WO2008075918A1

WO2008075918A1 - Probe tip, probe card, method of manufacturing a probe tip and method of manufacturing a probe structure

Info

Publication number: WO2008075918A1
Application number: PCT/KR2007/006721
Authority: WO
Inventors: Woo Chang Choi
Original assignee: Phicom Corporation
Priority date: 2006-12-21
Filing date: 2007-12-21
Publication date: 2008-06-26
Also published as: TWI365986B; TW200827728A; KR100830352B1

Abstract

In a probe tip and a method of manufacturing the same, stripe-shaped trenches are formed on a sacrificial substrate in such a manner that an upper portion is larger than a lower portion. Slanted parts are formed on both of the sidewalls of each of the trenches. The slanted parts are spaced apart from one another by the same distance in a direction of the trench. Openings are formed through the substrate and a bottom portion of the slanted part is exposed through each of the openings, respectively. An extension part is formed in each opening, and extension parts make contact with slanted parts, respectively. A body is formed on neighboring extension parts under adjacent sidewalls of neighboring trenches. The sacrificial substrate is removed from the resultant structure to thereby complete the probe tip.

Description

PROBE TIP, PROBE CARD, METHOD OF MANUFACTURING A PROBE TIP AND METHOD OF MANUFACTURING A PROBE

STRUCTURE

Technical Field

[1] Exemplary embodiments of the present invention relate to a probe tip and a method of manufacturing the probe tip. More particularly, exemplary embodiments of the present invention relate to a probe tip positioned at an end portion of a probe and making contact with an electrode pad of a semiconductor device, and a method of manufacturing the probe tip. Background Art

[2] Semiconductor devices are generally manufactured through a series of unit processes such as a fab process, an electrical die sorting (EDS) process and a packaging process. Various electric circuits and devices are fabricated on a semiconductor substrate, such as a silicon wafer, in the fab process, and electrical characteristics of the electric circuits and devices are inspected in the EDS process. Then, the devices are individually separated from the wafer and each device is sealed by an epoxy resin and packaged into an individual semiconductor device in the packaging process.

[3] The EDS process is generally performed as follows. An electrical signal is applied by a tester to an electrode pad of a semiconductor device through a probe tip of a probe card that makes contact with the electrode pad. Then, the tester receives a response signal from the electrode pad of the device through the probe tip, and detects whether or not the device is operating normally.

[4] Korean Patent No. 463308 discloses a vertical-type electrical probe tip and a method of manufacturing the same. The vertical-type electrical probe tip includes a plurality of cone-shaped tips on a bottom surface of a pillar-shaped body. Therefore, the probe tip may easily make contact with a ball-type electrode pad.

[5] However, there is a problem in that the above probe tip has no elastic portion for absorbing an external force applied to the probe card, and the probe tip may cause damage to a semiconductor device. Accordingly, the probe tip cannot make contact with a general electrode pad but only with a ball-type electrode pad. Further, a manufacturing process for a conventional probe tip requires a plurality of trenches of which a bottom surface is rounded on a silicon substrate. However, there are technical difficulties in forming the trenches at a uniform depth, so that the probe tips may be manufactured to have different lengths. Disclosure of Invention Technical Problem

[6] Exemplary embodiments of the present invention provide probe tips capable of making contact with various electrode pads and having a uniform length.

[7] Exemplary embodiments of the present invention also provide a probe card including the above probe tip.

[8] Exemplary embodiments of the present invention provide a method of manufacturing the above probe tips capable of making contact with various electrode pads and having a uniform length.

[9] Exemplary embodiments of the present invention provide a method of manufacturing the above probe card including the probe tip. Technical Solution

[10] According to one exemplary embodiment, there is provided a probe tip including a pillar-shaped body, a plurality of extension parts symmetrically connected to and downwardly extended from a bottom surface of the body, and a plurality of slanted parts positioned at each end portion of the extension parts in such a manner that each of the slanted parts is upwardly slanted from a central portion to an edge portion of the bottom surface of the body, so that at least a pair of the symmetrical slanted parts is configured to have a V-shape.

[11] In an example embodiment, the extension parts are positioned at opposite peripheral portions of the bottom surface of the body alternately with one another, so that the extension parts are arranged on the bottom surface of the body in a zigzag shape.

[12] In an example embodiment, the extension parts positioned at opposite peripheral portions of the bottom surface of the body in such a manner that at least one pair of the extension parts face each other.

[13] In an example embodiment, the slanted parts make entire contact with the end portions of the extension parts.

[14] In an example embodiment, the slanted parts make partial contact with the end portions of the extension parts. For example, half of the slanted parts may make contact with the end portions of the extension parts.

[15] According to an exemplary embodiment, there is provided a probe card including the probe tip. The probe card may include a printed circuit board (PCB) including at least a penetration hole through which multilayer circuits are electrically connected thereto, an elastic connection member penetrating into the penetration hole and protruding from a bottom portion of the PCB, a probe head connected to the connection member, and a probe tip including a body vertically installed on a bottom portion of the probe head, a plurality of extension parts symmetrically connected to a bottom portion of the body and downwardly extended from the bottom portion of the body, and a plurality of slanted parts positioned at each end portion of the extension parts in such a manner that each of the slanted parts is upwardly slanted from a central portion to an edge portion of the bottom portion of the body, so that at least a pair of the symmetrical slanted parts is configured to be a V-shape.

[16] According to another example embodiment of the present invention, the extension parts of the probe tip of the present example embodiment may sufficiently absorb an external force applied to the probe card, so that the probe tip may easily make contact with a general metal pad as well as a ball-type electrode pad. Further, the probe tip is vertically installed on the probe card with high density, and thus the probe card may be used in an electrical die sorting (EDS) process with respect to a semiconductor device having a fine pitch pattern.

[17] According to still another example embodiment of the present invention, there is provided a method of manufacturing the above probe tip. A plurality of trenches is formed on a sacrificial substrate in a stripe shape in such a manner that an upper portion is larger than a lower portion, and thus a sidewall of each of the trenches is slanted upward from left to right. A plurality of slanted parts is formed on both sidewalls of each of the trenches spaced apart from one another by substantially the same distance. A plurality of openings is formed on a bottom portion of the substrate through which a bottom portion of each of the slanted parts is exposed. A plurality of extension parts is formed in each of the openings, so that the extension parts make contact with the slanted parts. A body is formed to make contact with the extension parts positioned under the adjacent sidewalls of the neighboring trenches. The sacrificial substrate is removed from a resultant structure, to thereby complete the probe tip.

