WO2009034775A1 - 焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット-バッキングプレート組立体 - Google Patents
焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット-バッキングプレート組立体 Download PDFInfo
- Publication number
- WO2009034775A1 WO2009034775A1 PCT/JP2008/062908 JP2008062908W WO2009034775A1 WO 2009034775 A1 WO2009034775 A1 WO 2009034775A1 JP 2008062908 W JP2008062908 W JP 2008062908W WO 2009034775 A1 WO2009034775 A1 WO 2009034775A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sintered body
- sputtering target
- backing plate
- plate assembly
- group element
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009532101A JP5396276B2 (ja) | 2007-09-13 | 2008-07-17 | 焼結体の製造方法、焼結体ターゲット及びスパッタリングターゲット−バッキングプレート組立体 |
US12/676,767 US20100206724A1 (en) | 2007-09-13 | 2008-07-17 | Method of Producing Sintered Compact, Sintered Compact, Sputtering Target Formed from the same, and Sputtering Target-Backing Plate Assembly |
EP08791262.2A EP2186917B1 (en) | 2007-09-13 | 2008-07-17 | Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly |
KR1020137017700A KR101552028B1 (ko) | 2007-09-13 | 2008-07-17 | 소결체의 제조 방법, 소결체, 당해 소결체로 이루어지는 스퍼터링 타겟 및 스퍼터링 타겟-백킹 플레이트 조립체 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-238135 | 2007-09-13 | ||
JP2007238135 | 2007-09-13 | ||
JP2008054397 | 2008-03-05 | ||
JP2008-054397 | 2008-03-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009034775A1 true WO2009034775A1 (ja) | 2009-03-19 |
Family
ID=40451787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062908 WO2009034775A1 (ja) | 2007-09-13 | 2008-07-17 | 焼結体の製造方法、焼結体、当該焼結体からなるスパッタリングターゲット及びスパッタリングターゲット-バッキングプレート組立体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100206724A1 (ja) |
EP (1) | EP2186917B1 (ja) |
JP (1) | JP5396276B2 (ja) |
KR (3) | KR20120068967A (ja) |
TW (2) | TWI488984B (ja) |
WO (1) | WO2009034775A1 (ja) |
Cited By (14)
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---|---|---|---|---|
JP2010265544A (ja) * | 2009-04-14 | 2010-11-25 | Kobelco Kaken:Kk | Cu−Ga合金スパッタリングターゲットおよびその製造方法 |
WO2011146913A2 (en) * | 2010-05-21 | 2011-11-24 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
RU2446229C1 (ru) * | 2010-12-01 | 2012-03-27 | Учреждение Российской академии наук ИНСТИТУТ ФИЗИКИ ТВЕРДОГО ТЕЛА РАН (ИФТТ РАН) | Способ получения мишени для распыления из сплава на основе алюминия |
RU2446228C1 (ru) * | 2010-12-01 | 2012-03-27 | Учреждение Российской академии наук ИНСТИТУТ ФИЗИКИ ТВЕРДОГО ТЕЛА РАН (ИФТТ РАН) | Способ получения распыляемой мишени из сплава на основе алюминия |
US8268665B2 (en) | 2006-11-02 | 2012-09-18 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US8288198B2 (en) | 2006-05-12 | 2012-10-16 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
US8410468B2 (en) | 2009-07-02 | 2013-04-02 | Advanced Technology Materials, Inc. | Hollow GST structure with dielectric fill |
US8617972B2 (en) | 2009-05-22 | 2013-12-31 | Advanced Technology Materials, Inc. | Low temperature GST process |
US8674127B2 (en) | 2008-05-02 | 2014-03-18 | Advanced Technology Materials, Inc. | Antimony compounds useful for deposition of antimony-containing materials |
US8796068B2 (en) | 2008-02-24 | 2014-08-05 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
US9012876B2 (en) | 2010-03-26 | 2015-04-21 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
JP2017025349A (ja) * | 2015-07-15 | 2017-02-02 | 三菱マテリアル株式会社 | Te−Ge系スパッタリングターゲット、及び、Te−Ge系スパッタリングターゲットの製造方法 |
US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
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EP2062994B1 (en) * | 2006-10-13 | 2016-07-27 | JX Nippon Mining & Metals Corporation | Sb-Te BASE ALLOY SINTER SPUTTERING TARGET |
