WO2008117395A1 - 有機半導体素子及びその製造方法 - Google Patents

有機半導体素子及びその製造方法 Download PDF

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Publication number
WO2008117395A1
WO2008117395A1 PCT/JP2007/056212 JP2007056212W WO2008117395A1 WO 2008117395 A1 WO2008117395 A1 WO 2008117395A1 JP 2007056212 W JP2007056212 W JP 2007056212W WO 2008117395 A1 WO2008117395 A1 WO 2008117395A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic semiconductor
source
electrode
semiconductor element
channel region
Prior art date
Application number
PCT/JP2007/056212
Other languages
English (en)
French (fr)
Inventor
Takashi Chuman
Chihiro Harada
Original Assignee
Pioneer Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corporation filed Critical Pioneer Corporation
Priority to US12/450,315 priority Critical patent/US20100090204A1/en
Priority to JP2009506109A priority patent/JP5039126B2/ja
Priority to PCT/JP2007/056212 priority patent/WO2008117395A1/ja
Priority to KR1020097021768A priority patent/KR101062108B1/ko
Publication of WO2008117395A1 publication Critical patent/WO2008117395A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

【課題】有機半導体素子において、より高精細なパターン形成を可能とし、チャネル領域に有機半導体層をより均一に形成する。 【解決手段】基板１上にゲート電極２が形成され、ゲート電極２上にゲート絶縁層３が形成され、ゲート絶縁層３上にソース電極４とドレイン電極５が形成され、ソース・ドレイン電極４、５間でゲート絶縁層３を介してゲート電極２に対向する有機半導体層６を有し、ソース・ドレイン電極４、５面には、ソース・ドレイン電極４、５間に形成されるチャネル領域を除いて、表面エネルギーがチャネル領域より低い隔壁７が形成される。
PCT/JP2007/056212 2007-03-26 2007-03-26 有機半導体素子及びその製造方法 WO2008117395A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/450,315 US20100090204A1 (en) 2007-03-26 2007-03-26 Organic semiconductor element and manufacture method thereof
JP2009506109A JP5039126B2 (ja) 2007-03-26 2007-03-26 有機半導体素子及びその製造方法
PCT/JP2007/056212 WO2008117395A1 (ja) 2007-03-26 2007-03-26 有機半導体素子及びその製造方法
KR1020097021768A KR101062108B1 (ko) 2007-03-26 2007-03-26 유기 반도체 소자 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056212 WO2008117395A1 (ja) 2007-03-26 2007-03-26 有機半導体素子及びその製造方法

Publications (1)

Publication Number Publication Date
WO2008117395A1 true WO2008117395A1 (ja) 2008-10-02

Family

ID=39788138

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056212 WO2008117395A1 (ja) 2007-03-26 2007-03-26 有機半導体素子及びその製造方法

Country Status (4)

Country Link
US (1) US20100090204A1 (ja)
JP (1) JP5039126B2 (ja)
KR (1) KR101062108B1 (ja)
WO (1) WO2008117395A1 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009295670A (ja) * 2008-06-03 2009-12-17 Hitachi Ltd 薄膜トランジスタおよびそれを用いた装置
JP2011054877A (ja) * 2009-09-04 2011-03-17 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法
WO2013159881A2 (en) 2012-04-25 2013-10-31 Merck Patent Gmbh Bank structures for organic electronic devices
WO2014072016A1 (en) 2012-11-08 2014-05-15 Merck Patent Gmbh Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith
US8916863B2 (en) 2011-09-26 2014-12-23 Panasonic Corporation Organic thin-film transistor and method of manufacturing organic thin-film transistor
US9425417B2 (en) 2012-09-21 2016-08-23 Merck Patent Gmbh Polycycloolefinic polymer formulation for an organic semiconductor
WO2016198142A1 (en) 2015-06-12 2016-12-15 Merck Patent Gmbh Organic electronic devices with fluoropolymer bank structures
US9647213B2 (en) 2010-09-02 2017-05-09 Merck Patent Gmbh Interlayer for electronic devices
WO2018033510A2 (en) 2016-08-17 2018-02-22 Merck Patent Gmbh Electronic device with bank structures
CN111640800A (zh) * 2020-04-30 2020-09-08 中国科学院微电子研究所 一种半导体器件及其制备方法
US11901431B2 (en) 2018-07-23 2024-02-13 Ricoh Company, Ltd. Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI469224B (zh) * 2008-10-20 2015-01-11 Ind Tech Res Inst 有機薄膜電晶體及其製造方法
JPWO2011013600A1 (ja) * 2009-07-31 2013-01-07 国立大学法人東北大学 半導体装置、半導体装置の製造方法、及び表示装置
JP5656049B2 (ja) * 2010-05-26 2015-01-21 ソニー株式会社 薄膜トランジスタの製造方法
JPWO2018186377A1 (ja) * 2017-04-04 2020-02-20 パイオニア株式会社 発光装置の製造方法及び発光装置

