WO2009084203A1 - 移動体駆動方法及び装置、露光方法及び装置、パターン形成方法及び装置、並びにデバイス製造方法 - Google Patents
移動体駆動方法及び装置、露光方法及び装置、パターン形成方法及び装置、並びにデバイス製造方法 Download PDFInfo
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- WO2009084203A1 WO2009084203A1 PCT/JP2008/003960 JP2008003960W WO2009084203A1 WO 2009084203 A1 WO2009084203 A1 WO 2009084203A1 JP 2008003960 W JP2008003960 W JP 2008003960W WO 2009084203 A1 WO2009084203 A1 WO 2009084203A1
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- moving body
- measurement
- exposure
- pattern
- driving
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Definitions
- the present invention relates to a moving body driving method and apparatus, an exposure method and apparatus, a pattern forming method and apparatus, and a device manufacturing method, and more specifically, a moving body driving method and a moving body for driving a moving body along a predetermined plane.
- the present invention relates to a device manufacturing method using a forming method.
- step-and-repeat reduction projection exposure apparatuses such as semiconductor elements (integrated circuits, etc.), liquid crystal display elements, etc.
- steppers step-and-repeat reduction projection exposure apparatuses
- step-and-repeats are mainly used.
- a scanning type reduction projection exposure apparatus a so-called scanning stepper (also called a scanner) or the like is used.
- a wafer stage that holds the wafer includes: For example, it is driven in a two-dimensional direction by a linear motor or the like.
- the position of the wafer stage is generally measured by using a laser interferometer having high stability over a long period of time.
- the inventors have developed an exposure apparatus that employs an encoder that has a measurement resolution comparable to or higher than that of a laser interferometer and is generally less susceptible to air fluctuations than an interferometer as a wafer stage position measurement apparatus.
- Previously proposed see, for example, Patent Document 1).
- the measurement beam continues to be irradiated from the encoder head to the scale on which the diffraction grating is formed for a certain period of time, the scale deforms slightly due to thermal expansion. It has recently been found that can cause measurement errors that cannot be ignored.
- the present invention is a moving body driving method for driving a moving body in a predetermined plane, and a measuring beam is provided on a measurement surface installed on one of the moving body and the outside of the moving body.
- the position of the movable body is measured using a position measurement system including a head installed on the other side of the movable body and the outside of the movable body, and the movable body is driven based on the measurement result And a step of adjusting an irradiation amount of the measurement beam onto the measurement surface.
- the irradiation heat applied to the measurement surface can be adjusted by adjusting the irradiation amount of the measurement beam on the measurement surface, thereby suppressing the distortion of the measurement surface caused by the irradiation heat. Can do. Therefore, it is possible to always maintain high position measurement accuracy and ensure the driving accuracy of the moving body.
- an exposure method for forming a pattern in a partitioned area on an object by irradiating an energy beam wherein the movable body of the present invention is used to form a pattern in the partitioned area.
- the exposure method includes a step of driving a moving body that holds the object using a driving method.
- the moving object holding the object is driven using the moving object driving method of the present invention. Therefore, it becomes possible to form a pattern in the partitioned area on the object with high accuracy.
- a pattern forming method for forming a pattern on an object wherein the object is formed by using the moving body driving method of the present invention in order to form a pattern on the object. It is a pattern formation method including the process of driving the moving body to hold
- the moving body holding the object is driven using the moving body driving method of the present invention. This makes it possible to form a pattern on the object with high accuracy.
- a device manufacturing method including: a step of forming a pattern on an object using the pattern forming method of the present invention; and a step of processing the object on which the pattern is formed. Is the method.
- an exposure method for exposing an object with an energy beam wherein a measurement surface is installed on one of a movable body that holds the object and can move within a predetermined plane, and the outside thereof.
- the position information of the movable body is measured using a position measurement system in which the head is installed on the other side, and the movable body is driven based on the position information; and the measurement is performed by irradiation with the measurement beam. And preventing a physical quantity including at least one of thermal stress on the surface and deformation amount from exceeding a permissible value.
- the physical quantity means a physical quantity related to deformation (including distortion caused by thermal stress) on the measurement surface caused by irradiation of the measurement beam.
- the position information of the moving body is measured using the position measuring system, and the moving body is driven based on the position information. Further, the irradiation of the measurement beam prevents a physical quantity including at least one of thermal stress and deformation on the measurement surface of the position measurement system from exceeding an allowable value. Therefore, it is possible to suppress the distortion of the measurement surface due to the irradiation heat, and thereby it is possible to always maintain high position measurement accuracy and ensure the driving accuracy of the moving body.
- the present invention is a device manufacturing method including exposing an object using the exposure method of the present invention; and developing the exposed object.
- the present invention is a moving body drive device that drives a moving body in a predetermined plane, and a measurement beam is applied to a measurement surface installed on the moving body or on the outside of the moving body.
- the irradiation amount on the measurement surface of the measurement beam is adjusted by driving the moving body using the drive device by the adjustment device. For this reason, the irradiation heat given to a measurement surface is adjusted, and distortion of the measurement surface resulting from the heat can be suppressed. Therefore, it is possible to always maintain high position measurement accuracy and ensure the driving accuracy of the moving body.
- an exposure apparatus for forming a pattern in a partitioned area on an object by irradiating an energy beam, wherein the object is held to form the pattern in the partitioned area. It is an exposure apparatus provided with the moving body drive device of the present invention that drives a moving body within a predetermined plane.
- the moving body holding the object is driven in a predetermined plane by the moving body driving device of the present invention. Therefore, it becomes possible to form a pattern in the partitioned area on the object with high accuracy.
- a pattern forming apparatus for forming a pattern on an object, the movable body being movable while holding the object; a pattern generating apparatus for forming a pattern on the object; And a moving body driving device of the present invention that drives the moving body in a predetermined plane.
- the moving body holding the object is driven in a predetermined plane by the moving body driving device of the present invention. This makes it possible to form a pattern on the object with high accuracy.
- an exposure apparatus for exposing an object with an energy beam, the movable body holding the object and movable within a predetermined plane; the movable body and an exterior of the movable body A measurement beam disposed on one of the moving body and the outside of the moving body, and receiving the reflected light from the head to receive the reflected light.
- a position measurement system that measures the position information of; a drive system that drives the movable body based on the position information; and a physical quantity including at least one of thermal stress and deformation on the measurement surface by the measurement beam.
- An exposure apparatus comprising: a control device for preventing an allowable value from being exceeded.
- the position information of the moving body is measured by the position measurement system, and the moving body is driven by the drive system based on the position information.
- the control device prevents the physical quantity including at least one of the thermal stress and the deformation amount on the measurement surface of the position measurement system from exceeding the allowable value due to the irradiation of the measurement beam. Therefore, it is possible to suppress the distortion of the measurement surface due to the irradiation heat, and thereby it is possible to always maintain high position measurement accuracy and ensure the driving accuracy of the moving body.
- the present invention is a third device manufacturing method including exposing an object using the exposure apparatus of the present invention; and developing the exposed object.
- FIG. 1 shows schematically the structure of the exposure apparatus which concerns on one Embodiment.
- FIG. 1 schematically shows a configuration of an exposure apparatus 100 according to an embodiment.
- the exposure apparatus 100 is a step-and-scan projection exposure apparatus, a so-called scanner.
- a projection optical system PL is provided.
- a reticle and wafer are arranged in a direction perpendicular to the Z-axis direction parallel to the optical axis AX of the projection optical system PL and in a plane perpendicular to the Z-axis direction.
