WO2010020195A1 - Plasma processing apparatus, gas distribution device and gas delivery method - Google Patents

Plasma processing apparatus, gas distribution device and gas delivery method Download PDF

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Publication number
WO2010020195A1
WO2010020195A1 PCT/CN2009/073411 CN2009073411W WO2010020195A1 WO 2010020195 A1 WO2010020195 A1 WO 2010020195A1 CN 2009073411 W CN2009073411 W CN 2009073411W WO 2010020195 A1 WO2010020195 A1 WO 2010020195A1
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WO
WIPO (PCT)
Prior art keywords
distribution plate
gas
reaction chamber
distribution device
air supply
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Application number
PCT/CN2009/073411
Other languages
French (fr)
Chinese (zh)
Inventor
于大洋
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Publication of WO2010020195A1 publication Critical patent/WO2010020195A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Definitions

  • Plasma processing apparatus gas distribution apparatus, and gas delivery method
  • This invention relates to plasma processing techniques, and more particularly to a gas distribution apparatus for a plasma processing process.
  • the invention further relates to a plasma processing apparatus comprising the above gas distribution apparatus, and a method of delivering a gas to a reaction chamber of a plasma processing apparatus. Background technique
  • Plasma processing equipment is widely used in the field of microelectronics technology.
  • FIG. 1 is a schematic structural view of a typical plasma processing apparatus.
  • the plasma processing apparatus 1 generally includes a housing 11 having a reaction chamber 12 therein, and a top plate and a bottom portion of the reaction chamber 12 are respectively provided with an upper plate 13 and a lower plate 14; the lower plate 14 is The workpiece to be processed can be set at the top.
  • a vacuum obtaining means such as a dry pump is used to manufacture and maintain a state close to a vacuum in the reaction chamber 12.
  • gas is introduced into the reaction chamber 12 through the gas distribution device 16, and an appropriate radio frequency is input between the upper plate 13 and the lower plate 14, thereby activating the gas, thereby generating on the surface of the workpiece.
  • the plasma can undergo physicochemical reactions such as etching or deposition with the workpiece to obtain the desired etch pattern or deposited layer.
  • the by-product of the above physical chemical reaction is withdrawn from the reaction chamber 12 by the vacuum obtaining means.
  • FIG. 2 is a schematic structural view of a typical gas distribution device.
  • a typical gas distribution device 2 includes a generally circular support plate 21 that is centrally located at the top of the reaction chamber of the plasma processing apparatus and that can be fixedly mounted in a conventional manner with air intake at a central location Hole 211.
  • a showerhead electrode 23 is fixedly connected to the lower side of the support plate 21, and the connection portions of the two are kept sealed.
  • the hermetic seals here and below refer to a result, not a means; that is, no matter what specific technical means, the joint between the support plate 21 and the showerhead electrode 23 should not exhibit gas leakage).
  • a gas distribution chamber is formed between the two.
  • the intake port 211 is in communication with the gas distribution chamber.
  • the gas distribution chamber is provided with a plurality of spoilers 22 in a conventional manner, between each layer of the spoilers 22, and an appropriate distance between the spoiler 22 and the support plate 21 and the showerhead electrode 23;
  • the plate 22 includes a plurality of gas passages 221 that extend axially therethrough.
  • the gas passages 221 of each layer of the baffle 22 can be disposed offset from each other, the gas is forced to generate a certain lateral displacement when passing through the spoiler 22, so that the radial uniformity can be increased; As the number of layers of 22 increases, the number of lateral displacements of the gas also increases, so that the radial uniformity of the gas obtained at the upper surface 232 of the showerhead electrode 23 is also continuously increased.
  • a plurality of vent holes 231 are disposed in the shower electrode 23 for communicating with the lowermost small chamber in the gas distribution chamber and the reaction chamber below the shower electrode 23; gas may flow into the plasma from the vent 231 Processing the reaction chamber of the device.
  • Another object of the present invention is to provide a plasma processing apparatus including the above gas distribution device.
  • a third object of the present invention is to provide a detachment A method of transporting gas in a reaction chamber of a daughter processing apparatus.
  • the present invention provides a gas distribution device for a plasma processing apparatus, comprising: an upper distribution plate disposed above a reaction chamber of a plasma processing apparatus and having a first air inlet and a second An air intake hole, both of which extend substantially vertically through the upper distribution plate; a middle distribution plate disposed below the upper distribution plate; the intermediate distribution plate and the upper distribution plate have mutually isolated first chambers a chamber and a second chamber, the two being in communication with the first and second intake holes, respectively; the bottom of the middle distribution plate has a plurality of downwardly projecting bosses corresponding to each of the The bosses are each provided with a first air supply passage extending substantially vertically through the middle distribution plate and the boss, the top opening of the first air supply passage being located in the first chamber; the middle distribution plate further a second air supply passage having a top opening in the second chamber and vertically penetrating the middle distribution plate; a lower distribution plate disposed under the middle distribution plate, corresponding to the boss Board setting Each of the bosse
  • the first air inlet hole is located at a middle portion of the upper distribution plate; and the height of the bottom opening of the first air supply channel has a setting rule that: the height of the bottom opening of each of the first air supply channels is self-sufficient The middle portion of the distribution plate is gradually lowered toward the outer peripheral portion, or the height of the bottom opening of each of the first air supply passages is substantially the same.
  • the bottom opening of the first air supply passage is substantially the same as the height of the bottom opening of the through hole.
  • the bottom opening of the first air supply passage having the same height forms a circle or a polygon surrounding the center of the middle distribution plate.
  • boss is detachably mounted to the bottom of the middle distribution plate.
  • boss is screwed to the bottom of the middle distribution plate.
  • cross-sectional shape of the boss, the cross-sectional shape of the first air supply passage, and the cross-sectional shape of the through hole are both circular or all of a regular polygon.
  • the bottom opening of the first air supply channel and the bottom opening of the through hole are respectively Expanding from the axis direction.
  • the bottom of the outer wall of the boss is tapered.
  • the present invention also provides a plasma processing apparatus comprising the gas distribution device according to any of the above.
  • the present invention also provides a gas delivery method for transporting gas into a reaction chamber of a plasma processing apparatus, and gases that are susceptible to reaction enter the reaction chamber from different intake paths, respectively.
  • the intake path includes a first intake path and a second intake path adjacent to the first intake path; the number of the first intake path and the second intake path are multiple And the ends of the two are substantially evenly distributed on top of the reaction chamber.
  • an end of the second intake path surrounds an end of the first intake path.
  • the gas distribution device has two mutually isolated gas transport paths, that is, a first air inlet hole of the upper distribution plate, a first chamber between the upper distribution plate and the middle distribution plate, a first gas delivery path formed by the first air supply passage of the middle distribution plate, and a second air inlet hole of the upper distribution plate, a second chamber between the upper distribution plate and the middle distribution plate, and a middle distribution plate a second gas delivery path formed by the through holes of the two air supply passages and the lower distribution plate.
  • the first path is completely isolated from the second path, and the easily reactable gas can enter the reaction chamber of the plasma processing apparatus through different transport paths, thereby effectively avoiding the contact of the easily reactable gas in the gas distribution device.
  • the first air inlet hole is located in a middle portion of the upper distribution plate.
  • the height of the bottom opening of the first air supply passage gradually decreases from the central portion of the middle distribution plate to the outer peripheral portion, so that the distance from the first air supply passage to the lower electrode gradually increases from the middle portion to the outer peripheral portion of the middle distribution plate. Reduced. Since the gas enters the first chamber from the middle of the upper distribution plate, even if multiple sag is performed in the first chamber, the concentration of gas in the first air supply passage located in the middle portion is higher than that at the outer peripheral portion. The concentration of gas in the first air supply passage.
  • FIG. 1 is a schematic structural view of a typical plasma processing apparatus
  • FIG. 2 is a schematic structural view of a typical gas distribution device
  • FIG. 3 is a schematic structural view of a gas distribution device according to a specific embodiment of the present invention
  • FIG. 4 is a schematic plan view of the distribution plate shown in FIG. 3;
  • Figure 5 is a side elevational view of the distribution plate shown in Figure 3;
  • Figure 6 is a bottom view of the distribution plate shown in Figure 3;
  • Figure 7 is a schematic view showing the axis of the distribution plate shown in Figure 3;
  • Figure 8 is a cross-sectional structural view of the gas distribution device shown in Figure 3;
  • Figure 9 is a partial enlarged view of the portion A of Figure 8.
  • Figure 10 is a cross-sectional schematic view showing another embodiment of the gas distribution device provided by the present invention.
  • Figure 11 is a schematic view showing a specific mounting manner of the boss provided by the present invention. detailed description
  • FIG. 3 is a schematic structural view of a gas distribution device according to an embodiment of the present invention.
  • the upper distribution plate 31 is fixedly mounted horizontally below the top wall of the plasma processing apparatus and has a first intake aperture 311 and a second intake aperture 312, both of which extend generally vertically through the upper distribution plate 31.
  • the cross section of the first intake hole 311 and the second intake hole 312 may be circular or polygonal, and the number of both may be one or more.
