WO2009093289A1 - 半導体レーザ励起固体レーザ装置 - Google Patents
半導体レーザ励起固体レーザ装置 Download PDFInfo
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- WO2009093289A1 WO2009093289A1 PCT/JP2008/000789 JP2008000789W WO2009093289A1 WO 2009093289 A1 WO2009093289 A1 WO 2009093289A1 JP 2008000789 W JP2008000789 W JP 2008000789W WO 2009093289 A1 WO2009093289 A1 WO 2009093289A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1312—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
- G02F1/3507—Arrangements comprising two or more nonlinear optical devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
- G02F1/3548—Quasi phase matching [QPM], e.g. using a periodic domain inverted structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
Definitions
- the present invention relates to a semiconductor laser pumped solid-state laser device.
- an object of the present invention is to provide a semiconductor laser pumped solid-state laser device that can use a type I nonlinear optical crystal or a quasi phase matching element as a third harmonic generation crystal.
- the present invention relates to a semiconductor laser (1) that oscillates excitation laser light, a solid-state laser medium (3) that outputs a fundamental wave by being excited by the excitation laser light, and a second component based on the fundamental wave.
- a second harmonic generation crystal (6) that outputs harmonics and a third harmonic generation crystal (5) that outputs third harmonics from the fundamental wave and the second harmonic waves are fundamental light beams.
- a semiconductor laser pumped solid-state laser device provided in a resonator, wherein the second harmonic generation crystal (6) is a quasi-phase matching element.
- the semiconductor laser pumped solid-state laser device since the polarization directions of the fundamental wave and the second harmonic coincide with each other by using the quasi-phase matching element as the second harmonic generation crystal (6), as the third harmonic generation crystal (5), a type I nonlinear optical crystal or a quasi phase matching element can be used without special polarization operation, and the selection range of the crystal is widened.
- the present invention provides the semiconductor laser pumped solid-state laser device according to the first aspect, wherein the third harmonic generation crystal (5) is a type I nonlinear optical crystal.
- a laser pumped solid state laser device is provided.
- the conversion efficiency can be improved by using a type I nonlinear optical crystal.
- Table 1 in FIG. 7 shows effective nonlinear constants in a typical crystal for generating the third harmonic. It can be seen that Type I has a larger effective nonlinear constant for each crystal.
- the present invention provides the semiconductor laser excitation solid-state laser device according to the first aspect, wherein the third harmonic generation crystal (5) is a quasi phase matching element.
- a solid state laser device is provided.
- the semiconductor laser pumped solid-state laser device according to the third aspect since the nonlinear constant of the quasi phase matching element is large, the crystal length necessary to obtain the required conversion efficiency can be shortened, and the resonator length can be shortened. Shortening the resonator length leads to shortening of the pulse width in the case of pulse oscillation. Ultraviolet laser light with a short pulse width is useful for MALDI / TOF-MS and precision processing. Further, if the crystal length can be shortened, an effect of improving the temperature tolerance of a generally small quasi phase matching element is also expected.
- the present invention provides the semiconductor laser excitation solid-state laser device according to the third aspect, wherein the second harmonic generation crystal (6) and the third harmonic generation crystal (5) are one.
- a semiconductor laser pumped solid-state laser device characterized by being an element.
- the second harmonic generation crystal (6) and the third harmonic generation crystal (5) are combined into a single monolithic structure with inverted polarizations having different periods.
- the present invention relates to the semiconductor laser pumped solid-state laser device according to any one of the first to fourth aspects, wherein the quasi phase matching element has a domain-inverted structure in a stoichiometric LT doped with magnesium.
- a semiconductor laser pumped solid-state laser device characterized in that it is a PPMgSLT fabricated and used as a quasi phase matching element.
- the MgSLT has a high optical damage threshold because the MgSLT uses a PPMgSLT in which a domain-inverted structure is produced in a Mg-doped stoichiometric LT to form a quasi-phase-matched M element.
- a type I nonlinear optical crystal or a quasi phase matching element can be used as the third harmonic generation crystal.
- a stable, small, and highly efficient laser device can be obtained.
- FIG. 1 is an explanatory diagram illustrating a semiconductor laser pumped solid-state laser device 100 according to the first embodiment.
- the semiconductor laser excitation solid-state laser device 100 includes a semiconductor laser 1 that oscillates excitation laser light, a condensing lens system 2 that collects the excitation laser light, and a solid-state laser medium that is excited by the excitation laser light and outputs a fundamental wave.
- a photodiode 10 that receives the third harmonic transmitted through the beam splitter 9, and an APC circuit 11 that drives the semiconductor laser 1 so that the energy or average output of the third harmonic received by the photodiode 10 is constant. It is equipped with.
