WO2009118784A1 - 発光素子およびその製造方法 - Google Patents
発光素子およびその製造方法 Download PDFInfo
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- WO2009118784A1 WO2009118784A1 PCT/JP2008/000744 JP2008000744W WO2009118784A1 WO 2009118784 A1 WO2009118784 A1 WO 2009118784A1 JP 2008000744 W JP2008000744 W JP 2008000744W WO 2009118784 A1 WO2009118784 A1 WO 2009118784A1
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- conductive member
- thin film
- silicon thin
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- quantum dots
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- 238000000034 method Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 260
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 260
- 239000010703 silicon Substances 0.000 claims abstract description 260
- 239000002096 quantum dot Substances 0.000 claims abstract description 118
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 106
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 20
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 239
- 239000010408 film Substances 0.000 abstract description 153
- 229910052732 germanium Inorganic materials 0.000 description 37
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 238000010586 diagram Methods 0.000 description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 229910005793 GeO 2 Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000005476 size effect Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
- Y10S977/721—On a silicon substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
Definitions
- the present invention relates to a light emitting device and a method for manufacturing the same, and more particularly to a light emitting device using quantum dots and a method for manufacturing the same.
- a semiconductor light emitting device using a semiconductor island structure (quantum dot) is known (Japanese Patent Laid-Open No. 2003-332695).
- This semiconductor light emitting device is composed of n-type AlGaAs / n-type GaAs / InGaAs island structure / compound semiconductor containing nitrogen / p-type GaAs / p-type AlGaAs.
- the InGaAs island structure has an internal stress consisting of compressive stress.
- a compound semiconductor containing nitrogen has a tensile stress. Therefore, the compound semiconductor containing nitrogen is arranged so as to be in contact with the InGaAs island structure, and the internal stress of the InGaAs island structure is reduced by the compound semiconductor containing nitrogen.
- the conventional semiconductor light emitting element is formed on an expensive compound semiconductor substrate by heteroepitaxial growth, which is an advanced technique, and has a problem that the cost is higher than a device using a silicon substrate.
- a conventional light emitting element using silicon dots has a problem in that light emission efficiency is lower than that of a light emitting element using a direct transition type compound semiconductor.
- the present invention has been made to solve such a problem, and an object thereof is to provide a light emitting element capable of improving the light emission efficiency.
- Another object of the present invention is to provide a method for manufacturing a light emitting device capable of improving the light emission efficiency.
- the light emitting element includes the first to third conductive members.
- the first conductive member includes a first quantum dot having a first conductivity type.
- the second conductive member is disposed in contact with the first conductive member and includes a second quantum dot.
- the third conductive member is formed in contact with the second conductive member, includes a third quantum dot having a second conductivity type different from the first conductivity type, and has a barrier energy against electrons of the second It is larger than the conductive member.
- the first conductive member includes a plurality of first quantum dots and a first insulating layer through which a tunnel current flows
- the second conductive member includes a plurality of second quantum dots and a tunnel current
- the third conductive member includes a plurality of third quantum dots and a third insulating layer through which a tunnel current flows.
- the plurality of first quantum dots are randomly arranged in the film thickness direction of the first conductive member, and the plurality of second quantum dots are randomly arranged in the film thickness direction of the second conductive member.
- the plurality of third quantum dots are randomly arranged in the film thickness direction of the third conductive member.
- the first conductivity type is n-type and the second conductivity type is p-type.
- the barrier energy for holes is larger than the barrier energy for electrons
- the barrier energy for electrons is larger than the barrier energy for holes
- the first to third quantum dots are made of silicon dots
- the first conductive member is made of a silicon oxide film containing more silicon than SiO 2
- the second conductive member is made of Si 3 N a silicon nitride film containing more silicon than 4
- the third conductive member SiO x N (4 / 3-2x / 3) a silicon oxynitride containing more silicon than (0 ⁇ x ⁇ 2) It consists of a membrane.
- the light emitting element includes the light emitting layer and the first and second conductive members.
- the light emitting layer includes quantum dots.
- the first conductive member supplies electrons to the light emitting layer through n-type quantum dots.
- the second conductive member supplies holes to the light emitting layer through the p-type quantum dots.
- the first conductive member is made of a silicon oxide film containing more silicon than SiO 2
- the second conductive member is SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2 ) And a silicon oxynitride film containing more silicon.
- the manufacturing method of a light-emitting device includes a first step of depositing a first conductive member including quantum dots on one main surface of a semiconductor substrate, and a second conductive member including quantum dots.
- Introducing conductivity type impurities The fifth step of introducing an impurity of the second conductivity type different from the first conductivity type into the third conductive member, the first conductive member containing the impurity of the first conductivity type, And a sixth step of heat-treating the third conductive member containing the second conductivity type impurity.
- the ratio of the flow rate of the second material gas containing silicon to the flow rate of the first material gas containing oxygen is set to be equal to or higher than the first reference value, so that more silicon than SiO 2 is obtained.
- a first conductive member made of a silicon oxide film containing is deposited on the one main surface.
- the ratio of the flow rate of the second material gas to the flow rate of the third material gas containing nitrogen is set to be equal to or higher than the second reference value, and silicon nitride containing more silicon than Si 3 N 4
- a second conductive member made of a film is deposited on the first conductive member.
- the ratio of the flow rate of the second material gas to the flow rate of the first material gas is set to be equal to or higher than the first reference value, and the second material gas has a flow rate of the third material gas.
- n-type impurities are introduced into the first conductive member
- p-type impurities are introduced into the third conductive member.
- the first conductive member containing n-type impurities and the third conductive member containing p-type impurities are heat-treated in a nitrogen atmosphere.
- one of electrons and holes is supplied to the second conductive member via the quantum dots contained in either one of the first and third conductive members.
- the other of the electrons and holes is supplied to the second conductive member through the quantum dots included in either one of the conductive members.
- the electrons and holes supplied to the second conductive member are confined in the second conductive member and recombine to emit light. That is, in the light emitting device according to the present invention, both electrons and holes are supplied to the second conductive member to emit light.
- the luminous efficiency can be increased.
- FIG. 3 is a first process diagram for explaining a manufacturing method of the light-emitting element shown in FIG. 1.
- FIG. 6 is a second process diagram for explaining the manufacturing method of the light emitting element shown in FIG. 1.
- FIG. 9 is a first process diagram showing a method for manufacturing the semiconductor element shown in FIG. 8.
- FIG. 9 is a second process diagram illustrating a method for manufacturing the semiconductor element illustrated in FIG. 8.
- FIG. 10 is a third process diagram illustrating the method for manufacturing the semiconductor element illustrated in FIG. 8.
- FIG. 10 is a fourth process diagram illustrating the method for manufacturing the semiconductor element illustrated in FIG. 8.
- FIG. 10 is a fifth process diagram illustrating the method for manufacturing the semiconductor element illustrated in FIG. 8.
- FIG. 10 is a sixth process diagram illustrating the method of manufacturing the semiconductor element illustrated in FIG. 8. It is sectional drawing of the further another light emitting element by embodiment of this invention. It is sectional drawing of the further another light emitting element by embodiment of this invention.
- FIG. 1 is a sectional view of a light emitting device according to an embodiment of the present invention.
