WO2004051702A3 - Apparatus for treating surfaces of a substrate with atmospheric pressure plasma - Google Patents

Apparatus for treating surfaces of a substrate with atmospheric pressure plasma Download PDF

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Publication number
WO2004051702A3
WO2004051702A3 PCT/KR2003/002485 KR0302485W WO2004051702A3 WO 2004051702 A3 WO2004051702 A3 WO 2004051702A3 KR 0302485 W KR0302485 W KR 0302485W WO 2004051702 A3 WO2004051702 A3 WO 2004051702A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing gas
substrate
plasma
lower electrode
plasma generating
Prior art date
Application number
PCT/KR2003/002485
Other languages
French (fr)
Other versions
WO2004051702A2 (en
Inventor
Hag-Joo Lee
Original Assignee
Sem Technology Co Ltd
Hag-Joo Lee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sem Technology Co Ltd, Hag-Joo Lee filed Critical Sem Technology Co Ltd
Priority to AU2003279587A priority Critical patent/AU2003279587A1/en
Priority to JP2004556947A priority patent/JP4409439B2/en
Publication of WO2004051702A2 publication Critical patent/WO2004051702A2/en
Publication of WO2004051702A3 publication Critical patent/WO2004051702A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

There is provided a surface treatment apparatus with atmospheric pressure plasma. The surface treatment apparatus is comprised of a processing gas storage part and a plasma generating part located below the processing gas storage part in which a) the processing gas storage part comprises a first inlet port through which a processing gas is introduced, and b) the plasma generating part comprising an upper electrode and a lower electrode facing each other, a plasma generating space formed between the electrodes, at least one dielectric insulating the upper electrode and the lower electrode, a radiator lowering the surface temperature of the electrode, a second inlet port through which the processing gas is introduced from the processing gas storage part into the plasma generating space, an outlet port through which a plasma and the processing gas which has not been converted into the plasma are driven to outside of the plasma generating space, and an alternating current supply applying an alternating current voltage, wherein both the upper electrode and the lower electrode are flat-panel electrodes, the outlet port is formed on the lower electrode, and a substrate is located below the lower electrode. The apparatus is not limited to a shape of the substrate, and makes it possible to widen effective processing area of the substrate as well as to perform consecutive processes under atmospheric pressure.
PCT/KR2003/002485 2002-12-02 2003-11-19 Apparatus for treating surfaces of a substrate with atmospheric pressure plasma WO2004051702A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003279587A AU2003279587A1 (en) 2002-12-02 2003-11-19 Apparatus for treating surfaces of a substrate with atmospheric pressure plasma
JP2004556947A JP4409439B2 (en) 2002-12-02 2003-11-19 Surface treatment equipment using atmospheric pressure plasma

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0076071A KR100476136B1 (en) 2002-12-02 2002-12-02 Apparatus for treating the surface of a substrate with atmospheric pressure plasma
KR10-2002-0076071 2002-12-02

Publications (2)

Publication Number Publication Date
WO2004051702A2 WO2004051702A2 (en) 2004-06-17
WO2004051702A3 true WO2004051702A3 (en) 2004-12-02

Family

ID=36165408

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2003/002485 WO2004051702A2 (en) 2002-12-02 2003-11-19 Apparatus for treating surfaces of a substrate with atmospheric pressure plasma

Country Status (6)

Country Link
JP (1) JP4409439B2 (en)
KR (1) KR100476136B1 (en)
CN (1) CN100471993C (en)
AU (1) AU2003279587A1 (en)
TW (1) TWI227951B (en)
WO (1) WO2004051702A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9373497B2 (en) 2007-04-04 2016-06-21 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US9564344B2 (en) 2009-12-11 2017-02-07 Novellus Systems, Inc. Ultra low silicon loss high dose implant strip

