JPS63133617A - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPS63133617A JPS63133617A JP28245286A JP28245286A JPS63133617A JP S63133617 A JPS63133617 A JP S63133617A JP 28245286 A JP28245286 A JP 28245286A JP 28245286 A JP28245286 A JP 28245286A JP S63133617 A JPS63133617 A JP S63133617A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- chamber
- plasma generation
- gas
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000011148 porous material Substances 0.000 claims abstract description 8
- 238000005192 partition Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 54
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 4
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 230000005284 excitation Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造のためのＣＶＤ（Ｃｈｅｍｉ
ｃａｌＶａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）装置、エツ
チング装置、スパッタリング装置等として用いられる電
子サイクロトロン共鳴を利用したプラズマプロセス装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention is directed to CVD (Chemistry) for manufacturing semiconductor devices.
The present invention relates to a plasma processing apparatus using electron cyclotron resonance, which is used as a calvapor deposition apparatus, an etching apparatus, a sputtering apparatus, and the like.
電子サイクロトロン共鳴を利用したプラズマプロセス装
置は低ガス圧で活性度の高いプラズマを生成出来、イオ
ンエネルギの広範囲な選択が可能であり、また大きなイ
オン電流がとれ、イオン流の指向性、均一性に優れるな
どの利点があり、高集積半導体装置の製造等に欠かせぬ
ものとしてその研究、開発が進められている。Plasma processing equipment that uses electron cyclotron resonance can generate highly active plasma at low gas pressure, allows for a wide range of ion energy selections, and can generate large ion currents, improving the directionality and uniformity of ion flow. Due to its superior properties, research and development are progressing as it is indispensable for the production of highly integrated semiconductor devices.
第７図はプラズマＣＶＤ装置として構成した従来の電子
サイクロトロン共鳴利用のプラズマプロセス装置の縦断
面図であり、３１はプラズマ生成室、３３は反応室を示
している。プラズマ生成室３１は上部壁中央には石英ガ
ラス板３１ｂにて封止したマイクロ波導入口３１ｃを、
また下部壁中央には前記マイクロ波導入口３１ｃと対向
する位置にプラズマ引出窓３１ｄを夫々備えており、前
記マイクロ波導入口３１ｃには他端を図示しないマイク
ロ波発信器に接続した導波管３２の一端が接続され、ま
たプラズマ引出窓３１ｄに臨ませて反応室３３が配設さ
れ、更に周囲にはプラズマ生成室３１及びこれに接続し
た導波管３２の一端部にわたってこれらを囲繞する態様
でこれらと同心状に励磁コイル３４を配設しである。FIG. 7 is a longitudinal sectional view of a conventional plasma processing apparatus using electron cyclotron resonance configured as a plasma CVD apparatus, in which numeral 31 indicates a plasma generation chamber and numeral 33 indicates a reaction chamber. The plasma generation chamber 31 has a microwave inlet 31c sealed with a quartz glass plate 31b in the center of the upper wall.
In addition, a plasma extraction window 31d is provided at the center of the lower wall at a position facing the microwave inlet 31c, and the microwave inlet 31c has a waveguide 32 whose other end is connected to a microwave oscillator (not shown). A reaction chamber 33 is disposed so as to face the plasma extraction window 31d, and the plasma generation chamber 31 and one end of the waveguide 32 connected thereto are surrounded by the plasma generation chamber 31 and the waveguide 32 connected thereto. An excitation coil 34 is arranged concentrically with.
反応室３３内にはプラズマ引出窓３１ｄと対向させて半
導体ウェーハ等である試料３５用の載置台３６が設置さ
れ、反応室３３の下部壁には図示しない排気装置に連な
る排気口３３ａを開口せしめである。３１ｇ。A mounting table 36 for a sample 35 such as a semiconductor wafer is installed in the reaction chamber 33 facing the plasma extraction window 31d, and an exhaust port 33a connected to an exhaust device (not shown) is opened in the lower wall of the reaction chamber 33. It is. 31g.
３３ｇは１次、２次のガス供給管を夫々示しており、ガ
ス供給管３１ｇはプラズマ生成室３１の上部壁にあって
マイクロ波導入口３１ｃの周囲近傍に開口され、またガ
ス供給管３３ｇは反応室３３の側壁上部寄りに開口され
ている。33g indicates primary and secondary gas supply pipes, respectively. The gas supply pipe 31g is located in the upper wall of the plasma generation chamber 31 and opens near the microwave inlet 31c, and the gas supply pipe 33g is used for reaction It is opened near the upper side wall of the chamber 33.