- a light emitting device 10 according to an embodiment of the present invention includes a substrate 1, an n-type silicon thin film 2, a silicon thin film 3, a p-type silicon thin film 4, and p + -type polysilicon (poly-). Si) film 5 and electrodes 6 and 7 are provided.
- the substrate 1 is made of n + type silicon (n + -Si) having a specific resistance of about 0.1 ⁇ ⁇ cm.
- the n-type silicon thin film 2 contains n-type impurities and contains more Si and oxygen element (O) than SiO 2 . More specifically, the n-type silicon thin film 2 includes a plurality of quantum dots made of n-type Si and a silicon oxide film, as will be described later, and is formed on one main surface of the substrate 1.
- the n-type silicon thin film 2 has a thickness of about 150 nm.
- the silicon thin film 3 contains more Si and nitrogen element (N) than Si 3 N 4 . More specifically, the silicon thin film 3 includes a plurality of quantum dots made of Si and a silicon nitride film, and is formed on the n-type silicon thin film 2 in contact with the n-type silicon thin film 2. The silicon thin film 3 has a thickness of about 10 nm.
- the p-type silicon thin film 4 is formed on the silicon thin film 3 in contact with the silicon thin film 3.
- the p-type silicon thin film 4 contains p-type impurities and contains more Si, oxygen element (O), and nitrogen element (N) than SiO 2 and Si 3 N 4 .
- the p-type silicon thin film 4 includes a plurality of quantum dots made of p-type Si and a silicon oxynitride film and has a composition of SiO 1 N 0.33 , as will be described later.
- the p-type silicon thin film 4 has a thickness of about 100 nm.
- the p + -type poly-Si film 5 is composed of p + -type poly-Si films 51 to 54 and is formed on the p-type silicon thin film 4 in contact with the p-type silicon thin film 4.
- the p + type poly-Si film 5 includes a boron concentration of about 10 20 cm ⁇ 3 and a film thickness of about 50 nm.
- the electrode 6 includes electrodes 61 to 64.
- the electrodes 61 to 64 are formed on the p + type poly-Si films 51 to 54 in contact with the p + type poly-Si films 51 to 54, respectively.
- Each of the electrodes 61 to 64 is made of aluminum (Al).
- the electrode 7 is made of Al, and is formed on the back surface of the substrate 1 (the surface opposite to the surface on which the n-type silicon thin film 2 and the like are formed).
- FIG. 2 is an enlarged cross-sectional view of the n-type silicon thin film 2, the silicon thin film 3, and the p-type silicon thin film 4 shown in FIG.
- n-type silicon thin film 2 includes a plurality of quantum dots 21.
- Each of the plurality of quantum dots 21 is made of n-type Si dots and includes a phosphorus (P) concentration of about 10 19 cm ⁇ 3 .
- the plurality of quantum dots 21 are irregularly arranged in the n-type silicon thin film 2.
- the silicon thin film 3 includes a plurality of quantum dots 31.
- the plurality of quantum dots 31 are irregularly arranged in the silicon thin film 3.
- the p-type silicon thin film 4 includes a plurality of quantum dots 41.
- Each of the plurality of quantum dots 41 is made of p-type Si dots and includes a B concentration of about 10 19 cm ⁇ 3 .
- the plurality of quantum dots 41 are irregularly arranged in the p-type silicon thin film 4.
- the n-type silicon thin film 2 includes quantum dots 21 made of n-type Si dots
- the silicon thin film 3 contains quantum dots 31 made of Si dots
- the p-type silicon thin film 4 is made of p-type Si dots. Quantum dots 41 are included. Therefore, the n-type silicon thin film 2, the silicon thin film 3, and the p-type silicon thin film 4 form a pin junction.
- the quantum dots 21, 31, and 41 have a diameter of 1 to 10 nm.
- FIG. 3 is an energy band diagram at the time of zero bias of the light emitting element 10 shown in FIG. Referring to FIG. 3, conduction band Ec1 and valence band Ev1 exist in n + Si constituting substrate 1, and n + Si has an energy band gap Eg1 of 1.12 eV.
- p + poly-Si film 5 has an energy band gap Eg1 of 1.12 eV.
- n + Si constituting the substrate 1 is highly doped with P, and the p + poly-Si film 5 is highly doped with B, the end of the conduction band Ec1 of n + Si is p + Energy close to the end of the valence band Ev2 of the poly-Si film 5.
- the n-type silicon thin film 2 includes the plurality of quantum dots 21 as described above, the n-type silicon thin film 2 has a stacked structure of the quantum dots 21 and the silicon dioxide (SiO 2 ) layer 22 that does not include the quantum dots 21. As a result, the quantum dots 21 are sandwiched between the SiO 2 layers 22.
- the SiO 2 layer 22 has a film thickness through which a tunnel current flows and an energy band gap of about 9 eV. Further, since the quantum dot 21 is sandwiched between the two SiO 2 layers 22, the quantum level effect has a sub-level L sub 1 on the n + Si conduction band Ec 1 side due to the quantum size effect, and the n + Si valence electrons. The sub-level L sub 2 is provided on the band Ev1 side.
- the sub-level L sub 1 is higher in energy than the conduction band Ec1 of n + Si, and the sub-level L sub 2 is higher in energy than the end of the valence band Ev1 of n + Si.
- the energy difference between the sub-level L sub 1 and the sub-level L sub 2 is larger than the energy gap Eg1 of n + Si.
- the silicon thin film 3 includes the plurality of quantum dots 31 as described above, the silicon thin film 3 has a stacked structure of the quantum dots 31 and the silicon nitride film (Si 3 N 4 ) layer 32 that does not include the quantum dots 31. As a result, the quantum dots 31 are sandwiched between the Si 3 N 4 layers 32.
- the Si 3 N 4 layer 32 has a film thickness through which a tunnel current flows and an energy band gap of about 5.2 eV. Further, since the quantum dot 31 is sandwiched between the two Si 3 N 4 layers 32, the quantum dot 31 has a sub-level L sub 3 on the conduction band Ec 2 side of the p + poly-Si film 5 due to the quantum size effect. The p + poly-Si film 5 has a sublevel L sub 4 on the valence band Ev4 side.
- the sub-level L sub 3 is energetically higher than the end of the conduction band Ec2 of the p + poly-Si film 5, and the sub-level L sub 4 is the end of the valence band Ev2 of the p + poly-Si film 5 Higher in energy.
- the energy difference between the sub-level L sub 3 and the sub-level L sub 4 is larger than the energy gap Eg 1 of the p + poly-Si film 5.
- the p-type silicon thin film 4 includes the plurality of quantum dots 41 as described above, the p-type silicon thin film 4 has a stacked structure of the quantum dots 41 and the silicon oxynitride film 42 that does not include the quantum dots 41. As a result, the quantum dots 41 are sandwiched between the silicon oxynitride films 42.
- the silicon oxynitride film 42 has a film thickness through which a tunnel current flows, has a composition of SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2), and has an energy band of 5.2 to 9 eV. Has a gap.
- the quantum dots 41 because it is sandwiched by two silicon oxynitride film 42, the quantum size effect, has a sub-level L sub 5 in the conduction band Ec2 side of p + Si, the valence of p + Si
- the sub-level L sub 6 is provided on the electron band Ev2 side.
