dissipate heat energy from the melt is not evenly distributed over the surface of the cooling plate.
  • the cooling plate according to the invention is thus advantageously adaptable to the conditions of a melt to be crystallized whose heat radiation is just as little distributed homogeneously over a bottom of a casting mold. Overall, such a comparatively homogeneous temperature profile over the ground can be achieved.
  • the crucible is also referred to as a quartz mold or Quarzguttie- gel.
  • the cooling plate according to the invention has a flat basic shape, ie it extends substantially in a plane which is defined by two main directions of extension of the cooling plate.
  • the first extension direction of the cooling plate and the second extension direction of the cooling plate substantially correspond to the main extension directions, ie, the first extension direction preferably aligned perpendicular to the second direction of extent.
  • One surface of the cooling plate extends in the plane of the two main directions of extension.
  • a larger proportion of the total cross section is arranged in a central region of the cooling plate than in an edge region of the cooling plate.
  • the central area of the cooling plate is to be understood as the area arranged around a center or area center of gravity of the cooling plate, which area is in particular spaced from the edge of the cooling plate.
  • the edge region in the sense of the invention is precisely that region of the cooling plate surface which lies outside the central region and generally extends as far as the edges of the cooling plate.
  • the central region and the edge region preferably have roughly comparable partial surfaces of the cooling plate surface.
  • the geometric shape of the central region is optionally dependent on the basic shape of the respective mold.
  • the total cross-section is distributed unevenly over the first direction of extension of the cooling plate.
  • an uneven or inhomogeneous distribution of the total cross-section in the first and the second direction of extent advantageously results in a two-dimensional, inhomogeneous distribution of the cross-section and thus the ability to dissipate heat from de melt.
  • cooling channels are also arranged running in the second extension direction of the cooling plate. These also serve for the passage of the cooling fluid, wherein between see the cooling channels of the first direction and the cooling ducts of the second direction of extension is a preferably thin, the heat transfer little obstructing material barrier, the strength of which is sufficient to separate the respective cooling channels fluid-tight from each other.
  • the channel cross sections of the cooling channels extending in the second extension direction add to form an overall cross section of the second extension direction, wherein this total cross section of the second extension direction is distributed unevenly over the first extension direction of the cooling plate.
  • a non-uniform distribution of the channel cross sections in the first and in the second direction of extension so over the surface of the cooling plate. It is thus advantageous to provide a cooling plate which has a targeted, uneven distribution of the amount of heat which can be dissipated via it.
  • the cooling plate can thus be adapted to the temperature conditions of a crystallizing melt in terms of their area distribution, so that ultimately a comparatively homogeneous temperature profile in the bottom of the mold can be achieved.
  • a two-dimensional distribution of the overall cross-section can alternatively be realized according to a further preferred embodiment of the invention, wherein the channel cross-sections of at least a part of the cooling channels in the flow direction of the cooling fluid at least from the edge region to the central region are formed growing.
  • running cooling channels can be omitted if necessary.
  • a distribution of the total cross section over the first and / or the second extension direction of the cooling plate can be specified by means of mathematical expressions.
  • the term distribution of the total cross section and distribution of the channel cross sections is used to mean the same, since the distribution of the total cross section results from the distribution of the channel cross sections.
  • the distribution consists in the first extension direction and / or in the second extension direction, without being discussed in detail in each case.
  • This idealization with a finite plurality of cooling channels is only approximately achievable.
  • the channel cross-section will always gradually decrease from the center of the cooling plate to an edge of the cooling plate, preferably continuously.
  • the cross sections of the cooling channels which are arranged in the central region, or run through it, are larger than the cross sections of those cooling channels, which are arranged in the edge region.
  • the cross section of the cooling channels decreases gradually from the center of the cooling plate toward its edges, preferably continuously.
  • the Cross sections of the cooling channels substantially the same, wherein in the central region more cooling channels are arranged, as in the edge region.
  • a distance between the cooling channels increases gradually from the center of the cooling plate to the edges of the cooling plate, preferably continuously.
  • the cooling channels can be flowed through in a countercurrent process. This means that at least part of the
  • Cooling channels is formed so that the cooling fluid flows through them in an opposite direction than other cooling channels. As a result, the ability to absorb heat along the flow direction of the fluid, or in the direction of extension of the cooling channels is homogenized.