而してこのようなプラズマＣＶＤ装置にあっては、載置
台３６上に試料３５を載置しておき、プラズマ生成室３
１、反応室３３内を所要の圧力（１０−’Ｔｏｒｒ以下
）に設定した後、プラズマ生成室３１内に１次ガス供給
管３１ｇを通じてプラズマ維持用ガスを、また反応室３
３内に２次供給管３３ｇを通じてプロセスガスを導入す
る一方、励磁コイル３４にて直流電圧を印加してプラズ
マ生成室３１内に磁場（８７５Ｇ）を形成すると共に、
導波管３２を通じてマイクロ波（２，５４Ｇｌｌｚ）を
導入し、プラズマ生成室３１内に電子サイクロトロン共
鳴条件を成立させてプラズマを生成させ、生成させたプ
ラズマを励磁コイル３４にて形成される反応室３３側に
向かうに従って磁束密度が低下する発散磁界によって反
応室３３内の試料３５に向けて投射せしめ、反応室３３
内に供給されたプロセスガスを分解し、試料３５表面に
シリコン酸化膜等を堆積せしめるようになっている。In such a plasma CVD apparatus, the sample 35 is placed on the mounting table 36, and the plasma generation chamber 3
1. After setting the inside of the reaction chamber 33 to the required pressure (below 10 Torr), supply the plasma maintenance gas into the plasma generation chamber 31 through the primary gas supply pipe 31g, and
A process gas is introduced into the plasma generation chamber 31 through the secondary supply pipe 33g, while a DC voltage is applied by the excitation coil 34 to form a magnetic field (875G) in the plasma generation chamber 31.
A reaction chamber where microwaves (2,54Gllz) are introduced through the waveguide 32, an electron cyclotron resonance condition is established in the plasma generation chamber 31 to generate plasma, and the generated plasma is formed by the excitation coil 34. A diverging magnetic field whose magnetic flux density decreases toward the 33 side is projected toward the sample 35 in the reaction chamber 33.
The process gas supplied therein is decomposed and a silicon oxide film or the like is deposited on the surface of the sample 35.
ところでこのような装置にあっては１次、２次ガス供給
管３１ｇ、３３ｇはいずれも供給管を直接プラズマ生成
室３１、反応室３３の周壁を貫通させて取り付けである
ため、プラズマ生成室３１、反応室３３内におけるガス
の濃度分布のばらつきが大きく、特に２次ガス供給系は
反応室３３内であってプラズマ引出窓３１ｄから離れた
位置に開口しているため、成膜に寄与することなく排出
される量が多く、それだけガス供給量を増大する必要が
あり、真空度維持のために排気装置の出力も大きくしな
ければならない等の悪循環があった。By the way, in such an apparatus, both the primary and secondary gas supply pipes 31g and 33g are attached by directly penetrating the peripheral walls of the plasma generation chamber 31 and the reaction chamber 33. , there are large variations in the gas concentration distribution within the reaction chamber 33, and especially since the secondary gas supply system opens within the reaction chamber 33 at a position away from the plasma extraction window 31d, it does not contribute to film formation. There was a vicious cycle in which a large amount of gas was discharged and the amount of gas supplied had to be increased accordingly, and the output of the exhaust device had to be increased in order to maintain the degree of vacuum.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところはプロセスガスをプラズマ生成室内に
均一に分散供給し、その利用効率を高め得るようにした
プラズマプロセス装置を提供するにある。The present invention has been made in view of the above circumstances, and its purpose is to provide a plasma processing apparatus that can uniformly distribute and supply a process gas into a plasma generation chamber and improve its utilization efficiency. .
本発明にあってはプラズマ生成室内に開口するマイクロ
波導入口の周囲にプロセスガスのバッファ室を設ける。In the present invention, a process gas buffer chamber is provided around the microwave inlet opening into the plasma generation chamber.
本発明はこれによってプロセスガスの濃度のばらつきが
低減され、プラズマ分解が効果的に行われプロセスガス
の節減が図れる。According to the present invention, variations in the concentration of the process gas are thereby reduced, plasma decomposition is effectively performed, and process gas can be saved.