- the sub-level L sub 5 is energetically higher than the conduction band Ec2 of p + Si, and the sub-level L sub 6 is energetically higher than the end of the valence band Ev2 of p + Si.
- the energy difference between the sub-level L sub 5 and the sub-level L sub 6 is larger than the energy gap Eg1 of p + Si.
- the energy difference ⁇ E5 the end of the conduction band edge and the silicon oxynitride film 42 of the conduction band Ec2 of p + Si is 2.32 ⁇ 3.2 eV
- the energy difference ⁇ E6 between the silicon oxynitride film 42 and the edge of the valence band is about 1.78 to 4.65 eV.
- the silicon oxynitride film 42 that satisfies ⁇ E5 ⁇ E6 can be formed.
- FIG. 4 is an energy band diagram of the light emitting element 10 shown in FIG.
- a voltage is applied between the electrodes 6 and 7 with the electrode 6 side being positive and the electrode 7 side being negative, as shown in FIG. 4, the energy band of n + Si constituting the substrate 1 is lifted, and electrons in n + Si 11 conducts through the n-type silicon thin film 2 through the plurality of quantum dots 21 in the n-type silicon thin film 2 and is injected into the silicon thin film 3.
- the p-type silicon thin film 4 Since the p-type silicon thin film 4 has a larger barrier to electrons than the silicon thin film 3, the electrons injected into the silicon thin film 3 are blocked by the p-type silicon thin film 4, and the quantum dots of the silicon thin film 3 31 is accumulated.
- the holes 12 in the p + poly-Si film 5 are conducted through the p-type silicon thin film 4 through the quantum dots 41 in the p-type silicon thin film 4 and are injected into the silicon thin film 3. Since the n-type silicon thin film 2 has a larger barrier against holes than the silicon thin film 3, the holes injected into the silicon thin film 3 are blocked by the n-type silicon thin film 2, and the silicon thin film 3 Accumulated in the quantum dots 31.
- the electrons 13 accumulated in the quantum dots 31 recombine with the holes 14 accumulated in the quantum dots 31 to emit light.
- the light emitting element 10 As described above, in the light emitting element 10, electrons injected from n + Si 1 into the silicon thin film 3 are confined in the silicon thin film 3 by the p-type silicon thin film 4, and injected from the p + poly-Si film 5 into the silicon thin film 3. The holes are confined in the silicon thin film 3 by the n-type silicon thin film 2. That is, the light emitting element 10 is characterized in that both holes and electrons are confined in the p-type silicon thin film 3. As a result, the light emission efficiency of the light emitting element 10 can be increased.
- the n-type silicon thin film 2 includes a plurality of quantum dots 21 irregularly
- the silicon thin film 3 includes a plurality of quantum dots 31 irregularly
- the p-type silicon thin film 4 includes a plurality of quantum dots 41 irregularly. Since it is included in the rule, the injection efficiency of electrons and holes is improved by the electric field enhancement effect at the protrusions of the irregularly shaped quantum dots 21, 31, 41.
- the luminous efficiency can be increased.
- FIG. 5 is a schematic view of a plasma CVD (Chemical Vapor Deposition) apparatus used for manufacturing the light emitting element 10 shown in FIG.
- a plasma CVD apparatus 100 includes a reaction chamber 101, an electrode plate 102, a sample holder 103, a heater 104, an RF (Radio Frequency) power source 105, pipes 106 to 108, and a gas cylinder 109 to 111.
- RF Radio Frequency
- the reaction chamber 101 is a hollow container and has an exhaust port 101A.
- the electrode plate 102 and the sample holder 103 have a flat plate shape, and are disposed in the reaction chamber 101 substantially in parallel at an interval of 50 mm.
- Each of the electrode plate 102 and the sample holder 103 has a diameter of 200 mm ⁇ .
- the heater 104 is disposed in the sample holder 103.
- the RF power source 105 is connected to the electrode plate 102 and the sample holder 103.
- the pipe 106 has one end connected to the reaction chamber 101 and the other end connected to a gas cylinder 109.
- the pipe 107 has one end connected to the reaction chamber 101 and the other end connected to the gas cylinder 110.
- the pipe 108 has one end connected to the reaction chamber 101 and the other end connected to the gas cylinder 111.
- the sample holder 103 holds the substrate 1.
- the heater 104 heats the substrate 1 to a predetermined temperature.
- the RF power source 105 applies 13.56 MHz RF power between the electrode plate 102 and the sample holder 103.
- the gas cylinder 109 holds N 2 O (100%) gas, the gas cylinder 110 holds 10% SiH 4 gas diluted with hydrogen (H 2 ) gas, and the gas cylinder 111 contains NH 3 (100%). Hold the gas.
- the pipe 106 supplies N 2 O gas into the reaction chamber 101.
- the pipe 107 supplies SiH 4 gas into the reaction chamber 101.
- the pipe 108 supplies NH 3 gas into the reaction chamber 101.
- N 2 O gas, SiH 4 gas, and NH 3 gas supplied into the reaction chamber 101 are exhausted from the exhaust port 101A by an exhaust device (not shown) such as a rotary pump. As a result, the inside of the reaction chamber 101 is set to a predetermined pressure.
- the plasma CVD apparatus 100 applies RF power between the electrode plate 102 and the sample holder 103 by the RF power source 105 in a state where N 2 O gas and SiH 4 gas are supplied into the reaction chamber 101, and a silicon-rich oxide film. Is deposited on the substrate 1.
- the plasma CVD apparatus 100 applies silicon-rich silicon nitride by applying RF power between the electrode plate 102 and the sample holder 103 by the RF power source 105 in a state where NH 3 gas and SiH 4 gas are supplied into the reaction chamber 101. A film is deposited on the substrate 1.
- the plasma CVD apparatus 100 applies RF power between the electrode plate 102 and the sample holder 103 by the RF power source 105 in a state where N 2 O gas, NH 3 gas, and SiH 4 gas are supplied into the reaction chamber 101. Then, a silicon rich oxynitride film is deposited on the substrate 1.
- FIG. 6 and 7 are first and second process diagrams for explaining a method of manufacturing the light-emitting element 10 shown in FIG.
- substrate 1 made of n + Si is prepared (see step (a)), and after cleaning substrate 1, sample holder of plasma CVD apparatus 100 A substrate 1 is set on 103.
- a silicon thin film 11 containing more Si and oxygen element (O) than SiO 2 is deposited on one main surface of the substrate 1 under the reaction conditions shown in Table 1.
- a silicon thin film 12 containing more Si than Si 3 N 4 and nitrogen element (N) is deposited on the silicon thin film 11 under the reaction conditions shown in Table 2.
- a silicon thin film 13 containing more Si, oxygen element (O), and nitrogen element (N) than SiO 2 and Si 3 N 4 is deposited on the silicon thin film 12 under the reaction conditions shown in Table 3. To do.
- amorphous silicon (a-Si) film 14 is deposited on the silicon thin film 13 under reaction conditions in which N 2 O gas and NH 3 gas are stopped under the reaction conditions shown in Table 3 (step (b) in FIG. )reference).
- phosphorus ions P +
- the acceleration voltage for ion implantation is set so that P + ions are implanted only into the silicon thin film 11.
- the n-type silicon thin film 2 is formed (see step (d) in FIG. 6).
