WO2009020150A1 - Appareil composite à faisceau ionique focalisé, et procédé de surveillance d'usinage et procédé d'usinage utilisant un appareil composite à faisceau ionique focalisé - Google Patents
Appareil composite à faisceau ionique focalisé, et procédé de surveillance d'usinage et procédé d'usinage utilisant un appareil composite à faisceau ionique focalisé Download PDFInfo
- Publication number
- WO2009020150A1 WO2009020150A1 PCT/JP2008/064122 JP2008064122W WO2009020150A1 WO 2009020150 A1 WO2009020150 A1 WO 2009020150A1 JP 2008064122 W JP2008064122 W JP 2008064122W WO 2009020150 A1 WO2009020150 A1 WO 2009020150A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ion beam
- beam apparatus
- focused ion
- machining
- composite focused
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0805—Liquid metal sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
Landscapes
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- Plasma & Fusion (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electron Sources, Ion Sources (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/733,089 US8269194B2 (en) | 2007-08-08 | 2008-08-06 | Composite focused ion beam device, and processing observation method and processing method using the same |
JP2009526475A JPWO2009020150A1 (ja) | 2007-08-08 | 2008-08-06 | 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207097 | 2007-08-08 | ||
JP2007-207097 | 2007-08-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009020150A1 true WO2009020150A1 (fr) | 2009-02-12 |
Family
ID=40341382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/064122 WO2009020150A1 (fr) | 2007-08-08 | 2008-08-06 | Appareil composite à faisceau ionique focalisé, et procédé de surveillance d'usinage et procédé d'usinage utilisant un appareil composite à faisceau ionique focalisé |
Country Status (4)
Country | Link |
---|---|
US (1) | US8269194B2 (fr) |
JP (3) | JPWO2009020150A1 (fr) |
TW (1) | TWI442440B (fr) |
WO (1) | WO2009020150A1 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010251633A (ja) * | 2009-04-20 | 2010-11-04 | Fujikura Ltd | 酸化亜鉛基板の表面処理方法及び酸化亜鉛結晶の製造方法 |
JP2011210492A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 集束イオンビーム装置 |
WO2021053704A1 (fr) * | 2019-09-17 | 2021-03-25 | 株式会社日立ハイテク | Dispositif à faisceau ionique |
TWI813760B (zh) * | 2018-10-18 | 2023-09-01 | 日商日立高新技術科學股份有限公司 | 試料加工觀察方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110186748A1 (en) * | 2008-08-15 | 2011-08-04 | John Ruffell | Systems And Methods For Scanning A Beam Of Charged Particles |
US8546768B2 (en) * | 2008-09-15 | 2013-10-01 | Centre National De La Recherche Scientifique (C.N.R.S.) | Device for generating an ion beam with magnetic filter |
JP5390330B2 (ja) * | 2008-10-16 | 2014-01-15 | キヤノンアネルバ株式会社 | 基板処理装置およびそのクリーニング方法 |
JP5294919B2 (ja) * | 2009-02-23 | 2013-09-18 | キヤノン株式会社 | 被加工物の製造方法 |
DE102011006588A1 (de) * | 2011-03-31 | 2012-10-04 | Carl Zeiss Nts Gmbh | Teilchenstrahlgerät mit Detektoranordnung |
