WO2008132799A1 - 計測方法、露光方法及びデバイス製造方法 - Google Patents

計測方法、露光方法及びデバイス製造方法 Download PDF

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Publication number
WO2008132799A1
WO2008132799A1 PCT/JP2008/000953 JP2008000953W WO2008132799A1 WO 2008132799 A1 WO2008132799 A1 WO 2008132799A1 JP 2008000953 W JP2008000953 W JP 2008000953W WO 2008132799 A1 WO2008132799 A1 WO 2008132799A1
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WO
WIPO (PCT)
Prior art keywords
image
pattern
dai
wafer
optical system
Prior art date
Application number
PCT/JP2008/000953
Other languages
English (en)
French (fr)
Inventor
Kazuyuki Miyashita
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009511662A priority Critical patent/JPWO2008132799A1/ja
Publication of WO2008132799A1 publication Critical patent/WO2008132799A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

　計測装置の計測分解能を超える線幅（スペース幅Ａ）のＬ／Ｓパターンを含む開口パターン（ＡＰn）の像（潜像）を、光学系を介してウエハ上の各区画領域（ＤＡi）にそれぞれ生成する（ステップ４１０）。そして、開口パターン（ＡＰn）の像が生成されたウエハ上の各区画領域（ＤＡi）の一部を、投影光学系ＰＬを介してそれぞれ露光し、Ｌ／Ｓパターンの像の一部が除去されたパターン（ＡＰn）の像を各区画領域（ＤＡi）に形成する（ステップ４１２）。これにより、このウエハの現像後に、パターン（ＭＰn）の一部が除去されたパターンの像（レジスト像）が各区画領域（ＤＡi）に形成される。そして、そのウエハを試料として、簡易な計測装置で計測を行い、投影光学系ＰＬの光学特性（ベストフォーカス位置、像面湾曲、非点収差など）を求める（ステップ４２６）。これにより、簡易の計測装置で、光学系の光学特性を短時間で高精度に計測する。
PCT/JP2008/000953 2007-04-12 2008-04-11 計測方法、露光方法及びデバイス製造方法 WO2008132799A1 (ja)

Priority Applications (1)

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JP2009511662A JPWO2008132799A1 (ja) 2007-04-12 2008-04-11 計測方法、露光方法及びデバイス製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007105362 2007-04-12
JP2007-105362 2007-04-12

Publications (1)

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WO2008132799A1 true WO2008132799A1 (ja) 2008-11-06

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US (1) US7948616B2 (ja)
JP (1) JPWO2008132799A1 (ja)
KR (1) KR20100014357A (ja)
TW (1) TW200905157A (ja)
WO (1) WO2008132799A1 (ja)

Cited By (3)

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WO2011061928A1 (ja) * 2009-11-17 2011-05-26 株式会社ニコン 光学特性計測方法、露光方法及びデバイス製造方法
JP2012002731A (ja) * 2010-06-18 2012-01-05 Nuflare Technology Inc 検査装置および検査方法
WO2012056601A1 (ja) * 2010-10-26 2012-05-03 株式会社ニコン 検査装置、検査方法、露光方法、および半導体デバイスの製造方法

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JP4968335B2 (ja) * 2007-06-11 2012-07-04 株式会社ニコン 計測部材、センサ、計測方法、露光装置、露光方法、及びデバイス製造方法
EP2458441B1 (en) * 2010-11-30 2022-01-19 ASML Netherlands BV Measuring method, apparatus and substrate
TWI502274B (zh) * 2011-05-16 2015-10-01 United Microelectronics Corp 雙重曝光製程之光罩組及其形成方法
JP2013021674A (ja) * 2011-06-13 2013-01-31 Ricoh Co Ltd 画像計測方法、画像計測装置及び画像検査装置
JP2013245997A (ja) * 2012-05-24 2013-12-09 Mitsubishi Electric Corp 波面計測装置
CN104281093B (zh) * 2013-07-08 2017-04-12 全研科技有限公司 微调装置的对位组装结构
KR102238708B1 (ko) 2014-08-19 2021-04-12 삼성전자주식회사 리소그래피 공정의 초점 이동 체크 방법 및 이를 이용한 전사 패턴 오류 분석 방법
CN111158220A (zh) 2015-02-23 2020-05-15 株式会社尼康 测量装置及方法、光刻***、曝光装置及方法
KR20230107706A (ko) * 2015-02-23 2023-07-17 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고디바이스 제조 방법
CN107278279B (zh) 2015-02-23 2020-07-03 株式会社尼康 基板处理***及基板处理方法、以及组件制造方法
TWI752764B (zh) * 2015-05-19 2022-01-11 美商克萊譚克公司 用於疊對測量之形貌相位控制
US11428880B2 (en) * 2020-07-31 2022-08-30 Openlight Photonics, Inc. Optical based placement of an optical compontent using a pick and place machine
CN115388762A (zh) * 2022-07-25 2022-11-25 魅杰光电科技(上海)有限公司 一种晶圆的cd量测设备及相应的cd量测方法

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Also Published As

Publication number Publication date
TWI371572B (ja) 2012-09-01
US7948616B2 (en) 2011-05-24
US20080259353A1 (en) 2008-10-23
KR20100014357A (ko) 2010-02-10
JPWO2008132799A1 (ja) 2010-07-22
TW200905157A (en) 2009-02-01

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