WO2010028112A3 - Points quantiques, procédés de production de points quantiques et procédés d'utilisation de points quantiques - Google Patents

Points quantiques, procédés de production de points quantiques et procédés d'utilisation de points quantiques Download PDF

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Publication number
WO2010028112A3
WO2010028112A3 PCT/US2009/055831 US2009055831W WO2010028112A3 WO 2010028112 A3 WO2010028112 A3 WO 2010028112A3 US 2009055831 W US2009055831 W US 2009055831W WO 2010028112 A3 WO2010028112 A3 WO 2010028112A3
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dots
methods
making
dots
quantum
Prior art date
Application number
PCT/US2009/055831
Other languages
English (en)
Other versions
WO2010028112A2 (fr
Inventor
Andrew Smith
Shuming Nie
Brad A. Kairdolf
Original Assignee
Emory University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011526182A priority Critical patent/JP2012501863A/ja
Priority to RU2011112683/28A priority patent/RU2497746C2/ru
Priority to MX2011002030A priority patent/MX2011002030A/es
Priority to CA2735011A priority patent/CA2735011A1/fr
Priority to CN2009801344901A priority patent/CN102144279A/zh
Priority to EP09812200A priority patent/EP2335272A4/fr
Application filed by Emory University filed Critical Emory University
Priority to AU2009288017A priority patent/AU2009288017A1/en
Priority to US13/060,513 priority patent/US9073751B2/en
Priority to BRPI0918595A priority patent/BRPI0918595A2/pt
Publication of WO2010028112A2 publication Critical patent/WO2010028112A2/fr
Publication of WO2010028112A3 publication Critical patent/WO2010028112A3/fr
Priority to IL211381A priority patent/IL211381A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles

Abstract

Les modes de réalisation de la présente invention portent sur : des procédés de fabrication d'un point quantique, des points quantiques et similaires.
PCT/US2009/055831 2008-09-03 2009-09-03 Points quantiques, procédés de production de points quantiques et procédés d'utilisation de points quantiques WO2010028112A2 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
RU2011112683/28A RU2497746C2 (ru) 2008-09-03 2009-09-03 Квантовые точки, способы получения квантовых точек и способы использования квантовых точек
MX2011002030A MX2011002030A (es) 2008-09-03 2009-09-03 Puntos cuanticos, metodos para fabricar puntos cuanticos y metodos de uso de los puntos cuanticos.
CA2735011A CA2735011A1 (fr) 2008-09-03 2009-09-03 Points quantiques, procedes de production de points quantiques et procedes d'utilisation de points quantiques
CN2009801344901A CN102144279A (zh) 2008-09-03 2009-09-03 量子点、制造量子点的方法以及使用量子点的方法
EP09812200A EP2335272A4 (fr) 2008-09-03 2009-09-03 Points quantiques, procedes de production de points quantiques et procedes d'utilisation de points quantiques
JP2011526182A JP2012501863A (ja) 2008-09-03 2009-09-03 量子ドット、量子ドットの製造方法、及び量子ドットの使用方法
AU2009288017A AU2009288017A1 (en) 2008-09-03 2009-09-03 Quantum dots, methods of making quantum dots, and methods of using quantum dots
US13/060,513 US9073751B2 (en) 2008-09-03 2009-09-03 Quantum dots, methods of making quantum dots, and methods of using quantum dots
BRPI0918595A BRPI0918595A2 (pt) 2008-09-03 2009-09-03 pontos quânticos, métodos de fabricação de pontos quânticos, e métodos de utilização pontos quânticos
IL211381A IL211381A0 (en) 2008-09-03 2011-02-23 Quantum dots, methods of making quantum dots, and methods of using quantum dots

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9380108P 2008-09-03 2008-09-03
US61/093,801 2008-09-03

Publications (2)

Publication Number Publication Date
WO2010028112A2 WO2010028112A2 (fr) 2010-03-11
WO2010028112A3 true WO2010028112A3 (fr) 2010-05-27

Family

ID=41797844

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/055831 WO2010028112A2 (fr) 2008-09-03 2009-09-03 Points quantiques, procédés de production de points quantiques et procédés d'utilisation de points quantiques

Country Status (12)

Country Link
US (1) US9073751B2 (fr)
EP (1) EP2335272A4 (fr)
JP (1) JP2012501863A (fr)
KR (1) KR20110050704A (fr)
CN (1) CN102144279A (fr)
AU (1) AU2009288017A1 (fr)
BR (1) BRPI0918595A2 (fr)
CA (1) CA2735011A1 (fr)
IL (1) IL211381A0 (fr)
MX (1) MX2011002030A (fr)
RU (1) RU2497746C2 (fr)
WO (1) WO2010028112A2 (fr)

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RU2539757C1 (ru) * 2013-07-04 2015-01-27 Открытое акционерное общество "Концерн "Созвездие" Способ формирования наноточек на поверхности кристалла