  • the first intake hole 311 may be disposed at a middle portion of the upper distribution plate 31, and the second intake hole 312 may be disposed at an outer peripheral portion of the upper distribution plate 31.
  • the number of the first intake holes 311 may be less than the number
  • the number of the two air inlet holes 312, as shown in the figure, may be set to only one of the first air inlet holes 311, and four second air intake holes 312 may be provided; however, the cross-sectional area of the first air inlet holes 311 may be larger than the second The cross-sectional area of the intake hole 312.
  • FIG. 4 is a schematic top view of the distribution plate shown in FIG. 3.
  • FIG. 5 is a side view of the distribution plate shown in FIG. 3;
  • FIG. 6 is a bottom view of the distribution plate shown in FIG. Schematic;
  • Figure 7 is a schematic view of the axis of the distribution plate shown in Figure 3.
  • the middle distribution plate 32 is fixedly mounted horizontally below the upper distribution plate 31 with proper spacing therebetween; the middle distribution plate 32 has a first raised portion 325 around its top surface so that the middle distribution plate 32 is mounted on the upper distribution
  • a sealed cavity may be formed between the upper distribution plate 31 and the middle distribution plate 32 when the plate 31 is below (of course, the cavity passes through the first intake hole 311, the second intake hole 312, and the first to be described later)
  • the air supply passage 322 and the second air supply passage 323 are in communication with the outside.
  • the top surface of the middle distribution plate 32 also has a second raised portion 321 .
  • the second raised portion 321 divides the sealed cavity into a first chamber 341 and a second chamber 342 which are isolated from each other (both shown in FIG. 8);
  • the first air inlet hole 311 communicates with the first chamber 341
  • the second air inlet hole 312 communicates with the second chamber 342 .
  • the first chamber 341 may be located at a middle portion above the middle distribution plate 32, and the second chamber 342 may be The outer peripheral portion above the middle distribution plate 32 surrounds the first chamber 341.
  • the bottom of the middle distribution plate 32 is provided with a plurality of bosses 324.
  • the bosses 324 are generally vertically downwardly convex.
  • the middle distribution plate 32 further has a first air supply passage 322 and a second air supply passage 323, both of which may have a circular shape or a regular polygonal shape; the first air supply passage 322 extends substantially vertically and runs through the thickness direction.
  • the middle distribution plate 32 penetrates the boss 324 in the axial direction; the second air supply passage 323 also extends substantially vertically and penetrates the middle distribution plate 32 in the thickness direction.
  • the top opening of the first air supply passage 322 may be disposed in the first chamber 341, that is, the inner side of the second convex portion 321; the top opening of the second air supply passage 323 may be disposed in the second chamber 342, that is, the second convex portion The outer side of the starting portion 321 is.
  • the middle distribution plate 32 is also provided with a third raised portion 326 that projects downwardly around its bottom edge to maintain a proper distance between the middle distribution plate 32 and the lower distribution plate 33 to be described, and thus A third chamber 343 is formed (shown in Figure 8).
  • the gas distribution device 3 also includes a lower distribution plate 33.
  • the lower distribution plate 33 is fixedly mounted horizontally below the middle distribution plate 32, and a substantially vertically disposed through hole 331 extends through the lower distribution plate 33.
  • the number and arrangement positions of the through holes 331 are adapted to the bosses 324 at the bottom of the middle distribution plate 32 so that each of the bosses 324 can be located in a through hole 331 when the lower distribution plate 33 is mounted under the middle distribution plate 32.
  • the cross-sectional shape of the boss 324 and the through hole 331 may both be circular or both of a regular polygon.
  • the shape of the cross section of the both is not limited thereto; the cross section of the boss 324 is appropriately smaller than the cross section of the through hole 331.
  • the cross section, and the two are disposed coaxially such that the gap is substantially cylindrical.
  • FIG. 8 is a cross-sectional structural view of the gas distribution device shown in FIG. Fig. 9 is a partial enlarged view of a portion A in Fig. 8.
  • the gas distribution device 3 in the above embodiment has two gas transport paths that are isolated from each other, and the first path is defined by the first air inlet hole 311 of the upper distribution plate 31, the upper distribution plate 31, and the middle distribution plate 32.
  • the second path is formed by a second air inlet 312 of the upper distribution plate 31,
  • a through hole 331 is formed, which is indicated by a broken line and a solid arrow in FIG.
  • the first path is completely isolated from the second path, and the easily reactable gas can enter the reaction chamber of the plasma processing apparatus through different transport paths, thereby effectively avoiding the contact of the easily reactable gas in the gas distribution device, and further The possibility of gas reaction before entering the reaction chamber is completely eliminated.
  • the bottom end opening of the first path is located in the boss, and the bottom end opening of the second path surrounds the boss; thus, two gases entering the reaction chamber from different conveying paths can be realized. More adequate mixing.
  • the bottom opening of the first air supply passage 322 may be diverging (ie, the bottom opening of the first air supply passage 322 is along its axis (ie, along the vertical direction of the distribution plate 32 and the boss 324 therethrough).
  • the top-down is gradually increased.
  • the "upper” refers to the direction toward the upper distribution plate 31; the so-called “lower” refers to the direction toward the lower distribution plate 33), thereby facilitating entry from the first path described above.
  • the gas diffuses in the radial direction of the reaction chamber of the plasma processing apparatus; at the same time, the bottom opening of the through hole 331 can also be diverged (ie, the bottom opening of the through hole 331 is along its axis (ie, along the through distribution plate 33)
  • the vertical direction is gradually increased from the top to the bottom.
  • the "upper” refers to the direction toward the upper distribution plate 31; the so-called “lower” refers to the direction toward the lower distribution plate 33), thereby promoting from the above
  • the gas entering the second path diffuses in the radial direction of the reaction chamber.
  • the bottom of the outer wall of the boss 324 may be provided with a tapered surface 327 (shown in FIG.
  • FIG. 10 is a cross-sectional view showing another embodiment of the gas distribution device according to the present invention.
  • the gas distribution apparatus provided by the present invention can be modified on the basis of the specific embodiments described above.
  • the first air inlet hole 311 is located at the middle of the upper distribution plate 31; the length of each of the bosses 324 at the bottom of the middle distribution plate 32 is different (ie, the bottom surface of the boss 324 at different positions) The height is different), and thus the distance between the bottom opening of each of the first air supply passages 322 and the lower plate of the plasma processing apparatus is different.
  • each of the bosses 324 gradually increases from the central portion of the middle distribution plate 32 to the outer peripheral portion, so that the distance between the bottom opening of each of the first air supply passages 322 and the lower plate of the plasma processing apparatus is from the middle of the middle distribution plate 32.
  • the outer peripheral portion gradually decreases.
  • the boss 324 at the center in Fig. 10 may have a length of HI
  • the boss 324 at the outer periphery may have a length of H2.
  • each of the bosses 324 may be substantially equal to the length of the through holes 331, so that the bottom opening of each of the first air supply passages 322 has substantially the same height as the bottom opening of the through hole 331 (ie, the two are substantially equal) ).
  • each of the first air supply passages 322 having the same height may form a circle or a polygon surrounding the center of the middle distribution plate 32; in the radial direction of the middle distribution plate 32, the height of the bottom opening of the adjacent two first air supply passages 322 Can be different.
  • the cross-sectional areas of the first gas supply passages 32 may also be different to adjust the concentration of gas in different locations in the reaction chamber.
  • the gas since the gas enters the first chamber 341 from the middle of the upper distribution plate 31, even if multiple hooking is performed in the first chamber 341, it is located in the middle of the middle distribution plate 32.
  • the concentration of the gas in the first air supply passage 322 is still higher than the concentration of the gas in the first air supply passage 322 located at the outer peripheral portion of the middle distribution plate 32. It is well known that the greater the distance between the bottom opening of the first gas supply passage 322 and the lower electrode, the longer the diffusion path of the gas in the reaction chamber will be, and the more the diffusion will be; the smaller the distance, the gas in the reaction chamber The lower the degree of diffusion.
  • the concentration of the gas in the middle portion of the middle distribution plate 32 is higher but the diffusion is more sufficient, and the concentration of the gas in the outer peripheral portion is lower but diffused. The degree is lower, thereby increasing the uniformity of the radial distribution of the gas above the lower electrode as a whole.
  • the gas flowing from the through holes 331 into the reaction chamber can also be more uniformly distributed in the radial direction of the reaction chamber; , No longer.
  • FIG. 11 is a schematic diagram of a specific installation manner of the boss provided by the present invention.
  • the boss 324 is disposed at the bottom of the center distribution plate 32; this can be accomplished by conventional means, for example, by welding the boss 324 to the bottom of the center distribution plate 32.
  • the boss 324 and the middle distribution plate 32 may also have an integral structure.
  • the boss 324 is fixedly mounted to the middle distribution plate in a detachable manner.
  • the bottom of 32 for example, the boss 324 and the middle distribution plate 32 may be integrally connected by a mating inner and outer thread.
  • bosses 324 can be replaced and adjusted for different process requirements, which not only improves the adaptability of the plasma processing apparatus, but also significantly extends the overall life of the gas distribution device 3 and reduces operating costs.
  • the plasma processing apparatus provided by the present invention includes the gas distribution device 3 as described above; for other structures of the plasma processing apparatus, please refer to the prior art, and no further description is provided herein.