- the direction perpendicular to the Z axis and the Y axis are the X axis directions
- the rotation (tilt) directions around the X axis, the Y axis, and the Z axis are ⁇ x, ⁇ y, and The description will be made with the ⁇ z direction.
- the exposure apparatus 100 includes an illumination system 10, a reticle stage RST, a projection unit PU, a stage apparatus 50 having a wafer stage WST, a control system for these, and the like.
- wafer W is mounted on wafer stage WST.
- the illumination system 10 includes a light source, an illuminance uniformizing optical system including an optical integrator, a reticle blind, and the like (both not shown) as disclosed in, for example, US Patent Application Publication No. 2003/0025890. And an illumination optical system.
- the illumination system 10 illuminates the slit-shaped illumination area IAR on the reticle R defined by the reticle blind (masking system) with illumination light (exposure light) IL with substantially uniform illuminance.
- illumination light IL ArF excimer laser light (wavelength 193 nm) is used.
- reticle stage RST On reticle stage RST, reticle R having a circuit pattern or the like formed on its pattern surface (lower surface in FIG. 1) is fixed, for example, by vacuum suction.
- the reticle stage RST can be finely driven in the XY plane by a reticle stage drive system 11 (not shown in FIG. 1, refer to FIG. 7) including a linear motor, for example, and also in the scanning direction (left and right direction in FIG. 1). In the Y-axis direction) at a predetermined scanning speed.
- Position information (including rotation information in the ⁇ z direction) of the reticle stage RST in the XY plane (moving surface) is transferred by a reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 116 to a movable mirror 15 (in practice, Via a Y moving mirror (or a retroreflector) having a reflecting surface orthogonal to the Y-axis direction and an X moving mirror having a reflecting surface orthogonal to the X-axis direction), for example, about 0.25 nm Always detected with resolution.
- the measurement value of reticle interferometer 116 is sent to main controller 20 (not shown in FIG. 1, refer to FIG. 7).
- Projection unit PU is arranged below reticle stage RST in FIG. 1, and is supported by a main frame (not shown).
- the projection unit PU includes a lens barrel 40 and a projection optical system PL held in the lens barrel 40.
- the projection optical system PL for example, a refractive optical system including a plurality of optical elements (lens elements) arranged along an optical axis AX parallel to the Z-axis direction is used.
- the projection optical system PL is, for example, both-side telecentric and has a predetermined projection magnification (for example, 1/4 times, 1/5 times, or 1/8 times).
- the reticle R in which the first surface (object surface) of the projection optical system PL and the pattern surface are substantially coincided with each other is arranged.
- the illumination light IL that has passed through the projection optical system PL (projection unit PU) a reduced image of the circuit pattern of the reticle R in the illumination area IAR (a reduced image of a part of the circuit pattern) is projected through the projection optical system PL (projection unit PU).
- illumination area IAR illumination light IL
- the pattern of the reticle R is generated on the wafer W by the illumination system 10 and the projection optical system PL, and the sensitive layer (resist layer) on the wafer W is exposed on the wafer W by the illumination light IL. A pattern is formed.
- stage device 50 drives wafer stage WST disposed on base board 12, measurement system 200 (see FIG. 7) for measuring positional information of wafer stage WST, and wafer stage WST.
- a stage drive system 124 (see FIG. 7) and the like are provided.
- the measurement system 200 includes an interferometer system 118, an encoder system 150, a surface position measurement system 180, and the like.
- the wafer stage WST is supported on the base board 12 by a non-contact bearing (not shown) such as an air bearing through a clearance of about several ⁇ m.
- Wafer stage WST includes a stage main body 91 and a wafer table WTB mounted on stage main body 91.
- Wafer table WTB and stage main body 91 are driven by a stage drive system 124 including, for example, a linear motor.
- the wafer W can move on the base board 12 in directions of six degrees of freedom (X, Y, Z, ⁇ x, ⁇ y, ⁇ z).
- a wafer holder (not shown) for holding the wafer W by vacuum suction or the like is provided at the center of the upper surface of the wafer table WTB.
- the measurement plate 30 is arranged on the + Y side of the wafer holder on the upper surface of the wafer table WTB.
- a reference mark FM is arranged at the center of the measurement plate 30, and a pair of aerial image measurement slit patterns (slit-shaped measurement patterns) SL are arranged on both sides of the reference mark FM in the X-axis direction. .
- an optical system, a light receiving element, and the like are arranged inside wafer stage WST. That is, a pair of aerial image measuring devices 45A and 45B (see FIG. 7) including the aerial image measuring slit pattern SL are provided on wafer table WTB. Note that only a part of the optical system may be disposed inside wafer stage WST, and a light receiving element or the like serving as a heat source may be disposed outside wafer stage WST.
- a scale used in an encoder system described later is formed on the upper surface of wafer table WTB. More specifically, Y scales 39Y 1 and 39Y 2 are formed in regions on one side and the other side of the upper surface of wafer table WTB in the X-axis direction (left and right direction in FIG. 2).
- the Y scales 39Y 1 and 39Y 2 are, for example, reflective type gratings (for example, diffraction gratings) in which the Y axis direction is a periodic direction in which grid lines 38 having the X axis direction as the longitudinal direction are arranged at a predetermined pitch in the Y axis direction. ).
- X scale 39X 1 , X scale 39X 1 , and Y scale 39Y 1 and 39Y 2 are sandwiched between one side and the other side in the Y-axis direction (up and down direction in the drawing in FIG. 2) of wafer table WTB. 39X 2 are formed respectively.
- the X scales 39X 1 and 39X 2 are, for example, reflection type gratings (for example, diffraction gratings) in which the X-axis direction is a periodic direction in which grid lines 37 having a longitudinal direction in the Y-axis direction are arranged in the X-axis direction at a predetermined pitch ).
- the pitch of the grid lines 37 and 38 is set to 1 ⁇ m, for example.
- the pitch of the grating is shown larger than the actual pitch for convenience of illustration.
- each scale it is also effective to cover each scale with a glass plate having a low coefficient of thermal expansion in order to protect each diffraction grating.
- a glass plate having the same thickness as the wafer for example, a thickness of 1 mm can be used, and the wafer table so that the surface of the glass plate is the same height (level) as the wafer surface. Installed on top of WST (each scale).
- a reflecting surface 17a and a reflecting surface 17b used in an interferometer system to be described later are formed on the ⁇ Y end surface and the ⁇ X end surface of the wafer table WTB.
- the + Y end surface of wafer table WTB is similar to the CD bar disclosed in International Publication No. 2007/097379 (corresponding to US Patent Application Publication No. 2008/0088843).
- a fiducial bar (hereinafter abbreviated as “FD bar”) 46 extends in the X-axis direction.
- reference gratings (for example, diffraction gratings) 52 that are symmetrically arranged with respect to the center line LL of the wafer table WTB and that have the Y-axis direction as a periodic direction, respectively. Is formed.
- a plurality of reference marks M are formed on the upper surface of the FD bar 46.
- each reference mark M a two-dimensional mark having a size detectable by an alignment system described later is used.
- the surface of the cover glass plate of each scale, the upper surface of the wafer table WTB, the surface of the measurement plate 30, the surface of an FD bar 46 described later, and the surface of the wafer are flush with each other. Further, at least a part of these surfaces may have liquid repellency.
- a primary alignment system AL1 having a detection center at a predetermined distance is provided on the lower surface of the main frame described above.
- AL2 3 and AL2 4 are provided.