[18] In an example embodiment, the slanted parts in each of the trenches are alternately formed on opposite sidewalls facing each other along the trenches, so that the slanted parts are arranged in a zigzag shape.

[19] In an example embodiment, the slanted parts in each of the trenches are formed at substantially the same position of opposite sidewalls facing each other along the trenches, so that at least one pair of the slanted parts face each other in each of the trenches.

[20] In an example embodiment, the whole bottom portion of each of the slanted parts is exposed through each of the openings.

[21] In an example embodiment, a portion of the bottom portion of each of the slanted parts is exposed through each of the openings. For example, the portion of the bottom portion of each of the slanted parts is adjacent to a bottom portion of each of the trenches.

[22] In an example embodiment, the trenches are formed through the following processing steps: a mask pattern is formed on the sacrificial substrate in a stripe shape, and the substrate is partially etched off by a wet etching process using the mask pattern as an etching mask. Thereafter, the mask pattern is removed from the substrate.

[23] In an example embodiment, the slanted parts are formed through the following processing steps: a seed layer is formed on the substrate including the trenches, and a first photoresist pattern is formed, through which the seed layer is partially exposed on both of the sidewalls of the trenches in such a manner that the exposed portions of the seed layer are spaced apart by substantially the same distance along the trenches. A first preliminary layer is formed on the exposed seed layer by an electroplating process, and the first preliminary layer is planarized in such a manner that a top surface of the metal layer is coplanar with a top surface of the substrate. The first photoresist pattern is removed from the substrate, to thereby expose the seed layer covered with the first photoresist pattern. The exposed seed layer is removed from the substrate.

[24] In an example embodiment, the seed layer is formed through the following processing steps: a first metal layer is formed on the sacrificial substrate, to thereby improve an adhering force between the substrate and the seed layer, and a second metal layer is formed on the first metal layer, the second metal layer functioning as a seed in a formation process for the extension parts.

[25] In an example embodiment, the openings are formed through the following processing steps: a second photoresist pattern is formed on the bottom portion of the substrate in accordance with arrangement of the slanted parts, so that the bottom portion of the substrate is partially exposed through the second photoresist pattern cor- respondently to each of the slanted parts, and the substrate is partially etched off by a dry etching process using the second photoresist pattern as an etching mask until the seed layer is exposed.

[26] In an example embodiment, the extension parts are formed through the following processing steps: the first metal layer is removed from the seed layer exposed through the openings, and a second preliminary layer is formed on the second metal layer exposed through the openings by an electroplating process. The second photoresist pattern is removed from the substrate.

[27] In an example embodiment, the first photoresist pattern is formed through the following processing steps: a lower photoresist film is formed on the seed layer, and an upper photoresist film is formed on the lower photoresist film. Then, the upper and the lower photoresist films are simultaneously exposed to light, and the exposed upper photoresist film and the exposed lower photoresist film are sequentially developed by a development process. For example, the lower photoresist film may be formed by spraying photoresist materials onto the seed layer, and the upper photoresist film may be formed by adhering a film comprising photoresist materials to the lower photoresist film.

[28] In an example embodiment, the body is formed through the following processing step: a seed layer is formed on the bottom portion of the substrate and on the extension parts. A photoresist pattern is formed on the seed layer at the bottom portion of the substrate, so that the seed layers corresponding to the extension parts on the sidewalls adjacent to each other in the neighboring trenches are exposed through the photoresist pattern. A preliminary layer is formed on the seed layer exposed through the photoresist pattern by an electroplating process, so that the body makes contact with the extension parts. The photoresist pattern removed from the bottom portion of the substrate, to thereby expose the seed layer covered with the photoresist pattern. The exposed seed layer is removed from the substrate.

[29] According to further still another example embodiment of the present invention, there is provided a method of manufacturing the probe structure including the probe tip. A plurality of trenches is formed on a sacrificial substrate in a stripe shape in such a manner that an upper portion is larger than a lower portion, and thus a sidewall of each of the trenches is slanted upward from left to right. A plurality of slanted parts is formed on each sidewalls of each of the trenches spaced apart from one another by substantially the same distance. A plurality of openings is formed on a bottom portion of the substrate through which a bottom portion of each of the slanted parts is exposed. A plurality of extension parts is formed in each of the openings, so that the extension parts make contact with each of the slanted parts. A body is formed to make contact with the extension parts positioned under the adjacent sidewalls of the neighboring trenches. A plurality of conductive bumps is formed on a probe head, and the body is bonded to the conductive bumps. Finally, the sacrificial substrate is removed from the resultant structure.

[30] In an example embodiment, the bumps are formed through the following processing steps: a seed layer is formed on a bottom portion of the probe head, a photoresist pattern through which the seed layer is exposed correspondently to a plurality of the bodies; a metal layer is formed on the exposed seed layer by an electroplating process, and the metal layer is planarized in such a manner that a top surface of the metal layer is coplanar with the bottom portion of the probe head. The photoresist pattern is removed from the probe head, to thereby expose the seed layer covered with the photoresist pattern, and the exposed seed layer is also removed from the probe head.

[31] In an example embodiment, the bumps are prepared in advance, and the bumps may be bonded to the bottom portion of the probe head.

[32]

Advantageous Effects [33] According to the present invention, the extension parts of the probe tip of the present example embodiment may sufficiently absorb an external force applied to a probe card, so that the probe tip may easily make contact with a general metal pad as well as a ball-type electrode pad. Further, the probe tip is vertically installed on the probe card with high density, and thus the probe card may be used in an EDS process with respect to a semiconductor device having a fine pitch pattern. Furthermore, slanted parts are used as an etch-stop layer during a manufacturing process for the probe tip. Therefore, each of the extension parts may be formed to have substantially the same length no matter how large the surface of the sacrificial substrate is. In addition, the probe tips may be vertically bonded to the probe card at one time. Brief Description of the Drawings

[34] The above and other features and advantages of the invention will become readily apparent by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein:

[35] FIGS. 1 to 4 are views illustrating a probe tip in accordance with a first example embodiment of the present invention;

[36] FIGS. 5 to 8 are views illustrating a probe tip in accordance with a second example embodiment of the present invention;

[37] FIGS. 9 to 12 are views illustrating a probe tip in accordance with a third example embodiment of the present invention;

[38] FIGS. 13 to 16 are views illustrating a probe tip in accordance with a fourth example embodiment of the present invention;

[39] FIG. 17 is a cross-sectional view illustrating a probe card in accordance with an example embodiment of the present invention;

[40] FIGS. 18 to 31 are cross-sectional views illustrating processing steps for forming the probe tip shown in FIGS. 1 to 4;

[41] FIGS. 32 and 33 are cross-sectional views illustrating processing steps for manufacturing a probe tip structure in accordance with an example embodiment of the present invention;

[42] FIGS. 34 and 35 are cross-sectional views illustrating the process steps for manufacturing the probe tip shown in FIGS. 5 to 8;

[43] FIGS. 36 and 37 are cross-sectional views illustrating the process steps for manufacturing the probe tip shown in FIGS. 9 to 12; and

[44] FIGS. 38 to 41 are cross-sectional views illustrating the process steps for manufacturing the probe tip shown in FIGS. 13 to 16. Best Mode for Carrying Out the Invention

[45] The present invention is described more fully hereinafter with reference to the ac- companying drawings, in which exemplary embodiments of the present invention are shown. The present invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.

