WO2008093626A1 - チップ素子およびその製造方法 - Google Patents
チップ素子およびその製造方法 Download PDFInfo
- Publication number
- WO2008093626A1 WO2008093626A1 PCT/JP2008/051166 JP2008051166W WO2008093626A1 WO 2008093626 A1 WO2008093626 A1 WO 2008093626A1 JP 2008051166 W JP2008051166 W JP 2008051166W WO 2008093626 A1 WO2008093626 A1 WO 2008093626A1
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- WO
- WIPO (PCT)
- Prior art keywords
- glass
- electrode
- glass paste
- formation
- glass layer
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Wire Bonding (AREA)
Abstract
絶縁性材であるケイ酸系ガラスを主成分とし感光性材を添加したガラスペーストを親基板に塗布する。次に、フォトマスクを用いてガラスペーストを感光させて固化する。次に、固化していないガラスペーストを除去して開口を設ける。次に、ガラスペーストを焼成してガラス層を形成する。以上の一連の工程に続いて、ガラス層の形成の後、ガラス層の開口の底面の銀電極上に、複数のメッキ層を形成してボンディング用電極を形成する。以上の工程により、ワイヤボンディングに用いる電極における金属材使用量を低減しながら、また、電極形成に係るレジストを不要にしてチップ素子を製造し、製造コストの抑制と高性能化とを図る。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008556079A JP4935828B2 (ja) | 2007-02-01 | 2008-01-28 | チップ素子およびその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-023090 | 2007-02-01 | ||
JP2007023090 | 2007-02-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008093626A1 true WO2008093626A1 (ja) | 2008-08-07 |
Family
ID=39673938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/051166 WO2008093626A1 (ja) | 2007-02-01 | 2008-01-28 | チップ素子およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4935828B2 (ja) |
WO (1) | WO2008093626A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016122846A (ja) * | 2012-06-14 | 2016-07-07 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | パワーアンプモジュールを含む関連するシステム、デバイス、および方法 |
US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
US9859231B2 (en) | 2011-03-03 | 2018-01-02 | Skyworks Solutions, Inc. | Radio frequency integrated circuit module |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60195961A (ja) * | 1984-03-19 | 1985-10-04 | Hitachi Ltd | 半導体装置 |
JP2003060428A (ja) * | 2001-08-21 | 2003-02-28 | Hitachi Ltd | 高周波回路装置及びその製造方法 |
JP2004519961A (ja) * | 2001-04-06 | 2004-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | マイクロ波回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06283566A (ja) * | 1993-03-25 | 1994-10-07 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JP2002016176A (ja) * | 2000-06-29 | 2002-01-18 | Kyocera Corp | 配線基板およびその接続構造 |
JP3531603B2 (ja) * | 2000-11-14 | 2004-05-31 | 株式会社村田製作所 | 高周波フィルタおよびそれを用いたフィルタ装置およびそれらを用いた電子装置 |
KR100632577B1 (ko) * | 2004-05-03 | 2006-10-09 | 삼성전기주식회사 | 인쇄회로기판의 전해 금도금 방법 |
-
2008
- 2008-01-28 WO PCT/JP2008/051166 patent/WO2008093626A1/ja active Application Filing
- 2008-01-28 JP JP2008556079A patent/JP4935828B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60195961A (ja) * | 1984-03-19 | 1985-10-04 | Hitachi Ltd | 半導体装置 |
JP2004519961A (ja) * | 2001-04-06 | 2004-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | マイクロ波回路 |
JP2003060428A (ja) * | 2001-08-21 | 2003-02-28 | Hitachi Ltd | 高周波回路装置及びその製造方法 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9859231B2 (en) | 2011-03-03 | 2018-01-02 | Skyworks Solutions, Inc. | Radio frequency integrated circuit module |
US10529686B2 (en) | 2011-09-02 | 2020-01-07 | Skyworks Solutions, Inc. | Mobile device with radio frequency transmission line |
US11984423B2 (en) | 2011-09-02 | 2024-05-14 | Skyworks Solutions, Inc. | Radio frequency transmission line with finish plating on conductive layer |
US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
US10937759B2 (en) | 2011-09-02 | 2021-03-02 | Skyworks Solutions, Inc. | Radio frequency transmission line |
US10090812B2 (en) | 2012-06-14 | 2018-10-02 | Skyworks Solutions, Inc. | Power amplifier modules with bonding pads and related systems, devices, and methods |
JP2016122846A (ja) * | 2012-06-14 | 2016-07-07 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | パワーアンプモジュールを含む関連するシステム、デバイス、および方法 |
KR101921686B1 (ko) * | 2012-06-14 | 2018-11-26 | 스카이워크스 솔루션즈, 인코포레이티드 | 와이어 본드 패드 및 관련된 시스템, 장치, 및 방법을 포함하는 전력 증폭기 모듈 |
US9887668B2 (en) | 2012-06-14 | 2018-02-06 | Skyworks Solutions, Inc. | Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods |
KR20200056463A (ko) * | 2012-06-14 | 2020-05-22 | 스카이워크스 솔루션즈, 인코포레이티드 | 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법 |
US10771024B2 (en) | 2012-06-14 | 2020-09-08 | Skyworks Solutions, Inc. | Power amplifier modules including transistor with grading and semiconductor resistor |
US9847755B2 (en) | 2012-06-14 | 2017-12-19 | Skyworks Solutions, Inc. | Power amplifier modules with harmonic termination circuit and related systems, devices, and methods |
KR102250612B1 (ko) | 2012-06-14 | 2021-05-10 | 스카이워크스 솔루션즈, 인코포레이티드 | 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법 |
US11451199B2 (en) | 2012-06-14 | 2022-09-20 | Skyworks Solutions, Inc. | Power amplifier systems with control interface and bias circuit |
US9660584B2 (en) | 2012-06-14 | 2017-05-23 | Skyworks Solutions, Inc. | Power amplifier modules including wire bond pad and related systems, devices, and methods |
Also Published As
Publication number | Publication date |
---|---|
JP4935828B2 (ja) | 2012-05-23 |
JPWO2008093626A1 (ja) | 2010-05-20 |
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