WO2009145442A2 - Appareil de fabrication d'un mince film métallique et procédé de fabrication de ce film mince métallique au moyen dudit appareil - Google Patents

Appareil de fabrication d'un mince film métallique et procédé de fabrication de ce film mince métallique au moyen dudit appareil Download PDF

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WO2009145442A2
WO2009145442A2 PCT/KR2009/001627 KR2009001627W WO2009145442A2 WO 2009145442 A2 WO2009145442 A2 WO 2009145442A2 KR 2009001627 W KR2009001627 W KR 2009001627W WO 2009145442 A2 WO2009145442 A2 WO 2009145442A2
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Prior art keywords
metal
thin film
substrate
containing composition
metal thin
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PCT/KR2009/001627
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English (en)
Korean (ko)
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WO2009145442A3 (fr
Inventor
정광춘
조현남
문대규
강민기
서원규
유지훈
Original Assignee
주식회사 잉크테크
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Priority to CN2009801119960A priority Critical patent/CN101983259B/zh
Publication of WO2009145442A2 publication Critical patent/WO2009145442A2/fr
Publication of WO2009145442A3 publication Critical patent/WO2009145442A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D17/00—Pigment pastes, e.g. for mixing in paints
    • C09D17/004—Pigment pastes, e.g. for mixing in paints containing an inorganic pigment
    • C09D17/006—Metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00

Definitions

  • the present invention relates to a metal thin film forming apparatus and a metal thin film forming method using the same, and more particularly, to a metal thin film forming apparatus for rapidly sintering a metal thin film formed on a substrate or the like by indirect heating of microwaves and a metal thin film forming method using the same. It is about.
  • Silver is a precious metal that is not easily oxidized, has excellent electrical and thermal conductivity, and has a catalytic and antibacterial effect. Therefore, silver and silver compounds are generally used in industries such as alloys, plating, medicine, photography, electrical and electronics, textiles, detergents, and home appliances. It is widely used in.
  • silver compounds can be used as catalysts for the synthesis of organic materials and polymers, and in particular, the use of lead in electrical and electronic component circuits, low resistance metallization, printed circuit boards (PCB), flexible printed circuit boards (FPC), and wireless recognition Antennas for RFID tags, electromagnetic shielding and metal patterns in new fields such as plasma displays (PDPs), liquid crystal displays (TFTLCDs), organic light emitting diodes (OLEDs), flexible displays and organic thin film transistors (OTFTs)
  • PDPs plasma displays
  • TFTLCDs liquid crystal displays
  • OLEDs organic light emitting diodes
  • OFTs organic thin film transistors
  • silver paste containing nanoparticles or powder, flake silver and binder resin or solvent is mostly used, or silver compound such as silver nitrate is reacted with other compounds in aqueous solution or organic solvent to form colloid or fine particles.
  • Various types of silver and organic silver compounds are prepared and used. Such silver or organic silver compounds are used to form metal films by various methods such as chemical vapor deposition (CVD), plasma deposition, sputtering, electroplating, electron beam deposition, and laser deposition.
  • the present applicant has excellent stability and solubility as in Korean Patent Laid-Open No. 2006-97271, so that a thin film is easily formed and easily baked at a low temperature of 150 ° C. or lower, thereby increasing A transparent silver ink composition having conductivity and capable of forming a uniform and dense thin film or pattern and a thin film forming method using the same are proposed.
  • the sintering method of the organic silver ink composition may be sintered for 3 to 30 minutes at a low temperature of 400 ° C. or less by resistance heating by a hot plate, an oven, a furnace, or the like. The method is used, but the heat treatment time is relatively long, there is a problem that the productivity is lowered.
  • microwave sintering apparatuses have been proposed and used for rapid sintering of various materials.
  • a sintering apparatus using microwaves is a heat treatment for sintering a metal-containing composition such as a silver ink composition due to the characteristic that microwaves are not absorbed by the metal and reflected. There was a problem that can not be performed.