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JP5329501B2 (ja) * 2010-09-06 2013-10-30 シャープ株式会社 蛍光体
CN101941682B (zh) * 2010-09-17 2012-11-21 朱明强 微波辅助合成CdSe量子点的有机相制备方法
WO2012134629A1 (fr) * 2011-04-01 2012-10-04 Qd Vision, Inc. Points quantiques, procédé et dispositifs
EP2952210A3 (fr) 2011-04-07 2016-03-16 Emory University Compositions comprenant des fractions de liaison de saccharide et procédés destinés à une thérapie ciblée
WO2013022499A2 (fr) * 2011-04-22 2013-02-14 Emory University Particules métalliques à revêtement polymère et utilisations
WO2012158832A2 (fr) 2011-05-16 2012-11-22 Qd Vision, Inc. Procédé de préparation de semi-conducteurs nanocristallins
EP2776367B1 (fr) * 2011-11-10 2016-09-28 Universiteit Gent Synthèse de nanomatériaux
WO2013078245A1 (fr) 2011-11-22 2013-05-30 Qd Vision, Inc. Procédé de fabrication de points quantiques
WO2013078242A1 (fr) 2011-11-22 2013-05-30 Qd Vision, Inc. Procédés de revêtement de nanocristaux semi-conducteurs
WO2013078247A1 (fr) 2011-11-22 2013-05-30 Qd Vision, Inc. Procédés de revêtement de nanocristaux semi-conducteurs, nanocristaux semi-conducteurs et produits les comprenant
WO2013078249A1 (fr) 2011-11-22 2013-05-30 Qd Vision Inc. Procédé de fabrication de points quantiques
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
KR101960469B1 (ko) 2012-02-05 2019-03-20 삼성전자주식회사 반도체 나노결정, 그의 제조 방법, 조성물 및 제품
KR101685238B1 (ko) * 2012-11-07 2016-12-12 포항공과대학교 산학협력단 양자점-고분자-층상 구조 세라믹 복합체 합성
WO2014159860A1 (fr) * 2013-03-14 2014-10-02 Nanosys, Inc. Ligands alkyl-acides pour nanocristaux
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
WO2014209154A1 (fr) * 2013-06-27 2014-12-31 Optogan - Organic Lightning Solution, Llc (Optogan-Osr, Llc) Élément électroluminescent organique ayant la couche de rayonnement contenant des points quantiques à une surface modifiée
US10858467B2 (en) * 2013-10-28 2020-12-08 Joseph Laurino Conducting polymer, 1-octadecene, polymer with 2,5 furnadione, metal salts
RU2566159C1 (ru) * 2014-09-03 2015-10-20 Государственное унитарное предприятие "Институт нефтехимпереработки Республики Башкортостан" (ГУП "ИНХП РБ") Способ получения низкотемпературного портландцементного клинкера
RU2607405C2 (ru) * 2015-03-06 2017-01-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" Способ синтеза наночастиц полупроводников
CN107636112A (zh) * 2015-05-28 2018-01-26 富士胶片株式会社 含有量子点的组合物、波长转换部件、背光单元及液晶显示装置
US10246634B2 (en) * 2015-10-26 2019-04-02 Samsung Electronics Co., Ltd. Quantum dot having polymeric outer layer, photosensitive compositions including the same, and quantum dot polymer composite pattern produced therefrom
US11226336B2 (en) * 2016-07-25 2022-01-18 The Board Of Trustees Of The University Of Illinois Compact and homogeneous quantum dots and methods of making the same
KR102601102B1 (ko) 2016-08-09 2023-11-10 삼성전자주식회사 조성물, 이로부터 제조된 양자점-폴리머 복합체 및 이를 포함하는 소자
CN106905497B (zh) * 2017-03-22 2021-01-12 京东方科技集团股份有限公司 量子点复合物、中间体及其制备方法和应用
WO2019115575A1 (fr) * 2017-12-15 2019-06-20 Merck Patent Gmbh Composition comprenant une nanoparticule électroluminescente semi-conductrice
RU2685669C1 (ru) * 2018-08-01 2019-04-22 федеральное государственное бюджетное образовательное учреждение высшего образования "Алтайский государственный университет" Способ получения коллоидных квантовых точек селенида цинка в оболочке хитозана
KR102041382B1 (ko) * 2018-11-07 2019-11-06 국민대학교산학협력단 닥터 블레이드를 이용한 양자점 태양전지의 제조 방법 및 이로부터 제조된 양자점 태양전지
US20210363408A1 (en) * 2020-05-20 2021-11-25 University Of Wyoming Quantum dot nanofluids
KR102497991B1 (ko) 2020-11-25 2023-02-10 한국표준과학연구원 반도체 양자점의 생성과 크기 제어 방법 및 시스템
RU2766832C1 (ru) * 2021-03-22 2022-03-16 федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" Способ независимого управления размерами полупроводниковых квантовых точек А3В5
WO2023027609A1 (fr) * 2021-08-27 2023-03-02 Общество с ограниченной ответственностью "Сайтек Лабораторис" Marque fluorescente nanométrique à usages multiples et conjugués à base de celui-ci
WO2023076689A2 (fr) * 2021-11-01 2023-05-04 University Of Wyoming Nanofluides renfermant des boîtes quantiques

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Also Published As

Publication number Publication date
CN102144279A (zh) 2011-08-03
EP2335272A4 (fr) 2012-06-20
WO2010028112A2 (fr) 2010-03-11
US20110260111A1 (en) 2011-10-27
MX2011002030A (es) 2011-05-19
JP2012501863A (ja) 2012-01-26
CA2735011A1 (fr) 2010-03-11
RU2497746C2 (ru) 2013-11-10
EP2335272A2 (fr) 2011-06-22
US9073751B2 (en) 2015-07-07
IL211381A0 (en) 2011-04-28
RU2011112683A (ru) 2012-10-10
BRPI0918595A2 (pt) 2017-03-21
KR20110050704A (ko) 2011-05-16
AU2009288017A1 (en) 2010-03-11

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