- the secondary alignment systems AL2 1 to AL2 4 are fixed to the lower surface of the main frame (not shown) through movable support members, and are driven in the X-axis direction by drive mechanisms 60 1 to 60 4 (see FIG. 7). The relative positions of these detection areas can be adjusted.
- each of the alignment systems AL1, AL2 1 to AL2 4 for example, an image processing type FIA (Field Image Alignment) system is used. Imaging signals from the alignment systems AL1, AL2 1 to AL2 4 are supplied to the main controller 20 through a signal processing system (not shown).
- FIA Field Image Alignment
- position information (including rotation information in the ⁇ z direction) of wafer stage WST (wafer table WTB) in the XY plane is mainly measured using encoder system 150 described later.
- Interferometer system 118 is used when wafer stage WST is located outside the measurement area of encoder system 150 (for example, near unloading position UP (see FIG. 8) and loading position LP (see FIG. 9)). Further, it is used as an auxiliary when correcting (calibrating) long-term fluctuations in the measurement results of the encoder system 150 (for example, due to deformation of the scale over time). Therefore, interferometer system 118 does not necessarily have to be provided for measuring position information of wafer stage WST (wafer table WTB) in the XY plane. On the other hand, interferometer system 118 and encoder system 150 may be used in combination to measure position information of wafer stage WST (wafer table WTB).
- a plurality of encoder systems 150 are configured to measure the position (X, Y, ⁇ z) in the XY plane of the wafer stage WST independently of the interferometer system 118.
- a head unit is provided.
- head units 62A, 62B, 62C, and 62D are arranged on the + X side, + Y side, -X side of the projection unit PU, and -Y side of the primary alignment system AL1, respectively.
- head units 62E and 62F are respectively arranged on both outer sides in the X-axis direction of the alignment systems AL1, AL2 1 to AL2 4 .
- These head units 62A to 62F are fixed to the main frame in a suspended state via support members.
- each of the head units 62A and 62C includes a plurality of (here, five) Y heads 65 1 to 65 5 and Y heads 64 1 to 64 5 .
- the Y heads 65 2 to 65 5 and the Y heads 64 1 to 64 4 are arranged on the reference axis LH with an interval WD.
- Y heads 65 1 and Y head 64 5 are disposed on the -Y side position of a predetermined distance apart projection unit PU in the -Y direction from the reference axis LH.
- the distance in the X-axis direction between the Y heads 65 1 and 65 2 and between the Y heads 64 4 and 64 5 is also set to WD.
- the Y heads 65 1 to 65 5 and the Y heads 64 5 to 64 1 are disposed symmetrically with respect to the reference axis LV.
- the Y heads 65 1 to 65 5 and the Y heads 64 1 to 64 5 are also referred to as the Y head 65 and the Y head 64, respectively, as necessary.
- the head unit 62A uses a Y scale 39Y 1 to measure a Y-axis position (Y position) of the wafer stage WST (wafer table WTB) in the Y-axis direction (Y-lens here) Y linear encoder 70A (FIG. 7). To configure).
- the head unit 62C constitutes a multi-lens (here, 5 eyes) Y linear encoder 70C (see FIG. 7) that measures the Y position of the wafer stage WST (wafer table WTB) using the Y scale 39Y 2 .
- the Y linear encoder is abbreviated as “Y encoder” or “encoder” as appropriate.
- the interval WD in the X-axis direction of the five Y heads 65 and 64 (more precisely, irradiation points on the scale of the measurement beam emitted by the Y heads 65 and 64) provided in the head units 62A and 62C is Y
- the scales 39Y 1 and 39Y 2 are set slightly narrower than the width in the X-axis direction (more precisely, the length of the lattice line 38). Therefore, at the time of exposure, for example, at least one of the five Y heads 65 and 64 always faces the corresponding Y scales 39Y 1 and 39Y 2 (irradiates the measurement beam).
- the head unit 62B includes a plurality of (here, four) X heads 66 5 to 66 8 arranged on the reference axis LV at intervals WD.
- the head unit 62D includes a plurality (four in this case) of X heads 66 1 to 66 4 arranged on the reference axis LV at intervals WD.
- the X heads 66 5 to 66 8 and the X heads 66 1 to 66 4 are also referred to as the X head 66 as necessary.
- the head unit 62B uses the X scale 39X 1 to measure the position (X position) of the wafer stage WST (wafer table WTB) in the X-axis direction (here, four eyes) X linear encoder 70B (FIG. 7). Further, head unit 62D uses the X scale 39X 2, multiview that measures the X-position of wafer stage WST (wafer table WTB) (here 4 eyes) constituting the X linear encoder 70D (refer to FIG. 7) . In the following, the X linear encoder is abbreviated as “encoder” as appropriate.
- the interval WD in the Y-axis direction between adjacent X heads 66 (more precisely, irradiation points on the scale of the measurement beam emitted by the X head 66) included in the head units 62B and 62D is X scale 39X 1 , (more precisely, the length of the grating lines 37) 39X 2 in the Y-axis direction of the width is set narrower than. Therefore, at the time of exposure or alignment, for example, at least one of the total eight X heads 66 included in the head units 62B and 62D always faces the corresponding X scale 39X 1 and 39X 2 (measurement beam). ).
- the distance between the most + Y side X heads 66 4 of the most -Y side of the X heads 66 5 and the head unit 62D of the head unit 62B is the movement of the Y-axis direction of wafer stage WST, between the two X heads
- the width of the wafer table WTB is set to be narrower than the width in the Y-axis direction so that it can be switched (connected).
- the head unit 62E includes a plurality of (here, four) Y heads 67 1 to 67 4 .
- the three Y heads 67 1 to 67 3 are arranged on the reference axis LA at substantially the same interval as the interval WD on the ⁇ X side of the secondary alignment system AL2 1 .
- Y head 67 4, from the reference axis LA in the + Y direction are disposed on the + Y side of secondary alignment system AL2 1 a predetermined distance away.
- the distance in the X-axis direction between the Y heads 67 3 and 67 4 is also set to WD.
- the head unit 62F includes a plurality (here, four) of Y heads 68 1 to 68 4 .
- These Y heads 68 1 to 68 4 are arranged at positions symmetrical to the Y heads 67 4 to 67 1 with respect to the reference axis LV. That is, the three Y heads 68 2 to 68 4 are arranged on the reference axis LA on the + X side of the secondary alignment system AL2 4 at substantially the same interval as the interval WD.
- the Y head 68 1 is disposed on the + Y side of the secondary alignment system AL2 4 that is a predetermined distance away from the reference axis LA in the + Y direction.
- the distance between the Y heads 68 1 and 68 2 in the X-axis direction is also set to WD.
- the Y heads 67 4 to 67 1 and the Y heads 68 1 to 68 4 are also referred to as a Y head 67 and a Y head 68, respectively, as necessary.
- the Y position (and ⁇ z rotation) of wafer stage WST is measured by Y heads 67 and 68 (that is, Y linear encoders 70E and 70F constituted by Y heads 67 and 68).
- Y head 67 3 adjacent in the X-axis direction of secondary alignment systems AL2 1, AL2 4, 68 2 are a pair of reference gratings of FD bar 46
- the Y position of the FD bar 46 is measured at the position of each reference grating 52 by the Y heads 67 3 and 68 2 that face each other and the pair of reference gratings 52.
- encoders configured by Y heads 67 3 and 68 2 respectively facing the pair of reference gratings 52 are referred to as Y linear encoders 70E 2 and 70F 2 (see FIG. 7).
- Y encoders composed of Y heads 67 and 68 facing Y scales 39Y 2 and 39Y 1 are referred to as Y encoders 70E 1 and 70F 1 .