  • the present invention has been made to solve the above problems, a metal thin film forming apparatus and metal thin film that can shorten the sintering time of the thin film or pattern formed of a metal-containing composition such as silver ink composition by indirect heating by microwave
  • the purpose is to provide a formation method.
  • Metal thin film forming apparatus for achieving the above object is a shielding case; At least one microwave generating unit provided inside the shielding case to output microwaves; At least one microwave absorbing plate disposed to be spaced apart from the microwave generating unit to indirectly heat the substrate coated with the metal-containing composition by microwaves, wherein the microwave absorbing plate includes a main body and a transparent conductive film coated on the main body. It is characterized by.
  • the main body is characterized in that the ceramic substrate, preferably a transparent ceramic substrate made of glass or quartz or the main body is characterized in that the opaque ceramic substrate made of alumina.
  • the transparent conductive film is a conductive material composed of a compound of metal and oxygen or a compound of metal and nitrogen, preferably indium tin oxide (ITO), zinc oxide (ZnO) or tin oxide (SnO 2 ). It is characterized in that the compound of any one selected from metal and oxygen, or a compound of metal and nitrogen which is TiN or TaN.
  • ITO indium tin oxide
  • ZnO zinc oxide
  • SnO 2 tin oxide
  • the microwave absorption plate is characterized in that it is disposed at at least one position of the top, bottom or side of the substrate.
  • a gas supply means for supplying gas into the shielding case is further provided.
  • the method for forming a metal thin film according to the present invention comprises the steps of applying a metal-containing composition to the substrate; Bringing the substrate into close proximity to or in close contact with the microwave absorbing plate on which the transparent conductive film is formed; And a heat treatment step of sintering the metal-containing composition by indirect heating by microwaves to form a metal thin film or pattern.
  • the transparent conductive film is a conductive material consisting of a compound of metal and oxygen or a compound of metal and nitrogen, preferably in indium tin oxide (ITO), zinc oxide (ZnO) or tin oxide (SnO 2 ). It is characterized in that the compound of any one selected metal and oxygen, or a compound of metal and nitrogen which is TiN or TaN.
  • ITO indium tin oxide
  • ZnO zinc oxide
  • SnO 2 tin oxide
  • the metal-containing composition is a silver ink composition containing 1 to 99% by weight of a silver complex compound obtained by reacting a silver compound with an ammonium carbamate or ammonium carbonate-based compound.
  • the heat treatment step the microwave generating unit for outputting microwaves;
  • the substrate is positioned in an apparatus provided with at least one microwave absorbing plate, the microwave is exposed to the microwave absorbing plate and heated, and the metal-containing composition of the substrate is indirectly heated by the heated microwave absorbing plate.
  • the microwave generator preferably outputs a microwave of 10 to 500 W.
  • the heat treatment step is preferably made for 3 seconds to 1 minute.
  • the heat treatment step is preferably carried out under oxygen, nitrogen or mixed gas conditions thereof.
  • the coating of the metal-containing composition is selected by the spin coating, roll coating, spray coating, dip coating, flow coating or doctor blade method characterized in that the application.
  • the application of the metal-containing composition to the printing method selected from dispensing, inkjet printing, offset printing, screen printing, pad printing, gravure printing, flexo printing or litho printing. It is characterized by made.
  • the coating of the metal-containing composition is dissolved by water, alcohol, glycol, acetate, ether, ketone, aliphatic hydrocarbon, aromatic hydrocarbon, halogenated hydrocarbon solvent It is characterized by being applied.
  • the substrate in the step of applying the metal-containing composition to the substrate, is characterized in that it is made of selected from glass, silicon wafer, ceramic or plastic.
  • the rapid sintering of the metal-containing composition such as the silver ink composition enables the excellent electrical conductivity, the effect of quickly obtaining a dense thin film or pattern, and significantly shortens the sintering time of the metal-containing composition
  • FIG. 1 is a view schematically showing the configuration of a metal thin film forming apparatus according to the present invention
  • FIG. 2 is a view schematically showing the configuration of a metal thin film forming apparatus according to another embodiment of the present invention.
