WO2008102738A1 - 真空処理装置および真空処理装置を用いた製膜方法 - Google Patents

真空処理装置および真空処理装置を用いた製膜方法 Download PDF

Info

Publication number
WO2008102738A1
WO2008102738A1 PCT/JP2008/052677 JP2008052677W WO2008102738A1 WO 2008102738 A1 WO2008102738 A1 WO 2008102738A1 JP 2008052677 W JP2008052677 W JP 2008052677W WO 2008102738 A1 WO2008102738 A1 WO 2008102738A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
vacuum processing
film forming
discharge electrodes
forming method
Prior art date
Application number
PCT/JP2008/052677
Other languages
English (en)
French (fr)
Inventor
Keisuke Kawamura
Hiroshi Mashima
Original Assignee
Mitsubishi Heavy Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries, Ltd. filed Critical Mitsubishi Heavy Industries, Ltd.
Priority to AU2008218070A priority Critical patent/AU2008218070A1/en
Priority to US12/309,634 priority patent/US8931432B2/en
Priority to EP08711501.0A priority patent/EP2113937A4/en
Priority to CN2008800005722A priority patent/CN101542686B/zh
Publication of WO2008102738A1 publication Critical patent/WO2008102738A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　製膜特性を容易に調整し、かつ、各製膜室における製膜特性の差の発生を抑制するとともに、設備コストの低減を図ることができる真空処理装置および真空処理装置を用いた製膜方法を提供する。電源部（１７ａ）から高周波電力が両端部（５３）に供給され、基板（８）との間にプラズマを形成する複数の放電電極（３ａから３ｈ）と、複数の放電電極（３ａから３ｈ）に供給される高周波電力の位相および振幅を、両端部５３のそれぞれにおいて調節する複数の整合器（３ａｔから３ｈｔ）と、を備え、複数の整合器（３ａｔから３ｈｔ）のインピーダンスが略同一な値に設定され、インピーダンスの値は、複数の放電電極（３ａから３ｈ）のうちの一の放電電極における電源部（１７ａ）への反射電力が略最小になる値であることを特徴とする。
PCT/JP2008/052677 2007-02-19 2008-02-18 真空処理装置および真空処理装置を用いた製膜方法 WO2008102738A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2008218070A AU2008218070A1 (en) 2007-02-19 2008-02-18 Vacuum processing apparatus and deposition method using the vacuum processing apparatus
US12/309,634 US8931432B2 (en) 2007-02-19 2008-02-18 Vacuum processing apparatus
EP08711501.0A EP2113937A4 (en) 2007-02-19 2008-02-18 VACUUM PROCESSING APPARATUS AND FILM MANUFACTURING METHOD USING THE VACUUM PROCESSING APPARATUS
CN2008800005722A CN101542686B (zh) 2007-02-19 2008-02-18 真空处理装置和使用了真空处理装置的制膜方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007037852A JP5118354B2 (ja) 2007-02-19 2007-02-19 真空処理装置および真空処理装置を用いた製膜方法
JP2007-037852 2007-02-19

Publications (1)

Publication Number Publication Date
WO2008102738A1 true WO2008102738A1 (ja) 2008-08-28

Family

ID=39710015

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052677 WO2008102738A1 (ja) 2007-02-19 2008-02-18 真空処理装置および真空処理装置を用いた製膜方法

Country Status (7)

Country Link
US (1) US8931432B2 (ja)
EP (1) EP2113937A4 (ja)
JP (1) JP5118354B2 (ja)
KR (1) KR20090055554A (ja)
CN (1) CN101542686B (ja)
AU (1) AU2008218070A1 (ja)
WO (1) WO2008102738A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123627A (ja) * 2008-11-17 2010-06-03 Mitsubishi Heavy Ind Ltd 真空処理装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135694A (ja) * 2008-12-08 2010-06-17 Mitsubishi Heavy Ind Ltd 真空処理装置
JP5419666B2 (ja) * 2009-06-12 2014-02-19 三菱重工業株式会社 基板処理装置
TWI511446B (zh) * 2010-01-26 2015-12-01 Applied Materials Inc 平衡的ｒｆ電橋組件
US8808496B2 (en) 2011-09-30 2014-08-19 Tokyo Electron Limited Plasma tuning rods in microwave processing systems
US9111727B2 (en) 2011-09-30 2015-08-18 Tokyo Electron Limited Plasma tuning rods in microwave resonator plasma sources
US9728416B2 (en) 2011-09-30 2017-08-08 Tokyo Electron Limited Plasma tuning rods in microwave resonator plasma sources
US9396955B2 (en) 2011-09-30 2016-07-19 Tokyo Electron Limited Plasma tuning rods in microwave resonator processing systems
US10319872B2 (en) * 2012-05-10 2019-06-11 International Business Machines Corporation Cost-efficient high power PECVD deposition for solar cells
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
US20240153743A1 (en) * 2022-11-04 2024-05-09 Applied Materials, Inc. Fleetwide impedance tuning performance optimization