- the measurement values of the linear encoders 70A to 70F described above are supplied to the main controller 20, and the main controller 20 includes three of the linear encoders 70A to 70D, or the linear encoders 70E 1 , 70F 1 , 70B and 70D. Based on the three measured values, the position of wafer stage WST in the XY plane is controlled, and based on the measured values of linear encoders 70E 2 and 70F 2 , the FD bar 46 (wafer stage WST) in the ⁇ z direction is controlled. Control the rotation.
- each encoder head (Y head, X head), the interference type encoder head currently disclosed by the international publication 2007/097379 pamphlet can be used, for example.
- this type of encoder head two measurement lights are irradiated onto the corresponding scales, the respective return lights are combined into one interference light, and the intensity of the interference light is measured using a photodetector. Based on the intensity change of the interference light, the displacement in the measurement direction of the scale (period direction of the diffraction grating) is measured.
- Each encoder head (Y head, X head) is not limited to the diffraction interference method described above, and various methods such as a so-called pickup method can be used.
- interferometer system 118 irradiates reflecting surface 17a or 17b with an interferometer beam (length measuring beam), receives the reflected light, and positions wafer stage WST in the XY plane.
- a Y interferometer 16 that measures information and three X interferometers 126, 127, and 128 are provided. More specifically, the Y interferometer 16 reflects at least three length measuring beams parallel to the Y axis including a pair of length measuring beams B4 1 and B4 2 symmetric with respect to the reference axis LV, and a movable mirror 41 described later. Irradiate. Further, as shown in FIG.
- the X interferometer 126 includes a pair of length measuring beams B5 1 and B5 that are symmetrical with respect to a straight line (reference axis LH) parallel to the X axis orthogonal to the optical axis AX and the reference axis LV.
- the reflection surface 17b is irradiated with at least three measurement beams including 2 in parallel with the X axis.
- the X interferometer 127 includes at least two Y axes including a length measuring beam B6 with a straight line (reference axis) LA parallel to the X axis orthogonal to the reference axis LV at the detection center of the alignment system AL1 as a length measuring axis. Is irradiated onto the reflecting surface 17b. Further, the X interferometer 128 irradiates the reflection surface 17b with a measurement beam B7 parallel to the Y axis.
- the position information from each interferometer of the interferometer system 118 is supplied to the main controller 20.
- main controller 20 adds rotation information (that is, pitching) in the ⁇ x direction in addition to the X and Y positions of wafer table WTB (wafer stage WST).
- ⁇ y direction rotation information that is, rolling
- ⁇ z direction rotation information that is, yawing
- the interferometer system 118 further includes a pair of Z interferometers 43A and 43B, as shown in FIGS.
- the Z interferometers 43A and 43B are arranged to face the movable mirror 41 having a concave reflecting surface fixed to the side surface on the ⁇ Y side of the stage body 91.
- the movable mirror 41 is designed such that the length in the X-axis direction is longer than the reflecting surface 17a of the wafer table WTB.
- the Z interferometers 43A and 43B irradiate the measuring mirrors B1 and B2 parallel to the two Y axes, respectively, onto the fixed mirrors 47A and 47B fixed to the main frame, for example, via the movable mirror 41, respectively.
- the reflected light is received and the optical path lengths of the measurement beams B1 and B2 are measured.
- main controller 20 calculates the position of wafer stage WST in the four degrees of freedom (Y, Z, ⁇ y, ⁇ z) direction.
- a multipoint focal position detection system (hereinafter referred to as “multipoint AF system”) including an irradiation system 90a and a light receiving system 90b. ) Is provided.
- the multipoint AF system an oblique incidence system having the same configuration as that disclosed in, for example, US Pat. No. 5,448,332 is adopted.
- the irradiation system 90a is disposed on the + Y side of the ⁇ X end of the head unit 62E described above, and light is received on the + Y side of the + X end of the head unit 62F while facing this.
- a system 90b is arranged.
- the multipoint AF system (90a, 90b) is fixed to the lower surface of the main frame.
- M is the total number of detection points
- a plurality of detection points irradiated with the detection beam are not shown individually, but as elongated detection areas (beam areas) AF extending in the X-axis direction between the irradiation system 90a and the light receiving system 90b. It is shown.
- the detection area AF is set to have a length in the X-axis direction that is approximately the same as the diameter of the wafer W, the wafer W is scanned almost in the Y-axis direction once in the Z-axis direction.
- Position information (surface position information) can be measured.
- each pair of pairs constituting a part of the surface position measurement system 180 is arranged in the vicinity of both ends of the detection area AF of the multipoint AF system (90a, 90b) in a symmetrical arrangement with respect to the reference axis LV.
- Heads for Z position measurement (hereinafter abbreviated as “Z head”) 72a, 72b, 72c, 72d are provided. These Z heads 72a to 72d are fixed to the lower surface of the main frame described above.
- the Z heads 72a to 72d are collectively referred to as the Z head 72.
- Z heads 72a to 72d for example, an optical displacement sensor head similar to an optical pickup used in a CD drive device or the like is used.
- Z heads 72a to 72d irradiate wafer table WTB with a measurement beam from above, receive the reflected light, and measure the surface position of wafer table WTB at the irradiation point.
- a configuration is adopted in which the measurement beam of the Z head is reflected by the reflection type diffraction grating constituting the Y scales 39Y 1 and 39Y 2 described above.
- the three outer Z heads 76 3 to 76 5 and 74 1 to 74 3 belonging to the head units 62A and 62C are arranged in parallel to the reference axis LH at a predetermined distance in the + Y direction from the reference axis LH. Has been.
- Z heads 76 1 and 74 5 innermost belonging to the respective head units 62A and 62C to + Y side of projection unit PU, the remaining Z head 76 2 and 74 4 each Y heads 65 2 and 64 4 - Arranged on the Y side.
- the five Z heads 76 and 74 belonging to the head units 62A and 62C are arranged symmetrically with respect to the reference axis LV.
- a head of an optical displacement sensor similar to the Z heads 72a to 72d described above is employed.
- the head unit 62A, 62C are the same X positions as the five Y heads 65 j, 64 i, each comprise, since with five Z heads 76 j, 74 i, respectively, such as during exposure Similarly to the Y heads 65 and 64, at least one of the five Z heads 76 and 74 always faces the corresponding Y scale 39Y 1 and 39Y 2 .
- the Z heads 72a to 72d, 74 1 to 74 5 , and 76 1 to 76 5 described above are connected to the main controller 20 via the signal processing / selecting device 170 as shown in FIG.
- the device 20 selects an arbitrary Z head from among the Z heads 72a to 72d, 74 1 to 74 5 , and 76 1 to 76 5 via the signal processing / selection device 170, and sets the operating state. Surface position information detected by the Z head is received via the signal processing / selection device 170.
- FIG. 7 shows the main configuration of the control system of the exposure apparatus 100.
- This control system is mainly configured of a main control device 20 composed of a microcomputer (or a workstation) for overall control of the entire apparatus.
- processing using wafer stage WST is performed according to a procedure similar to the procedure disclosed in the embodiment of International Publication No. 2007/097379. It is executed by the main controller 20.
