WO2008117696A1 - 2層積層膜およびこれを用いたパターン形成方法、並びに2層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物 - Google Patents
2層積層膜およびこれを用いたパターン形成方法、並びに2層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物 Download PDFInfo
- Publication number
- WO2008117696A1 WO2008117696A1 PCT/JP2008/054926 JP2008054926W WO2008117696A1 WO 2008117696 A1 WO2008117696 A1 WO 2008117696A1 JP 2008054926 W JP2008054926 W JP 2008054926W WO 2008117696 A1 WO2008117696 A1 WO 2008117696A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- double
- layered film
- resin composition
- forming
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
本発明は、基板表面にバリのない製膜層を容易に形成することができるレジスト膜等を提供することを目的としている。
本発明に係る2層積層膜は、(A)下記一般式(1)で表される構造単位を有する重合体および(C)溶剤を含有する樹脂組成物1から得られる下層(レジスト層[I])と、
(D)フェノール性水酸基を有する重合体、(E)キノンジアジド基含有化合物および(G)溶剤を含有するポジ型感放射線性樹脂組成物2から得られる上層(レジスト層[II])とからなることを特徴としている。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007085066A JP4899986B2 (ja) | 2007-03-28 | 2007-03-28 | 2層積層膜およびこれを用いたパターン形成方法 |
JP2007-085066 | 2007-03-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008117696A1 true WO2008117696A1 (ja) | 2008-10-02 |
Family
ID=39788432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/054926 WO2008117696A1 (ja) | 2007-03-28 | 2008-03-18 | 2層積層膜およびこれを用いたパターン形成方法、並びに2層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4899986B2 (ja) |
TW (1) | TW200905402A (ja) |
WO (1) | WO2008117696A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016060137A1 (ja) * | 2014-10-14 | 2016-04-21 | 太陽インキ製造株式会社 | 積層構造体 |
US12040188B2 (en) | 2020-07-23 | 2024-07-16 | Tencent Technology (Shenzhen) Company Limited | Photoresist structure, patterned deposition layer, semiconductor chip and manufacturing method thereof |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101941712B1 (ko) | 2012-06-05 | 2019-01-24 | 리쿠아비스타 비.브이. | 전기습윤 표시 장치 및 이의 제조 방법 |
JP6147995B2 (ja) * | 2012-11-26 | 2017-06-14 | 東京応化工業株式会社 | メッキ造形物の形成方法 |
US10330999B2 (en) | 2014-09-22 | 2019-06-25 | Samsung Display Co., Ltd. | Display panel and method of manufacturing the same |
KR102360093B1 (ko) | 2015-07-22 | 2022-02-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102313365B1 (ko) * | 2015-08-25 | 2021-10-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치의 제조 방법 |
US10243175B2 (en) * | 2016-02-02 | 2019-03-26 | Samsung Display Co., Ltd. | Organic light-emitting apparatus fabricated using a fluoropolymer and method of manufacturing the same |
JP7338482B2 (ja) * | 2020-01-14 | 2023-09-05 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP7066038B1 (ja) | 2021-12-10 | 2022-05-12 | ナガセケムテックス株式会社 | 樹脂組成物、及び、パターンレジスト膜付き基板の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005010779A (ja) * | 2003-06-20 | 2005-01-13 | Samsung Electronics Co Ltd | ディスプレイパネル駆動システムの高効率電源供給装置及びその設計方法 |
JP2005266795A (ja) * | 2004-02-20 | 2005-09-29 | Jsr Corp | バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法 |
JP2005316471A (ja) * | 2004-04-27 | 2005-11-10 | Agfa Gevaert Nv | ネガ作用性感熱性平版印刷版前駆体 |
WO2005111724A1 (ja) * | 2004-05-14 | 2005-11-24 | Nissan Chemical Industries, Ltd. | ビニルエーテル化合物を含む反射防止膜形成組成物 |
JP2007052351A (ja) * | 2005-08-19 | 2007-03-01 | Jsr Corp | バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法 |
-
2007
- 2007-03-28 JP JP2007085066A patent/JP4899986B2/ja active Active
-
2008
- 2008-03-18 WO PCT/JP2008/054926 patent/WO2008117696A1/ja active Application Filing