以下本発明をＣＶＤ装置として構成した実施例につき図
面に基づき具体的に説明する。第１図は本発明に係るプ
ラズマプロセス装置（以下本発明装置という）の縦断面
図、第２図はバッファ室の拡大断面図であり、図中１は
プラズマ生成室、２は導波管、３は試料Ｓに対し成膜を
施す試料室たる反応室、４は励磁コイルを示している。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention configured as a CVD apparatus will be specifically described below with reference to the drawings. FIG. 1 is a longitudinal cross-sectional view of a plasma processing apparatus according to the present invention (hereinafter referred to as the present invention apparatus), and FIG. 2 is an enlarged cross-sectional view of a buffer chamber, in which 1 is a plasma generation chamber, 2 is a waveguide, Reference numeral 3 indicates a reaction chamber which is a sample chamber in which a film is formed on the sample S, and 4 indicates an excitation coil.
プラズマ生成室ｌはステンレス鋼等を用いて中空円筒形
に形成され、上部壁中央には石英ガラス板１ｂで閉鎖さ
れたマイクロ波導入口１ｃを備え、また下部壁中央には
前記マイクロ波導入口１ｃと対向する位置にプラズマ引
出窓１ｄを備えており、前記マイクロ波導入口１ｃには
導波管２の一端部が接続され、またプラズマ引出窓１ｄ
にはこれに臨ませて反応室３が配設され、更に周囲には
プラズマ生成室１及びこれに連結された導波管２の一端
部にわたって同心状に励磁コイル４が周設せしめられて
いる。The plasma generation chamber l is formed into a hollow cylindrical shape using stainless steel or the like, and has a microwave inlet 1c closed with a quartz glass plate 1b at the center of the upper wall, and the microwave inlet 1c and the microwave inlet 1c at the center of the lower wall. A plasma extraction window 1d is provided at an opposing position, one end of the waveguide 2 is connected to the microwave introduction port 1c, and the plasma extraction window 1d
A reaction chamber 3 is disposed facing this, and an excitation coil 4 is disposed concentrically around one end of the plasma generation chamber 1 and a waveguide 2 connected thereto. .
導波管２の他端部は図示しないマグネトロンに接続され
ており、ここで発せられたマイクロ波をマイクロ波導入
口１ｃからプラズマ生成室１内に導入するようにしであ
る。励磁コイル４は図示しない直流電源に接続されてお
り、直流電流の通流によってプラズマ生成室ｌ内にマイ
クロ波の導入によりプラズマを生成し得るよう磁界を形
成すると共に、反応室３側に向けて磁束密度が低くなる
発散磁界を形成し、プラズマ生成室１内に生成されたプ
ラズマを反応室３内に投射せしめるようになっている。The other end of the waveguide 2 is connected to a magnetron (not shown), and the microwaves emitted here are introduced into the plasma generation chamber 1 through the microwave introduction port 1c. The excitation coil 4 is connected to a DC power supply (not shown), and by passing a DC current, it forms a magnetic field so that plasma can be generated by introducing microwaves into the plasma generation chamber 1, and also generates a magnetic field toward the reaction chamber 3 side. A diverging magnetic field with a low magnetic flux density is formed, and the plasma generated in the plasma generation chamber 1 is projected into the reaction chamber 3.
反応室３は中空の円筒形に形成され、イオン引出窓１ｄ
と対向する底壁には図示しない排気装置に連なる排気口
３ａを開口してあり、内部には載置台５が設置され、該
載置台５上に基板等の試料Ｓを着脱可能に載置せしめる
ようにしである。The reaction chamber 3 is formed in a hollow cylindrical shape, and has an ion extraction window 1d.
An exhaust port 3a connected to an exhaust device (not shown) is opened in the bottom wall facing the bottom wall, and a mounting table 5 is installed inside, and a sample S such as a substrate is removably placed on the mounting table 5. That's how it is.