  • a first group of the cooling channels can be flowed through in the first extension direction and a second group of the cooling channels can be flowed through in the opposite direction to the first extension direction. Additionally or alternatively, preferably, a first group of the cooling channels in the second
  • Envelope direction can be flowed through and a second group of cooling channels can be flowed through in the opposite direction to the second direction of extent.
  • two adjacent cooling channels are flowed through in each case in different directions.
  • one channel of the first group and one channel of the second group are preferably arranged alternately. This can for example be realized by the individual cooling channels are joined together to form a meandering channel.
  • the cooling fluid flows through the cooling plate only once.
  • the cooling plate preferably on suitable supply devices on the input side of the cooling channels and corresponding discharge devices on the outflow side of the cooling channels.
  • the collecting channel is particularly preferably designed so large that pressure fluctuations are compensated and, if possible, all connected to the collecting channel cooling channels are equally supplied with cooling fluid under appropriate operating pressure.
  • the cooling fluid is preferably supplied to the collecting channel in its middle region, so that advantageously a pressure drop which can not be completely avoided over the length of the collecting channel results in the cooling channels arranged in the central region or flowing through them having a higher pressure be supplied to the cooling fluid, as the running in the edge region cooling channels.
  • the cooling fluid After flowing through the cooling plate, the cooling fluid can be passed over a heat exchanger, in order to then again flow through the cooling plate.
  • the cooling fluid circuit is open, i. The cooling plate is continuously flowed through with new cooling fluid, which after the
  • Flow is preferably collected for later reuse.
  • the cooling channels are preferably made substantially rectangular, wherein the converted hydraulic diameter determines which amount of heat can be dissipated with the preferably gaseous cooling fluid.
  • the cooling channels are particularly preferably different in terms of their width and have a constant depth.
  • the cooling plate is preferably made of graphite.
  • Another object of the invention relates to a device for melting and / or crystallizing non-ferrous metals and / or semiconductor material, wherein the device comprises a cooling plate according to the invention.
  • the device comprises a cooling plate according to the invention.
  • such a device also has a boiler, an insulation, a heating device for supplying heat to the non-ferrous metal and / or semiconductor material and a crucible system, wherein the cooling plate is arranged below the crucible.
  • the heat dissipation via the cooling plate is preferably controllable.
  • the cooling fluid used is preferably gaseous. Preferably, nitrogen, argon or helium or a mixture of at least two of these gases is used.
  • the cooling plate is preferably not active, d. H. no cooling fluid is circulated through the cooling channels.
  • the heating device preferably has no so-called bottom heater under the crucible.
  • the cooling plate according to the invention can certainly be operated with an existing bottom heater. Already there is an advantage to an energy saving.
  • Another object of the invention relates to a manufacturing process for a cooling plate according to the invention, wherein the cooling plate is composed of a plurality of components and wherein the cooling channels are introduced into a first plate in the first direction of extent.
  • the concrete The method of adjustment is essentially dependent on the cooling channel cross-sectional shape. It is conceivable, inter alia, rectangular, square and round cooling channel cross-sections, with cooling channels with a round cross-section are usually introduced by drilling into the plate. Regardless of the shape of the cooling channel cross sections, one or more collection and / or distribution channels are attached to the first plate, which interconnect at least groups of the cooling channels.
  • channels are machined from a surface of the first plate in the first direction of extension, preferably milled.
  • the first plate is then connected to a second plate so that the channels are covered.
  • the described process preferably produces cooling channels with a rectangular cross-section.
  • the production is significantly simplified, for example, compared to the drilling of cooling channels.
  • the structure eliminates several plates arranged one above the other.
  • connection of the plates with each other or with the collection and / or distribution channels can be made detachable or insoluble.
  • the plates are preferably held together in a fluid-tight manner by force and / or positive connections by means of adhesives or by means of seals and tension or tension anchors. Tongue and groove systems or screwed connections can also be provided.
  • the method are from a further surface of the first plate and / or from a surface of the second plate in the second extension direction worked out channels, preferably milled and then the first plate and / or the second plate connected to at least one third plate.
  • the first extension direction is preferably arranged perpendicular to the second extension direction.
  • the cooling plate thus produced has advantageously transverse to each other cooling channels in at least two different levels. The person skilled in the art recognizes that a multiplicity of planes with cooling channels can be realized in a cooling plate in the sense of the invention.
  • the invention further relates to a use of a device according to the invention for the production of multicrystalline silicon according to the vertical gradient freeze method, in particular for applications in photovoltaics.