- wafer stage WST when wafer stage WST is at unloading position UP shown in FIG. 8, when wafer W is unloaded and moved to loading position LP shown in FIG. 9, a new wafer W is placed on wafer table WTB. To be loaded. In the vicinity of the unloading position UP and loading position LP, the position of wafer stage WST with six degrees of freedom is controlled based on the measurement value of interferometer system 118. Further, in the unloading position UP, the loading position LP, and the movement path between them, all the encoder heads and the Z head do not face any of the scales 39Y 1 , 39Y 2 , 39X 1 , 39X 2 . That is, in the unloading position UP, loading position LP, and the area of the movement path between them, the measurement beam irradiation points of all encoder heads and Z heads are located outside the scale.
- a sequence in which the measurement beam of the encoder head and the Z head is not irradiated on the same point of the scale for a predetermined time or longer (that is, the thermal stress does not exceed the allowable value) is adopted.
- a method of retracting wafer stage WST to the “standby position” is employed. Therefore, when it is necessary to stop wafer stage WST for a predetermined time or longer, unloading position UP, loading position LP, etc. are suitable positions as standby positions.
- the first stage of baseline check of the primary alignment system AL1 is performed in which the wafer stage WST is moved and the reference mark FM of the measurement plate 30 is detected by the primary alignment system AL1.
- the origin of the encoder system and interferometer system is reset (reset).
- the alignment marks of a plurality of sample shot areas on the wafer W are measured using the alignment systems AL1, AL2 1 to AL2 4 while measuring the position of the wafer stage WST in the direction of 6 degrees of freedom using the encoder system and the Z head.
- the multipoint AF system (90a, 90b) is used to perform focus mapping (the surface position (Z position) of the wafer W with reference to the measured values of the Z heads 72a to 72d).
- Information measurement is performed.
- the measurement plate 30 reaches directly below the projection optical system PL during the movement of the wafer stage WST for alignment measurement and focus mapping in the + Y direction
- the reticle R is used by using the aerial image measuring devices 45A and 45B.
- the latter half of the baseline check of the primary alignment system AL1 is performed to measure the upper pair of alignment marks by the slit scan method.
- the wafer W is obtained in a step-and-scan manner based on the position information of each shot area on the wafer obtained from the alignment measurement result and the latest alignment system baseline. A plurality of upper shot areas are exposed, and a reticle pattern is transferred. During the exposure operation, focus leveling control of the wafer W is performed based on information obtained by focus mapping. The Z and ⁇ y of the wafer being exposed are controlled based on the measured values of the Z heads 74 and 76, while ⁇ x is controlled based on the measured values of the Y interferometer 16.
- the baseline measurement of the secondary alignment systems AL2 1 to AL2 4 is performed at an appropriate timing to the measurement values of the encoders 70E 2 and 70F 2 described above, as in the method disclosed in the pamphlet of International Publication No. 2007/097379.
- the four secondary alignment systems AL2 1 to AL2 4 are used and the reference on the FD bar 46 in the field of view of each secondary alignment system. This is done by measuring the mark M simultaneously.
- a series of processes using wafer stage WST is performed. For some reason, a series of processes using wafer stage WST is temporarily stopped, and wafer stage WST is in a standby state (idle state). ) May have to happen.
- the main controller 20 sets the wafer stage WST to the standby state described above. It is possible to stop at a loading position LP, which is one of the positions, and wait.
- main controller 20 causes wafer stage WST to be moved.
- main controller 20 may move wafer stage WST to the standby position instead of continuing to move it.
- main controller 20 controls the irradiation amount of the measurement beam to each scale by continuing to move wafer stage WST or retracting it to the standby position as described above. This avoids the distortion (deformation) of the scale due to the irradiation heat of the measurement beam and the accompanying measurement errors of the encoder head and Z head.
- main controller 20 may move wafer stage WST in steps, not limited to continuous movement. In this specification, the term “keep moving” is used as a concept including such step movement.
- main controller 20 reciprocates wafer stage WST within a predetermined range, as indicated by a white double arrow in FIG.
- main controller 20 distorts the scale of wafer stage WST in terms of the driving range (reciprocating movement distance) and driving speed according to the amount of heat generated and the amount of diffusion generated by the measurement beam irradiation.
- the amount of irradiation of the measurement beam is determined so as not to accumulate as much thermal stress as possible.
- FIG. 10 illustrates the case where the reciprocating drive direction of wafer stage WST is the X-axis direction, the reciprocating drive direction of wafer stage WST can be arbitrarily set.
- main controller 20 may reciprocate wafer stage WST along a zigzag orbit within a predetermined range, for example, as indicated by a white double arrow in FIG. As shown by a white arrow in FIG. 12, it is good also as turning around a stop position within a predetermined range, and it is good also as a predetermined range as shown by a white arrow in FIG. It is good also as driving around.
- the main controller 20 may combine these driving methods. In these cases as well, main controller 20 can only distort the scale of wafer stage WST in accordance with the amount of heat generated and the amount of diffusion generated by the irradiation of the measurement beam.
- the driving range, driving path, and driving speed of wafer stage WST may be arbitrarily set as long as heat sufficient to distort the scale at a level that cannot be ignored is not accumulated.
- the operator may be able to set the drive range, drive path, and drive speed of wafer stage WST described above.
- the method of continuing to move wafer stage WST is a means for suppressing the irradiation amount of the measurement beam to the same position on the scale. Therefore, it is applied only when the exposure apparatus 100 is idle for a short time, and is used for a long time. It is desirable to retract wafer stage WST to the aforementioned standby position.
- the encoder head and the Z head that face the corresponding scale described above there are several heads that face the upper surface of wafer table WTB (wafer W or its peripheral portion). There is.
- main controller 20 may stop the irradiation of the measurement beam from the head that does not face the corresponding scale, or perform the intermittent irradiation by using a method for controlling the irradiation of the measurement beam.
- the measurement beam may be irradiated with the intensity reduced from the head.
- the measurement accuracy of the encoder system 150 (and the surface position sensor system 180) is guaranteed.
- the exposure apparatus 100 of the present embodiment is provided with the encoder heads 64 to 68 and the Z heads 72, 74, and 76 for measuring the position of the wafer stage WST. Measurement beams emitted from these heads are applied to scales 39X 1 , 39X 2 , 39Y 1 , 39Y 2 provided on the upper surface of wafer stage WST. Therefore, main controller 20 drives wafer stage WST using stage drive system 124 to thereby measure scales 39X 1 , 39X 2 , 39X 2 of measurement beams emitted from encoder heads 64-68 and Z heads 72, 74, 76. The irradiation amount on 39Y 1 and 39Y 2 is adjusted.
- the main controller 20 continues to move the wafer stage WST as described above, or the measurement beam does not hit the scales 39X 1 , 39X 2 , 39Y 1 , 39Y 2. Further, the wafer stage WST is retracted to avoid continuous irradiation of the measurement beam on the scales 39X 1 , 39X 2 , 39Y 1 , 39Y 2 . Therefore, the heat of irradiation applied to the scale is adjusted, and distortion of the scale due to stress (thermal stress) and / or thermal expansion generated by the heat can be suppressed. Therefore, it is possible to always maintain the high position measurement accuracy of the encoder heads 64 to 68 (and the Z heads 72, 74, 76) and to ensure the driving accuracy of the wafer stage WST.
- a. B In this embodiment, in order to adjust the irradiation amount of the measurement beam irradiated to the scale from the encoder head (and Z head), the following a. B. Such a method may be adopted.
- Main controller 20 determines the minimum speed of continuous movement of wafer stage WST so that the above thermal stress, scale deformation (and distortion), etc. do not exceed allowable values based on the intensity of the measurement beam of the encoder head. Alternatively, the longest stay time and / or step distance in step movement may be determined. Of course, main controller 20 may simply move wafer stage WST without considering the strength.