[46] It will be understood that when an element or layer is referred to as being "on" or

"connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present. Like reference numerals refer to like elements throughout. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

[47] It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

[48] Spatially relative terms, such as "lower, "upper" and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the example term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[49] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present invention. As used herein, the singular forms "a, "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

[50] Exemplary embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. The regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.

[51] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[52] FIGS. 1 to 4 are views illustrating a probe tip in accordance with a first example embodiment of the present invention. FIG. 1 is a perspective view illustrating the probe tip in accordance with an example embodiment of the present invention, and FIG. 2 is a plan view illustrating the probe tip shown in FIG. 1. FIG. 3 is a side view illustrating the probe tip shown in FIG. 1 and FIG. 4 is a front view illustrating the probe tip shown in FIG. 1.

[53] Referring to FIGS. 1 to 4, a probe tip 100 in accordance with an example embodiment of the present invention includes a plurality of slanted parts 110, a plurality of extension parts 120 and a body 130.

[54] In an example embodiment, the body 130 includes a tetragonal pillar and a probe head (not shown) of a probe card is installed on a first surface of the body 130.

[55] While the present example embodiment discloses that the body 130 includes the tetragonal pillar, any other configuration known to one of the ordinary skill in the art, such as a polygonal pillar or a circular pillar, may also be utilized as the body 130 in place of or in conjunction with the tetragonal pillar.

[56] In an example embodiment, a pair of the extension parts 120 is connected to a second surface opposite to the first surface of the body 130. Each of the extension parts 120 also includes a tetragonal pillar, and a first end portion of each of the extension parts 120 is slanted at a slant angle, and a second end portion opposite to the first end portion is not slanted, so that a normal vector of a cross-sectional surface of the first end portion is slanted at the slant angle with respect to that of a cross-sectional surface of a second end portion opposite to the first end portion. In the present embodiment, the second end portion of each of the extension parts 120 is connected to the second surface of the body 130, so that the normal vector of the second end portion of each of the extension parts 120 is in parallel with a central axis of the body 130. Particularly, each of the extension parts 120 is located at a corner portion of the second surface of the tetragonal pillar body 130 in such a manner that the extension parts 120 face each other in a diagonal direction of the second rectangular/square surface of the body 130. Each of the slanted parts 110 is positioned at the first end portion of each of the extension parts 120, so that a pair of the slanted parts 110 also face each other in the diagonal direction of the rectangular/square surface of the body 130.

[57] While the present example embodiment discloses that each of the extension parts 120 includes the tetragonal pillar, any other configuration known to one of the ordinary skill in the art, such as a triangular pillar or a trapezoidal pillar, may also be utilized in place of or in conjunction with the tetragonal pillar as each of the extension parts 120.

[58] For example, each of the slanted parts 110 includes a tetragonal pattern that is formed into substantially the same shape as the first end portion of each of the extension parts 120, so that each of the slanted parts 110 has substantially the same surface area as the cross-sectional surface of the first end portion of each of the extension parts 120. Each of the slanted parts 110 is jointed to the first end portion of each of the extension parts 120 across a whole cross-sectional surface of the first end portion of each of the extension parts 120, so that each of the whole slanted parts 110 is supported by the first end portion of each of the extension parts 120. In the present embodiment, as shown in FIG. 2, while the first normal vector U₁ of the cross-sectional surface of the first end portion of one of the extension parts 120 has a first slant angle O₁ clockwise with respect to the normal vector of the cross-sectional surface of the second end portion that is a reference normal vector n_ref, the second normal vector n₂of the cross-sectional surface of the first end portion of the other of the extension parts 120 has a second slant angle Q₂ counter-clockwise with respect to the reference normal vector n_ref. Therefore, a pair of the extension parts 120 and a pair of the slanted parts 110 on each of the first end portion of the extension parts 120 are converged into a point, to thereby form a V-shape together with each other. Accordingly, the slanted parts 110 may easily make contact with an electrode pad of a semiconductor device.

[59] The pattern shape of each of the slanted parts 110 may be varied in accordance with the shape of the first end portion of each of the extension parts 120, as would be known to one of the ordinary skill in the art. For example, when each of the extension parts 120 is shaped into a triangular pillar or a trapezoidal pillar, each of the slanted parts 110 may be shaped into a triangular pattern or a trapezoidal pattern.

[60] The slanted parts 110, the extension parts 120 and the body 130 may comprise a metal such as nickel (Ni), cobalt (Co), tungsten (W), a nickel-cobalt (Ni-Co) alloy, etc. These may be used alone or in combinations thereof.

[61] In an example embodiment, when three or more of the extension parts 120 are connected to the second surface of the body 130, the extension parts 120 are alternately arranged at symmetrical edge portions of the second surface of the body 130. Therefore, the slanted parts 110 are also alternately located at the first end portion of the extension parts 120 at symmetrical edge portions of the second surface of the body 130.

[62] When the probe tip 100 makes contact with the electrode pad of a semiconductor device and an external force is applied to the electrode pad by the probe tip 100, a center of force at each of the slanted parts 110 is not coincident to the center of force at each of the extension parts 120, so that the extension parts 120 may be distorted or bent by the external force. The distortion or bending of the extension parts 120 causes the slanted parts 110 to scratch a native oxide layer on a surface of the electrode pad, to thereby improve contact reliability between the slanted parts 110 and the electrode pad. In addition, the slanted parts 110 may generate a scrub mark on the surface of the electrode pad.

