WO2009089499A3 - Système à faisceaux multiples - Google Patents
Système à faisceaux multiples Download PDFInfo
- Publication number
- WO2009089499A3 WO2009089499A3 PCT/US2009/030671 US2009030671W WO2009089499A3 WO 2009089499 A3 WO2009089499 A3 WO 2009089499A3 US 2009030671 W US2009030671 W US 2009030671W WO 2009089499 A3 WO2009089499 A3 WO 2009089499A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sample
- multibeam system
- beam column
- produces
- column
- Prior art date
Links
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0279—Ionlithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
- H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination and light collection take place in the same area of the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Système à faisceaux multiples dans lequel un faisceau de particules chargé et un ou plusieurs faisceaux supplémentaires peuvent être dirigés sur la cible dans une chambre à vide unique. Une première colonne de faisceau produit de préférence un faisceau pour traitement rapide, et une deuxième colonne de faisceau produit un faisceau pour traitement plus précis. Une troisième colonne de faisceau peut être utilisée pour produire un faisceau utile pour la formation d'une image de l'échantillon tout en produisant peu ou pas de modification dans l'échantillon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/812,221 US20110163068A1 (en) | 2008-01-09 | 2009-01-09 | Multibeam System |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2010208P | 2008-01-09 | 2008-01-09 | |
US61/020,102 | 2008-01-09 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2009089499A2 WO2009089499A2 (fr) | 2009-07-16 |
WO2009089499A3 true WO2009089499A3 (fr) | 2009-10-08 |
WO2009089499A4 WO2009089499A4 (fr) | 2009-12-03 |
Family
ID=40853782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/030671 WO2009089499A2 (fr) | 2008-01-09 | 2009-01-09 | Système à faisceaux multiples |
Country Status (2)
Country | Link |
---|---|
US (1) | US20110163068A1 (fr) |
WO (1) | WO2009089499A2 (fr) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1501115B1 (fr) | 2003-07-14 | 2009-07-01 | FEI Company | Système à deux faisceaux |
US10493559B2 (en) | 2008-07-09 | 2019-12-03 | Fei Company | Method and apparatus for laser machining |
US8168961B2 (en) | 2008-11-26 | 2012-05-01 | Fei Company | Charged particle beam masking for laser ablation micromachining |
EP2233907A1 (fr) * | 2009-03-27 | 2010-09-29 | FEI Company | Formation d'une image pendant le fraisage d'une pièce de travail |
JP5702552B2 (ja) * | 2009-05-28 | 2015-04-15 | エフ イー アイ カンパニFei Company | デュアルビームシステムの制御方法 |
US8524139B2 (en) | 2009-08-10 | 2013-09-03 | FEI Compay | Gas-assisted laser ablation |
US8253118B2 (en) | 2009-10-14 | 2012-08-28 | Fei Company | Charged particle beam system having multiple user-selectable operating modes |
EP2341525B1 (fr) | 2009-12-30 | 2013-10-23 | FEI Company | Source de plasma pour système de faisceau à particules chargées |
US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
CN102812533B (zh) * | 2010-04-07 | 2015-12-02 | Fei公司 | 组合激光器和带电粒子束*** |
DE102010024625A1 (de) * | 2010-06-22 | 2011-12-22 | Carl Zeiss Nts Gmbh | Verfahren zum Bearbeiten eines Objekts |
US10112257B1 (en) * | 2010-07-09 | 2018-10-30 | General Lasertronics Corporation | Coating ablating apparatus with coating removal detection |
US8211717B1 (en) * | 2011-01-26 | 2012-07-03 | International Business Machines Corporation | SEM repair for sub-optimal features |
EP2492950B1 (fr) | 2011-02-25 | 2018-04-11 | FEI Company | Procédé de commutation rapide entre un mode à courant élevé et un mode à faible courant dans un système à faisceau de particules chargées |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
JP2013101929A (ja) | 2011-11-07 | 2013-05-23 | Fei Co | 荷電粒子ビーム・システムの絞り |
DE102012202519A1 (de) * | 2012-02-17 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht |
US9895771B2 (en) | 2012-02-28 | 2018-02-20 | General Lasertronics Corporation | Laser ablation for the environmentally beneficial removal of surface coatings |
US9216475B2 (en) | 2012-03-31 | 2015-12-22 | Fei Company | System for protecting light optical components during laser ablation |
US9733164B2 (en) | 2012-06-11 | 2017-08-15 | Fei Company | Lamella creation method and device using fixed-angle beam and rotating sample stage |
US8759764B2 (en) | 2012-06-29 | 2014-06-24 | Fei Company | On-axis detector for charged particle beam system |
US8766213B2 (en) | 2012-09-07 | 2014-07-01 | Fei Company | Automated method for coincident alignment of a laser beam and a charged particle beam |
US9655223B2 (en) * | 2012-09-14 | 2017-05-16 | Oregon Physics, Llc | RF system, magnetic filter, and high voltage isolation for an inductively coupled plasma ion source |
US8884247B2 (en) | 2012-09-25 | 2014-11-11 | Fei Company | System and method for ex situ analysis of a substrate |
US9991090B2 (en) | 2012-11-15 | 2018-06-05 | Fei Company | Dual laser beam system used with an electron microscope and FIB |