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JP2005354051A (ja) * 2004-06-08 2005-12-22 Palo Alto Research Center Inc 印刷トランジスタ製造方法
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
JP2007036259A (ja) * 2005-07-27 2007-02-08 Samsung Electronics Co Ltd 薄膜トランジスタ基板及びその製造方法

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JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
DE10228772A1 (de) * 2002-06-27 2004-01-15 Infineon Technologies Ag Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Nitrilen und Isonitrilen
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
CN100504553C (zh) * 2004-02-06 2009-06-24 三星电子株式会社 薄膜晶体管阵列面板及包括该薄膜晶体管阵列面板的液晶显示器
JP5109223B2 (ja) * 2004-08-04 2012-12-26 ソニー株式会社 電界効果型トランジスタ
TWI237899B (en) * 2004-08-06 2005-08-11 Ind Tech Res Inst Method for manufacturing OTFT by high precision printing
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101078360B1 (ko) * 2004-11-12 2011-10-31 엘지디스플레이 주식회사 폴리형 액정 표시 패널 및 그 제조 방법
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KR101197053B1 (ko) * 2005-09-30 2012-11-06 삼성디스플레이 주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
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KR101157270B1 (ko) * 2006-02-17 2012-06-15 삼성전자주식회사 유기박막 트랜지스터의 제조방법 및 그에 의해 제조된유기박막 트랜지스터
US8017940B2 (en) * 2007-05-25 2011-09-13 Panasonic Corporation Organic transistor, method of forming organic transistor and organic EL display with organic transistor
JP5111949B2 (ja) * 2007-06-18 2013-01-09 株式会社日立製作所 薄膜トランジスタの製造方法及び薄膜トランジスタ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005354051A (ja) * 2004-06-08 2005-12-22 Palo Alto Research Center Inc 印刷トランジスタ製造方法
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
JP2007036259A (ja) * 2005-07-27 2007-02-08 Samsung Electronics Co Ltd 薄膜トランジスタ基板及びその製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009295670A (ja) * 2008-06-03 2009-12-17 Hitachi Ltd 薄膜トランジスタおよびそれを用いた装置
JP2011054877A (ja) * 2009-09-04 2011-03-17 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法
US9647213B2 (en) 2010-09-02 2017-05-09 Merck Patent Gmbh Interlayer for electronic devices
US8916863B2 (en) 2011-09-26 2014-12-23 Panasonic Corporation Organic thin-film transistor and method of manufacturing organic thin-film transistor
WO2013159881A2 (en) 2012-04-25 2013-10-31 Merck Patent Gmbh Bank structures for organic electronic devices
US9331281B2 (en) 2012-04-25 2016-05-03 Merck Patent Gmbh Bank structures for organic electronic devices
US9425417B2 (en) 2012-09-21 2016-08-23 Merck Patent Gmbh Polycycloolefinic polymer formulation for an organic semiconductor
WO2014072016A1 (en) 2012-11-08 2014-05-15 Merck Patent Gmbh Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith
WO2016198142A1 (en) 2015-06-12 2016-12-15 Merck Patent Gmbh Organic electronic devices with fluoropolymer bank structures
WO2018033510A2 (en) 2016-08-17 2018-02-22 Merck Patent Gmbh Electronic device with bank structures
US11282906B2 (en) 2016-08-17 2022-03-22 Merck Patent Gmbh Electronic device with bank structures
US11901431B2 (en) 2018-07-23 2024-02-13 Ricoh Company, Ltd. Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system
CN111640800A (zh) * 2020-04-30 2020-09-08 中国科学院微电子研究所 一种半导体器件及其制备方法
CN111640800B (zh) * 2020-04-30 2023-04-11 中国科学院微电子研究所 一种半导体器件及其制备方法

Also Published As

Publication number Publication date
KR101062108B1 (ko) 2011-09-02
US20100090204A1 (en) 2010-04-15
JPWO2008117395A1 (ja) 2010-07-08
KR20100005086A (ko) 2010-01-13
JP5039126B2 (ja) 2012-10-03

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