JP4936297B2 - プラズマ処理装置およびプラズマ処理方法ならびに半導体素子 - Google Patents
プラズマ処理装置およびプラズマ処理方法ならびに半導体素子 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 94
- 238000003672 processing method Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 192
- 238000009832 plasma treatment Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 description 97
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 55
- 239000010408 film Substances 0.000 description 37
- 230000000052 comparative effect Effects 0.000 description 11
- 238000001816 cooling Methods 0.000 description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
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- 230000008025 crystallization Effects 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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Description
ここでは、プラズマ処理装置として、チャンバー内において基板をほぼ鉛直(垂直)に配置した状態で基板に所定の膜を形成するプラズマCVD(Chemical Vapor Deposition)装置について説明する。このプラズマCVD装置は、平行平板型の電極構造を備えたプラズマCVD装置である。図1に示すように、プラズマ処理装置50のチャンバー1内には、互いに対向するカソード電極2とアノード電極3とが間隔を隔てて配設されている。このカソード電極2とアノード電極3とは、互いに間隔を隔てて対向した放電面2a,3aを有する電極構造であれば、平行平板型に限られない。
図1に示されるプラズマCVD装置50では、チャンバー1の壁面の下部(下壁部)にガス導入口10を設けた場合を例に挙げた。ガス導入口としては、この他に、図2に示すように、基板7と対向するカソード電極2の放電面2aに複数のガス導入口10を設けた構造としてもよい。カソード電極2の内部は空洞となっており、その空洞に導入されたガスが複数のガス導入口10を介して、カソード電極2とアノード電極3との間の領域へ供給されることになる。
ここでは、プラズマ処理装置として、チャンバー内においてほぼ水平方向に配置される基板を垂直(縦方向に)に複数配置した状態で、同時にプラズマ処理を施すプラズマCVD装置の一例について説明する。このプラズマCVD装置は、平行平板型の電極構造を備えたプラズマCVD装置である。
ここでは、プラズマ処理装置として、チャンバー内においてほぼ水平方向に配置される基板を鉛直(垂直、縦方向)に複数配置した状態で、同時にプラズマ処理を施すプラズマCVD装置の他の例について説明する。
Claims (6)
- プラズマ処理を施す被処理物を搬入し、搬入した被処理物にプラズマ処理を行うプラズマ処理装置であって、
プラズマ処理を行うチャンバーと、
前記チャンバー内において、互いに放電面を対向させて水平に配設された平行平板型のカソード電極およびアノード電極と、
前記カソード電極または前記アノード電極上に被処理物を保持する保持部と、
前記カソード電極と前記アノード電極との間のプラズマが生成されるプラズマ生成空間に処理用ガスを供給する導入口と、
前記チャンバー内のガスを排気する排気口と
を備え、
前記排気口は、前記導入口より供給されて前記カソード電極と前記アノード電極との間より前記チャンバー内の側方に流出する前記処理用ガスを上方に排気可能なように、前記チャンバーの上壁部に配設され、かつ前記上壁部における前記アノード電極の上部中央に配設されている、プラズマ処理装置。 - 前記保持部は、被処理物として水平方向に保持した基板を、鉛直方向に複数保持する積層保持部を含む、請求項1記載のプラズマ処理装置。
- 前記チャンバー内のガスを排気する他の排気口を備え、
前記他の排気口は、前記チャンバーの下壁部に配設され、かつ前記下壁部における前記アノード電極の下部中央に配設されている、請求項1または2に記載のプラズマ処理装置。 - プラズマ処理を施す被処理物を搬入し、搬入した被処理物にプラズマ処理を行うプラズマ処理装置であって、
プラズマ処理を行うチャンバーと、
前記チャンバー内において、互いに放電面を対向させて水平に配設された平行平板型のカソード電極およびアノード電極と、
前記カソード電極または前記アノード電極上に被処理物を保持する保持部と、
前記カソード電極と前記アノード電極との間のプラズマが生成されるプラズマ生成空間に処理用ガスを供給する導入口と、
前記チャンバー内のガスを排気する排気口と
を備え、
前記カソード電極と前記アノード電極は、前記チャンバー内において鉛直方向に複数配設され、
前記排気口は、前記導入口より供給されて前記カソード電極と前記アノード電極との間より前記チャンバー内の側方に流出する前記処理用ガスを上方に排気可能なように、前記チャンバーの上壁部に配設され、かつ前記上壁部における前記アノード電極の上部中央に配設されている、プラズマ処理装置。 - チャンバー内に搬入された被処理物にプラズマ処理を施すプラズマ処理方法であって、
前記チャンバー内において、互いに放電面を対向させて水平に配設された平行平板型のカソード電極とアノード電極との間に前記被処理物を保持する工程と、
前記カソード電極と前記アノード電極との間に処理用ガスを供給する工程と、
前記カソード電極と前記アノード電極との間のプラズマ生成空間にプラズマを生成する工程と、
前記被処理物を前記プラズマに晒すことにより、前記被処理物にプラズマ処理を施す工程と、
前記チャンバー内に供給されて前記カソード電極と前記アノード電極との間より前記チャンバー内の側方へ流出した前記処理用ガスを上方に排気可能なように、前記チャンバーの上壁部に配設され、かつ前記上壁部における前記アノード電極の上部中央の位置から排気する工程と
を備えた、プラズマ処理方法。 - 請求項1〜4のいずれかに記載のプラズマ処理装置または請求項5記載のプラズマ処理方法によって製造された、半導体素子。
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PCT/JP2008/065729 WO2009031520A1 (ja) | 2007-09-04 | 2008-09-02 | プラズマ処理装置およびプラズマ処理方法ならびに半導体素子 |
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JP5393667B2 (ja) * | 2008-06-02 | 2014-01-22 | シャープ株式会社 | プラズマ処理装置、それを用いた成膜方法およびエッチング方法 |
JP5219162B2 (ja) * | 2009-12-29 | 2013-06-26 | シャープ株式会社 | 光電変換装置 |
US10388820B2 (en) | 2015-02-03 | 2019-08-20 | Lg Electronics Inc. | Metal organic chemical vapor deposition apparatus for solar cell |
US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
KR20230037057A (ko) | 2019-08-16 | 2023-03-15 | 램 리써치 코포레이션 | 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 |
TWI798760B (zh) * | 2020-08-26 | 2023-04-11 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法、基板保持具及程式 |
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2008
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- 2008-09-02 WO PCT/JP2008/065729 patent/WO2009031520A1/ja active Application Filing
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09320966A (ja) * | 1996-05-27 | 1997-12-12 | Sharp Corp | プラズマ励起化学気相成長装置及びプラズマエッチング装置 |
JPH1012558A (ja) * | 1996-06-27 | 1998-01-16 | Mitsubishi Heavy Ind Ltd | プラズマ化学蒸着装置及び方法 |
JP2004214604A (ja) * | 2002-11-12 | 2004-07-29 | Sharp Corp | 半導体素子製造装置および半導体素子製造方法 |
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US8395250B2 (en) | 2013-03-12 |
EP2202785A4 (en) | 2010-11-10 |
WO2009031520A1 (ja) | 2009-03-12 |
EP2202785A1 (en) | 2010-06-30 |
US20100193915A1 (en) | 2010-08-05 |
JPWO2009031520A1 (ja) | 2010-12-16 |
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