  • the plasma processing apparatus may specifically be a plasma etching apparatus or a plasma deposition apparatus.
  • the gas delivery method provided by the invention can be used for conveying gas into a reaction chamber of a plasma processing apparatus, the gas is a mixture of a plurality of gases, wherein a plurality of gases are easily reacted, and gases that are prone to reaction are respectively
  • the reaction chamber is entered from a different intake path. Since the readily reactive gas enters the reaction chamber of the plasma processing apparatus through different transport paths, this completely eliminates the possibility of gas reacting before entering the reaction chamber.
  • the intake path may include a first intake path and a second intake path, both Independent of each other. Assuming that the gas enthalpy reacts readily with the gas B, the gas enthalpy can be transported into the reaction chamber through the first intake path, and the gas B can be delivered to the reaction chamber through the second intake path.
  • the number of the first intake path and the second intake path may be plural, and any of the first intake paths are adjacent. At least one second intake path, the ends of which are generally hooked at the top of the reaction chamber. Thus, gases entering the reaction chamber from different paths can be more fully and uniformly mixed.
  • first intake path and the second intake path described above may be various.
  • a specific form that is relatively easy to implement is that the second intake path encloses the first intake path at least at its end such that an air outlet of the second intake path surrounds the first intake air The outlet of the path.
  • This form of construction is not only easy to implement, but also facilitates further uniform mixing of gases entering the reaction chamber from different paths.
  • the positions at which the ends of the first intake path and the second intake path are further improved may be further improved: from a central position to an outer peripheral position of the reaction chamber, the first intake path and the second intake path The position at the end is gradually lowered.

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Abstract

A gas distribution device, a plasma processing apparatus using the gas distribution device and a method used for delivering gas into a reaction chamber of the plasma processing apparatus are provided. The gas distribution device (3) comprises three layers: an upper distribution plate (31), a middle distribution plate (32) and a lower distribution plate (33). Two gas delivery paths which are separated from each other are formed among the three layers of the distribution plates. As the two gas delivery paths are fully separated, easily reacted gases can enter the reaction chamber of the plasma processing apparatus by different delivery paths and the contact of the easily reacted gases in the gas distribution device is voided, thus eliminating the possibility of reaction of the gases before entering the reaction chamber. Meanwhile, as the two gas delivery paths are staggered, two paths of gases which enter the reaction chamber through different delivery paths can be mixed sufficiently.

Description

等离子体处理设备、 气体分配装置以及气体输送方法 技术领域  Plasma processing apparatus, gas distribution apparatus, and gas delivery method
本发明涉及等离子体加工技术， 特别涉及一种用于等离子体处理工艺的 气体分配装置。 本发明还涉及一种包括上述气体分配装置的等离子体处理设 备， 以及一种向等离子体处理设备的反应腔室中输送气体的方法。 背景技术  This invention relates to plasma processing techniques, and more particularly to a gas distribution apparatus for a plasma processing process. The invention further relates to a plasma processing apparatus comprising the above gas distribution apparatus, and a method of delivering a gas to a reaction chamber of a plasma processing apparatus. Background technique
等离子体处理设备广泛应用于微电子技术领域。  Plasma processing equipment is widely used in the field of microelectronics technology.
请参考图 1 , 图 1为一种典型的等离子体处理设备的结构示意图。  Please refer to FIG. 1. FIG. 1 is a schematic structural view of a typical plasma processing apparatus.
等离子体处理设备 1通常包括壳体 11 , 壳体 11中具有反应腔室 12, 反 应腔室 12的顶部和底部分别相对应地设有上极板 13和下极板 14;下极板 14 的顶部可以设置待处理的加工件。  The plasma processing apparatus 1 generally includes a housing 11 having a reaction chamber 12 therein, and a top plate and a bottom portion of the reaction chamber 12 are respectively provided with an upper plate 13 and a lower plate 14; the lower plate 14 is The workpiece to be processed can be set at the top.
等离子体处理设备 1工作时， 通过干泵等真空获得装置 （图中未示出） 在反应腔室 12中制造并维持接近真空的状态。在此状态下，通过气体分配装 置 16向反应腔室 12中输入气体， 并在上极板 13和下极板 14之间输入适当 的射频，从而激活所述气体，进而在加工件的表面产生并维持等离子体环境。 由于具有强烈的刻蚀以及淀积能力， 所述等离子体可以与所述加工件发生刻 蚀或者淀积等物理化学反应， 以获得所需要的刻蚀图形或者淀积层。 上述物 理化学反应的副产物由所述真空获得装置从反应腔室 12中抽出。  When the plasma processing apparatus 1 is in operation, a vacuum obtaining means (not shown) such as a dry pump is used to manufacture and maintain a state close to a vacuum in the reaction chamber 12. In this state, gas is introduced into the reaction chamber 12 through the gas distribution device 16, and an appropriate radio frequency is input between the upper plate 13 and the lower plate 14, thereby activating the gas, thereby generating on the surface of the workpiece. And maintain the plasma environment. Due to the strong etching and deposition capabilities, the plasma can undergo physicochemical reactions such as etching or deposition with the workpiece to obtain the desired etch pattern or deposited layer. The by-product of the above physical chemical reaction is withdrawn from the reaction chamber 12 by the vacuum obtaining means.
请参考图 2, 图 2为一种典型的气体分配装置的结构示意图。  Please refer to FIG. 2, which is a schematic structural view of a typical gas distribution device.
一种典型的气体分布装置 2包括大体呈圓形的支撑板 21 , 支撑板 21位 于等离子体处理设备反应腔室顶部的中央位置， 且可以以常规的方式固定安 装， 其中心位置设有进气孔 211。  A typical gas distribution device 2 includes a generally circular support plate 21 that is centrally located at the top of the reaction chamber of the plasma processing apparatus and that can be fixedly mounted in a conventional manner with air intake at a central location Hole 211.
支撑板 21的下方固定连接有喷头电极 23 , 两者的连接部位保持气密封 (此处以及下文所述气密封， 均指一种结果， 而非手段； 也即无论釆用何种 具体技术手段， 支撑板 21与喷头电极 23的连接部位都不应出现气体泄漏现 象），且两者之间形成气体分配腔室。上述进气孔 211与所述气体分配腔室连 通。 A showerhead electrode 23 is fixedly connected to the lower side of the support plate 21, and the connection portions of the two are kept sealed. (The hermetic seals here and below refer to a result, not a means; that is, no matter what specific technical means, the joint between the support plate 21 and the showerhead electrode 23 should not exhibit gas leakage). And a gas distribution chamber is formed between the two. The intake port 211 is in communication with the gas distribution chamber.
所述气体分配腔室中以常规的方式设置多层阻流板 22, 各层阻流板 22 之间， 以及阻流板 22与支撑板 21、 喷头电极 23之间保留适当的距离； 阻流 板 22包括多个将其轴向贯通的气体通道 221。  The gas distribution chamber is provided with a plurality of spoilers 22 in a conventional manner, between each layer of the spoilers 22, and an appropriate distance between the spoiler 22 and the support plate 21 and the showerhead electrode 23; The plate 22 includes a plurality of gas passages 221 that extend axially therethrough.
由于各层阻流板 22的气体通道 221均可以相错离地设置， 因此气体经 过阻流板 22时被迫产生一定的横向位移， 因此径向均勾度可以得到增加； 随 着阻流板 22的层数的增加， 气体发生横向位移的次数也增多， 因此喷头电极 23的上表面 232处得到的气体的径向均匀度也将不断提高。  Since the gas passages 221 of each layer of the baffle 22 can be disposed offset from each other, the gas is forced to generate a certain lateral displacement when passing through the spoiler 22, so that the radial uniformity can be increased; As the number of layers of 22 increases, the number of lateral displacements of the gas also increases, so that the radial uniformity of the gas obtained at the upper surface 232 of the showerhead electrode 23 is also continuously increased.
喷头电极 23中均勾地分布着多个通气孔 231 ,用以连通所述气体分配腔 室中最下层的小腔室以及喷头电极 23 下方的反应腔室； 气体可以自通气孔 231流入等离子体处理设备的反应腔室中。  A plurality of vent holes 231 are disposed in the shower electrode 23 for communicating with the lowermost small chamber in the gas distribution chamber and the reaction chamber below the shower electrode 23; gas may flow into the plasma from the vent 231 Processing the reaction chamber of the device.
从上述气体分布装置 2的具体结构以及工作过程可以明显地看出， 进入 反应腔室之前， 各种气体已经在气体分布装置 2中混合； 因此， 进入反应腔 室之前， 易反应的气体在气体分布装置 2中将发生反应， 这显然是应当避免 的。  It can be clearly seen from the specific structure and working process of the above gas distribution device 2 that various gases have been mixed in the gas distribution device 2 before entering the reaction chamber; therefore, the gas which is easily reacted is in the gas before entering the reaction chamber. A reaction will occur in the distribution device 2, which is obviously to be avoided.