- boron ions (B + ) are implanted into the silicon thin film 13 and the a-Si film 14 by ion implantation (see step (d) in FIG. 6).
- the acceleration voltage for ion implantation is set so that B + ions are implanted into the silicon thin film 13 and the a-Si film 14.
- the p-type silicon thin film 4 and the p-type a-Si film 14A are formed (see step (e) in FIG. 7).
- the substrate 1 / n-type silicon thin film 2 / silicon thin film 3 / p-type silicon thin film 4 / p-type a-Si film 14A is annealed under the conditions shown in Table 4.
- the p + poly-Si film 5 is patterned into p + poly-Si films 51 to 54 using a photolithography technique (see step (g) in FIG. 7).
- electrodes 6 (61 to 64) are formed on the p + poly-Si films 51 to 54, respectively, and an electrode 7 is formed on the back surface of the substrate 1 (see step (h) in FIG. 7). ). Thereby, the light emitting element 10 is completed.
- the silicon thin film 11 containing quantum dots is formed by using the reaction conditions shown in Table 1, and the silicon thin film 12 containing quantum dots is formed by using the reaction conditions shown in Table 2. Since the silicon thin film 13 including quantum dots is formed by using the reaction conditions shown, the silicon thin film 11, the silicon thin film 12, and the silicon thin film 13 including quantum dots can be formed by one film formation.
- the silicon thin film 11 including the quantum dots made of Si dots is formed using the formation conditions when forming the silicon-rich oxide film, and the silicon thin film 12 containing the quantum dots made of Si dots is It is formed using the formation conditions when forming the silicon-rich nitride film, and the silicon thin film 13 including the quantum dots made of Si dots is formed using the formation conditions when forming the silicon-rich oxynitride film.
- the quantum dots 31 in the silicon thin film 3 and the quantum dots 41 in the p-type silicon thin film 4 SiH against N 2 O gas and NH 3 gas is used.
- the flow ratio of the four gases is relatively increased, and the heat treatment time in step (e) in FIG. 7 is shortened to about several seconds.
- the quantum dots 31 in the silicon thin film 3 and the quantum dots 41 in the p-type silicon thin film 4 SiH against N 2 O gas and NH 3 gas is used.
- the flow ratio of the four gases is relatively lowered, and the heat treatment time in step (e) in FIG.
- the density of the quantum dots 21 in the n-type silicon thin film 2, the quantum dots 31 in the silicon thin film 3, and the quantum dots 41 in the p-type silicon thin film 4 is SiH 4 gas with respect to N 2 O gas and NH 3 gas.
- the present invention is not limited to this, and the plasma CVD method is used for n The p-type silicon thin film 2 and the p-type silicon thin film 4 may be formed.
- the n-type silicon thin film 2 is formed by the plasma CVD method using PH 3 gas as the P source gas, and the p-type silicon thin film 4 is formed using B 2 H 6 gas as the B source gas.
- the reaction conditions for forming the n-type silicon thin film 2 are reaction conditions in which the flow rate of PH 3 gas is added to the reaction conditions shown in Table 1, and the reaction conditions for forming the p-type silicon thin film 4 are B 2 H 6. This is a reaction condition in which the gas flow rate is added to the reaction conditions shown in Table 3.
- the n-type silicon thin film 2 is formed using P.
- the present invention is not limited to this, and the n-type silicon thin film 2 may be formed using arsenic (As).
- As ions are implanted only into the n-type silicon thin film 11.
- AsH 3 gas is used as the source gas for As.
- FIG. 8 is a cross-sectional view of another light emitting device according to the embodiment of the present invention.
- the light emitting device according to the present invention may be a light emitting device 10A shown in FIG.
- a light emitting device 10A includes an n-type silicon thin film 2 of the light emitting device 10 shown in FIG. The rest is the same as the light emitting element 10 except for 90.
- the silicon thin film 70 is formed on the substrate 1.
- the silicon thin film 80 is formed on the silicon thin film 70 in contact with the silicon thin film 7.
- the silicon thin film 90 is formed on the silicon thin film 80 in contact with the silicon thin film 80.
- the silicon thin film 70 includes a plurality of SiO 2 films 71 and a plurality of n-type silicon thin films 72.
- the plurality of SiO 2 films 71 and the plurality of n-type silicon thin films 72 are alternately stacked in the thickness direction.
- Each of the plurality of n-type silicon thin films 72 includes a plurality of n-type Si dots 73 and silicon oxide films that are irregularly arranged in the film thickness direction.
- Each of the plurality of SiO 2 films 71 has a thickness of 1 to 5 nm, and each of the plurality of n-type silicon thin films 72 has a thickness of 3 to 10 nm.
- the silicon thin film 80 includes a plurality of Si 3 N 4 films 81 and a plurality of silicon thin films 82.
- the plurality of Si 3 N 4 films 81 and the plurality of silicon thin films 82 are alternately stacked in the thickness direction.
- Each of the plurality of silicon thin films 82 includes a plurality of Si dots 83 and silicon nitride films that are irregularly arranged in the film thickness direction.
- Each of the plurality of Si 3 N 4 films 81 has a thickness of 1 to 5 nm, and each of the plurality of silicon thin films 82 has a thickness of 3 to 10 nm.
- the silicon thin film 90 includes a plurality of SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) films 91 and a plurality of p-type silicon thin films 92.
- a plurality of SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) films 91 and a plurality of p-type silicon thin films 92 are alternately stacked in the thickness direction.
- Each of the plurality of p-type silicon thin films 92 includes a plurality of p-type Si dots 93 and silicon oxynitride films that are irregularly arranged in the film thickness direction.
- Each of the plurality of SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) films 91 has a thickness of 1 to 5 nm
- each of the plurality of p-type silicon thin films 92 includes: It has a film thickness of 3 to 10 nm.
- Each of the plurality of n-type Si dots 73 includes a P concentration substantially the same as the P concentration in the quantum dots 21.
- Each of the plurality of p-type Si dots 93 includes substantially the same B concentration as the B concentration in the quantum dots 31.
- the n-type silicon thin film 72 is sandwiched between the SiO 2 films 71 containing no dopant, the silicon thin film 82 is sandwiched between the Si 3 N 4 films 81 containing no dopant, and SiO x N containing no dopant.
- the p-type silicon thin film 92 is sandwiched between the films 91. Therefore, the light-emitting device according to the present invention uses quantum dots (n-type Si dots 73 or Si dots 83 or p-type Si dots 93) as insulating members (SiO 2 film 71 or Si 3 N 4 film 81 or SiO x without dopant).
- N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) film 91) may be used.
- FIG. 9 to 14 are first to sixth process diagrams showing a method of manufacturing the semiconductor element 10A shown in FIG. 8, respectively.
- substrate 1 is prepared (see step (a)), and after substrate 1 is cleaned, SiH 4 gas and N 2 O gas are used as source gases.
- a SiO 2 film 71 is formed on the entire surface of the substrate 1 by plasma CVD (see step (b)). In this case, under the reaction conditions shown in Table 1, the SiO 2 film 71 is formed by setting the flow rate of SiH 4 gas to 86 sccm and the flow rate of N 2 O gas to 200 sccm.