- 2008-03-25 TW TW97110589A patent/TW200905402A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005010779A (ja) * | 2003-06-20 | 2005-01-13 | Samsung Electronics Co Ltd | ディスプレイパネル駆動システムの高効率電源供給装置及びその設計方法 |
JP2005266795A (ja) * | 2004-02-20 | 2005-09-29 | Jsr Corp | バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法 |
JP2005316471A (ja) * | 2004-04-27 | 2005-11-10 | Agfa Gevaert Nv | ネガ作用性感熱性平版印刷版前駆体 |
WO2005111724A1 (ja) * | 2004-05-14 | 2005-11-24 | Nissan Chemical Industries, Ltd. | ビニルエーテル化合物を含む反射防止膜形成組成物 |
JP2007052351A (ja) * | 2005-08-19 | 2007-03-01 | Jsr Corp | バンプ形成用樹脂組成物、バンプ形成用二層積層膜、およびバンプ形成方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016060137A1 (ja) * | 2014-10-14 | 2016-04-21 | 太陽インキ製造株式会社 | 積層構造体 |
JPWO2016060137A1 (ja) * | 2014-10-14 | 2017-06-08 | 太陽インキ製造株式会社 | 積層構造体 |
US12040188B2 (en) | 2020-07-23 | 2024-07-16 | Tencent Technology (Shenzhen) Company Limited | Photoresist structure, patterned deposition layer, semiconductor chip and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP4899986B2 (ja) | 2012-03-21 |
JP2008242247A (ja) | 2008-10-09 |
TW200905402A (en) | 2009-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008117696A1 (ja) | 2層積層膜およびこれを用いたパターン形成方法、並びに2層積層膜の下層形成用樹脂組成物および上層形成用ポジ型感放射線性樹脂組成物 | |
EP2062950A3 (en) | Topcoat composition, alkali developer-soluble topcoat film using the composition and pattern forming method using the same | |
WO2009063808A1 (ja) | ポジ型感光性樹脂組成物、レジストパターンの製造方法、半導体装置及び電子デバイス | |
WO2009034998A1 (ja) | 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 | |
SG160273A1 (en) | Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition. | |
TW200702928A (en) | Composition for underlayer film of resist and process for producing the same | |
WO2008143302A1 (ja) | レジスト下層膜形成用組成物 | |
WO2004081663A3 (en) | Novel photosensitive resin compositions | |
TW200628974A (en) | Resist composition | |
WO2006030320A3 (en) | Antireflective compositions for photoresists | |
WO2008099869A1 (ja) | 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法 | |
ATE540336T1 (de) | Zusammensetzung zur bildung eines oberschichtfilms und verfahren zur bildung einer fotoresiststruktur | |
EP1729176A4 (en) | POSITIVELY WORKING RADIATION-SENSITIVE RESIN COMPOSITION | |
WO2013064892A3 (en) | Nanocomposite positive photosensitive composition and use thereof | |
SG160355A1 (en) | Photosensitive resin composition, photosensitive element, method for forming resist pattern and method for producing printed wiring board | |
WO2008126804A1 (ja) | レジスト下層膜形成組成物 | |
TW200715061A (en) | Underlayer coating film forming composition for lithography containing vinyl naphthalene resin derivative | |
WO2007018108A3 (en) | Plastic lens and method of producing plastic lens | |
WO2008084786A1 (ja) | 化合物及び感放射線性組成物 | |
TW200641538A (en) | Positive-working photoresist composition for thick film formation | |
TW200722924A (en) | Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material | |
TW200702912A (en) | Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same | |
WO2008123049A1 (ja) | 被膜形成方法及びそれに用いる樹脂組成物、絶縁膜を有する構造体及びその製造方法並びに電子部品 | |
WO2009014113A1 (ja) | スプレー塗布用ポジ型感光性樹脂組成物、それを用いた硬化膜の形成方法、硬化膜および半導体装置 | |
WO2011053100A3 (ko) | 아크릴레이트 수지, 이를 포함하는 포토레지스트 조성물, 및 포토레지스트 패턴 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08722320 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08722320 Country of ref document: EP Kind code of ref document: A1 |