WO2008108128A1 - 誘電体、誘電体を用いたキャパシタ、誘電体を用いた半導体装置、及び誘電体の製造方法 - Google Patents

誘電体、誘電体を用いたキャパシタ、誘電体を用いた半導体装置、及び誘電体の製造方法 Download PDF

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WO2008108128A1
WO2008108128A1 PCT/JP2008/051738 JP2008051738W WO2008108128A1 WO 2008108128 A1 WO2008108128 A1 WO 2008108128A1 JP 2008051738 W JP2008051738 W JP 2008051738W WO 2008108128 A1 WO2008108128 A1 WO 2008108128A1
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dielectric material
semiconductor device
capacitor
dielectric
producing
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PCT/JP2008/051738
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English (en)
French (fr)
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Takashi Nakagawa
Toru Tatsumi
Nobuyuki Ikarashi
Makiko Oshida
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Nec Corporation
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Priority to US12/526,238 priority Critical patent/US8203176B2/en
Priority to JP2009502482A priority patent/JPWO2008108128A1/ja
Publication of WO2008108128A1 publication Critical patent/WO2008108128A1/ja

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Abstract

　誘電体膜を利用したキャパシタ構造を有する半導体装置において、リーク電流の顕著な抑制を可能とする。 　ＺｒとＡｌとＯとを主成分とする複合酸化物の誘電体であって、ＺｒとＡｌの組成比が（１－ｘ）：ｘ（０．０１≦ｘ≦０．１５）であり、かつ結晶構造を有する。Ａｌの組成を上記の範囲に設定し、かつ結晶化することによって比誘電率が顕著に高い誘電体が得られる。上記誘電体を半導体装置のキャパシタの誘電体膜として利用することにより、リーク電流の顕著な抑制が可能となる。
PCT/JP2008/051738 2007-03-08 2008-02-04 誘電体、誘電体を用いたキャパシタ、誘電体を用いた半導体装置、及び誘電体の製造方法 WO2008108128A1 (ja)

Priority Applications (2)

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US12/526,238 US8203176B2 (en) 2007-03-08 2008-02-04 Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric
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