- SiO 2 film 71 Thereafter, using SiH 4 gas and N 2 O gas as raw materials, more Si and oxygen element (O) than SiO 2 are deposited on the SiO 2 film 71 by plasma CVD using the reaction conditions shown in Table 1. A silicon thin film 120 is deposited (see step (c) in FIG. 9).
- step (b) and the step (c) are repeatedly executed, and a plurality of SiO 2 films 71 and a plurality of silicon thin films 120 are alternately formed on the substrate 1 (see step (d) in FIG. 9).
- SiO 2 film 71 by plasma CVD using the reaction conditions shown in Table 2. Is deposited (see step (e) in FIG. 9).
- an Si 3 N 4 film 81 is deposited on the silicon thin film 130 by plasma CVD using SiH 4 gas and NH 3 gas as raw materials (see step (f) in FIG. 10).
- the Si 3 N 4 film 81 is formed by setting the flow rate of SiH 4 gas to 92 sccm and the flow rate of NH 3 gas to 150 sccm.
- the step (e) and the step (f) are repeatedly executed, and a plurality of Si 3 N 4 films 81 and a plurality of silicon thin films 130 are alternately formed on the SiO 2 film 71.
- a silicon thin film 140 is deposited on the Si 3 N 4 film 81 by plasma CVD using the reaction conditions shown in Table 3 using SiH 4 gas, N 2 O gas, and NH 3 gas as raw materials (step of FIG. 10). (See (g)).
- a SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) film 91 is deposited on the silicon thin film 140 by plasma CVD using SiH 4 gas, N 2 O gas, and NH 3 gas as raw materials.
- SiH 4 gas is set to 96 sccm
- the flow rate of NH 3 gas is set to 150 sccm
- the flow rate of N 2 O gas is set to 150 sccm
- step (g) and the step (h) are repeatedly executed, and a plurality of SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) films 91 and a plurality of silicon thin films 140 are alternately formed into Si.
- a 3 N 4 film 81 is formed.
- the a-Si film 14 was formed into SiO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2 ) under the reaction conditions shown in Table 3 in which NH 3 gas and N 2 O gas were stopped. ) Deposit on the film 91 (see step (i) in FIG. 11).
- P + ions are implanted into the silicon thin film 120 by ion implantation (see step (j) in FIG. 11).
- the acceleration voltage for ion implantation is set so that P + ions are implanted only into the plurality of silicon thin films 120.
- a plurality of n-type silicon thin films 72 are formed (see step (k) in FIG. 12).
- B + ions are implanted into the silicon thin film 130 and the a-Si film 14 by ion implantation (see step (k) in FIG. 12).
- the acceleration voltage for ion implantation is set so that B + ions are implanted into the plurality of silicon thin films 130 and the a-Si film 14.
- a plurality of p-type silicon thin films 82, a plurality of silicon thin films 92, and a p-type a-Si film 14A are formed (see step (l) in FIG. 12).
- the type a-Si film 14A is annealed under the conditions shown in Table 4.
- the p + poly-Si film 5 is patterned into p + poly-Si films 51 to 54 using a photolithography technique (see step (n) in FIG. 13).
- electrodes 6 (61 to 64) are formed on the p + poly-Si films 51 to 54, respectively, and an electrode 7 is formed on the back surface of the substrate 1 (see step (p) in FIG. 14). ). Thereby, the light emitting element 10A is completed.
- the energy band diagram at zero bias of the light emitting element 10A shown in FIG. 8 is the energy band diagram shown in FIG. 3, and the energy band diagram of the light emitting element 10A shown in FIG. It becomes a figure.
- the light emitting element 10A emits light by the same mechanism as the light emitting element 10 described above.
- the light emission efficiency can be increased also in the light emitting element 10A.
- FIG. 15 is a cross-sectional view of still another light emitting device according to the embodiment of the present invention.
- the light emitting element according to the embodiment of the present invention may be a light emitting element 10B shown in FIG.
- a light-emitting element 10B includes a silicon thin film 3 in place of the n-type silicon thin film 2 of the light-emitting element 10 shown in FIG. 1 in place of germanium thin film 2A containing more germanium than GeO 2 into which n-type impurities are introduced.
- GeO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) into which p-type impurities are introduced.
- the n-type germanium thin film 2A has a composition in which the silicon of the n-type silicon thin film 2 is replaced with germanium, and has the same film thickness as the n-type silicon thin film 2.
- the germanium thin film 3A has a composition in which the silicon of the silicon thin film 3 is replaced with germanium, and has the same film thickness as the silicon thin film 3.
- the p-type germanium thin film 4A has a composition in which the silicon of the p-type silicon thin film 4 is replaced with germanium, and has the same film thickness as the p-type silicon thin film 4.
- the n-type germanium thin film 2A is formed under the reaction conditions shown in Table 1 in which the SiH 4 gas is replaced with the GeH 4 gas.
- the germanium thin film 3A is formed under the reaction conditions shown in Table 2 in which the SiH 4 gas is replaced with the GeH 4 gas.
- the p-type germanium thin film 4A is formed under the reaction conditions in which the SiH 4 gas is replaced with the GeH 4 gas under the reaction conditions shown in Table 3.
- the light emitting element 10B is manufactured according to steps (a) to (h) shown in FIGS.
- the energy band diagram of the light emitting element 10B at zero bias is the same as the energy band diagram shown in FIG. 3, and the energy band diagram of the light emitting element 10B at the time of current application is the same as the energy band diagram shown in FIG. is there.
- the light emitting element 10B also has a high luminous efficiency in the same manner as the light emitting element 10.
- FIG. 16 is a cross-sectional view of still another light emitting device according to the embodiment of the present invention.
- the light emitting device according to the embodiment of the present invention may be a light emitting device 10C shown in FIG. Referring to FIG. 16, in light emitting element 10C, silicon thin film 70 of light emitting element 10A shown in FIG. 8 is replaced with germanium thin film 70A, silicon thin film 80 is replaced with germanium thin film 80A, and silicon thin film 90 is replaced with germanium thin film 90A. The others are the same as those of the light emitting element 10A.
- the germanium thin film 70A includes a plurality of GeO 2 films 71A and a plurality of n-type germanium thin films 72A.
- the plurality of GeO 2 films 71A and the plurality of n-type germanium thin films 72A are alternately stacked in the thickness direction.
- Each of the plurality of n-type germanium thin films 72A includes a plurality of n-type Ge dots 73A and germanium oxide films that are irregularly arranged in the film thickness direction.
- Each of the plurality of GeO 2 films 71A has a thickness of 1 to 5 nm, and each of the plurality of n-type germanium thin films 72A has a thickness of 3 to 10 nm.
- the germanium nitride film 80A includes a plurality of Ge 3 N 4 films 81A and a plurality of germanium thin films 82A.
- the plurality of Ge 3 N 4 films 81A and the plurality of germanium thin films 82A are alternately stacked in the thickness direction.
- Each of the plurality of germanium thin films 82A includes a plurality of p-type Ge dots 83A and germanium nitride films that are irregularly arranged in the film thickness direction.
- Each of the plurality of Ge 3 N 4 films 81A has a thickness of 1 to 5 nm, and each of the plurality of germanium thin films 82A has a thickness of 3 to 10 nm.
