JP5285710B2 - 薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタの製造方法 Download PDFInfo
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- JP5285710B2 JP5285710B2 JP2010534813A JP2010534813A JP5285710B2 JP 5285710 B2 JP5285710 B2 JP 5285710B2 JP 2010534813 A JP2010534813 A JP 2010534813A JP 2010534813 A JP2010534813 A JP 2010534813A JP 5285710 B2 JP5285710 B2 JP 5285710B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010409 thin film Substances 0.000 title claims description 11
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000010949 copper Substances 0.000 claims abstract description 31
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 88
- 239000007789 gas Substances 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 239000011575 calcium Substances 0.000 abstract description 27
- 239000001257 hydrogen Substances 0.000 abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910017818 Cu—Mg Inorganic materials 0.000 description 2
- 229910017985 Cu—Zr Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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Description
さらに、本発明は、前記金属配線膜形成工程には、前記密着層形成工程後に、前記密着層よりも低抵抗の金属低抵抗層を前記密着層上に形成する金属低抵抗層形成工程が設けられた薄膜トランジスタの製造方法である。
本発明は、前記金属低抵抗層は、銅合金又は純銅からなる薄膜トランジスタの製造方法である。
10……処理対象物
12……ゲート電極
16……高抵抗半導体層
18……オーミックコンタクト層
20a、20b……金属配線膜
27……ソース電極膜
28……ドレイン電極膜
31……ソース領域
32……ドレイン領域
51……密着層
52……金属低抵抗層
111……銅合金ターゲット
112……純銅ターゲット
処理対象物10を説明すると、該処理対象物10は、ガラス等から成る透明基板11を有しており、透明基板11上には、ゲート電極12と画素電極13が離間して配置されている。
高抵抗半導体層16はノンドープのa-Siが、オーミックコンタクト層18はリンをドープしたn型のa-Siが、好適に使用される。
高抵抗半導体層16とオーミックコンタクト層18とは、アモルファスシリコンで構成されているが、多結晶シリコンであってもよい。ゲート絶縁層14は、窒化シリコン薄膜等の絶縁膜であり、酸窒化シリコン膜や他の絶縁膜でもよい。
成膜装置100は、搬出入室102と、第一の成膜室103aと、第二の成膜室103bとを有している。搬出入室102と第一の成膜室103aの間と、第一の成膜室103aと第二の成膜室103bの間は、ゲートバルブ109a、109bを介してそれぞれ接続されている。第一の成膜室103aと第二の成膜室103bには、ヒータ106a、106bがそれぞれ配置されている。
尚、第二の成膜室103bを設けず、第一の成膜室103aで密着層を形成した後に、酸素の導入を止め、Caを含む銅合金ターゲット111をスパッタして、金属低抵抗層を形成してもよい。
次に、図2(a)に示すように、金属配線膜20b上にパターニングしたレジスト膜22を配置し、レジスト膜22の開口24の底面に、金属配線膜20bの表面が露出された状態で、リン酸・硝酸・酢酸の混合液、硫酸・硝酸・酢酸の混合液、又は塩化第二鉄の溶液等のエッチング液に浸漬すると、金属配線膜20bの露出部分がエッチングされ、金属配線膜20bがパターニングされる。
形成した金属配線膜の表面を露出させ、水素プラズマに暴露した後、その表面に窒化シリコン膜を形成した。
シリコン窒化膜は、基板を配置したCVD装置内に、SiH4:20sccm、NH3ガス300sccm、N2ガス500sccmの割合で各ガスを導入し、圧力120Pa、基板温度250℃、パワー300Wで形成した。
観察結果を下記表1中に「バリア性」として示す。拡散が観察されたものを「×」、観察されなかったものを「○」と記載した。
以上の結果により、Caは銅合金ターゲット111中に0.1原子%以上含有されていると、密着性(H2プラズマ処理前及び後の密着性)とバリア性が良好であることが分かる。
Claims (3)
- 処理対象物上にゲート電極を形成するゲート電極形成工程と、
前記ゲート電極上にゲート絶縁層を形成するゲート絶縁層形成工程と、
前記ゲート絶縁層上に半導体層から成る高抵抗半導体層を形成する高抵抗半導体層形成工程と、
前記半導体層上にオーミックコンタクト層を形成するオーミックコンタクト層形成工程と、
前記オーミックコンタクト層上に金属配線膜を形成する金属配線膜形成工程と、
前記オーミックコンタクト層と前記金属配線膜をパターニングして、前記オーミックコンタクト層からソース領域とドレイン領域とを形成し、前記金属配線膜から、前記ソース領域上のソース電極と前記ドレイン領域上のドレイン電極とを形成し、前記高抵抗半導体層を露出させるエッチング工程と、
前記エッチング工程の後に、前記高抵抗半導体層表面と、前記ソース電極表面と、前記ドレイン電極表面とを露出させた状態で水素ガスを含むプラズマに曝すプラズマ暴露工程と、
を有し、
前記金属配線膜形成工程は、真空雰囲気中で、Caと銅とを含有する銅合金ターゲットを、スパッタリングガスと酸化性ガスとを含むガスを導入してスパッタリングし、前記オーミックコンタクト層上に、銅とCaと酸素とを含有する密着層を形成する密着層形成工程と、を含む薄膜トランジスタの製造方法であって、
前記銅合金ターゲットはCaを0.5原子%以上5.0原子%以下の割合で含有し、
前記酸化性ガスにはO 2 ガスを用い、前記O 2 ガスは前記スパッタリングガス100体積部に対し、3体積部以上15体積部以下の範囲で含有させる薄膜トランジスタの製造方法。 - 前記金属配線膜形成工程には、前記密着層形成工程後に、前記密着層よりも低抵抗の金属低抵抗層を前記密着層上に形成する金属低抵抗層形成工程が設けられた請求項1記載の薄膜トランジスタの製造方法。
- 前記金属低抵抗層は、銅合金又は純銅からなる請求項1又は2のいずれか1項記載の薄膜トランジスタの製造方法。
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JPH04349637A (ja) * | 1991-05-28 | 1992-12-04 | Oki Electric Ind Co Ltd | アモルファスシリコン薄膜トランジスタアレイ基板の製造方法 |
WO2008081806A1 (ja) * | 2006-12-28 | 2008-07-10 | Ulvac, Inc. | 配線膜の形成方法、トランジスタ、及び電子装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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