  • FIG. 1 is a view schematically showing the configuration of a metal thin film forming apparatus according to the present invention.
  • the metal thin film forming apparatus has a large shielding case 10, a microwave generating unit 20 provided inside the shielding case 10, and outputs microwaves, and the microwave generating unit. And a microwave absorbing plate 30 spaced apart from the 20 and heated by microwaves.
  • the substrate holder 40 further includes a substrate holder 40 for supporting and moving the substrate 100 to which the metal-containing composition is applied.
  • Shielding case 10 is formed of a shielding structure to reduce the loss of microwaves to the outside when the microwave is applied from the microwave generator 20, the maximum, using a metal material, for example, stainless steel or iron plate to reflect the microwave Configure.
  • a metal material for example, stainless steel or iron plate to reflect the microwave Configure.
  • an inlet (not shown) and an outlet (not shown) to which the substrate 100 coated with the metal-containing composition is applied or drawn out for sintering may be separately configured, or one gate (not shown) may be configured to form the substrate ( 100) allow the withdrawal and withdrawal.
  • a stage 11 made of a heat insulating material such as a separate stone. At this time, the stage 11 may be provided with a microwave absorbing plate 30 to be described later on the top.
  • the shielding case 10 includes a gas supply means 50 for supplying a gas that forms a sintering atmosphere therein from the outside into the shielding case 10.
  • a gas supply unit 51 for supplying gas is provided outside the shielding case 10, and a gas supplied from the gas supply unit 51 is provided inside the sidewall of the shielding case 10.
  • the gas supply pipe 53 supplied into the inside is provided.
  • an inert gas such as oxygen, nitrogen, argon, or the like, or a mixture thereof.
  • the present invention is not limited to the above-described gas, and a desired gas may be selected and supplied as necessary.
  • the microwave generator 20 is provided inside the shielding case 10 and generates power when the power is supplied from the power supply 21 provided outside the shielding case 10. Means to disperse in the internal space.
  • one microwave generating unit 20 is provided in the upper region of the shielding case 10.
  • the present invention is not limited thereto, and the volume of the inner space of the shielding case 10 and the area of the substrate 100 to be processed and A plurality of the microwave generator 20 may be provided according to the number.
  • the installation position is not limited to the upper region of the shielding case 10, but may be provided in any one or several regions of the upper, side, or lower regions of the shielding case 10.
  • a magnetron generating 2.4 GHz to the microwave generator 20 is used.
  • the present invention is not limited thereto, and a gyrotron or other microwave generating means oscillating at a higher frequency of 28 GHz may be used.
  • the microwave generator 20 outputs microwaves of 10 to 500 watts (W).
  • W watts
  • the metal-containing composition to be sintered is rapidly sintered to form a metal thin film or a pattern while maintaining physical properties of the thin film, and uniformity of the thin film. It is desirable to be able to improve.
  • the microwave absorbing plate 30 includes a main body 31 and a transparent conductive film 33 coated on the main body 31.
  • the main body 31 is preferably made of a material having heat resistance without reflecting microwaves.
  • a plate-type ceramic substrate made of a ceramic material is used.
  • a transparent ceramic substrate such as glass or quartz or an opaque ceramic substrate such as alumina may be used.
  • the material of the main body 31 is not limited to ceramic, and any material may be used as long as it is heat resistant to withstand the temperature heated by the microwave without reflecting the microwave.
  • the transparent conductive film 33 is a means for absorbing and heating microwaves, and is preferably formed of a conductive material made of a compound of metal and oxygen or a compound of metal and nitrogen.
  • a conductive material made of a compound of metal and oxygen or a compound of metal and nitrogen.
  • ITO indium tin oxide
  • ZnO zinc oxide
  • SnO 2 tin oxide
  • TiN or TaN which is a compound of metal and nitrogen, may be used.