因此， 如何将容易反应的气体有效地隔离从而避免该气体在进入反应腔 室前发生反应， 是本领域技术人员目前需要解决的技术问题。 发明内容  Therefore, how to effectively isolate the easily reactable gas to prevent the gas from reacting before entering the reaction chamber is a technical problem that those skilled in the art need to solve at present. Summary of the invention
本发明的目的是提供一种气体分配装置， 能够将容易反应的气体有效隔 离， 从而避免上述气体在进入反应腔室前发生反应； 同时， 进入反应腔室后 各种气体可以实现较为充分的混合。 本发明的另一目的是提供一种包括上述 气体分配装置的等离子体处理设备。 本发明的第三个目的是提供一种向等离 子体处理设备的反应腔室中输送气体的方法。 SUMMARY OF THE INVENTION It is an object of the present invention to provide a gas distribution device capable of effectively isolating gases which are easily reacted, thereby preventing the gas from reacting before entering the reaction chamber; and simultaneously, various gases can be sufficiently mixed after entering the reaction chamber. . Another object of the present invention is to provide a plasma processing apparatus including the above gas distribution device. A third object of the present invention is to provide a detachment A method of transporting gas in a reaction chamber of a daughter processing apparatus.
为解决上述技术问题， 本发明提供一种气体分配装置， 用于等离子体处 理设备， 包括： 上分配板， 其设置于等离子体处理设备反应腔室上方， 且具 有第一进气孔和第二进气孔， 两者均大体竖直地贯穿该上分配板； 中分配板， 其设置于所述上分配板下方； 该中分配板与所述上分配板之间具有相互隔离 的第一腔室和第二腔室， 两者分别与所述第一进气孔和第二进气孔连通； 所 述中分配板的底部具有多个向下凸出的凸台， 对应于每一所述凸台均设置有 大体竖直地贯穿所述中分配板以及该凸台的第一送气通道， 所述第一送气通 道的顶部开口均位于所述第一腔室中； 所述中分配板进一步具有顶部开口位 于所述第二腔室中且竖直贯通该中分配板的第二送气通道； 下分配板， 其设 置于所述中分配板下方， 对应于所述凸台而在该下分配板上设置多个通孔； 每一所述凸台均位于一所述通孔中， 且每一通孔与位于其中的凸台之间均具 有竖直贯穿所述下分配板的间隙， 该间隙与所述第二送气通道相连通。  In order to solve the above technical problem, the present invention provides a gas distribution device for a plasma processing apparatus, comprising: an upper distribution plate disposed above a reaction chamber of a plasma processing apparatus and having a first air inlet and a second An air intake hole, both of which extend substantially vertically through the upper distribution plate; a middle distribution plate disposed below the upper distribution plate; the intermediate distribution plate and the upper distribution plate have mutually isolated first chambers a chamber and a second chamber, the two being in communication with the first and second intake holes, respectively; the bottom of the middle distribution plate has a plurality of downwardly projecting bosses corresponding to each of the The bosses are each provided with a first air supply passage extending substantially vertically through the middle distribution plate and the boss, the top opening of the first air supply passage being located in the first chamber; the middle distribution plate further a second air supply passage having a top opening in the second chamber and vertically penetrating the middle distribution plate; a lower distribution plate disposed under the middle distribution plate, corresponding to the boss Board setting Each of the bosses is located in one of the through holes, and each of the through holes and the boss located therein has a gap vertically penetrating the lower distribution plate, the gap and the first The two air supply passages are connected.
进一步， 所述第一进气孔位于所述上分配板的中部； 并且所述第一送气 通道底部开口的高度具有下述设置规则： 即， 各所述第一送气通道底部开口 的高度自所述中分配板的中部向外周部逐渐降低， 或者各所述第一送气通道 底部开口的高度大致相同。  Further, the first air inlet hole is located at a middle portion of the upper distribution plate; and the height of the bottom opening of the first air supply channel has a setting rule that: the height of the bottom opening of each of the first air supply channels is self-sufficient The middle portion of the distribution plate is gradually lowered toward the outer peripheral portion, or the height of the bottom opening of each of the first air supply passages is substantially the same.
进一步， 所述第一送气通道的底部开口与其所在通孔的底部开口的高度 大体相同。  Further, the bottom opening of the first air supply passage is substantially the same as the height of the bottom opening of the through hole.
进一步， 具有相同高度的所述第一送气通道的底部开口形成围绕所述中 分配板中心的圓形或者多边形。  Further, the bottom opening of the first air supply passage having the same height forms a circle or a polygon surrounding the center of the middle distribution plate.
进一步， 所述凸台可拆卸地安装于所述中分配板的底部。  Further, the boss is detachably mounted to the bottom of the middle distribution plate.
进一步， 所述凸台通过螺紋连接于所述中分配板的底部。  Further, the boss is screwed to the bottom of the middle distribution plate.
进一步， 所述凸台的横截面形状、 所述第一送气通道的横截面形状以及 所述通孔的横截面形状均为圓形或者均为正多边形。  Further, the cross-sectional shape of the boss, the cross-sectional shape of the first air supply passage, and the cross-sectional shape of the through hole are both circular or all of a regular polygon.
进一步， 所述第一送气通道的底部开口以及所述通孔的底部开口均沿各 自轴线方向渐扩。 Further, the bottom opening of the first air supply channel and the bottom opening of the through hole are respectively Expanding from the axis direction.
进一步， 所述凸台外壁的底部渐缩。  Further, the bottom of the outer wall of the boss is tapered.
本发明还提供一种等离子体处理设备， 包括上述任一项所述的气体分配 装置。  The present invention also provides a plasma processing apparatus comprising the gas distribution device according to any of the above.
本发明还提供了一种气体输送方法， 用于向等离子体处理设备的反应腔 室中输送气体， 容易发生反应的气体分别自不同的进气路径进入所述反应腔 室。  The present invention also provides a gas delivery method for transporting gas into a reaction chamber of a plasma processing apparatus, and gases that are susceptible to reaction enter the reaction chamber from different intake paths, respectively.
进一步， 所述进气路径包括第一进气路径以及与所述第一进气路径相邻 的第二进气路径； 所述第一进气路径和第二进气路径的数目均为多条， 且两 者的末端大体均匀地分布于所述反应腔室的顶部。  Further, the intake path includes a first intake path and a second intake path adjacent to the first intake path; the number of the first intake path and the second intake path are multiple And the ends of the two are substantially evenly distributed on top of the reaction chamber.
进一步， 所述第二进气路径的末端包围所述第一进气路径的末端。  Further, an end of the second intake path surrounds an end of the first intake path.
进一步， 自所述反应腔室的中心位置向外周位置， 所述第一进气路径和 第二进气路径末端所处的位置逐渐降低。  Further, from the center position of the reaction chamber to the outer peripheral position, the positions of the first intake path and the end of the second intake path are gradually lowered.
相对上述背景技术， 本发明所提供的气体分配装置具有两条相互隔离的 气体输送路径， 即由上分配板的第一进气孔、 上分配板和中分配板之间的第 一腔室、 中分配板的第一送气通道所形成的第一条气体输送路径， 以及由上 分配板的第二进气孔、 上分配板和中分配板之间的第二腔室、 中分配板的第 二送气通道、 下分配板的通孔所形成的第二条气体输送路径。 上述第一条路 径与第二条路径完全隔离， 容易反应的气体因此可以通过不同的输送路径进 入等离子体处理设备的反应腔室， 从而有效避免了容易反应的气体在气体分 配装置中的接触，进而完全消除了气体在进入反应腔室之前发生反应的可能。 同时， 由于上述第一条路径的底端开口位于所述凸台之中， 而上述第二条路 径的底端开口围绕所述凸台； 这样， 自不同输送路径进入反应腔室的两路气 体可以实现较为充分的混合。 本发明所提供的等离子体处理设备以及气体输 送方法同样可以实现上述技术效果， 不再赘述。  With respect to the above background art, the gas distribution device provided by the present invention has two mutually isolated gas transport paths, that is, a first air inlet hole of the upper distribution plate, a first chamber between the upper distribution plate and the middle distribution plate, a first gas delivery path formed by the first air supply passage of the middle distribution plate, and a second air inlet hole of the upper distribution plate, a second chamber between the upper distribution plate and the middle distribution plate, and a middle distribution plate a second gas delivery path formed by the through holes of the two air supply passages and the lower distribution plate. The first path is completely isolated from the second path, and the easily reactable gas can enter the reaction chamber of the plasma processing apparatus through different transport paths, thereby effectively avoiding the contact of the easily reactable gas in the gas distribution device. This in turn completely eliminates the possibility of gas reacting before entering the reaction chamber. At the same time, since the bottom end opening of the first path is located in the boss, and the bottom end opening of the second path surrounds the boss; thus, two gases entering the reaction chamber from different conveying paths A fuller mix can be achieved. The plasma processing apparatus and the gas delivery method provided by the present invention can also achieve the above technical effects, and will not be described again.
