WO2009031520A1 - プラズマ処理装置およびプラズマ処理方法ならびに半導体素子 - Google Patents

プラズマ処理装置およびプラズマ処理方法ならびに半導体素子 Download PDF

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Publication number
WO2009031520A1
WO2009031520A1 PCT/JP2008/065729 JP2008065729W WO2009031520A1 WO 2009031520 A1 WO2009031520 A1 WO 2009031520A1 JP 2008065729 W JP2008065729 W JP 2008065729W WO 2009031520 A1 WO2009031520 A1 WO 2009031520A1
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WO
WIPO (PCT)
Prior art keywords
plasma treatment
chamber
anode electrode
treatment apparatus
semiconductor element
Prior art date
Application number
PCT/JP2008/065729
Other languages
English (en)
French (fr)
Inventor
Katsushi Kishimoto
Yusuke Fukuoka
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to US12/676,526 priority Critical patent/US8395250B2/en
Priority to EP08829812A priority patent/EP2202785A4/en
Priority to JP2009531225A priority patent/JP4936297B2/ja
Publication of WO2009031520A1 publication Critical patent/WO2009031520A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

　プラズマ処理装置（５０）のチャンバー（１）内には、カソード電極（２）とアノード電極（３）とが間隔を隔てて配設されている。カソード電極（２）に電力供給部（４）から電力が供給される。アノード電極（３）は電気的に接地されて、基板（７）が設置される。アノード電極（３）には、ヒータ（２１）が内蔵されている。チャンバー（１）の上壁部には排気口（１９ａ）が設けられて、排気管（２０ａ）を介して真空ポンプ（２０ｂ）に接続されている。チャンバー（１）の壁面の下壁部にはガス導入口（１０）が設けられている。チャンバー（１）の外には、ガス供給部（８）が設けられている。
PCT/JP2008/065729 2007-09-04 2008-09-02 プラズマ処理装置およびプラズマ処理方法ならびに半導体素子 WO2009031520A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/676,526 US8395250B2 (en) 2007-09-04 2008-09-02 Plasma processing apparatus with an exhaust port above the substrate
EP08829812A EP2202785A4 (en) 2007-09-04 2008-09-02 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR ELEMENT
JP2009531225A JP4936297B2 (ja) 2007-09-04 2008-09-02 プラズマ処理装置およびプラズマ処理方法ならびに半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-228802 2007-09-04
JP2007228802 2007-09-04

Publications (1)

Publication Number Publication Date
WO2009031520A1 true WO2009031520A1 (ja) 2009-03-12

Family

ID=40428836

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065729 WO2009031520A1 (ja) 2007-09-04 2008-09-02 プラズマ処理装置およびプラズマ処理方法ならびに半導体素子

Country Status (4)

Country Link
US (1) US8395250B2 (ja)
EP (1) EP2202785A4 (ja)
JP (1) JP4936297B2 (ja)
WO (1) WO2009031520A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081195A1 (ja) * 2009-12-29 2011-07-07 シャープ株式会社 半導体膜および光電変換装置

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JP5393667B2 (ja) * 2008-06-02 2014-01-22 シャープ株式会社 プラズマ処理装置、それを用いた成膜方法およびエッチング方法
CN105839074A (zh) 2015-02-03 2016-08-10 Lg电子株式会社 用于太阳能电池的金属有机化学气相沉积设备
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
KR20230156441A (ko) 2019-08-16 2023-11-14 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착
TWI798760B (zh) * 2020-08-26 2023-04-11 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法、基板保持具及程式

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JPS6117151A (ja) * 1984-07-03 1986-01-25 Minolta Camera Co Ltd プラズマｃｖｄ装置
JPH09223685A (ja) * 1996-02-14 1997-08-26 Sony Corp プラズマ処理装置およびプラズマ処理方法
JP2001081559A (ja) 1999-09-09 2001-03-27 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置における温度制御方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081195A1 (ja) * 2009-12-29 2011-07-07 シャープ株式会社 半導体膜および光電変換装置
JP2011138979A (ja) * 2009-12-29 2011-07-14 Sharp Corp 光電変換装置用の微結晶シリコン膜および光電変換装置

Also Published As

Publication number Publication date
EP2202785A4 (en) 2010-11-10
US8395250B2 (en) 2013-03-12
JP4936297B2 (ja) 2012-05-23
EP2202785A1 (en) 2010-06-30
US20100193915A1 (en) 2010-08-05
JPWO2009031520A1 (ja) 2010-12-16

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