- the germanium thin film 90A includes a plurality of GeO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) films 91A and a plurality of p-type germanium thin films 92A.
- a plurality of GeO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) films 91A and a plurality of p-type germanium thin films 92A are alternately stacked in the thickness direction.
- Each of the plurality of p-type germanium thin films 92A includes a plurality of p-type Ge dots 93A and germanium oxynitride films that are irregularly arranged in the film thickness direction.
- Each of the plurality of GeO x N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) films 91A has a thickness of 1 to 5 nm
- each of the plurality of p-type germanium thin films 92A includes: It has a film thickness of 3 to 10 nm.
- Each of the plurality of n-type Ge dots 73A includes a P concentration substantially the same as the P concentration in the quantum dots 73.
- Each of the plurality of p-type Ge dots 93 ⁇ / b> A includes a B concentration that is substantially the same as the B concentration in the quantum dots 93.
- the n-type germanium thin film 72A is sandwiched between the GeO 2 films 71A not containing the dopant
- the germanium thin film 82A is sandwiched between the Ge 3 N 4 films 81A not containing the dopant
- GeO x not containing the dopant N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2)
- the p-type germanium thin film 92A is sandwiched between the films 91.
- the light-emitting device uses quantum dots (n-type Ge dots 73A or Ge dots 83A or p-type Ge dots 93A) as insulating members (GeO 2 film 71A or Ge 3 N 4 film 81A or GeO x without dopant). N (4 / 3-2x / 3) (0 ⁇ x ⁇ 2) The film may be sandwiched between the films 91A).
- the light-emitting element includes a light-emitting layer that emits light by recombination of electrons and holes, a first conductive member that supplies electrons to the light-emitting layer through n-type quantum dots, and a p-type quantum element. What is necessary is just to provide the 2nd electrically-conductive member which supplies a hole to a light emitting layer through a dot. This is because if the first and second conductive members that supply both electrons and holes to the light emitting layer are provided, the light emission efficiency in the light emitting layer can be increased.
- the light emitting device according to the present invention may be a light emitting device configured using an oxide film, a nitride film, and an oxynitride film containing an element constituting an organic semiconductor instead of the above-described silicon and germanium.
- each of the n-type silicon thin films 2 and 2A constitutes a “first conductive member”, and each of the silicon thin films 3 and 3A constitutes a “second conductive member”.
- Each of the thin films 4 and 4A constitutes a “third conductive member”.
- the n-type silicon thin films 2 and 2A constitute a “first conductive member”, and each of the silicon thin films 3 and 3A constitutes a “light-emitting layer”.
- Each of 4A constitutes a “second conductive member”.
- each of the silicon thin films 70 and 70A constitutes a “first conductive member”
- each of the silicon thin films 80 and 80A constitutes a “second conductive member”
- the silicon thin film 90 , 90A constitute a “third conductive member”.
- the silicon thin films 70 and 70A constitute the “first conductive member”
- the silicon thin films 80 and 80A constitute the “light emitting layer”
- the silicon thin films 90 and 90A respectively , “Second conductive member”.
- each of the quantum dots 21 and 73 constitutes a “first quantum dot”
- each of the quantum dots 31 and 83 constitutes a “second quantum dot”
- the quantum dot 41 , 93 constitute a “third quantum dot”.
- the quantum dot 73A constitutes a “first quantum dot”
- the quantum dot 83A constitutes a “second quantum dot”
- the quantum dot 93A constitutes a “third quantum dot”. Is configured.
- the present invention is applied to a light emitting element capable of improving luminous efficiency.
- the present invention is applied to a method for manufacturing a light emitting element capable of improving light emission efficiency.
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Abstract
Description
の工程と、第3の導電部材中へ第1の導電型と異なる第2の導電型の不純物を導入する第5の工程と、第1の導電型の不純物を含む第1の導電部材と、第2の導電型の不純物を含む第3の導電部材とを熱処理する第6の工程とを備える。
Claims (12)
- 第1の導電型を有する第1の量子ドットを含む第1の導電部材と、
前記第1の導電部材に接して配置され、第2の量子ドットを含む第2の導電部材と、
前記第2の導電部材に接して形成されるとともに、前記第1の導電型と異なる第2の導電方を有する第3の量子ドットを含み、電子に対する障壁エネルギーが前記第2の導電部材よりも大きい第3の導電部材とを備える発光素子。 - 前記第1の導電部材は、複数個の前記第1の量子ドットとトンネル電流が流れる第1の絶縁層とを含み、
前記第2の導電部材は、複数個の前記第2の量子ドットとトンネル電流が流れる第2の絶縁層とを含み、
前記第3の導電部材は、複数個の前記第3の量子ドットとトンネル電流が流れる第3の絶縁層とを含む、請求の範囲第1項に記載の発光素子。 - 前記複数個の第1の量子ドットは、前記第1の導電部材の膜厚方向にランダムに配置され、
前記複数個の第2の量子ドットは、前記第2の導電部材の膜厚方向にランダムに配置され、
前記複数個の第3の量子ドットは、前記第3の導電部材の膜厚方向にランダムに配置される、請求の範囲第2項に記載の発光素子。 - 前記第1の導電型は、n型であり、
前記第2の導電型は、p型である、請求の範囲第1項に記載の発光素子。 - 前記第1の導電部材において、正孔に対する障壁エネルギーは、電子に対する障壁エネルギーよりも大きく、
前記第3の導電部材において、電子に対する障壁エネルギーは、正孔に対する障壁エネルギーよりも大きい、請求の範囲第4項に記載の発光素子。 - 前記第1から第3の量子ドットは、シリコンドットからなり、
前記第1の導電部材は、SiO2よりも多くのシリコンを含むシリコン酸化膜からなり、
前記第2の導電部材は、Si3N4よりも多くのシリコンを含むシリコン窒化膜からなり、
前記第3の導電部材は、SiOxN(4/3-2x/3)(0<x<2)よりも多くのシリコンを含むシリコン酸窒化膜からなる、請求の範囲第5項に記載の発光素子。 - 量子ドットを含む発光層と、
n型の量子ドットを介して電子を前記発光層へ供給する第1の導電部材と、
p型の量子ドットを介して正孔を前記発光層へ供給する第2の導電部材とを備える発光素子。 - 前記第1の導電部材は、SiO2よりも多くのシリコンを含むシリコン酸化膜からなり、
前記第2の導電部材は、SiOxN(4/3-2x/3)(0<x<2)よりも多くのシリコンを含むシリコン酸窒化膜からなる、請求の範囲第7項に記載の発光素子。 - 量子ドットを含む第1の導電部材を半導体基板の一主面に堆積する第1の工程と、