そして本発明装置にあってはプラズマ生成室ｌの上部壁
に、ここに設けたマイクロ波導入口１ｃの周囲に位置さ
せてプラズマ維持ガス及びプロセスガスをプラズマ生成
室１内に供給するバッファ室６を設置しである。バッフ
ァ室６は中央部にマイクロ波導入口１ｃを開口したプラ
ズマ生成室１の上部壁周囲を断面下向きの凹溝状であっ
てマイクロ波導入口を取り囲むよう円環状に成形し、プ
ラズマ生成室１との間をガス導入口を兼ねる多数の孔を
備えた円環状の仕切部材である金ｍ６ａにて仕切られ、
またこのバッファ室６の上部周壁には周方向の２箇所に
ガス供給管６ｂ、６ｃの各一端が連結され、更に内部に
は供給されたガスを均一に拡散する手段を構成する例え
ばポーラスタングステン等を材料にして形成した多孔質
物６ｄがガス供給管ｆ３ｈ。In the apparatus of the present invention, a buffer chamber 6 is provided on the upper wall of the plasma generation chamber 1, and is located around the microwave introduction port 1c provided here to supply plasma sustaining gas and process gas into the plasma generation chamber 1. It is installed. The buffer chamber 6 is formed in the upper wall of the plasma generation chamber 1, which has a microwave inlet 1c in the center, in the shape of a downward groove in cross section, and is formed into an annular shape surrounding the microwave inlet. The space is partitioned with gold m6a, which is an annular partition member with many holes that also serve as gas inlets.
Further, one end of each of gas supply pipes 6b and 6c is connected to the upper circumferential wall of the buffer chamber 6 at two locations in the circumferential direction, and a means for uniformly diffusing the supplied gas is provided inside, such as porous tungsten, etc. The porous material 6d formed from the material is the gas supply pipe f3h.
６ｃと金網６ａとの間に配設されている。6c and the wire mesh 6a.
なお、ガス供給管６ｂ、６ｃは使用ガス種に応じて２以
上設置してもよく、またガス供給管６ｂ、６ｃの略中間
位置でバッファ室６を仕切って両ガス供給管６ｂ、６ｃ
から供給されるガスが個々にプラズマ生成室ｌ内に供給
されるようにしてもよい。Note that two or more gas supply pipes 6b, 6c may be installed depending on the type of gas used, and the buffer chamber 6 may be partitioned off at a substantially intermediate position between the gas supply pipes 6b, 6c.
The gases supplied from the plasma generation chamber 1 may be individually supplied into the plasma generation chamber l.
而してこのような本発明装置にあっては、両ガス供給管
６ｂ、６ｃのうちの一方からプラズマ維持ガスを、また
他方からプロセスガスを供給する。供給されたガスは多
孔質物６ｄを通じて拡散された状態でバッファ室６から
金網６ａを経てプラズマ生成室ｌ内、に供給されること
となる。In the apparatus of the present invention, the plasma sustaining gas is supplied from one of the gas supply pipes 6b and 6c, and the process gas is supplied from the other. The supplied gas is diffused through the porous material 6d and is supplied from the buffer chamber 6 into the plasma generation chamber 1 via the wire mesh 6a.
例えば試料Ｓ上にＳｉＯ□膜の形成を行う場合、ＳｉＨ
４千ｏｚの混合ガスが、また一般にＳｉｘＮｙの成膜を
行うときは５ｉＨｎ＋Ｎｚの混合ガスを用いるが、これ
ら５ｉｎ４と０２、又はＳｉｎ、とＮ！を夫々のガス供
給管６ｂ。For example, when forming a SiO□ film on sample S, SiH
A mixed gas of 4,000 oz, and generally when forming a SixNy film, a mixed gas of 5iHn+Nz is used, but these 5in4 and 02, or Sin and N! and the respective gas supply pipes 6b.
６Ｃを通じて個別に、或いは混合状態で同時に、バッフ
ァ室６内へ供給し、廖孔質物６ｄにて拡散させつつプラ
ズマ生成室ｌ内に供給する。6C individually or simultaneously in a mixed state into the buffer chamber 6, and is supplied into the plasma generation chamber 1 while being diffused through the porous material 6d.
