WO2009041044A1 - 半導体モジュール、半導体モジュールの製造方法および携帯機器 - Google Patents

半導体モジュール、半導体モジュールの製造方法および携帯機器 Download PDF

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Publication number
WO2009041044A1
WO2009041044A1 PCT/JP2008/002663 JP2008002663W WO2009041044A1 WO 2009041044 A1 WO2009041044 A1 WO 2009041044A1 JP 2008002663 W JP2008002663 W JP 2008002663W WO 2009041044 A1 WO2009041044 A1 WO 2009041044A1
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Prior art keywords
semiconductor module
portable device
electrode
insulating resin
manufacturing
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PCT/JP2008/002663
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English (en)
French (fr)
Inventor
Yasuyuki Yanase
Yoshio Okayama
Ryosuke Usui
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Sanyo Electric Co., Ltd.
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Publication date
Application filed by Sanyo Electric Co., Ltd. filed Critical Sanyo Electric Co., Ltd.
Priority to US12/679,595 priority Critical patent/US8362611B2/en
Publication of WO2009041044A1 publication Critical patent/WO2009041044A1/ja

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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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Abstract

　半導体モジュール１０は、配線層２０、絶縁樹脂層３０、半導体素子４０がこの順で圧着により積層された構造を備える。配線層２０には、半導体素子４０の各素子電極４２と対応する位置に、基部２４と先端部２６とを有する突起電極２２が設けられる。突起電極２２は絶縁樹脂層３０を貫通して、対応する素子電極４２と電気的に接続している。
PCT/JP2008/002663 2007-09-26 2008-09-25 半導体モジュール、半導体モジュールの製造方法および携帯機器 WO2009041044A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/679,595 US8362611B2 (en) 2007-09-26 2008-09-25 Semiconductor module, method for manufacturing semiconductor module, and portable device

Applications Claiming Priority (2)

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JP2007-250216 2007-09-26
JP2007250216A JP5134899B2 (ja) 2007-09-26 2007-09-26 半導体モジュール、半導体モジュールの製造方法および携帯機器

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WO2009041044A1 true WO2009041044A1 (ja) 2009-04-02

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US7977160B2 (en) * 2009-08-10 2011-07-12 GlobalFoundries, Inc. Semiconductor devices having stress relief layers and methods for fabricating the same
JP5002633B2 (ja) * 2009-09-30 2012-08-15 三洋電機株式会社 半導体モジュールおよび携帯機器
US8970046B2 (en) * 2011-07-18 2015-03-03 Samsung Electronics Co., Ltd. Semiconductor packages and methods of forming the same
TWM433634U (en) * 2012-03-23 2012-07-11 Unimicron Technology Corp Semiconductor substrate

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120196407A1 (en) * 2011-01-28 2012-08-02 Shiann-Ming Liou Single layer bga substrate process
CN103339716A (zh) * 2011-01-28 2013-10-02 马维尔国际贸易有限公司 单层bga基板工艺
US8673689B2 (en) * 2011-01-28 2014-03-18 Marvell World Trade Ltd. Single layer BGA substrate process
KR20140038944A (ko) * 2011-01-28 2014-03-31 마벨 월드 트레이드 리미티드 단일 레이어 bga 기판 공정
US8940585B2 (en) 2011-01-28 2015-01-27 Marvell World Trade Ltd. Single layer BGA substrate process
TWI583267B (zh) * 2011-01-28 2017-05-11 馬維爾國際貿易有限公司 單層球形柵格陣列基材製程方法
KR101938344B1 (ko) 2011-01-28 2019-01-14 마벨 월드 트레이드 리미티드 단일 레이어 bga 기판 공정

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JP2009081310A (ja) 2009-04-16
US20100207270A1 (en) 2010-08-19
US8362611B2 (en) 2013-01-29

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