- main controller 20 may start the above-described sequence (stage movement, retraction to the standby position, etc.) by time management using a timer.
- main controller 20 does not perform time management, and may automatically start the sequence when it is known in advance in the exposure sequence, or only starts the sequence when an error occurs. But it ’s okay.
- c in this embodiment, in order to adjust the irradiation amount of the measurement beam irradiated to the scale from the encoder head (and Z head), the following c1. , C2 to reduce the intensity of the measurement beam, or block the measurement beam, or And b. You may perform in combination with at least one of these. c1.
- the light source of the encoder may be controlled, or a neutral density filter may be inserted in the light transmission system. c2.
- a shutter may be disposed in the vicinity of the light transmission system or the emission part of the head, or wafer stage WST may be moved to a predetermined position where a cover ( ⁇ ⁇ ) covering the scale is installed.
- the predetermined position may be a position where at least one measurement beam is irradiated on the scale.
- the cover may not cover the entire scale surface, and may only block the measurement beam for the head facing the scale.
- the measurement beams emitted mainly from the encoder head and the Z head are taken up as measurement beams that can distort the scale.
- the measurement beams of the alignment systems AL1, AL2 1 to AL2 4 and the multipoint AF system (90a, 90b) can also distort the scale. Therefore, in the above-described embodiment, it is desirable that the main controller 20 also adjusts the irradiation amount for the scale of these measurement beams, and suppresses distortion of the scale due to the stress generated by the heat. Also in this case, the a. B. Or c.
- the irradiation adjustment method (c1. And c2.) Is applicable.
- main controller 20 is configured to retract wafer stage WST to the standby position when an error occurs (ie, when a new wafer is not sent).
- the wafer stage WST may be evacuated or moved during a normal exposure sequence (for example, when an operation not using the wafer stage WST is performed or during that period) as well as during an error or the like. good.
- each measuring apparatus such as the encoder system described in the above embodiment is merely an example, and the present invention is not limited to this.
- one position of the wafer stage WST in the X-axis and Y-axis directions is measured by each head of the encoder system.
- a head that can measure one position in the direction and a position in the Z-axis direction may be used.
- the arrangement of the encoder head and the Z head described in the above embodiment is an example, and the arrangement of the head is not limited to this.
- the stage apparatus 50 includes the encoder system 150 (encoder head) and the surface position measurement system 180 (Z head), but may include only one of them.
- an encoder having a configuration in which a lattice portion (Y scale, X scale) is provided on a wafer table (wafer stage), and an X head and a Y head are arranged outside the wafer stage so as to be opposed to this.
- a lattice portion Y scale, X scale
- a wafer stage wafer table
- an X head and a Y head are arranged outside the wafer stage so as to be opposed to this.
- the Z head may also be provided on the wafer stage, and the surface of the lattice portion may be a reflective surface to which the measurement beam of the Z head is irradiated.
- the encoder head may be a head capable of measuring one position in the X-axis and Y-axis directions and a position in the Z-axis direction.
- the wafer stage may be stopped at a position where at least one head faces a lattice part (ceiling scale) outside the wafer stage. Even if the wafer stage is moved within the moving range of the exposure sequence, the measurement beam from the head is not irradiated even if the wafer stage is moved. Is determined. Further, a part of the ceiling scale is an area used in the exposure sequence, and it is preferable that the ceiling scale is separated from the use area to such an extent that thermal stress and deformation do not affect the use area of the ceiling scale.
- the present invention is not limited to this, and the present invention is applied to a stationary exposure apparatus such as a stepper. May be. Even in the case of a stepper or the like, the same effect can be obtained because the position of the stage on which the object to be exposed is mounted can be measured using the encoder as in the above embodiment.
- the present invention can also be applied to a step-and-stitch reduction projection exposure apparatus, a proximity exposure apparatus, or a mirror projection aligner that synthesizes a shot area and a shot area. Further, as disclosed in, for example, US Pat. No. 6,590,634, US Pat. No. 5,969,441, US Pat. No. 6,208,407, etc.
- the present invention can also be applied to a multi-stage type exposure apparatus provided with a stage.
- the exposure station includes the above embodiment and its variations. It can be applied at the measurement station as well.
- the said implementation A form and its modification are applicable.
- an alignment system and an AF system are arranged, and are effective as countermeasures as described above.
- measurement members for example, fiducial marks, and / or The present invention can also be applied to an exposure apparatus having a measurement stage including a sensor). Even when the scale or head of the encoder system is provided on the measurement stage, it is preferable to perform various controls including irradiation adjustment similar to those in the above-described embodiment and its modifications.
- the projection optical system in the exposure apparatus of the above embodiment may be not only a reduction system but also an equal magnification and an enlargement system
- the projection optical system PL may be not only a refraction system but also a reflection system or a catadioptric system.
- the projected image may be either an inverted image or an erect image.
- the illumination area and the exposure area described above are rectangular in shape, but the shape is not limited to this, and may be, for example, an arc, a trapezoid, or a parallelogram.
- the light source of the exposure apparatus of the above embodiment is not limited to the ArF excimer laser, but is a KrF excimer laser (output wavelength 248 nm), F 2 laser (output wavelength 157 nm), Ar 2 laser (output wavelength 126 nm), Kr 2 laser ( It is also possible to use a pulse laser light source with an output wavelength of 146 nm, an ultrahigh pressure mercury lamp that emits a bright line such as g-line (wavelength 436 nm), i-line (wavelength 365 nm), and the like. A harmonic generator of a YAG laser or the like can also be used. In addition, as disclosed in, for example, US Pat. No.
- a single wavelength laser beam in an infrared region or a visible region oscillated from a DFB semiconductor laser or a fiber laser is used as vacuum ultraviolet light.
- a harmonic that is amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.
- the illumination light IL of the exposure apparatus is not limited to light having a wavelength of 100 nm or more, and light having a wavelength of less than 100 nm may be used.
- EUV Extreme Ultraviolet
- a soft X-ray region for example, a wavelength region of 5 to 15 nm
- the exposure wavelength Development of an EUV exposure apparatus using an all-reflection reduction optical system designed under (for example, 13.5 nm) and a reflective mask is underway.
- the present invention can also be suitably applied to such an apparatus.
- the present invention can be applied to an exposure apparatus using a charged particle beam such as an electron beam or an ion beam.
- a light transmission type mask in which a predetermined light shielding pattern (or phase pattern / dimming pattern) is formed on a light transmission substrate is used.
- a predetermined light shielding pattern or phase pattern / dimming pattern
- an electronic mask variable shaping mask, which forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed, as disclosed in US Pat. No. 6,778,257.
- an active mask or an image generator for example, a DMD (Digital Micro-mirror Device) which is a kind of non-light emitting image display element (spatial light modulator) may be used.
- DMD Digital Micro-mirror Device
- the present invention can also be applied to an exposure apparatus (lithography system) that forms line and space patterns on a wafer by forming interference fringes on the wafer, for example.
- an exposure apparatus lithography system
- two reticle patterns are synthesized on a wafer via a projection optical system, and one scan exposure is performed on one wafer.
- the present invention can also be applied to an exposure apparatus that performs double exposure of shot areas almost simultaneously.
- the apparatus for forming a pattern on an object is not limited to the exposure apparatus (lithography system) described above, and the present invention can be applied to an apparatus for forming a pattern on an object by, for example, an ink jet method.
- the object on which the pattern is to be formed in the above embodiment is not limited to the wafer, but other objects such as a glass plate, a ceramic substrate, a film member, or a mask blank. But it ’s okay.
