WO2008152801A1 - 検査装置、検査方法およびプログラム - Google Patents

検査装置、検査方法およびプログラム Download PDF

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Publication number
WO2008152801A1
WO2008152801A1 PCT/JP2008/001481 JP2008001481W WO2008152801A1 WO 2008152801 A1 WO2008152801 A1 WO 2008152801A1 JP 2008001481 W JP2008001481 W JP 2008001481W WO 2008152801 A1 WO2008152801 A1 WO 2008152801A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical system
polarizer
objective lens
sample
fourier image
Prior art date
Application number
PCT/JP2008/001481
Other languages
English (en)
French (fr)
Inventor
Toru Yoshikawa
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009519159A priority Critical patent/JP5083315B2/ja
Priority to CN2008800194917A priority patent/CN101680848B/zh
Publication of WO2008152801A1 publication Critical patent/WO2008152801A1/ja
Priority to US12/591,744 priority patent/US8040512B2/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Analysis (AREA)

Abstract

　検査装置は、表面にパターンが形成された試料を載置するためのステージと、パターンを観察するための対物レンズと、照明光学系と、検出光学系と、撮像部と、解析部とを備える。照明光学系は、光源および偏光子を含む。そして、照明光学系は、光源からの任意の波長域を選択するとともに、偏光子および対物レンズを介して試料を落射照明する。検出光学系は、偏光子の偏光方向に対して偏光面が交差する検光子を含む。そして、検出光学系は、対物レンズおよび検光子を介して試料からの光を検出するとともに、該光に基づいて試料表面のフーリエ画像を取得する。撮像部は、フーリエ画像を撮像する。解析部は、フーリエ画像のうちでパターンの状態の影響を他の領域よりも大きく受ける注目領域を求めるための演算処理を行う。
PCT/JP2008/001481 2007-06-13 2008-06-10 検査装置、検査方法およびプログラム WO2008152801A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009519159A JP5083315B2 (ja) 2007-06-13 2008-06-10 検査装置、検査方法およびプログラム
CN2008800194917A CN101680848B (zh) 2007-06-13 2008-06-10 检查装置和检查方法
US12/591,744 US8040512B2 (en) 2007-06-13 2009-11-30 Inspection device, inspection method, and program

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007156443 2007-06-13
JP2007-156443 2007-06-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/591,744 Continuation US8040512B2 (en) 2007-06-13 2009-11-30 Inspection device, inspection method, and program

Publications (1)

Publication Number Publication Date
WO2008152801A1 true WO2008152801A1 (ja) 2008-12-18

Family

ID=40129415

Family Applications (1)

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PCT/JP2008/001481 WO2008152801A1 (ja) 2007-06-13 2008-06-10 検査装置、検査方法およびプログラム

Country Status (6)

Country Link
US (1) US8040512B2 (ja)
JP (1) JP5083315B2 (ja)
KR (1) KR101467010B1 (ja)
CN (1) CN101680848B (ja)
TW (1) TWI436051B (ja)
WO (1) WO2008152801A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009125839A1 (ja) * 2008-04-11 2009-10-15 株式会社ニコン 検査装置
JP2011099822A (ja) * 2009-11-09 2011-05-19 Nikon Corp 表面検査方法および表面検査装置
JP2013502562A (ja) * 2009-08-17 2013-01-24 ナンダ テクノロジーズ ゲーエムベーハー 半導体ウェハの検査及び処理方法
JP2014055789A (ja) * 2012-09-11 2014-03-27 Nuflare Technology Inc パターン評価方法およびパターン評価装置
JP2017211392A (ja) * 2017-07-11 2017-11-30 株式会社ニューフレアテクノロジー パターン評価方法およびパターン評価装置
US10211027B2 (en) 2016-08-03 2019-02-19 Nuflare Technology, Inc. Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus

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JP6016463B2 (ja) * 2012-06-07 2016-10-26 キヤノン株式会社 デフォーカス量推定方法、撮像装置、および透光性部材
US9497379B2 (en) 2013-08-22 2016-11-15 California Institute Of Technology Variable-illumination fourier ptychographic imaging devices, systems, and methods
US9864184B2 (en) 2012-10-30 2018-01-09 California Institute Of Technology Embedded pupil function recovery for fourier ptychographic imaging devices
US10652444B2 (en) 2012-10-30 2020-05-12 California Institute Of Technology Multiplexed Fourier ptychography imaging systems and methods
EP2915180B1 (en) 2012-10-30 2018-12-05 California Institute of Technology Fourier ptychographic imaging systems, devices, and methods
TWI477766B (zh) 2012-12-18 2015-03-21 Ind Tech Res Inst 檢測裝置以及檢測方法
AU2014296034A1 (en) 2013-07-31 2016-02-18 California Institute Of Technology Aperture scanning Fourier ptychographic imaging
US11468557B2 (en) 2014-03-13 2022-10-11 California Institute Of Technology Free orientation fourier camera
KR101504554B1 (ko) * 2014-04-01 2015-03-20 한국기술교육대학교 산학협력단 광학측정장치 및 이를 이용한 측정방법
CN104101601B (zh) * 2014-06-23 2016-10-05 大族激光科技产业集团股份有限公司 表面缺陷检测装置及方法
JP6415281B2 (ja) * 2014-12-05 2018-10-31 東京エレクトロン株式会社 プローブ装置及びプローブ方法
US10718934B2 (en) 2014-12-22 2020-07-21 California Institute Of Technology Epi-illumination Fourier ptychographic imaging for thick samples
CA2970063A1 (en) 2015-01-21 2016-07-28 California Institute Of Technology Fourier ptychographic tomography
CN107209123B (zh) 2015-01-26 2020-08-11 加州理工学院 多孔傅立叶重叠关联和荧光成像
CN107407799B (zh) 2015-03-13 2020-09-18 加州理工学院 使用傅里叶叠层成像技术校正不相干成像***中的像差
JP6632327B2 (ja) * 2015-10-30 2020-01-22 浜松ホトニクス株式会社 画像生成方法、画像生成装置、画像生成プログラム及び記録媒体
US11092795B2 (en) 2016-06-10 2021-08-17 California Institute Of Technology Systems and methods for coded-aperture-based correction of aberration obtained from Fourier ptychography
US10568507B2 (en) 2016-06-10 2020-02-25 California Institute Of Technology Pupil ptychography methods and systems
KR102592917B1 (ko) * 2016-08-26 2023-10-23 삼성전자주식회사 표면 검사 방법 및 반도체 소자의 제조 방법
US10140400B2 (en) * 2017-01-30 2018-11-27 Dongfang Jingyuan Electron Limited Method and system for defect prediction of integrated circuits
CN109425618B (zh) * 2017-08-31 2021-12-28 深圳中科飞测科技股份有限公司 光学测量***及方法
KR102048240B1 (ko) * 2017-09-06 2019-11-25 주식회사 씨티아이랩 데이터 이미지화를 이용한 딥러닝 기반 시스템 이상행위 분석 기술
US10754140B2 (en) 2017-11-03 2020-08-25 California Institute Of Technology Parallel imaging acquisition and restoration methods and systems
CN108332659A (zh) * 2018-01-25 2018-07-27 深圳市华星光电半导体显示技术有限公司 一种检测氧化铟锡薄膜关键尺寸的装置
CN110943002B (zh) * 2019-11-18 2022-06-17 錼创显示科技股份有限公司 晶圆、晶圆检测***与晶圆检测方法
US11935244B2 (en) * 2020-10-29 2024-03-19 Changxin Memory Technologies, Inc. Method and apparatus for improving sensitivity of wafer detection, and storage medium
KR102463020B1 (ko) * 2020-12-18 2022-11-03 주식회사 포스코 점상부식 결함 평가장치 및 평가방법

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JPH02189448A (ja) * 1989-01-17 1990-07-25 Mitsubishi Electric Corp 半導体の表面保護膜欠陥検出方法
JP2000155099A (ja) * 1998-09-18 2000-06-06 Hitachi Ltd 試料表面の観察方法及びその装置並びに欠陥検査方法及びその装置
JP2005233869A (ja) * 2004-02-23 2005-09-02 Raitoron Kk 微細構造検査装置及び微細構造検査方法
WO2008015973A1 (fr) * 2006-08-02 2008-02-07 Nikon Corporation Appareil de détection de défauts et procédé de détection de défauts

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US6690469B1 (en) 1998-09-18 2004-02-10 Hitachi, Ltd. Method and apparatus for observing and inspecting defects
JP4090775B2 (ja) 2002-04-05 2008-05-28 日本特殊陶業株式会社 電子回路用部品の外観検査方法及び外観検査装置並びに電子回路用部品の製造方法
JP4901090B2 (ja) * 2004-10-06 2012-03-21 株式会社ニコン 欠陥検査方法及び欠陥検出装置
JP5068422B2 (ja) * 2004-10-05 2012-11-07 株式会社日立ハイテクノロジーズ 微細構造観察方法および欠陥検査装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02189448A (ja) * 1989-01-17 1990-07-25 Mitsubishi Electric Corp 半導体の表面保護膜欠陥検出方法
JP2000155099A (ja) * 1998-09-18 2000-06-06 Hitachi Ltd 試料表面の観察方法及びその装置並びに欠陥検査方法及びその装置
JP2005233869A (ja) * 2004-02-23 2005-09-02 Raitoron Kk 微細構造検査装置及び微細構造検査方法
WO2008015973A1 (fr) * 2006-08-02 2008-02-07 Nikon Corporation Appareil de détection de défauts et procédé de détection de défauts

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009125839A1 (ja) * 2008-04-11 2009-10-15 株式会社ニコン 検査装置
JP2013502562A (ja) * 2009-08-17 2013-01-24 ナンダ テクノロジーズ ゲーエムベーハー 半導体ウェハの検査及び処理方法
US8778702B2 (en) 2009-08-17 2014-07-15 Nanda Technologies Gmbh Method of inspecting and processing semiconductor wafers
JP2011099822A (ja) * 2009-11-09 2011-05-19 Nikon Corp 表面検査方法および表面検査装置
JP2014055789A (ja) * 2012-09-11 2014-03-27 Nuflare Technology Inc パターン評価方法およびパターン評価装置
US10211027B2 (en) 2016-08-03 2019-02-19 Nuflare Technology, Inc. Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus
JP2017211392A (ja) * 2017-07-11 2017-11-30 株式会社ニューフレアテクノロジー パターン評価方法およびパターン評価装置

Also Published As

Publication number Publication date
US20100079758A1 (en) 2010-04-01
US8040512B2 (en) 2011-10-18
JP5083315B2 (ja) 2012-11-28
KR20100029781A (ko) 2010-03-17
CN101680848A (zh) 2010-03-24
TW200912287A (en) 2009-03-16
TWI436051B (zh) 2014-05-01
CN101680848B (zh) 2011-11-23
KR101467010B1 (ko) 2014-12-01
JPWO2008152801A1 (ja) 2010-08-26

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