WO2008143187A1 - 半導体デバイス用基板洗浄液、及び半導体デバイス用基板の製造方法 - Google Patents

半導体デバイス用基板洗浄液、及び半導体デバイス用基板の製造方法 Download PDF

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Publication number
WO2008143187A1
WO2008143187A1 PCT/JP2008/059072 JP2008059072W WO2008143187A1 WO 2008143187 A1 WO2008143187 A1 WO 2008143187A1 JP 2008059072 W JP2008059072 W JP 2008059072W WO 2008143187 A1 WO2008143187 A1 WO 2008143187A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
cleaning solution
solution
cleaning
substrate
Prior art date
Application number
PCT/JP2008/059072
Other languages
English (en)
French (fr)
Inventor
Yasuhiro Kawase
Makoto Ikemoto
Atsushi Itou
Makoto Ishikawa
Original Assignee
Mitsubishi Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corporation filed Critical Mitsubishi Chemical Corporation
Priority to CN2008800155081A priority Critical patent/CN101681824B/zh
Priority to US12/600,545 priority patent/US8110534B2/en
Publication of WO2008143187A1 publication Critical patent/WO2008143187A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Emergency Medicine (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Liquid Crystal (AREA)

Abstract

　基板表面に付着したパーティクルや有機物の汚染、金属汚染及び有機物と金属による複合汚染の除去性と再付着防止性に優れ、基板表面を腐食することなく、高度に清浄化することができる半導体デバイス用基板洗浄液を提供する。特に、疎水性のため薬液をはじき易く、パーティクル除去性が悪い低誘電率（Ｌｏｗ－ｋ）材料の洗浄性に優れた洗浄液を提供する。 　（Ａ）有機酸及び（Ｂ）ＨＬＢ値が５以上１３未満の非イオン型界面活性剤を含有することを特徴とする半導体デバイス用基板洗浄液。
PCT/JP2008/059072 2007-05-18 2008-05-16 半導体デバイス用基板洗浄液、及び半導体デバイス用基板の製造方法 WO2008143187A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800155081A CN101681824B (zh) 2007-05-18 2008-05-16 半导体器件用基板清洗液以及半导体器件用基板的制造方法
US12/600,545 US8110534B2 (en) 2007-05-18 2008-05-16 Cleaning solution for substrate for semiconductor device and process for producing substrate for semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007133083 2007-05-18
JP2007-133083 2007-05-18

Publications (1)

Publication Number Publication Date
WO2008143187A1 true WO2008143187A1 (ja) 2008-11-27

Family

ID=40031888

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059072 WO2008143187A1 (ja) 2007-05-18 2008-05-16 半導体デバイス用基板洗浄液、及び半導体デバイス用基板の製造方法

Country Status (6)

Country Link
US (1) US8110534B2 (ja)
JP (1) JP5428200B2 (ja)
KR (1) KR101097073B1 (ja)
CN (1) CN101681824B (ja)
TW (1) TWI449091B (ja)
WO (1) WO2008143187A1 (ja)

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CN102449745A (zh) * 2009-04-30 2012-05-09 狮王株式会社 半导体用基板的清洗方法以及酸性溶液