  • the material is not limited to the oxides and nitrides exemplified, and any material, compound, and mixture may be used as long as it is a transparent conductive material capable of absorbing and heating microwaves.
  • the transparent conductive film 33 is formed on the main body 31 by a thin film forming method of various methods such as sputtering, evaporation, chemical vapor deposition, plasma deposition, electroplating, electron beam coating, laser coating, or liquid coating. Coated.
  • the microwave absorbing plate 30 formed of the main body 31 and the transparent conductive film 33 is positioned on the inside of the shielding case 10 and is disposed on a substrate disposed in close proximity or in close contact with the microwave absorbing plate 30.
  • the applied metal-containing composition can be sintered by indirect heating, it may be provided in any shape, arrangement and number.
  • the transparent conductive film 33 may be formed on the upper surface of the plate-shaped main body 31, and the substrate 100 may be disposed thereon.
  • FIG. 2 is a view schematically showing the configuration of a metal thin film forming apparatus according to another embodiment of the present invention.
  • the lower portion, both sides, and the lower portion of the substrate 100 surround the substrate 100.
  • the substrate 31a, 31b, and 31c are disposed on the upper portion, and the transparent conductive films 33a, 33b, and 33c are formed at portions facing the substrate 100, respectively. Indirect heating of 100) can be maximized.
  • the microwave absorbing plate 30 is disposed at the bottom, both sides, and the top, respectively, or integrally, as shown in FIG. 2, at least the substrate 100 may be loaded and unloaded into an interior surrounded by the microwave absorbing plate 30. There must be space to be provided. In this embodiment, as the substrate 100 is horizontally moved through the side portion in which the microwave absorbing plate 30 is not provided, loading and unloading of the substrate 100 may be possible.
  • the shape, arrangement and number of the microwave absorbing plate 30 is not limited to the embodiments shown, the microwave absorbing plate 30 is separately disposed on the side, the upper portion of the substrate 100, or of the substrate 100 Various modifications may be made, such as being arranged to integrally surround a selected one of the bottom, side, or top. However, in order to improve the efficiency of indirect heating by the microwave absorbing plate 30, it is preferable that the transparent conductive film 33 of the microwave absorbing plate 30 is coated on a portion facing the substrate 100.
  • the substrate holder 40 is a means for supporting or moving the substrate 100 coated with the metal-containing composition inside the shielding case 10.
  • the substrate holder 40 is in close contact with or close to the microwave absorption plate 30. If it can support it, it may be provided in any form.
  • FIGS. 1 and 2 illustrate a substrate holder 40 provided in a pin type on a lower surface of the shield case 10.
  • the present invention is not limited thereto, and the substrate holder 40 may be provided at any position of an upper surface or a side surface of the shield case 10.
  • the substrate 100 may be directly supported by the microwave absorbing plate 30 without the substrate holder 40.
  • the substrate holder 40 further includes a driving means (not shown), such as a separate lifting means or horizontal moving means, to closely adhere the substrate 100 supported by the substrate holder 40 to the microwave absorbing plate 30. Or it may be moved to bring it closer.
  • a driving means such as a separate lifting means or horizontal moving means
  • a method of forming a metal thin film using the metal thin film forming apparatus configured as described above is as follows.
  • Method for forming a metal thin film according to the present invention comprises the steps of applying a metal-containing composition to the substrate 100; And heat treating the metal-containing composition by indirect heating by microwaves to form a metal thin film or pattern.
  • the metal containing composition used for this invention is demonstrated.
  • the metal-containing composition was very excellent in stability and solubility, so that a thin film was easily formed, and a silver ink composition that was easily baked even at a low temperature of 150 ° C. or less was used.
  • the silver ink composition is a silver complex compound obtained by reacting an ammonium carbamate or ammonium carbonate-based compound obtained by reacting at least one silver compound of Formula 1 with at least one compound selected from Formulas 2 to 4, or a mixture thereof, and It is prepared by mixing an amine compound or a stabilizer that is one or more compounds selected from Formulas 2-4 or mixtures thereof.
