WO2009028145A1 - 高輝度発光ダイオードの製造方法および発光素子基板並びに高輝度発光ダイオード - Google Patents
高輝度発光ダイオードの製造方法および発光素子基板並びに高輝度発光ダイオード Download PDFInfo
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- WO2009028145A1 WO2009028145A1 PCT/JP2008/002216 JP2008002216W WO2009028145A1 WO 2009028145 A1 WO2009028145 A1 WO 2009028145A1 JP 2008002216 W JP2008002216 W JP 2008002216W WO 2009028145 A1 WO2009028145 A1 WO 2009028145A1
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- WIPO (PCT)
- Prior art keywords
- iii
- ratio
- growth
- emitting diode
- light
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- 239000000758 substrate Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本発明は、GaAs基板を除去した面に第二の電流拡散層としてIII-V族化合物半導体をHVPE成長により形成する工程は、供給する原料ガスの形成当初のIII/V比を3以上にし、その後前記III/V比が相対的に低くなるように変化させ、且つIII/V比を3以上にして第二の電流拡散層を形成する時の成長温度を、III/V比を相対的に低くして成長する時の温度よりも低温域である550°C~700°C、III/V比を5以上にする場合は550°C~730°Cの範囲内の温度として成長を開始し、その後III/V比を相対的に低くして成長する時の温度と同じ温度まで昇温させることを特徴とする高輝度発光ダイオードの製造方法である。これによって、GaAs基板を除去した面に第二の電流拡散層をエピタキシャル成長する際に起こる成長膜の破壊を防ぎ、成長初期段階の界面に発生するマイクロ穴欠陥を抑えることができる。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009529974A JP5278323B2 (ja) | 2007-08-30 | 2008-08-14 | 高輝度発光ダイオードの製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007223705 | 2007-08-30 | ||
JP2007-223705 | 2007-08-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009028145A1 true WO2009028145A1 (ja) | 2009-03-05 |
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ID=40386888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/002216 WO2009028145A1 (ja) | 2007-08-30 | 2008-08-14 | 高輝度発光ダイオードの製造方法および発光素子基板並びに高輝度発光ダイオード |
Country Status (3)
Country | Link |
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JP (1) | JP5278323B2 (ja) |
TW (1) | TWI411126B (ja) |
WO (1) | WO2009028145A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011253893A (ja) * | 2010-06-01 | 2011-12-15 | Shin Etsu Handotai Co Ltd | 化合物半導体基板の製造方法及び化合物半導体基板 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269145A (ja) * | 1999-03-17 | 2000-09-29 | Sharp Corp | 化合物半導体の結晶成長方法および半導体発光素子 |
JP2003023177A (ja) * | 2001-07-06 | 2003-01-24 | Sharp Corp | 半導体発光素子の製造方法 |
JP2004260109A (ja) * | 2003-02-27 | 2004-09-16 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法、複合透光性基板及び発光素子 |
JP2004296707A (ja) * | 2003-03-26 | 2004-10-21 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法、複合透光性基板及び発光素子 |
JP2005150664A (ja) * | 2003-11-19 | 2005-06-09 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
JP2005277218A (ja) * | 2004-03-25 | 2005-10-06 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
WO2007088841A1 (ja) * | 2006-01-31 | 2007-08-09 | Shin-Etsu Handotai Co., Ltd. | 発光素子およびその製造方法 |
-
2008
- 2008-08-14 WO PCT/JP2008/002216 patent/WO2009028145A1/ja active Application Filing
- 2008-08-14 JP JP2009529974A patent/JP5278323B2/ja active Active
- 2008-08-21 TW TW097131961A patent/TWI411126B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269145A (ja) * | 1999-03-17 | 2000-09-29 | Sharp Corp | 化合物半導体の結晶成長方法および半導体発光素子 |
JP2003023177A (ja) * | 2001-07-06 | 2003-01-24 | Sharp Corp | 半導体発光素子の製造方法 |
JP2004260109A (ja) * | 2003-02-27 | 2004-09-16 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法、複合透光性基板及び発光素子 |
JP2004296707A (ja) * | 2003-03-26 | 2004-10-21 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法、複合透光性基板及び発光素子 |
JP2005150664A (ja) * | 2003-11-19 | 2005-06-09 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
JP2005277218A (ja) * | 2004-03-25 | 2005-10-06 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
WO2007088841A1 (ja) * | 2006-01-31 | 2007-08-09 | Shin-Etsu Handotai Co., Ltd. | 発光素子およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011253893A (ja) * | 2010-06-01 | 2011-12-15 | Shin Etsu Handotai Co Ltd | 化合物半導体基板の製造方法及び化合物半導体基板 |
Also Published As
Publication number | Publication date |
---|---|
JP5278323B2 (ja) | 2013-09-04 |
JPWO2009028145A1 (ja) | 2010-11-25 |
TWI411126B (zh) | 2013-10-01 |
TW200929616A (en) | 2009-07-01 |
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