[63] Accordingly, the extension parts 120 of the probe tip 100 may absorb an external force applied to the probe card, and the probe tip 100 of the present example embodiment may easily make contact with a general metal pad as well as a ball-type electrode pad. Further, the probe tip 100 may be vertically installed on the probe card with high density, and thus the probe card may be used in an electrical die sorting (EDS) process with respect to a semiconductor device having a fine pitch pattern.

[64] FIGS. 5 to 8 are views illustrating a probe tip in accordance with a second example embodiment of the present invention. FIG. 5 is a perspective view illustrating a probe tip in accordance with an example embodiment of the present invention, and FIG. 6 is a plan view illustrating the probe tip shown in FIG. 5. FIG. 7 is a side view illustrating the probe tip shown in FIG. 5 and FIG. 8 is a front view illustrating the probe tip shown in FIG. 5.

[65] Referring to FIGS. 5 to 8, a probe tip 200 in accordance with an example embodiment of the present invention includes a plurality of slanted parts 210, a plurality of extension parts 220 and a body 230.

[66] The probe tip 200 of the present embodiment has substantially the same structure as the probe tip 100 that is described with reference to FIGS. 1 to 4, except for an arrangement of the extension parts 220 on the second surface of the body 230. Therefore, any further descriptions on the same element will be omitted hereinafter. [67] A pair of the extension parts 220 is connected to the second surface of the body 230 in such a manner that the extension parts 220 face each other at a central portion of symmetrical edge portion of the second surface of the body 230. Like the extension parts 120 as described with reference to FIGS. 1 to 4, while the first normal vector U₁ of the cross-sectional surface of the first end portion of one of the extension parts 220 has a first slant angle O₁ clockwise with respect to the normal vector of the cross-sectional surface of the second end portion that is a reference normal vector n_ref, the second normal vector n₂of the cross-sectional surface of the first end portion of the other of the extension parts 220 has a second slant angle Q₂ counter-clockwise with respect to the reference normal vector n_ref. Therefore, a pair of the extension parts 220 and a pair of the slanted parts 210 on each of the first end portion of the extension parts 220 are converged into a point, to thereby form a V-shape together with each other. Accordingly, the slanted parts 210 may easily make contact with an electrode pad of a semiconductor device.

[68] FIGS. 9 to 12 are views illustrating a probe tip in accordance with a third example embodiment of the present invention. FIG. 9 is a perspective view illustrating a probe tip in accordance with an example embodiment of the present invention, and FIG. 10 is a plan view illustrating the probe tip shown in FIG. 9. FIG. 11 is a side view illustrating the probe tip shown in FIG. 9 and FIG. 12 is a front view illustrating the probe tip shown in FIG. 9.

[69] Referring to FIGS. 9 to 12, a probe tip 300 in accordance with an example embodiment of the present invention includes a plurality of slanted parts 310, a plurality of extension parts 320 and a body 330.

[70] The probe tip 300 of the present embodiment has substantially the same structure as the probe tip 100 that is described with reference to FIGS. 1 to 4, except for a joint portion of the extension parts 320 and the slanted parts 310. Therefore, any further descriptions on the same element will be omitted hereinafter.

[71] Referring to FIGS. 9 to 12, each of the slanted parts 310 has substantially the same width w as the cross-sectional surface of the first end portion of each of the extension parts 320, while having a length I₁ longer than a length I₂ of the cross-sectional surface of the first end portion of each of the extension parts 320. Therefore, each of the slanted parts 310 is jointed to a portion of the first end portion of each of the extension parts 320, so that the extension parts 320 partially support the slanted parts 310. Particularly, the slanted parts 310 are slanted toward each other, and the extension parts 320 are spaced apart from each other by a distance greater than that of the extension parts 120 as described with reference to FIGS. 1 to 4.

[72] FIGS. 13 to 16 are views illustrating a probe tip in accordance with a fourth example embodiment of the present invention. FIG. 13 is a perspective view illustrating a probe tip in accordance with an example embodiment of the present invention, and FIG. 14 is a plan view illustrating the probe tip shown in FIG. 13. FIG. 15 is a side view illustrating the probe tip shown in FIG. 13 and FIG. 16 is a front view illustrating the probe tip shown in FIG. 13.

[73] Referring to FIGS. 13 to 16, a probe tip 400 in accordance with an example embodiment of the present invention includes a plurality of slanted parts 410, a plurality of extension parts 420 and a body 430.

[74] The probe tip 400 of the present embodiment has substantially the same structure as the probe tip 200 that is described with reference to FIGS. 5 to 8, except for a joint portion of the extension parts 420 and the slanted parts 410. Therefore, any further descriptions on the same element will be omitted hereinafter.

[75] Referring to FIGS. 13 to 16, a pair of the extension parts 420 is connected to the second surface of the body 430 in such a manner that the extension parts 420 face each other at a central portion of symmetrical edge portion of the second surface of the body 430. Like the extension parts 120 as described with reference to FIGS. 1 to 4, while the first normal vector ni of the cross-sectional surface of the first end portion of one of the extension parts 420 has a first slant angle O₁ clockwise with respect to the normal vector of the cross-sectional surface of the second end portion that is a reference normal vector n_ref, the second normal vector n₂of the cross-sectional surface of the first end portion of the other of the extension parts 420 has a second slant angle θ₂ counterclockwise with respect to the reference normal vector n_ref. Therefore, a pair of the extension parts 420 and a pair of the slanted parts 410 on each of the first end portion of the extension parts 420 are converged into a point, to thereby form a V-shape together with each other. Accordingly, the slanted parts 410 may easily make contact with an electrode pad of a semiconductor device.

[76] FIG. 17 is a cross-sectional view illustrating a probe card in accordance with an example embodiment of the present invention.

[77] Referring to FIG. 17, a probe card 500 in accordance with an example embodiment of the present invention includes a connection member 510, a printed circuit board (PCB) 520, a probe head 532 and a probe tip 534.

[78] In an example embodiment, the PCB 520 includes a plurality of openings through which inner circuits are electrically connected thereto, and the probe head 532 includes a plurality of the probe tips 534 making direct contact with an inspection object at a lower portion thereof. The PCB 520 and the probe head 532 are electrically connected to each other via the connection member 510. In the present embodiment, the connection member 510 may comprise an elastic material, to thereby control a gap distance between the PCB 520 and the probe head 532. The PCB 520 and the probe head 532 are secured to each other using first, second and third supplementary plates 522, 526 and 528, a leaf spring 530 and various bolts 524, 536 and 538.