  • FIG. 1 shows a basic schematic structure of an apparatus for melting and / or crystallizing non-ferrous metals
  • FIGS. FIGS. 2 and 3 are diagrams for explaining the operation of the device of FIG. 1;
  • Fig. 3 is a schematic representation of a cooling plate according to the invention;
  • FIGS. 5a, 5b and 5c are schematic sectional views of various embodiments of the cooling plate according to the invention.
  • the system consists of a boiler (13), an insulation (not shown), a heater (11), a crucible (12) and a cooling plate (1).
  • the boiler (13) is usually made of stainless steel. However, it is also possible to make it from mild steel.
  • the boiler consists of a central part, a bottom and a lid (not shown). The boiler can for example be double-walled and water-cooled. A loading and unloading of the boiler is usually done on the ground, which can be drained and moved out.
  • a graphite resin felt insulation (not shown) which shields the boiler wall from the heat generated during melting and ensures that the energy introduced remains inside the system during reflow.
  • one to three heaters of the heater (11) are arranged, here for example a ceiling, a bottom and a peripheral heater.
  • the heaters are resistance-heated graphite heating elements.
  • the heaters serve both to melt non-ferrous metals and to control crystallization.
  • the heaters are arranged so that the greatest possible uniformity of the temperature during melting can be achieved.
  • the heating elements (11) are arranged so that it is possible to control the solidification by shutting down the heaters.
  • the temperature is preferably lowered linearly.
  • the ceiling heater When melting, the largest share is provided by the ceiling heater arranged above, as it radiates directly onto the non-ferrous metal.
  • the perimeter heater consists of four individual parts connected at the corners. This connection is designed so that there is no deterioration of the temperature profile in the corners.
  • the peripheral heater serves to keep the crystallization front of the non-ferrous metal as flat as possible.
  • a concave or convex crystallization front should be avoided as these block shapes result in more waste in the further processing of the crystallized block.
  • the bottom heater is arranged here between the cooling plate (1) and the crucible bottom. When melting, the bottom heater leads heat through the bottom of the crucible and thus supports the melting process.
  • a cooling plate according to the prior art, for example, a water-cooled copper cooling plate, which dissipates heat throughout the process. This is desirable during crystallization, but very disadvantageous during melting.
  • the crystallization phase is initiated by bringing the bottom heater to a temperature below the solidification temperature of the non-ferrous metal.
  • Si Licium example starts ren to crystallize at 1410 0 C.
  • this temperature is crucial to reach this temperature as uniformly as possible over the entire cooking surface.
  • the soil To lower the temperature further. The heat released during crystal growth is removed by means of the cooling plate.
  • the crucible system of the device according to the invention consists of a multi-part support crucible and a crucible.
  • the crucible is preferably made of coated fused silica, thereby preventing caking of the silicon.
  • the support crucible made of graphite plates is necessary because the crucible softens when melting.
  • a process for the production of silicon blocks for the production of solar wafers according to the so-called "vertical gradient freeze” (VGF) process is in principle a remelting process, in which first the crucible is filled with raw silicon. This can be present for example as granules or as piece goods. After filling the crucible, the vessel (13) is evacuated and then charged with a process gas, for example with argon. The raw silicon is at a
  • melt temperature of 1450 0 C and kept the melt at this temperature for some time to bring existing impurities to the surface of the melt.
  • the temperature of the bottom heater is set to 1390 0 C. It comes to the germination and crystallization of the melt at the bottom of the crucible. The temperatures of all heaters are lowered until all of the silicon has solidified. Subsequently, the temperature is usually raised again in a tempering step.
  • FIG. 2 shows a diagram of an energy flow of the heating device (11, FIG. 1).
  • step (100) electrical energy is conducted into the heater.
  • step (101) this energy is inductively converted into heat in the heater.
  • the melting of the silicon is step (102).
  • step (103) the solidification is initiated in step (103).
  • step (104) the heat of crystallization is dissipated by transferring the heat energy to the cooling fluid, step (105).
  • FIG. 3 shows the same energy flow through the individual components. The electrical energy of one
  • Power supply (106) passes through a transformer (107) in the heater (11).
  • the resistance-heated heaters are then heated by the electric current and melt all of the silicon. After melting, the crystallization is controlled by the shutdown of the heater, the cooling plate (1) then performs the last energy.
  • a cooling plate (1) according to the invention is shown schematically. It is preferably a gas-cooled graphite plate.