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KR100708320B1 (en) * 2004-04-22 2007-04-17 김기현 Apparatus for surface modification of casing-parts using atmospheric-pressure microwave plasma and method thereof
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
DE102005040596B4 (en) * 2005-06-17 2009-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. A method of removing a doped surface layer on backs of crystalline silicon solar wafers
EP1907596A4 (en) * 2005-07-26 2009-09-16 Psm Inc Injection type plasma treatment apparatus and method
JP2009505342A (en) * 2005-08-11 2009-02-05 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ Plasma generating apparatus and plasma generating method
JP4782529B2 (en) * 2005-10-06 2011-09-28 エア・ウォーター株式会社 Manufacturing method of display device
KR100708212B1 (en) * 2005-10-07 2007-04-16 주식회사 피에스엠 Atmospheric pressure plasma shower unit and wire bonding apparatus and method using the same unit
KR100720527B1 (en) * 2005-12-28 2007-05-22 동부일렉트로닉스 주식회사 Cmos image sensor and method for fabricating the same
KR100760651B1 (en) * 2006-01-24 2007-09-21 주식회사 셈테크놀러지 Apparatus for treating the surface of a substrate having supply pipe for treatment gas
KR101293119B1 (en) * 2006-11-28 2013-08-05 엘아이지에이디피 주식회사 Atmospheric pressure Plasma surface treatment apparatus and Atmospheric pressure plasma surface treatment method
KR101333878B1 (en) * 2007-11-20 2013-11-27 엘지전자 주식회사 Apparatus for treating surface of substrate with plasma in atmospheric pressure
KR100975665B1 (en) * 2008-01-25 2010-08-17 (주)에스이 플라즈마 Atmosphere Pressure Plasma Generation Device for Mass Production
US8518284B2 (en) 2008-05-02 2013-08-27 Tel Solar Ag Plasma treatment apparatus and method for plasma-assisted treatment of substrates
KR101791685B1 (en) * 2008-10-14 2017-11-20 노벨러스 시스템즈, 인코포레이티드 High Dose Implantation Strip (HDIS) In H2 Base Chemistry
US8454850B2 (en) 2009-09-02 2013-06-04 Air Products And Chemicals, Inc. Method for the removal of surface oxides by electron attachment
KR101770008B1 (en) 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 Enhanced passivation process to protect silicon prior to high dose implant strip
JP2013538288A (en) * 2010-07-21 2013-10-10 ダウ コーニング フランス Plasma treatment of substrate
AU2012229363B2 (en) * 2011-03-11 2015-08-27 Purdue Research Foundation Generation of microbiocide inside a package utilizing a controlled gas composition
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US20130087287A1 (en) * 2011-10-10 2013-04-11 Korea Institute Of Machinery & Materials Plasma reactor for removal of contaminants
KR101513423B1 (en) 2013-04-04 2015-04-21 주식회사 테스 Plasma generator and reaction chamber for thin film deposition, which comprises the same
CN104779136A (en) * 2014-01-10 2015-07-15 上海和辉光电有限公司 Method and equipment for removing photoresist
KR101657762B1 (en) * 2014-06-23 2016-09-19 광운대학교 산학협력단 Plasma Jet Devices with Electric Safty and Heat-Dissipation
CN104936371B (en) * 2015-06-09 2017-07-07 北京三十四科技有限公司 A kind of coreless armature dielectric impedance structure
CN105047514B (en) * 2015-07-27 2017-06-13 郑州大学 In the method that glass surface plasma etching forms texture structure
KR102201183B1 (en) * 2018-12-11 2021-01-13 한국과학기술원 Method for recovering electrical property of two-dimensional material using hydrogen plasma and device thereof
CN109526131A (en) * 2018-12-26 2019-03-26 哈尔滨工业大学 Strengthen the method for plasma discharge under a kind of gas flowing environment using more ground electrodes
CN113179676B (en) * 2019-11-27 2024-04-09 东芝三菱电机产业***株式会社 Active gas generating device
CN112139151A (en) * 2020-09-11 2020-12-29 韩山师范学院 Surface cleaning device for large equipment
JPWO2022114013A1 (en) * 2020-11-30 2022-06-02
KR20230069274A (en) * 2021-11-11 2023-05-19 삼성디스플레이 주식회사 Display device and manufacturing method thereof

Citations (4)

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EP0383550A2 (en) * 1989-02-14 1990-08-22 Nippon Light Metal Co., Ltd. Plasma forming electrode and method of using the same
JPH07278850A (en) * 1994-04-15 1995-10-24 Fujitsu Ltd Plasma treatment device and plasm treatment
EP0749147A2 (en) * 1995-06-13 1996-12-18 Ipsen Industries International Gesellschaft Mit Beschränkter Haftung Method and device for controlling the electrical current density over a workpiece during heat treatment by plasma
JPH09279350A (en) * 1996-04-11 1997-10-28 Anelva Corp Surface treating device

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JPH0963132A (en) * 1995-08-23 1997-03-07 Seiko Epson Corp Production of substrate for optical information recording medium and device therefor
JP4161533B2 (en) * 2000-12-28 2008-10-08 松下電工株式会社 Plasma processing method and plasma processing apparatus
JP2002253952A (en) * 2001-02-28 2002-09-10 Okura Ind Co Ltd Method and apparatus for treating surface with plasma

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0383550A2 (en) * 1989-02-14 1990-08-22 Nippon Light Metal Co., Ltd. Plasma forming electrode and method of using the same
JPH07278850A (en) * 1994-04-15 1995-10-24 Fujitsu Ltd Plasma treatment device and plasm treatment
EP0749147A2 (en) * 1995-06-13 1996-12-18 Ipsen Industries International Gesellschaft Mit Beschränkter Haftung Method and device for controlling the electrical current density over a workpiece during heat treatment by plasma
JPH09279350A (en) * 1996-04-11 1997-10-28 Anelva Corp Surface treating device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9373497B2 (en) 2007-04-04 2016-06-21 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US9564344B2 (en) 2009-12-11 2017-02-07 Novellus Systems, Inc. Ultra low silicon loss high dose implant strip
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films

Also Published As

Publication number Publication date
AU2003279587A1 (en) 2004-06-23
AU2003279587A8 (en) 2004-06-23
TWI227951B (en) 2005-02-11
WO2004051702A2 (en) 2004-06-17
CN1720349A (en) 2006-01-11
CN100471993C (en) 2009-03-25
JP4409439B2 (en) 2010-02-03
KR20040048272A (en) 2004-06-07
KR100476136B1 (en) 2005-03-10
JP2006509331A (en) 2006-03-16
TW200414577A (en) 2004-08-01

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