[79] The probe tip 534 of the present embodiment is substantially the same structure as the probe tip 100 as described with reference to FIGS. 1 to 4, so that any further descriptions on the probe tip 534 is omitted. The probe tip 534 is vertically installed on a lower surface of the probe head 532, so that the probe tip 534 may be installed on the probe head 532 at high density. As a result, the probe card 500 may be used in an ESD process for a semiconductor device having a pattern of fine pitch.

[80] The probe card 500 of the present embodiment may also include the probe tips that are described with reference to FIGS. 5 to 16 as the probe tip 532, as would be known to one of the ordinary skill in the art.

[81] FIGS. 18 to 31 are cross-sectional views illustrating processing steps for forming the probe tip shown in FIGS. 1 to 4. In FIGS. 18 to 31, the same reference numerals denote the same elements in FIGS. 1 to 4, and thus detailed descriptions of the same elements will be omitted.

[82] Referring to FIGS. 18 and 19, a mask layer is formed on a sacrificial substrate 101 such as a silicon substrate or a glass substrate. The mask layer may include an oxide, a nitride, an oxynitride, etc. A photoresist film is formed on the mask layer and a photolithography process is performed on the photoresist film, to thereby form a first photoresist pattern 103 on the mask layer that defines areas for trenches 104. For example, the first photoresist pattern may be formed into a stripe shape. The mask layer is etched off using the first photoresist pattern as an etching mask, to thereby form a mask pattern 102 on the sacrificial substrate 101. The trenches 104 are formed in the portions of the substrate exposed through the mask pattern 102.

[83] The substrate 101 is partially etched off using the mask pattern as an etching mask, to thereby form the trenches 104 on the sacrificial substrate 101 as a stripe shape. For example, the etching process for forming the trenches 104 may include a wet etching process and a laser etching process. In the present embodiment, the trenches 104 are formed on the substrate 101 by the wet etching process for etching against a silicon substrate. An etchant for the wet etching process may include a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution. These may be used alone or in a mixture thereof. As a result of the wet etching process, a lower portion of each of the trenches 104 is smaller than an upper portion of each of the trenches 104, so that a sidewall of each of the trenches 104 may be inclined upward from left to right. Thereafter, the first photoresist pattern 103 and the mask pattern 102 are consecutively removed from the substrate 101 by an ashing or a stripping process.

[84] In an example embodiment, the first photoresist pattern 103 is removed from the substrate 101 by an ashing or a stripping process, and then the substrate 101 is partially etched off using the mask pattern 102 as an etching mask, to thereby form the trenches 104 as a stripe shape. Thereafter, the mask pattern 102 is removed from the substrate 101 by an ashing process or a stripping process.

[85] Referring to FIGS. 20 and 21, a first seed layer (not shown) is formed on the substrate 101 including the trenches 104, for example, by a sputtering process. Particularly, a first metal layer having good adhesive characteristics is formed on the substrate 101, and a second metal layer is formed on the first metal layer as the first seed layer. The first seed layer is sufficiently adhered to the substrate 101 by the first metal layer. The first metal layer may comprise titanium (Ti) and chromium (Cr), and the second metal layer may comprise copper (Cu) and gold (Au).

[86] A photoresist film is formed on the substrate 101 including the first seed layer, and a photolithography process is performed on the photoresist film. As a result, a second photoresist pattern 107 is formed on the first seed layer, and defines areas of the first seed layer that are to be slanted parts. Particularly, a lower photoresist film is formed on the substrate 101 including the first seed layer by a spray coating process, and then an upper photoresist film is formed on the lower photoresist film by a photoresist film coating process.

[87] The photoresist film may hardly have a uniform thickness on a sidewall of each of the trenches 104 by a conventional spin coating process. In addition, when a spray coating process is used for forming the photoresist film, the photoresist film may not have a sufficient thickness on the sidewall of each of the trenches 104, while having a sufficient thickness on a bottom surface of each of the trenches 104. As a result, the photoresist film may not have a sufficient thickness on the sidewall of each of the trenches 104 by the spin coating process or the spray coating process. Further, when the photoresist film coating process is only used for forming the photoresist film, the photoresist film may not be sufficiently adhered to the bottom portion of each of the trenches 104 due to a thickness of the photoresist film, so that a void is generated between the photoresist film and the bottom portion of each of the trenches 104. In the present embodiment, both of the spray coating process and the photoresist film coating process are simultaneously performed for forming the photoresist film, so that the photoresist film may be formed to a sufficient and uniform thickness on the sidewalls of the trenches 104.

[88] An exposure process is simultaneously performed on the lower and upper photoresist film, and a development process is sequentially performed on the upper photoresist film and the lower photoresist film, to thereby form a lower photoresist pattern 105 and an upper photoresist pattern 106. The second photoresist pattern 107 includes the lower photoresist pattern 105 and the upper photoresist pattern 106. Accordingly, the first seed layer on each sidewall of the trenches 104 is partially exposed through the second photoresist pattern 107. In the present embodiment, the first seed layer on a first sidewall of each of the trenches 104 is exposed through the second photoresist pattern 107 in such a manner that the exposed portions of the first seed layer are spaced apart from one another by an interval in a longitudinal direction of the trench. Further, the first seed layer on a second sidewall of each of the trenches 104 is also exposed through the second photoresist pattern in such a manner that the exposed portions of the first seed layer are spaced apart from one another by substantially the same interval in the longitudinal direction of each of the trenches 104 and the exposed portions of the first and second sidewalls of each of the trenches 104 are alternately arranged on the sidewall of each of the trenches 104. That is, the first seed layer on the sidewalls of each of the trenches 104 is exposed through the second photoresist pattern 107 in a zigzag shape.

[89] For example, as shown in FIG. 20, the exposed first seed layer may extend from an edge portion of the bottom portion of each of the trenches 104 to an upper sidewall of each of the trenches 104, and thus may be approximately shaped into a rectangle. For another example, the exposed first seed layer may narrowly extend from an edge portion of the bottom portion of each of the trenches 104 to an upper sidewall of each of the trenches 104, and thus may be approximately shaped into a triangle or a trapezoid.

[90] Referring to FIGS. 22 and 23, the slanted parts 110 are formed on the first seed layer that is exposed through the second photoresist pattern 107 to a predetermined thickness by an electroplating process. The slanted parts 110 may comprise a metal such as nickel (Ni), cobalt (Co), tungsten (W), a nickel-cobalt (Ni-Co) alloy, etc. In accordance with the shape of the exposed first seed layer, each of the slanted parts 110 may extend from the edge portion of the bottom portion of each of the trenches 104 to the upper sidewall of each of the trenches 104 as a rectangle shape, and each of the slanted parts 110 is alternately arranged in a zigzag shape and is spaced apart from each other by a predetermined distance.