  • the cooling plate (1) extends in a plane which is spanned by a first extension direction x and a second extension direction y of the cooling plate (1).
  • first extension direction x cooling channels (2) extend through the cooling plate (1), wherein the cooling channels indicated by the reference numeral (21) are flowed through in an opposite direction, such as the designated with the reference numeral (20) cooling channels.
  • the cooling plate (1) also in its second extension direction y
  • the cooling channels indicated by the reference numeral (23) are flowed through in the opposite direction, as indicated by the reference numeral (22). marked cooling channels.
  • both the counterflow principle for heat exchange is realized, as well as crossover cooling channels.
  • the channel cross sections of the individual cooling channels (2) add up to form an overall cross section which, according to the invention, is distributed unevenly over the second extension direction y or over the second extension direction y and the first extension direction x.
  • the total cross section or the channel cross sections have a significant influence on the amount of heat dissipatable by means of the cooling plate (1).
  • the ability to dissipate heat is therefore also distributed unevenly over the surface of the cooling plate (1).
  • the heat of crystallization which is likewise distributed non-uniformly over the bottom surface of the crucible, can be compensated so that a homogeneous temperature profile results.
  • Due to the cooling plate according to the invention temperature differences in the germination zone of less than 10 ° Kelvin can be achieved.
  • no bottom heater is used for this purpose.
  • advantageously higher growth rates of the silicon crystal of, for example, 35 millimeters per hour can be achieved.
  • the cooling plate (1) according to the invention can therefore dissipate a greater amount of heat in the central region (3) than in the edge region (4).
  • a larger proportion of the total cross section is arranged in the central region (3) than in the edge region (4).
  • the cooling channel indicated by the reference numeral (24) has a larger channel cross-section, as the designated by the reference numeral (25) channel, which lies in the edge region (4).
  • the cooling channels located between the cooling channels denoted by (24) and (25) can, for example, have the same channel cross-section as the cooling channel (24) or the cooling channel (25).
  • the channel cross-section is preferably progressively smaller from the inside to the outside, cf. FIG. 5a.
  • FIGS. 5a, 5b and 5c show diagrammatically cross sections through two different embodiments of the cooling plate (1) according to the invention.
  • the cross section of the cooling channels (2) according to FIG. 5a gradually decreases outwardly from the central, largest cooling channel with the width (26), wherein the outermost cooling channel (2) has the width (27), which clearly is less than the width (26) of the largest cooling channel.
  • the depth of the cooling channels is preferably not varied.
  • Fig. 5b an alternative embodiment is shown in which all the cooling channels (2) have the same channel cross-section.
  • the overall cross-section is nevertheless non-uniformly distributed over the first extension direction x or the second extension direction y (see FIG. 2), since intermediate spaces (32) between the cooling channels (2) become larger from the inside to the outside.
  • the cooling plate (1) according to the invention consists of two graphite plates (30, 31), wherein the cooling channels (2) are milled into the first plate (30).
  • the second plate (31) serves to cover the milled cooling channels (2).
  • FIG 5c is a cooling plate (1) with cooling channels (2) with a circular cross-section in the first plate (30), wherein the cooling channels have a comparable distribution, as in Figure 5b.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)

Abstract

L'invention concerne un dispositif de fusion et/ou cristallisation de métaux non ferreux, en particulier de silicium et une plaque de refroidissement destinée à évacuer la chaleur d'une masse fondue, un procédé de fabrication d'une telle plaque de refroidissement et l'utilisation du dispositif pour fabriquer du silicium multicristallin, en particulier pour des applications dans le domaine des technologies photovoltaïques, selon le procédé de congélation à gradient vertical.
PCT/EP2009/007296 2008-10-13 2009-10-09 Dispositif de cristallisation de métaux non ferreux WO2010043350A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200810051492 DE102008051492A1 (de) 2008-10-13 2008-10-13 Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen
DE102008051492.6 2008-10-13

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DE102010014724B4 (de) * 2010-04-01 2012-12-06 Deutsche Solar Gmbh Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
US20120280429A1 (en) * 2011-05-02 2012-11-08 Gt Solar, Inc. Apparatus and method for producing a multicrystalline material having large grain sizes
DE102011076860B4 (de) * 2011-06-01 2016-01-14 Forschungsverbund Berlin E.V. Verfahren zur gerichteten Kristallisation von Ingots
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
CN107236988B (zh) * 2017-07-12 2020-03-03 晶科能源有限公司 一种多晶气冷硅铸锭炉

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