  • the silver compound and the silver complex compound are preferably 1 to 99% by weight, respectively.
  • n is an integer of 1 to 4
  • X is oxygen, sulfur, halogen, cyano, cyanate, carbonate, nitrate, nitrite, sulfate, phosphate, thiocyanate, chlorate, perchlorate,
  • Specific examples of tetrafluoroborate, acetylacetonate, carboxylate and the like include silver oxide, thiocyanated silver, silver sulfide, silver chloride, silver cyanide, silver cyanated silver, silver carbonate, silver nitrate, silver nitrite Silver sulfate, silver phosphate, silver perchlorate, silver tetrafluoroborate, silver acetylacetonated silver, silver acetate, silver lactate, silver oxalate and derivatives thereof, and the like, but are not particularly limited thereto.
  • the use of silver oxide or silver carbonate is more preferred in terms of reactivity and post-treatment.
  • R 1 , R 2 , R 3 , R 4 , R 5 and R 6 may be the same as or different from each other, and are each hydrogen, aliphatic or alicyclic having 1 to 30 carbon atoms.
  • aralkyl groups which are a group alkyl group or an aryl or a mixture thereof, alkyl and aryl groups substituted with a functional group, and a group consisting of a heterocyclic compound, a polymer compound and derivatives thereof, but are not particularly limited thereto.
  • the compound include, for example, ammonium carbamate, ammonium carbonate, ammonium bicarbonate, ethylammonium ethyl carbamate, isopropylammonium isopropyl carbamate, n-butylammonium n -Butyl carbamate, isobutylammonium isobutyl carbamate, t-butylammonium t-butyl carbamate, 2-ethylhexyl ammonium 2-ethylhexyl carbamate, octadecylammonium octadecyl carbamate, 2-methoxyethylammonium 2 -Methoxyethylcarbamate, 2-cyanoethylammonium 2-cyanoethylcarbamate, dibutylammonium dibutylcarbamate, dioctadecylammonium dioctadecylcarbamate,
  • ammonium carbamate or ammonium carbonate type compound are not specifically limited.
  • the silver complex compound may be prepared by reacting an ammonium carbamate or ammonium carbonate compound with a silver compound.
  • a silver compound as shown in formula (1) and at least one ammonium carbamate or ammonium carbonate derivative as shown in formula (2), formula (3) or formula (4) and mixtures thereof may be subjected to atmospheric pressure or When reacting directly or without using a solvent under pressure, alcohols such as water, methanol, ethanol, isopropanol, butanol, glycols such as ethylene glycol and glycerin, acetates such as ethyl acetate, butyl acetate and carbitol acetate, Ethers such as diethyl ether, tetrahydrofuran, dioxane, ketones such as methyl ethyl ketone, acetone, hydrocarbons such as hexane and heptane, aromatics such as benzene and toluene, and chloroform, methylene
  • the silver complex compound obtained by making carbon dioxide react can be used for this invention.
  • the reaction may be performed without using a solvent at atmospheric pressure or under pressure, or by using a solvent.
  • the organic silver complex compound production method of the present invention does not need to be particularly limited. That is, as long as the structure of the final material is the same, any known method may be used. For example, there is no need to specifically limit the solvent for the preparation, the reaction temperature, the concentration, the presence or absence of the use of a catalyst, and the like, and the production yield is also acceptable.
  • the silver ink composition of this embodiment is composed of the above-mentioned silver complex compound and the stabilizer as a primary amine, secondary amine, tertiary amine compound or the ammonium carbamate, carbonate, bicarbonate-based compound or at least one or more of these mixtures. do.