- the semiconductor laser 1 is temperature-tuned by a Peltier element so that the wavelength of the excitation laser light is, for example, 808.5 nm.
- the solid-state laser medium 3 is, for example, Nd: YAG or Nd: YVO4.
- Nd: YAG is a ceramic obtained by sintering a single crystal or a fine crystal.
- the semiconductor laser side end face of the solid-state laser medium 3 is coated with a high transmittance for excitation laser light, for example, a high reflectance for a fundamental wave having a wavelength of 1064 nm.
- the opposite end face is an AR coat for the fundamental wave.
- the solid laser medium 3 is attached to a metal holder for heat dissipation.
- An optical resonator 8 is configured between the end face of the solid-state laser medium 3 and the mirror 7, and a fundamental wave having a wavelength of 1064 nm, for example, oscillates.
- the operation of the Q switch element 12 is actively performed by turning on / off the acousto-optic element (AOM) with an external signal.
- AOM acousto-optic element
- the second harmonic generation crystal 6 is a quasi phase matching (QPM) element, and is obtained by subjecting LiNbO3, LiTaO3, MgO: LiNbO3, MgO: LiTaO3, KNbO3, KTiOPO4, etc. to polarization inversion.
- the second harmonic generation crystal 6 is tuned to an appropriate temperature by a Peltier element or a heater.
- the third harmonic generation crystal 5 is a type I nonlinear optical crystal, such as LBO, BBO, BIBO, YCOB, GdYCOB.
- the fundamental wave ⁇ reflected by the mirror 7 passes through the second harmonic generation crystal 6 and is converted to a second harmonic 2 ⁇ having a wavelength of 532 nm, for example.
- the fundamental wave ⁇ and the second harmonic 2 ⁇ that come from the second harmonic generation crystal 6 pass through the third harmonic generation crystal 5 and are converted into a third harmonic 3 ⁇ having a wavelength of, for example, 355 nm. .
- the conversion efficiency can be improved.
- FIG. 3 is an explanatory diagram illustrating a semiconductor laser excitation solid-state laser device 200 according to the second embodiment.
- the semiconductor laser excitation solid-state laser device 200 has basically the same configuration as the semiconductor laser excitation solid-state laser device 100 according to the first embodiment, but the third harmonic generation crystal 5 is different from the second harmonic generation crystal 6.
- the fundamental wave ⁇ reflected by the mirror 7 passes through the second harmonic generation crystal 6 and is converted to a second harmonic 2 ⁇ having a wavelength of 532 nm, for example.
- the fundamental wave ⁇ and the second harmonic 2 ⁇ that come from the second harmonic generation crystal 6 pass through the third harmonic generation crystal 5 and are converted into a third harmonic 3 ⁇ having a wavelength of, for example, 355 nm. .
- the semiconductor laser pumped solid-state laser device 200 since the quasi phase matching element is used as the third harmonic generation crystal 5, the crystal selection range and applicable wavelength range are expanded, and the cost is reduced. I can do it. In addition, it contributes to the shortening of the resonator length, and it is possible to generate a short pulse.
- FIG. 5 is an explanatory diagram illustrating a semiconductor laser excitation solid-state laser device 300 according to the third embodiment.
- the semiconductor laser pumped solid-state laser device 300 has basically the same configuration as that of the semiconductor laser pumped solid-state laser device 200 according to the second embodiment.
- the second harmonic generation crystal is formed monolithically with different periods of inversion polarization.
- 6 and the third harmonic generation crystal 5 are formed as one element.
- the semiconductor laser excitation solid-state laser device 300 According to the semiconductor laser excitation solid-state laser device 300 according to the third embodiment, it is possible to perform continuous wavelength conversion of the second harmonic to the third harmonic, and not only miniaturization but also an improvement in reliability is expected.
- the semiconductor laser excitation solid-state laser device of the present invention can be used in the bioengineering field and the measurement field.
- FIG. 1 is a configuration explanatory diagram of a semiconductor laser excitation solid-state laser device according to Example 1.
- FIG. It is explanatory drawing which shows the polarization direction of the fundamental wave in the semiconductor laser excitation solid-state laser apparatus which concerns on Example 1, a 2nd harmonic, and a 3rd harmonic.
- FIG. 5 is a configuration explanatory diagram of a semiconductor laser excitation solid-state laser device according to a second embodiment. It is explanatory drawing which shows the polarization direction of the fundamental wave in the semiconductor laser excitation solid-state laser apparatus which concerns on Example 2, a 2nd harmonic, and a 3rd harmonic.
- FIG. 7 is a configuration explanatory diagram of a semiconductor laser excitation solid-state laser device according to a third embodiment.
