JP2008004597A5 - - Google Patents
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- JP2008004597A5 JP2008004597A5 JP2006169798A JP2006169798A JP2008004597A5 JP 2008004597 A5 JP2008004597 A5 JP 2008004597A5 JP 2006169798 A JP2006169798 A JP 2006169798A JP 2006169798 A JP2006169798 A JP 2006169798A JP 2008004597 A5 JP2008004597 A5 JP 2008004597A5
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- JP
- Japan
- Prior art keywords
- pattern
- charged particle
- particle beam
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002245 particle Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 238000005259 measurement Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
Claims (3)
- 荷電粒子線をラスタースキャンしてパターンを基板上に描画する荷電粒子線描画方法において、
線幅を測定する対象のパターンを描画する第1の描画工程と、
前記第1の描画工程の後に前記線幅を測定する方向にパターンの描画位置を移動して前記パターンを描画する第2の描画工程と、
前記第1の描画工程及び前記第2の描画工程において描画されたパターンの線幅をそれぞれ測定する測定工程と、
互いに異なる複数のドーズ指令信号それぞれに関して前記第1の描画工程、前記第2の描画工程、及び前記測定工程を行った結果に基づいて前記ドーズ指令信号の補正値を決定する決定ステップと、を有することを特徴とする荷電粒子線描画方法。 - 請求項1に記載の荷電粒子線描画方法を行うことを特徴とする露光装置。
- 請求項2に記載の露光装置を用いて基板を露光する工程と、
前記工程で露光された基板を現像する工程と、
を有することを特徴とするデバイス製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006169798A JP5116996B2 (ja) | 2006-06-20 | 2006-06-20 | 荷電粒子線描画方法、露光装置、及びデバイス製造方法 |
US11/762,182 US7692166B2 (en) | 2006-06-20 | 2007-06-13 | Charged particle beam exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006169798A JP5116996B2 (ja) | 2006-06-20 | 2006-06-20 | 荷電粒子線描画方法、露光装置、及びデバイス製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008004597A JP2008004597A (ja) | 2008-01-10 |
JP2008004597A5 true JP2008004597A5 (ja) | 2009-08-06 |
JP5116996B2 JP5116996B2 (ja) | 2013-01-09 |
Family
ID=39008772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006169798A Expired - Fee Related JP5116996B2 (ja) | 2006-06-20 | 2006-06-20 | 荷電粒子線描画方法、露光装置、及びデバイス製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7692166B2 (ja) |
JP (1) | JP5116996B2 (ja) |
Families Citing this family (33)
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EP3294045B1 (en) | 2004-07-21 | 2019-03-27 | Mevion Medical Systems, Inc. | A programmable radio frequency waveform generator for a synchrocyclotron |
CA2629333C (en) | 2005-11-18 | 2013-01-22 | Still River Systems Incorporated | Charged particle radiation therapy |
US8003964B2 (en) | 2007-10-11 | 2011-08-23 | Still River Systems Incorporated | Applying a particle beam to a patient |
US8581523B2 (en) | 2007-11-30 | 2013-11-12 | Mevion Medical Systems, Inc. | Interrupted particle source |
US8933650B2 (en) | 2007-11-30 | 2015-01-13 | Mevion Medical Systems, Inc. | Matching a resonant frequency of a resonant cavity to a frequency of an input voltage |
JP5663477B2 (ja) | 2009-07-01 | 2015-02-04 | 凸版印刷株式会社 | 針状体 |
US20120112091A1 (en) * | 2010-11-04 | 2012-05-10 | National Taiwan University | Method for adjusting status of particle beams for patterning a substrate and system using the same |
KR102088651B1 (ko) | 2012-02-29 | 2020-03-16 | 도판 인사츠 가부시키가이샤 | 침상체 및 침상체의 제조 방법 |
EP3581243A1 (en) | 2012-09-28 | 2019-12-18 | Mevion Medical Systems, Inc. | Controlling particle therapy |
US10254739B2 (en) | 2012-09-28 | 2019-04-09 | Mevion Medical Systems, Inc. | Coil positioning system |
US9301384B2 (en) | 2012-09-28 | 2016-03-29 | Mevion Medical Systems, Inc. | Adjusting energy of a particle beam |
WO2014052721A1 (en) | 2012-09-28 | 2014-04-03 | Mevion Medical Systems, Inc. | Control system for a particle accelerator |
TW201424466A (zh) | 2012-09-28 | 2014-06-16 | Mevion Medical Systems Inc | 磁場再生器 |
TW201433331A (zh) | 2012-09-28 | 2014-09-01 | Mevion Medical Systems Inc | 線圈位置調整 |
CN104813747B (zh) | 2012-09-28 | 2018-02-02 | 梅维昂医疗***股份有限公司 | 使用磁场颤振聚焦粒子束 |
US9723705B2 (en) | 2012-09-28 | 2017-08-01 | Mevion Medical Systems, Inc. | Controlling intensity of a particle beam |