量子ドットを含む第2の導電部材を前記第1の導電部材上に堆積する第2の工程と、
量子ドットを含む第3の導電部材を前記第2の導電部材上に堆積する第3の工程と、
前記第1の導電部材中へ第1の導電型の不純物を導入する第4の工程と、
前記第3の導電部材中へ前記第1の導電型と異なる第2の導電型の不純物を導入する第5の工程と、
前記第1の導電型の不純物を含む前記第1の導電部材と、前記第2の導電型の不純物を含む前記第3の導電部材とを熱処理する第6の工程とを備える発光素子の製造方法。 - 前記第1の工程において、酸素を含む第1の材料ガスの流量に対するシリコンを含む第2の材料ガスの流量の比を第1の基準値以上に設定してSiO2よりも多くのシリコンを含むシリコン酸化膜からなる前記第1の導電部材が前記一主面に堆積され、
前記第2の工程において、窒素を含む第3の材料ガスの流量に対する前記第2の材料ガスの流量の比を第2の基準値以上に設定してSi3N4よりも多くのシリコンを含むシリコン窒化膜からなる前記第2の導電部材が前記第1の導電部材上に堆積され、
前記第3の工程において、前記第1の材料ガスの流量に対する前記第2の材料ガスの流量の比を前記第1の基準値以上に設定し、かつ、前記第3の材料ガスの流量に対する前記第2の材料ガスの流量の比を前記第2の基準値以上に設定してSiOxN(4/3-2x/3)(0<x<2)よりも多くのシリコンを含むシリコン酸窒化膜からなる前記第3の導電部材が前記第2の導電部材上に堆積される、請求の範囲第9項に記載の発光素子の製造方法。 - 前記第4の工程において、n型の不純物が前記第1の導電部材中へ導入され、
前記第5の工程において、p型の不純物が前記第3の導電部材中へ導入される、請求の範囲第10項に記載の発光素子の製造方法。 - 前記第6の工程において、前記n型の不純物を含む前記第1の導電部材および前記p型の不純物を含む前記第3の導電部材は、窒素雰囲気中で熱処理される、請求の範囲第11項に記載の発光素子の製造方法。
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PCT/JP2008/000744 WO2009118784A1 (ja) | 2008-03-26 | 2008-03-26 | 発光素子およびその製造方法 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9951438B2 (en) | 2006-03-07 | 2018-04-24 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
WO2009014590A2 (en) | 2007-06-25 | 2009-01-29 | Qd Vision, Inc. | Compositions and methods including depositing nanomaterial |
WO2009014707A2 (en) * | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
JP4445556B2 (ja) * | 2008-02-18 | 2010-04-07 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
TWI396294B (zh) * | 2008-11-12 | 2013-05-11 | Academia Sinica | 量子點紅外線偵測器裝置 |
JP5704899B2 (ja) * | 2010-11-16 | 2015-04-22 | キヤノン株式会社 | シリコン発光素子に用いる活性層およびその活性層の製造方法 |
KR101189686B1 (ko) * | 2011-03-22 | 2012-10-10 | 한국표준과학연구원 | 실리콘 양자점에 의한 광활성층 및 이의 제조방법 |
US8455881B2 (en) * | 2011-09-19 | 2013-06-04 | Translucent, Inc. | Ge quantum dots for dislocation engineering of III-N on silicon |
US9929325B2 (en) | 2012-06-05 | 2018-03-27 | Samsung Electronics Co., Ltd. | Lighting device including quantum dots |
CN106467608B (zh) * | 2016-10-11 | 2018-05-01 | 浙江大学常州工业技术研究院 | 一种苝基甲氧基聚乙二醇、其制备方法及基于苝基聚乙二醇的石墨烯分散液制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09102596A (ja) * | 1995-10-04 | 1997-04-15 | Fujitsu Ltd | 量子ドットの製造方法及び量子ドット装置 |
JPH11266055A (ja) * | 1998-03-18 | 1999-09-28 | Ion Kogaku Kenkyusho:Kk | 半導体発光素子およびその製造方法 |
JP2005347465A (ja) * | 2004-06-02 | 2005-12-15 | Sony Corp | 半導体発光デバイスおよび半導体発光デバイス製造方法 |
JP2006228916A (ja) * | 2005-02-17 | 2006-08-31 | Sony Corp | 発光素子 |
JP2006225258A (ja) * | 2005-02-16 | 2006-08-31 | Samsung Electronics Co Ltd | シリコンナノワイヤおよびその製造方法 |
JP2007088311A (ja) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | シリコンドット形成方法及びシリコンドット形成装置 |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4977357A (en) * | 1988-01-11 | 1990-12-11 | Shrier Karen P | Overvoltage protection device and material |
US5568504A (en) * | 1992-12-03 | 1996-10-22 | Siemens Aktiengesellschaft | Surface-emitting laser diode |
US5293050A (en) * | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
JP3572673B2 (ja) | 1994-08-31 | 2004-10-06 | ソニー株式会社 | 量子素子 |
US6358631B1 (en) * | 1994-12-13 | 2002-03-19 | The Trustees Of Princeton University | Mixed vapor deposited films for electroluminescent devices |
CA2239288A1 (en) * | 1996-09-03 | 1998-03-12 | Advanced Vision Technologies, Inc. | Oxide based phosphors and processes therefor |
JPH10155838A (ja) | 1996-11-29 | 1998-06-16 | Yamaha Motor Co Ltd | 小型車両 |
US6236060B1 (en) * | 1997-11-19 | 2001-05-22 | International Business Machines Corporation | Light emitting structures in back-end of line silicon technology |
CA2268997C (en) * | 1998-05-05 | 2005-03-22 | National Research Council Of Canada | Quantum dot infrared photodetectors (qdip) and methods of making the same |
JP3660801B2 (ja) | 1998-06-04 | 2005-06-15 | 三菱電線工業株式会社 | GaN系半導体発光素子 |
US7442953B2 (en) * | 1999-06-14 | 2008-10-28 | Quantum Semiconductor Llc | Wavelength selective photonics device |
US6817466B2 (en) | 2000-11-09 | 2004-11-16 | Honeywell International, Inc. | Apparatus for manufacturing filter cartridges, and method of using same |
US20020136932A1 (en) * | 2001-03-21 | 2002-09-26 | Seikoh Yoshida | GaN-based light emitting device |
US20030021982A1 (en) * | 2001-06-25 | 2003-01-30 | Kotov Nicholas A. | Preparation of graded semiconductor films by the layer-by-layer assembly of nanoparticles |
NZ513637A (en) * | 2001-08-20 | 2004-02-27 | Canterprise Ltd | Nanoscale electronic devices & fabrication methods |
US6805904B2 (en) * | 2002-02-20 | 2004-10-19 | International Business Machines Corporation | Process of forming a multilayer nanoparticle-containing thin film self-assembly |
JP2003332695A (ja) | 2002-05-07 | 2003-11-21 | Ikuo Suemune | ひずみ補償長波長半導体発光素子 |
GB2405262B (en) * | 2002-05-07 | 2006-06-14 | Agere Systems Inc | A multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material |
EP1388903B1 (en) | 2002-08-09 | 2016-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent device |
KR100866948B1 (ko) * | 2003-02-07 | 2008-11-05 | 삼성전자주식회사 | 메모리 기능을 갖는 단전자 트랜지스터 및 그 제조방법 |
JP2004265740A (ja) * | 2003-02-28 | 2004-09-24 | Tdk Corp | El機能膜及びel素子 |
EP1471582A1 (en) * | 2003-03-31 | 2004-10-27 | Ngk Insulators, Ltd. | Substrate for semiconductor light-emitting element, semiconductor light-emitting element and its fabrication |
US7138629B2 (en) * | 2003-04-22 | 2006-11-21 | Ebara Corporation | Testing apparatus using charged particles and device manufacturing method using the testing apparatus |
JP4526252B2 (ja) * | 2003-08-26 | 2010-08-18 | 富士通株式会社 | 光半導体装置及びその製造方法 |