在一种优选的实施方式中， 所述第一进气孔位于所述上分配板的中部， 且所述第一送气通道底部开口的高度自所述中分配板的中部向外周部逐渐降 低， 从而使所述第一送气通道到下电极的距离自所述中分配板的中部向外周 部逐渐减小。 由于气体是自所述上分配板的中部进入第一腔室的， 因此即使 在第一腔室中进行多次勾流， 位于中部的第一送气通道中气体的浓度仍会高 于位于外周部的第一送气通道中气体的浓度。 众所周知， 所述第一送气通道 底部开口与所述下电极的距离越大， 气体在反应腔室中的扩散路径将越长、 扩散也就越充分； 上述距离越小， 气体在反应腔室中的扩散程度越低。 因此， 在第一送气通道到下电极的距离自中分配板的中部向外周部逐渐减小的情况 下， 气体在中分配板中部的浓度较高但扩散较为充分， 气体在外周部的浓度 较低但扩散程度较低， 从而在整体上提高了下电极上方的气体的径向分布均 匀度。 附图说明 In a preferred embodiment, the first air inlet hole is located in a middle portion of the upper distribution plate. And the height of the bottom opening of the first air supply passage gradually decreases from the central portion of the middle distribution plate to the outer peripheral portion, so that the distance from the first air supply passage to the lower electrode gradually increases from the middle portion to the outer peripheral portion of the middle distribution plate. Reduced. Since the gas enters the first chamber from the middle of the upper distribution plate, even if multiple sag is performed in the first chamber, the concentration of gas in the first air supply passage located in the middle portion is higher than that at the outer peripheral portion. The concentration of gas in the first air supply passage. It is well known that the greater the distance between the bottom opening of the first gas supply passage and the lower electrode, the longer the diffusion path of the gas in the reaction chamber will be, and the more diffusion will be; the smaller the distance, the gas in the reaction chamber The lower the degree of diffusion. Therefore, in the case where the distance from the first air supply passage to the lower electrode gradually decreases from the middle portion of the middle distribution plate to the outer peripheral portion, the concentration of the gas in the middle portion of the middle distribution plate is higher but the diffusion is more sufficient, and the concentration of the gas in the outer peripheral portion is higher. Low but less diffusive, thereby increasing the uniformity of radial distribution of the gas above the lower electrode as a whole. DRAWINGS
图 1为一种典型的等离子体处理设备的结构示意图；  1 is a schematic structural view of a typical plasma processing apparatus;
图 2为一种典型的气体分配装置的结构示意图；  2 is a schematic structural view of a typical gas distribution device;
图 3为本发明所提供的气体分配装置一种具体实施方式的结构示意图； 图 4为图 3所示中分配板的俯视示意图；  3 is a schematic structural view of a gas distribution device according to a specific embodiment of the present invention; FIG. 4 is a schematic plan view of the distribution plate shown in FIG. 3;
图 5为图 3所示中分配板的侧视示意图；  Figure 5 is a side elevational view of the distribution plate shown in Figure 3;
图 6为图 3所示中分配板的仰视示意图；  Figure 6 is a bottom view of the distribution plate shown in Figure 3;
图 7为图 3所示中分配板的轴测视示意图；  Figure 7 is a schematic view showing the axis of the distribution plate shown in Figure 3;
图 8为图 3所示气体分配装置的剖视结构示意图；  Figure 8 is a cross-sectional structural view of the gas distribution device shown in Figure 3;
图 9为图 8中 A部位的局部放大图；  Figure 9 is a partial enlarged view of the portion A of Figure 8;
图 10为本发明所提供的气体分配装置另一种具体实施方式的剖视示意 图； 以及  Figure 10 is a cross-sectional schematic view showing another embodiment of the gas distribution device provided by the present invention;
图 11为本发明所提供凸台的一种具体安装方式示意图。 具体实施方式 Figure 11 is a schematic view showing a specific mounting manner of the boss provided by the present invention. detailed description
为了使本技术领域的人员更好地理解本发明方案， 下面结合附图和具体 实施方式对本发明作进一步的详细说明。  The present invention will be further described in detail below with reference to the drawings and specific embodiments in order to provide a better understanding of the invention.
请参考图 3 , 图 3为本发明所提供的气体分配装置一种具体实施方式的 结构示意图。  Please refer to FIG. 3. FIG. 3 is a schematic structural view of a gas distribution device according to an embodiment of the present invention.
在第一种具体实施方式中， 本发明所提供的气体分配装置 3包括上分配 板 31、 中分配板 32以及下分配板 33; 三者具有大体相同的形状， 可以同是 正多边形或者同是圓形。  In a first embodiment, the gas distribution device 3 provided by the present invention comprises an upper distribution plate 31, a middle distribution plate 32 and a lower distribution plate 33; the three have substantially the same shape, and may be a regular polygon or a circle. shape.
上分配板 31 大体水平地固定安装于等离子体处理设备顶壁的下方， 且 具有第一进气孔 311和第二进气孔 312,两者均大体竖直地贯穿上分配板 31。  The upper distribution plate 31 is fixedly mounted horizontally below the top wall of the plasma processing apparatus and has a first intake aperture 311 and a second intake aperture 312, both of which extend generally vertically through the upper distribution plate 31.
第一进气孔 311和第二进气孔 312的横截面可以是圓形或者多边形， 两 者的数目均可以是一个或者多个。可以将第一进气孔 311设置于上分配板 31 的中部， 而将第二进气孔 312设置于上分配板 31的外周部， 此时， 第一进气 孔 311的数目可以少于第二进气孔 312的数目， 如图所示第一进气孔 311可 以仅设置一个， 同时可以设置四个第二进气孔 312; 但第一进气孔 311的横 截面积可以大于第二进气孔 312的横截面积。  The cross section of the first intake hole 311 and the second intake hole 312 may be circular or polygonal, and the number of both may be one or more. The first intake hole 311 may be disposed at a middle portion of the upper distribution plate 31, and the second intake hole 312 may be disposed at an outer peripheral portion of the upper distribution plate 31. At this time, the number of the first intake holes 311 may be less than the number The number of the two air inlet holes 312, as shown in the figure, may be set to only one of the first air inlet holes 311, and four second air intake holes 312 may be provided; however, the cross-sectional area of the first air inlet holes 311 may be larger than the second The cross-sectional area of the intake hole 312.
请同时参考图 4至图 7 , 图 4为图 3所示中分配板的俯视示意图； 图 5 为图 3所示中分配板的侧视示意图；图 6为图 3所示中分配板的仰视示意图； 图 7为图 3所示中分配板的轴测视示意图。  Please refer to FIG. 4 to FIG. 7 at the same time. FIG. 4 is a schematic top view of the distribution plate shown in FIG. 3. FIG. 5 is a side view of the distribution plate shown in FIG. 3; FIG. 6 is a bottom view of the distribution plate shown in FIG. Schematic; Figure 7 is a schematic view of the axis of the distribution plate shown in Figure 3.
中分配板 32大体水平地固定安装于上分配板 31的下方， 两者具有适当 的间距； 中分配板 32具有围绕其顶面的第一凸起部 325 ,从而当中分配板 32 安装于上分配板 31下方时可以在上分配板 31与中分配板 32之间形成密封的 腔体 (当然， 该腔体通过上述第一进气孔 311、 第二进气孔 312以及下文即 将描述的第一送气通道 322、 第二送气通道 323与外部连通）。  The middle distribution plate 32 is fixedly mounted horizontally below the upper distribution plate 31 with proper spacing therebetween; the middle distribution plate 32 has a first raised portion 325 around its top surface so that the middle distribution plate 32 is mounted on the upper distribution A sealed cavity may be formed between the upper distribution plate 31 and the middle distribution plate 32 when the plate 31 is below (of course, the cavity passes through the first intake hole 311, the second intake hole 312, and the first to be described later) The air supply passage 322 and the second air supply passage 323 are in communication with the outside.
中分配板 32的顶面还具有第二凸起部 321。第二凸起部 321将上述密封 的腔体分隔为相互隔离的第一腔室 341和第二腔室 342(两者均示于图 8中）； 其中， 第一进气孔 311连通所述第一腔室 341 , 第二进气孔 312连通所述第 二腔室 342。 The top surface of the middle distribution plate 32 also has a second raised portion 321 . The second raised portion 321 divides the sealed cavity into a first chamber 341 and a second chamber 342 which are isolated from each other (both shown in FIG. 8); The first air inlet hole 311 communicates with the first chamber 341 , and the second air inlet hole 312 communicates with the second chamber 342 .
当第一进气孔 311、 第二进气孔 312分别设置于上分配板 31的中部、 外 周部时， 第一腔室 341 可以位于中分配板 32上方的中部， 而第二腔室 342 可以位于中分配板 32上方的外周部并将第一腔室 341包围。  When the first air inlet hole 311 and the second air inlet hole 312 are respectively disposed at the central portion and the outer peripheral portion of the upper distribution plate 31, the first chamber 341 may be located at a middle portion above the middle distribution plate 32, and the second chamber 342 may be The outer peripheral portion above the middle distribution plate 32 surrounds the first chamber 341.