- the use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing.
- an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern onto a square glass plate, an organic EL, a thin film magnetic head, an image sensor ( CCDs, etc.), micromachines, DNA chips and the like can also be widely applied to exposure apparatuses.
- CCDs, etc. image sensor
- micromachines DNA chips and the like
- the present invention can also be applied to an exposure apparatus that transfers a circuit pattern.
- An electronic device such as a semiconductor element includes a step of designing a function / performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and the exposure apparatus (pattern forming apparatus) of the above-described embodiment. ),
- a lithography step for transferring the reticle pattern to the wafer, a development step for developing the exposed wafer, an etching step for removing the exposed member other than the portion where the resist remains by etching, and etching is unnecessary. It is manufactured through a resist removal step for removing the resist, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like.
- the exposure method described above is executed using the exposure apparatus of the above embodiment, and a device pattern is formed on the wafer. Therefore, a highly integrated device can be manufactured with high productivity.
- the moving body driving method and the moving body driving apparatus of the present invention are suitable for driving a moving body.
- the exposure method and exposure apparatus of the present invention are suitable for forming a pattern on an object by irradiating an energy beam.
- the pattern forming method and pattern forming apparatus of the present invention are suitable for forming a pattern on an object.
- the device manufacturing method of the present invention is suitable for manufacturing an electronic device such as a semiconductor element or a liquid crystal display element.
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Abstract
Description
a.主制御装置20は、エンコーダヘッドの計測ビームの強度から、上記の熱応力、スケールの変形量(及び歪み)などが許容値を越えないように、ウエハステージWSTの、連続移動での最低速度など、又はステップ移動での最長滞在時間及び/又はステップ距離を決定しても良い。勿論、主制御装置20は、強度を考慮することなく、単純にウエハステージWSTを移動させることとしても良い。
b.また、主制御装置20は、タイマーによる時間管理で上記シーケンス(ステージ移動、待機位置への退避など)を開始しても良い。あるいは、主制御装置20は、時間管理を行わず、露光シーケンス上、予め分かっている場合には上記シーケンスを自動的に開始しても良いし、エラーが発生した場合に上記シーケンスを開始するだけでも良い。
c.また、本実施形態において、エンコーダヘッド(及びZヘッド)からスケールに照射される計測ビームの照射量を調整するため、以下のc1.、c2のような手法により、計測ビームの強度を落とす、あるいは計測ビームを遮る、あるいはこれらを上記a.及びb.の少なくとも一方と組み合わせて実行しても良い。
c1. 計測ビームの強度を落とすため、例えば、エンコーダの光源を制御しても良いし、送光系に減光フィルタを挿入しても良い。
c2. また、計測ビームを遮るため、送光系あるいはヘッドの射出部近傍にシャッタを配置しても良いし、スケールを覆うカバー(庇)が設置された所定位置にウエハステージWSTを移動させても良い。後者では、その所定位置が、少なくとも1つの計測ビームがスケールに照射される位置でも良い。また、カバーは、スケール全面を覆わなくても良く、スケールと対向するヘッドのみに対してその計測ビームを遮るだけでも良い。
Claims (40)
- 所定平面内で移動体を駆動する移動体駆動方法であって、
前記移動体と該移動体の外部との一方に設置された計測面に、計測ビームを照射する前記移動体と該移動体の外部との他方に設置されたヘッドを備える位置計測系を用いて、前記移動体の位置を計測し、その計測結果に基づいて前記移動体を駆動する工程と;
前記計測ビームの前記計測面上への照射量を調整する工程と;
を含む移動体駆動方法。 - 請求項1に記載の移動体駆動方法において、
前記調整する工程では、前記移動体を駆動して、前記計測ビームの前記計測面上への照射量を調整する移動体駆動方法。 - 請求項2に記載の移動体駆動方法において、
前記調整する工程では、前記移動体を、所定の範囲内で動かし続ける移動体駆動方法。 - 請求項2又は3に記載の移動体駆動方法において、
前記調整する工程では、前記移動体を、前記計測面によって吸収される前記計測ビームの量が一定量を超えない速度で駆動する移動体駆動方法。 - 請求項4に記載の移動体駆動方法において、
前記一定量は、前記計測ビームを吸収することによって発生する前記計測面での熱応力及び変形量の少なくとも一方から定められる移動体駆動方法。 - 請求項1~5のいずれか一項に記載の移動体駆動方法において、
前記調整する工程では、前記移動体を、前記計測ビームの照射点が前記計測面外に位置する領域に退避させる移動体駆動方法。 - 請求項1~6のいずれか一項に記載の移動体駆動方法において、
前記調整する工程では、前記計測面に対向するヘッドから前記計測ビームを間欠照射する移動体駆動方法。 - 請求項1~6のいずれか一項に記載の移動体駆動方法において、
前記調整する工程では、前記計測面に対向するヘッドから強度を落として前記計測ビームを照射する移動体駆動方法。 - エネルギビームを照射することによって物体上の区画領域にパターンを形成する露光方法であって、
前記区画領域にパターンを形成するために、請求項1~8のいずれか一項に記載の移動体駆動方法を用いて、前記物体を保持する移動体を駆動する工程を含む露光方法。 - 物体上にパターンを形成するパターン形成方法であって、
前記物体上にパターンを形成するために、請求項1~8のいずれか一項に記載の移動体駆動方法を用いて、前記物体を保持する移動体を駆動する工程を含むパターン形成方法。 - 請求項10に記載のパターン形成方法において、
前記物体は感応層を有し、
前記感応層にエネルギビームを照射することによって、前記パターンを形成するパターン形成方法。 - 請求項10又は11に記載のパターン形成方法を用いて、物体上にパターンを形成する工程と;
前記パターンが形成された前記物体に処理を施す工程と;
を含むデバイス製造方法。 - エネルギビームで物体を露光する露光方法であって、
前記物体を保持して所定平面内で移動可能な移動体とその外部との一方に計測面が設置されかつ他方にヘッドが設置される位置計測系を用いて、前記移動体の位置情報を計測し、その位置情報に基づいて前記移動体を駆動することと;
前記計測ビームによって、前記計測面での熱応力、変形量の少なくとも1つを含む物理量が許容値を越えるのを阻止することと;を含む露光方法。 - 請求項13に記載の露光方法において、
前記計測面は、前記所定平面と実質的に平行でかつ回折格子を有する露光方法。 - 請求項13又は14に記載の露光方法において、
前記阻止のため、前記移動体を前記所定平面内で駆動する露光方法。 - 請求項13~15のいずれか一項に記載の露光方法において、
前記阻止のため、前記計測面を前記計測ビームの照射位置から外す露光方法。 - 請求項13~16のいずれか一項に記載の露光方法において、
前記阻止のため、前記計測ビームの光路に遮光部材を配置する、あるいは前記計測ビームの強度を低下させる露光方法。 - 請求項13~17のいずれか一項に記載の露光方法において、
前記阻止は、前記物体の露光シーケンスの異常時、及び/又は前記移動体を使わない期間中に行われる露光方法。 - 請求項13~18のいずれか一項に記載の露光方法において、