第４図は本発明の他の実施例を示す断面図、第５図は同
じくその分解斜視図であり、ガス均一拡散手段として多
孔質物６ｄに代えて半円弧状に湾曲形成したノズル１６
ａ、 １６ｂを夫々その一端をガス供給管６ｂ、６ｃに
連結し、且つ他端をバッファ室６内に沿うよう同方向に
延在せしめである。ノズル１６ａ。FIG. 4 is a sectional view showing another embodiment of the present invention, and FIG. 5 is an exploded perspective view thereof, in which a nozzle 16 curved into a semicircular arc is used as a gas uniform diffusion means instead of the porous material 6d.
a, 16b are connected at one end to the gas supply pipes 6b, 6c, respectively, and their other ends extend in the same direction along the inside of the buffer chamber 6. Nozzle 16a.
１６ｂはいずれもその上面側に多数の吹出口を開口させ
てあり、バッファ室６内の周方向に略均−に分散供給す
るようになっている。このような構成にあってはガス供
給管６ｂ、６ｃから供給されるガスはノズル１６ａ、
１６ｂからバッファ室６内に吹き出され、拡散された状
態でプラズマ生成室ｌ内に供給されることとなり、全体
の構成を簡略化することが可能となる。Each of the air blowers 16b has a large number of air outlets opened on its upper surface side, so that air is distributed and supplied approximately evenly in the circumferential direction within the buffer chamber 6. In such a configuration, the gas supplied from the gas supply pipes 6b and 6c is supplied to the nozzle 16a,
It is blown out from 16b into the buffer chamber 6 and supplied into the plasma generation chamber 1 in a diffused state, making it possible to simplify the overall configuration.
第６図は本発明の更に他の実施例を示す断面図であり、
バッファ室６内に上、下方向に所要の間隔を隔てて夫々
複数の孔２６ａを開口させた仕切機２６をその孔位置を
相互にずらした状態で積層配設してガスの拡散手段を構
成しである。FIG. 6 is a sectional view showing still another embodiment of the present invention,
A gas diffusion means is constituted by stacking partition devices 26 each having a plurality of holes 26a opened in the buffer chamber 6 at required intervals upward and downward, with the positions of the holes being shifted from each other. It is.
このような構成にあっては拡散効果も大きく、しかも製
作が容易、且つ安価に行える効果がある。Such a configuration has the advantage that it has a large diffusion effect, is easy to manufacture, and can be manufactured at low cost.
ガスの拡散単段については上記した構成以外のものであ
ってもよく、従来知られているものを適宜採択すればよ
い。The single gas diffusion stage may have a configuration other than the one described above, and any conventionally known configuration may be adopted as appropriate.
なお、上述の実施例は本発明をＣＶＤ装置に適用した構
成につき説明したが、何らこれに限るものではなく、例
えばエツチング装置、スバソタリング装置として適用し
得ることは言うまでもない。Although the above-described embodiments have been described with reference to the configuration in which the present invention is applied to a CVD apparatus, it is needless to say that the present invention is not limited to this and can be applied to, for example, an etching apparatus or a subsotering apparatus.
（効果〕
以上の如く本発明装置にあってはマイクロ波導入口の周
囲に開口するガス供給口を備えたバッファ室を備えるか
らプラズマ維持ガス、プロセスガスは拡散された状態で
プラズマ生成室内に供給されプラズマ維持ガスとプロセ
スガスとの接触機会も多くなり、試料に対する成膜、或
いはエツチング等の制御を均一、且つ正確に、しかも効
率よく行い得るなど本発明は優れた効果を奏するもので
ある。(Effects) As described above, since the apparatus of the present invention includes a buffer chamber equipped with a gas supply port that opens around the microwave inlet, the plasma sustaining gas and process gas are supplied into the plasma generation chamber in a diffused state. The present invention has excellent effects such as increased opportunities for contact between the plasma sustaining gas and the process gas, and the ability to uniformly, accurately, and efficiently control film formation or etching on a sample.