中分配板 32的底部设有多个凸台 324,显然， 凸台 324大体竖直向下凸 出。 中分配板 32还具有第一送气通道 322以及第二送气通道 323 , 两者横截 面的形状可以均为圓形或者均为正多边形；第一送气通道 322大体竖直延伸 , 并沿厚度方向贯穿中分配板 32且沿轴向贯穿凸台 324; 第二送气通道 323同 样大体竖直延伸， 并沿厚度方向贯穿中分配板 32。  The bottom of the middle distribution plate 32 is provided with a plurality of bosses 324. Obviously, the bosses 324 are generally vertically downwardly convex. The middle distribution plate 32 further has a first air supply passage 322 and a second air supply passage 323, both of which may have a circular shape or a regular polygonal shape; the first air supply passage 322 extends substantially vertically and runs through the thickness direction. The middle distribution plate 32 penetrates the boss 324 in the axial direction; the second air supply passage 323 also extends substantially vertically and penetrates the middle distribution plate 32 in the thickness direction.
第一送气通道 322的顶部开口可以设于第一腔室 341中， 即第二凸起部 321的内侧； 第二送气通道 323的顶部开口可以设于第二腔室 342中， 即第 二凸起部 321的外侧。  The top opening of the first air supply passage 322 may be disposed in the first chamber 341, that is, the inner side of the second convex portion 321; the top opening of the second air supply passage 323 may be disposed in the second chamber 342, that is, the second convex portion The outer side of the starting portion 321 is.
中分配板 32还设有围绕其底部边缘并向下凸出的第三凸起部 326 ,以便 在中分配板 32和即将描述的下分配板 33之间保持适当的距离， 进而在两者 之间形成第三腔室 343 (示于图 8中）。  The middle distribution plate 32 is also provided with a third raised portion 326 that projects downwardly around its bottom edge to maintain a proper distance between the middle distribution plate 32 and the lower distribution plate 33 to be described, and thus A third chamber 343 is formed (shown in Figure 8).
气体分配装置 3还包括下分配板 33。 下分配板 33大体水平地固定安装 于中分配板 32的下方， 大体竖直设置的通孔 331贯穿下分配板 33。通孔 331 的数目和设置位置均与中分配板 32底部的凸台 324相适应， 以便下分配板 33安装于中分配板 32下方时，每一凸台 324恰好可以位于一通孔 331之中。  The gas distribution device 3 also includes a lower distribution plate 33. The lower distribution plate 33 is fixedly mounted horizontally below the middle distribution plate 32, and a substantially vertically disposed through hole 331 extends through the lower distribution plate 33. The number and arrangement positions of the through holes 331 are adapted to the bosses 324 at the bottom of the middle distribution plate 32 so that each of the bosses 324 can be located in a through hole 331 when the lower distribution plate 33 is mounted under the middle distribution plate 32.
凸台 324进入通孔 331之后 ,两者之间应当具有在竖直方向延伸的间隙 , 该间隙可以将下分配板 33的上下表面连通。例如， 凸台 324和通孔 331的横 截面形状可以均为圓形或者均为正多边形， 当然， 两者横截面的形状并不限 于此； 凸台 324的横截面适当小于通孔 331的横截面， 且两者同轴设置， 从 而使上述间隙大体呈筒状。  After the boss 324 enters the through hole 331, there should be a gap extending between the two in the vertical direction, which gap can communicate the upper and lower surfaces of the lower distribution plate 33. For example, the cross-sectional shape of the boss 324 and the through hole 331 may both be circular or both of a regular polygon. Of course, the shape of the cross section of the both is not limited thereto; the cross section of the boss 324 is appropriately smaller than the cross section of the through hole 331. The cross section, and the two are disposed coaxially such that the gap is substantially cylindrical.
请参考图 8和图 9, 图 8为图 3所示气体分配装置的剖视结构示意图； 图 9为图 8中 A部位的局部放大图。 Please refer to FIG. 8 and FIG. 9. FIG. 8 is a cross-sectional structural view of the gas distribution device shown in FIG. Fig. 9 is a partial enlarged view of a portion A in Fig. 8.
上述具体实施方式中的气体分配装置 3具有两条相互隔离的气体输送路 径， 第一条路径由上分配板 31的第一进气孔 311、 上分配板 31和中分配板 32之间的第一腔室 341、 中分配板 32的第一送气通道 322所形成，该条路径 在图 9中用虚线以及空心箭头表示；第二条路径由上分配板 31的第二进气孔 312、 上分配板 31和中分配板 32之间的第二腔室 342、 中分配板 32的第二 送气通道 323、 中分配板 32和下分配板 33之间的第三腔室 343、 下分配板 33的通孔 331所形成， 该条路径在图 9中用虚线以及实心箭头表示。  The gas distribution device 3 in the above embodiment has two gas transport paths that are isolated from each other, and the first path is defined by the first air inlet hole 311 of the upper distribution plate 31, the upper distribution plate 31, and the middle distribution plate 32. A chamber 341, a first air supply passage 322 of the distribution plate 32, which is indicated by a broken line and a hollow arrow in FIG. 9; the second path is formed by a second air inlet 312 of the upper distribution plate 31, The second chamber 342 between the distribution plate 31 and the middle distribution plate 32, the second air supply passage 323 of the middle distribution plate 32, the third chamber 343 between the middle distribution plate 32 and the lower distribution plate 33, and the lower distribution plate 33 A through hole 331 is formed, which is indicated by a broken line and a solid arrow in FIG.
上述第一条路径与第二条路径完全隔离， 容易反应的气体因此可以通过 不同的输送路径进入等离子体处理设备的反应腔室， 有效避免了容易反应的 气体在气体分配装置中的接触， 进而完全消除了气体在进入反应腔室之前发 生反应的可能。 同时， 由于上述第一条路径的底端开口位于凸台之中， 而上 述第二条路径的底端开口围绕所述凸台； 这样， 自不同输送路径进入反应腔 室的两路气体可以实现较为充分的混合。  The first path is completely isolated from the second path, and the easily reactable gas can enter the reaction chamber of the plasma processing apparatus through different transport paths, thereby effectively avoiding the contact of the easily reactable gas in the gas distribution device, and further The possibility of gas reaction before entering the reaction chamber is completely eliminated. At the same time, since the bottom end opening of the first path is located in the boss, and the bottom end opening of the second path surrounds the boss; thus, two gases entering the reaction chamber from different conveying paths can be realized. More adequate mixing.
如图 8所示， 第一送气通道 322的底部开口可以渐扩（即， 第一送气通 道 322的底部开口沿其轴线（即，沿贯穿中分配板 32和凸台 324的竖直方向） 自上而下逐渐增大， 在此， 所谓 "上"指的是朝向上分配板 31的方向； 所谓 "下" 指的是朝向下分配板 33的方向）， 从而促进自上述第一条路径进入的 气体在等离子体处理设备反应腔室的径向上的扩散； 同时， 通孔 331的底部 开口同样可以渐扩 （即， 通孔 331的底部开口沿其轴线（即， 沿贯穿下分配 板 33的竖直方向） 自上而下逐渐增大， 在此， 所谓 "上"指的是朝向上分配 板 31的方向； 所谓 "下"指的是朝向下分配板 33的方向 ), 从而促进自上述 第二条路径进入的气体在反应腔室的径向上的扩散。 为了进一步提高自上述 第二条路径进入的气体的扩散效果，凸台 324外壁的底部可以设置渐缩面 327 (示于图 5中），该渐缩面 327与渐扩的通孔 331底部相配合可以使自上述第 二条路径进入的气体向两侧同时扩散， 扩散效果将显著提高。 请参考图 10, 图 10为本发明所提供的气体分配装置另一种具体实施方 式的剖视示意图。 As shown in FIG. 8, the bottom opening of the first air supply passage 322 may be diverging (ie, the bottom opening of the first air supply passage 322 is along its axis (ie, along the vertical direction of the distribution plate 32 and the boss 324 therethrough). The top-down is gradually increased. Here, the "upper" refers to the direction toward the upper distribution plate 31; the so-called "lower" refers to the direction toward the lower distribution plate 33), thereby facilitating entry from the first path described above. The gas diffuses in the radial direction of the reaction chamber of the plasma processing apparatus; at the same time, the bottom opening of the through hole 331 can also be diverged (ie, the bottom opening of the through hole 331 is along its axis (ie, along the through distribution plate 33) The vertical direction is gradually increased from the top to the bottom. Here, the "upper" refers to the direction toward the upper distribution plate 31; the so-called "lower" refers to the direction toward the lower distribution plate 33), thereby promoting from the above The gas entering the second path diffuses in the radial direction of the reaction chamber. In order to further improve the diffusion effect of the gas entering from the second path, the bottom of the outer wall of the boss 324 may be provided with a tapered surface 327 (shown in FIG. 5) which is opposite to the bottom of the diverging through hole 331. The cooperation can make the gas entering from the second path simultaneously diffuse to both sides, and the diffusion effect is remarkably improved. Please refer to FIG. 10. FIG. 10 is a cross-sectional view showing another embodiment of the gas distribution device according to the present invention.
可以在上文所述具体实施方式的基础上对本发明所提供的气体分配装 置进行改进。  The gas distribution apparatus provided by the present invention can be modified on the basis of the specific embodiments described above.
在图 10所示具体实施方式中， 第一进气孔 311位于所述上分配板 31的 中部； 中分配板 32底部各凸台 324的长度存在差异（即处于不同位置的凸台 324底面的高度不同 ),进而使各第一送气通道 322底部开口与等离子体处理 设备下极板的距离存在差异。  In the embodiment shown in FIG. 10, the first air inlet hole 311 is located at the middle of the upper distribution plate 31; the length of each of the bosses 324 at the bottom of the middle distribution plate 32 is different (ie, the bottom surface of the boss 324 at different positions) The height is different), and thus the distance between the bottom opening of each of the first air supply passages 322 and the lower plate of the plasma processing apparatus is different.