US8927942B2 (en) * | 2011-06-06 | 2015-01-06 | Centre National de la Recherche Scientifique—CNRS | Ion source, nanofabrication apparatus comprising such source, and a method for emitting ions |
JP6250331B2 (ja) * | 2012-08-30 | 2017-12-20 | 株式会社日立ハイテクサイエンス | 複合荷電粒子ビーム装置及び薄片試料加工方法 |
JP6403200B2 (ja) * | 2014-12-03 | 2018-10-10 | 日本電子株式会社 | 成膜方法および集束イオンビーム装置 |
EP3101406B1 (fr) * | 2015-06-05 | 2022-12-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Procédé de préparation d'un échantillon pour le diagnostic de microstructure et échantillon pour le diagnostic de microstructure |
JP6931214B2 (ja) * | 2017-01-19 | 2021-09-01 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
JP6928943B2 (ja) * | 2017-03-28 | 2021-09-01 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
JP7031859B2 (ja) * | 2018-02-20 | 2022-03-08 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、試料加工観察方法 |
DE102021201686A1 (de) * | 2020-11-17 | 2022-05-19 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtung zum Präparieren einer mikroskopischen Probe aus einer Volumenprobe |
DE102021112503A1 (de) * | 2021-05-12 | 2022-11-17 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlvorrichtung mit einer Ablenkeinheit |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6290842A (ja) * | 1985-10-15 | 1987-04-25 | Mitsubishi Electric Corp | 集束イオンビ−ム照射装置 |
JPH07296756A (ja) * | 1994-04-22 | 1995-11-10 | Hitachi Ltd | 微細加工方法およびその装置 |
JPH07312190A (ja) * | 1994-05-17 | 1995-11-28 | Hitachi Ltd | 電界電離型イオン源 |
JPH10223574A (ja) * | 1997-02-12 | 1998-08-21 | Hitachi Ltd | 加工観察装置 |
JPH10269981A (ja) * | 1997-03-27 | 1998-10-09 | Ricoh Co Ltd | 電子/イオンビーム照射装置,該電子/イオンビーム照射装置を備える走査型電子顕微鏡,及び該電子/イオンビーム照射装置を備えるfib装置 |
JP2008053002A (ja) * | 2006-08-23 | 2008-03-06 | Sii Nanotechnology Inc | 荷電粒子ビーム装置及びアパーチャの軸調整方法 |
JP2008053003A (ja) * | 2006-08-23 | 2008-03-06 | Sii Nanotechnology Inc | 集束イオンビーム装置及び試料の加工方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5151990A (fr) * | 1974-11-01 | 1976-05-07 | Hitachi Ltd | |
JPS58106750A (ja) * | 1981-12-18 | 1983-06-25 | Toshiba Corp | フオ−カスイオンビ−ム加工方法 |
JPS6056342A (ja) * | 1983-09-08 | 1985-04-01 | Anelva Corp | イオンビ−ム発生装置 |
US4874460A (en) * | 1987-11-16 | 1989-10-17 | Seiko Instruments Inc. | Method and apparatus for modifying patterned film |
JPH0262039A (ja) * | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
JP2811073B2 (ja) * | 1988-11-01 | 1998-10-15 | セイコーインスツルメンツ株式会社 | 断面加工観察装置 |
JPH0463433A (ja) * | 1990-07-02 | 1992-02-28 | Mitsubishi Electric Corp | 半導体素子の配線装置およびそれを用いた配線方法 |
JP3119959B2 (ja) * | 1993-02-05 | 2000-12-25 | セイコーインスツルメンツ株式会社 | 集束イオンビーム装置および加工観察装置 |
US5504340A (en) * | 1993-03-10 | 1996-04-02 | Hitachi, Ltd. | Process method and apparatus using focused ion beam generating means |
US5825035A (en) * | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
JP3101130B2 (ja) * | 1993-07-19 | 2000-10-23 | 日本電子株式会社 | 複合荷電粒子ビーム装置 |
JP2827959B2 (ja) * | 1995-04-05 | 1998-11-25 | ソニー株式会社 | 集束イオンビーム装置とパターン形成方法 |
