WO2009028569A1 - 導電体層の製造方法 - Google Patents

導電体層の製造方法 Download PDF

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Publication number
WO2009028569A1
WO2009028569A1 PCT/JP2008/065333 JP2008065333W WO2009028569A1 WO 2009028569 A1 WO2009028569 A1 WO 2009028569A1 JP 2008065333 W JP2008065333 W JP 2008065333W WO 2009028569 A1 WO2009028569 A1 WO 2009028569A1
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WO
WIPO (PCT)
Prior art keywords
layer
conductor layer
substrate
layer manufacturing
titanium oxide
Prior art date
Application number
PCT/JP2008/065333
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English (en)
French (fr)
Inventor
Naoomi Yamada
Taro Hitosugi
Tetsuya Hasegawa
Original Assignee
Asahi Glass Company, Limited
Kanagawa Academy Of Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Company, Limited, Kanagawa Academy Of Science And Technology filed Critical Asahi Glass Company, Limited
Priority to EP08828296A priority Critical patent/EP2184743A4/en
Priority to CN200880104456A priority patent/CN101785071A/zh
Priority to JP2009530156A priority patent/JP5296691B2/ja
Publication of WO2009028569A1 publication Critical patent/WO2009028569A1/ja
Priority to US12/693,715 priority patent/US20100129536A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2456—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/212—TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/218—V2O5, Nb2O5, Ta2O5
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/24—Doped oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Nonlinear Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　導電性に優れるとともに、透明性が良好な酸化チタン系導電体層を生産性良く製造できる方法を提供する。 　基体を加熱した状態で、該基体上にＮｂ等のドーパントが添加された酸化チタンからなる第１層と第２層を順に形成して導電体層からなる導電体層を製造する。第１層は多結晶を含みかつ該多結晶がルチル型結晶を含まない層となる成膜条件で形成する。第２層は基体上に直接形成したときに、多結晶を含みかつ該多結晶がルチル型結晶を含む層が得られる成膜条件で形成する。
PCT/JP2008/065333 2007-08-29 2008-08-27 導電体層の製造方法 WO2009028569A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08828296A EP2184743A4 (en) 2007-08-29 2008-08-27 METHOD FOR PRODUCING A LATERAL LAYER
CN200880104456A CN101785071A (zh) 2007-08-29 2008-08-27 导电体层的制造方法
JP2009530156A JP5296691B2 (ja) 2007-08-29 2008-08-27 導電体層の製造方法
US12/693,715 US20100129536A1 (en) 2007-08-29 2010-01-26 Process for producing electric conductor layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007222988 2007-08-29
JP2007-222988 2007-08-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/693,715 Continuation US20100129536A1 (en) 2007-08-29 2010-01-26 Process for producing electric conductor layer

Publications (1)

Publication Number Publication Date
WO2009028569A1 true WO2009028569A1 (ja) 2009-03-05

Family

ID=40387286

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065333 WO2009028569A1 (ja) 2007-08-29 2008-08-27 導電体層の製造方法

Country Status (7)

Country Link
US (1) US20100129536A1 (ja)
EP (1) EP2184743A4 (ja)
JP (1) JP5296691B2 (ja)
KR (1) KR20100049536A (ja)
CN (1) CN101785071A (ja)
TW (1) TW200918479A (ja)
WO (1) WO2009028569A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010231972A (ja) * 2009-03-26 2010-10-14 Kanagawa Acad Of Sci & Technol 導電体基板、導電体基板の製造方法、デバイス及び電子機器
JP2010251183A (ja) * 2009-04-17 2010-11-04 Konica Minolta Holdings Inc 有機エレクトロニクス素子の製造方法
WO2012002473A1 (ja) * 2010-06-30 2012-01-05 株式会社アルバック 成膜装置及び成膜方法
JP2013543476A (ja) * 2010-09-30 2013-12-05 ショット アクチエンゲゼルシャフト 熱保護グレージング及びその作製方法
KR101464061B1 (ko) * 2010-04-27 2014-11-20 피피지 인더스트리즈 오하이오 인코포레이티드 기재 상에 니오븀-도핑된 티타니아 필름을 침착시키는 방법 및 이로써 제조된 코팅된 기재
WO2018207652A1 (ja) * 2017-05-12 2018-11-15 Hoya株式会社 防塵レンズ及びその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5173512B2 (ja) * 2008-03-25 2013-04-03 財団法人神奈川科学技術アカデミー 導電体およびその製造方法
GB2487751A (en) * 2011-02-03 2012-08-08 Tioxide Europe Ltd Nanotitania coating composition
US9337366B2 (en) * 2011-07-26 2016-05-10 Micron Technology, Inc. Textured optoelectronic devices and associated methods of manufacture
US20130164543A1 (en) * 2011-12-26 2013-06-27 Asahi Glass Company, Limited Front panel for touch sensor
JP6002888B2 (ja) * 2012-06-28 2016-10-05 有限会社 渕田ナノ技研 成膜方法
CN109082631B (zh) * 2018-07-13 2020-10-13 华南师范大学 一种Ga2O3基透明导电薄膜及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02191330A (ja) * 1988-09-29 1990-07-27 Taiyo Yuden Co Ltd 酸化チタン薄膜及びその製法
JPH10138385A (ja) * 1996-11-12 1998-05-26 Hitachi Ltd 酸化物薄膜を備えたプラスチックフィルム及びその製造方法
JP2003281947A (ja) * 2002-03-25 2003-10-03 Tayca Corp 導電性酸化チタンポーラス厚膜の低温合成
JP2004095240A (ja) 2002-08-30 2004-03-25 Mitsui Chemicals Inc 透明電極
JP2005011737A (ja) * 2003-06-20 2005-01-13 Nippon Sheet Glass Co Ltd 透明導電性基板およびその製造方法ならびに光電変換素子
WO2006016608A1 (ja) 2004-08-13 2006-02-16 Kanagawa Academy Of Science And Technology 透明伝導体、透明電極、太陽電池、発光素子及びディスプレイパネル
JP2007059077A (ja) 2005-08-22 2007-03-08 Ngk Spark Plug Co Ltd スパークプラグ
JP2007222988A (ja) 2006-02-23 2007-09-06 Ntn Corp ラッピング加工方法および加工装置