EP2924710A1 (fr) * | 2014-03-25 | 2015-09-30 | Fei Company | Imagerie d'un échantillon à l'aide de faisceaux multiples et un seul détecteur |
US20160032281A1 (en) * | 2014-07-31 | 2016-02-04 | Fei Company | Functionalized grids for locating and imaging biological specimens and methods of using the same |
KR102257901B1 (ko) * | 2014-09-19 | 2021-05-31 | 삼성전자주식회사 | 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법 |
JP6967340B2 (ja) | 2016-09-13 | 2021-11-17 | 株式会社日立ハイテクサイエンス | 複合ビーム装置 |
JP2018152183A (ja) * | 2017-03-10 | 2018-09-27 | 株式会社日立製作所 | 微細構造体の製造方法および製造装置 |
US10361064B1 (en) * | 2018-02-28 | 2019-07-23 | National Electrostatics Corp. | Beam combiner |
CN108511309A (zh) * | 2018-05-28 | 2018-09-07 | 河南太粒科技有限公司 | 一种激光离子源装置 |
KR102374612B1 (ko) * | 2019-08-22 | 2022-03-15 | 삼성디스플레이 주식회사 | 레이저 장치 및 레이저 가공 방법 |
WO2021152726A1 (fr) * | 2020-01-29 | 2021-08-05 | 株式会社日立ハイテク | Dispositif de gravure ionique |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06260129A (ja) * | 1993-03-02 | 1994-09-16 | Seiko Instr Inc | 集束イオンビーム装置 |
JPH06318443A (ja) * | 1994-03-31 | 1994-11-15 | Hitachi Ltd | イオンビーム装置 |
JPH09205079A (ja) * | 1996-01-26 | 1997-08-05 | Hitachi Ltd | 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置 |
JPH09257670A (ja) * | 1996-03-19 | 1997-10-03 | Hitachi Ltd | 電子顕微鏡用試料作製装置 |
Family Cites Families (30)
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US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
US3571642A (en) * | 1968-01-17 | 1971-03-23 | Ca Atomic Energy Ltd | Method and apparatus for interleaved charged particle acceleration |
BE760067A (fr) * | 1969-12-09 | 1971-06-09 | Applied Display Services | Procede et appareil pour la fabrication de plaques en relief ainsi que plaques pour impression ainsi obtenues |
US4179312A (en) * | 1977-12-08 | 1979-12-18 | International Business Machines Corporation | Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition |
FR2575597B1 (fr) * | 1984-12-28 | 1987-03-20 | Onera (Off Nat Aerospatiale) | Appareil pour la micro-analyse ionique a tres haute resolution d'un echantillon solide |
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EP0731490A3 (fr) * | 1995-03-02 | 1998-03-11 | Ebara Corporation | Procédé de microfabrication ultra-fine utilisant un faisceau d'énergie |
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US6252227B1 (en) * | 1998-10-19 | 2001-06-26 | Taiwan Semiconductor Manufacturing Company | Method for sectioning a semiconductor wafer with FIB for viewing with SEM |
US6727500B1 (en) * | 2000-02-25 | 2004-04-27 | Fei Company | System for imaging a cross-section of a substrate |
US6346352B1 (en) * | 2000-02-25 | 2002-02-12 | International Business Machines Corporation | Quartz defect removal utilizing gallium staining and femtosecond ablation |
US6768120B2 (en) * | 2001-08-31 | 2004-07-27 | The Regents Of The University Of California | Focused electron and ion beam systems |
JP3683851B2 (ja) * | 2001-11-29 | 2005-08-17 | 哲也 牧村 | 光パターニングにより無機透明材料を加工する光加工装置及び光加工方法 |
EP1388883B1 (fr) * | 2002-08-07 | 2013-06-05 | Fei Company | Colonne coaxiale FIB-SEM |
US7504182B2 (en) * | 2002-09-18 | 2009-03-17 | Fei Company | Photolithography mask repair |
JP3887356B2 (ja) * | 2003-07-08 | 2007-02-28 | エスアイアイ・ナノテクノロジー株式会社 | 薄片試料作製方法 |
EP1501115B1 (fr) * | 2003-07-14 | 2009-07-01 | FEI Company | Système à deux faisceaux |
US7241361B2 (en) * | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
GB2414111B (en) * | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
US7332729B1 (en) * | 2004-06-18 | 2008-02-19 | Novelx, Inc. | System and method for multiple electron, ion, and photon beam alignment |
EP1630849B1 (fr) * | 2004-08-27 | 2011-11-02 | Fei Company | Traitement localisé par plasma |
JP5033314B2 (ja) * | 2004-09-29 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び加工方法 |
US7893384B2 (en) * | 2004-12-07 | 2011-02-22 | Chosen Technologies, Inc. | Systems and methods for laser material manipulation |
JP4878135B2 (ja) * | 2005-08-31 | 2012-02-15 | エスアイアイ・ナノテクノロジー株式会社 | 荷電粒子ビーム装置及び試料加工方法 |
JP5099291B2 (ja) * | 2006-02-14 | 2012-12-19 | エスアイアイ・ナノテクノロジー株式会社 | 集束イオンビーム装置及び試料の断面加工・観察方法 |
EP2041756B1 (fr) * | 2006-07-14 | 2015-05-13 | FEI Company | Système de faisceau ionique focalisé à plasma multisource |
US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
-
2009
- 2009-01-09 US US12/812,221 patent/US20110163068A1/en not_active Abandoned
- 2009-01-09 WO PCT/US2009/030671 patent/WO2009089499A2/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06260129A (ja) * | 1993-03-02 | 1994-09-16 | Seiko Instr Inc | 集束イオンビーム装置 |
JPH06318443A (ja) * | 1994-03-31 | 1994-11-15 | Hitachi Ltd | イオンビーム装置 |
JPH09205079A (ja) * | 1996-01-26 | 1997-08-05 | Hitachi Ltd | 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置 |
JPH09257670A (ja) * | 1996-03-19 | 1997-10-03 | Hitachi Ltd | 電子顕微鏡用試料作製装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2009089499A4 (fr) | 2009-12-03 |
US20110163068A1 (en) | 2011-07-07 |
WO2009089499A2 (fr) | 2009-07-16 |
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