[91] Thereafter, a planarization process may be performed on the substrate 101 including the slanted parts 110 until a top surface of the substrate 101 is exposed. The planarization process may include a chemical mechanical polishing (CMP) process, an etch-back process and a grinding process. As a result of the planarization process, a top surface of each of the slanted parts 110 is coplanar with the top surface of the substrate 101, so that upper portions of the neighboring trenches 104 are formed into a V-shape together with each other. Then, the second photoresist pattern 107 is removed from the first seed layer by an ashing process or a stripping process. In addition, the first seed layer, which is not covered with the slanted parts 110, is also removed from the substrate 101 by a dry or a wet etching process.

[92] Referring to FIGS. 24 and 25, a photoresist film is also formed on a lower surface of the substrate 101, and a photolithography process is performed on the photoresist film, to thereby form a third photoresist pattern 111 through which the lower surface of the substrate 101 is exposed correspondently to the slanted parts 110. A lower portion of the substrate 101 is partially etched off using the third photoresist pattern as an etching mask by a dry etching process until the first seed layer covered with the slanted parts 110 is exposed, to thereby form a plurality of openings 112 penetrating into the substrate 101 from the lower surface thereof . In the above dry etching process, the first seed layer functions as an etch-stop layer, so that each of the openings 112 has substantially the same depth. In the present embodiment, the whole first seed layer is exposed through the openings 112, and the first metal layer under the first seed layer is selectively removed from the substrate 101 by a wet etching and a dry etching process.

[93] Referring to FIGS. 26 and 27, a metal layer is formed on the lower portion of the substrate 101 by an electroplating process to a sufficient thickness to fill up the openings 112. The metal layer may comprise nickel (Ni), cobalt (Co), tungsten (W), a nickel-cobalt (Ni-Co) alloy, etc. Then, the metal layer is partially removed by a planarization process until a top surface of the third photoresist pattern is exposed, so that the metal layer only remains in the openings 112 and the extension parts 120 are formed on the second metal layer of the first seed layer in the openings 112. In the present embodiment, each of the extension parts 120 has substantially the same length, because each of the openings 112 has substantially the same depth.

[94] Thereafter, the third photoresist pattern 111 is removed from the substrate 101 by an ashing process or a stripping process. The planarization process may include a CMP process, an etch-back process and a grinding process.

[95] Referring to FIGS. 28 and 29, a second seed layer is formed on the lower surface of the substrate 101 and on the extension parts 120 by a sputtering process. In the present embodiment, the first seed layer may have substantially the same structure and compositions as the first seed layer.

[96] A photoresist film is formed on the second seed layer, and a photolithography process is performed on the photoresist film, to thereby form a fourth photoresist pattern through which the extension parts 120 in each of the trenches 104 are exposed.

[97] Another metal layer is formed on the lower portion of the substrate 101 including the second seed layer by an electroplating process to a sufficient thickness to fill up spaces of the fourth photoresist pattern 121. The metal layer may comprise nickel (Ni), cobalt (Co), tungsten (W), a nickel-cobalt (Ni-Co) alloy, etc. Then, the metal layer is partially removed by a planarization process until a top surface of the fourth photoresist pattern 121 is exposed, so that the metal layer only remains in the spaces of the fourth photoresist pattern 121 and the body 130 is formed on the second seed layer.

[98] Referring to FIGS. 30 and 31, the fourth photoresist pattern 121 is removed from the substrate 101 by an ashing process or a stripping process, to thereby expose the second seed layer through the spaces between the bodies 130. Then, the second seed layer exposed through the spaces between the bodies 130 is removed from the substrate 101 by a dry etching process or a wet etching process.

[99] Thereafter, the sacrificial substrate 101 is removed from the above structure by a liftoff process or an etching process, to thereby form the probe tip 100 shown in FIGS. 1 to 4. An etchant for the etching process or the lift-off process may include a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution. These may be used alone or in a mixture thereof.

[100] While the present example embodiment discloses that the slanted parts 110, the extension parts 120 and the body 130 are formed through the electroplating process, any other processes or methods known to one of the ordinary skill in the art, such as a deposition process, may also be utilized for the formation of the slanted parts 110, the extension parts 120 and the body 130 in place of or in conjunction with the electroplating process.

[101] Accordingly, each of the probe tips 100 may be installed on the probe head spaced apart by substantially the same distance, because the extension parts 120 of each probe tip 100 have substantially the same length.

[102] FIGS. 32 and 33 are cross-sectional views illustrating processing steps for manufacturing a probe tip structure in accordance with an example embodiment of the present invention.

[103] Referring to FIG. 32, a third seed layer (not shown) is formed on a probe head 140 having a shape of a plate by a sputtering process. The third seed layer has substantially the same structure and composition as the first seed layer.

[104] A photoresist film is formed on the probe head including the third seed layer, and a photolithography process is performed on the photoresist film, to thereby form a fifth photoresist pattern having substantially the same structure as the fourth photoresist pattern 121.

[105] A metal layer is formed on the probe head 140 including the third seed layer by an electroplating process to a sufficient thickness to fill up spaces of the fifth photoresist pattern. The metal layer may comprise nickel (Ni), cobalt (Co), tungsten (W), a nickel- cobalt (Ni-Co) alloy, etc. Then, the metal layer is partially removed by a planarization process until a top surface of the fifth photoresist pattern is exposed, so that the metal layer only remains in the spaces of the fifth photoresist pattern, to thereby form a plurality of bumps 150 on the third seed layer in the spaces of the fifth photoresist pattern.

[106] Then, the fifth photoresist pattern is removed from the probe head 140 by an ashing process or a stripping process, to thereby expose the third seed layer through spaces between the bumps 150. Then, the third seed layer exposed through the spaces between the bumps 150 is removed from the probe head 140 by a dry etching process or a wet etching process.

[107] Then, the body 130 of the probe tip 100 from which the sacrificial substrate is not yet removed is bonded to each of the bumps 150 by a solder. For example, the solder may comprise gold (Au) and tin (Sn).

[108] Otherwise, a plurality of the bumps 150 is formed in advance, and the probe head

140 and a plurality of the bodies 130 are bonded to each other by the bumps 150 using the solder.

[109] Referring to FIG. 33, the sacrificial substrate 101 is removed from the probe tip 100 by an etching process or a lift-off process, to thereby form a probe structure 190. An etchant for the etching process or the lift-off process may include a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution. These may be used alone or in a mixture thereof.

[110] The probe structure 190 may be jointed to the probe head 140 without dissembling the probe tips 100, so that a plurality of the probe tips 100 may be jointed to the probe head 140 at a time. In addition, each of the probe tips 100 may have substantially the same length, and thus the probe structure 190 may have a sufficient flatness.

[I l l] FIGS. 34 and 35 are cross-sectional views illustrating the process steps for manufacturing the probe tip shown in FIGS. 5 to 8.

[112] Referring to FIGS. 34 and 35, the manufacturing processes for the probe tip 200 are substantially the same as the manufacturing processes for the probe tip 100 that are described with reference to FIGS. 18 to 31, except for the process for positioning the slanted parts 210 on the extension parts 220, so that any further descriptions on the same processing steps will be omitted hereinafter.

[113] The first seed layer on a sidewall of each trench 204 is exposed through the second photoresist pattern 207 in such a manner that the first seed layers in neighboring trenches 204 face each other and the first seed layers on sidewalls of the trenches 204 are spaced apart from one another by a predetermined distance. Then, the slanted parts 210 are formed on the first seed layer exposed through the second photoresist pattern 207 by an electroplating process.

[114] FIGS. 36 and 37 are cross-sectional views illustrating the process steps for manufacturing the probe tip shown in FIGS. 9 to 12.

[115] Referring to FIGS. 36 and 37, the manufacturing processes for the probe tip 300 are substantially the same as the manufacturing processes for the probe tip 100 that are described with reference to FIGS. 18 to 31, except for the processing step for forming the extension parts 320 in such a manner that the extension parts 320 make contact with the slanted parts 310 at a smaller area than the contact area of the extension parts 120 and the slanted parts 110, so that any further descriptions on the same process steps will be omitted hereinafter.

[116] A photoresist film is formed on a lower surface of the substrate 301, and a photolithography process is performed on the photoresist film, to thereby form a third photoresist pattern 311 through which the lower surface of the substrate 301 is exposed correspondently to the slanted parts 310. In the present embodiment, the exposed area of the substrate 301 is much smaller than a projection area of the slanted parts 310. A lower portion of the substrate 301 is partially etched off using the third photoresist pattern as an etching mask by a dry etching process until the first seed layer, which is covered with the slanted parts 310, is exposed, to thereby form a plurality of openings 312 penetrating the substrate 301 from the lower surface thereof . In the present embodiment, the first seed layer adjacent to the bottom portion of each of the trenches 304 is only exposed through the openings 312, and then the first metal layer that is positioned under the exposed portion of the first seed layer is selectively removed from the substrate 301 by a wet etching and a dry etching process.

[117] Thereafter, the extension parts 320 are formed on the second metal layer of the first seed layer exposed through the openings 312 by an electroplating process.

[118] FIGS. 38 to 41 are cross-sectional views illustrating the process steps for manufacturing the probe tip shown in FIGS. 13 to 16.

[119] Referring to FIGS. 38 to 41, the manufacturing processes for the probe tip 400 are substantially the same as the manufacturing processes for the probe tip 100 that are described with reference to FIGS. 18 to 31, except for the processing step for forming the extension parts 420 in such a manner that the extension parts 420 make contact with the slanted parts 410 at a smaller area than the contact area of the extension parts 120 and the slanted parts 110 and except for the processing step for positioning the slanted parts 410 on the extension parts 420, so that any further descriptions on the same process steps will be omitted hereinafter.

[120] Referring to FIGS. 38 and 39, the first seed layer on a sidewall of each trench 404 is exposed through the second photoresist pattern 407 in such a manner that the first seed layers in neighboring trenches 404 face each other and the first seed layers on sidewalls of the trenches 404 are spaced apart from one another by a predetermined distance. Then, the slanted parts 410 are formed on the first seed layer exposed through the second photoresist pattern 407 by an electroplating process.

[121] Referring to FIGS. 40 and 41, a photoresist film is formed on a lower surface of the substrate 401, and a photolithography process is performed on the photoresist film, to thereby form a third photoresist pattern 411 through which the lower surface of the substrate 401 is exposed correspondently to the slanted parts 410. In the present embodiment, the exposed area of the substrate 401 is much smaller than a projection area of the slanted parts 410. A lower portion of the substrate 401 is partially etched off using the third photoresist pattern as an etching mask by a dry etching process until the first seed layer covered with the slanted parts 410 is exposed, to thereby form a plurality of openings 412 through the substrate 401 from the lower surface thereof. In the present embodiment, the first seed layer adjacent to the bottom portion of each of the trenches 404 is only exposed through the openings 412, and then the first metal layer that is positioned under the exposed portion of the first seed layer is selectively removed from the substrate 401 by a wet etching and a dry etching process.

[122] Thereafter, the extension parts 420 may be formed on the second metal layer of the first seed layer exposed through the openings 412 by an electroplating process. Industrial Applicability

[123] According to the present invention, the extension parts of the probe tip of the present example embodiment may sufficiently absorb an external force applied to a probe card, so that the probe tip may easily make contact with a general metal pad as well as a ball-type electrode pad. Further, the probe tip is vertically installed on the probe card with high density, and thus the probe card may be used in an EDS process with respect to a semiconductor device having a fine pitch pattern.

[124] In addition, slanted parts are used as an etch-stop layer during a manufacturing process for the probe tip. Therefore, each of the extension parts may be formed to have substantially the same length no matter how large the surface of the sacrificial substrate is. In addition, the probe tips may be bonded to the probe card at one time.

[125] Although this disclosure describes this invention in terms of exemplary embodiments, the invention is not limited to those embodiments. Rather, a person skilled in the art will construe the appended claims broadly, to include other variants and embodiments of the invention, which those skilled in the art may make or use without departing from the scope and range of equivalents of the invention.

Claims

[1] A probe tip comprising: a pillar- shaped body; a plurality of extension parts symmetrically connected to and downwardly extended from a bottom surface of the body; and a plurality of slanted parts positioned at each end portion of the extension parts in such a manner that each of the slanted parts is upwardly slanted from a central portion to an edge portion of the bottom surface of the body, so that at least a pair of the symmetrical slanted parts is configured to have a V-shape.

[2] The probe tip of claim 1, wherein the extension parts are positioned at opposite peripheral portions of the bottom surface of the body alternately with one another, so that the extension parts are arranged on the bottom surface of the body in a zigzag shape.

[3] The probe tip of claim 1, wherein the extension parts positioned at opposite peripheral portions of the bottom surface of the body in such a manner that at least one pair of the extension parts face each other.

[4] The probe tip of claim 1, wherein the slanted part makes entire contact with the end portion of the extension part.

[5] The probe tip of claim 1, wherein the slanted part makes partial contact with the end portion of the extension part.

[6] The probe tip of claim 5, wherein half of the slanted part makes contact with the end portion of the extension part.

[7] A probe card comprising: a printed circuit board (PCB) including at least a penetration hole through which multilayer circuits are electrically connected thereto; an elastic connection member penetrating into the penetration hole and protruding from a bottom portion of the PCB; a probe head connected to the connection member; and a probe tip including a body vertically installed on a bottom portion of the probe head, a plurality of extension parts symmetrically connected to a bottom portion of the body and downwardly extended from the bottom portion of the body, and a plurality of slanted parts positioned at each end portion of the extension parts in such a manner that each of the slanted parts is upwardly slanted from a central portion to an edge portion of the bottom portion of the body, so that at least a pair of the symmetrical slanted parts is configured to be a V-shape.

[8] A method of manufacturing a probe tip, comprising: forming a plurality of trenches shaped into a stripe on a sacrificial substrate in such a manner that an upper portion is larger than a lower portion; forming a plurality of slanted parts on both of the sidewalls of each of the trenches in such a manner that the slanted parts are spaced apart from one another by a substantially same distance in a direction of the stripe-shaped trench; forming a plurality of openings through the substrate, so that a bottom of each slanted part is exposed; forming an extension part in each of the openings, so that the extension parts make contact with the slanted parts, respectively; forming a body making contact with the extension parts positioned under the adjacent sidewalls of the neighboring trenches; and removing the sacrificial substrate.

[9] The method of claim 8, wherein the slanted parts in the trench are alternately formed on opposite sidewalls facing each other along the trench, so that the slanted parts are arranged in a zigzag shape.

[10] The method of claim 8, wherein the slanted parts in the trench are formed at a substantially same position of opposite sidewalls facing each other along the trench, so that at least one pair of the slanted parts face each other in the trench.

[11] The method of claim 8, wherein the bottoms of the slanted parts are entirely exposed through the openings, respectively.

[12] The method of claim 8, wherein the bottoms of the slanted parts are partially exposed through the openings, respectively.

[13] The method of claim 12, wherein the bottoms of the slanted parts are adjacent to bottom portions of the trenches, respectively.

[14] The method of claim 8, wherein forming the trenches includes: forming a mask pattern on the sacrificial substrate in a stripe shape; etching off the substrate by a wet etching process using the mask pattern as an etching mask; and removing the mask pattern from the substrate.

[15] The method of claim 8, wherein forming the slanted parts includes: forming a seed layer on the substrate including the trenches; forming a first photoresist pattern through which the seed layer is partially exposed on both of the sidewalls of the trench in such a manner that the exposed portions of the first seed layer are spaced apart by a substantially same distance along the trench; forming a first preliminary layer on the exposed seed layer by an electroplating process; planarizing the first preliminary layer in such a manner that a top surface of the metal layer is coplanar with a top surface of the substrate; removing the first photoresist pattern from the substrate, to thereby expose the seed layer covered with the first photoresist pattern; and removing the exposed seed layer from the substrate.

[16] The method of claim 15, wherein forming the seed layer includes: forming a first metal layer on the sacrificial substrate, to thereby improve an adhering force between the substrate and the seed layer; and forming a second metal layer on the first metal layer, the second metal layer functioning as a seed in a formation process for the extension parts.

[17] The method of claim 16, wherein forming the openings includes: forming a second photoresist pattern on the bottom portion of the substrate in accordance with arrangement of the slanted parts, so that the bottom portion of the substrate is partially exposed through the second photoresist pattern corres- pondently to each of the slanted parts; and partially etching the substrate using the second photoresist pattern as an etching mask until the seed layer is exposed.

[18] The method of claim 17, wherein forming the extension parts includes: removing the first metal layer from the seed layer exposed through the openings; forming a second preliminary layer on the second metal layer exposed through the openings by an electroplating process; and removing the second photoresist pattern from the substrate.

[19] The method of claim 15, wherein forming the first photoresist pattern includes: forming a lower photoresist film on the seed layer; forming an upper photoresist film on the lower photoresist film; simultaneously exposing the upper and the lower photoresist films to light; developing the exposed upper photoresist film; and developing the exposed lower photoresist film.

[20] The method of claim 19, wherein forming the lower photoresist film includes spraying photoresist materials onto the seed layer, and forming the upper photoresist film includes adhering a film comprising photoresist materials to the lower photoresist film.

[21] The method of claim 8, wherein forming the body includes: forming a seed layer on the bottom portion of the substrate and on the extension parts; forming a photoresist pattern on the seed layer at the bottom portion of the substrate, so that the seed layers corresponding to the extension parts on the sidewalls adjacent to each other in the neighboring trenches are exposed through the photoresist pattern; forming a preliminary layer on the seed layer exposed through the photoresist pattern by an electroplating process, so that the body makes contact with the extension parts; removing the photoresist pattern from the bottom portion of the substrate, to thereby expose the seed layer covered with the photoresist pattern; and removing the exposed seed layer from the substrate. [22] A method of manufacturing a probe structure, comprising: forming a plurality of trenches on a sacrificial substrate in a stripe shape in such a manner that an upper portion is larger than a lower portion; forming a plurality of slanted parts on both sidewalls of each of the trenches, the slanted parts being spaced apart from one another by a substantially same distance; forming a plurality of openings penetrating the substrate from a bottom portion of the substrate, so that a bottom portion of the slanted part is exposed through the opening; forming a plurality of extension parts in each of the openings, so that the extension parts make contact with the slanted parts, respectively; forming a body making contact with the extension parts positioned under the adjacent sidewalls of the neighboring trenches; forming a plurality of conductive bumps on a probe head; bonding the body to the conductive bumps; and removing the sacrificial substrate. [23] The method of claim 22, wherein forming the bumps includes: forming a seed layer on a bottom portion of the probe head; forming photoresist patterns through which the seed layer is exposed corres- pondently to the bodies; forming a metal layer on the exposed seed layer by an electroplating process; planarizing the metal layer in such a manner that a top surface of the metal layer is coplanar with the bottom portion of the probe head; removing the photoresist pattern from the probe head, to thereby expose the seed layer covered with the photoresist pattern; and removing the exposed seed layer from the probe head. [24] The method of claim 22, wherein forming the bumps includes: preparing the bumps; and bonding the bumps to the bottom portion of the probe head.