  • a stabilizer for example, as an amine compound, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, isoamylamine, n-hexylamine, 2-ethyl Hexylamine, n-heptylamine, n-octylamine, isooctylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, docodecylamine, cyclopropylamine, cyclopentylamine, cyclohexylamine , Allylamine, hydroxyamine, ammonium hydroxide, methoxyamine, 2-ethanolamine, methoxyethylamine, 2-hydroxypropylamine, methoxypropylamine, cyanoethylamine, ethoxyamine, n- But
  • ammonium carbamate, carbonate, bicarbonate-based compounds specifically as stabilizers for example ammonium carbamate, ammonium carbonate, ammonium bicarbonate, ethylammonium ethyl carbamate, iso Propylammonium isopropylcarbamate, n-butylammonium n-butylcarbamate, isobutylammonium isobutylcarbamate, t-butylammonium t-butylcarbamate, 2-ethylhexylammonium 2-ethylhexylcarbamate, octadecylammonium , Octadecyl carbamate, 2-methoxyethylammonium 2-methoxyethylcarbamate, 2-cyanoethylammonium 2-cyanoethyl carbamate, dibutylammonium dibutylcarbamate, dioctadecylammonium di
  • the amount of such stabilizer used is not particularly limited as long as it meets the ink characteristics of the present invention.
  • the content is preferably 0.1% to 90%, more preferably 1% to 50%, even more preferably 5% to 30% in molar ratio with respect to the silver compound. If it exceeds this range, the conductivity of the thin film may occur, and in the following, the storage stability of the ink may be deteriorated. The deterioration of the storage stability of the ink eventually leads to a failure of the coating film, and moreover, the stabilizing agent is uniform when the stabilizer in the above range is not used when the coating film is fired after coating the silver ink composition as well as the storage stability. It may cause a problem that a dense thin film is not formed or cracks occur.
  • the solvents that can be used include water, methanol, ethanol, isopropanol, butanol, ethylhexyl alcohol, terpineol, alcohols such as ethylene glycol, Glycols such as glycerin, ethyl acetate, butyl acetate, methoxypropyl acetate, carbitol acetate, acetates such as ethyl carbitol acetate, methyl cellosolve, butyl cellosolve, diethyl ether, tetrahydrofuran, dioxane Ethers such as methyl ethyl ketone, acetone, dimethylformamide, ketones such as 1-methyl-2-pyrrolidone, hydrocarbons such as hexane, heptane, paraffin oil, mineral spirits, aromatics such
  • the silver ink composition prepared in the present embodiment is excellent in stability and solubility, and thus can be easily applied to a coating or various printing processes.
  • a thin film is prepared by coating and sintering a substrate such as glass, silicon wafer, ceramic, or plastic. Can be printed directly. Such substrates may be used after washing and degreasing or may be used by special pretreatment.
  • the method of applying the metal-containing composition may include spin coating, roll coating, spray coating, dip coating, flow coating, doctor blade and disk, depending on the properties of the ink. It is possible to select and use fencing, inkjet printing, offset printing, screen printing, pad printing, gravure printing, flexography printing, lithography, and the like.
  • the prepared substrate is heat-treated using the above-described metal thin film forming apparatus.
  • the substrate 100 prepared in the shielding case 10 is first introduced into the substrate holder 40.
  • the substrate holder 40 is moved to bring the substrate 100 into close contact with or close to the microwave absorbing plate 30.
  • the metal-containing composition applied to the substrate 100 while heating, for example, the silver ink composition of this embodiment, is sintered. That is, the organic material contained in the silver ink composition is removed by evaporation, and as the silver is sintered, a fine thin silver film is formed.
  • the microwave generating unit 20 preferably outputs microwaves of 10 to 500 W within 3 seconds to 1 minute, preferably 30 seconds, so that the sintering of the metal-containing composition applied to the substrate proceeds quickly, Alternatively, it is preferable to maintain the physical properties of the pattern and to improve the uniformity of the metal thin film.
  • the heat treatment step may be carried out in an inert atmosphere such as argon, but may be carried out in a gas other than the inert gas, in particular oxygen, nitrogen or mixed gas conditions as necessary.