前記位置計測系とは別の計測装置によって前記物体の位置情報を計測することと;
前記計測装置のビームによって前記物理量が許容値を越えるのを阻止することと;を含む露光方法。 - 請求項13~19のいずれか一項に記載の露光方法を用いて物体を露光することと;
露光された前記物体を現像することと;
を含むデバイス製造方法。 - 所定平面内で移動体を駆動する移動体駆動装置であって、
前記移動体上と該移動体外部の一方に設置された計測面に、計測ビームを照射する前記移動体上と該移動体外部の他方に設置されたヘッドを用いて、前記移動体の位置を計測する位置計測系と;
前記移動体を、前記位置計測系の計測結果に基づいて、前記所定平面内で駆動する駆動装置と;
前記駆動装置を用いて前記移動体を駆動することによって、前記計測ビームの前記計測面上への照射量を調整する調整装置と;
を備える移動体駆動装置。 - 請求項21に記載の移動体駆動装置において、
前記調整装置は、前記移動体を、所定の範囲内で動かし続ける移動体駆動装置。 - 請求項21又は22に記載の移動体駆動装置において、
前記調整装置は、前記移動体を、前記計測面によって吸収される前記計測ビームの量が一定量を超えない速度で駆動する移動体駆動装置。 - 請求項23に記載の移動体駆動装置において、
前記一定量は、前記計測ビームを吸収することによって発生する前記計測面での熱応力及び変形量の少なくとも一方からから定められる移動体駆動装置。 - 請求項21~24のいずれか一項に記載の移動体駆動装置において、
前記調整装置は、前記移動体を、前記計測ビームの照射点が前記計測面外に位置する領域に退避させる移動体駆動装置。 - 請求項21~25のいずれか一項に記載の移動体駆動装置において、
前記計測面には、前記所定平面内の第1軸と平行な方向を周期方向とする回折格子が形成され、
前記位置計測系は、前記計測面と該計測面に計測ビームを照射する前記ヘッドとの前記第1軸に平行な方向に関する相対位置を計測するエンコーダシステムを含む移動体駆動装置。 - 請求項26に記載の移動体駆動装置において、
前記計測面には、さらに、前記所定平面内で前記第1軸と直交する第2軸に平行な方向を周期方向とする別の回折格子が形成され、
前記エンコーダシステムは、さらに、前記計測面と前記ヘッドとの前記第2軸に平行な方向に関する相対位置を計測する移動体駆動装置。 - 請求項21~27のいずれか一項に記載の移動体駆動装置において、
前記位置計測系は、前記計測ビームの照射点における、前記所定平面と直交する方向に関する前記計測面の位置を計測する面位置計測システムを含む移動体駆動装置。 - 請求項21~28のいずれか一項に記載の移動体駆動装置において、
前記位置計測系は、前記ヘッドを用いて前記計測面上のマークを検出するマーク検出系を含む移動体駆動装置。 - エネルギビームを照射することによって物体上の区画領域にパターンを形成する露光装置であって、
前記区画領域にパターンを形成するために、前記物体を保持する移動体を所定平面内で駆動する、請求項21~29のいずれか一項に記載の移動体駆動装置を備える露光装置。 - 物体にパターンを形成するパターン形成装置であって、
前記物体を保持して移動可能な移動体と;
前記物体上にパターンを形成するパターン生成装置と;
前記移動体を所定平面内で駆動する、請求項21~29のいずれか一項に記載の移動体駆動装置と;
を備えるパターン形成装置。 - 請求項31に記載のパターン形成装置において、
前記物体は感応層を有し、
前記パターン生成装置は、前記感応層にエネルギビームを照射することによって、前記パターンを形成するパターン形成装置。 - エネルギビームで物体を露光する露光装置であって、
前記物体を保持して所定平面内で移動可能な移動体と;
前記移動体及び該移動体の外部との他方に設置されたヘッドを有し、該ヘッドから前記移動体及び該移動体の外部との一方に設置された計測面に計測ビームを照射し、その反射光を受光して前記移動体の位置情報を計測する位置計測系と;
前記位置情報に基づいて前記移動体を駆動する駆動系と;
前記計測ビームによって、前記計測面での熱応力、変形量の少なくとも1つを含む物理量が許容値を越えるのを阻止する制御装置と;を備える露光装置。 - 請求項33に記載の露光装置において、
前記計測面は、前記所定平面と実質的に平行でかつ回折格子を有する露光装置。 - 請求項33又は34に記載の露光装置において、
前記制御装置は、前記阻止のため、前記駆動系を介して前記移動体を前記所定平面内で駆動する露光装置。 - 請求項33~35のいずれか一項に記載の露光装置において、
前記制御装置は、前記阻止のため、前記計測面を前記計測ビームの照射位置から外す露光装置。 - 請求項33~36のいずれか一項に記載の露光装置において、
前記制御装置は、前記阻止のため、前記計測ビームの光路に遮光部材を配置する、あるいは前記計測ビームの強度を低下させる露光装置。 - 請求項33~37のいずれか一項に記載の露光装置において、
前記制御装置は、前記阻止を、前記物体の露光シーケンスの異常時、及び/又は前記移動体を使わない期間中に行う露光装置。 - 請求項13~38のいずれか一項に記載の露光装置において、
前記物体の位置情報を計測する前記位置計測系とは別の計測装置をさらに備え、
前記制御装置は、前記計測装置のビームによって前記物理量が許容値を越えるのを阻止する露光装置。 - 請求項33~39のいずれか一項に記載の露光装置を用いて物体を露光することと;
露光された前記物体を現像することと;
を含むデバイス製造方法。
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2008
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- 2008-12-25 WO PCT/JP2008/003960 patent/WO2009084203A1/ja active Application Filing
- 2008-12-25 CN CN2008800196325A patent/CN101681810B/zh not_active Expired - Fee Related
- 2008-12-25 JP JP2009547898A patent/JP5791230B2/ja not_active Expired - Fee Related
- 2008-12-25 KR KR1020097025766A patent/KR101536014B1/ko active IP Right Grant
- 2008-12-26 TW TW097150794A patent/TWI506671B/zh not_active IP Right Cessation
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2010
- 2010-05-12 HK HK10104627.1A patent/HK1136912A1/xx not_active IP Right Cessation
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2013
- 2013-07-30 JP JP2013157527A patent/JP5686303B2/ja not_active Expired - Fee Related
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2014
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KR20150023781A (ko) * | 2009-08-25 | 2015-03-05 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
KR101596206B1 (ko) | 2009-08-25 | 2016-02-19 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
JP2011061199A (ja) * | 2009-09-11 | 2011-03-24 | Asml Netherlands Bv | シャッター部材、リソグラフィ装置及びデバイス製造方法 |
US8599356B2 (en) | 2009-09-11 | 2013-12-03 | Asml Netherlands B.V. | Shutter member, a lithographic apparatus and device manufacturing method |
JP2021015302A (ja) * | 2015-09-30 | 2021-02-12 | 株式会社ニコン | 露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法 |
JP7060059B2 (ja) | 2015-09-30 | 2022-04-26 | 株式会社ニコン | 露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5686303B2 (ja) | 2015-03-18 |
TW200943383A (en) | 2009-10-16 |
KR101536014B1 (ko) | 2015-07-10 |
KR20100103342A (ko) | 2010-09-27 |
TWI506671B (zh) | 2015-11-01 |
CN101681810B (zh) | 2012-06-06 |
JP2014140071A (ja) | 2014-07-31 |
US20090190104A1 (en) | 2009-07-30 |
CN101681810A (zh) | 2010-03-24 |
JP5780495B2 (ja) | 2015-09-16 |
US8269945B2 (en) | 2012-09-18 |
JP2013251567A (ja) | 2013-12-12 |
JPWO2009084203A1 (ja) | 2011-05-12 |
JP5791230B2 (ja) | 2015-10-07 |
HK1136912A1 (en) | 2010-07-09 |
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