WO2009078264A1 - 反射型発光ダイオード - Google Patents

反射型発光ダイオード Download PDF

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Publication number
WO2009078264A1
WO2009078264A1 PCT/JP2008/071668 JP2008071668W WO2009078264A1 WO 2009078264 A1 WO2009078264 A1 WO 2009078264A1 JP 2008071668 W JP2008071668 W JP 2008071668W WO 2009078264 A1 WO2009078264 A1 WO 2009078264A1
Authority
WO
WIPO (PCT)
Prior art keywords
upper sections
light
emitting diode
output power
reflective light
Prior art date
Application number
PCT/JP2008/071668
Other languages
English (en)
French (fr)
Inventor
Yoshio Inokoshi
Kaoru Kumagai
Original Assignee
Pearl Lighting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pearl Lighting Co., Ltd. filed Critical Pearl Lighting Co., Ltd.
Publication of WO2009078264A1 publication Critical patent/WO2009078264A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

　本発明は、高出力で製造歩留まりも良くできる反射型発光ダイオードを実現することを目的とし、素子マウント側リード７、ワイヤ接続側リード８それぞれの上片７ａ,８ａの側縁部分に側方に延出する翼片７ｄ,８ｄを形成することでリード７,８それぞれの曲げ加工の際にリードの上片７ａ,８ａの部分に応力が働いても位置ずれを起こしにくくして透明エポキシ樹脂もしくは透明シリコン樹脂のような硬化した透明樹脂１３を損傷させたり発光素子１０にダメージを与えたりすることがないようし、同時に翼片７ｄ,８ｄを形成することで上片７,８の表面積を広くして熱抵抗を低減させることで発光素子９に大電流が通電でき、高出力化が図れることを特徴とする。
PCT/JP2008/071668 2007-12-18 2008-11-28 反射型発光ダイオード WO2009078264A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007326136A JP2009152227A (ja) 2007-12-18 2007-12-18 反射型発光ダイオード
JP2007-326136 2007-12-18

Publications (1)

Publication Number Publication Date
WO2009078264A1 true WO2009078264A1 (ja) 2009-06-25

Family

ID=40795382

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071668 WO2009078264A1 (ja) 2007-12-18 2008-11-28 反射型発光ダイオード

Country Status (3)

Country Link
JP (1) JP2009152227A (ja)
TW (1) TW200945629A (ja)
WO (1) WO2009078264A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113906576A (zh) * 2019-06-04 2022-01-07 浜松光子学株式会社 发光装置和发光装置的制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4917187B1 (ja) * 2011-01-28 2012-04-18 パイオニア株式会社 発光モジュールの製造方法
CN103615709B (zh) * 2013-11-22 2016-01-13 深圳市九洲光电科技有限公司 一种大功率led散热结构

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54126490A (en) * 1978-03-06 1979-10-01 Amp Inc Light emission diode assembly and method of fabricating same
JPH04168777A (ja) * 1990-10-31 1992-06-16 Iwasaki Electric Co Ltd 発光ダイオード及び発光ダイオードアレイ
JPH08293626A (ja) * 1995-04-20 1996-11-05 Omron Corp 半導体装置
JP2004006438A (ja) * 2002-04-15 2004-01-08 Opto Device Kenkyusho:Kk 反射型発光ダイオード
WO2004093204A1 (ja) * 2003-04-16 2004-10-28 Tabuchi Electric Co., Ltd. 反射型発光ダイオード
WO2005091383A1 (ja) * 2004-03-24 2005-09-29 Renesas Yanai Semiconductor Inc. 発光装置の製造方法および発光装置
JP2006135123A (ja) * 2004-11-08 2006-05-25 Opto Device Kenkyusho:Kk 高出力反射型発光ダイオード及びその製造方法
JP2007184377A (ja) * 2006-01-05 2007-07-19 Opto Device Kenkyusho:Kk 高出力反射型発光ダイオード及び製造方法
JP2007311640A (ja) * 2006-05-19 2007-11-29 Harison Toshiba Lighting Corp 反射型発光ダイオード

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54126490A (en) * 1978-03-06 1979-10-01 Amp Inc Light emission diode assembly and method of fabricating same
JPH04168777A (ja) * 1990-10-31 1992-06-16 Iwasaki Electric Co Ltd 発光ダイオード及び発光ダイオードアレイ
JPH08293626A (ja) * 1995-04-20 1996-11-05 Omron Corp 半導体装置
JP2004006438A (ja) * 2002-04-15 2004-01-08 Opto Device Kenkyusho:Kk 反射型発光ダイオード
WO2004093204A1 (ja) * 2003-04-16 2004-10-28 Tabuchi Electric Co., Ltd. 反射型発光ダイオード
WO2005091383A1 (ja) * 2004-03-24 2005-09-29 Renesas Yanai Semiconductor Inc. 発光装置の製造方法および発光装置
JP2006135123A (ja) * 2004-11-08 2006-05-25 Opto Device Kenkyusho:Kk 高出力反射型発光ダイオード及びその製造方法
JP2007184377A (ja) * 2006-01-05 2007-07-19 Opto Device Kenkyusho:Kk 高出力反射型発光ダイオード及び製造方法
JP2007311640A (ja) * 2006-05-19 2007-11-29 Harison Toshiba Lighting Corp 反射型発光ダイオード

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113906576A (zh) * 2019-06-04 2022-01-07 浜松光子学株式会社 发光装置和发光装置的制造方法
CN113906576B (zh) * 2019-06-04 2024-01-30 浜松光子学株式会社 发光装置和发光装置的制造方法

Also Published As

Publication number Publication date
JP2009152227A (ja) 2009-07-09
TW200945629A (en) 2009-11-01

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