JP4781821B2 (ja) * | 2004-01-23 | 2011-09-28 | Hoya株式会社 | 量子ドット分散発光素子およびその製造方法 |
TWI229465B (en) * | 2004-03-02 | 2005-03-11 | Genesis Photonics Inc | Single chip white light component |
US7427782B2 (en) * | 2004-03-29 | 2008-09-23 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
TWI243489B (en) * | 2004-04-14 | 2005-11-11 | Genesis Photonics Inc | Single chip light emitting diode with red, blue and green three wavelength light emitting spectra |
US7326908B2 (en) * | 2004-04-19 | 2008-02-05 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
TWI281691B (en) * | 2004-08-23 | 2007-05-21 | Ind Tech Res Inst | Method for manufacturing a quantum-dot element |
JP3987519B2 (ja) * | 2004-09-30 | 2007-10-10 | 株式会社東芝 | 屈折率変化装置及び屈折率変化方法 |
TWI249966B (en) * | 2004-10-20 | 2006-02-21 | Genesis Photonics Inc | Light-emitting device having porous light-emitting layer |
JP2006155838A (ja) | 2004-12-01 | 2006-06-15 | Sony Corp | 光ディスクの製造方法、光ディスク、および光ディスク製造用スタンパ |
KR100695143B1 (ko) * | 2005-02-24 | 2007-03-14 | 삼성전자주식회사 | 나노입자 전기발광 소자 및 그 제조방법 |
US20090039764A1 (en) * | 2005-03-17 | 2009-02-12 | Cho Kyung Sang | Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer |
JP4639107B2 (ja) * | 2005-03-31 | 2011-02-23 | 富士通株式会社 | 半導体レーザ及びその製造方法 |
US7265374B2 (en) * | 2005-06-10 | 2007-09-04 | Arima Computer Corporation | Light emitting semiconductor device |
US7180648B2 (en) * | 2005-06-13 | 2007-02-20 | Massachusetts Institute Of Technology | Electro-absorption modulator device and methods for fabricating the same |
US7795609B2 (en) * | 2005-08-05 | 2010-09-14 | Stc.Unm | Densely stacked and strain-compensated quantum dot active regions |
EP1755172A1 (en) * | 2005-08-17 | 2007-02-21 | Ngk Insulators, Ltd. | Semiconductor layered structure and its method of formation, and light emitting device |
US7358101B2 (en) * | 2005-09-06 | 2008-04-15 | Institute Of Nuclear Energy Research | Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots |
TWI291247B (en) * | 2005-11-11 | 2007-12-11 | Univ Nat Chiao Tung | Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices |
JP4435748B2 (ja) * | 2005-12-09 | 2010-03-24 | 富士通株式会社 | 赤外線検知器 |
JP4704215B2 (ja) * | 2005-12-22 | 2011-06-15 | 富士通株式会社 | 半導体量子ドット装置 |
US7679102B2 (en) * | 2005-12-28 | 2010-03-16 | Group Iv Semiconductor, Inc. | Carbon passivation in solid-state light emitters |
US8089080B2 (en) * | 2005-12-28 | 2012-01-03 | Group Iv Semiconductor, Inc. | Engineered structure for high brightness solid-state light emitters |
US7960721B2 (en) * | 2006-05-19 | 2011-06-14 | Siluria Technologies, Inc. | Light emitting devices made by bio-fabrication |
US8089061B2 (en) * | 2006-06-05 | 2012-01-03 | Hoya Corporation | Quantum dot inorganic electroluminescent device |
TWI395335B (zh) * | 2006-06-30 | 2013-05-01 | Applied Materials Inc | 奈米結晶的形成 |
US8884511B2 (en) * | 2006-07-10 | 2014-11-11 | Hewlett-Packard Development Company, L.P. | Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions |
US7615492B2 (en) * | 2006-07-21 | 2009-11-10 | Atomic Energy Council - Institute Of Nuclear Energy Research | Preparing method of CNT-based semiconductor sensitized solar cell |
ATE541023T1 (de) * | 2006-11-01 | 2012-01-15 | Univ Wake Forest | Festkörperbeleuchtungszusammensetzungen und systeme |
JP4749351B2 (ja) * | 2007-01-30 | 2011-08-17 | 富士通株式会社 | 赤外線検出器 |
US7981710B2 (en) | 2007-03-30 | 2011-07-19 | Panasonic Corporation | Light emitting device and manufacturing method |
KR101453082B1 (ko) * | 2007-06-15 | 2014-10-28 | 삼성전자주식회사 | 교류 구동형 양자점 전계발광소자 |
KR20090002787A (ko) * | 2007-07-04 | 2009-01-09 | 삼성전자주식회사 | 트랜지스터 구조를 이용한 발광소자 및 수광소자 |
EP2171764A4 (en) * | 2007-07-18 | 2012-06-27 | Moylechester Ltd | ENVELOPED SOLAR CELL |
US7616272B2 (en) * | 2007-08-17 | 2009-11-10 | Group Iv Semiconductor Inc. | Electroluminescent films for backlighting liquid crystal displays |
US7851307B2 (en) * | 2007-08-17 | 2010-12-14 | Micron Technology, Inc. | Method of forming complex oxide nanodots for a charge trap |
US7777233B2 (en) * | 2007-10-30 | 2010-08-17 | Eastman Kodak Company | Device containing non-blinking quantum dots |
US7989833B2 (en) * | 2008-01-15 | 2011-08-02 | Goeken Group Corp. | Silicon nanoparticle white light emitting diode device |
US7501294B1 (en) * | 2008-02-18 | 2009-03-10 | International Business Machines Corporation | VCSEL for high speed lower power optical link |
JP4445556B2 (ja) | 2008-02-18 | 2010-04-07 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
JP4392045B2 (ja) | 2008-03-19 | 2009-12-24 | 国立大学法人広島大学 | 発光素子およびその製造方法 |
-
2008
- 2008-03-26 JP JP2008548900A patent/JP4392052B2/ja not_active Expired - Fee Related
- 2008-03-26 WO PCT/JP2008/000744 patent/WO2009118784A1/ja active Application Filing
- 2008-03-26 US US12/601,794 patent/US8044382B2/en not_active Expired - Fee Related
-
2011
- 2011-09-20 US US13/237,449 patent/US8330141B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09102596A (ja) * | 1995-10-04 | 1997-04-15 | Fujitsu Ltd | 量子ドットの製造方法及び量子ドット装置 |
JPH11266055A (ja) * | 1998-03-18 | 1999-09-28 | Ion Kogaku Kenkyusho:Kk | 半導体発光素子およびその製造方法 |
JP2005347465A (ja) * | 2004-06-02 | 2005-12-15 | Sony Corp | 半導体発光デバイスおよび半導体発光デバイス製造方法 |
JP2006225258A (ja) * | 2005-02-16 | 2006-08-31 | Samsung Electronics Co Ltd | シリコンナノワイヤおよびその製造方法 |
JP2006228916A (ja) * | 2005-02-17 | 2006-08-31 | Sony Corp | 発光素子 |
JP2007088311A (ja) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | シリコンドット形成方法及びシリコンドット形成装置 |
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