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005113878A (ja) 2003-10-10 2005-04-28 Sanyo Electric Co Ltd ロータリーコンプレッサ
JP2006066779A (ja) * 2004-08-30 2006-03-09 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置、基板処理システム、及び製膜・セルフクリーニング方法
JP2006156839A (ja) * 2004-11-30 2006-06-15 Mitsubishi Heavy Ind Ltd 製膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5810963A (en) * 1995-09-28 1998-09-22 Kabushiki Kaisha Toshiba Plasma processing apparatus and method
US5889252A (en) * 1996-12-19 1999-03-30 Lam Research Corporation Method of and apparatus for independently controlling electric parameters of an impedance matching network
GB9714142D0 (en) * 1997-07-05 1997-09-10 Surface Tech Sys Ltd An arrangement for the feeding of RF power to one or more antennae
JP3276346B2 (ja) * 1999-06-17 2002-04-22 三菱重工業株式会社 放電電極、高周波プラズマ発生装置、給電方法および半導体製造方法
US20030079983A1 (en) * 2000-02-25 2003-05-01 Maolin Long Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
JP4718093B2 (ja) * 2000-03-28 2011-07-06 東京エレクトロン株式会社 複合セグメント電極に供給される電力を制御するための方法並びにシステム
US6642661B2 (en) * 2001-08-28 2003-11-04 Tokyo Electron Limited Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor
JP2005085917A (ja) * 2003-09-08 2005-03-31 Sharp Corp プラズマプロセス装置
JP4264321B2 (ja) * 2003-10-03 2009-05-13 三菱重工業株式会社 プラズマ化学蒸着装置、プラズマ発生方法、プラズマ化学蒸着方法
JP2006278862A (ja) * 2005-03-30 2006-10-12 Mitsui Eng & Shipbuild Co Ltd プラズマ加工装置
JP4694249B2 (ja) * 2005-04-20 2011-06-08 株式会社日立ハイテクノロジーズ 真空処理装置及び試料の真空処理方法
WO2007010851A1 (ja) 2005-07-21 2007-01-25 Nabtesco Corporation 真空システム及びその運転方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005113878A (ja) 2003-10-10 2005-04-28 Sanyo Electric Co Ltd ロータリーコンプレッサ
JP2006066779A (ja) * 2004-08-30 2006-03-09 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置、基板処理システム、及び製膜・セルフクリーニング方法
JP2006156839A (ja) * 2004-11-30 2006-06-15 Mitsubishi Heavy Ind Ltd 製膜装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2113937A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123627A (ja) * 2008-11-17 2010-06-03 Mitsubishi Heavy Ind Ltd 真空処理装置

Also Published As

Publication number Publication date
CN101542686A (zh) 2009-09-23
EP2113937A4 (en) 2013-05-01
JP2008205089A (ja) 2008-09-04
EP2113937A1 (en) 2009-11-04
US8931432B2 (en) 2015-01-13
KR20090055554A (ko) 2009-06-02
AU2008218070A1 (en) 2008-08-28
CN101542686B (zh) 2013-03-27
JP5118354B2 (ja) 2013-01-16
US20100009096A1 (en) 2010-01-14

Similar Documents

Publication Publication Date Title
WO2008102738A1 (ja) 真空処理装置および真空処理装置を用いた製膜方法
US11276562B2 (en) Plasma processing using multiple radio frequency power feeds for improved uniformity
TWI552223B (zh) 電漿處理裝置
WO2010039883A3 (en) Multi-electrode pecvd source
WO2013088677A1 (ja) プラズマ処理装置
WO2010129277A3 (en) Microplasma generator and methods therefor
WO2011006018A3 (en) Apparatus and method for plasma processing
TW200504815A (en) Apparatus using hybrid coupled plasma
WO2010071785A3 (en) Plasma confinement structures in plasma processing systems
JP2007531963A (ja) 第２のｒｆ周波数の終端を用いたインピーダンス整合ネットワーク
WO2009050958A1 (ja) 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法
WO2011041332A3 (en) Off-center ground return for rf-powered showerhead
JP2013182996A5 (ja)
WO2011011532A4 (en) Hollow cathode showerhead
JP2006066905A5 (ja)
WO2009005148A1 (ja) 表面処理装置
TW200802596A (en) Plasma processing method and plasma processing apparatus
WO2007044248B1 (en) Low-voltage inductively coupled source for plasma processing
WO2009151009A3 (ja) プラズマ処理装置
EP1146569A3 (en) Thin film forming method, thin film forming apparatus and solar cell
JP2014049541A (ja) 薄膜製造装置及びその電極電圧調整方法
WO2008123142A1 (ja) プラズマ処理装置
WO2006012165A3 (en) Plasma jet generating apparatus and method of use thereof
WO2020141806A3 (ko) 플라즈마 발생 장치 및 그 동작 방법
JP2011184738A (ja) ガスバリアフィルムの製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880000572.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08711501

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12309634

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2008218070

Country of ref document: AU

Ref document number: 417/KOLNP/2009

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2008711501

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020097002853

Country of ref document: KR

ENP Entry into the national phase

Ref document number: 2008218070

Country of ref document: AU

Date of ref document: 20080218

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE