WO2009041318A1 - 発光素子及びそれを用いた発光装置 - Google Patents

発光素子及びそれを用いた発光装置 Download PDF

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Publication number
WO2009041318A1
WO2009041318A1 PCT/JP2008/066710 JP2008066710W WO2009041318A1 WO 2009041318 A1 WO2009041318 A1 WO 2009041318A1 JP 2008066710 W JP2008066710 W JP 2008066710W WO 2009041318 A1 WO2009041318 A1 WO 2009041318A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
electrode
emitting element
conductivity type
distance
Prior art date
Application number
PCT/JP2008/066710
Other languages
English (en)
French (fr)
Inventor
Hiroaki Matsumura
Original Assignee
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corporation filed Critical Nichia Corporation
Priority to KR1020107006111A priority Critical patent/KR101346538B1/ko
Priority to CN2008801088258A priority patent/CN102232249B/zh
Priority to US12/680,178 priority patent/US8217568B2/en
Priority to JP2009534290A priority patent/JP5333226B2/ja
Publication of WO2009041318A1 publication Critical patent/WO2009041318A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

【課題】局所電流密度を均一にし、放熱性に優れた構造であり、ひいては大電流域にあっても高効率の発光でありながら長寿命・高信頼性の発光素子及びそれを用いた発光装置を提供する。 【解決手段】半導体構造１０を構成する第１導電型層１１及び第２導電型層１２にそれぞれ電気的に接続され、互いに対向する第１電極２１及び第２電極２１と、を有する発光素子であって、第１電極２１は、光取り出し側に位置する第１導電型層１１上の電極形成面１５に形成された、互いに対向する一対の電極延伸部３０を備えており、一対の電極延伸部３０の対向方向において、該電極延伸部３０間の１／２の距離ｌ１が、電極延伸部３０から電極形成面１５の端縁までの距離Ｌ２よりも小さい。
PCT/JP2008/066710 2007-09-26 2008-09-17 発光素子及びそれを用いた発光装置 WO2009041318A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107006111A KR101346538B1 (ko) 2007-09-26 2008-09-17 발광소자 및 그것을 이용한 발광장치
CN2008801088258A CN102232249B (zh) 2007-09-26 2008-09-17 发光元件及使用其的发光装置
US12/680,178 US8217568B2 (en) 2007-09-26 2008-09-17 Light emitting element and light emitting device using the light emitting element
JP2009534290A JP5333226B2 (ja) 2007-09-26 2008-09-17 発光素子及びそれを用いた発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-249865 2007-09-26
JP2007249865 2007-09-26

Publications (1)

Publication Number Publication Date
WO2009041318A1 true WO2009041318A1 (ja) 2009-04-02

Family

ID=40511205

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066710 WO2009041318A1 (ja) 2007-09-26 2008-09-17 発光素子及びそれを用いた発光装置

Country Status (6)

Country Link
US (1) US8217568B2 (ja)
JP (1) JP5333226B2 (ja)
KR (1) KR101346538B1 (ja)
CN (1) CN102232249B (ja)
TW (1) TWI381553B (ja)
WO (1) WO2009041318A1 (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114240A (ja) * 2009-11-27 2011-06-09 Nichia Corp 半導体発光素子
JP2011258746A (ja) * 2010-06-09 2011-12-22 Nichia Chem Ind Ltd 半導体発光素子の製造方法
JP2012015154A (ja) * 2010-06-29 2012-01-19 Ngk Insulators Ltd 半導体発光素子および半導体発光素子の製造方法
JP2012033935A (ja) * 2010-07-28 2012-02-16 Semileds Optoelectronics Co Ltd 電極フレームを有する垂直型発光ダイオード（ｖｌｅｄ）ダイ、及び、その製造方法
JP2012044194A (ja) * 2011-09-15 2012-03-01 Toshiba Corp 半導体発光素子、ウェーハ、半導体発光素子の製造方法及びウェーハの製造方法
JP2012069934A (ja) * 2010-08-26 2012-04-05 Nichia Chem Ind Ltd 半導体発光素子
JP2012227311A (ja) * 2011-04-19 2012-11-15 Nichia Chem Ind Ltd 半導体発光素子
JP2014146848A (ja) * 2010-04-23 2014-08-14 Lg Innotek Co Ltd 発光素子
JP2015079953A (ja) * 2013-09-13 2015-04-23 日亜化学工業株式会社 発光素子
JP2015088523A (ja) * 2013-10-28 2015-05-07 株式会社東芝 半導体発光装置
JP2016018951A (ja) * 2014-07-10 2016-02-01 シャープ株式会社 半導体発光素子
JP2016096349A (ja) * 2010-04-15 2016-05-26 エルジー イノテック カンパニー リミテッド 発光素子、発光素子パッケージ
KR20170037565A (ko) * 2015-09-25 2017-04-04 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광장치
TWI841224B (zh) 2022-08-05 2024-05-01 南亞科技股份有限公司 具有複合互連結構的半導體元件結構及其製備方法

Families Citing this family (15)

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TWI389347B (zh) * 2008-11-13 2013-03-11 Epistar Corp 光電元件及其製作方法
JP5534763B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
KR100996446B1 (ko) * 2010-05-24 2010-11-25 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
CN102456825A (zh) * 2010-10-25 2012-05-16 展晶科技(深圳)有限公司 发光二极管及其制造方法
JP2012104739A (ja) * 2010-11-12 2012-05-31 Toshiba Corp 発光素子
JP5746553B2 (ja) * 2011-04-28 2015-07-08 株式会社東芝 基板加工システム、および基板加工プログラム
US9101316B2 (en) 2011-11-30 2015-08-11 General Electric Company Portable radiation detector and system
WO2014011419A1 (en) * 2012-07-10 2014-01-16 Toshiba Techno Center, Inc. Submount for led device package
US9583689B2 (en) * 2013-07-12 2017-02-28 Lite-On Opto Technology (Changzhou) Co., Ltd. LED package
US9434876B2 (en) * 2014-10-23 2016-09-06 Central Glass Company, Limited Phosphor-dispersed glass
JP6582738B2 (ja) * 2015-08-26 2019-10-02 日亜化学工業株式会社 発光素子及び発光装置
CN106784223B (zh) * 2016-12-22 2019-05-14 天津三安光电有限公司 发光二极管及其制作方法
US20190206752A1 (en) * 2017-12-29 2019-07-04 Texas Instruments Incorporated Integrated circuit packages with cavities and methods of manufacturing the same
JP7166818B2 (ja) * 2018-07-13 2022-11-08 スタンレー電気株式会社 光半導体素子
CN113299802B (zh) * 2021-05-06 2022-09-09 深圳市思坦科技有限公司 Led芯片结构的制备方法及制得的led芯片结构

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JPH07231116A (ja) * 1994-02-16 1995-08-29 Sumitomo Electric Ind Ltd サイドエミッティング型発光ダイオード
JP2004134549A (ja) * 2002-10-10 2004-04-30 Hitachi Cable Ltd 発光ダイオードアレイ
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JP2005123526A (ja) * 2003-10-20 2005-05-12 Oki Data Corp 半導体装置、ｌｅｄヘッド、及び画像形成装置
JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011114240A (ja) * 2009-11-27 2011-06-09 Nichia Corp 半導体発光素子
JP2016096349A (ja) * 2010-04-15 2016-05-26 エルジー イノテック カンパニー リミテッド 発光素子、発光素子パッケージ
JP2014146848A (ja) * 2010-04-23 2014-08-14 Lg Innotek Co Ltd 発光素子
JP2011258746A (ja) * 2010-06-09 2011-12-22 Nichia Chem Ind Ltd 半導体発光素子の製造方法
TWI570957B (zh) * 2010-06-09 2017-02-11 日亞化學工業股份有限公司 半導體發光元件之製造方法
US8786056B2 (en) 2010-06-09 2014-07-22 Nichia Corporation Semiconductor light emitting elements comprising a plating substrate with a projecting tab, or comprising an exposed seed layer
US9490388B2 (en) 2010-06-09 2016-11-08 Nichia Corporation Semiconductor light emitting element fabrication method
JP2012015154A (ja) * 2010-06-29 2012-01-19 Ngk Insulators Ltd 半導体発光素子および半導体発光素子の製造方法
JP2012033935A (ja) * 2010-07-28 2012-02-16 Semileds Optoelectronics Co Ltd 電極フレームを有する垂直型発光ダイオード（ｖｌｅｄ）ダイ、及び、その製造方法
JP2012069934A (ja) * 2010-08-26 2012-04-05 Nichia Chem Ind Ltd 半導体発光素子
JP2012227311A (ja) * 2011-04-19 2012-11-15 Nichia Chem Ind Ltd 半導体発光素子
JP2012044194A (ja) * 2011-09-15 2012-03-01 Toshiba Corp 半導体発光素子、ウェーハ、半導体発光素子の製造方法及びウェーハの製造方法
JP2015079953A (ja) * 2013-09-13 2015-04-23 日亜化学工業株式会社 発光素子
JP2015088523A (ja) * 2013-10-28 2015-05-07 株式会社東芝 半導体発光装置
JP2016018951A (ja) * 2014-07-10 2016-02-01 シャープ株式会社 半導体発光素子
KR20170037565A (ko) * 2015-09-25 2017-04-04 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광장치
KR102623615B1 (ko) 2015-09-25 2024-01-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지 및 발광장치
TWI841224B (zh) 2022-08-05 2024-05-01 南亞科技股份有限公司 具有複合互連結構的半導體元件結構及其製備方法

Also Published As

Publication number Publication date
US8217568B2 (en) 2012-07-10
KR101346538B1 (ko) 2013-12-31
US20100201254A1 (en) 2010-08-12
CN102232249B (zh) 2013-11-06
CN102232249A (zh) 2011-11-02
KR20100075844A (ko) 2010-07-05
JP5333226B2 (ja) 2013-11-06
JPWO2009041318A1 (ja) 2011-01-27
TW200931684A (en) 2009-07-16
TWI381553B (zh) 2013-01-01

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