Family Cites Families (3)

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JPS53147698A (en) * 1977-05-31 1978-12-22 Res Inst Iron Steel Tohoku Univ Method of producing anataze-rutile layer-like composite material
US4940511A (en) * 1988-03-28 1990-07-10 International Business Machines Corporation Method for making a magnetoresistive read transducer
US20070218646A1 (en) * 2006-03-20 2007-09-20 Asahi Glass Company, Limited Process for producing electric conductor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02191330A (ja) * 1988-09-29 1990-07-27 Taiyo Yuden Co Ltd 酸化チタン薄膜及びその製法
JPH10138385A (ja) * 1996-11-12 1998-05-26 Hitachi Ltd 酸化物薄膜を備えたプラスチックフィルム及びその製造方法
JP2003281947A (ja) * 2002-03-25 2003-10-03 Tayca Corp 導電性酸化チタンポーラス厚膜の低温合成
JP2004095240A (ja) 2002-08-30 2004-03-25 Mitsui Chemicals Inc 透明電極
JP2005011737A (ja) * 2003-06-20 2005-01-13 Nippon Sheet Glass Co Ltd 透明導電性基板およびその製造方法ならびに光電変換素子
WO2006016608A1 (ja) 2004-08-13 2006-02-16 Kanagawa Academy Of Science And Technology 透明伝導体、透明電極、太陽電池、発光素子及びディスプレイパネル
JP2007059077A (ja) 2005-08-22 2007-03-08 Ngk Spark Plug Co Ltd スパークプラグ
JP2007222988A (ja) 2006-02-23 2007-09-06 Ntn Corp ラッピング加工方法および加工装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
OYO BUTSURI, vol. 73, no. 5, 2004, pages 587 - 592
See also references of EP2184743A4

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010231972A (ja) * 2009-03-26 2010-10-14 Kanagawa Acad Of Sci & Technol 導電体基板、導電体基板の製造方法、デバイス及び電子機器
JP2010251183A (ja) * 2009-04-17 2010-11-04 Konica Minolta Holdings Inc 有機エレクトロニクス素子の製造方法
KR101464061B1 (ko) * 2010-04-27 2014-11-20 피피지 인더스트리즈 오하이오 인코포레이티드 기재 상에 니오븀-도핑된 티타니아 필름을 침착시키는 방법 및 이로써 제조된 코팅된 기재
WO2012002473A1 (ja) * 2010-06-30 2012-01-05 株式会社アルバック 成膜装置及び成膜方法
CN102770578A (zh) * 2010-06-30 2012-11-07 株式会社爱发科 成膜装置以及成膜方法
JP5801302B2 (ja) * 2010-06-30 2015-10-28 株式会社アルバック 成膜装置及び成膜方法
JP2013543476A (ja) * 2010-09-30 2013-12-05 ショット アクチエンゲゼルシャフト 熱保護グレージング及びその作製方法
WO2018207652A1 (ja) * 2017-05-12 2018-11-15 Hoya株式会社 防塵レンズ及びその製造方法
JP2018194569A (ja) * 2017-05-12 2018-12-06 Hoya株式会社 防塵レンズ及びその製造方法
CN110869818A (zh) * 2017-05-12 2020-03-06 Hoya株式会社 防尘透镜及其制造方法
JP7117081B2 (ja) 2017-05-12 2022-08-12 Hoya株式会社 防塵レンズ及びその製造方法
CN110869818B (zh) * 2017-05-12 2024-03-15 Hoya株式会社 防尘透镜及其制造方法

Also Published As

Publication number Publication date
JP5296691B2 (ja) 2013-09-25
JPWO2009028569A1 (ja) 2010-12-02
TW200918479A (en) 2009-05-01
US20100129536A1 (en) 2010-05-27
CN101785071A (zh) 2010-07-21
EP2184743A4 (en) 2010-09-15
EP2184743A1 (en) 2010-05-12
KR20100049536A (ko) 2010-05-12

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