WO2009116213A1 (ja) * | 2008-03-17 | 2009-09-24 | 日鉱金属株式会社 | 焼結体ターゲット及び焼結体の製造方法 |
WO2010137485A1 (ja) | 2009-05-27 | 2010-12-02 | Jx日鉱日石金属株式会社 | 焼結体ターゲット及び焼結体の製造方法 |
DE102009031302A1 (de) * | 2009-06-30 | 2011-01-05 | O-Flexx Technologies Gmbh | Verfahren zur Herstellung von thermoelektrischen Schichten |
EP2518179B1 (en) | 2009-12-24 | 2016-11-16 | JX Nippon Mining & Metals Corporation | Gadolinium sputtering target and method for manufacturing the target |
US20120279857A1 (en) | 2010-04-26 | 2012-11-08 | Jx Nippon Mining & Metals Corporation | Sb-Te-Based Alloy Sintered Compact Sputtering Target |
SG189977A1 (en) | 2010-10-27 | 2013-06-28 | Jx Nippon Mining & Metals Corp | Sputtering target backing plate assembly and method for producing same |
US8426242B2 (en) | 2011-02-01 | 2013-04-23 | Macronix International Co., Ltd. | Composite target sputtering for forming doped phase change materials |
US8871143B2 (en) * | 2012-01-20 | 2014-10-28 | Leonard Nanis | Amalgam method for forming a sputter target useful in the manufacture of thin-film solar photovoltaic cells |
JP5612147B2 (ja) * | 2013-03-11 | 2014-10-22 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
KR20150007865A (ko) | 2013-07-12 | 2015-01-21 | 삼성디스플레이 주식회사 | 스퍼터링 타겟의 제조 방법, 그 방법으로 제조된 스퍼터링 타겟 및 그 스퍼터링 타겟을 이용하여 유기 발광 표시 장치를 제조하는 방법 |
US9916958B1 (en) | 2014-01-30 | 2018-03-13 | Radiation Monitoring Devices, Inc. | Alkali semi-metal films and method and apparatus for fabricating them |
SG11201604727UA (en) | 2014-03-25 | 2016-07-28 | Jx Nippon Mining & Metals Corp | Sputtering target of sintered sb-te-based alloy |
JP6021861B2 (ja) * | 2014-08-06 | 2016-11-09 | Jx金属株式会社 | スパッタリングターゲット−バッキングプレート接合体 |
US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
JP2020132996A (ja) | 2019-02-20 | 2020-08-31 | 三菱マテリアル株式会社 | スパッタリングターゲット |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03180468A (ja) | 1989-12-08 | 1991-08-06 | Matsushita Electric Ind Co Ltd | スパッタ用ターゲットの製造方法 |
JPH05311423A (ja) * | 1992-05-12 | 1993-11-22 | Dowa Mining Co Ltd | スパッタリング・ターゲットの製造方法 |
JPH1081962A (ja) | 1996-09-06 | 1998-03-31 | Sumitomo Metal Mining Co Ltd | Ge−Te−Sb系スパッタリング用ターゲット材の製造方法 |
JP2000265262A (ja) | 1999-03-16 | 2000-09-26 | Sanyo Special Steel Co Ltd | Ge−Sb−Te系スパッタリング用ターゲット材の製造方法 |
JP2001098366A (ja) | 1999-07-26 | 2001-04-10 | Sanyo Special Steel Co Ltd | Ge−Sb−Te系スパッタリングターゲット材の製造方法 |
JP2001123266A (ja) | 1999-10-21 | 2001-05-08 | Sanyo Special Steel Co Ltd | Ge−Sb−Te系スパッタリングターゲット材の製造方法 |
JP2004162109A (ja) * | 2002-11-12 | 2004-06-10 | Nikko Materials Co Ltd | スパッタリングターゲット及び同製造用粉末 |
WO2006059429A1 (ja) * | 2004-11-30 | 2006-06-08 | Nippon Mining & Metals Co., Ltd. | Sb-Te系合金焼結体スパッタリングターゲット |
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JP3625928B2 (ja) * | 1995-10-17 | 2005-03-02 | 東海カーボン株式会社 | Ta/Si系焼結合金の製造方法 |
TWI232241B (en) * | 2001-03-13 | 2005-05-11 | Ind Tech Res Inst | Method of regenerating a phase change sputtering target for optical storage media |
US7156964B2 (en) * | 2002-02-25 | 2007-01-02 | Nippon Mining & Metals Co., Ltd. | Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target |
JP3850783B2 (ja) * | 2002-10-08 | 2006-11-29 | Tdk株式会社 | 相変化材料ターゲットおよびその製造方法 |
JP4276849B2 (ja) * | 2003-01-27 | 2009-06-10 | 日鉱金属株式会社 | Ge−Cr合金スパッタリングターゲット |
DE602004026281D1 (ja) * | 2003-03-04 | 2010-05-12 | Nippon Mining Co | |
TWI365914B (en) * | 2003-07-03 | 2012-06-11 | Mitsubishi Materials Corp | Phase change recording film having high electrical resistance and sputtering target for forming phase change recording film |