JP6121544B2 (ja) | 2012-09-28 | 2017-04-26 | メビオン・メディカル・システムズ・インコーポレーテッド | 粒子ビームの集束 |
US8791656B1 (en) | 2013-05-31 | 2014-07-29 | Mevion Medical Systems, Inc. | Active return system |
US9730308B2 (en) | 2013-06-12 | 2017-08-08 | Mevion Medical Systems, Inc. | Particle accelerator that produces charged particles having variable energies |
CN110237447B (zh) | 2013-09-27 | 2021-11-02 | 梅维昂医疗***股份有限公司 | 粒子治疗*** |
US10675487B2 (en) | 2013-12-20 | 2020-06-09 | Mevion Medical Systems, Inc. | Energy degrader enabling high-speed energy switching |
US9962560B2 (en) | 2013-12-20 | 2018-05-08 | Mevion Medical Systems, Inc. | Collimator and energy degrader |
US9661736B2 (en) | 2014-02-20 | 2017-05-23 | Mevion Medical Systems, Inc. | Scanning system for a particle therapy system |
US9950194B2 (en) | 2014-09-09 | 2018-04-24 | Mevion Medical Systems, Inc. | Patient positioning system |
CN105301472A (zh) * | 2015-11-04 | 2016-02-03 | 天津津航计算技术研究所 | 一种空间单粒子翻转率的测量*** |
US10786689B2 (en) | 2015-11-10 | 2020-09-29 | Mevion Medical Systems, Inc. | Adaptive aperture |
WO2018009779A1 (en) | 2016-07-08 | 2018-01-11 | Mevion Medical Systems, Inc. | Treatment planning |
US11103730B2 (en) | 2017-02-23 | 2021-08-31 | Mevion Medical Systems, Inc. | Automated treatment in particle therapy |
EP3630391A1 (en) | 2017-05-22 | 2020-04-08 | Howmedica Osteonics Corp. | Device for in-situ fabrication process monitoring and feedback control of an electron beam additive manufacturing process |
JP6940676B2 (ja) | 2017-06-30 | 2021-09-29 | メビオン・メディカル・システムズ・インコーポレーテッド | リニアモーターを使用して制御される構成可能コリメータ |
US11117195B2 (en) | 2018-07-19 | 2021-09-14 | The University Of Liverpool | System and process for in-process electron beam profile and location analyses |
TW202041245A (zh) | 2019-03-08 | 2020-11-16 | 美商美威高能離子醫療系統公司 | 用於粒子治療系統之準直儀及降能器 |
US11036147B2 (en) * | 2019-03-20 | 2021-06-15 | Kla Corporation | System and method for converting backside surface roughness to frontside overlay |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0391228A (ja) * | 1989-09-01 | 1991-04-16 | Jeol Ltd | 荷電粒子ビーム径測定方法 |
JPH04116915A (ja) * | 1990-09-07 | 1992-04-17 | Jeol Ltd | 描画ビーム径調整方法 |
JP3274212B2 (ja) * | 1993-03-18 | 2002-04-15 | 株式会社日立製作所 | 電子線検出器及びそれを用いた電子線描画装置 |
US5432352A (en) | 1993-09-20 | 1995-07-11 | Eaton Corporation | Ion beam scan control |
JP3469422B2 (ja) | 1996-02-23 | 2003-11-25 | 株式会社東芝 | 荷電ビーム描画方法及び描画装置 |
US5981961A (en) | 1996-03-15 | 1999-11-09 | Applied Materials, Inc. | Apparatus and method for improved scanning efficiency in an ion implanter |
JP2000349016A (ja) * | 1999-06-07 | 2000-12-15 | Sony Corp | 描画方法、露光用マスク、露光用マスクの製造方法、並びに、半導体装置及びその製造方法 |
JP2001168018A (ja) | 1999-12-13 | 2001-06-22 | Canon Inc | 荷電粒子線露光装置、荷電粒子線露光方法及び露光補正データの決定方法、該方法を適用したデバイスの製造方法。 |
US7282427B1 (en) | 2006-05-04 | 2007-10-16 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
JP2005026527A (ja) * | 2003-07-03 | 2005-01-27 | Sony Corp | 露光方法および半導体装置の製造方法 |
JP4494734B2 (ja) * | 2003-07-08 | 2010-06-30 | キヤノン株式会社 | 荷電粒子線描画方法、荷電粒子線露光装置及びデバイス製造方法 |
US7462848B2 (en) * | 2003-10-07 | 2008-12-09 | Multibeam Systems, Inc. | Optics for generation of high current density patterned charged particle beams |
US6870170B1 (en) | 2004-03-04 | 2005-03-22 | Applied Materials, Inc. | Ion implant dose control |
JP4402529B2 (ja) * | 2004-06-30 | 2010-01-20 | キヤノン株式会社 | 荷電粒子線露光方法、荷電粒子線露光装置及びデバイス製造方法 |
JP2008004596A (ja) * | 2006-06-20 | 2008-01-10 | Canon Inc | 荷電粒子線描画方法、露光装置、及びデバイス製造方法 |
-
2006
- 2006-06-20 JP JP2006169798A patent/JP5116996B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-13 US US11/762,182 patent/US7692166B2/en not_active Expired - Fee Related
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