具体地说， 各凸台 324的长度自中分配板 32的中部向外周部逐渐增加， 因此各第一送气通道 322底部开口与等离子体处理设备下极板的距离自中分 配板 32的中部向外周部逐渐减小。 例如， 图 10中位于中部的凸台 324的长 度可以为 HI , 而位于外周部的凸台 324的长度可以为 H2。  Specifically, the length of each of the bosses 324 gradually increases from the central portion of the middle distribution plate 32 to the outer peripheral portion, so that the distance between the bottom opening of each of the first air supply passages 322 and the lower plate of the plasma processing apparatus is from the middle of the middle distribution plate 32. The outer peripheral portion gradually decreases. For example, the boss 324 at the center in Fig. 10 may have a length of HI, and the boss 324 at the outer periphery may have a length of H2.
各凸台 324的长度与其所在的通孔 331的长度可以大体相等， 从而使各 第一送气通道 322的底部开口与其所在的通孔 331的底部开口具有大体相同 的高度（即两者大体相平）。  The length of each of the bosses 324 may be substantially equal to the length of the through holes 331, so that the bottom opening of each of the first air supply passages 322 has substantially the same height as the bottom opening of the through hole 331 (ie, the two are substantially equal) ).
具有相同高度的各第一送气通道 322的底部开口可以形成围绕中分配板 32中心的圓形或者多边形； 在中分配板 32的径向上， 相邻的两第一送气通 道 322的底部开口的高度可以均不相同。  The bottom opening of each of the first air supply passages 322 having the same height may form a circle or a polygon surrounding the center of the middle distribution plate 32; in the radial direction of the middle distribution plate 32, the height of the bottom opening of the adjacent two first air supply passages 322 Can be different.
各第一送气通道 32 的横截面积也可以不相同， 以此调节反应腔室中不 同位置中气体的浓度。  The cross-sectional areas of the first gas supply passages 32 may also be different to adjust the concentration of gas in different locations in the reaction chamber.
在图 10所示具体实施方式中， 由于气体是自上分配板 31的中部进入第 一腔室 341的， 因此即使在第一腔室 341中进行多次勾流， 位于中分配板 32 中部的第一送气通道 322中气体的浓度仍会高于位于中分配板 32外周部的第 一送气通道 322中气体的浓度。 众所周知， 第一送气通道 322底部开口与所 述下电极的距离越大， 气体在反应腔室中的扩散路径将越长、 扩散也就越充 分； 上述距离越小， 气体在反应腔室中的扩散程度越低。 因此， 在第一送气 通道 322到下电极的距离自中分配板 32的中部向外周部逐渐减小的情况下， 气体在中分配板 32中部的浓度较高但扩散较为充分，气体在外周部的浓度较 低但扩散程度较低， 从而在整体上提高了下电极上方的气体的径向分布均匀 度。 In the embodiment shown in FIG. 10, since the gas enters the first chamber 341 from the middle of the upper distribution plate 31, even if multiple hooking is performed in the first chamber 341, it is located in the middle of the middle distribution plate 32. The concentration of the gas in the first air supply passage 322 is still higher than the concentration of the gas in the first air supply passage 322 located at the outer peripheral portion of the middle distribution plate 32. It is well known that the greater the distance between the bottom opening of the first gas supply passage 322 and the lower electrode, the longer the diffusion path of the gas in the reaction chamber will be, and the more the diffusion will be; the smaller the distance, the gas in the reaction chamber The lower the degree of diffusion. Therefore, in the first aspiration When the distance from the channel 322 to the lower electrode gradually decreases from the middle portion of the middle distribution plate 32 to the outer peripheral portion, the concentration of the gas in the middle portion of the middle distribution plate 32 is higher but the diffusion is more sufficient, and the concentration of the gas in the outer peripheral portion is lower but diffused. The degree is lower, thereby increasing the uniformity of the radial distribution of the gas above the lower electrode as a whole.
在各凸台 324 的长度与其所在的通孔 331 的长度可以大体相等的情况 下， 自通孔 331流入反应腔室的气体同样可以在反应腔室的径向上实现更为 均匀的分布； 原理同上， 不再赘述。  In the case where the length of each of the bosses 324 and the length of the through holes 331 thereof are substantially equal, the gas flowing from the through holes 331 into the reaction chamber can also be more uniformly distributed in the radial direction of the reaction chamber; , No longer.
请参考图 11 , 图 11为本发明所提供凸台的一种具体安装方式示意图。 如前所述， 凸台 324设置于中分配板 32的底部； 这可以通过常规的手 段实现， 例如， 将凸台 324焊接于中分配板 32的底部。 当然， 凸台 324与中 分配板 32还可以具有一体的结构。  Please refer to FIG. 11 , which is a schematic diagram of a specific installation manner of the boss provided by the present invention. As previously mentioned, the boss 324 is disposed at the bottom of the center distribution plate 32; this can be accomplished by conventional means, for example, by welding the boss 324 to the bottom of the center distribution plate 32. Of course, the boss 324 and the middle distribution plate 32 may also have an integral structure.
在一种具体实施方式中， 凸台 324以可拆卸的方式固定安装于中分配板 In a specific embodiment, the boss 324 is fixedly mounted to the middle distribution plate in a detachable manner.
32的底部； 例如， 凸台 324与中分配板 32可以通过相配合的内、 外螺紋连 接于一体。 The bottom of 32; for example, the boss 324 and the middle distribution plate 32 may be integrally connected by a mating inner and outer thread.
这样， 可以针对不同的工艺要求更换、 调整上述凸台 324, 从而不但可 以提高等离子体处理设备的适应性， 还可以显著延长气体分配装置 3的整体 寿命， 降低运行成本。  Thus, the above-described bosses 324 can be replaced and adjusted for different process requirements, which not only improves the adaptability of the plasma processing apparatus, but also significantly extends the overall life of the gas distribution device 3 and reduces operating costs.
本发明所提供的等离子体处理设备包括如上所述的气体分配装置 3; 等 离子体处理设备的其他结构请参考现有技术， 本文不再赘述。 所述等离子体 处理设备具体可以是等离子体刻蚀设备或者等离子体淀积设备。  The plasma processing apparatus provided by the present invention includes the gas distribution device 3 as described above; for other structures of the plasma processing apparatus, please refer to the prior art, and no further description is provided herein. The plasma processing apparatus may specifically be a plasma etching apparatus or a plasma deposition apparatus.
本发明所提供的气体输送方法可以用于向等离子体处理设备的反应腔 室中输送气体， 该气体为多种气体的混合气， 其中若干种气体之间容易发生 反应， 容易发生反应的气体分别自不同的进气路径进入所述反应腔室。 由于 容易反应的气体通过不同的输送路径进入等离子体处理设备的反应腔室， 这 就可以完全消除气体在进入反应腔室之前发生反应的可能。  The gas delivery method provided by the invention can be used for conveying gas into a reaction chamber of a plasma processing apparatus, the gas is a mixture of a plurality of gases, wherein a plurality of gases are easily reacted, and gases that are prone to reaction are respectively The reaction chamber is entered from a different intake path. Since the readily reactive gas enters the reaction chamber of the plasma processing apparatus through different transport paths, this completely eliminates the possibility of gas reacting before entering the reaction chamber.
例如， 上述进气路径可以包括第一进气路径以及第二进气路径， 两者相 互独立。 假定气体曱与气体乙容易发生反应， 则可以通过上述第一进气路径 向反应腔室中输送气体曱， 而通过上述第二进气路径向反应腔室中输送气体 乙。 For example, the intake path may include a first intake path and a second intake path, both Independent of each other. Assuming that the gas enthalpy reacts readily with the gas B, the gas enthalpy can be transported into the reaction chamber through the first intake path, and the gas B can be delivered to the reaction chamber through the second intake path.
由于自不同路径进入的气体在反应腔室中应当较为均匀地混合， 因此， 上述第一进气路径和第二进气路径的数目均可以是多个， 且任一第一进气路 径均临近至少一个第二进气路径， 两者的末端大体均勾分布于所述反应腔室 的顶部。 这样， 自不同路径进入反应腔室的气体可以得到较为充分、 均匀的 混合。  Since the gases entering from different paths should be relatively uniformly mixed in the reaction chamber, the number of the first intake path and the second intake path may be plural, and any of the first intake paths are adjacent. At least one second intake path, the ends of which are generally hooked at the top of the reaction chamber. Thus, gases entering the reaction chamber from different paths can be more fully and uniformly mixed.
上述第一进气路径和第二进气路径的具体形式可以有多种。 一种较易实 现的具体形式是，所述第二进气路径至少在其末端将所述第一进气路径包围， 从而使所述第二进气路径的出气口围绕所述第一进气路径的出气口。 这种结 构形式不但容易实现， 而且有利于自不同路径进入反应腔室的气体进一步均 匀地混合。  The specific forms of the first intake path and the second intake path described above may be various. A specific form that is relatively easy to implement is that the second intake path encloses the first intake path at least at its end such that an air outlet of the second intake path surrounds the first intake air The outlet of the path. This form of construction is not only easy to implement, but also facilitates further uniform mixing of gases entering the reaction chamber from different paths.