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
そこで、本発明の目的は、第3高調波発生用結晶としてタイプIの非線形光学結晶や擬似位相整合素子を用いることが出来る半導体レーザ励起固体レーザ装置を提供することにある。
上記第1の観点による半導体レーザ励起固体レーザ装置では、第2高調波発生用結晶(6)として擬似位相整合素子を用いることにより、基本波と第2高調波の偏光方向が一致するため、第3高調波発生用結晶(5)としてタイプIの非線形光学結晶や擬似位相整合素子を特殊な偏光操作無しで用いることが出来るようになり、結晶の選択幅が広がる。
上記第2の観点による半導体レーザ励起固体レーザ装置では、タイプIの非線形光学結晶を用いることで変換効率を向上しうる。図7の表1に第3高調波発生用の代表的な結晶における有効非線形定数を示す。各結晶ともタイプIの方が有効非線形定数が大きいことが分る。
上記第3の観点による半導体レーザ励起固体レーザ装置では、擬似位相整合素子の非線形定数が大きいために、必要な変換効率を得るために必要な結晶長を短く出来、共振器長を短く出来る。共振器長を短くすることは、パルス発振の場合にパルス幅を短く出来ることにつながる。パルス幅の短い紫外レーザ光はMALDI/TOF-MSや精密加工に有用である。
また、結晶長を短く出来ると、一般的に小さい擬似位相整合素子の温度許容幅が改善される効果も期待される。
上記第4の観点による半導体レーザ励起固体レーザ装置では、異なる周期の反転分極をモノリシックに作り込んで第2高調波発生用結晶(6)と第3高調波発生用結晶(5)とを一つの素子とすることで、第2高調波-第3高調波の連続した波長変換が可能となり、小型化のみならず、信頼性の向上も見込まれる。
上記第5の観点による半導体レーザ励起固体レーザ装置では、MgをドープしたストイキオメトリックLTに分極反転構造を作製して擬似位相整合M素子としたPPMgSLTを用いるため、MgSLTが有する光損傷閾値が高く、紫外光の透過性があるという特徴を有効に利用できる。
この半導体レーザ励起固体レーザ装置100は、励起レーザ光を発振する半導体レーザ1と、励起レーザ光を集光する集光レンズ系2と、励起レーザ光により励起されて基本波を出力する固体レーザ媒質3と、Qスイッチ素子12と、基本波および第2高調波を透過し第3高調波を反射するダイクロイック・ビームスプリッタ4と、基本波から第2高調波を出力する第2高調波発生用結晶(=SHG素子)6と、基本波および第2高調波を反射するミラー7と、第2高調波発生用結晶6側から来た基本波および第2高調波の和周波を発生させることにより第3高調波を出力する第3高調波発生用結晶(=THG素子)5と、ビームスプリッタ4で反射された第3高調波の一部を反射し第3高調波出力Loとし他の一部を透過するビームスプリッタ9と、ビームスプリッタ9を透過した第3高調波を受光するホトダイオード10と、ホトダイオード10で受光する第3高調波のエネルギーまたは平均出力が一定になるように半導体レーザ1を駆動するAPC回路11とを具備している。
固体レーザ媒質3の端面とミラー7との間で光共振器8が構成され、例えば波長1064nmの基本波が発振する。
この半導体レーザ励起固体レーザ装置200は、実施例1に係る半導体レーザ励起固体レーザ装置100と基本的に同じ構成であるが、第3高調波発生用結晶5が第2高調波発生用結晶6と同様の擬似位相整合素子(=QPM素子)であり、例えばマグネシウムをドープしたストイキオメトリックLTに分極反転構造を作製して擬似位相整合素子としたPPMgSLTである。
この半導体レーザ励起固体レーザ装置300は、実施例2に係る半導体レーザ励起固体レーザ装置200と基本的に同じ構成であるが、異なる周期の反転分極をモノリシックに作り込んで第2高調波発生用結晶6と第3高調波発生用結晶5とを一つの素子としたものである。
2 集光レンズ
3 固体レーザ媒質
4 ダイクロイック・ビームスプリッタ
5 第3高調波発生用結晶
6 第2高調波発生用結晶
7 ミラー
8 光共振器
9 ビームスプリッタ
10 ホトダイオード
11 APC回路
12 Qスイッチ素子
100 半導体レーザ励起固体レーザ装置
Claims (8)
- 励起レーザ光を発振する半導体レーザ(1)と、前記励起レーザ光により励起されて基本波を出力する固体レーザ媒質(3)と、前記基本波から第2高調波を出力する第2高調波発生用結晶(6)と、前記基本波および前記第2高調波から第3高調波を出力する第3高調波発生用結晶(5)とを基本波の光共振器内に具備し、前記第2高調波発生用結晶(6)が擬似位相整合素子であることを特徴とする半導体レーザ励起固体レーザ装置。
- 請求項1に記載の半導体レーザ励起固体レーザ装置において、前記第3高調波発生用結晶(5)がタイプIの非線形光学結晶であることを特徴とする半導体レーザ励起固体レーザ装置。
- 請求項1に記載の半導体レーザ励起固体レーザ装置において、前記第3高調波発生用結晶(5)が擬似位相整合素子であることを特徴とする半導体レーザ励起固体レーザ装置。
- 請求項3に記載の半導体レーザ励起固体レーザ装置において、前記第2高調波発生用結晶(6)と前記第3高調波発生用結晶(5)とが一つの素子であることを特徴とする半導体レーザ励起固体レーザ装置。
- 請求項1に記載の半導体レーザ励起固体レーザ装置において、前記擬似位相整合素子が、マグネシウムをドープしたストイキオメトリックLTに分極反転構造を作製して擬似位相整合素子としたPPMgSLTであることを特徴とする半導体レーザ励起固体レーザ装置。
