WO2011053100A3 - 아크릴레이트 수지, 이를 포함하는 포토레지스트 조성물, 및 포토레지스트 패턴 - Google Patents

아크릴레이트 수지, 이를 포함하는 포토레지스트 조성물, 및 포토레지스트 패턴 Download PDF

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Publication number
WO2011053100A3
WO2011053100A3 PCT/KR2010/007678 KR2010007678W WO2011053100A3 WO 2011053100 A3 WO2011053100 A3 WO 2011053100A3 KR 2010007678 W KR2010007678 W KR 2010007678W WO 2011053100 A3 WO2011053100 A3 WO 2011053100A3
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WO
WIPO (PCT)
Prior art keywords
photoresist
acrylate resin
composition
same
pattern
Prior art date
Application number
PCT/KR2010/007678
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English (en)
French (fr)
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WO2011053100A2 (ko
Inventor
성혜란
안경호
김유나
김경준
오동현
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to US12/939,870 priority Critical patent/US20110117332A1/en
Publication of WO2011053100A2 publication Critical patent/WO2011053100A2/ko
Publication of WO2011053100A3 publication Critical patent/WO2011053100A3/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

본 발명은 후막 형성을 위한 화학증폭형 포토레지스트 조성물에 포함되는 아크릴레이트 수지, 이를 포함하는 화학증폭형 포토레지스트 조성물, 및 이로부터 제조되는 포토레지스트 패턴에 관한 것이다. 본 발명에 따른 아크릴레이트 수지를 포함하는 포토레지스트 조성물은 상용성(분산 안정성), 도포성, 현상ㆍ해상성과 같은 주요한 특성을 손상시키지 않고 감도의 향상을 달성할 수 있다. 또한, 이러한 조성물로부터 후막 레지스트 패턴 형성이 가능하며, 상기 패턴은 감도, 현상성, 패턴성, 크랙 내성, 도금 내성이 우수한 효과를 가진다.
PCT/KR2010/007678 2009-11-02 2010-11-02 아크릴레이트 수지, 이를 포함하는 포토레지스트 조성물, 및 포토레지스트 패턴 WO2011053100A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/939,870 US20110117332A1 (en) 2009-11-02 2010-11-04 Acrylate resin, photoresist composition comprising the same, and photoresist pattern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0105182 2009-11-02
KR20090105182 2009-11-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/939,870 Continuation US20110117332A1 (en) 2009-11-02 2010-11-04 Acrylate resin, photoresist composition comprising the same, and photoresist pattern

Publications (2)

Publication Number Publication Date
WO2011053100A2 WO2011053100A2 (ko) 2011-05-05
WO2011053100A3 true WO2011053100A3 (ko) 2011-09-29

Family

ID=43922920

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007678 WO2011053100A2 (ko) 2009-11-02 2010-11-02 아크릴레이트 수지, 이를 포함하는 포토레지스트 조성물, 및 포토레지스트 패턴

Country Status (2)

Country Link
US (1) US20110117332A1 (ko)
WO (1) WO2011053100A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103387636B (zh) * 2013-07-05 2015-08-12 昆山西迪光电材料有限公司 含倍半萜的成膜树脂及其正性248nm光刻胶
JP6564196B2 (ja) * 2014-03-20 2019-08-21 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
JP6456176B2 (ja) * 2015-02-10 2019-01-23 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
JP6573545B2 (ja) * 2015-12-21 2019-09-11 富士フイルム株式会社 ポジ型感光性転写材料及び回路配線の製造方法
KR102128536B1 (ko) 2017-07-04 2020-06-30 주식회사 엘지화학 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법
CN108196426A (zh) * 2018-01-05 2018-06-22 潍坊星泰克微电子材料有限公司 用于gpp工艺的光刻胶、制备方法及其光刻工艺
WO2019150966A1 (ja) 2018-02-05 2019-08-08 日本ゼオン株式会社 レジスト組成物およびレジスト膜

Citations (4)

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JPH0572738A (ja) * 1991-09-17 1993-03-26 Fujitsu Ltd 化学増幅型レジストとレジストパターン形成方法
US6045970A (en) * 1998-04-20 2000-04-04 Samsung Electronics Co., Ltd. Polymer for photoresist, photoresist composition containing the same, and preparation method thereof
US6083659A (en) * 1998-04-20 2000-07-04 Samsung Electronics Co., Ltd. Polymer mixture for photoresist and photoresist composition containing the same
JP2003177541A (ja) * 2002-11-21 2003-06-27 Tokyo Ohka Kogyo Co Ltd 化学増幅型ポジ型レジスト組成物

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US6045970A (en) * 1998-04-20 2000-04-04 Samsung Electronics Co., Ltd. Polymer for photoresist, photoresist composition containing the same, and preparation method thereof
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JP2003177541A (ja) * 2002-11-21 2003-06-27 Tokyo Ohka Kogyo Co Ltd 化学増幅型ポジ型レジスト組成物

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Publication number Publication date
WO2011053100A2 (ko) 2011-05-05
US20110117332A1 (en) 2011-05-19

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