第１図は本発明装置の模式的縦断面図、第２図は本発明
装置におけるバッファ室の拡大断面図、第３図は本発明
装置に用いるバッファ室の分解斜視図、第４図は本発明
の他の実施例を示すバッファ室の断面図、第５図は同じ
くその分解斜視図、第６図は本発明の更に他の実施例を
示すバッファ室の断面図、第７図は従来仏画の縦断面図
である。
１・・・プラズマ生成室 ２・・・導波管 ３・・・反
応室４・・・励磁コイル ５・・・載置台 ６・・・バ
ッファ室６ａ・・・金Ｍ４６ｂ・・・ガス供給管 ６Ｃ
・・・ガス供給管６ｄ・・・多孔質物 １６ａ、 １６
ｂ・・・ノズル ２６・・・仕切壁特 許 出願人
住友金属工業株式会社代理人 弁理士 河 野
登 夫第 １ 図
′−６゜
第２図
第３図
ｒ４
第４図
第５図
第 ６ 図FIG. 1 is a schematic vertical sectional view of the device of the present invention, FIG. 2 is an enlarged sectional view of the buffer chamber in the device of the present invention, FIG. 3 is an exploded perspective view of the buffer chamber used in the device of the present invention, and FIG. FIG. 5 is an exploded perspective view of the buffer chamber showing another embodiment of the invention, FIG. 6 is a sectional view of the buffer chamber showing still another embodiment of the invention, and FIG. 7 is a conventional Buddhist painting. FIG. 1... Plasma generation chamber 2... Waveguide 3... Reaction chamber 4... Excitation coil 5... Mounting table 6... Buffer chamber 6a... Gold M46b... Gas supply pipe 6C
...Gas supply pipe 6d...Porous material 16a, 16
b...Nozzle 26...Partition wall patent applicant
Sumitomo Metal Industries Co., Ltd. Representative Patent Attorney Kono
Noboru No. 1 Fig.'-6゜Fig. 2 Fig. 3 Fig. r4 Fig. 4 Fig. 5 Fig. 6
Claims (1)
りプラズマを生成するプラズマ生成室と、生成したプラ
ズマを投射すべき試料の載置台を備えた試料室とを有す
るプラズマプロセス装置において、前記プラズマ生成室
に開口するマイクロ波導入口の周囲にプロセスガスをプ
ラズマ生成室に供給するバッファ室を設けたことを特徴
とするプラズマプロセス装置。 ２、前記バッファ室とプラズマ生成室との間はプロセス
ガスの導入口を兼ねる多数の細孔を有する金属製仕切部
材にて隔てられている特許請求の範囲第１項記載のプラ
ズマプロセス装置。 ３、前記バッファ室はプロセスガスのガス分散手段を内
蔵している特許請求の範囲第１項記載のプラズマプロセ
ス装置。 ４、前記ガス分散手段は多孔質物、邪魔板又はノズルを
内蔵している特許請求の範囲第３項記載のプラズマプロ
セス装置。[Scope of Claims] 1. In a plasma processing apparatus having a plasma generation chamber that generates plasma by electron cyclotron resonance using microwaves, and a sample chamber equipped with a sample mounting table onto which the generated plasma is to be projected. . A plasma processing apparatus, characterized in that a buffer chamber for supplying process gas to the plasma generation chamber is provided around a microwave inlet opening into the plasma generation chamber. 2. The plasma processing apparatus according to claim 1, wherein the buffer chamber and the plasma generation chamber are separated by a metal partition member having a large number of pores that also serves as an inlet for the process gas. 3. The plasma processing apparatus according to claim 1, wherein the buffer chamber incorporates a gas dispersion means for the process gas. 4. The plasma processing apparatus according to claim 3, wherein the gas dispersion means incorporates a porous material, a baffle plate, or a nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28245286A JPS63133617A (en) | 1986-11-26 | 1986-11-26 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28245286A JPS63133617A (en) | 1986-11-26 | 1986-11-26 | Plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63133617A true JPS63133617A (en) | 1988-06-06 |
Family
ID=17652609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28245286A Pending JPS63133617A (en) | 1986-11-26 | 1986-11-26 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133617A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613135U (en) * | 1992-07-24 | 1994-02-18 | 日新電機株式会社 | Multi-plate type fluid introduction box |
| JP2000299311A (en) * | 1991-04-04 | 2000-10-24 | Hitachi Ltd | Plasma processing system |
| JP2010199160A (en) * | 2009-02-23 | 2010-09-09 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
-
1986
- 1986-11-26 JP JP28245286A patent/JPS63133617A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000299311A (en) * | 1991-04-04 | 2000-10-24 | Hitachi Ltd | Plasma processing system |
| JPH0613135U (en) * | 1992-07-24 | 1994-02-18 | 日新電機株式会社 | Multi-plate type fluid introduction box |
| JP2010199160A (en) * | 2009-02-23 | 2010-09-09 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
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