WO2008136240A1 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
WO2008136240A1
WO2008136240A1 PCT/JP2008/056857 JP2008056857W WO2008136240A1 WO 2008136240 A1 WO2008136240 A1 WO 2008136240A1 JP 2008056857 W JP2008056857 W JP 2008056857W WO 2008136240 A1 WO2008136240 A1 WO 2008136240A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating film
interlayer insulating
protruding section
semiconductor device
polishing
Prior art date
Application number
PCT/JP2008/056857
Other languages
French (fr)
Japanese (ja)
Inventor
Noritaka Kamikubo
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008136240A1 publication Critical patent/WO2008136240A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Abstract

Provided is a planarizing method wherein defects on a surface to be polished are suppressed and the thickness of a film to be polished is controlled. A method for manufacturing a semiconductor device using such planarizing method is also provided. An interlayer insulating film (3) is formed on a semiconductor substrate (1) whereupon a semiconductor element (2) is formed. At this time, on the surface of the formed interlayer insulating film (3), a protruding section (4) having a height position higher than that of the periphery and a non-protruding section (5) having a height position lower than that of the protruding section (4) exist. To such interlayer insulating film (3), first polishing step is performed by using abrasive grains having non-Prestonian characteristics to planarize the protruding section (4). Then, second polishing step is performed to the surface of the interlayer insulating film (3) with a polishing pressure of 1.5 times or more. Thus, the number of defects remaining on the surface of the interlayer insulating film (3) after polishing can be suppressed, and furthermore, control of the thickness of the interlayer insulating film (3) desirably to be left is facilitated.
PCT/JP2008/056857 2007-04-27 2008-04-07 Method for manufacturing semiconductor device WO2008136240A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-118407 2007-04-27
JP2007118407A JP2008277495A (en) 2007-04-27 2007-04-27 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
WO2008136240A1 true WO2008136240A1 (en) 2008-11-13

Family

ID=39943357

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056857 WO2008136240A1 (en) 2007-04-27 2008-04-07 Method for manufacturing semiconductor device

Country Status (3)

Country Link
JP (1) JP2008277495A (en)
TW (1) TW200908120A (en)
WO (1) WO2008136240A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013031909A (en) * 2011-08-03 2013-02-14 Seiko Instruments Inc Method for polishing glass substrate, method for manufacturing package, piezoelectric vibrator, oscillator, electronic apparatus and radio-controlled timepiece
TWI820399B (en) * 2021-02-26 2023-11-01 國立臺灣科技大學 Wafer processing method and wafer processing system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359216A (en) * 2001-05-30 2002-12-13 Mitsubishi Electric Corp Polishing method using ceria slurry, and method of manufacturing semiconductor device
JP2006032846A (en) * 2004-07-21 2006-02-02 Sharp Corp Method for manufacturing semiconductor device using cmp
JP2006516067A (en) * 2002-11-13 2006-06-15 デュポン エアー プロダクツ ナノマテリアルズ エルエルシー Abrasive composition and polishing method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359216A (en) * 2001-05-30 2002-12-13 Mitsubishi Electric Corp Polishing method using ceria slurry, and method of manufacturing semiconductor device
JP2006516067A (en) * 2002-11-13 2006-06-15 デュポン エアー プロダクツ ナノマテリアルズ エルエルシー Abrasive composition and polishing method therefor
JP2006032846A (en) * 2004-07-21 2006-02-02 Sharp Corp Method for manufacturing semiconductor device using cmp

Also Published As

Publication number Publication date
TW200908120A (en) 2009-02-16
JP2008277495A (en) 2008-11-13

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