- 請求項2に記載の半導体レーザ励起固体レーザ装置において、前記擬似位相整合素子が、マグネシウムをドープしたストイキオメトリックLTに分極反転構造を作製して擬似位相整合素子としたPPMgSLTであることを特徴とする半導体レーザ励起固体レーザ装置。
- 請求項3に記載の半導体レーザ励起固体レーザ装置において、前記擬似位相整合素子が、マグネシウムをドープしたストイキオメトリックLTに分極反転構造を作製して擬似位相整合素子としたPPMgSLTであることを特徴とする半導体レーザ励起固体レーザ装置。
- 請求項4に記載の半導体レーザ励起固体レーザ装置において、前記擬似位相整合素子が、マグネシウムをドープしたストイキオメトリックLTに分極反転構造を作製して擬似位相整合素子としたPPMgSLTであることを特徴とする半導体レーザ励起固体レーザ装置。
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US12/734,624 US8369366B2 (en) | 2008-01-25 | 2008-03-28 | Semiconductor laser excited solid-state laser device |
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Cited By (4)
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JP2015222425A (ja) * | 2014-05-22 | 2015-12-10 | ジェイディーエス ユニフェイズ コーポレーションJDS Uniphase Corporation | カスケード光高調波発生 |
JP2017219834A (ja) * | 2016-06-08 | 2017-12-14 | ルーメンタム オペレーションズ エルエルシーLumentum Operations LLC | カスケード光高調波発生 |
US10228607B2 (en) | 2014-05-22 | 2019-03-12 | Lumentum Operations Llc | Second harmonic generation |
JP2019106512A (ja) * | 2017-12-14 | 2019-06-27 | 株式会社キーエンス | レーザ加工装置及びレーザ発振器 |
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JP7050024B2 (ja) * | 2019-03-25 | 2022-04-07 | 京セラSoc株式会社 | レーザ装置 |
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JPH05333395A (ja) * | 1992-04-03 | 1993-12-17 | Fuji Photo Film Co Ltd | 光波長変換装置 |
US5850407A (en) * | 1997-11-25 | 1998-12-15 | Lightwave Electronics Corporation | Third-harmonic generator with uncoated brewster-cut dispersive output facet |
WO2006006701A1 (ja) * | 2004-07-15 | 2006-01-19 | Matsushita Electric Industrial Co., Ltd. | コヒーレント光源およびこれを用いた光学装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2015222425A (ja) * | 2014-05-22 | 2015-12-10 | ジェイディーエス ユニフェイズ コーポレーションJDS Uniphase Corporation | カスケード光高調波発生 |
US10228607B2 (en) | 2014-05-22 | 2019-03-12 | Lumentum Operations Llc | Second harmonic generation |
JP2017219834A (ja) * | 2016-06-08 | 2017-12-14 | ルーメンタム オペレーションズ エルエルシーLumentum Operations LLC | カスケード光高調波発生 |
JP2019106512A (ja) * | 2017-12-14 | 2019-06-27 | 株式会社キーエンス | レーザ加工装置及びレーザ発振器 |
JP7169063B2 (ja) | 2017-12-14 | 2022-11-10 | 株式会社キーエンス | レーザ加工装置及びレーザ発振器 |
Also Published As
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JP5293613B2 (ja) | 2013-09-18 |
US20100254413A1 (en) | 2010-10-07 |
JPWO2009093289A1 (ja) | 2011-05-26 |
US8369366B2 (en) | 2013-02-05 |
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