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JP2010226089A (ja) * 2009-01-14 2010-10-07 Rohm & Haas Electronic Materials Llc 半導体ウェハをクリーニングする方法
US8877640B2 (en) * 2010-07-06 2014-11-04 United Microelectronics Corporation Cleaning solution and damascene process using the same
CN101935160B (zh) * 2010-07-28 2011-11-30 东旭集团有限公司 显示器用平板玻璃工艺中使用的原配料湿润剂及制备方法
JP5948758B2 (ja) 2010-08-31 2016-07-06 三菱化学株式会社 半導体デバイス用基板洗浄液及び洗浄方法
DE112011103185T5 (de) * 2010-09-24 2013-07-18 Fujimi Incorporated Polierzusammensetzung und Spülzusammensetzung
JP5817139B2 (ja) 2011-02-18 2015-11-18 富士通株式会社 化合物半導体装置の製造方法及び洗浄剤
EP2688688A4 (en) * 2011-03-21 2014-12-31 Basf Se AQUEOUS CLEANING COMPOSITION WITHOUT NITROGEN, PREPARATION AND USE THEREOF
US8940104B2 (en) * 2011-08-02 2015-01-27 Brewer Science Inc. Cleaning composition for temporary wafer bonding materials
JP2013151677A (ja) * 2011-12-28 2013-08-08 Sanyo Chem Ind Ltd 電子材料用洗浄剤
KR101997950B1 (ko) 2012-02-17 2019-07-08 미쯔비시 케미컬 주식회사 반도체 디바이스용 세정액 및 반도체 디바이스용 기판의 세정 방법
JP2016125128A (ja) * 2015-01-08 2016-07-11 三浦工業株式会社 表面処理剤及び表面処理方法
KR102326028B1 (ko) * 2015-01-26 2021-11-16 삼성디스플레이 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
WO2017188296A1 (ja) * 2016-04-28 2017-11-02 富士フイルム株式会社 処理液及び処理液収容体
KR102051346B1 (ko) 2016-06-03 2019-12-03 후지필름 가부시키가이샤 처리액, 기판 세정 방법 및 레지스트의 제거 방법
TWI673357B (zh) 2016-12-14 2019-10-01 美商卡博特微電子公司 自化學機械平坦化基板移除殘留物之組合物及方法
CN109037025A (zh) * 2017-06-08 2018-12-18 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
JP7330668B2 (ja) * 2018-03-08 2023-08-22 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法および半導体基板の製造方法
KR101957876B1 (ko) * 2018-06-14 2019-03-13 영창케미칼 주식회사 극자외선 리소그래피용 공정액 조성물 및 이를 이용하는 패턴 형성 방법
WO2020096760A1 (en) * 2018-11-08 2020-05-14 Entegris, Inc. Post cmp cleaning composition
KR20210129049A (ko) * 2019-02-19 2021-10-27 미쯔비시 케미컬 주식회사 세륨 화합물 제거용 세정액, 세정 방법 및 반도체 웨이퍼의 제조 방법
KR20200114472A (ko) 2019-03-28 2020-10-07 동우 화인켐 주식회사 세정액 예비 조성물, 이를 포함하는 세정액 조성물 및 세정액 조성물의 제조방법
CN112255362A (zh) * 2020-07-28 2021-01-22 安徽富乐德科技发展股份有限公司 一种应用于半导体领域的石英罩离子污染的检测工艺
CN116325085A (zh) * 2020-08-28 2023-06-23 富士胶片电子材料美国有限公司 清洁组合物及其使用方法
CN112961740A (zh) * 2021-02-22 2021-06-15 上海赛夫特半导体材料有限公司 一种线路板镀铜用清洗剂及其制备方法
KR102518902B1 (ko) * 2021-06-17 2023-04-25 주식회사 케이씨텍 Cmp 후 세정액 조성물
CN115093903A (zh) * 2022-07-19 2022-09-23 广州天极电子科技股份有限公司 一种清洗剂及其应用、一种薄膜电路板基板的清洗方法及一种薄膜电路板的制备方法

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Publication number Priority date Publication date Assignee Title
CN102449745A (zh) * 2009-04-30 2012-05-09 狮王株式会社 半导体用基板的清洗方法以及酸性溶液

Also Published As

Publication number Publication date
US20100167972A1 (en) 2010-07-01
TW200903605A (en) 2009-01-16
CN101681824A (zh) 2010-03-24
JP5428200B2 (ja) 2014-02-26
TWI449091B (zh) 2014-08-11
CN101681824B (zh) 2012-05-30
US8110534B2 (en) 2012-02-07
KR20100016470A (ko) 2010-02-12
KR101097073B1 (ko) 2011-12-22
JP2009004759A (ja) 2009-01-08

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