  • an inert atmosphere such as argon
  • a gas other than the inert gas in particular oxygen, nitrogen or mixed gas conditions as necessary.
  • the glass substrate is introduced into the metal thin film forming apparatus according to the present invention in an atmospheric pressure atmosphere, and the microwave absorbing plate 30 ) At this time, the microwave absorption plate was produced by coating a conductive oxide film on the glass body. Then, the microwave generator generated 100 W of microwaves.
  • the application time of the microwave, the sintering result of the silver ink composition, and the sheet resistance of the sintered thin film were measured and shown in Table 1 below. In this case, the sheet resistance was measured using a 4-point probe.
  • the glass substrate After applying the silver ink composition on the glass substrate in the same manner as in the above embodiment, the glass substrate is introduced into the metal thin film forming apparatus in an atmospheric pressure atmosphere. In this case, however, microwaves were applied to the metal thin film forming apparatus in a state in which the microwave absorbing plate was removed, that is, the substrate 100 was loaded on the stage 11.
  • the application time of the microwave and the sintering result of the silver ink composition are shown in Table 1 below.
  • the hot plate was set at 150 ° C. under atmospheric pressure and the silver ink composition was sintered for 1 to 5 minutes.
  • the sheet resistance of the sintered thin film according to the sintering time, the sintering result of the ink composition, and the sintering time was measured and shown in Table 1 below.
  • the embodiment according to the present invention the sintering of the silver ink composition was completed in 3 seconds by indirect heating by microwave, exhibiting a low sheet resistance of 0.53 ⁇ / ⁇ , excellent density and excellent electrical conductivity A metal silver thin film was formed.
  • the silver ink composition is presented as a composition for forming a metal thin film in the above-described embodiment, but the present invention is not limited thereto, and the present invention is not limited thereto, and the present invention may be any type of metal-containing composition sintered by indirect heating of microwaves. It may be achieved by various embodiments without departing from the spirit.

Abstract

Appareil de fabrication d'un mince film métallique par frittage rapide d'une composition contenant un métal, formée sur un substrat ou analogue, par chauffage indirect aux micro-ondes, et procédé de fabrication d'un tel film au moyen dudit appareil. Cet appareil comprend les éléments constitutifs suivants: coque de protection; au moins une unité de production de micro-ondes disposée dans la coque de protection; et au moins une plaque d'absorption des micro-ondes disposée à l'écart de l'unité de production de micro-ondes et conçue pour chauffer indirectement par micro-ondes la composition contenant un métal. La plaque d'absorption des micro-ondes est constituée d'un corps principal recouvert d'un film transparent. Le procédé de fabrication de l'invention recouvre les opérations suivantes: déplacement du substrat à proximité ou contre la plaque d'absorption des micro-ondes; traitement thermique par frittage de la composition contenant un métal par chauffage indirect aux micro-ondes dans le but de former un mince film métallique ou un motif.
PCT/KR2009/001627 2008-03-31 2009-03-31 Appareil de fabrication d'un mince film métallique et procédé de fabrication de ce film mince métallique au moyen dudit appareil WO2009145442A2 (fr)

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Application Number Priority Date Filing Date Title
CN2009801119960A CN101983259B (zh) 2008-03-31 2009-03-31 金属薄膜形成装置和使用该装置的金属薄膜形成方法

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KR1020080029654A KR100976264B1 (ko) 2008-03-31 2008-03-31 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법
KR10-2008-0029654 2008-03-31

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WO2009145442A2 true WO2009145442A2 (fr) 2009-12-03
WO2009145442A3 WO2009145442A3 (fr) 2010-01-21

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KR101831378B1 (ko) 2011-05-24 2018-02-23 삼성전자 주식회사 반도체 제조 장치
CN102641823B (zh) * 2012-05-14 2015-10-28 中国科学院微电子研究所 一种微波匀胶装置及匀胶方法
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KR20090104296A (ko) 2009-10-06

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