WO2009008399A1 - 電子源 - Google Patents

電子源 Download PDF

Info

Publication number
WO2009008399A1
WO2009008399A1 PCT/JP2008/062264 JP2008062264W WO2009008399A1 WO 2009008399 A1 WO2009008399 A1 WO 2009008399A1 JP 2008062264 W JP2008062264 W JP 2008062264W WO 2009008399 A1 WO2009008399 A1 WO 2009008399A1
Authority
WO
WIPO (PCT)
Prior art keywords
exciter
electron source
active layer
free
type semiconductor
Prior art date
Application number
PCT/JP2008/062264
Other languages
English (en)
French (fr)
Inventor
Daisuke Takeuchi
Toshiharu Makino
Satoshi Yamasaki
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Publication of WO2009008399A1 publication Critical patent/WO2009008399A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/308—Semiconductor cathodes, e.g. having PN junction layers

Abstract

　励起子を応用しながら室温動作する、高電圧不要かつ低真空動作可能な、高効率・連続高出力の電子源を提供する。 電子源は、励起子の束縛エネルギーが高い半導体材料で構成される間接遷移型半導体であって、間接遷移型半導体による活性層（５）を形成し、活性層（５）に電流注入する電極（８）を有し、自由励起子生成効率が１０％以上であり、その活性層（５）あるいは活性領域に形成した負の電子親和力表面（７）で自由励起子を自由電子に変換し連続放出させる。
PCT/JP2008/062264 2007-07-06 2008-07-07 電子源 WO2009008399A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-178510 2007-07-06
JP2007178510A JP5083874B2 (ja) 2007-07-06 2007-07-06 電子源

Publications (1)

Publication Number Publication Date
WO2009008399A1 true WO2009008399A1 (ja) 2009-01-15

Family

ID=40228569

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062264 WO2009008399A1 (ja) 2007-07-06 2008-07-07 電子源

Country Status (2)

Country Link
JP (1) JP5083874B2 (ja)
WO (1) WO2009008399A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4160940A1 (en) 2011-06-13 2023-04-05 Wi-Charge Ltd. Spatially distributed laser resonator

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5354598B2 (ja) * 2009-12-17 2013-11-27 独立行政法人産業技術総合研究所 電子源
JP2012198196A (ja) * 2011-03-10 2012-10-18 Yokogawa Electric Corp 半導体装置、歪ゲージ、圧力センサおよび半導体装置の製造方法
JP5640893B2 (ja) * 2011-05-26 2014-12-17 株式会社デンソー 熱電子発電素子
US10607806B2 (en) * 2017-10-10 2020-03-31 Kla-Tencor Corporation Silicon electron emitter designs

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713647A (en) * 1980-06-02 1982-01-23 Ibm Electron emitting unit
WO1993015522A1 (en) * 1992-01-22 1993-08-05 Massachusetts Institute Of Technology Diamond cold cathode
JPH06187902A (ja) * 1992-12-21 1994-07-08 Canon Inc 半導体電子放出素子
JP2000260301A (ja) * 1999-03-06 2000-09-22 Smiths Ind Plc 電子放出装置及びその製造方法
JP2006134723A (ja) * 2004-11-05 2006-05-25 National Institute For Materials Science ダイヤモンドエミッタアレイ及びその製造方法
WO2006135093A1 (ja) * 2005-06-17 2006-12-21 Sumitomo Electric Industries, Ltd. ダイヤモンド電子放射陰極、電子放射源、電子顕微鏡及び電子ビーム露光機

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713647A (en) * 1980-06-02 1982-01-23 Ibm Electron emitting unit
WO1993015522A1 (en) * 1992-01-22 1993-08-05 Massachusetts Institute Of Technology Diamond cold cathode
JPH06187902A (ja) * 1992-12-21 1994-07-08 Canon Inc 半導体電子放出素子
JP2000260301A (ja) * 1999-03-06 2000-09-22 Smiths Ind Plc 電子放出装置及びその製造方法
JP2006134723A (ja) * 2004-11-05 2006-05-25 National Institute For Materials Science ダイヤモンドエミッタアレイ及びその製造方法
WO2006135093A1 (ja) * 2005-06-17 2006-12-21 Sumitomo Electric Industries, Ltd. ダイヤモンド電子放射陰極、電子放射源、電子顕微鏡及び電子ビーム露光機
WO2006135092A1 (ja) * 2005-06-17 2006-12-21 Sumitomo Electric Industries, Ltd. ダイヤモンド電子放射陰極、電子放射源、電子顕微鏡及び電子ビーム露光機

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4160940A1 (en) 2011-06-13 2023-04-05 Wi-Charge Ltd. Spatially distributed laser resonator

Also Published As

Publication number Publication date
JP2009016252A (ja) 2009-01-22
JP5083874B2 (ja) 2012-11-28

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