JP4642780B2 (ja) * | 2004-12-24 | 2011-03-02 | Jx日鉱日石金属株式会社 | Sb−Te系合金焼結体ターゲット及びその製造方法 |
KR100947197B1 (ko) * | 2005-01-18 | 2010-03-11 | 닛코 킨조쿠 가부시키가이샤 | 소결용 Sb-Te 계 합금 분말 및 이 분말을 소결하여얻은 소결체 스퍼터링 타겟 그리고 소결용 Sb-Te 계합금 분말의 제조 방법 |
US20070099332A1 (en) * | 2005-07-07 | 2007-05-03 | Honeywell International Inc. | Chalcogenide PVD components and methods of formation |
EP2062994B1 (en) * | 2006-10-13 | 2016-07-27 | JX Nippon Mining & Metals Corporation | Sb-Te BASE ALLOY SINTER SPUTTERING TARGET |
WO2009116213A1 (ja) * | 2008-03-17 | 2009-09-24 | 日鉱金属株式会社 | 焼結体ターゲット及び焼結体の製造方法 |
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US20120279857A1 (en) * | 2010-04-26 | 2012-11-08 | Jx Nippon Mining & Metals Corporation | Sb-Te-Based Alloy Sintered Compact Sputtering Target |
-
2008
- 2008-07-17 WO PCT/JP2008/062908 patent/WO2009034775A1/ja active Application Filing
- 2008-07-17 KR KR1020127012048A patent/KR20120068967A/ko active Search and Examination
- 2008-07-17 KR KR1020137017700A patent/KR101552028B1/ko active IP Right Grant
- 2008-07-17 KR KR1020107005497A patent/KR101175091B1/ko active IP Right Grant
- 2008-07-17 EP EP08791262.2A patent/EP2186917B1/en active Active
- 2008-07-17 JP JP2009532101A patent/JP5396276B2/ja active Active
- 2008-07-17 US US12/676,767 patent/US20100206724A1/en not_active Abandoned
- 2008-07-29 TW TW102141818A patent/TWI488984B/zh active
- 2008-07-29 TW TW097128595A patent/TWI432590B/zh active
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JPH03180468A (ja) | 1989-12-08 | 1991-08-06 | Matsushita Electric Ind Co Ltd | スパッタ用ターゲットの製造方法 |
JPH05311423A (ja) * | 1992-05-12 | 1993-11-22 | Dowa Mining Co Ltd | スパッタリング・ターゲットの製造方法 |
JPH1081962A (ja) | 1996-09-06 | 1998-03-31 | Sumitomo Metal Mining Co Ltd | Ge−Te−Sb系スパッタリング用ターゲット材の製造方法 |
JP2000265262A (ja) | 1999-03-16 | 2000-09-26 | Sanyo Special Steel Co Ltd | Ge−Sb−Te系スパッタリング用ターゲット材の製造方法 |
JP2001098366A (ja) | 1999-07-26 | 2001-04-10 | Sanyo Special Steel Co Ltd | Ge−Sb−Te系スパッタリングターゲット材の製造方法 |
JP2001123266A (ja) | 1999-10-21 | 2001-05-08 | Sanyo Special Steel Co Ltd | Ge−Sb−Te系スパッタリングターゲット材の製造方法 |
JP2004162109A (ja) * | 2002-11-12 | 2004-06-10 | Nikko Materials Co Ltd | スパッタリングターゲット及び同製造用粉末 |
WO2006059429A1 (ja) * | 2004-11-30 | 2006-06-08 | Nippon Mining & Metals Co., Ltd. | Sb-Te系合金焼結体スパッタリングターゲット |
Non-Patent Citations (1)
Title |
---|
See also references of EP2186917A4 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8679894B2 (en) | 2006-05-12 | 2014-03-25 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
US8288198B2 (en) | 2006-05-12 | 2012-10-16 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
US9219232B2 (en) | 2006-11-02 | 2015-12-22 | Entegris, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US8709863B2 (en) | 2006-11-02 | 2014-04-29 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US8268665B2 (en) | 2006-11-02 | 2012-09-18 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US9537095B2 (en) | 2008-02-24 | 2017-01-03 | Entegris, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
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KR101175091B1 (ko) | 2012-08-21 |
KR20130085447A (ko) | 2013-07-29 |
US20100206724A1 (en) | 2010-08-19 |
TWI488984B (zh) | 2015-06-21 |
KR20120068967A (ko) | 2012-06-27 |
TW200918679A (en) | 2009-05-01 |
JPWO2009034775A1 (ja) | 2010-12-24 |
EP2186917B1 (en) | 2021-04-21 |
KR20100047897A (ko) | 2010-05-10 |
TW201414860A (zh) | 2014-04-16 |
EP2186917A1 (en) | 2010-05-19 |
KR101552028B1 (ko) | 2015-09-09 |
TWI432590B (zh) | 2014-04-01 |
JP5396276B2 (ja) | 2014-01-22 |
EP2186917A4 (en) | 2016-07-20 |
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