此外， 可以进一步改进上述第一进气路径和第二进气路径的末端所处的 位置： 自所述反应腔室的中心位置向外周位置， 所述第一进气路径和第二进 气路径末端所处的位置逐渐降低。 各进气路径末端与等离子体处理设备下电 极的距离越大， 气体在反应腔室中的扩散路径将越长、 扩散也就越充分； 上 述距离越小， 气体在反应腔室中的扩散程度越低。 因此， 上述改进可以促进 反应腔室中部的气体的扩散， 有利于在整体上提高所述下电极上方气体的径 向分布均匀度。  Further, the positions at which the ends of the first intake path and the second intake path are further improved may be further improved: from a central position to an outer peripheral position of the reaction chamber, the first intake path and the second intake path The position at the end is gradually lowered. The greater the distance between the end of each inlet path and the lower electrode of the plasma processing equipment, the longer the diffusion path of the gas in the reaction chamber will be, and the more diffusion will be; the smaller the above distance, the degree of diffusion of gas in the reaction chamber The lower. Therefore, the above improvement can promote the diffusion of gas in the middle of the reaction chamber, which is advantageous in improving the uniformity of the radial distribution of the gas above the lower electrode as a whole.
可以参考上文关于气体分配装置以及等离子体处理设备的描述， 从而更 好地理解本发明所提供的气体输送方法。  Reference may be made to the above description of the gas distribution device and the plasma processing apparatus to better understand the gas delivery method provided by the present invention.
以上对本发明所提供的气体分配装置、应用了该气体分配装置的等离子 体处理设备以及向等离子体处理设备的反应腔室中输送气体的方法进行了详 上实施例的说明只是用于帮助理解本发明的方法及其核心思想。 应当指出， 对于本技术领域的普通技术人员来说， 在不脱离本发明原理的前提下， 还可 以对本发明进行若干改进和修饰， 这些改进和修饰也落入本发明权利要求的 保护范围内。 The above description of the gas distribution device provided by the present invention, the plasma processing apparatus to which the gas distribution device is applied, and the method of transporting gas into the reaction chamber of the plasma processing apparatus are only for helping to understand the present. The method of invention and its core idea. a, It will be apparent to those skilled in the art that the present invention may be modified and modified without departing from the spirit and scope of the invention.

Claims

利 要 求 书 Request
1、 一种气体分配装置， 用于等离子体处理设备， 其特征在于， 包括： 上分配板， 其设置于等离子体处理设备反应腔室上方， 且具有第一进气 孔和第二进气孔， 两者均大体竖直地贯穿该上分配板； A gas distribution device for a plasma processing apparatus, comprising: an upper distribution plate disposed above a reaction chamber of a plasma processing apparatus and having a first inlet hole and a second inlet port , both of which extend substantially vertically through the upper distribution plate;
中分配板， 其设置于所述上分配板下方； 该中分配板与所述上分配板之 间具有相互隔离的第一腔室和第二腔室， 两者分别与所述第一进气孔和第二 进气孔连通； 所述中分配板的底部具有多个向下凸出的凸台， 对应于每一所 述凸台均设置有大体竖直地贯穿所述中分配板以及该凸台的第一送气通道， 所述第一送气通道的顶部开口均位于所述第一腔室中； 所述中分配板进一步 具有顶部开口位于所述第二腔室中且竖直贯通该中分配板的第二送气通道； 下分配板， 其设置于所述中分配板下方， 对应于所述凸台而在该下分配 板上设置多个通孔； 每一所述凸台均位于一所述通孔中， 且每一通孔与位于 气通道相连通。  a middle distribution plate disposed under the upper distribution plate; the middle distribution plate and the upper distribution plate have mutually separated first chambers and second chambers, respectively, and the first intake air The hole is connected to the second air inlet hole; the bottom of the middle distribution plate has a plurality of downwardly projecting bosses, and each of the bosses is disposed substantially vertically through the middle distribution plate and the a first air supply passage of the boss, the top opening of the first air supply passage is located in the first chamber; the middle distribution plate further has a top opening in the second chamber and vertically penetrates the middle a second air supply passage of the distribution plate; a lower distribution plate disposed under the middle distribution plate, and a plurality of through holes are disposed on the lower distribution plate corresponding to the boss; each of the bosses is located at a Each of the through holes is in communication with the air passage.
2、 如权利要求 1 所述的气体分配装置， 其特征在于， 所述第一进气孔 位于所述上分配板的中部； 并且所述第一送气通道底部开口的高度具有下述 设置规则： 即， 各所述第一送气通道底部开口的高度自所述中分配板的中部 向外周部逐渐降低， 或者各所述第一送气通道底部开口的高度大致相同。 2. The gas distribution device according to claim 1, wherein: the first intake hole is located in a middle portion of the upper distribution plate; and a height of a bottom opening of the first air supply passage has a setting rule as follows: That is, the height of the bottom opening of each of the first air supply passages gradually decreases from the central portion of the middle distribution plate to the outer peripheral portion, or the height of the bottom opening of each of the first air supply passages is substantially the same.
3、 如权利要求 2所述的气体分配装置， 其特征在于， 所述第一送气通 道的底部开口与其所在通孔的底部开口的高度大体相同。 The gas distribution device according to claim 2, wherein a bottom opening of the first air supply passage is substantially the same as a height of a bottom opening of the through hole.
4、 如权利要求 3 所述的气体分配装置， 其特征在于， 具有相同高度的 所述第一送气通道的底部开口形成围绕所述中分配板中心的圓形或者多边 4. The gas distribution device according to claim 3, wherein a bottom opening of the first gas supply passage having the same height forms a circular or polygonal shape around a center of the middle distribution plate
5、 如权利要求 1 所述的气体分配装置， 其特征在于， 所述凸台可拆卸 地安装于所述中分配板的底部。 The gas distribution device according to claim 1, wherein the boss is detachably attached to a bottom of the middle distribution plate.
6、 如权利要求 5所述的气体分配装置， 其特征在于， 所述凸台通过螺 紋连接于所述中分配板的底部。 The gas distribution device according to claim 5, wherein the boss is connected to the bottom of the middle distribution plate by a screw.
7、 如权利要求 1 所述的气体分配装置， 其特征在于， 所述凸台的横截 面形状、 所述第一送气通道的横截面形状以及所述通孔的横截面形状均为圓 形或者均为正多边形。 7. The gas distribution device according to claim 1, wherein a cross-sectional shape of the boss, a cross-sectional shape of the first air supply passage, and a cross-sectional shape of the through hole are both circular or Both are regular polygons.
8、 如权利要求 7所述的气体分配装置， 其特征在于， 所述第一送气通 道的底部开口以及所述通孔的底部开口均沿各自轴线方向渐扩。 The gas distribution device according to claim 7, wherein the bottom opening of the first gas supply passage and the bottom opening of the through hole are both gradually expanded in respective axial directions.
9、 如权利要求 8所述的气体分配装置， 其特征在于， 所述凸台外壁的 底部渐缩。 The gas distribution device according to claim 8, wherein the bottom of the outer wall of the boss is tapered.
10、 一种等离子体处理设备， 其特征在于， 包括如权利要求 1至 9任一 项所述的气体分配装置。 A plasma processing apparatus comprising the gas distribution device according to any one of claims 1 to 9.
11、 一种气体输送方法， 用于向等离子体处理设备的反应腔室中输送气 体， 其特征在于， 容易发生反应的气体分别自不同的进气路径进入所述反应 腔室。 A gas delivery method for transporting a gas to a reaction chamber of a plasma processing apparatus, characterized in that gases which are susceptible to reaction enter the reaction chamber from different intake paths, respectively.
12、 如权利要求 11 所述的气体输送方法， 其特征在于， 所述进气路径 包括第一进气路径以及与所述第一进气路径相邻的第二进气路径； 所述第一 进气路径和第二进气路径的数目均为多条， 且两者的末端大体均勾地分布于 所述反应腔室的顶部。 12. The gas delivery method according to claim 11, wherein the intake path includes a first intake path and a second intake path adjacent to the first intake path; The number of the intake path and the second intake path are both multiple, and the ends of both are generally distributed on the top of the reaction chamber.
13、 如权利要求 12所述的气体输送方法， 其特征在于， 所述第二进气 路径的末端包围所述第一进气路径的末端。 The gas delivery method according to claim 12, wherein an end of the second intake path surrounds an end of the first intake path.
14、 如权利要求 12所述的气体输送方法， 其特征在于， 自所述反应腔 室的中心位置向外周位置， 所述第一进气路径和第二进气路径末端所处的位 置逐渐降低。 14. The gas delivery method according to claim 12, wherein a position at which the first intake path and the end of the second intake path are gradually lowered from a central position of the reaction chamber to an outer peripheral position .
PCT/CN2009/073411 2008-08-22 2009-08-21 Plasma processing apparatus, gas distribution device and gas delivery method WO2010020195A1 (en)

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