US6039000A (en) * | 1998-02-11 | 2000-03-21 | Micrion Corporation | Focused particle beam systems and methods using a tilt column |
JP3897271B2 (ja) * | 1999-09-17 | 2007-03-22 | 株式会社日立製作所 | 加工観察装置及び試料加工方法 |
JP3597761B2 (ja) * | 2000-07-18 | 2004-12-08 | 株式会社日立製作所 | イオンビーム装置及び試料加工方法 |
JP2004087174A (ja) * | 2002-08-23 | 2004-03-18 | Seiko Instruments Inc | イオンビーム装置およびイオンビーム加工方法 |
JP4644470B2 (ja) * | 2004-11-10 | 2011-03-02 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置および試料作製方法 |
JP5078232B2 (ja) * | 2005-04-26 | 2012-11-21 | エスアイアイ・ナノテクノロジー株式会社 | 複合荷電粒子ビーム装置及びそれにおける照射位置決め方法 |
JP4878135B2 (ja) * | 2005-08-31 | 2012-02-15 | エスアイアイ・ナノテクノロジー株式会社 | 荷電粒子ビーム装置及び試料加工方法 |
WO2007067296A2 (fr) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Sources d'ions, systemes et procedes associes |
JP2007164992A (ja) * | 2005-12-09 | 2007-06-28 | Sii Nanotechnology Inc | 複合荷電粒子ビーム装置 |
-
2008
- 2008-08-06 JP JP2009526475A patent/JPWO2009020150A1/ja active Pending
- 2008-08-06 US US12/733,089 patent/US8269194B2/en active Active
- 2008-08-06 WO PCT/JP2008/064122 patent/WO2009020150A1/fr active Application Filing
- 2008-08-07 TW TW097130070A patent/TWI442440B/zh active
-
2013
- 2013-06-12 JP JP2013123876A patent/JP5775903B2/ja active Active
-
2015
- 2015-07-02 JP JP2015133559A patent/JP6118846B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6290842A (ja) * | 1985-10-15 | 1987-04-25 | Mitsubishi Electric Corp | 集束イオンビ−ム照射装置 |
JPH07296756A (ja) * | 1994-04-22 | 1995-11-10 | Hitachi Ltd | 微細加工方法およびその装置 |
JPH07312190A (ja) * | 1994-05-17 | 1995-11-28 | Hitachi Ltd | 電界電離型イオン源 |
JPH10223574A (ja) * | 1997-02-12 | 1998-08-21 | Hitachi Ltd | 加工観察装置 |
JPH10269981A (ja) * | 1997-03-27 | 1998-10-09 | Ricoh Co Ltd | 電子/イオンビーム照射装置,該電子/イオンビーム照射装置を備える走査型電子顕微鏡,及び該電子/イオンビーム照射装置を備えるfib装置 |
JP2008053002A (ja) * | 2006-08-23 | 2008-03-06 | Sii Nanotechnology Inc | 荷電粒子ビーム装置及びアパーチャの軸調整方法 |
JP2008053003A (ja) * | 2006-08-23 | 2008-03-06 | Sii Nanotechnology Inc | 集束イオンビーム装置及び試料の加工方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010251633A (ja) * | 2009-04-20 | 2010-11-04 | Fujikura Ltd | 酸化亜鉛基板の表面処理方法及び酸化亜鉛結晶の製造方法 |
JP2011210492A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 集束イオンビーム装置 |
US8822945B2 (en) | 2010-03-29 | 2014-09-02 | Sii Nanotechnology Inc. | Focused ion beam apparatus |
TWI813760B (zh) * | 2018-10-18 | 2023-09-01 | 日商日立高新技術科學股份有限公司 | 試料加工觀察方法 |
WO2021053704A1 (fr) * | 2019-09-17 | 2021-03-25 | 株式会社日立ハイテク | Dispositif à faisceau ionique |
JPWO2021053704A1 (fr) * | 2019-09-17 | 2021-03-25 | ||
JP7221405B2 (ja) | 2019-09-17 | 2023-02-13 | 株式会社日立ハイテク | イオンビーム装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6118846B2 (ja) | 2017-04-19 |
JP2013211280A (ja) | 2013-10-10 |
JP2016001606A (ja) | 2016-01-07 |
TWI442440B (zh) | 2014-06-21 |
US8269194B2 (en) | 2012-09-18 |
TW200926245A (en) | 2009-06-16 |
JPWO2009020150A1 (ja) | 2010-11-04 |
US20100176296A1 (en) | 2010-07-15 |
JP5775903B2 (ja) | 2015-09-09 |
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